US20080207091A1 - Slurry Composition For Color Filter Polishing - Google Patents
Slurry Composition For Color Filter Polishing Download PDFInfo
- Publication number
- US20080207091A1 US20080207091A1 US11/915,733 US91573306A US2008207091A1 US 20080207091 A1 US20080207091 A1 US 20080207091A1 US 91573306 A US91573306 A US 91573306A US 2008207091 A1 US2008207091 A1 US 2008207091A1
- Authority
- US
- United States
- Prior art keywords
- composition
- polishing
- abrasive
- slurry composition
- color filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 111
- 239000000203 mixture Substances 0.000 title claims abstract description 105
- 239000002002 slurry Substances 0.000 title claims abstract description 93
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 49
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000007853 buffer solution Substances 0.000 claims abstract description 23
- 239000000654 additive Substances 0.000 claims abstract description 18
- 230000000996 additive effect Effects 0.000 claims abstract description 17
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 12
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 12
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 12
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims abstract description 11
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 10
- 229960004643 cupric oxide Drugs 0.000 claims abstract description 6
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 6
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000011787 zinc oxide Substances 0.000 claims abstract description 6
- 150000007524 organic acids Chemical class 0.000 claims description 21
- 239000002245 particle Substances 0.000 claims description 21
- 235000005985 organic acids Nutrition 0.000 claims description 19
- 239000004094 surface-active agent Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 13
- 239000011164 primary particle Substances 0.000 claims description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 238000009826 distribution Methods 0.000 claims description 8
- 239000011163 secondary particle Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 6
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 6
- 239000002202 Polyethylene glycol Substances 0.000 claims description 6
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 6
- 229920001223 polyethylene glycol Polymers 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 6
- -1 N,N′-methylene Chemical group 0.000 claims description 5
- 125000001931 aliphatic group Chemical class 0.000 claims description 5
- FQPSGWSUVKBHSU-UHFFFAOYSA-N methacrylamide Chemical compound CC(=C)C(N)=O FQPSGWSUVKBHSU-UHFFFAOYSA-N 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 claims description 5
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 4
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 3
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 claims description 3
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 claims description 3
- 235000011054 acetic acid Nutrition 0.000 claims description 3
- 150000001447 alkali salts Chemical class 0.000 claims description 3
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 3
- 150000003863 ammonium salts Chemical class 0.000 claims description 3
- 229930188620 butyrolactone Natural products 0.000 claims description 3
- 150000001735 carboxylic acids Chemical class 0.000 claims description 3
- 235000015165 citric acid Nutrition 0.000 claims description 3
- STVZJERGLQHEKB-UHFFFAOYSA-N ethylene glycol dimethacrylate Chemical compound CC(=C)C(=O)OCCOC(=O)C(C)=C STVZJERGLQHEKB-UHFFFAOYSA-N 0.000 claims description 3
- 235000019253 formic acid Nutrition 0.000 claims description 3
- 150000007529 inorganic bases Chemical class 0.000 claims description 3
- 239000001630 malic acid Substances 0.000 claims description 3
- 235000011090 malic acid Nutrition 0.000 claims description 3
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims description 3
- 150000007522 mineralic acids Chemical class 0.000 claims description 3
- 235000019260 propionic acid Nutrition 0.000 claims description 3
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 3
- 239000001384 succinic acid Substances 0.000 claims description 3
- 235000011044 succinic acid Nutrition 0.000 claims description 3
- 230000002902 bimodal effect Effects 0.000 claims description 2
- 239000007800 oxidant agent Substances 0.000 claims 1
- 230000000087 stabilizing effect Effects 0.000 abstract 1
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 33
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 26
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 26
- 229920002120 photoresistant polymer Polymers 0.000 description 19
- 239000010410 layer Substances 0.000 description 14
- 229910000027 potassium carbonate Inorganic materials 0.000 description 13
- 239000004323 potassium nitrate Substances 0.000 description 13
- 235000010333 potassium nitrate Nutrition 0.000 description 13
- 239000011159 matrix material Substances 0.000 description 10
- 239000000975 dye Substances 0.000 description 8
- 239000003086 colorant Substances 0.000 description 7
- 239000006185 dispersion Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000003082 abrasive agent Substances 0.000 description 4
- 229910021485 fumed silica Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 239000008119 colloidal silica Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000006174 pH buffer Substances 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- RICKKZXCGCSLIU-UHFFFAOYSA-N 2-[2-[carboxymethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]ethyl-[[3-hydroxy-5-(hydroxymethyl)-2-methylpyridin-4-yl]methyl]amino]acetic acid Chemical compound CC1=NC=C(CO)C(CN(CCN(CC(O)=O)CC=2C(=C(C)N=CC=2CO)O)CC(O)=O)=C1O RICKKZXCGCSLIU-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- MXRIRQGCELJRSN-UHFFFAOYSA-N O.O.O.[Al] Chemical compound O.O.O.[Al] MXRIRQGCELJRSN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000012736 aqueous medium Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000000987 azo dye Substances 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 150000002391 heterocyclic compounds Chemical class 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000007447 staining method Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/008—Polymeric surface-active agents
Definitions
- the present invention relates to a polishing slurry. More particularly, the present invention relates to a slurry composition for color filter polishing.
- the thinner and lighter flat panel display devices not only provide excellent image quality, but also provide advantages such as excellent mobility, durability and energy saving.
- These flat panel display products include liquid crystal display (LCD), organic electro-luminescence display (OEL or OLED), polymer light emitting diode (PLED or LEP), field emission display (FED), and plasma display panel (PDP).
- the LCD device employs the color filter to present color image.
- the color filter affects the image properties, such as contrast, luminance and surface reflection of the display panels.
- the color filter is a layer of color photoresist consisting of three colors i.e., red, green and blue arranged in a highly ordered pattern.
- the driver IC to provide the grey-scale light controls the backlight source, and the grey-scale light passes through the color filter to present red, green or blue light.
- the red, green or blue lights are further combined to form color images.
- Color filter is one of the major components for the TFT-LCD panel display. It is critical to improve the quality of color filter for image quality, throughput and cost considerations.
- FIG. 1 schematically shows the structure of prior art color filter.
- the structure of the color filter is composed of a glass substrate 100 , a black matrix 102 , a color layer 104 a - 104 c , an over-coat layer 106 and an ITO conductive film 108 .
- the thickness of the glass substrate 100 is being reduced to about 0.63 mm or 0.55 mm for reducing the weight of large LCD panel.
- the black matrix 102 is used to isolate the three-color photoresist layers 104 a - 104 c and is essential for enhancing the color contrast. In general, the black matrix 102 requires low reflection for better color performance.
- the material of the black matrix 102 can be chromium or resin.
- Color filters can be produced by dye dispersion method, staining method, printing method or electrical coloring method.
- the dye dispersion method can provide excellent reliability, resolution and high-temperature resistance, and is thus widely used in the industry.
- the color photoresist ink used in the dye dispersion method includes dye, dispersant, additive, coupling resin, reactive dilution agent as well as photoactive starting agent and solvent.
- the color photoresist ink for coloring the three true colors (red, green and blue) is generally base-developed negative photoresist.
- the main components of the color photoresist ink are dye compounds, including azo dye compounds phthalocyanine organic pigments and various heterocyclic compounds. Depending on the product function or the process consideration, various mixtures can be used.
- the dye dispersion method of producing color filter includes formation of black matrix, RGB and ITO layers.
- black matrix a low-reflective double-layered film of chromium oxide/chromium is sputtered over the glass substrate covered with a silicon oxynitride protective layer.
- the low-reflective film of chromium oxide/chromium is also called the metal black layer.
- a positive photoresist layer is spin-coated on the metal black layer. Using the mask with the pattern of black matrix, the photoresist layer is exposed to UV light and developed, and the metal black layer is etched to obtain the pattern of black matrix.
- the RGB process is followed.
- the red, green and blue color photoresists are deposited to designated positions to form the RGB pattern.
- the red (R) color photoresist is spin-coated and exposed to UV light ( ⁇ 248 nm) by using the mask with the R pattern. After exposure, a developing agent is used to remove the un-exposed portion to form the R pattern. Afterwards, post-baking over 200° C. is performed to make the R pattern more resistant.
- the green (G) pattern and the blue (B) pattern are formed. Subsequently the ITO transparent electrode layer is deposited on the top of RGB layer, thus completing the manufacture of color filters.
- the surface of color filter needs to be planarized, using a chemical mechanical polishing (CMP) method.
- CMP chemical mechanical polishing
- the black matrix (BM) is present between each pattern for isolation.
- the peak heights of the R, G, and B patterns after polishing i.e. R1, R2, B1, B2, G1, G2
- R1, R2, B1, B2, G1, G2 are required to below 5000 angstroms
- the height differences of the bottom positions of the patterns after polishing are required to be less than 500 angstroms.
- CMP slurry may result in undesired property alteration of the dyes of the color photoresists during and after the CMP operation.
- the present invention provides a slurry composition for color filter polishing.
- the slurry composition reduces interactions between the slurry and the color filter materials including resin, dye and dispersant, so that the reliability and service life of color filter can be ensured.
- the manufacture stability for color filter production can be improved, and thus increasing the production throughput.
- the present invention provides a slurry composition for polishing color filter comprising at least an abrasive, a buffer solution and an additive.
- the abrasive is selected from the group consisting of alumina, ceria, magnesia, silica, titania, zirconia, cupric oxide, ferric oxide, zinc oxide and the mixtures thereof.
- the abrasive can be provided in calcined, colloidal or fumed forms.
- the slurry composition has a primary particle size smaller than 1.0 micron, mostly 10 nm to 1.0 micron, and preferably 40 nm to 200 nm.
- the primary particle size distribution of the abrasive particles is mono-distribution.
- abrasives of two different primary particle sizes can be mixed in the slurry composition, meaning that the primary particle size distribution can be a bimodal distribution.
- the abrasive particles of the slurry composition have secondary particle sizes ranging from 100 nm to 10 microns, preferably 200 nm to 800 nm.
- the content of the abrasive in the slurry composition ranges from about 1 wt % to 45 wt %, preferably 2 wt % to 25 wt %.
- the specific surface area of the abrasive in the slurry composition ranges from about 5-400 m 2 /g, preferably 20-200 m 2 /g, for minimizing the formation of scratches, dents or other defects during polishing.
- the buffer solution is used for adjusting the pH values and also acts as the pH buffer.
- the buffer solution can be selected from the group consisting of inorganic acids, organic acids, inorganic bases, the mixtures thereof and the salts thereof.
- the content of the buffer solution in the slurry composition ranges from 2 wt % to 15 wt %.
- the choice of the buffer solution depends on the abrasive used in the slurry composition.
- the organic acids used as the buffer solution can be selected from the group consisting of glycin, formic acid, acetic acid, propionic acid, malic acid, citric acid, succinic acid and the mixtures thereof. If the organic acid is selected for the buffer solution, organic or inorganic salts containing sodium, potassium, calcium or iron can be further added.
- the additive used for the slurry composition may include one or more surfactants.
- the surfactant can adjust the zeta potential for improving dispersion or particle suspension at a specific pH, and thus stabilize the slurry composition.
- the surfactant can be selected from the group consisting of polycarboxylic acids; alkali salts of polycarboxylic acids, and ammonium salts of polycarboxylic acids, aliphatic polymers and the mixtures thereof.
- the content of the surfactant in the slurry composition ranges from about 0.3 wt % to 1.0 wt %.
- the additive can be selected from the group consisting of N-methyl pyrrolidone, methacrylamide, butyrolactone, N-vinyl pyrrolidone and the mixtures thereof.
- the additive can be selected from the group consisting of methacrylamide, N, N′-methylene bisacrylamine, polyethylene glycol dimethacrylate, methoxy polyethylene glycol monomethacrylate and the mixtures thereof.
- the additive can not only increase polishing rate, but also improve polishing quality.
- the slurry composition of this invention is suitable for polishing color filter, and the slurry compositions of this invention provide higher polishing rates than the conventional polishing slurry.
- the abrasive added to the slurry composition of this invention is able to remove color photoresist mildly during polishing, and thus avoid overpolishing and increase pattern reliability of color filter.
- the polished color filter layer has precise topography control and thus excellent color image property can be achieved.
- FIG. 1 schematically shows the structure of prior art color filter.
- FIG. 2 schematically shows the structure of prior art color filter.
- FIG. 3 is the SEM photograph of the unpolished color filter sample.
- FIG. 4 is the SEM photograph of the color filter sample polished by the polishing slurry of this invention.
- FIG. 5 is the SEM photograph of the color filter sample polished by the commercially available alumina polishing slurry.
- the slurry composition of the present invention for polishing color filter refers to chemical agents for assisting the polishing of color filter.
- the slurry composition of the present invention can be used alone, or in combination with other polishing slurries for polishing color filter.
- the present invention provides a slurry composition for polishing color filter comprising one or more abrasives.
- the abrasive is selected from the group consisting of alumina, ceria, magnesia, silica, titania, zirconia, cupric oxide, ferric oxide, zinc oxide and the mixtures thereof.
- the abrasive can be provided in colloidal or fumed forms.
- the content of the abrasive in the slurry composition ranges from about 1 wt % to 45 wt %, preferably 2 wt % to 25 wt %.
- the abrasive is preferably of high purity. “High purity” means that the total impurity (such as the impurity in raw materials or from the treatments) content of the source is less than 100 ppm. The purpose is to reduce potential contamination from the slurry composition toward the color filter materials.
- the abrasive is preferably mixed with hydrophilic or aqueous media (such as de-ionized water) to prepare aqueous solution by using a high-shear dispersion technique.
- hydrophilic or aqueous media such as de-ionized water
- the abrasive can be added slowly to the suitable medium to form a colloidal solution.
- the colloidal solution is mixed under a high-shear condition and becomes stable by adjusting the pH of colloidal solution.
- the slurry composition of this invention includes at least a stabilizer.
- the stabilizer can stabilize the surface charge of the abrasive particles in the slurry under acidic condition, inhibit the formation of large particle aggregates, and thus extend long-term stability of the slurry composition.
- the slurry composition of this invention includes at least a buffer solution for adjusting the pH value and serving as the pH buffer.
- the buffer solution can be selected from the group consisting of inorganic acids, organic acids, inorganic bases, the mixtures thereof and the salts thereof. The choice of the buffer solution depends on the abrasive used in the slurry composition.
- the organic acids used as the buffer solution can be selected from the group consisting of glycine, formic acid, acetic acid, propionic acid, malic acid, citric acid, succinic acid and the mixtures thereof. If the organic acid is selected for the buffer solution, organic or inorganic salts containing sodium, potassium, calcium or iron can be further added.
- the content of the buffer solution in the slurry composition ranges from 2 wt % to 15 wt %.
- the pH of the slurry composition is preferably adjusted to a range between 5 and 7 using the buffer solution.
- the additive used for the slurry composition may include one or more surfactants.
- the surfactant can be selected from the group consisting of alkali salts or ammonium salts of poly carboxylic acids, aliphatic polymers and the mixtures thereof.
- the content of the surfactant in the slurry composition ranges from about 0.3 wt % to 1.0 wt %.
- the molecular weight of the aliphatic polymer is between 1000 and 5000 Dalton, for example.
- the additive used for the slurry composition can also be selected from the group consisting of N-methyl pyrrolidone, methacrylamide, butyrolactone, N-vinyl pyrrolidone and the mixtures thereof.
