US20090039350A1 - Display panel and method of manufacturing the same - Google Patents

Display panel and method of manufacturing the same Download PDF

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Publication number
US20090039350A1
US20090039350A1 US12/214,570 US21457008A US2009039350A1 US 20090039350 A1 US20090039350 A1 US 20090039350A1 US 21457008 A US21457008 A US 21457008A US 2009039350 A1 US2009039350 A1 US 2009039350A1
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United States
Prior art keywords
data line
substrate
display panel
based alloy
electrode
Prior art date
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Abandoned
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US12/214,570
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English (en)
Inventor
Min-Seok Oh
Yang-Ho Bae
Pil-Sang Yun
Byeong-Beom Kim
Seung-Ha Choi
Sang-Gab Kim
Chang-Ho Jeong
Shin-Il Choi
Hong-Kee Chin
Yu-gwang Jeong
Dong-ju Yang
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Samsung Display Co Ltd
Original Assignee
Samsung Electronics Co Ltd
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Filing date
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Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Assigned to SAMSUNG ELECTRONICS CO., LTD. reassignment SAMSUNG ELECTRONICS CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: BAE, YANG-HO, CHIN, HONG-KEE, CHOI, SEUNG-HA, CHOI, SHIN-IL, JEONG, CHANG-HO, JEONG, YU-GWANG, KIM, BYEONG-BEOM, KIM, SANG-GAB, OH, MIN-SEOK, YANG, Dong-ju, YUN, PIL-SANG
Publication of US20090039350A1 publication Critical patent/US20090039350A1/en
Priority to US12/981,287 priority Critical patent/US8273612B2/en
Assigned to SAMSUNG DISPLAY CO., LTD. reassignment SAMSUNG DISPLAY CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SAMSUNG ELECTRONICS CO., LTD.
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

Definitions

  • the present disclosure of invention relates to a display panel and a method of manufacturing the same. More particularly, the present disclosure relates to a display panel capable of reducing a manufacturing cost and a method of manufacturing the display panel
  • a display panel includes a display substrate in which a plurality of pixel areas are defined and an opposite substrate facing the display substrate, where the pixel areas are used to display an image.
  • a liquid crystal display (LCD) panel further includes a liquid crystal layer interposed between the pixel area display substrate and the opposite substrate, and pixel electrodes are arranged on the display substrate and one or more common electrodes on the opposite substrate, respectively.
  • signal transmission lines are formed on the display substrate and the opposite substrate.
  • the signal transmission lines become longer.
  • the driving signals are delayed, and/or suffer loss of voltage due to resistance of the elongated signal transmission lines.
  • additional mass production processes are necessary to for example, prevent the less resistant signal transmission lines from being corroded.
  • the present disclosure of invention provides a display panel capable of being mass produced with reduced manufacturing cost.
  • the data line, the source electrode, and the drain electrode include an aluminum alloy containing nickel.
  • the aluminum alloy may further include lanthanum or boron, and the gate line may include a same material as the data line.
  • Each of the data line, the source electrode, and the drain electrode may have a double-layered structure including a conductive layer.
  • the conductive layer includes at least one of molybdenum, titanium, and tantalum.
  • the conductive layer makes contact with a semiconductor pattern arranged under the source electrode and the drain electrode.
  • the display panel may be a liquid crystal display panel including liquid crystals interposed between the first and second substrates.
  • the data line, the source electrode, and the drain electrode may include a conductive layer including at least one of molybdenum, titanium, and tantalum.
  • the semiconductor pattern may be formed under the source and drain electrodes and make contact with the conductive layer.
  • the manufacturing processes for the display panel may be simplified, thereby reducing the manufacturing cost of the liquid crystal display panel.
  • FIG. 1 is a plan view showing an exemplary embodiment of a liquid crystal display panel according to the present invention
  • FIG. 2 is a cross-sectional view taken along a line I-I′ of FIG. 2 ;
  • FIG. 3 is a sectional view showing another exemplary embodiment of a liquid crystal display panel according to the present invention.
  • FIGS. 4 to 10 are process views illustrating a method of manufacturing the liquid crystal display panel of FIG. 1 ;
  • FIG. 11 is a process view illustrating a method of manufacturing the liquid crystal display panel of FIG. 3 .
  • FIG. 12A is an image illustrating an orientation of crystals in aluminum alloy using EBSD.
  • FIG. 12B is an image illustrating an orientation of crystals in aluminum alloy formed on a conductive layer comprising molybdenum using EBSD.
  • first, second, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention.
  • FIG. 1 is a plan view showing an exemplary embodiment of a liquid crystal display panel according to the present disclosure.
