CN1306562C - Polishing compound, method for production thereof, and polishing method - Google Patents

Polishing compound, method for production thereof, and polishing method Download PDF

Info

Publication number
CN1306562C
CN1306562C CNB028207246A CN02820724A CN1306562C CN 1306562 C CN1306562 C CN 1306562C CN B028207246 A CNB028207246 A CN B028207246A CN 02820724 A CN02820724 A CN 02820724A CN 1306562 C CN1306562 C CN 1306562C
Authority
CN
China
Prior art keywords
grinding agent
grinding
acid
formula
carbon number
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB028207246A
Other languages
Chinese (zh)
Other versions
CN1572017A (en
Inventor
竹宫聪
中泽伯人
金喜则
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KIYOMI CHEMICAL CO Ltd
AGC Inc
Original Assignee
KIYOMI CHEMICAL CO Ltd
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KIYOMI CHEMICAL CO Ltd, Asahi Glass Co Ltd filed Critical KIYOMI CHEMICAL CO Ltd
Publication of CN1572017A publication Critical patent/CN1572017A/en
Application granted granted Critical
Publication of CN1306562C publication Critical patent/CN1306562C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)

Abstract

A heterocyclic benzene compound such as benzotriazole, is dissolved in at least one substance selected from the group consisting of a primary alcohol having from 1 to 4 carbon atoms, a glycol having from 2 to 4 carbon atoms, an ether represented by the Formula 2 (wherein m is an integer of from 1 to 4), N-methyl-2-pyrrolidone, N,N-dimethylformamide, dimethyl sulfoxide, gamma -butyrolactone and propylene carbonate, and an aqueous dispersion of fine oxide particles which constitute abrasive grains is mixed therewith, whereby a polishing compound is obtained. By use of this polishing compound in polishing a substrate provided with an insulating film 2 on which a wiring metal film 4 and a barrier film 3 are formed, the formation of an embedded wiring 5 is made possible with low dishing, low erosion and low scratching at a high removal rate.