- the additive can be selected from the group consisting of methacrylamide, N,N′-methylene bisacrylamine, polyethylene glycol dimethacrylate, methoxy polyethylene glycol monomethacrylate and the mixtures thereof.
- the slurry composition of this invention or the composition containing the slurry composition of this invention can be provided to the polishing pad of the polishing platform.
- the color filter is polished due to the relative motion between the polishing pad and the color filter substrate. Between the surface of the polishing pad and the color filter substrate, the polishing slurry is continuously provided during polishing.
- the slurry composition of this invention employs one or more specific abrasives that have no chemical interaction with the color photoresist during the polishing process. Therefore, over-polishing or over-etching of the patterns can be avoided. Especially by using the slurry compositions of this invention, the produced color filter provides better pattern fidelity.
- the following examples 1-17 are used to further describe the details of this invention. However, these examples are not used to limit the scope of this invention.
- the slurry compositions including the abrasives, the buffer solution and the additives used in examples 1-17 are listed in Table 1, while the related physical properties and experimental data, including particle sizes and polishing rates are listed in Table 2.
- the prepared slurry compositions are used to polish color filter photoresists.
- the peak heights for the three-color photoresists red (R), green (G) and blue (B) are measured and noted. After polishing, they are measured again to determine the polishing effect of the polishing slurries. Under the prerequisite of RGB loss lower than 500° A, the polishing rates of the polishing slurries are investigated.
- Polishing slurry flow rate 120 ml/min
- the thickness difference of color photoresist between before and after polishing is divided by the polishing time to obtain the polishing rate.
- the thickness of the color photoresist is measured by KLA Tencor P15 surface profiler.
- ⁇ h R / ⁇ h G / ⁇ h B represents the average removal amount of the color photoresists in red, green and blue respectively.
- Example 1 As shown in Table 1 and Table 2, in Example 1, 20 wt % polycrystalline alumina is used as the abrasive for the polishing slurry; under the down force of 0.08 psi, the average polishing rates ( ⁇ h R / ⁇ h G / ⁇ h B , the removal amount in 20 seconds) of the polishing slurry are excellent.
- Example 2 10 wt % polycrystalline alumina is used as the abrasive for the polishing slurry; under the down force of 0.08 psi, the average polishing rates ( ⁇ h R / ⁇ h G / ⁇ h B , the removal amount in 20 seconds) of the polishing slurry are lower than that in Example 1, but satisfactory for color filter manufacturing.
- Example 3 As shown in Table 1 and Table 2, in Example 3, 5 wt % Surfactant AG (Merck EC) is added as the surfactant and 10 wt % polycrystalline alumina is used as the abrasive for the polishing slurry; under the down force of 0.08 psi, the average polishing rates ( ⁇ h R / ⁇ h G / ⁇ h B , the removal amount in 20 seconds) are increased significantly due to the addition of the surfactant. The addition of surfactant can increase the polishing rate.
- Surfactant AG Merck EC
- 10 wt % polycrystalline alumina is used as the abrasive for the polishing slurry
- Example 4 As shown in Table 1 and Table 2, in Example 4, 5 wt % SPS-1100B (Merck EC) is added as the surfactant and 10 wt % polycrystalline alumina is used as the abrasive for the polishing slurry. Under the down force of 0.08 psi, for the average polishing rates ( ⁇ h R / ⁇ h G / ⁇ h B , the removal amount in 20 seconds) of the three colors red (R), green (G) and blue (B), the average polishing rate ⁇ h G increases significantly while the average polishing rates of the other two colors are decreased. Hence, the surfactant has different impacts on various color photoresist materials.
- Example 7 As shown in Table 1 and Table 2, in Example 7, 20 wt % polycrystalline alumina is used as the abrasive for the polishing slurry and 3 wt % N-methylpyrrolidone is added to the slurry. Under the down force of 0.05 psi, the average polishing rates ( ⁇ h R / ⁇ h G / ⁇ h B the removal amount in 20 seconds) are pretty high and the average polishing rates for three colors are similar. In Example 8, by adding 5 wt % N-N-methylpyrrolidone, the average polishing rate ⁇ h G is significantly increased, while the average polishing rates ⁇ h R and ⁇ h B are decreased. Hence, the differences between the average polishing rates of three colors become larger. Accordingly, the addition amount of the surfactant needs to be precisely controlled.
- Example 9 As shown in Table 1 and Table 2, in Example 9, 20 wt % polycrystalline alumina is used as the abrasive for the polishing slurry and 3 wt % butyrolactonol is added to the slurry. Under the down force of 0.05 psi, the average polishing rates ( ⁇ h R / ⁇ h G / ⁇ h B , the removal amount in 20 seconds) are pretty high. However, the average polishing rates of three colors are dissimilar. In Example 10, by adding 5 wt % butyrolactonol, the average polishing rates are decreased. Therefore, the addition amount of the surfactant needs to be precisely controlled.
- Example 11 As shown in Table 1 and Table 2, in Example 11 ⁇ 13, 20 wt % calcined alumina is used as the abrasive for the polishing slurry; calcined alumina is a mono-crystalline alumina.
- the primary particle size and secondary particle size of calcined alumina in Examples 11 and 12 are evidently different.
- the larger particle sizes in Example 12 result in high polishing rates.
- the lower pH value and the larger secondary particle size in Example 13 give higher polishing rates.
- calcined alumina has higher polishing rate than polycrystalline alumina or fumed alumina.
- Example 14 20 wt % fumed alumina is used as the abrasive for the polishing slurry.
- the major components of fumed alumina include amorphous alumina and partially crystalline alumina. Fumed alumina has very small primary particle size and hardness lower than a-phase polycrystalline alumina and calcined alumina, thus providing weaker cutting capability.
- fumed alumina is dispersed in de-ionized water and formulated into polishing slurry. The polishing tests show lower polishing rates.
- Example 15 As shown in Table 1 and Table 2, in Example 15, 5 wt % ceria is used as the abrasive for the polishing slurry.
- the ceria particle is synthesized by a hydrothermal process, having particles with a small primary size in spherical shape.
- Ceria has the hardness equivalent to that of silica and but has a high activity for polishing.
- the polishing rate herein is higher than that by using 20 wt % fumed alumina (in Example 14) or colloidal alumina (in Example 16).
- colloidal silica As shown in Table 1 and Table 2, in Example 16, 20 wt % colloidal silica is used as the abrasive for the polishing slurry.
- the major components of colloidal silica include amorphous silica and pH buffer solution.
- Colloidal silica has a larger primary particle size and smaller secondary particle size, due to the excellent dispersion of particles, thus adversely affecting its cutting capability. The results show rather low polishing rates.
- fumed silica As shown in Table 1 and Table 2, in Example 17, 12.1 wt % fumed silica is used as the abrasive for the chemical mechanical polishing slurry for the dielectric layer.
- the major components of fumed silica include amorphous silica. Fumed silica has primary particle sizes of about 20 nm and larger secondary particle sizes resulting from the formation of dense agglomerates. With higher pHs, the results show rather good polishing rates.
- a commercially available alumina polishing slurry and the polishing slurry of this invention are used to polish the color filter samples.
- the SEM photograph of the unpolished color filter sample is shown in FIG. 3 .
- the SEM photograph of the color filter sample polished by the polishing slurry of this invention is shown in FIG. 4 .
- the SEM photograph of the color filter sample polished by the commercially available alumina polishing slurry is shown in FIG. 5 .
- the color filter sample polished by the polishing slurry of this invention shows a better planarization result than that polished by the commercially available alumina polishing slurry.
- the polishing slurry of this invention provides a polishing rate at least 10% higher than that of the commercially available alumina polishing slurry.
- the slurry composition for color filters provided in this invention can prevent over-polishing and the undesired etching problems.
- the slurry composition for color filter polishing provided in this invention is stable and can stay effective for a long period. By suing such composition, the pattern reliability of the polished color filters is superior and the production throughput and yield can be further improved.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a slurry composition for polishing color filters. The slurry composition at least includes an abrasive, a buffer solution and an additive. The abrasive is selected from the group consisting of alumina, ceria, magnesia, silica, titania, zirconia, cupric oxide, ferric oxide, zinc oxide and the mixture thereof. The buffer solution is used for adjusting pH to a desired range. The additive is used for stabilizing the polishing composition and also improving the polishing performance.
Description
- 1. Field of Invention
- The present invention relates to a polishing slurry. More particularly, the present invention relates to a slurry composition for color filter polishing.
- 2. Description of Related Art
- Following the progress of display technologies, the conventional bulky cathode ray tube (CRT) displays are being gradually replaced by the flat panel displays. The thinner and lighter flat panel display devices not only provide excellent image quality, but also provide advantages such as excellent mobility, durability and energy saving. These flat panel display products include liquid crystal display (LCD), organic electro-luminescence display (OEL or OLED), polymer light emitting diode (PLED or LEP), field emission display (FED), and plasma display panel (PDP).
- The trends of LCD display development are full color, large size, high resolution and low cost. For best image quality, the LCD device employs the color filter to present color image. The color filter affects the image properties, such as contrast, luminance and surface reflection of the display panels.
- The color filter is a layer of color photoresist consisting of three colors i.e., red, green and blue arranged in a highly ordered pattern. The driver IC to provide the grey-scale light controls the backlight source, and the grey-scale light passes through the color filter to present red, green or blue light. The red, green or blue lights are further combined to form color images. Color filter is one of the major components for the TFT-LCD panel display. It is critical to improve the quality of color filter for image quality, throughput and cost considerations.
-
FIG. 1 schematically shows the structure of prior art color filter. InFIG. 1 , the structure of the color filter is composed of aglass substrate 100, ablack matrix 102, a color layer 104 a-104 c, an over-coatlayer 106 and an ITOconductive film 108. The thickness of theglass substrate 100 is being reduced to about 0.63 mm or 0.55 mm for reducing the weight of large LCD panel. Theblack matrix 102 is used to isolate the three-color photoresist layers 104 a-104 c and is essential for enhancing the color contrast. In general, theblack matrix 102 requires low reflection for better color performance. The material of theblack matrix 102 can be chromium or resin. - Color filters can be produced by dye dispersion method, staining method, printing method or electrical coloring method. The dye dispersion method can provide excellent reliability, resolution and high-temperature resistance, and is thus widely used in the industry.
- The color photoresist ink used in the dye dispersion method includes dye, dispersant, additive, coupling resin, reactive dilution agent as well as photoactive starting agent and solvent. The color photoresist ink for coloring the three true colors (red, green and blue) is generally base-developed negative photoresist. The main components of the color photoresist ink are dye compounds, including azo dye compounds phthalocyanine organic pigments and various heterocyclic compounds. Depending on the product function or the process consideration, various mixtures can be used.
- The dye dispersion method of producing color filter includes formation of black matrix, RGB and ITO layers. Regarding the formation of black matrix, a low-reflective double-layered film of chromium oxide/chromium is sputtered over the glass substrate covered with a silicon oxynitride protective layer. The low-reflective film of chromium oxide/chromium is also called the metal black layer. Afterwards, a positive photoresist layer is spin-coated on the metal black layer. Using the mask with the pattern of black matrix, the photoresist layer is exposed to UV light and developed, and the metal black layer is etched to obtain the pattern of black matrix.
- After the black matrix pattern is formed, the RGB process is followed. In the RGB process, the red, green and blue color photoresists are deposited to designated positions to form the RGB pattern. Firstly, the red (R) color photoresist is spin-coated and exposed to UV light (<248 nm) by using the mask with the R pattern. After exposure, a developing agent is used to remove the un-exposed portion to form the R pattern. Afterwards, post-baking over 200° C. is performed to make the R pattern more resistant. Following the similar procedure, the green (G) pattern and the blue (B) pattern are formed. Subsequently the ITO transparent electrode layer is deposited on the top of RGB layer, thus completing the manufacture of color filters.
- For better optical property and visual effect, the surface of color filter needs to be planarized, using a chemical mechanical polishing (CMP) method. As shown in
FIG. 2 , after obtaining the R, G, B patterns, the black matrix (BM) is present between each pattern for isolation. Depending on different requirements, the peak heights of the R, G, and B patterns after polishing (i.e. R1, R2, B1, B2, G1, G2) are required to below 5000 angstroms, while the height differences of the bottom positions of the patterns after polishing (called R, G, B loss) are required to be less than 500 angstroms. - However, the chemical ingredients in CMP slurry may result in undesired property alteration of the dyes of the color photoresists during and after the CMP operation.
- The present invention provides a slurry composition for color filter polishing. The slurry composition reduces interactions between the slurry and the color filter materials including resin, dye and dispersant, so that the reliability and service life of color filter can be ensured. By using such slurry composition, the manufacture stability for color filter production can be improved, and thus increasing the production throughput.
- As embodied and broadly described herein, the present invention provides a slurry composition for polishing color filter comprising at least an abrasive, a buffer solution and an additive. The abrasive is selected from the group consisting of alumina, ceria, magnesia, silica, titania, zirconia, cupric oxide, ferric oxide, zinc oxide and the mixtures thereof. The abrasive can be provided in calcined, colloidal or fumed forms.
- The slurry composition has a primary particle size smaller than 1.0 micron, mostly 10 nm to 1.0 micron, and preferably 40 nm to 200 nm. The primary particle size distribution of the abrasive particles is mono-distribution. Alternatively, abrasives of two different primary particle sizes can be mixed in the slurry composition, meaning that the primary particle size distribution can be a bimodal distribution. The abrasive particles of the slurry composition have secondary particle sizes ranging from 100 nm to 10 microns, preferably 200 nm to 800 nm. The content of the abrasive in the slurry composition ranges from about 1 wt % to 45 wt %, preferably 2 wt % to 25 wt %.
- The specific surface area of the abrasive in the slurry composition ranges from about 5-400 m2/g, preferably 20-200 m2/g, for minimizing the formation of scratches, dents or other defects during polishing.
- The buffer solution is used for adjusting the pH values and also acts as the pH buffer. The buffer solution can be selected from the group consisting of inorganic acids, organic acids, inorganic bases, the mixtures thereof and the salts thereof. The content of the buffer solution in the slurry composition ranges from 2 wt % to 15 wt %. The choice of the buffer solution depends on the abrasive used in the slurry composition. The organic acids used as the buffer solution can be selected from the group consisting of glycin, formic acid, acetic acid, propionic acid, malic acid, citric acid, succinic acid and the mixtures thereof. If the organic acid is selected for the buffer solution, organic or inorganic salts containing sodium, potassium, calcium or iron can be further added.
- The additive used for the slurry composition may include one or more surfactants. The surfactant can adjust the zeta potential for improving dispersion or particle suspension at a specific pH, and thus stabilize the slurry composition. The surfactant can be selected from the group consisting of polycarboxylic acids; alkali salts of polycarboxylic acids, and ammonium salts of polycarboxylic acids, aliphatic polymers and the mixtures thereof. The content of the surfactant in the slurry composition ranges from about 0.3 wt % to 1.0 wt %.
- Depending on the abrasive used in the slurry composition, the additive can be selected from the group consisting of N-methyl pyrrolidone, methacrylamide, butyrolactone, N-vinyl pyrrolidone and the mixtures thereof. Alternatively, the additive can be selected from the group consisting of methacrylamide, N, N′-methylene bisacrylamine, polyethylene glycol dimethacrylate, methoxy polyethylene glycol monomethacrylate and the mixtures thereof. The additive can not only increase polishing rate, but also improve polishing quality.