  • a liquid crystal display 500 includes a first substrate 100 , a second substrate 300 , and a liquid crystal layer 200 (refer to FIG. 2 ) interposed between the first substrate 100 and the second substrate 300 .
  • the first substrate 100 includes a transparent glass layer.
  • Data lines DL and gate lines GL are arranged on the first substrate 100 to define correspondingly bounded pixel areas.
  • Pixel electrodes PE are arranged in the pixel areas, respectively, and the pixel electrodes PE and a common electrode (not shown in FIG. 1 ) generate an electric field to control arrangements of liquid crystal molecules in the liquid crystal layer.
  • the liquid crystal display panel 500 may adjust an amount of light (e.g., polarized light) passing through the first substrate 100 and advancing toward the second substrate 300 by controlling the arrangements of the liquid crystal molecules, thereby displaying a desired image in the pixel areas.
  • an amount of light e.g., polarized light
  • the liquid crystal display panel 500 controls the light transmittance according to the arrangements of the liquid crystal molecules and the pixel electrodes PE adjusts the arrangements of the liquid crystal molecules, so that areas in which the pixel electrodes PE are arranged may be deemed as the pixel areas.
  • Each of the pixel areas includes a thin film transistor T, and the thin film transistor T is electrically connected to a corresponding one pixel electrode of the pixel electrodes PE.
  • the thin film transistor T serves as a switching device.
  • an activating control signal (Von) applied through a gate line GL When the thin film transistor T is turned on in response to an activating control signal (Von) applied through a gate line GL, a data signal applied through the data line DL is applied to the pixel electrode PE through the turned on thin film transistor T.
  • the thin film transistor T includes a gate electrode 110 (refer to FIG. 2 ) branched from the gate lien GL, a source electrode 160 (refer to FIG. 2 ) branched from the data line DL, and a drain electrode 165 (refer to FIG. 2 ) including a same material as the data line DL.
  • Mo molybdenum
  • FIG. 2 is a cross-sectional view taken along a line I-I′ of FIG. 2 .
  • the common electrode 330 helps to generate the electric field to control the arrangements of the liquid crystal molecules.
  • the black matrix 310 is formed on the second substrate 300 and aligned over the thin film transistor T.
  • Each of the color filters 320 and 325 may include a photoresist material having a specific color pigment incorporated therein to filter prespecified wavelength of white light incident therethrough.
  • the thin film transistor T includes the gate electrode 110 branched from the gate line GL and arranged on the first substrate 100 , an active pattern 130 (a semiconductive layer) overlapped with the gate electrode 110 , a subdivided ohmic contact layer 140 whose subdivisions are respectively overlapped with spaced apart portions of the active pattern 130 , the aforementioned multilayer (AlNi/Mo) source electrode 160 whose lower Mo-containing sub-layer 152 b overlaps with the ohmic contact pattern 140 , and the aforementioned multilayer (AlNi/Mo) drain electrode 165 whose lower Mo-containing sub-layer 152 c overlaps with the ohmic contact pattern 140 , where the drain electrode 165 is spaced apart from the source electrode 160 .
  • a precursor for defining the Mo-containing first and third metal patterns 152 b and 152 c are formed by blanket depositing in a sealed process chamber (not shown) a first metal layer 152 a containing molybdenum on the first substrate 100 to a thickness of about 50 angstroms to about 1000 angstroms.
  • a precursor for defining the AlNi-containing second and fourth metal patterns 155 b and 155 c are formed by blanket deposition in the same sealed process chamber of a second metal layer 155 a containing a corresponding aluminum alloy on the first substrate 100 .
  • the blanket deposited first and second metal layers 152 a , 155 a are thereafter selectively etched to produce the illustrated patterned portions 152 b , 152 c , 155 b , 155 c.
  • the AlNi-containing second and fourth metal patterns 155 b and 155 c are exposed to the etch mechanism (e.g., a dry etch plasma).
  • the exposed second and fourth metal patterns 155 b and 155 c include the aluminum based alloy with Ni, it has a more superior corrosion resistance than that of aluminum with no significant Ni content therein, and surfaces of the second and fourth metal patterns 155 b and 155 c will generally not be corroded as much as if aluminum with no significant Ni content had been used.
  • Ni nickel
  • the data lines DL, the source electrodes 160 , and the drain electrodes 165 formed in accordance with the present disclosure may be prevented from being reacted with ions, to thereby prevent the byproduct compounds from being generated on the surfaces of the data line DL, the source electrode 160 , and the drain electrode 165 .
  • the additional processes such as ashing of residues on the data line DL, the source electrode 160 , and the drain electrode 165 , selective removing of the ion induced byproducts on the data line DL, the source electrode 160 , and the drain electrode 165 may be omitted, therefore simplifying the manufacturing processes for the liquid crystal display panel and reducing the manufacturing cost of the liquid crystal display panel.
  • the AlNi-containing aluminum alloy of the present disclosure may be readily connected electrically and directly to the transparent conductive material of the pixel electrode PE, additional interface metal layers such as those containing molybdenum do not need to be formed on the drain electrode 165 . Therefore, the manufacturing processes may be further simplified and the process time may be further shortened.
  • the Mo-containing first and third metal patterns 152 b and 152 c including molybdenum make contact with the ohmic contact pattern 140 to reduce the contact resistance between the ohmic contact pattern 140 and the AlNi-containing second metal pattern 155 b and between the ohmic contact pattern 140 and the fourth metal pattern 155 c .
  • Mo molybdenum
  • Ta and/or Ti may be used. Consequently, since good ohmic contact is made, currents may be easily moved between the source electrode 160 and the drain electrode 165 through the active pattern 130 that serves as the channel layer of the thin film transistor T.
  • the Mo/Ti/Ta-containing first and third metal patterns 152 b and 152 c prevent aluminum atoms from being diffused from the second and fourth metal patterns 155 b and 155 c to the active pattern 130 and the ohmic contact pattern 140 .
  • the AlNi-containing second and fourth metal patterns 155 b and 155 c may have the aluminum atoms that are more densely grown (more concentrated as a lattice structure) when the second and fourth metal patterns 155 b and 155 c are first formed on (seeded upon) the first and third Mo/Ti/Ta-containing metal patterns 152 b and 152 c than when the second and fourth metal patterns 155 b and 155 c are directly formed on (seeded upon) the amorphous silicon.
  • the Mo/Ti/Ta-containing first and third metal patterns 152 b and 152 c may prevent the diffusion of the aluminum atoms from the second and fourth metal patterns 155 b and 155 c to contaminate the active pattern 130 and the ohmic contact pattern 140 , thereby preventing occurrence of a black dot on the ohmic contact pattern 140 and the active pattern 130 .
  • FIG. 12A is an image illustrating an orientation of crystals in aluminum alloy using EBSD
  • FIG. 12B is an image illustrating an orientation of crystals in aluminum alloy formed on a conductive layer comprising molybdenum using EBSD.
  • the aluminum based alloy when the aluminum based alloy is formed on a conductive layer comprising Mo, crystals having a (111) orientation increases in the aluminum based alloy. Accordingly, the aluminum based alloy comprising the conductive layer has a (111) preferential orientation.
  • the crystals having the (111) orientation are arranged in a more dense lattice structure and the crystals have size that is capable of preventing the diffusion of the aluminum atoms from the aluminum based alloy.
  • the conductive layer comprising Mo may prevent the diffusion of the aluminum atoms from the aluminum based alloy, thereby preventing contamination of the active pattern 130 and the ohmic contact pattern 140 .
  • the second and fourth metal patterns 155 b and 155 c may further include lanthanum or boron.
  • the aluminum based alloy may include about 96% to 99% aluminum and about 3% atomic or less of nickel atoms.
  • the aluminum based alloy may further include about 0.5% atomic or less of lanthanum atoms.
  • the aluminum based alloy may further include about 0.2% atomic or less of boron atoms.
  • Inclusion of more than about 3% atomic of nickel atoms is not desirable because, although Ni helps prevent corrosion, excess amounts of Ni in the Al alloy can interfere with dry etching of the Al alloy.
  • Inclusion of more than about 0.5% atomic of lanthanum atoms or 0.2% atomic of boron atoms is not desirable because, although lanthanum and boron may improve the corrosion resistance of Al alloy, excess amounts of lanthanum or boron may increase contact resistance. So a balance has to be found between the desired amount of corrosion inhibition and the ease with which the AlNi-containing metal can be dry etched.
  • the first and third metal patterns 152 b and 152 c include at least one of molybdenum, titanium and tantalum or an alloy of two or more of said Mo, Ti and Ta.
  • Mo can be easily wet-etched.
  • addition to the Mo in the first and third metal pattern 152 b and 152 c or substitution thereof by one or both titanium and tantalum in lieu of molybdenum generally requires dry etching as opposed to selective wet etching. So choice of the metal or metals used in the first and third metal patterns 152 b and 152 c may depend on what type of selective etch process is most readily and/or economically available.
  • FIG. 3 is a sectional view showing another exemplary embodiment of a liquid crystal display panel according to the present disclosure.
  • the same reference numerals denote the same elements in FIGS. 1 and 2 , and thus the detailed descriptions of the same elements will be omitted.
  • the source electrode 155 d and the drain electrode 155 e include the aluminum based alloy containing nickel.
  • the source electrode 155 d and the drain electrode 155 e may further include lanthanum or boron as described above.
  • a gate insulating layer 120 is formed on the first substrate 100 to cover the gate electrode 110 .
  • the active pattern 130 and the ohmic contact pattern 140 are sequentially formed on the gate insulating layer 120 corresponding to the gate electrode 110 .
  • an active layer (not shown) and an ohmic contact layer (not shown) are sequentially formed on the first substrate 100 , the ohmic contact layer and the active layer are successively etched by using the same photomask through a photolithography process.
  • the first metal layer 152 a is formed on the first substrate 100 using a sputtering method to cover the active pattern 130 and the ohmic contact pattern 140 .
  • the first metal layer 152 a is a metallic material containing molybdenum, or optionally Ti and/or Ta in addition to the Mo or in lieu of the Mo as explained above.
  • an etch-back process is performed to etch a portion of the ohmic contact pattern 140 using the source and drain electrodes 160 and 165 as an etch mask.
  • the source electrode 160 and the drain electrode 165 are formed by dry-etching the first and second metal layers 152 a and 155 a . This is because shapes of the etched portions of the first and second metal layers 152 a and 155 a may be readily controlled when the first and second metal layers 152 a and 155 a are formed by a dry etch process than that when the first and second metal layers 152 a and 155 a are formed by a wet etch process.
  • the first and second metal layers 152 a and 155 a may be prevented from being over-etched, thereby preventing a parasitic capacitor from being formed, which is defined by a portion of the active pattern not covered by the source and drain electrodes 160 and 165 and the pixel electrode PE (shown in FIG. 10 ).
  • the source electrode 160 including the first metal pattern 152 b and the second metal pattern 155 b and the drain electrode 165 including the third metal pattern 152 c and the fourth metal pattern 155 c are formed.
  • the corrosion byproduct compounds may be substantially prevented from being formed on the surfaces of the source and drain electrodes 160 and 165 after the source and drain electrodes 160 and 165 are formed.
  • the first to fourth metal patterns 152 b , 155 b , 152 c , and 155 c have a small reactivity to the ions, so that the process of removing the residue ions on the surfaces of the first to fourth metal patterns 152 b , 155 b , 152 c , and 155 c may be omitted before or after etching the first metal layer 152 a (see, FIG. 6 ) and the second metal layer 155 a (see, FIG. 7 ). Consequently, the manufacturing processes for the liquid crystal display panel may be simplified, thereby reducing the manufacturing cost of the liquid crystal display panel.
  • the liquid crystals 200 are dropped onto the first substrate 100 and the second substrate 300 is combined with the first substrate 100 , and thus the liquid crystal display panel 500 is basically completely manufactured.
  • FIG. 11 is a process view illustrating a method of manufacturing the liquid crystal display panel of FIG. 3 .
  • the same reference numerals denote the same elements in FIG. 3 , and thus the detailed descriptions of the same elements will be omitted.
  • the manufacturing processes that are same as those illustrated in FIGS. 4 to 10 will be omitted.
  • the second metal layer 155 a is formed on the first substrate 100 on which the gate electrode 110 , the active pattern 130 , and the ohmic contact pattern 140 are formed.
  • the second metal layer 155 a may include the AlNi-containing alloy and optionally further including lanthanum or boron.
  • the second metal layer 155 a is formed on the ohmic contact pattern 140 and the gate insulating layer 120 in such a manner that the second metal layer 155 a directly makes contact with the ohmic contact pattern 140 without forming the first metal layer 152 a (refer to FIG. 6 ).
  • the second metal layer 155 a When the second metal layer 155 a is formed, the second metal layer 155 a is patterned to form the source electrode 155 d (refer to FIG. 3 ) and the drain electrode 155 e (refer to FIG. 3 ).
  • the source and drain electrodes according to the present exemplary embodiment have a single-layered structure of the aluminum based alloy.
  • the data line, the source electrode, and the drain electrode include the aluminum based alloy containing sufficient nickel to substantially inhibit corrosion and this AlNi-containing alloy may directly make contact with the pixel electrode and have the small reactivity to the ions, so that the process of removing the residue ions on the surface of the second metal layer may be omitted.
  • the manufacturing processes for the liquid crystal display panel may be simplified, thereby reducing the manufacturing cost of the liquid crystal display panel.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8558382B2 (en) * 2009-07-27 2013-10-15 Kobe Steel, Ltd. Interconnection structure and display device including interconnection structure
US20150070635A1 (en) * 2013-09-09 2015-03-12 Samsung Display Co., Ltd. Liquid crystal display
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US20150070635A1 (en) * 2013-09-09 2015-03-12 Samsung Display Co., Ltd. Liquid crystal display
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