Description

The manufacture method of grinding agent, grinding agent and Ginding process
Technical field
The present invention relates to be used for the grinding agent of semiconductor equipment manufacturing process, relate in more detail being suitable for forming and adopt the tantalum metalloid as the grinding agent of imbedding metal wiring of barrier film materials and the Ginding process of this grinding agent grinding substrate of employing.
Background technology
In recent years, along with the highly integrated and high performance of semiconductor integrated circuit, people need the exploitation of the required Micrometer-Nanometer Processing Technology of miniaturization densification.In semiconductor equipment manufacturing process, particularly in multilayer wired formation operation, interlayer dielectric is important with the technology of imbedding the planarization of distribution.Promptly, make the distribution multiple stratification along with the miniaturization densification of semiconductor manufacturing process, the concavo-convex easy increase of each laminar surface surpasses the problems such as the depth of focus of photoetching (lithography) for preventing this step-like distortion, and the high planarization in the multilayer wired formation operation becomes important.
As wiring material, because of Cu has low resistivity of more used Al alloy and excellent anti-electromigration, so be subjected to attracting attention of people.Cu forces down because of the steam of its chloride gas, in the past reactive ion-etching (the RIE that always adopts; Reactive Ion Etching) is difficult to be processed into the distribution shape, so when distribution forms, adopt damascene (Damascene).It is to form recesses such as groove structure that distribution uses and passage on dielectric film, after forming barrier film again, utilize film forming such as sputtering method or galvanoplastic Cu is imbedded slot part, after this utilize polishing (the CMP:Chemical Mechanical Polishing of the machinery of chemistry, hereinafter referred to as CMP) remove unnecessary Cu and barrier film so that the dielectric film beyond the recess is surface exposed, make the method for flattening surface.In recent years, be main flow to form the dual damascene process (Dual Damascene) that Cu is embedded in the Cu distribution and the channel part of such recess simultaneously.
When so imbedding the formation of Cu distribution,, formed by tantalum compounds such as Ta, tantalum alloy or tantalum nitrides and formed barrier film for preventing the diffusion of Cu in dielectric film.Thus, must utilize CMP will imbed Cu distribution part barrier film in addition, that expose removes.But because of more very hard of barrier film and Cu, so in most cases can not obtain sufficient grinding rate.Thus, people propose as shown in Figure 1 by the 1st grinding step of removing the distribution metal film and remove the 2 stage polishings that the 2nd grinding step of barrier film constitutes.
Fig. 1 shows the sectional view that forms the method for imbedding distribution by CMP.(a) be before grinding, (b) for after the 1st grinding step end of removing distribution metal film 4, after (c) the 2nd grinding step end of barrier film 3 is removed in demonstration.Shown in Fig. 1 (a), on Si substrate 1, form dielectric film 2, this film is to form for groove that distribution 5 usefulness are imbedded in formation, on this film, form barrier film 3, on barrier film 3, form distribution metal film 4 (Cu films) again, utilize the 1st grinding step to remove distribution metal film 4 and utilize the 2nd grinding step to remove barrier film 3.
But adopt the CMP of grinding agent in the past, then exist the depression (dishing) of imbedding Cu distribution 5 to increase and wear away the problem of (erosion) increase.Here said depression is meant distribution metal film incidental on the wiring part of amplitude broad, wiring part as shown in Figure 24 over-lappings, and central portion is in the state of depression.Abrasion are meant in that intensive wiring part is incidental and compare with the low density part of distribution as shown in Figure 3, dielectric film 2 over-lappings of intensive wiring part and the phenomenon of dielectric film 2 attenuation that exist.In Fig. 2 and Fig. 3, omitted barrier film 3.
With in the past grinding agent the time, because of the grinding rate of barrier film 3 much smaller than the grinding rate of distribution metal film 4, so when removing barrier film 3, the Cu over-lapping of wiring part and bigger depression takes place.In addition, compare with the low density part of distribution, the barrier film 3 that is added in the high density wiring part with its under dielectric film 2 on grinding pressure relative higher, for this reason, the grinding rate of the 2nd grinding step can differ bigger because of the difference of distribution density, consequently big abrasion take place in dielectric film 2 over-lappings of highdensity wiring part.If depression and abrasion take place, wiring resistance can increase or electromigration takes place easily, the problem that exists equipment dependability to reduce.
Ta and tantalum compound as barrier film are difficult because of chemical etching, and hardness is also than the Cu height, so also be not easy to be removed even utilize mechanicalness to grind.For improving grinding rate hardness of grain is strengthened, can produce cut on the soft Cu distribution, the problem of the bad grade of energising takes place easily.In addition, if wear particle concentration is high, because of the grinding rate of dielectric film also accelerates simultaneously, so big abrasion can take place.Moreover, be difficult to keep the dispersity of the abrasive particle in the grinding agent, produce the problem of the dispersion stabilization of precipitation and gelation etc. by the time.
In CMP, must prevent because of the caused corrosion of grinding agent to Cu.People are known in the corrosion inhibitor to Cu and copper alloy, (can step on Gu Wuji " corrosion of benzotriazole inhibitor suppresses mechanism " as have BTA (hereinafter referred to as BTA) and the derivative thereof that are widely used the most effectively, Japan antirust technology association, 1986, P.1).BTA suppresses redox reaction as being added on additive in the grinding agent to form the compact surfaces film on the surface of Cu and copper alloy, prevents etching and prevents that the depression of Cu wiring part from being effective.
For example, the open flat 8-83780 of communique of Japan special permission discloses and has contained the BTA or derivatives thereof prevent that to form diaphragm on the surface of Cu depression from producing in grinding agent.But utilize this method, it is very difficult that the BTA of the solubility in water of sufficient amount low (25 ℃ solubility is 1.98 weight %) is added in the grinding agent, and when addition increases, the dispersion balance of the grinding agent of abrasive particle dispersion liquid is damaged, easily through the time precipitation of abrasive particle takes place, produce the low problem that waits of storage stability of grinding agent.
As the grinding agent that makes the metal film planarization, the open flat 10-74764 of communique of Japan's special permission discloses the acid slurries of oxidation that contain as the colloidal aluminium oxide of abrasive particle.But this method is effectively to the situation of grinding as the Nb of barrier film, forming when adopting Ta or its alloy as the Cu distribution of barrier film, grinding rate or finish after the flatness of distribution be not enough.
The open flat 11-21546 of communique of Japan's special permission discloses the grinding agent that is made of the slurries that contain metal oxide abrasive particle, urea and hydrogen peroxide such as cerium oxide, aluminium oxide, silicon dioxide, titanium dioxide, zirconia.And this grinding agent is much smaller than the grinding rate of Cu distribution to the grinding rate of barrier film, has the problems such as poor stability that depression or slurries take place easily.
Summary of the invention
Thus, when the purpose of this invention is to provide grinding and on dielectric film, having formed the substrate of distribution metal film and barrier film, have high grinding rate and can suppress depression or the generation of abrasion, can form grinding agent wiring part, that abrasive metal is used of imbedding that cut is few, reliability is high, electrical characteristics are excellent, it be by the slurries that abrasive particle is disperseed constitute, through the time be difficult to produce the grinding agent that precipitation or gelation etc. have enough stability.
The invention provides the manufacture method of a kind of grinding agent and this grinding agent, the grinding agent that this grinding agent is used for the cmp that grinds substrate is characterized in that, contains following (A), (B), (C), (D) and (E),
(A) oxide fine particle,
(B) oxidant,
(C) compound shown in the formula (1),
(D) water,
(E) be selected from the primary alconol that carbon number is 1-4, the glycol that carbon number is 2-4, the ether shown in the formula 2, N-N-methyl-2-2-pyrrolidone N-, N, in dinethylformamide, dimethyl sulfoxide (DMSO), gamma-butyrolacton and the propylene carbonate more than a kind,
Figure C0282072400081
Formula 1
CH 3CH (OH) CH 2OC mH 2m+1 Formula 2
R is that hydrogen atom, carbon number are the alkyl of 1-4, alkoxyl or the carboxyl that carbon number is 1-4 in the formula; M is the integer of 1-4.
The present invention also provides a kind of Ginding process, it is that grinding agent is supplied with grinding pad on the grinding plate, make it and contacted by abradant surface, make by abradant surface and grinding pad relative motion and carry out abrasive method, it is characterized in that, adopt above-mentioned grinding agent to grind the substrate that is formed with distribution metal film and barrier film.
Description of drawings
Fig. 1 shows the operation sectional view that forms the method for imbedding distribution by CMP,
(a) for before grinding, (b) for after the 1st grinding step of removing the distribution metal film finishes, (c) for after the 2nd grinding step of removing barrier film finishes.
Fig. 2 is the sectional view of the forming process of demonstration depression,
(a) preceding for grinding, (b) is after grinding.
Fig. 3 is the sectional view that shows the abrasion forming process,
(a) for before grinding, (b) for after grinding.
Embodiment
Below, better embodiment of the present invention is described.Grinding agent of the present invention (hereinafter referred to as this grinding agent) is suitable as and grinds the CMP grinding agent that the distribution metal film be formed on the semiconductor substrate and barrier film are used.Be specially adapted in the following operation: utilize CMP to grind the barrier film that is formed with on the dielectric film of recess with tantalum compounds such as Ta, tantalum alloy or tantalum nitride formation having, be formed with the substrate of the distribution metal film of this recess of landfill, imbed the operation of electrical connection sections such as distribution or passage with formation.This grinding agent in 2 stage polishings of the grinding of grinding that is divided into the distribution metal film and barrier film, uses to expose in the 2nd grinding step that is carried out the back at barrier film to be particularly suitable for, and also can use in the 1st grinding step.
Composition in the grinding agent (A) (oxide fine particle) is for grinding abrasive particle, specifically, be preferably be selected from silicon dioxide, aluminium oxide, cerium oxide (ceria), zirconia (zircon), titanium dioxide (titanium soil), tin oxide, zinc oxide, germanium oxide and the manganese oxide more than a kind.As silicon dioxide, can use the prepared silicon dioxide of various known method.For example available silicon tetrachloride and oxygen are carried out the synthetic formed pyrogenic silica of gas phase, sodium metasilicate is carried out the colloidal silica that ion-exchange forms, the colloidal silica that the alkoxyl silicone liquid-phase hydrolysis forms in hydrogen flame.Equally, also can more handy colloidal alumina.Also can more handy liquid phase method or the prepared cerium oxide of vapor phase method, zirconia, titanium dioxide, tin oxide, zinc oxide.Wherein, the more handy colloidal silica that can make particle diameter homogeneous high purity degree product.
The average grain diameter of composition (A), the angle from abrasive characteristic and dispersion stabilization is preferably 5-500nm, more preferably 10-300nm.The concentration of the composition in this grinding agent (A) is considered from grinding rate, uniformity, material selectivity, dispersion stabilization equal angles in the scope of the 0.5-20% of grinding agent gross mass, better is suitably to set.
Composition (B) (oxidant) is to be used for forming the oxidized surface film on the barrier film surface, removes the grinding that the oxidized surface film promotes barrier film by mechanical power from substrate surface.As composition (B), more handy be selected from hydrogen peroxide, iodate, periodate, hypochlorite, perchlorate, persulfate, percarbonate, perborate and the perphosphate more than a kind.As iodate, periodate, hypochlorite, perchlorate, persulfate, percarbonate, perborate and perphosphate, alkali metal salts such as available ammonium salt, sylvite.Wherein, more handy alkali-free metal ingredient, do not generate the hydrogen peroxide of harmful side product.
The concentration of the composition in this grinding agent (B) is considered from the angle of the abundant effect that obtains grinding promotion, in the scope of the 0.5-20% of grinding agent gross mass, considers the uniformity of grinding rate, grinding agent slurries etc. more fortunately, suitably sets.
Composition (C) is for having the material that forms the performance of the diaphragm that prevents distribution metal part depression in the distribution metal surface.When the distribution metal is made of Cu, so long as form the material that skin covering of the surface suppresses the stripping of Cu on the Cu surface by physical absorption or chemisorbed, but the compound shown in the enumerative 1.In the formula 1, R is that hydrogen atom, carbon number are the alkyl of 1-4, alkoxyl or the carboxyl that carbon number is 1-4,
Figure C0282072400091
Formula 1
BTA-4-carboxylic acid that a H atom of 4 or 5 of the phenyl ring of concrete available BTA, BTA is substituted by tolyl-triazole (TTA) that methyl forms, form with carboxyl substituted etc.These can use separately, also can will share more than 2 kinds.Consider that from the angle of abrasive characteristic the content of composition (C) is preferably the 0.001-5% of grinding agent gross mass, more preferably 0.002-0.5%.
In this grinding agent, the composition of abrasive particle (A) mainly is scattered in the water (components D), but composition (C) is lower to the solubility of water, directly mixes with water or with the dispersion liquid that composition (A) is scattered in the water, and the dispersion stabilization of grinding agent reduces easily.Thus, in the manufacture method of grinding agent of the present invention, be scattered in before dispersion liquid in the water mixes with composition (A), better with composition (C) but after being dissolved in the organic solvent that high concentration dissolves and above-mentioned dispersion liquid mix.The present invention adopts composition (E) as above-mentioned organic solvent.For example under the situation of BTA, be 1.98 weight % with respect to the solubility of water, methyl alcohol is that 71.6 weight %, isopropyl alcohol (hereinafter referred to as IPA) they are that 53.9 weight %, ethylene glycol are 50.7 weight % (all at 25 ℃).After being dissolved in composition (C) in the composition (E) in advance, add in the dispersion liquid that is dispersed with composition (A), stably make grinding agent to prevent the spot segregation in the manufacturing process.
Composition (E) is to be selected from the primary alconol that carbon number is 1-4, glycol, the CH that carbon number is 2-4 3CH (OH) CH 2OC mH 2m+1Ether shown in (formula 2) (m is an integer 1～4), N-N-methyl-2-2-pyrrolidone N-, N, in dinethylformamide, dimethyl sulfoxide (DMSO), gamma-butyrolacton and the propylene carbonate more than a kind.Specifically, as primary alconol, more handy methyl alcohol, ethanol and IPA.
As glycol, better spent glycol (hereinafter referred to as EG), propylene glycol (hereinafter referred to as PG).As ether, more handy methyl proxitol (hereinafter referred to as PGM), propylene glycol ethylether (hereinafter referred to as PGE).
N-N-methyl-2-2-pyrrolidone N-, N, dinethylformamide, dimethyl sulfoxide (DMSO), gamma-butyrolacton and propylene carbonate are the polar solvents in the scope of dielectric constant at 30-65 in the time of 25 ℃, but can be by solvation high concentration ground dissolving electrolyte.That is, these solvents can make the solution of high concentration solvent components (C), even utilize the manufacturing process that adds above-mentioned solution in mentioned component (A) is scattered in dispersion liquid in the water, also are effective.
