US20080074002A1 - Piezoelectric energy harvester - Google Patents

Piezoelectric energy harvester Download PDF

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Publication number
US20080074002A1
US20080074002A1 US11/527,044 US52704406A US2008074002A1 US 20080074002 A1 US20080074002 A1 US 20080074002A1 US 52704406 A US52704406 A US 52704406A US 2008074002 A1 US2008074002 A1 US 2008074002A1
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Prior art keywords
piezoelectric elements
energy harvesting
harvesting apparatus
elongated
energy
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Abandoned
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US11/527,044
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English (en)
Inventor
Shashank Priya
Robert D. Myers
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University of Texas System
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University of Texas System
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Priority to US11/527,044 priority Critical patent/US20080074002A1/en
Assigned to BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM reassignment BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MYERS, ROBERT D., PRIYA, SHASHANK
Priority to PCT/US2007/079560 priority patent/WO2008039852A2/fr
Priority to US12/057,107 priority patent/US7649305B2/en
Publication of US20080074002A1 publication Critical patent/US20080074002A1/en
Abandoned legal-status Critical Current

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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02JCIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J7/00Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
    • H02J7/32Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries for charging batteries from a charging set comprising a non-electric prime mover rotating at constant speed
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02NELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N2/00Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
    • H02N2/18Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
    • H02N2/186Vibration harvesters
    • H02N2/188Vibration harvesters adapted for resonant operation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/30Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/304Beam type
    • H10N30/306Cantilevers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B40/00Technologies aiming at improving the efficiency of home appliances, e.g. induction cooking or efficient technologies for refrigerators, freezers or dish washers

Definitions

  • Promising applications for piezoelectric energy harvesting have inherent forms of energy to capture, store and use. Examples include “active” sports equipment such as tennis racquets and skis that use strain to power actuators for feedback control loops, and watches that use body motion to supply power. Other applications which have been suggested include the use of aircraft engine vibrations, airflow over wings, vibrations induced by driving on a road, and periodic vibrations generated by rotating machinery or engines.
  • the selection of the energy harvester as compared to other alternatives such as battery depends on three main factors, cost effectiveness, profile and reliability. In an other form, the energy harvester can supplement the other energy alternatives such as battery and prolong their lifetime.
  • Conversion of mechanical low frequency stress into electrical energy is obtained through the direct piezoelectric effect, using a rectifier and DC-DC converter circuit to store the generated electrical energy.
  • the mechanical output can be in the form of a burst or continuous signal depending on the cyclic mechanical amplifier assembly. Depending on the frequency and amplitude of the mechanical stress, one can design the required transducer, its dimensions, vibration mode and desired piezoelectric material.
  • the energy generated is proportional to frequency and strain and higher energy can be obtained by operating at the resonance of the system.
  • the invention pertains generally to a mechanism for capturing mechanical energy and converting it to electrical energy, and is particularly useful for continually charging or providing emergency power to mobile, battery-powered devices that are handled or carried by persons.
  • the mechanism comprises a plurality of elongated piezoelectric elements for generating electric energy from mechanical energy.
  • the piezoelectric elements are mounted to one or more support structures in a cantilevered fashion, with a single point of support, such as one end supported or fixed and an opposite end free to move relative to the fixed end within a predetermined plane relative to the support structures.
  • the piezoelectric elements are supported at two or more fixed points of support, with the element free to bend between the points of support and within a predetermined plane relative to the fixed points of support.
  • the plurality of piezoelectric elements are preferably arranged so that at least each three-dimensional coordinate axis (e.g. x, y and z) has at least one element is structured and oriented to bend or flex predominantly in a plane normal to the axis, allowing harvesting of energy from forces applied in any direction without regard to the orientation of the energy harvesting mechanism to the forces.
  • This arrangement results in improved coupling of the transducer with the random movements or vibrations that may not be confined to any particular plane or in a plane that is not necessarily aligned with the plane in which a piezoelectric element is designed to bend, thus improving the efficiency of energy capture.
  • FIG. 1 is a schematic diagram of a cantilevered piezoelectric parallel bimorph element.
  • FIG. 2 is a schematic diagram of a cantilevered piezoelectric serial bimorph element.
  • FIG. 3 illustrates a grouping of commonly oriented piezoelectric elements in a clamp.
  • FIG. 4 illustrates an example of a energy harvesting mechanism in a single enclosure using the groupings of piezoelectric elements shown in FIG. 3 .
  • FIG. 5 illustrates an example of a micromachined array of cantilevered piezoelectric elements.
  • FIG. 6 illustrates a second example of a micromachined array of cantilevered piezoelectric elements.
  • FIG. 7 illustrates assembly of the arrays of FIGS. 5 and 6 into a compact energy harvesting mechanism or generator.
  • FIG. 8 illustrates further assembly of the generator of FIG. 7 .
  • FIG. 9 illustrates a nearly complete assembly of the generator of FIGS. 7 and 8 , without a cap enclosing the assembly.
  • FIG. 10 is a schematic illustration of a generator, such as the one shown in FIGS. 7-9 , as part of a charging apparatus for a battery for a mobile device.
  • FIG. 11A is an electrical schematic of a circuit for charging the battery using a piezoelectric energy harvesting mechanism, with a signal conditioning element.
  • FIG. 11B is an electrical schematic of a circuit for charging the battery using a piezoelectric energy harvesting mechanism, with a switching diode element.
  • FIG. 12 schematically illustrates another example of a piezoelectric energy harvester.
  • FIG. 13 illustrates deployment of multiple numbers of the piezoelectric energy harvester of FIG. 12 in a mobile device, which is indicated in phantom.
  • FIG. 14 illustrates schematically an orthographic view of an example of a piezoelectric energy harvesting mechanism formed on a monolithic substrate.
  • FIG. 15 is a cross-sectional view of the energy harvesting mechanism of FIG. 14 , taken along section lines 15 - 15 .
  • FIG. 16 is a cross-sectional view of the energy harvesting mechanism of FIG. 14 , taken along section lines 16 - 16 .
  • FIG. 17 is a cross-sectional view of one piezoelectric element of the energy harvesting mechanism of FIG. 14 .
  • FIGS. 18A-18E illustrate a series of steps of forming piezoelectric elements on the monolithic substrate for the energy harvesting mechanism of FIG. 14 .
  • FIG. 19 illustrates schematically a stacked wafer or stacked die embodiment for an energy harvesting mechanism.
  • FIG. 20 is a cross-section of FIG. 19 taken along section line 20 - 20 .
  • FIG. 21 is an example of an energy harvesting mechanism formed on monolithic substrate using piezoelectric elements supported at two or more points.
  • FIGS. 1 and 2 each illustrate schematically cantilevered piezoelectric elements, each comprised of a piezoelectric transducer for generating a voltage in response to mechanical strain of the transducer.
  • Each piezoelectric element 100 and 200 is elongated and is mounted to a structure 102 and 202 , respectively in a cantilevered fashion.
  • Each has a length L and an axis 103 and 203 , respectively, extending along its length.
  • Each element is anchored near one end of its length to a structure, and its opposite end left free. Forces applied to the element, in a direction generally normal to its axis, will tend to bend and thus strain the element, generating a voltage across the element generally in a plane defined by the force and the axis of the element.
  • each element has substantially larger width as compared to its thickness so that it tends to bend more easily in a plane indicated by arrows 104 and 204 , as compared to other directions, thus making it more sensitive to vector forces within that plane, particularly ones that are normal or near normal to the axis.
  • Each of the piezoelectric elements shown in FIGS. 1 and 2 is preferably elongated and relatively flat, so that it deflects and resonates predominately in a single plane that contains the axis of its predominate dimension and the vector forces that cause deflection of the element.
  • This mode of deflection corresponds to the d 31 piezoelectric strain constant. It is generally preferred that the length should be at least 10 times the width, and the width should be at least 5 times the thickness of the element. This provides one dominant resonance mode associated with the length of the piezoelectric element, with other resonance modes associated with length and width relatively suppressed.
  • This ratio of 10 to 5 to 1 ensures good frequency spacing for the resonances (including overtones) in each possible direction of deflection, which tends to avoid signals from subordinate resonance modes interfering with signals for the dominant resonant mode, resulting in more efficient conversion of kinetic energy to electrical energy.
  • piezoelectric elements 100 and 200 possess a bimorph structure, meaning that they are comprised of two layers of piezoelectric material 106 and 108 , and 206 and 208 , respectively.
  • Bimorph elements tend to provide high power density and have lower resonance frequency as compared to single layer, or unimorph, piezoelectric elements.
  • Each layer has a piezoelectric coefficient labeled as “P,” which is equal to piezoelectric coefficient d 31 for the material and corresponds to a bending motion.
  • Bimorph piezoelectrics have sufficient mechanical strength for high amplitude vibrations in the range of 1-10 Hz.
  • the applied load on the bimorph can be of the order of several Newtons of force.
  • Bimorphs can be electrically driven in order to obtain the bending movement by polarizing each layer in opposite direction.
  • the arrows next to the “P” indicate the direction of polarization.
  • a 3 -terminal input is used for a driving power supply.
  • FIG. 1 illustrates a parallel configuration, in which the polarization of each layer is in the same direction
  • FIG. 2 illustrates a serial configuration, in which the polarization in each layer is in opposite directions.
  • a positive side of the driver input is connected to a positive terminal of the piezoelectric transducer, a negative terminal is connected to zero, and an electrode layer is connected to alternating positive voltage or zero.
  • ground input 110 is connected to a bottom electrode of layer 106 and output 112 from op amp 213 is connected to middle electrode layer, between the layers.
  • Supply voltage input 114 for the op amp is also connected to the top electrode of layer 108 .
  • ground line 210 is connected to a bottom electrode of layer 206 and output 212 of op amp 213 is connected to the middle electrode.
  • Supply voltage 214 for the op amp is not connected to the bimorph.
  • the bimorph or layered piezoelectric may be fabricated using a dry sheet process or a wet build-up process.
  • powdered ceramic material is mixed with a polymeric binder and cast onto moving belts to form green ceramic tapes.
  • the tapes are then coated with a film of the electrode material, usually silver or a silver palladium alloy.
  • the coated tapes are next stacked upon each other and pressed together.
  • the final structure is sandwiched between top and bottom ceramic layers without electrodes to form a ‘pad’, which is diced into individual components.
  • the components are sintered at elevated temperatures of 900 to 1,100° C. After cooling, the components are poled at high temperature and field. The poled components are then mounted on a metallic sheet in the bimorph configuration.
  • Each cantilevered piezoelectric element possesses a natural resonance frequency dictated at least in part by how it is supported, the materials(s) used in the element, and its length, thickness, shape, mass, and distribution of mass.
  • the cross sectional shape of the element in the examples illustrated in FIGS. 1 and 2 is predominately rectangular, other cross sections could be employed.
  • the mass of the element need not be distributed evenly along its length. For example, more mass, which need not necessarily be of piezoelectric material, can be concentrated in the free end or tip, thereby increasing the moment of inertia and lowering the resonance frequency.
  • the element could also be shaped differently along its length to alter resonant characteristics or for other reasons.
  • Tuning the resonant frequency of a piezoelectric element to correspond generally to the expected frequency band of forces to be applied improves coupling and leads to higher efficiency.
  • the tuning of the resonant frequency of the energy harvester to the available vibration band can be done by several ways, depending on the type piezoelectric element and how it is supported, including changing the length of the piezoelectric element, increasing the number of layers of the piezoelectric element, adding the mass at the tip of the piezoelectric element, changing the thickness of the electrode layer, changing the thickness of an intermediate metal layer and mounting mechanism.
  • Such a mechanism is thus able to harvest energy from movement of the mechanism in any direction. It is advantageous for use in applications, for example, in which forces applied by movement of the mechanism, are unpredictable, or in which the orientation of the energy harvesting mechanism cannot be known, set or maintained. Additional piezoelectric elements which are not aligned with three coordinate axes could be included, if found desirable.
  • the resonance frequency of the cantilevered piezoelectric elements can be tuned to relatively low frequencies, typically less than 30 hertz.
  • the energy harvesting mechanism can be placed in a powered device carried by the person, without concern for the orientation of the device, or it can be placed on the person, such as in an article of clothing, including a belt or shoe, or placed in or on an item carried by the person, such as a bag, backpack, briefcase, belt clip or holster.
  • FIGS. 3 and 4 illustrate one example of energy harvesting mechanism or generator.
  • An array of multiple cantilevered piezoelectric elements 300 are anchored or fixed by, for example, a clamp 302 into a grouping 304 . All of the elements in the grouping are oriented in the same direction.
  • the piezoelectric elements can be unimorph or bimorph. However, in this example they are thick film bimorphs. Selecting elements with substantially equal resonance frequencies for a grouping and orienting them in the same direction as shown in the drawings permits closer spacing. In such an arrangement, the piezoelectric elements will typically move in unison, in the same direction, in response to a force applied to the structure to which they are fixed or mechanically coupled. Closer spacing permits greater density, resulting in more energy harvested per unit volume.
  • a lower portion 402 of a case is formed to receive three groupings 404 , 406 and 408 of cantilevered piezoelectric elements.
  • Each is substantially the same as the one shown in FIG. 3 , but oriented differently.
  • Arrows 410 , 412 , and 414 respectively, indicate the direction of sensitivity of the cantilevered piezoelectric elements, which correspond to three coordinate axes.
  • a cover mates with the lower portion 402 to form a protective case. Additional energy can be generated by adding additional groupings, and/or by adding more piezoelectric elements to each grouping. Electrical connections and rectifying circuitry are omitted in these figures.
  • the lower portion of the case 402 serves, along clamps 302 , as a fixture for maintaining the respective orientations of the groupings of piezoelectric elements and to couple mechanically the piezoelectric elements to forces from which energy is to be harvested.
  • the case or other fixture or package in which the piezoelectric elements are mounted may also serve to protect the piezoelectric elements and associated circuitry.
  • arrays of cantilevered piezoelectric elements 500 and 600 extending, respectively, from frames 502 and 602 are cut from a single slab of piezoelectric ceramic material.
  • a laser, 3-D cutting tools or other micromaching process may be used to cut the design.
  • an electrode pattern is printed on the plates and the ceramic is poled.
  • Frames 502 and 602 differ on the type of structure used for registering the plates to each other and to a base structure.
  • Frame 502 includes holes 503 .
  • different frames or different groupings of frames within a stack can be tuned to be sensitive to different frequencies of force in order to improve coupling.
  • Each of the cantilevered piezoelectric elements 500 and 600 has an added mass 504 and 604 , respectively, on its free or tip end in order to lower the resonance frequency.
  • the array of cantilevered elements in each frame includes elements of different lengths.
  • frames 500 and 600 are assembled into larger arrays by stacking them on a base 700 in a box-like configuration.
  • Stack 800 is oriented so that its cantilevered piezoelectric elements are most sensitive to vector forces in the direction indicated by arrows 704 .
  • Stack 802 is oriented so that its cantilevered piezoelectric elements are most sensitive to vector forces in the direction indicated by arrows 706 .
  • Stack 806 is oriented so that its cantilevered piezoelectric elements are most sensitive to vector forces in the direction indicated by arrows 708 .
  • Legs 604 are inserted into grooves 702 .
  • Bands 900 shown in FIG. 9 , hold stack 806 together.
  • a top plate not shown, is added.
  • the entire structure is preferably encased. Electrical connections are made by strips of silver electrode paint applied to the frames.
  • An electrode on the side of a frame from which the cantilevered elements extend serves as the negative electrode.
  • An electrode on the opposite side of the frame services as the positive electrode.
  • each adjacent frame is preferably separated by a small amount.
  • a thin layer of conductive material, such as electrode paint, can be used for this purpose. Since the currents generated by each of the stacks will not be in phase, an insulating material is preferably placed between each of the stacks in order to isolate the circuit for each stack.
  • the energy harvesting mechanism comprised of the arrays of piezoelectric elements such as shown in FIGS. 3-9 is as a generator 1000 for charging battery 1002 .
  • Accumulator 1004 includes circuitry for rectifying the voltage and interfacing with battery 1004 in order to charge the battery.
  • FIGS. 11A and 11B schematically illustrate examples of circuits for use in charging a battery using a generator or energy harvester. Because piezoelectric elements oriented in different directions will generate out of phase currents in response to a given vibration, it is preferred that at least three rectifiers or AC to DC circuits be used, one for each orientation, with the resulting DC currents combined.
  • Piezoelectric generators 1102 , 1104 , and 1106 each represent all of the piezoelectric elements for the X, Y and Z axes, respectively. Each is coupled to a separate rectifier 1108 , 1110 and 1112 , respectively. These are preferably full wave rectifiers.
  • piezoelectric elements for a particular axis have different resonant frequencies, it may be desirable to rectify separately current from piezoelectric elements having different resonant frequencies in order to avoid phase cancellations.
  • the outputs of the rectifiers which is a DC current, are summed before being used to charge battery 1114 .
  • the DC current is conditioned by conditioning circuit 1116 prior to delivery to the battery.
  • the conditioning circuit generates a charging profile that improves battery charging.
  • the conditioning circuit may comprise converter circuits, including buck-buck converter and/or buck boost converter for modulating the impedance of the circuit.
  • the conditioning circuit may not provide satisfactory charging.
  • the current is passed through a diode that allows only flow of current to the battery and preferably includes a diode switch 1118 to cut off current below a certain threshold.
  • each with piezoelectric elements mounted along one or two axes can be fixed in a portable device in different orientations.
  • two piezoelectric elements 1202 and 1204 are supported in a cantilevered fashion in an “L” arrangement in side enclosures 1206 . They are supported by a common base 1208 , which supplies the electrical connections to the electrodes on the elements (not shown).
  • the piezoelectric elements are preferably bimorphs. They are oriented such that their axes are mutually orthogonal and each element's dominant mode of deflection lies in mutually orthogonal planes.
  • Fixing at least two generators 1200 to a portable device, in this example in corners of mobile telephone 1300 , in mutually orthogonal orientations, provides for efficient coupling to vector forces from any direction. If a generator includes only piezoelectric elements oriented for bending in the same plane, at least three such generators could be mounted discretely within a device in mutually orthogonal orientations. Distributing multiple numbers of smaller generators in this fashion can permit more efficient utilization of space within a portable device, and avoids a requirement for a single, relatively large volume.
  • arrays of piezoelectric elements are fabricated from a monolithic semiconductor substrate, such as silicon crystal, using conventional photolithographic and other integrated circuit fabrication techniques. Similar techniques can be used to fabricate piezoelectric elements supported at two or more points.
  • monolithic piezoelectric generator 1400 includes a plurality of arrays 1402 of cantilevered piezoelectric elements 1403 formed to bend primarily along an X axis indicated by arrow 1404 , a plurality of arrays 1406 of cantilevered piezoelectric elements 1407 formed to bend primarily along a Y axis indicated by arrow 1408 , and a plurality of arrays 1410 of cantilevered piezoelectric elements 1411 formed to bend primarily along a Z axis indicted by arrow 1412 .
  • the arrays in each of the plurality of arrays 1402 , 1406 , and 1410 may optionally be fabricated with piezoelectric elements tuned to different resonant frequencies.
  • one “X” axis array would have piezoelectric elements tuned to a one resonant frequency and the other “X” axis would have piezoelectric elements tuned to a different resonant frequency.
  • FIGS. 18A-18E show in detail a cross section of a single cantilever of the monolithic generator 1400 of FIGS. 14-17 , the generator is formed on a substrate of silicon crystal 1802 having oxide layer 1804 formed on the bottom and an oxide layer 1806 formed on the top of the substrate, each acting as an electrical insulator.
  • Similar methods have been described in P. Muralt, J. Baborowski, and N. Ledermann, “Piezoelectric MEMS with PZT Thin Films: Integration and Application Issues”, pp. 231-260, in Piezoelectric Materials in Devices Ed. Nava Setter, ISBN 2-9700346-0-3, May (2002), Lausanne 1015, Switzerland.
  • a layer of platinum (Pt) 1808 is formed on top of oxide layer 1806 .
  • a film of barium titanate (BaTiO 3 ) 1810 is formed on the Pt layer.
  • One method of forming the layer is by spin coating a solution of BaTiO 3 on to the Pt layer.
  • the solution is a mixture of a calculated amount of Ba alkoxides dissolved into 2 -butoxyethanol and titanium tetra-n-butoxide [Ti(O—C 4 H 9 ) 4 ], which is separately stabilized with acetylacetone [CH 3 COCH 2 COCH 3 ] and refluxed.
  • the solution is spin coated onto the wafer, the resulting film is crystallized directly in the diffusion furnace under oxygen atmosphere at various temperatures between 550 and 700° C. The film is then annealed under an oxygen atmosphere.
  • a layer of Au/Cr electrodes 1812 are evaporated and patterned by lift off. Vias 1813 are opened through the BaTiO 3 film to give access to the bottom electrode.
  • the narrow slit surrounding the cantilevered section is patterned through the layers of BaTiO 3 , Pt, and SiO 2 .
  • the BaTiO 3 and Pt films are etched as shown in FIGS. 18C by means of, for example, an etchant and ion-beam with photoresist mask.
  • the underlying SiO 2 film 1806 is etched with chemical process.
  • the cantilever and beam are released by deep reactive ion etching silicon from the front side, as shown in FIG. 18E . Deep reactive ion etching silicon from the backside is then used to define the thickness of each cantilever section (1-20 ⁇ m) 1814 .
  • die 1902 includes only arrays 1410 of cantilevered piezoelectric elements 1411 formed to resonate primarily along the “Z” axis 1903 .
  • die 1904 includes only arrays 1406 of cantilevered piezoelectric elements 1407 formed to resonate primarily along the “Y” axis 1905 .
  • die 1906 includes only arrays 1402 of cantilevered piezoelectric elements 1403 formed to resonate primarily along the “Z” axis 1907 .
  • X and Y axes die 1904 and 1906 are essentially formed identically, but are assembled with one rotated 90 degrees to the other.
  • FIG. 21 illustrates an energy harvester 2100 formed on a single, monolithic substrate 2102 having a plurality of piezoelectric elements supported at two or more points.
  • Piezoelectric elements 2104 are elongated and generally comparatively wide and thin. They are mounted in a bridge-like fashion, supported at each end by a support pad 2106 . Each is fabricated or mounted in an orientation that is sensitive to vector forces along either the “X” or “Y” axis, with dominant modes of resonance in a plane defined by their respective axes and the X or Y axis.
  • Elongated piezoelectric element 2108 is supported at three points by pads 2106 and is sensitive to forces in the “Z” direction.
  • the span of a piezoelectric element extending between two points does not require as much deflection to create the same amount of strain in the material and, thus, the same amount of voltage. Electrodes (not shown) are placed on opposite sides of the piezoelectric element within the plane of the dominant resonance mode.
US11/527,044 2006-09-26 2006-09-26 Piezoelectric energy harvester Abandoned US20080074002A1 (en)

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PCT/US2007/079560 WO2008039852A2 (fr) 2006-09-26 2007-09-26 Capteur d'énergie piézoélectrique
US12/057,107 US7649305B2 (en) 2006-09-26 2008-03-27 Piezoelectric energy harvester

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Owner name: BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM,

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:PRIYA, SHASHANK;MYERS, ROBERT D.;REEL/FRAME:018724/0818

Effective date: 20061208

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION