US20080218715A1 - Immersion exposure method of and immersion exposure apparatus for making exposure in a state where the space between the projection lens and substrate to be processed is filled with a liquid - Google Patents

Immersion exposure method of and immersion exposure apparatus for making exposure in a state where the space between the projection lens and substrate to be processed is filled with a liquid Download PDF

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Publication number
US20080218715A1
US20080218715A1 US12/044,439 US4443908A US2008218715A1 US 20080218715 A1 US20080218715 A1 US 20080218715A1 US 4443908 A US4443908 A US 4443908A US 2008218715 A1 US2008218715 A1 US 2008218715A1
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United States
Prior art keywords
exposure
area
immersion
stage
substrate
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Abandoned
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US12/044,439
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English (en)
Inventor
Masayuki Hatano
Shinichi Ito
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Toshiba Corp
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Individual
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Assigned to KABUSHIKI KAISHA TOSHIBA reassignment KABUSHIKI KAISHA TOSHIBA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HATANO, MASAYUKI, ITO, SHINICHI
Publication of US20080218715A1 publication Critical patent/US20080218715A1/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning

Definitions

  • This invention relates to an immersion exposure method of and an immersion exposure apparatus for making exposure in a state where the space between the projection lens and substrate to be processed is filled with a liquid, such as water.
  • an immersion-type scan exposure apparatus (immersion exposure apparatus) which makes exposure in a state where the space between the projection lens and substrate to be processed is filled with a liquid, such as water, has been under development.
  • an immersion exposure method of, while causing a relative movement of an immersion area formed so as to intervene between a substrate to be exposed on an exposure stage and a projection lens to the substrate, exposing an irradiation area of the substrate covered with the immersion area comprising: moving the exposure stage in a first direction and making exposure in a state where a first exposure area of the substrate is held inside the immersion boundary of the immersion area; moving the exposure stage from a movement end position of the exposure stage to a movement start position of a second exposure area adjacent to the first exposure area in a state where the second exposure area is held inside the immersion boundary of the immersion area; and moving the exposure stage in a second direction opposite to the first direction and exposing the second exposure area in a state where the second exposure area is held inside the immersion boundary of the immersion area.
  • an immersion exposure apparatus comprising: an exposure stage which holds a substrate to be exposed; a mask holding mechanism which is configured to hold a photomask; an optical projection system which is configured to project a pattern of the photomask on the substrate and expose the pattern; and an immersion area forming mechanism which is configured to form a liquid immersion area between a projection lens of the optical projection system and the substrate and which forms an immersion area whose diameter is larger than v 2 /a ⁇ IL ⁇ 2CL, if the maximum length in the scanning direction of an exposure area exposed in one scan is CL, the absolute value of the speed of the exposure stage in the scanning exposure is v, the absolute value of the acceleration and deceleration in the scanning direction of the exposure stage during the movement of the exposure stage between the scanning exposure and the next scanning exposure is a, wherein the optical projection system scans and exposes the pattern of the photomask via the immersion area above the substrate at a constant speed, while the exposure stage is being moved with respect to the projection lens.
  • an immersion exposure apparatus comprising: an exposure stage which holds a substrate to be exposed; a mask holding mechanism which is configured to hold a photomask; an optical projection system which is configured to project a pattern of the photomask on the substrate and expose the pattern; and an immersion area forming mechanism which is configured to form a liquid immersion area between a projection lens of the optical projection system and the substrate and which forms an immersion area whose diameter IL is larger than (H+CL) ⁇ 2, if the length in a first direction of each of a first exposure area and a second exposure area is CL and the moving width in the first direction of the exposure stage in moving the exposure stage is H, wherein the optical projection system scans and exposes the pattern of the photomask via the immersion area above the substrate at a constant speed, while the exposure stage is being moved with respect to the projection lens.
  • FIG. 1 is a schematic diagram showing an immersion projection exposure apparatus according to an embodiment of the embodiment
  • FIG. 2 is a plan view to help explain the relationship between an immersion area and an irradiation slit area
  • FIG. 3 is a plan view showing the arrangement of a plurality of exposure areas formed on a substrate to be exposed;
  • FIGS. 4A to 4C show the way the irradiation slit area scans the exposure areas from top down;
  • FIGS. 5A to 5C show the way the irradiation slit area scans the exposure areas from bottom up;
  • FIG. 6 is a plan view to help explain the way the irradiation area moves when a plurality of exposure areas on the substrate are scanned and exposed sequentially in the embodiment;
  • FIG. 7 is an enlarged plan view of a part of FIG. 6 ;
  • FIG. 8 is a plan view to help explain the way the immersion area moves in a non-exposure moving process in the immersion scanning exposure according to the embodiment
  • FIG. 9 is a plan view to help explain the way the immersion area moves in a second exposure moving process in the immersion scanning exposure according to the embodiment.
  • FIG. 10 is a plan view to help explain the way the immersion area moves in a non-exposure moving process in a conventional immersion scanning exposure.
  • FIG. 11 is a plan view to help explain the way the immersion area moves in a second exposure moving process in the conventional immersion scanning exposure.
  • FIG. 1 shows an immersion projection exposure apparatus 10 according to an embodiment of the invention.
  • the immersion projection exposure apparatus 10 comprises an exposure stage 11 , a projection lens 14 , a water supply and recovery mechanism (immersion area forming mechanism) 17 , a mask stage (mask holding mechanism) 18 , and a lighting system 19 .
  • the lighting system 19 and projection lens 14 constitute an optical projection system.
  • a substrate to be exposed 12 is put on and fixed to the exposure stage 11 .
  • the substrate 12 moves as the exposure stage 11 moves horizontally.
  • a photomask 16 in which a design pattern, such as a semiconductor element pattern, has been formed is placed on the mask stage 18 .
  • the photomask 16 also moves accordingly.
  • the lighting system 19 irradiates the photomask 16 with exposure light.
  • the space between the substrate 12 and projection lens 14 is filled with the water in the immersion area 15 .
  • the exposure light projected from the projection lens 14 passes through the water layer in the immersion area 15 and reaches the irradiation slit area 23 (irradiation area) shown in FIG. 2 .
  • FIG. 2 is a diagram obtained when the relationship between the immersion area 125 and irradiation slit area 23 is viewed from above.
  • the irradiation slit area 23 is a slit-like area which is located in the center of the immersion area 15 and is actually irradiated with the exposure light.
  • the shape of the irradiation slit area 23 is determined by the slit made in the lighting system 19 .
  • the image of the mask pattern on the photomask 16 is projected on a photoresist (not shown) at the surface of the substrate 12 corresponding to the irradiation slit area 23 , thereby forming a latent image in the photoresist.
  • the water supply and recovery mechanism 17 for supplying and recovering water to and from the immersion area 15 between the substrate 12 and projection lens 14 .
  • the water is supplied and discharged in synchronization with scanning exposure.
  • FIG. 3 shows the arrangement of a plurality of exposure areas formed on the substrate 12 .
  • the mask pattern drawn on a single mask is projected on a rectangular exposure area on the substrate 12 by the scanning exposure.
  • the exposure stage 11 and substrate 12 are moved in one direction with respect to the projection lens 14 , thereby causing the irradiation slit area 23 to scan the exposure area 22 from the top to bottom of the sheet as shown in, for example, FIGS. 4A to 4C .
  • the photomask 16 is also moved horizontally with respect to the direction in which the substrate 12 moves, while being irradiated with the exposure light.
  • the moving direction of the substrate is generally opposite to that of the photomask.
  • the exposure stage 11 is moved in the direction opposite to the aforementioned direction with respect to the projection lens 14 , which causes the irradiation slit area 23 to scan the exposure area 22 from the bottom to top of the sheet as shown in FIGS. 5A to 5C .
  • FIGS. 6 and 7 show the way the irradiation region moves when a plurality of exposure areas on the substrate to be exposed 12 are scanned and exposed sequentially.
  • FIG. 7 is an enlarged view of a part of FIG. 6 .
  • a first exposure area 61 of FIG. 7 is scanned and exposed.
  • the exposure stage 11 is moved in one direction (first direction), which causes the irradiation slit area 23 starting to scan from the upper end of the first exposure area 61 to reach the lower end of the first exposure area 61 (first exposure moving process).
  • the exposure stage 11 is further moved in such a manner that its moving direction is changed from the position of the exposure stage 11 when the irradiation slit area 23 reached the lower end of the first exposure area 61 to the position of the exposure stage 11 when the irradiation slit area 23 reaches the lower end of a second exposure area 62 (non-exposure moving process).
  • the first exposure area 61 is adjacent to the second exposure area 62 in a direction perpendicular to the scanning direction (first direction) in the first exposure moving process.
  • the second exposure area 62 is exposed, while the exposure stage 11 is being moved horizontally in the opposite direction (second direction) to that when the first exposure area 61 was exposed (second exposure moving process).
  • the exposure stage is moved to the next upper row and makes exposure repeatedly as described above. Finally, all of the exposure areas of the substrate 12 have been scanned and exposed.
  • the immersion area 15 in contact with the projection lens 14 moves relative to the substrate to be exposed 12 .
  • FIG. 8 shows the way the immersion area 15 moves in the non-exposure moving process in the embodiment. Since the microbubbles have a life time, if microbubbles develop in a certain exposure area immediately before exposure, this causes the problem of degrading the image forming performance of the exposure area.
  • the immersion boundary 151 does not pass over the exposure area 62 , the next exposure area, in the non-exposure moving process between the first and second exposure moving processes. That is, in the non-exposure moving process, the second exposed area 62 is held inside the immersion boundary 151 .
  • FIG. 9 which shows the way the immersion area 15 moves in the second exposure moving process in the embodiment, since bubbles 91 do not exist in the second exposure area 62 when the second exposure area 62 is exposed, the image forming performance of the second exposure area 62 is not degraded.
  • the immersion boundary 151 passes over the second exposure area 62 in the non-exposure moving process as shown in FIG. 10 . Accordingly, as shown in FIG. 11 , the irradiation slit area 23 scans and exposes the second exposure area 62 before the life time of the bubbles 92 occurred in the immersion area 15 on the second exposure area 61 has elapsed, which causes a problem; the existence of the bubbles 91 degrades the image forming performance of the second exposure area 62 .
  • microbubbles are prevented from occurring in the immersion liquid in the exposure area immediately before exposure, thereby making it possible to avoid the above problem.
  • the second exposure area 62 is held inside the immersion boundary 151 .
  • the deterioration of the image forming performance of the second exposure area 62 can be avoided more reliably by holding the second exposure area 62 inside the immersion boundary 151 by preventing the immersion boundary 151 from passing over the second exposure area 62 even in the first exposure moving process, the preceding process.
  • the diameter of the immersion area be IL [mm]
  • the length of each of the first exposure area 61 and second exposure area 62 in the direction in which scanning and exposure are performed (first direction or second direction) be CL [mm]
  • the moving width of the irradiation slit area 23 in the scanning direction in the non-exposure moving process, or the moving width of the exposure stage 11 in the scanning direction be H [mm].
  • the condition for the second exposure area 62 to be held inside the immersion boundary 151 is that CL+H is smaller than the radius IL/2 of the immersion area.
  • the diameter IL [mm] of the immersion area is given, the length CL [mm] of each of the first exposure area 61 and second exposure area 62 in the scanning direction and the moving width H [mm] of the exposure stage 11 in the scanning direction in the non-exposure moving process are set so as to meet the following expression;
  • the diameter IL of the immersion area 15 is set so as to be larger than (H+CL) ⁇ 2.
  • the exposure stage 11 moves at a constant speed of v [mm/sec] in the scanning direction (first direction) in the first exposure moving process and at a constant speed of ⁇ v [mm/sec] in the opposite direction in the second exposure moving process.
  • the absolute value of the speed of the exposure stage 11 in the first exposure moving process and that in the second exposure moving process are both v.
  • the exposure stage 11 moves at a constant acceleration in the first direction whose absolute value is a [mm/sec 2 ] when the moving speed v in the first direction changes to the moving speed ⁇ v in the second direction in the transition from the first-half movement 81 to the second-half movement 82 .
  • the moving width H of the exposure stage 11 in the scanning direction (first direction or second direction) in the non-exposure moving process is expressed as:
  • the constant moving speed v [mm/sec] and the absolute value a [mm/sec 2 ] of each of the acceleration and deceleration are determined so as to satisfy Expression 3. Since these parameters are the setting parameters for an immersion scanning exposure apparatus, the user can set them so as to satisfy Expression 3.
  • the exposure stage 11 moves at a constant speed whose absolute value is v [mm/sec] in a direction in the first exposure moving process and in the opposite direction in the second exposed moving direction and that the exposure stage 11 moves at a constant acceleration or deceleration whose absolute value is a [mm/sec 2 ] in the non-exposure moving process.
  • CL maximum length of the (first and second) exposure areas exposed in one scanning exposure
  • the second exposure area 62 can be held inside the immersion boundary 151 , provided that the immersion area forming mechanism, such as the water supply and recovery mechanism 17 of the immersion exposure apparatus can control the diameter IL [mm] of the immersion area 15 in such a manner that an immersion area whose diameter IL is larger than V 2 /a+2CL can be formed, or the following condition is met:
  • the deterioration of the image forming performance of the second exposure area 62 can be avoided more reliably by holding the second exposure area 62 inside the immersion boundary 151 in the first exposure moving process in the preceding process in addition to the above condition for the second exposure area 62 to be held inside the immersion boundary 151 in the non-exposure moving process.
  • an immersion exposure method and an immersion exposure apparatus which are capable of avoiding the deterioration of the image forming performance in immersion exposure can be provided.
US12/044,439 2007-03-09 2008-03-07 Immersion exposure method of and immersion exposure apparatus for making exposure in a state where the space between the projection lens and substrate to be processed is filled with a liquid Abandoned US20080218715A1 (en)

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JP2007-060668 2007-03-09
JP2007060668A JP2008227007A (ja) 2007-03-09 2007-03-09 液浸露光方法及び液浸露光装置

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080311529A1 (en) * 2007-06-18 2008-12-18 Takehiro Kondoh Immersion multiple-exposure method and immersion exposure system for separately performing multiple exposure of micropatterns and non-micropatterns
CN104866712A (zh) * 2015-05-11 2015-08-26 昆明理工大学 一种新的投影浸入边界法的速度校正方法
US20230013155A1 (en) * 2021-07-13 2023-01-19 Canon Kabushiki Kaisha Exposure apparatus and method of manufacturing article

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JP5994333B2 (ja) * 2012-03-29 2016-09-21 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US9568828B2 (en) * 2012-10-12 2017-02-14 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium

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US20010015795A1 (en) * 2000-01-31 2001-08-23 Nikon Corporation Exposure method, exposure apparatus, method for producing exposure apparatus, and method for producing device
US6576919B1 (en) * 1997-02-28 2003-06-10 Nikon Corporation Method of determining movement sequence and apparatus for realizing it
US20050007569A1 (en) * 2003-05-13 2005-01-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060082747A1 (en) * 2004-10-15 2006-04-20 Kazuya Fukuhara Exposure method, exposure tool and method of manufacturing a semiconductor device
US20070109512A1 (en) * 2005-11-16 2007-05-17 Asml Netherlands B.V. Lithographic apparatus
US20070188733A1 (en) * 2006-01-20 2007-08-16 Shinichi Ito Manufacturing method of semiconductor device

Patent Citations (6)

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Publication number Priority date Publication date Assignee Title
US6576919B1 (en) * 1997-02-28 2003-06-10 Nikon Corporation Method of determining movement sequence and apparatus for realizing it
US20010015795A1 (en) * 2000-01-31 2001-08-23 Nikon Corporation Exposure method, exposure apparatus, method for producing exposure apparatus, and method for producing device
US20050007569A1 (en) * 2003-05-13 2005-01-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060082747A1 (en) * 2004-10-15 2006-04-20 Kazuya Fukuhara Exposure method, exposure tool and method of manufacturing a semiconductor device
US20070109512A1 (en) * 2005-11-16 2007-05-17 Asml Netherlands B.V. Lithographic apparatus
US20070188733A1 (en) * 2006-01-20 2007-08-16 Shinichi Ito Manufacturing method of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080311529A1 (en) * 2007-06-18 2008-12-18 Takehiro Kondoh Immersion multiple-exposure method and immersion exposure system for separately performing multiple exposure of micropatterns and non-micropatterns
US8148054B2 (en) * 2007-06-18 2012-04-03 Kabushiki Kaisha Toshiba Immersion multiple-exposure method and immersion exposure system for separately performing multiple exposure of micropatterns and non-micropatterns
CN104866712A (zh) * 2015-05-11 2015-08-26 昆明理工大学 一种新的投影浸入边界法的速度校正方法
US20230013155A1 (en) * 2021-07-13 2023-01-19 Canon Kabushiki Kaisha Exposure apparatus and method of manufacturing article
US11762299B2 (en) * 2021-07-13 2023-09-19 Canon Kabushiki Kaisha Exposure apparatus and method of manufacturing article

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