Composition (E) has the function of this grinding agent of control flowability.At the grinding pad of grinding agent being supplied with on the grinding plate, make it and contacted by abradant surface, make by abradant surface and grinding pad relative motion and carry out in the abrasive method, grinding agent being provided and effectively discharging smear metal between by abradant surface and grinding pad effectively is outbalance.For example, when the surface tension height of grinding agent or viscosity were high, if can not effective supply and discharge, grinding rate also can reduce.Because of in this grinding agent, containing the high water of surface tension (components D), so need to adjust its mobile composition (E).
In mentioned component (E), particularly be selected from methyl alcohol, ethanol, ethylene glycol and the N-N-methyl-2-2-pyrrolidone N-more than a kind, from the dispersion stabilization of abrasive characteristic and abrasive composition, comparatively desirable.
From the angle of abrasive characteristic and dispersion stabilization, the content of composition (E) is preferably 0.01-50%, more preferably 0.5-30% with respect to the grinding agent gross mass.
The water of composition (D) better accounts for the 40-98% of this grinding agent gross mass in this grinding agent, particularly preferably 60-90%.As mentioned above, glassware for drinking water has and composition (E) is controlled the function of the flowability of this grinding agent together, thus the content of water can grinding rate and planarization characteristics etc. be target, in conjunction with abrasive characteristic, suitably set.
Contain oxide fine particle in this grinding agent as composition (A).Have surface hydroxyl on the oxide fine particle, usually particle diameter becomes more little, and its activity is high more, be prone to aggegation or gelation more and produced through the time change.The present inventor finds can be by containing aggegation and the gelation that composition (E) suppresses grinding agent, the initial abrasive characteristic of long term maintenance grinding agent.By adopting the grinding agent of long term maintenance stably dispersing state, the grinding rate that can keep barrier film reduces depression and abrasion on high-speed level, and form that cut is few, reliability is high, the electrical characteristics excellence imbed wiring part.
In this grinding agent, except containing composition (A)-(E), can also contain acid.As acid, more handy be selected from nitric acid, sulfuric acid and the carboxylic acid more than a kind.Wherein, better use oxyacid, the not halogen-containing nitric acid that oxidability is arranged.In addition, the concentration of the acid in this grinding agent is preferably the 0.01-20% of grinding agent gross mass.
Moreover, for the regulation pH that adjusts this grinding agent and acid together, can also in this grinding agent, add alkali compounds.As this alkali compounds, available quaternary ammonium hydroxide as ammonia, potassium hydroxide, tetramethyl ammonium hydroxide, tetraethyl ammonium hydroxide (hereinafter referred to as TEAH) and so on etc.When wishing the alkali-free metal, be fit to use ammonia.
If consider the abrasive characteristic and the dispersion stabilization of grinding agent, better the pH with this grinding agent is controlled in the scope of 3-9.When using silicon dioxide as abrasive particle, pH is preferably 3-5 or pH is 7-9 especially.If in the scope of above-mentioned pH, the silicon dioxide in the grinding agent is stable.Select any pH, can according to as the selection of the grinding rate of Cu, dielectric film and the Ta of target than using respectively.
In order to adjust pH, can in grinding agent, use the pH buffer.As this pH buffer, available common material with pH buffer capacity, but in more handy butanedioic acid, citric acid, oxalic acid, phthalic acid, tartaric acid and the adipic acid that is selected from polybasic carboxylic acid more than a kind.Can also be with glycylglycine or carbonic acid alkali metal salt.When the distribution metal is Cu, consider that the grinding rate that suppresses Cu prevents to cave in, complexing coefficient more handy and Cu is not so good as citric acid high butanedioic acid like that.In addition, the concentration of the pH buffer in this grinding agent is preferably the 0.01-10% of grinding agent gross mass.
Though this grinding agent be fit to grind by the distribution metal film and stops film formed substrate, grinding barrier film when being selected from the film that constitutes more than a kind in Ta, tantalum alloy or the tantalum compound, can obtain effect preferably especially.This grinding agent also be suitable for to grind the film that is made of other metal etc., adopting by the metal beyond the Ta or metallic compound as barrier film, for example Ti, TiN, TiSiN, WN etc. constitute film the time, also can obtain same effect.
This grinding agent the distribution metal film be selected from the compound of Cu, copper alloy and copper more than a kind the time, can obtain better effects, adopt Cu metal in addition to constitute metal film, for example, when Al, W, Ag, Pt, Au etc. constitute metal film, also can obtain same effect.As the dielectric film of aforesaid substrate, the film that the advanced low-k materials such as silicon dioxide of the film that available silicon dioxide or SiOF constitute, organic SOG (film that contains the organic principle that is got by Spin on glass), porous constitute.
Ginding process of the present invention is with the grinding pad on the above-mentioned grinding agent supply grinding plate, make it and contacted by abradant surface, make by abradant surface and grinding pad relative motion and carry out abrasive method, as required, the surface of grinding pad adjuster and grinding pad is contacted, carry out the adjusting on grinding pad surface, grind simultaneously.
This grinding agent is suitable in the following method: recesses such as groove structure that the formation distribution is used on dielectric film and passage, after then forming barrier film, utilizing film forming such as sputtering method or galvanoplastic and Cu is being imbedded on the substrate of slot part, remove Cu and barrier film so that the dielectric film beyond the recess is surface exposed by CMP, imbed the method for metal wiring with formation.That is, in the grinding step in 2 stages as shown in Figure 1, use the 2nd grinding step till the state from Fig. 1 (b) is ground to the state of Fig. 1 (c), depression and abrasion are difficult to form, and are comparatively suitable.
Below, by embodiment (routine 1-11,14-19,22-24) and comparative example (example 12,13,20,21) the present invention is specified more, but the present invention is not subjected to the restriction of these examples.
(preparation of grinding agent)
In pure water, add acid, alkali and pH buffer, stir and make a solution after 10 minutes.Below composition (C) is dissolved in the organic solvent (composition (E)) and makes b solution.After adding to b solution in a solution, stirred again 10 minutes and make c solution.
Then, slowly add to the dispersion liquid of oxide fine particle (composition (A)) in the c solution after, slowly add alkali compounds to adjust pH.Add the aqueous solution of oxidant again and stirred 30 minutes and make grinding agent.Kind, its concentration to the grinding agent gross mass (%) and the pH of grinding agent with each routine employed composition (C), composition (E) and composition (A) is illustrated in the table 1 respectively, and respectively kind and its concentration to the grinding agent gross mass of used oxidant, acid, alkali and pH buffer is illustrated in the table 2.
(grinding condition)
Grinding is to carry out under following device and condition.
Grinder: full-automatic CMP device MIRRA (manufacturing of APPLIED MATERIALS company) grinding pressure: 20kPa, revolution: press nog plate (platform) 103rpm, pad (substrate maintaining part) 97rpm, grinder feed speed: 200mL/ minute, grinding pad: IC1000 (manufacturing of ロ デ one Le company).
(grinding charge)
(coating thin slice)
(1) CU (distribution metal film) grinding rate evaluation thin slice: utilize galvanoplastic on substrate, to form the Cu layer of thickness 1500nm and 8 inches thin slices of film forming.
(2) Ta (barrier film) grinding rate evaluation thin slice: utilize sputtering method on substrate, to form the Ta layer of thickness 200nm and 8 inches thin slices of film forming.
(3) SiO 2(dielectric film) grinding rate evaluation thin slice: utilize plasma CVD on substrate, to form the SiO of thickness 800nm 2Layer and 8 inches thin slices of film forming ((1)-(3) are all made by Sematech company).
(pattern thin slice)
To formed dielectric film on the substrate, form the Wiring pattern of distribution density 50%, distribution fabric width 5 μ m and 50 μ m, be formed with on the dielectric film of this Wiring pattern, utilize sputtering method to form the Ta layer of thickness 25nm and film forming, utilize galvanoplastic to form the Cu layer of thickness 1500nm and 8 inches thin slices (trade name: 831CMP000 is made by Sematech company) of film forming more thereon.
(evaluating characteristics of grinding agent)
To the evaluation of the grinding rate that grinds distribution metal film, barrier film and dielectric film, used the coating thin slice respectively, and, used the pattern thin slice the evaluation of depression, abrasion.In the grinding of pattern thin slice, utilized the Ginding process in 2 stages that constitute by the 1st grinding step of removing the distribution metal film and the 2nd grinding step of removing barrier film.As the grinding agent that the 1st grinding step is used, used the grinding agent that constitutes by aluminium oxide, hydrogen peroxide, citric acid, ammonium polyacrylate and water, they are respectively 3%, 4%, 0.1%, 0.05% and 92.85 for the grinding agent gross mass.All use above-mentioned grinding agent in the 1st grinding step of embodiment and comparative example.
In the stage that Ta behind the 1st grinding step on the dielectric film exposes, the depression of the position of distribution fabric width 5 μ m is 40nm, and the depression of the position of distribution fabric width 50 μ m is 60nm, and what all are 0nm to wear away the distribution fabric width.After this, each the routine grinding agent all formed shown in the use table 1 and table 2 that disappears of the Ta on dielectric film is implemented the 2nd grinding step.
To abrasive characteristic, utilize following method to estimate.Grinding rate can be calculated from the thickness before and after grinding.When measuring thickness, at Cu and Ta, adopt by four probe method measured sheet resistance and the electrical sheet resistance determinator RS75 (manufacturing of KLA テ Application コ one Le company) that calculates; At dielectric film, adopt light interference type full-automatic determining film thickness device UV 1280SE (manufacturing of KLA テ Application コ one Le company).At the planarization characteristics of depression and abrasion, adopt contact pin type to measure the high definition Block ロ Off ア イ ラ HRP100 (manufacturing of KLA テ Application コ one Le company) of the step discrepancy in elevation.
At the dispersion stabilization of grinding agent, by prepare just intact and 1 month after the variation of average grain diameter estimate.Average grain diameter utilizes micro-track (microtrack) UPA (a day machine dress company makes) to measure.Being increased in of average grain diameter 50% is expressed as zero with interior, than its bigger being expressed as *.
Cu, Ta, SiO have been displayed in Table 3 2The grinding rate (unit is the nm/ branch) of each film, being displayed in Table 4 the step that depression and abrasion cause respectively is the dispersion stabilization of the discrepancy in elevation (unit is nm) and grinding agent.
Table 1
Composition (C) Composition (E) pH Composition (A)
Material Concentration Material Concentration Material Concentration
Example 1 BTA 1.0 Methyl alcohol 20 7.0 Silicon dioxide 10
Example 2 BTA 0.2 Ethanol 20 4.0 Silicon dioxide 4
Example 3 BTA 0.2 IPA 5 4.0 Silicon dioxide 4
Example 4 BTA 0.2 EG 5 4.0 Silicon dioxide 4
Example 5 TTA 0.2 PG 5 3.0 Silicon dioxide 4
Example 6 TTA 0.2 PGM 0.1 3.0 Silicon dioxide 4
Example 7 TTA 0.2 PGE 0.1 3.0 Silicon dioxide 4
Example 8 BTA 0.5 EG 5 4.0 Aluminium oxide 4
Example 9 BTA 0.01 EG 5 4.0 Ceria 4
Example 10 BTA 0.01 EG 5 4.0 Titanium soil 4
Example 11 BTA 0.05 EG 5 4.0 Zirconia 4
Example 12 Do not have - Methyl alcohol 10 9.0 Aluminium oxide 4
Example 13 BTA 0.1 Do not have - 4.0 Silicon dioxide 4
Example 14 BTA 1.0 NMP 20 7.0 Silicon dioxide 10
Example 15 BTA 0.2 NMP 20 4.0 Aluminium oxide 4
Example 16 BTA 0.2 DMFA 20 4.0 Silicon dioxide 4
Example 17 BTA 0.2 DMSO 5 4.0 Silicon dioxide 4
Example 18 TTA 0.2 BL 5 3.0 Silicon dioxide 4
Example 19 TTA 0.2 PC 5 3.0 Silicon dioxide 4
Example 20 Do not have 0 Do not have 0 3.0 Silicon dioxide 4
Example 21 BTA 0.1 Do not have 0 4.0 Silicon dioxide 4
Example 22 BTA 0.005 EG 1 8.0 Silicon dioxide 4
Example 23 BTA 0.005 NMP 1 8.0 Silicon dioxide 4
Example 24 BTA 0.001 NMP 1 9.0 Silicon dioxide 4
Table 2
Composition (B) Acid Alkali The pH buffer
Material Concentration Material Concentration Material Concentration Material Concentration
Example 1 Hydrogen peroxide 5 Nitric acid 1 Ammonia 0.5 Butanedioic acid 0.2
Example 2 Hydrogen peroxide 5 Nitric acid 1 Ammonia 0.5 Butanedioic acid 0.2
Example 3 Hydrogen peroxide 5 Nitric acid 1 Ammonia 0.5 Butanedioic acid 0.2
Example 4 Hydrogen peroxide 5 Nitric acid 1 Ammonia 0.5 Butanedioic acid 0.2
Example 5 Hydrogen peroxide 5 Nitric acid 1 Ammonia 0.5 Butanedioic acid 0.2
Example 6 Hydrogen peroxide 5 Nitric acid 1 Ammonia 0.5 Butanedioic acid 0.2
Example 7 Hydrogen peroxide 5 Nitric acid 1 Ammonia 0.5 Butanedioic acid 0.2
Example 8 Hydrogen peroxide 5 Nitric acid 1 Ammonia 0.5 Butanedioic acid 0.2
Example 9 Hydrogen peroxide 5 Nitric acid 1 Ammonia 0.5 Citric acid 0.2
Example 10 Hydrogen peroxide 5 Nitric acid 1 Ammonia 0.5 Tartaric acid 0.2
Example 11 Ammonium persulfate 5 Sulfuric acid 1 TEAH 0.5 Glycylglycine 0.2
Example 12 Hydrogen peroxide 5 Nitric acid 0.5 KOH 0.5 Butanedioic acid 0.2
Example 13 Ammonium persulfate 1 Nitric acid 1 Ammonia 0.3 Citric acid 0.2
Example 14 Hydrogen peroxide 5 Nitric acid 1 Ammonia 0.5 Butanedioic acid 0.2
Example 15 Hydrogen peroxide 5 Nitric acid 1 Ammonia 0.5 Butanedioic acid 0.2
Example 16 Hydrogen peroxide 5 Nitric acid 1 Ammonia 0.5 Butanedioic acid 0.2
Example 17 Hydrogen peroxide 5 Nitric acid 1 Ammonia 0.5 Butanedioic acid 0.2
Example 18 Hydrogen peroxide 5 Nitric acid 1 Ammonia 0.5 Butanedioic acid 0.2
Example 19 Hydrogen peroxide 5 Nitric acid 1 Ammonia 0.5 Butanedioic acid 0.2
Example 20 Hydrogen peroxide 5 Nitric acid 0.5 KOH 0.5 Butanedioic acid 0.2
Example 21 Hydrogen peroxide 5 Nitric acid 1 Ammonia 0.3 Butanedioic acid 0.2
Example 22 Hydrogen peroxide 1 Nitric acid 1 KOH 1.5 Citric acid 0.2
Example 23 Hydrogen peroxide 1 Nitric acid 1 KOH 1.5 Citric acid 0.2
Example 24 Hydrogen peroxide 1 Nitric acid 1 KOH 1.5 Citric acid 0.2
Table 3
The Cu grinding rate The Ta grinding rate SiO 2Grinding rate
Example 1 The 80nm/ branch The 160nm/ branch The 15nm/ branch
Example 2 50 120 10
Example 3 60 120 10
Example 4 40 110 10
Example 5 50 110 10
Example 6 30 120 10
Example 7 40 120 5
Example 8 20 100 5
Example 9 30 100 5
Example 10 30 100 5
Example 11 30 100 5
Example 12 150 50 50
Example 13 50 30 40
Example 14 30 120 10
Example 15 50 110 10
Example 16 60 110 10
Example 17 40 110 10
Example 18 50 110 10
Example 19 30 110 10
Example 20 180 40 50
Example 21 50 30 40
Example 22 40 100 80
Example 23 40 100 80
Example 24 30 100 80
Table 4
Depression Abrasion Dispersion stabilization
50μm 50μm 50μm 50μm
Example 1 20 80 60 20 ○
Example 2 10 40 40 10 ○
Example 3 15 40 40 10 ○
Example 4 20 40 40 15 ○
Example 5 20 40 40 15 ○
Example 6 20 50 40 20 ○
Example 7 15 50 40 20 ○
Example 8 15 60 50 15 ○
Example 9 15 60 50 15 ○
Example 10 15 60 50 15 ○
Example 11 15 60 50 15 ○
Example 12 50 150 150 100 ○
Example 13 50 100 100 50 ×
Example 14 10 30 50 20 ○
Example 15 10 40 40 10 ○
Example 16 15 40 40 10 ○
Example 17 20 40 40 15 ○
Example 18 20 40 40 15 ○
Example 19 20 50 40 20 ○
Example 20 60 180 160 100 ×
Example 21 60 110 50 50 ×
Example 22 20 30 30 10 ○
Example 23 20 30 30 10 ○
Example 24 20 40 40 20 ○
The possibility of using on the industry
If adopt grinding agent of the present invention to grind when dielectric film has formed the substrate of distribution metal film and barrier film, grinding rate that then can be high, suppress depression and abrasion the spot, form the wiring part of imbedding that cut is few, reliability is high, electrical characteristics are excellent. Grinding agent of the present invention be difficult to occur through the time precipitation and gelation etc., dispersion stabilization is excellence also.

Claims (15)

1. grinding agent, it is the grinding agent of using for the cmp that grinds substrate, it is characterized in that, contains following (A), (B), (C), (D), (E), (F), (G) and (H),
(A) oxide fine particle,
(B) oxidant,
(C) compound shown in the formula (1),
(D) water,
(E) be selected from the primary alconol that carbon number is 1-4, the glycol that carbon number is 2-4, the ether shown in the formula 2, N-N-methyl-2-2-pyrrolidone N-, N, in dinethylformamide, dimethyl sulfoxide (DMSO), gamma-butyrolacton and the propylene carbonate more than a kind,
(F) be selected from more than one acid of nitric acid and sulfuric acid,
(G) be selected from the pH buffer more than a kind of butanedioic acid, citric acid, oxalic acid, phthalic acid, tartaric acid, adipic acid, glycylglycine and carbonic acid alkali metal salt,
(H) alkali compounds,
Formula 1
CH 3CH (OH) CH 2OC mH 2m+1Formula 2
R is that hydrogen atom, carbon number are the alkyl of 1-4, alkoxyl or the carboxyl that carbon number is 1-4 in the formula; M is the integer of 1-4.
2. grinding agent according to claim 1 is characterized in that, pH is 2-9.
3. grinding agent according to claim 1 and 2 is characterized in that, above-mentioned (A) for be selected from silicon dioxide, aluminium oxide, cerium oxide, zirconia, titanium dioxide, tin oxide, germanium oxide, zinc oxide and the manganese oxide more than a kind.
4. grinding agent according to claim 1 is characterized in that, described (A) is silicon dioxide.
5. grinding agent according to claim 1 is characterized in that, described (A) is colloidal silica.
6. grinding agent according to claim 1 is characterized in that described (A) accounts for the 0.5-20% of grinding agent gross mass.
7. grinding agent according to claim 1 is characterized in that, described (C) represents that for being selected from R in the formula 1 hydrogen atom or carbon number are at least a in the compound of 1 alkyl.
8. grinding agent according to claim 1, it is characterized in that, above-mentioned (E) for being selected from methyl alcohol, ethanol, isopropyl alcohol, ethylene glycol, propylene glycol, methyl proxitol, propylene glycol ethylether, N-N-methyl-2-2-pyrrolidone N-, N, in dinethylformamide, dimethyl sulfoxide (DMSO), gamma-butyrolacton and the propylene carbonate more than a kind.
9. grinding agent according to claim 1 is characterized in that, with respect to the gross mass of grinding agent, contains above-mentioned (E) of 0.01-50 quality %; Above-mentioned (C) that contains 0.001-5 quality %.
10. grinding agent according to claim 1 is characterized in that, described (F) and (G) account for the 0.01-20% and the 0.01-10% of grinding agent gross mass respectively.
11. grinding agent according to claim 10 is characterized in that, described (H) is for being selected from potassium hydroxide, ammonia, tetraethyl ammonium hydroxide, the tetramethyl ammonium hydroxide more than one.
12. grinding agent according to claim 1 is characterized in that, pH is 2-5 or 7-9.
13. the manufacture method of a grinding agent, it is to contain (A) oxide fine particle, (B) oxidant, (C) compound shown in the formula 1, (D) water and (E) be selected from the primary alconol that carbon number is 1-4, carbon number is the glycol of 2-4, ether shown in the formula 2, the N-N-methyl-2-2-pyrrolidone N-, N, dinethylformamide, dimethyl sulfoxide (DMSO), the organic solvent more than a kind in gamma-butyrolacton and the propylene carbonate, use the manufacture method of grinding agent for the cmp that grinds substrate, it is characterized in that, after being dissolved in above-mentioned (E) with above-mentioned (C), mix with the dispersion liquid that above-mentioned (A) is scattered in the water
Formula 1
In the formula, R is that hydrogen atom, carbon number are the alkyl of 1-4, alkoxyl or the carboxyl that carbon number is 1-4;
CH 3CH (OH) CH 2OC mH 2m+1Formula 2
M is the integer of 1-4.
14. Ginding process, it is that grinding agent is supplied with grinding pad on the grinding plate, make it and contacted by abradant surface, make by abradant surface and grinding pad relative motion and carry out abrasive method, it is characterized in that, adopt the described grinding agent of claim 1 to grind the substrate that is formed with distribution metal film and barrier film.
15. Ginding process according to claim 14 is characterized in that, above-mentioned barrier film is made of tantalum, tantalum alloy or tantalum compound; Above-mentioned distribution metal film is made of copper, copper alloy or copper compound.
CNB028207246A 2001-10-26 2002-10-23 Polishing compound, method for production thereof, and polishing method Expired - Fee Related CN1306562C (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2001329148 2001-10-26
JP329148/2001 2001-10-26
JP2001353207 2001-11-19
JP353207/2001 2001-11-19
PCT/JP2002/010996 WO2003036705A1 (en) 2001-10-26 2002-10-23 Polishing compound, method for production thereof and polishing method

Publications (2)

Publication Number Publication Date
CN1572017A CN1572017A (en) 2005-01-26
CN1306562C true CN1306562C (en) 2007-03-21

Family

ID=26624134

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB028207246A Expired - Fee Related CN1306562C (en) 2001-10-26 2002-10-23 Polishing compound, method for production thereof, and polishing method

Country Status (9)

Country Link
US (1) US7854777B2 (en)
EP (1) EP1445796B1 (en)
JP (2) JP4576117B2 (en)
KR (2) KR100939472B1 (en)
CN (1) CN1306562C (en)
AT (1) ATE386786T1 (en)
DE (1) DE60225171T2 (en)
TW (1) TWI231821B (en)
WO (1) WO2003036705A1 (en)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1150341A4 (en) * 1998-12-28 2005-06-08 Hitachi Chemical Co Ltd Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same
KR100704690B1 (en) 2001-10-31 2007-04-10 히다치 가세고교 가부시끼가이샤 Polishing fluid and polishing method
US20100009540A1 (en) * 2002-09-25 2010-01-14 Asahi Glass Company Limited Polishing compound, its production process and polishing method
EP1544901B1 (en) * 2002-09-25 2009-12-16 Seimi Chemical Co., Ltd. Polishing compound composition and polishing method
WO2004101222A2 (en) * 2003-05-12 2004-11-25 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for step-ii copper liner and other associated materials and method of using same
US7153335B2 (en) * 2003-10-10 2006-12-26 Dupont Air Products Nanomaterials Llc Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole
JP2005294798A (en) * 2004-03-08 2005-10-20 Asahi Glass Co Ltd Abrasive and polishing method
US7846349B2 (en) * 2004-12-22 2010-12-07 Applied Materials, Inc. Solution for the selective removal of metal from aluminum substrates
US7446046B2 (en) * 2005-01-06 2008-11-04 Intel Corporation Selective polish for fabricating electronic devices
US7467988B2 (en) * 2005-04-08 2008-12-23 Ferro Corporation Slurry composition and method for polishing organic polymer-based ophthalmic substrates
US7294044B2 (en) * 2005-04-08 2007-11-13 Ferro Corporation Slurry composition and method for polishing organic polymer-based ophthalmic substrates
US7452481B2 (en) * 2005-05-16 2008-11-18 Kabushiki Kaisha Kobe Seiko Sho Polishing slurry and method of reclaiming wafers
TWI271555B (en) * 2005-06-13 2007-01-21 Basf Ag Slurry composition for polishing color filter
US20080171441A1 (en) * 2005-06-28 2008-07-17 Asahi Glass Co., Ltd. Polishing compound and method for producing semiconductor integrated circuit device
CN101238192A (en) * 2005-08-04 2008-08-06 旭硝子株式会社 Polishing composition and polishing method
EP1930938A4 (en) * 2005-09-09 2010-03-24 Asahi Glass Co Ltd Polishing agent, method for polishing surface to be polished, and method for manufacturing semiconductor integrated circuit device
US20070068902A1 (en) * 2005-09-29 2007-03-29 Yasushi Matsunami Polishing composition and polishing method
US7763312B2 (en) * 2006-04-17 2010-07-27 Elantas Pdg, Inc. Dispersion of nano-alumina in a resin or solvent system
JP5725145B2 (en) * 2006-10-11 2015-05-27 日立化成株式会社 Polishing liquid for metal, manufacturing method thereof, and polishing method of film to be polished using metal polishing liquid
WO2009056491A1 (en) * 2007-10-29 2009-05-07 Basf Se Cmp slurry composition and process for planarizing copper containing surfaces provided with a diffusion barrier layer
WO2009096495A1 (en) 2008-02-01 2009-08-06 Fujimi Incorporated Polishing composition and polishing method using the same
FR2932108B1 (en) * 2008-06-10 2019-07-05 Soitec POLISHING GERMANIUM LAYERS
US8398779B2 (en) * 2009-03-02 2013-03-19 Applied Materials, Inc. Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates
US8551887B2 (en) 2009-12-22 2013-10-08 Air Products And Chemicals, Inc. Method for chemical mechanical planarization of a copper-containing substrate
SG184276A1 (en) * 2010-03-29 2012-11-29 Asahi Glass Co Ltd Polishing slurry, polishing method and manufacturing method of semiconductor integrated circuit device
TWI605112B (en) 2011-02-21 2017-11-11 Fujimi Inc Polishing composition
CN102925060B (en) * 2012-11-09 2014-03-26 济南大学 Preparation method of marble composite polishing powder
CN105658757B (en) * 2013-10-23 2019-02-19 东进世美肯株式会社 Metal film polishing slurries composition and the method for reducing the scratch generated when metal film polishes using it
JP6327746B2 (en) * 2014-03-31 2018-05-23 株式会社フジミインコーポレーテッド Polishing composition
CN104263249B (en) * 2014-09-26 2016-06-29 深圳市力合材料有限公司 A kind of processing method of Ludox
KR102298238B1 (en) * 2016-06-03 2021-09-06 후지필름 가부시키가이샤 Polishing liquid, and chemical mechanical polishing method
WO2018056122A1 (en) * 2016-09-21 2018-03-29 日立化成株式会社 Slurry and polishing method
CN109280492A (en) * 2017-07-21 2019-01-29 天津西美科技有限公司 A kind of inp wafer polishing fluid
US20190153262A1 (en) * 2017-11-20 2019-05-23 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced surface scratching
CN109746771B (en) * 2019-02-14 2020-11-20 南京航空航天大学 CsPbX3Polishing method of inorganic perovskite crystal material
US20220017781A1 (en) * 2020-07-20 2022-01-20 Cmc Materials, Inc. Silicon wafer polishing composition and method
CN112142630B (en) * 2020-10-28 2022-06-28 雅邦绿色过程与新材料研究院南京有限公司 Method for recovering dimethyl sulfoxide from semiconductor industrial waste liquid

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US589509A (en) * 1897-09-07 Electrical igniter for gas-engines
US5897375A (en) * 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
JP2001031950A (en) * 1999-07-19 2001-02-06 Tokuyama Corp Polishing agent for metallic film
JP2001185515A (en) * 1999-12-27 2001-07-06 Hitachi Ltd Polishing method, wire forming method, method for manufacturing semiconductor device and semiconductor integrated circuit device

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5700383A (en) * 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
JPH10166258A (en) * 1996-12-06 1998-06-23 Tadahiro Omi Abrasive material composition
JPH1140526A (en) * 1997-07-22 1999-02-12 Hitachi Ltd Wiring formation method and manufacture of semiconductor device
US6432828B2 (en) * 1998-03-18 2002-08-13 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
JP2002528903A (en) * 1998-10-23 2002-09-03 アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド Slurry system containing activator solution for chemical mechanical polishing
EP1150341A4 (en) * 1998-12-28 2005-06-08 Hitachi Chemical Co Ltd Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same
US6348076B1 (en) * 1999-10-08 2002-02-19 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
JP2001267273A (en) * 2000-01-11 2001-09-28 Sumitomo Chem Co Ltd Abrasive for metal, abrasive composition, and polishing method
TW572980B (en) * 2000-01-12 2004-01-21 Jsr Corp Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process
US6355075B1 (en) * 2000-02-11 2002-03-12 Fujimi Incorporated Polishing composition
JP2001269859A (en) * 2000-03-27 2001-10-02 Jsr Corp Aqueous dispersing element for polishing chemical machine
JP2002050595A (en) * 2000-08-04 2002-02-15 Hitachi Ltd Polishing method, wiring forming method and method for manufacturing semiconductor device
US6569349B1 (en) * 2000-10-23 2003-05-27 Applied Materials Inc. Additives to CMP slurry to polish dielectric films
US6623355B2 (en) * 2000-11-07 2003-09-23 Micell Technologies, Inc. Methods, apparatus and slurries for chemical mechanical planarization
US6740589B2 (en) * 2000-11-30 2004-05-25 Showa Denko Kabushiki Kaisha Composition for polishing semiconductor wafer, semiconductor circuit wafer, and method for producing the same
US20020104269A1 (en) * 2001-01-26 2002-08-08 Applied Materials, Inc. Photochemically enhanced chemical polish
SG144688A1 (en) * 2001-07-23 2008-08-28 Fujimi Inc Polishing composition and polishing method employing it
US6812193B2 (en) * 2001-08-31 2004-11-02 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
US6620215B2 (en) * 2001-12-21 2003-09-16 Dynea Canada, Ltd. Abrasive composition containing organic particles for chemical mechanical planarization
US20030168627A1 (en) * 2002-02-22 2003-09-11 Singh Rajiv K. Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US589509A (en) * 1897-09-07 Electrical igniter for gas-engines
US5897375A (en) * 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
JP2001031950A (en) * 1999-07-19 2001-02-06 Tokuyama Corp Polishing agent for metallic film
JP2001185515A (en) * 1999-12-27 2001-07-06 Hitachi Ltd Polishing method, wire forming method, method for manufacturing semiconductor device and semiconductor integrated circuit device

Also Published As

Publication number Publication date
ATE386786T1 (en) 2008-03-15
KR100952870B1 (en) 2010-04-13
JP4576117B2 (en) 2010-11-04
JPWO2003036705A1 (en) 2005-02-17
DE60225171D1 (en) 2008-04-03
US20040194392A1 (en) 2004-10-07
KR20100009581A (en) 2010-01-27
TWI231821B (en) 2005-05-01
US7854777B2 (en) 2010-12-21
KR20040052221A (en) 2004-06-22
EP1445796A1 (en) 2004-08-11
WO2003036705A1 (en) 2003-05-01
JP2010251778A (en) 2010-11-04
EP1445796B1 (en) 2008-02-20
KR100939472B1 (en) 2010-01-29
DE60225171T2 (en) 2008-06-05
EP1445796A4 (en) 2004-11-17
CN1572017A (en) 2005-01-26

Similar Documents

Publication Publication Date Title
CN1306562C (en) Polishing compound, method for production thereof, and polishing method
EP1152046B1 (en) Polishing composition and polishing method employing it
KR101330956B1 (en) Polishing solution for cmp and polishing method
KR101031446B1 (en) Method for chemical mechanical planarization of chalcogenide materials
TWI478227B (en) Method for chemical mechanical polishing of substrate
EP1909312A1 (en) Abrasive and process for producing semiconductor integrated-circuit unit
CN1660951A (en) Polishing composition and polishing method
KR20070001994A (en) Polishing agent and polishing method
JP2001247853A (en) Abrasive composition
CN1609156A (en) Composition for polishing semiconductor layers
KR20020015282A (en) Slurry for chemical mechanical polishing and method for manufacturing semiconductor device
CN1753962A (en) Modular barrier removal polishing slurry
WO2007029465A1 (en) Polishing agent, method for polishing surface to be polished, and method for manufacturing semiconductor integrated circuit device
KR20090023270A (en) Method for chemical mechanical planarization of chalcogenide materials
CN107109133B (en) Use of Chemical Mechanical Polishing (CMP) compositions for polishing substrates comprising cobalt and/or cobalt alloys
KR20100015627A (en) Polishing agent composition and method for manufacturing semiconductor integrated circuit device
WO2009064365A2 (en) Compositions and methods for ruthenium and tantalum barrier cmp
US20080171441A1 (en) Polishing compound and method for producing semiconductor integrated circuit device
JP2004055861A (en) Polishing agent and polishing method
CN1682354A (en) Polishing compound composition, method for producing same and polishing method
WO2009056491A1 (en) Cmp slurry composition and process for planarizing copper containing surfaces provided with a diffusion barrier layer
CN100468647C (en) Polishing agent and polishing method
JP4251395B2 (en) Slurry for polishing
JP2013165088A (en) Polishing agent and polishing method
CN1170909C (en) Chemical mechanical plane of metal wiring

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20070321

Termination date: 20151023

EXPY Termination of patent right or utility model