CN109280492A - A kind of inp wafer polishing fluid - Google Patents
A kind of inp wafer polishing fluid Download PDFInfo
- Publication number
- CN109280492A CN109280492A CN201710649155.1A CN201710649155A CN109280492A CN 109280492 A CN109280492 A CN 109280492A CN 201710649155 A CN201710649155 A CN 201710649155A CN 109280492 A CN109280492 A CN 109280492A
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- CN
- China
- Prior art keywords
- acid
- polishing fluid
- abrasive material
- inp wafer
- polishing
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Abstract
The invention discloses a kind of inp wafer polishing fluid, constituent is small particle abrasive material 6%-30%, acid PH stabilizer 1%-15%, antirust agent 0.001%-0.1%, fungicide 0.001-0.05%, and other compositions are ultrapure waters.It is characterized in that the evengranular small-grain-diametersilica silica sol that abrasive material selects our company's ion-exchange to produce is abrasive material, a kind of acid pH stabilizer is added, it is ensured that pH value is kept stable at 2-3 in production and polishing process.This polishing fluid can make inp wafer surface roughness < 0.3nm, because of its pH stable, it is therefore prevented that the lyogel of acid indium phosphide polishing, to improve the service life of polishing fluid.
Description
Technical field
The present invention relates to a kind of inp wafer polishing fluids, belong to the field chemically mechanical polishing (CMP).
Background technique
Indium phosphide crystal material itself has ideal electrical drift speed, stronger radiation resistance, excellent thermal conductivity
Can be equal, therefore be most promising one of semiconductor material after silicon wafer and GaAs.N type inp is used for photoelectric device
Such as light emitting diode, photoelectric communication, laser；P type inp is mainly used for high-efficient anti-radiation solar battery；Semi-insulating phosphorus
Changing indium can be used for making high frequency, high speed, broadband, low noise microwave, millimeter wave electronic device.
With the fast development of semiconductor industry, the research and application of semiconductor material have been pushed.At present both at home and abroad for
The increment study of indium phosphide crystal is relatively more, and indium phosphide is also extremely important applied to the abrasive polishing process before semiconductor substrate.
The polishing of inp wafer is the result that chemical attack and mechanical lapping act on simultaneously.Since inp wafer is than GaAs and silicon
The hardness of piece is low, and most of is twin polishing, all very high for the quality and consistency on two surfaces, so for polishing
The requirement of condition and polishing fluid is harsher.
At present about the research of indium phosphide polishing fluid there are no GaAs polishing fluid and silicon slice polishing liquid are so mature, and phosphorus
Change indium chip is relatively soft, and polishing process is easier mechanical damage and scuffing occur, therefore has for the research of indium phosphide polishing fluid
There is very important meaning.
Summary of the invention
The present invention provides a kind of inp wafer polishing fluid, in inp wafer chemically mechanical polishing.It to be solved
Technical problem is the mechanical damage and scuffing of chip, improves inp wafer surface quality.
It is phosphatization it is an object of the invention to overcome the shortcomings of to be currently used in the polishing fluid technology of preparing of inp wafer
Indium wafer polishing provides a kind of polishing fluid that indium phosphide can be improved and prohibit piece surface quality.
Technical solution of the present invention:
A kind of inp wafer polishing fluid, it is characterised in that: by small particle abrasive material, acid pH stabilizer, antirust agent, sterilization
Agent and ultrapure water composition.The above constituent mass degree are as follows: small particle abrasive material 6%-30%, pH stabilizer 1%-15%,
Antirust agent 0.001%-0.1%, fungicide 0.001%-0.05%, surplus are ultrapure water.Polishing fluid pH value is 2-3, is continuously made
With 5h, pH value is almost unchanged.
The evengranular small-grain-diametersilica silica sol that abrasive material of the present invention selects our company's ion-exchange to produce is abrasive material.
It is 6%-30% that abrasive material of the present invention, which accounts for entire polishing fluid mass percent,.
Acid pH stabilizer of the present invention is made of hydrochloric acid, inorganic acid, organic acid and weak base salt compounding, respectively at sub-prime
Measuring ratio is hydrochloric acid: organic acid: weak base salt=10: (1-5): (0.5-1).
Organic acid of the present invention is one or both of citric acid, oxalic acid, tartaric acid, malic acid, salicylic acid, weak base
Salt is one or both of ammonium chloride or ammonium sulfate.
Antirust agent described in the present invention is carboxylic acid amine salt, and fungicide is benzoisothiazolinone.
The advantages of polishing fluid prepared by the present invention is can to make inp wafer surface roughness using small-grain-diametersilica silica sol
< 0.3nm, and reduce costs.Acid ph value stability ensures during continuous polishing polishing fluid not gel simultaneously.
Specific embodiment
Embodiment 1:
Compound inp wafer polishing fluid, each composition by weight percent are as follows: 6% bimodal particle size silica solution, 7% hydrochloric acid (have
Imitate content 30%), 1.5% citric acid, 2% tartaric acid, 0.5% ammonium chloride, 0.05% carboxylic acid amine salt, 0.005% benzisothia
Oxazoline ketone, surplus are high purity water.Prepared inp wafer polishing fluid carries out polishing experiments: 90g/cm under the following conditions2,
35 DEG C, polishing test is carried out to inp wafer under conditions of 100mL/min, 4h, surface Ra < 0.3nm, polishing is used continuously
A pH value is detected every 1h in the process, is recorded as follows:
| Detection time | Initially | 1h | 2h | 3h | 4h |
| PH value | 2.36 | 2.36 | 2.38 | 2.40 | 2.45 |
Embodiment 2:
Compound inp wafer polishing fluid, each composition by weight percent are as follows: 15% bimodal particle size silica solution, 8% hydrochloric acid (have
Imitate content 30%), 2% citric acid, 0.5% tartaric acid, 0.8% ammonium chloride, 0.05% carboxylic acid amine salt, 0.005% benzisothia
Oxazoline ketone, surplus are high purity water.Prepared inp wafer polishing fluid carries out polishing experiments: 90g/cm under the following conditions2,
35 DEG C, polishing test is carried out to inp wafer under conditions of 100mL/min, 4h, surface Ra < 0.3nm, polishing is used continuously
A pH value is detected every 1h in the process, is recorded as follows:
| Detection time | Initially | 1h | 2h | 3h | 4h |
| PH value | 2.41 | 2.41 | 2.45 | 2.46 | 2.49 |
Specific embodiments of the present invention are described in detail above, but the content is only preferable implementation of the invention
Example, should not be considered as limiting the scope of the invention.It is all according to all the changes and improvements made by the present patent application range
Deng should still be within the scope of the patent of the present invention.
Claims (3)
1. a kind of inp wafer polishing fluid, it is characterised in that abrasive material is that small-grain-diametersilica silica sol is abrasive material, adds a kind of acid pH
Stabilizer, it is ensured that pH value is kept stable at 2-3 in production and polishing process.Its constituent and mass percentage are such as
Under:
Small particle abrasive material 6%-30%；Acid pH stabilizer 1%-15%；
Antirust agent 0.001%-0.1%；Fungicide 0.001-0.05%；
Ultrapure water surplus；
Abrasive material used is that the evengranular small-grain-diametersilica silica sol of our company's ion-exchange production is abrasive material, wherein small particle model
Enclosing is 40-60nm；
Acid pH stabilizer compounds the buffer system formed by hydrochloric acid, inorganic acid, organic acid and weak base salt by a certain percentage, respectively at
Dividing mass ratio is hydrochloric acid: organic acid: weak base salt=(10-20): (1-5): (0.5-1)；
The inorganic acid be HCl, organic acid be one or both of citric acid, oxalic acid, tartaric acid, malic acid, salicylic acid, it is weak
Alkali salt is one or both of ammonium chloride or ammonium sulfate.
2. described a kind of inp wafer polishing fluid according to claim 1, it is characterised in that antirust agent is carboxylic acid amine salt, sterilization
Agent is benzoisothiazolinone.
3. described a kind of inp wafer polishing fluid according to claim 1, it is characterised in that the polishing fluid pH value is 2-3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710649155.1A CN109280492A (en) | 2017-07-21 | 2017-07-21 | A kind of inp wafer polishing fluid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710649155.1A CN109280492A (en) | 2017-07-21 | 2017-07-21 | A kind of inp wafer polishing fluid |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109280492A true CN109280492A (en) | 2019-01-29 |
Family
ID=65185249
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710649155.1A Pending CN109280492A (en) | 2017-07-21 | 2017-07-21 | A kind of inp wafer polishing fluid |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109280492A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114133915A (en) * | 2021-11-26 | 2022-03-04 | 北京通美晶体技术股份有限公司 | Abrasive for polishing solution, polishing solution for fine polishing of indium phosphide crystals and preparation method of polishing solution |
| CN114559302A (en) * | 2022-03-01 | 2022-05-31 | 广东工业大学 | Polishing solution, indium phosphide polishing device and method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6398827B1 (en) * | 1999-07-02 | 2002-06-04 | Nissan Chemical Industries, Ltd. | Polishing composition |
| CN1572017A (en) * | 2001-10-26 | 2005-01-26 | 旭硝子株式会社 | Polishing compound, method for production thereof, and polishing method |
| CN1673306A (en) * | 2004-03-22 | 2005-09-28 | 花王株式会社 | Polishing composition |
| CN103402705A (en) * | 2011-01-27 | 2013-11-20 | 福吉米株式会社 | Polishing material and polishing composition |
| CN103596727A (en) * | 2011-06-08 | 2014-02-19 | 福吉米株式会社 | Abrasive and polishing composition |
| JP2015199840A (en) * | 2014-04-08 | 2015-11-12 | 山口精研工業株式会社 | Composition for polishing |
| CN105505312A (en) * | 2015-07-16 | 2016-04-20 | 湖州华通研磨制造有限公司 | Preparation method for grinding material |
-
2017
- 2017-07-21 CN CN201710649155.1A patent/CN109280492A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6398827B1 (en) * | 1999-07-02 | 2002-06-04 | Nissan Chemical Industries, Ltd. | Polishing composition |
| CN1572017A (en) * | 2001-10-26 | 2005-01-26 | 旭硝子株式会社 | Polishing compound, method for production thereof, and polishing method |
| CN1673306A (en) * | 2004-03-22 | 2005-09-28 | 花王株式会社 | Polishing composition |
| CN103402705A (en) * | 2011-01-27 | 2013-11-20 | 福吉米株式会社 | Polishing material and polishing composition |
| CN103596727A (en) * | 2011-06-08 | 2014-02-19 | 福吉米株式会社 | Abrasive and polishing composition |
| JP2015199840A (en) * | 2014-04-08 | 2015-11-12 | 山口精研工業株式会社 | Composition for polishing |
| CN105505312A (en) * | 2015-07-16 | 2016-04-20 | 湖州华通研磨制造有限公司 | Preparation method for grinding material |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114133915A (en) * | 2021-11-26 | 2022-03-04 | 北京通美晶体技术股份有限公司 | Abrasive for polishing solution, polishing solution for fine polishing of indium phosphide crystals and preparation method of polishing solution |
| CN114133915B (en) * | 2021-11-26 | 2023-01-06 | 北京通美晶体技术股份有限公司 | Abrasive for polishing solution, polishing solution for fine polishing of indium phosphide crystal and preparation method of polishing solution |
| CN114559302A (en) * | 2022-03-01 | 2022-05-31 | 广东工业大学 | Polishing solution, indium phosphide polishing device and method |
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Application publication date: 20190129 |