- The slurry composition of this invention is suitable for polishing color filter, and the slurry compositions of this invention provide higher polishing rates than the conventional polishing slurry.
- The abrasive added to the slurry composition of this invention is able to remove color photoresist mildly during polishing, and thus avoid overpolishing and increase pattern reliability of color filter. Hence, the polished color filter layer has precise topography control and thus excellent color image property can be achieved.
- It is to be understood that both the foregoing general description and the following detailed description are exemplary, and are intended to provide further explanation of the invention as claimed.
- The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention. In the drawings,
-
FIG. 1 schematically shows the structure of prior art color filter. -
FIG. 2 schematically shows the structure of prior art color filter. -
FIG. 3 is the SEM photograph of the unpolished color filter sample. -
FIG. 4 is the SEM photograph of the color filter sample polished by the polishing slurry of this invention. -
FIG. 5 is the SEM photograph of the color filter sample polished by the commercially available alumina polishing slurry. - The slurry composition of the present invention for polishing color filter refers to chemical agents for assisting the polishing of color filter. The slurry composition of the present invention can be used alone, or in combination with other polishing slurries for polishing color filter.
- The present invention provides a slurry composition for polishing color filter comprising one or more abrasives. The abrasive is selected from the group consisting of alumina, ceria, magnesia, silica, titania, zirconia, cupric oxide, ferric oxide, zinc oxide and the mixtures thereof. The abrasive can be provided in colloidal or fumed forms. The content of the abrasive in the slurry composition ranges from about 1 wt % to 45 wt %, preferably 2 wt % to 25 wt %.
- The abrasive is preferably of high purity. “High purity” means that the total impurity (such as the impurity in raw materials or from the treatments) content of the source is less than 100 ppm. The purpose is to reduce potential contamination from the slurry composition toward the color filter materials.
- The abrasive is preferably mixed with hydrophilic or aqueous media (such as de-ionized water) to prepare aqueous solution by using a high-shear dispersion technique. For example, the abrasive can be added slowly to the suitable medium to form a colloidal solution. The colloidal solution is mixed under a high-shear condition and becomes stable by adjusting the pH of colloidal solution.
- The slurry composition of this invention includes at least a stabilizer. The stabilizer can stabilize the surface charge of the abrasive particles in the slurry under acidic condition, inhibit the formation of large particle aggregates, and thus extend long-term stability of the slurry composition.
- The slurry composition of this invention includes at least a buffer solution for adjusting the pH value and serving as the pH buffer. The buffer solution can be selected from the group consisting of inorganic acids, organic acids, inorganic bases, the mixtures thereof and the salts thereof. The choice of the buffer solution depends on the abrasive used in the slurry composition. The organic acids used as the buffer solution can be selected from the group consisting of glycine, formic acid, acetic acid, propionic acid, malic acid, citric acid, succinic acid and the mixtures thereof. If the organic acid is selected for the buffer solution, organic or inorganic salts containing sodium, potassium, calcium or iron can be further added. The content of the buffer solution in the slurry composition ranges from 2 wt % to 15 wt %. In addition, the pH of the slurry composition is preferably adjusted to a range between 5 and 7 using the buffer solution.
- The additive used for the slurry composition may include one or more surfactants. Depending on the abrasive used in the slurry composition, the surfactant can be selected from the group consisting of alkali salts or ammonium salts of poly carboxylic acids, aliphatic polymers and the mixtures thereof. The content of the surfactant in the slurry composition ranges from about 0.3 wt % to 1.0 wt %. The molecular weight of the aliphatic polymer is between 1000 and 5000 Dalton, for example.
- The additive used for the slurry composition can also be selected from the group consisting of N-methyl pyrrolidone, methacrylamide, butyrolactone, N-vinyl pyrrolidone and the mixtures thereof. Alternatively, the additive can be selected from the group consisting of methacrylamide, N,N′-methylene bisacrylamine, polyethylene glycol dimethacrylate, methoxy polyethylene glycol monomethacrylate and the mixtures thereof.
- The slurry composition of this invention or the composition containing the slurry composition of this invention can be provided to the polishing pad of the polishing platform. The color filter is polished due to the relative motion between the polishing pad and the color filter substrate. Between the surface of the polishing pad and the color filter substrate, the polishing slurry is continuously provided during polishing.
- The slurry composition of this invention employs one or more specific abrasives that have no chemical interaction with the color photoresist during the polishing process. Therefore, over-polishing or over-etching of the patterns can be avoided. Especially by using the slurry compositions of this invention, the produced color filter provides better pattern fidelity. The following examples 1-17 are used to further describe the details of this invention. However, these examples are not used to limit the scope of this invention. The slurry compositions including the abrasives, the buffer solution and the additives used in examples 1-17 are listed in Table 1, while the related physical properties and experimental data, including particle sizes and polishing rates are listed in Table 2. In examples 1-17, the prepared slurry compositions are used to polish color filter photoresists.
- At first, the peak heights for the three-color photoresists red (R), green (G) and blue (B) are measured and noted. After polishing, they are measured again to determine the polishing effect of the polishing slurries. Under the prerequisite of RGB loss lower than 500° A, the polishing rates of the polishing slurries are investigated.
- The experimental conditions are as follows:
- Down force of the polishing platform: 0.08 psi or 0.05 psi
- Rotation speed of the polishing platform: 20 rpm
- Polishing time: 20 seconds
- Polishing slurry flow rate: 120 ml/min
- The thickness difference of color photoresist between before and after polishing is divided by the polishing time to obtain the polishing rate. The thickness of the color photoresist is measured by KLA Tencor P15 surface profiler. In Tables 1 and 2, ΔhR/ΔhG/ΔhB represents the average removal amount of the color photoresists in red, green and blue respectively.
-
TABLE 1 Abrasive Buffer Solution Additive Content Content Content Examples Name (wt %) Name (wt %) Name (wt %) 1 polycrystalline 20 organic acids <1 — — alumina potassium nitrate, <5 potassium iodide or potassium carbonate 2 polycrystalline 10 organic acids <1 — — alumina potassium nitrate, <5 potassium iodide or potassium carbonate 3 polycrystalline 10 organic acids <1 Surfactant AG 1 alumina potassium nitrate, <5 (product name) potassium iodide or potassium carbonate 4 polycrystalline 10 organic acids <1 SPS-1100B 1 alumina potassium nitrate, <5 (product name) potassium iodide or potassium carbonate 5 polycrystalline 10 organic acids <1 alumina potassium nitrate, <5 potassium iodide or potassium carbonate 6 polycrystalline 20 organic acids <1 alumina potassium nitrate, <5 potassium iodide or potassium carbonate 7 polycrystalline 20 organic acids <1 N-N-methyl 3 alumina potassium nitrate, <5 pyrrolidone potassium iodide or potassium carbonate 8 polycrystalline 20 organic acids <1 N-N-methyl 5 alumina potassium nitrate, <5 pyrrolidone potassium iodide or potassium carbonate 9 polycrystalline 20 organic acids <1 Butyrolactonol 3 alumina potassium nitrate, <5 potassium iodide or potassium carbonate 10 polycrystalline 20 organic acids <1 Butyrolactonol 5 alumina potassium nitrate, <5 potassium iodide or potassium carbonate 11 Calcined 20 organic acids <1 alumina potassium nitrate, <5 potassium iodide or potassium carbonate 12 Calcined 20 organic acids <1 alumina potassium nitrate, <5 potassium iodide or potassium carbonate 13 Calcined 20 organic acids <1 — — alumina potassium nitrate, <5 potassium iodide or potassium carbonate 14 Fumed 20 — — — — alumina 15 Precipitated 5 — — — — ceria 16 Colloidal 20 KOH <1 — — silica 17 Fumed silica 12.1 HCl, KOH <1 MA-21(Product 0.5 name) -
TABLE 2 Primary Secondary particle particle Average polishing rate size size ΔhR ΔhG ΔhB Down Examples pH (nm) (nm) Å/20 sec Å/20 sec Å/20 sec force (psi) 1 6.0 ~20/50 ~200 1274 1602 1699 0.08 2 6.0 ~20/50 ~200 1391 1388 1828 0.08 3 6.0 ~20/50 ~200 2453 3976 2178 0.08 4 6.0 ~20/50 ~200 814 2691 984 0.08 5 6.0 ~20/50 ~200 891 1137 1156 0.05 6 6.0 ~20/50 ~200 1031 1309 1393 0.05 7 6.0 ~20/50 ~200 1535 1625 1619 0.05 8 6.0 ~20/50 ~200 1447 1920 1409 0.05 9 6.0 ~20/50 ~200 1742 2273 1487 0.05 10 6.0 ~20/50 ~200 1586 2040 1471 0.05 11 6.0 ~50 195 1080 1384 918 0.05 12 6.0 ~70 314 3397 3744 3181 0.05 13 4.1 ~50 224 1631 1749 1479 0.05 14 4.4 ~13 156 107 396 129 0.05 15 4.3 ~20 173 258 404 118 0.05 16 9.6 ~60 97 146 348 111 0.05 17 11.1 ~20 ~120 1380 1960 1561 0.05 - As shown in Table 1 and Table 2, in Example 1, 20 wt % polycrystalline alumina is used as the abrasive for the polishing slurry; under the down force of 0.08 psi, the average polishing rates (ΔhR/ΔhG/ΔhB, the removal amount in 20 seconds) of the polishing slurry are excellent.
- As shown in Table 1 and Table 2, in Example 2, 10 wt % polycrystalline alumina is used as the abrasive for the polishing slurry; under the down force of 0.08 psi, the average polishing rates (ΔhR/ΔhG/ΔhB, the removal amount in 20 seconds) of the polishing slurry are lower than that in Example 1, but satisfactory for color filter manufacturing.
- As shown in Table 1 and Table 2, in Example 3, 5 wt % Surfactant AG (Merck EC) is added as the surfactant and 10 wt % polycrystalline alumina is used as the abrasive for the polishing slurry; under the down force of 0.08 psi, the average polishing rates (ΔhR/ΔhG/ΔhB, the removal amount in 20 seconds) are increased significantly due to the addition of the surfactant. The addition of surfactant can increase the polishing rate.
- As shown in Table 1 and Table 2, in Example 4, 5 wt % SPS-1100B (Merck EC) is added as the surfactant and 10 wt % polycrystalline alumina is used as the abrasive for the polishing slurry. Under the down force of 0.08 psi, for the average polishing rates (ΔhR/ΔhG/ΔhB, the removal amount in 20 seconds) of the three colors red (R), green (G) and blue (B), the average polishing rate ΔhG increases significantly while the average polishing rates of the other two colors are decreased. Hence, the surfactant has different impacts on various color photoresist materials.
- As shown in Table 1 and Table 2, 10 wt % and 20 wt % polycrystalline alumina is used respectively as the abrasive for the polishing slurry in Examples 5 and 6 (the same composition as Example 2 and 1 respectively). Under the down force of 0.05 psi, the average polishing rates (ΔhR/ΔhG/ΔhB, the removal amount in 20 seconds) for the two compositions are excellent.
- As shown in Table 1 and Table 2, in Example 7, 20 wt % polycrystalline alumina is used as the abrasive for the polishing slurry and 3 wt % N-methylpyrrolidone is added to the slurry. Under the down force of 0.05 psi, the average polishing rates (ΔhR/ΔhG/ΔhB the removal amount in 20 seconds) are pretty high and the average polishing rates for three colors are similar. In Example 8, by adding 5 wt % N-N-methylpyrrolidone, the average polishing rate ΔhG is significantly increased, while the average polishing rates ΔhR and ΔhB are decreased. Hence, the differences between the average polishing rates of three colors become larger. Accordingly, the addition amount of the surfactant needs to be precisely controlled.
- As shown in Table 1 and Table 2, in Example 9, 20 wt % polycrystalline alumina is used as the abrasive for the polishing slurry and 3 wt % butyrolactonol is added to the slurry. Under the down force of 0.05 psi, the average polishing rates (ΔhR/ΔhG/ΔhB, the removal amount in 20 seconds) are pretty high. However, the average polishing rates of three colors are dissimilar. In Example 10, by adding 5 wt % butyrolactonol, the average polishing rates are decreased. Therefore, the addition amount of the surfactant needs to be precisely controlled.
- As shown in Table 1 and Table 2, in Example 11˜13, 20 wt % calcined alumina is used as the abrasive for the polishing slurry; calcined alumina is a mono-crystalline alumina. The primary particle size and secondary particle size of calcined alumina in Examples 11 and 12 are evidently different. The larger particle sizes in Example 12 result in high polishing rates. When compared with Example 11, the lower pH value and the larger secondary particle size in Example 13 give higher polishing rates. For the slurry using alumina as the abrasive, due to the differences in particle size, e shape or crystal phases, calcined alumina has higher polishing rate than polycrystalline alumina or fumed alumina.
- As shown in Table 1 and Table 2, in Example 14, 20 wt % fumed alumina is used as the abrasive for the polishing slurry. The major components of fumed alumina include amorphous alumina and partially crystalline alumina. Fumed alumina has very small primary particle size and hardness lower than a-phase polycrystalline alumina and calcined alumina, thus providing weaker cutting capability. In Example 14, fumed alumina is dispersed in de-ionized water and formulated into polishing slurry. The polishing tests show lower polishing rates.
- As shown in Table 1 and Table 2, in Example 15, 5 wt % ceria is used as the abrasive for the polishing slurry. Herein, the ceria particle is synthesized by a hydrothermal process, having particles with a small primary size in spherical shape. Ceria has the hardness equivalent to that of silica and but has a high activity for polishing. Though the solid content used being only 5 wt % ceria, the polishing rate herein is higher than that by using 20 wt % fumed alumina (in Example 14) or colloidal alumina (in Example 16).
- As shown in Table 1 and Table 2, in Example 16, 20 wt % colloidal silica is used as the abrasive for the polishing slurry. The major components of colloidal silica include amorphous silica and pH buffer solution. Colloidal silica has a larger primary particle size and smaller secondary particle size, due to the excellent dispersion of particles, thus adversely affecting its cutting capability. The results show rather low polishing rates.
- As shown in Table 1 and Table 2, in Example 17, 12.1 wt % fumed silica is used as the abrasive for the chemical mechanical polishing slurry for the dielectric layer. The major components of fumed silica include amorphous silica. Fumed silica has primary particle sizes of about 20 nm and larger secondary particle sizes resulting from the formation of dense agglomerates. With higher pHs, the results show rather good polishing rates.
- A commercially available alumina polishing slurry and the polishing slurry of this invention are used to polish the color filter samples. The SEM photograph of the unpolished color filter sample is shown in
FIG. 3 . The SEM photograph of the color filter sample polished by the polishing slurry of this invention is shown inFIG. 4 . The SEM photograph of the color filter sample polished by the commercially available alumina polishing slurry is shown inFIG. 5 . The color filter sample polished by the polishing slurry of this invention shows a better planarization result than that polished by the commercially available alumina polishing slurry. Moreover, the polishing slurry of this invention provides a polishing rate at least 10% higher than that of the commercially available alumina polishing slurry. - From the experimental results, the slurry composition for color filters provided in this invention can prevent over-polishing and the undesired etching problems.
- The slurry composition for color filter polishing provided in this invention is stable and can stay effective for a long period. By suing such composition, the pattern reliability of the polished color filters is superior and the production throughput and yield can be further improved.
- It will be apparent to those skilled in the art that various modifications and variations can be made to the structure of the present invention without departing from the scope or spirit of the invention. In view of the foregoing, it is intended that the present invention cover modifications and variations of this invention provided they fall within the scope of the following claims and their equivalents.
Claims (23)
1. A polishing slurry composition for color filters, comprising:
at least an abrasive, wherein the abrasive is selected from the group consisting of alumina, ceria, magnesia, silica, titania, zirconia, cupric oxide, ferric oxide, zinc oxide and mixtures thereof;
a buffer solution for adjusting a pH value of the composition; and
an additive, for calibrating a zeta potential of particles of the abrasive in the composition under the pH value,
wherein the polishing slurry composition does not comprise an oxidizing agent.
2. The composition of claim 1 , wherein the abrasive is in a fumed form or a colloidal form.
3. The composition of claim 1 , wherein silica is calcined silica.
4. The composition of claim 1 , wherein primary particle sizes of the particles range from 10 nm to 1.0 micron.
5. The composition of claim 1 , wherein primary particle sizes of the particles range from 40 nm to 200 nm.
6. The composition of claim 1 , wherein secondary particle sizes of the particles range from 100 nm to 10 microns.
7. The composition of claim 1 , wherein secondary particle sizes of the particles range from 200 nm to 800 nm.
8. The composition of claim 1 , wherein a primary particle size distribution of the particles is mono-distribution.
9. The composition of claim 1 , wherein a primary particle size distribution of the particles is bimodal distribution.
10. (canceled)
11. The composition of claim 1 , wherein a content of the abrasive in the polishing slurry composition ranges from about 2% to 25 wt %.
12. The composition of claim 1 , wherein the pH value of the polishing slurry composition ranges from 2 to 8.
13. The composition of claim 1 , wherein the pH value of the polishing slurry composition ranges from 5 to 7.
14. The composition of claim 1 , wherein the buffer solution is selected from the group consisting of inorganic acids, organic acids, inorganic bases, mixtures thereof and salts thereof.
15. The composition of claim 14 , wherein the organic acids are selected from the group consisting of glycin, formic acid, acetic acid, propionic acid, malic acid, citric acid, succinic acid and mixtures thereof.
16. (canceled)
17. The composition of claim 1 , wherein the additive includes a surfactant.
18. The composition of claim 17 , wherein a content of the surfactant in the polishing slurry composition ranges from about 0.3 wt % to 1.0 wt %.
19. The composition of claim 1 , wherein the surfactant is selected from the group consisting of alkali salts of poly carboxylic acids, ammonium salts of poly carboxylic acids, aliphatic polymers and mixtures thereof.
20. The composition of claim 19 , wherein a molecular weight of the aliphatic polymers is about 1000-5000 Daltons.
21. The composition of claim 1 , wherein the additive is selected from the group consisting of N-methyl pyrrolidone, methacrylamide, butyrolactone, N-vinyl pyrrolidone, N,N′-methylene bisacrylamine, polyethylene glycol dimethacrylate, methoxy polyethylene glycol monomethacrylate and mixtures thereof.
22. A polishing slurry composition for color filters, consisting of:
at least an abrasive, wherein the abrasive is selected from the group consisting of alumina, ceria, magnesia, silica, titania, zirconia, cupric oxide, ferric oxide, zinc oxide and mixtures thereof;
a buffer solution for adjusting a pH value of the composition; and
an additive, for calibrating a zeta potential of particles of the abrasive in the composition under the pH value.
23. A method for polishing color filters, comprising:
providing a slurry composition to a polishing pad of a polishing platform, the slurry composition comprising:
at least an abrasive, wherein the abrasive is selected from the group consisting of alumina, ceria, magnesia, silica, titania, zirconia, cupric oxide, ferric oxide, zinc oxide and mixtures thereof;
a buffer solution for adjusting a pH value of the composition; and
an additive, for calibrating a zeta potential of particles of the abrasive in the composition under the pH value;
polishing the color filter by providing relative motion between the polishing pad and a color filter substrate to planarize the color filter substrate; and
continuously providing the slurry composition between the surface of the polishing pad and the color filter substrate.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW094119462A TWI271555B (en) | 2005-06-13 | 2005-06-13 | Slurry composition for polishing color filter |
PCT/IB2006/001571 WO2006134462A2 (en) | 2005-06-13 | 2006-06-12 | Slurry composition for color filter polishing |
Publications (1)
Publication Number | Publication Date |
---|---|
US20080207091A1 true US20080207091A1 (en) | 2008-08-28 |
Family
ID=37532672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/915,733 Abandoned US20080207091A1 (en) | 2005-06-13 | 2006-06-12 | Slurry Composition For Color Filter Polishing |
Country Status (11)
Country | Link |
---|---|
US (1) | US20080207091A1 (en) |
EP (1) | EP1910489A2 (en) |
JP (1) | JP2008543577A (en) |
KR (1) | KR20080016842A (en) |
CN (1) | CN101208398A (en) |
AT (1) | AT505847A1 (en) |
DE (1) | DE112006001461T5 (en) |
GB (1) | GB2441263A (en) |
IL (1) | IL187547A0 (en) |
TW (1) | TWI271555B (en) |
WO (1) | WO2006134462A2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100120250A1 (en) * | 2007-02-27 | 2010-05-13 | Hitachi Chemical Co., Ltd. | Metal polishing slurry and polishing method |
US20120111224A1 (en) * | 2009-04-30 | 2012-05-10 | Center For Abrasives & Refrac R & D C.A.R.R.D Gmbh | Dispersion, slurry and process for producing a casting mould for precision casting using the slurry |
US20120311935A1 (en) * | 2010-02-24 | 2012-12-13 | Basf Se | Abrasive articles, method for their preparation and method of their use |
WO2022031601A1 (en) * | 2020-08-03 | 2022-02-10 | Cmc Materials, Inc. | Titanium dioxide containing ruthenium chemical mechanical polishing slurry |
CN115785818A (en) * | 2022-11-10 | 2023-03-14 | 湖北五方光电股份有限公司 | Polishing solution and preparation method and application thereof |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8685123B2 (en) | 2005-10-14 | 2014-04-01 | Saint-Gobain Ceramics & Plastics, Inc. | Abrasive particulate material, and method of planarizing a workpiece using the abrasive particulate material |
WO2011104640A1 (en) | 2010-02-24 | 2011-09-01 | Basf Se | Aqueous polishing agent and graft copolymers and their use in process for polishing patterned and unstructured metal surfaces |
US20120264303A1 (en) * | 2011-04-15 | 2012-10-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing slurry, system and method |
CN103756571A (en) * | 2013-12-25 | 2014-04-30 | 上海华明高纳稀土新材料有限公司 | Rare-earth polishing powder and preparation method thereof |
CN104017501B (en) * | 2014-06-12 | 2015-09-30 | 江南大学 | A kind of ultrasonic atomizatio type polishing fluid being applicable to TFT-LCD glass substrate |
JP2016165771A (en) * | 2015-03-10 | 2016-09-15 | 株式会社ディスコ | Processing liquid circulation type processing system |
TWI722696B (en) * | 2019-12-04 | 2021-03-21 | 臺灣永光化學工業股份有限公司 | Polishing composition for polishing heterogeneous film on substrate and polishing method using the same |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10102038A (en) * | 1996-09-30 | 1998-04-21 | Hitachi Chem Co Ltd | Cerium oxide abrasive and grinding of substrate |
JPH1180708A (en) * | 1997-09-09 | 1999-03-26 | Fujimi Inkooporeetetsudo:Kk | Composition for polishing |
CN1063205C (en) * | 1998-04-16 | 2001-03-14 | 华东理工大学 | Nanometer silicon dioxide polishing agent and its preparing method |
JP4608925B2 (en) * | 1998-12-25 | 2011-01-12 | 日立化成工業株式会社 | Additive for CMP abrasives |
JP4604727B2 (en) * | 1998-12-25 | 2011-01-05 | 日立化成工業株式会社 | Additive for CMP abrasives |
JP2001192647A (en) * | 2000-01-14 | 2001-07-17 | Seimi Chem Co Ltd | Composition for polishing, containing cerium oxide, and polishing method |
JP2001358020A (en) * | 2000-06-12 | 2001-12-26 | Matsushita Electric Ind Co Ltd | Hybrid component and manufacturing method thereof |
TWI281493B (en) * | 2000-10-06 | 2007-05-21 | Mitsui Mining & Smelting Co | Polishing material |
JP4885352B2 (en) * | 2000-12-12 | 2012-02-29 | 昭和電工株式会社 | Abrasive slurry and fine abrasive |
CN1746255B (en) * | 2001-02-20 | 2010-11-10 | 日立化成工业株式会社 | Polishing compound and method for polishing substrate |
CN1192073C (en) * | 2001-02-21 | 2005-03-09 | 长兴化学工业股份有限公司 | Chemical and mechanical grinding composition |
JP2003071697A (en) * | 2001-09-04 | 2003-03-12 | Toray Ind Inc | Method of correcting color filter board |
CN1306562C (en) * | 2001-10-26 | 2007-03-21 | 旭硝子株式会社 | Polishing compound, method for production thereof, and polishing method |
JP2003306669A (en) * | 2002-04-16 | 2003-10-31 | Nihon Micro Coating Co Ltd | Polishing slurry |
JP4273921B2 (en) * | 2002-10-28 | 2009-06-03 | 日産化学工業株式会社 | Cerium oxide particles and production method by humidified firing |
JP2004297035A (en) * | 2003-03-13 | 2004-10-21 | Hitachi Chem Co Ltd | Abrasive agent, polishing method, and manufacturing method of electronic component |
JP2004277474A (en) * | 2003-03-13 | 2004-10-07 | Hitachi Chem Co Ltd | Cmp abrasive, polishing method, and production method for semiconductor device |
-
2005
- 2005-06-13 TW TW094119462A patent/TWI271555B/en not_active IP Right Cessation
-
2006
- 2006-06-12 KR KR1020077028812A patent/KR20080016842A/en not_active Application Discontinuation
- 2006-06-12 AT AT0923706A patent/AT505847A1/en not_active Application Discontinuation
- 2006-06-12 EP EP06765514A patent/EP1910489A2/en not_active Withdrawn
- 2006-06-12 DE DE112006001461T patent/DE112006001461T5/en not_active Withdrawn
- 2006-06-12 JP JP2008515312A patent/JP2008543577A/en active Pending
- 2006-06-12 US US11/915,733 patent/US20080207091A1/en not_active Abandoned
- 2006-06-12 CN CNA2006800184992A patent/CN101208398A/en active Pending
- 2006-06-12 WO PCT/IB2006/001571 patent/WO2006134462A2/en active Application Filing
-
2007
- 2007-11-21 IL IL187547A patent/IL187547A0/en unknown
- 2007-12-07 GB GB0723980A patent/GB2441263A/en not_active Withdrawn
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100120250A1 (en) * | 2007-02-27 | 2010-05-13 | Hitachi Chemical Co., Ltd. | Metal polishing slurry and polishing method |
US8821750B2 (en) * | 2007-02-27 | 2014-09-02 | Hitachi Chemical Co., Ltd. | Metal polishing slurry and polishing method |
US20120111224A1 (en) * | 2009-04-30 | 2012-05-10 | Center For Abrasives & Refrac R & D C.A.R.R.D Gmbh | Dispersion, slurry and process for producing a casting mould for precision casting using the slurry |
US8778449B2 (en) * | 2009-04-30 | 2014-07-15 | Evonik Degussa Gmbh | Dispersion, slurry and process for producing a casting mould for precision casting using the slurry |
US20120311935A1 (en) * | 2010-02-24 | 2012-12-13 | Basf Se | Abrasive articles, method for their preparation and method of their use |
US9309448B2 (en) * | 2010-02-24 | 2016-04-12 | Basf Se | Abrasive articles, method for their preparation and method of their use |
WO2022031601A1 (en) * | 2020-08-03 | 2022-02-10 | Cmc Materials, Inc. | Titanium dioxide containing ruthenium chemical mechanical polishing slurry |
CN115785818A (en) * | 2022-11-10 | 2023-03-14 | 湖北五方光电股份有限公司 | Polishing solution and preparation method and application thereof |
Also Published As
Publication number | Publication date |
---|---|
GB0723980D0 (en) | 2008-01-30 |
KR20080016842A (en) | 2008-02-22 |
AT505847A1 (en) | 2009-04-15 |
WO2006134462A3 (en) | 2007-04-19 |
IL187547A0 (en) | 2008-03-20 |
GB2441263A (en) | 2008-02-27 |
TW200643482A (en) | 2006-12-16 |
TWI271555B (en) | 2007-01-21 |
EP1910489A2 (en) | 2008-04-16 |
WO2006134462A2 (en) | 2006-12-21 |
DE112006001461T5 (en) | 2008-04-17 |
JP2008543577A (en) | 2008-12-04 |
CN101208398A (en) | 2008-06-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20080207091A1 (en) | Slurry Composition For Color Filter Polishing | |
KR100814416B1 (en) | High planarity slurry composition and method of chemical mechanical polishing using the same | |
TWI450951B (en) | Chemical mechanical grinding water dispersions, chemical mechanical grinding methods, chemical mechanical grinding sets, and for the preparation of chemical mechanical grinding water system dispersion sets | |
KR101333866B1 (en) | Compositions and methods for cmp of indium tin oxide surfaces | |
KR20190041965A (en) | A black pigment, a production method thereof, a pigment dispersion, a photosensitive composition and a cured product thereof | |
US7241692B2 (en) | Method and structure for aluminum chemical mechanical polishing and protective layer | |
US20040221516A1 (en) | Abrasive slurry having high dispersion stability and manufacturing method for a substrate | |
US8409990B2 (en) | Chemical-mechanical polishing compositions and methods of making and using the same | |
US7708900B2 (en) | Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same | |
KR101371853B1 (en) | Polishing slurry | |
TWI488952B (en) | Cmp polishing liquid and polishing method using the same and fabricating method of semiconductor substrate | |
US8512593B2 (en) | Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same | |
EP2092034B1 (en) | Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same | |
CN101245234A (en) | Colorful spectral filter grinding fluid composition | |
US20050136669A1 (en) | Slurry for color photoresist planarization | |
US6488730B2 (en) | Polishing composition | |
KR20080088801A (en) | Slurry composition for polishing color filter | |
JP2008201983A (en) | PsiCOLOR FILTER POLISHING SLURRY COMPOSITION | |
TWI292435B (en) | Slurry composition for polishing color filter | |
KR102544609B1 (en) | Polishing slurry composition for tungsten layer | |
CN1331837A (en) | Combination CMP-etch method for forming thin planar layer over surface of device | |
KR100497410B1 (en) | Slurry Composition for Chemical Mechanical Polishing of Oxide with Enhanced Polishing Performance | |
CN1699015A (en) | Method and structure for chemical-mechanical polishing of aluminium | |
KR100524025B1 (en) | Metal CMP slurry containing biocide | |
KR20130069994A (en) | Chemical mechanical polishing slurry compositions and polishing method using the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: BASF AKTIENGESELLSCHAFT,GERMANY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:JENG, YU-LUNG;CHU, JEA-JU;LEE, CHANG-TAI;AND OTHERS;SIGNING DATES FROM 20071015 TO 20071022;REEL/FRAME:020165/0023 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |