US20070246350A1 - Plating apparatus - Google Patents
Plating apparatus Download PDFInfo
- Publication number
- US20070246350A1 US20070246350A1 US11/785,754 US78575407A US2007246350A1 US 20070246350 A1 US20070246350 A1 US 20070246350A1 US 78575407 A US78575407 A US 78575407A US 2007246350 A1 US2007246350 A1 US 2007246350A1
- Authority
- US
- United States
- Prior art keywords
- plating
- plating solution
- flow path
- anode
- path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000007747 plating Methods 0.000 title claims abstract description 255
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000012528 membrane Substances 0.000 claims description 38
- 239000010408 film Substances 0.000 description 21
- 239000010949 copper Substances 0.000 description 19
- 229910000365 copper sulfate Inorganic materials 0.000 description 7
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000010485 coping Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/002—Cell separation, e.g. membranes, diaphragms
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/02—Tanks; Installations therefor
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
Definitions
- the present invention relates to a plating apparatus for use in a plating process for manufacturing semiconductor devices.
- the facedown type plating apparatus adopts a form (referred to as facedown form) of arranging a substrate such as silicon wafer above a plating solution bath and forms a plated layer such as a copper layer on the substrate.
- the plating solution bath having an anode electrode disposed at the bottom thereof and a plating solution filled therein.
- the substrate is arranged such that the surface thereof, on which plating treatment is executed, faces the solution surface of the plating solution.
- the plating treatment is executed by applying voltage between the substrate and the anode electrode in this condition.
- the facedown form has been increasingly widely used since it is advantageous in, for example, downsizing the plating apparatus.
- FIG. 1 shows a configuration of the conventional plating apparatus 101 in a cross sectional view.
- the conventional plating apparatus 101 includes a plating treatment chamber 102 , a tank 103 , a pump 104 , and a constant current power source 105 .
- the tank 103 holds a plating solution flowed out from the plating treatment chamber 102 .
- the pump 104 circulates the plating solution held in the tank to the plating solution chamber 102 .
- the pump 104 circulates the plating solution through the tank 103 and the plating treatment chamber 102 .
- the constant current power source 105 supplies DC current to wafer holders 111 and an anode contact plate 119 , which are described later.
- the plating treatment chamber 102 includes the wafer holders 111 for holding a wafer 107 and a plating treatment chamber inner bath 112 for holding the plating solution.
- the plating treatment chamber 102 is provided with circulation drains 113 , which are connected to the plating treatment chamber inner bath 112 via respective anode chamber drain nozzles 114 .
- the plating treatment chamber inner bath 112 includes the anode contact plate 119 , an anode 115 , a membrane 117 , and a diffuser plate 118 .
- the plating treatment chamber inner bath 112 configures an anode chamber 121 between the anode 115 and the membrane 117 .
- the plating treatment chamber inner bath 112 configures a membrane diffuser plate chamber 122 above the membrane 117 .
- the anode contact plate 119 supplies to the anode 115 , a current outputted from the constant current power source 105 .
- the anode 115 acts as a bottom electrode in correspondence with the current supplied via the anode contact plate 119 .
- the membrane 117 filters additive decomposition products contained in the plating solution.
- the diffuser plate 118 supplies the plating solution to the wafer 107 such that the plating solution flows uniformly to the wafer 107 .
- a plating solution supply nozzle 116 is configured which penetrates through the anode contact plate 119 , the anode 115 , and the membrane 117 .
- the plating solution supplied into the membrane diffuser plate chamber 122 passes through the diffuser plate 118 and then is discharged through the circulation drains 113 .
- the plating solution supplied into the anode chamber 121 is discharged from the circulation drains 113 via the anode chamber drain nozzles 114 provided for the anode chamber 121 .
- the plating solution is supplied from the plating solution supply nozzle 116 at a rate of 61/min.
- a current of 1 to 10 A is supplied to the anode 115 for approximately two to five minutes.
- JP-P-2001-316887 discloses a face down type plating apparatus.
- United States Patent Document U.S. Pat. No. 6,890,4166 discloses another plating apparatus.
- the another plating apparatus is provided with a pump, anode chamber and membrane diffuser plate chamber. The rotation rate and stroke of the pump is increased to control the flow rates of plating solution flowing to the entire of the anode chamber, membrane diffuser plate chamber and surface of a wafer to be plated.
- Cu thick copper
- Cu concentration in the plating solution flowing on the anode 115 may become high.
- a small flow rate of the plating solution flowing on the anode 115 in this condition may cause deposition of crystals of copper sulfate on the anode 115 .
- the crystals of copper sulfate on the anode 115 increase the electric resistance between the plating solution and the anode 115 . This may make it difficult to maintain the current of approximately 10 A for a long period of time, which may in turn result in failure to perform an appropriate plating treatment.
- a power supply which can supply high voltage, has been used as the constant current power source to secure desired current, thereby coping with the problem of the increased resistance.
- the flow rate of the plating solution flowing on the anode 115 has been increased by increasing the amount of the plating solution supplied to the plating treatment chamber 102 .
- the pump increases the flow rate of the plating solution and thereby enables suppressing the deposition of crystals of copper sulfate on an anode of the plating apparatus.
- an increased amount of the plating solution to be supplied results in an increased amount of the plating solution flowing to the surface of the membrane 117 .
- the plating solution flowing on the surface of the wafer 107 flows faster. This may make it difficult to form a plated film with a uniform film thickness over the surface of the wafer 107 .
- the increased amount of the plating solution raises the consumption of various components contained in the plating solution, resulting in the increased cost for plating the wafer.
- a plating apparatus in an aspect of the present invention, includes a plating treatment bath and a substrate holder.
- the plating treatment bath is configured to reserve a plating solution for plating a substrate.
- the substrate holder is provided above the plating treatment bath and configured to hold the substrate such that the substrate can rotate in a horizontal plane.
- the plating treatment bath includes an anode electrode provided inside the plating treatment bath.
- the substrate holder includes a cathode electrode for contacting the substrate to apply a voltage to the substrate.
- the plating apparatus includes a first flow path, a supply path, a second flow path and a flow rate control valve.
- the first flow path is configured to circulate the plating solution, which is discharged from the plating treatment bath via a first discharge portion, to the plating treatment bath.
- the supply path is configured to supply the plating solution, which is provided from the first flow path, into the plating treatment bath.
- the second flow path is configured to provide the plating solution, which is discharged from the plating treatment bath via a second discharge portion after flowing on the anode electrode, to the first flow path.
- the flow rate control valve is provided between the first flow path and the second flow path. The flow rate control valve is configured to control a flow rate of the plating solution provided from the second flow path to the first flow path.
- the flow rate control valve controls the flow rate of the plating solution flowing along the second flow path such that the deposition of copper sulfate crystals on the anode electrode can be suppressed. Moreover, the flow rate control valve adjusts its valve opening not to increase a flow speed of the plating solution flowing along the substrate surface.
- the present invention is effective in optimally controlling only the flow rate of the plating solution flowing to an anode chamber without changing the amount of the plating solution to be supplied. That is, the present invention enables a variable flow rate of the plating solution flowing to the anode chamber while keeping constant the flow rate of the plating solution flowing on a surface of the wafer. The present invention enables a plating treatment for forming plated films of various thickness from thin film thickness to thick film thickness while keeping constant the flow rate of the plating solution flowing on the surface of the wafer.
- a flow rate of the plating solution flowing on the anode electrode can be reduced to smaller flow rate than when a thick film is plated.
- the reduction in the flow rate of the plating solution can suppress the consumption of additives and also increase in cost.
- a plating treatment can be executed without configuring a constant current power source that can supply high voltage. This permits execution of an appropriate plating treatment without increasing facility-related costs.
- an increase in a flow speed of the plating solution on the wafer surface can be suppressed to thereby provide a plated film of uniform film thickness over the surface of the wafer.
- FIG. 1 is a sectional view illustrating a configuration of a conventional plating apparatus
- FIG. 2 is a sectional view illustrating a configuration of a plating apparatus according to a first embodiment of the present invention.
- FIG. 3 is a sectional view illustrating a configuration of a plating apparatus according to a second embodiment of the present invention.
- a plating apparatus 1 according to the present invention is an apparatus which plates a silicon wafer with copper to thereby form the Cu film. This does not mean that the present invention is only applicable to plating treatment for forming the Cu film.
- FIG. 2 is a sectional view that illustrates configuration of a plating apparatus 1 according to the first embodiment of the present invention.
- the plating apparatus 1 of the first embodiment includes a plating treatment chamber 2 , a tank 3 , a pump 4 , a constant current power source 5 , and flow rate control valves 6 .
- the plating treatment chamber 2 is a treatment bath in which the plating treatment on a wafer 7 is executed.
- the plating treatment chamber 2 reserves a plating solution for use in performing the plating treatment on the wafer 7 .
- the tank 3 holds the plating solution discharged from the plating treatment chamber 2 .
- the pump 4 supplies the plating solution held in the tank 3 to the plating treatment chamber 2 .
- the constant current power source 5 provides an electric power required for the plating treatment performed by the plating treatment chamber 2 .
- the flow rate control valve 6 controls the flow rate of the plating solution flowing to the anode chamber while keeping constant the flow rate of the plating solution flowing on the wafer surface.
- the plating treatment chamber 2 includes a plating treatment chamber inner bath 12 .
- the plating treatment chamber 2 is also provided with circulation drains 13 .
- Wafer holders 11 hold the wafer 7 .
- the wafer holders 11 are in contact with the wafer 7 which is arranged with the surface thereof subjected to plating treatment facing downward.
- the wafer holders 11 hold the wafer 7 such that the wafer 7 can rotate.
- the wafer holders 11 are connected to the constant current power source 5 via a first node N 1 .
- an anode 15 is configured inside the plating treatment chamber inner bath 12 . As shown in FIG. 2 , the anode 15 is connected to an anode contact plate 19 , which is provided outside the plating treatment chamber inner bath 12 .
- the anode contact plate 19 is connected to the constant current power source 5 via a second node N 2 . Therefore, the anode 15 acts as an anode electrode (bottom electrode) in correspondence with a current supplied via the anode contact plate 19 .
- the circulation drains 13 are configured in the plating treatment chamber 2 , and each serve as a flow path for circulating the plating solution flowing out from the plating treatment chamber inner bath 12 .
- the plating apparatus 1 configures a plating solution circulating flow path 8 (first flow path) with the circulation drains 13 , the tank 3 , and the pump 4 .
- the plating treatment chamber inner bath 12 described above includes anode chamber drain nozzles 14 , a plating solution supply nozzle 16 , a membrane 17 , and a diffuser plate 18 .
- the anode chamber drain nozzle 14 is an outlet port for discharging the plating solution contained in an anode chamber 21 .
- the anode chamber drain nozzles 14 according to the present embodiment are connected to the flow rate control valves 6 .
- the membrane 17 filters additive decomposition products contained in the plating solution.
- the diffuser plate 18 supplies the plating solution such that the plating solution flows uniformly to the wafer 107 .
- the plating solution supply nozzle 16 is a plating solution supply path in the plating apparatus 1 according to the present embodiment.
- the plating solution supply nozzle 16 penetrates through the anode contact plate 19 , the anode 15 , and the membrane 17 .
- the plating solution supplied into a membrane diffuser plate chamber 22 passes through the diffuser plate 18 , and is discharged from the circulation drains 13 .
- the plating solution supplied into the anode chamber 21 is supplied from the anode chamber drain nozzles 14 , which are provided in the anode chamber 21 , to the circulation drains 13 via the flow rate control valves 6 .
- the plating apparatus 1 is provided with the anode chamber drain nozzles 14 of large nozzle diameter size.
- the anode chamber drain nozzles 14 of large nozzle diameter size ensure a sufficient amount of the plating solution flowing to the anode chamber drain nozzles 14 . That is, the large nozzle diameter size of the anode chamber drain nozzles 14 reduces the flow resistance of the nozzles 14 , thereby permitting a sufficient amount of the plating solution to flow to the anode chamber drain nozzles 14 .
- the flow rate control valve 6 controls valve opening such that the flow rate of the plating solution flowing through the anode chamber drain nozzle 14 is between 60 and 100 ml/min.
- An experiment has proved that, in the plating treatment for forming the Cu film or the like, controlling this flow rate between 60 and 100 ml/min provides favorable results. That is, controlling the flow rate of the plating solution flowing through the anode chamber drain nozzle 14 between 60 and 100 ml/min by use of the flow rate control valve 6 prevents the Cu concentration in the plating solution flowing on the anode 15 from becoming high.
- the flow rate control valves 6 controls the flow late of the plating solution.
- the plating apparatus 1 suppresses formation of the crystals of copper sulfate on the anode 15 and thus prevents an increase in the electrical resistance between the anode 15 and the plating solution.
- the flow rate control valve 6 can vary the flow rate of the plating solution flowing to the anode chamber 12 while keeping constant the flow rate of the plating solution flowing on the surface of the wafer 7 , thereby avoiding stagnation of the flow on the anode 15 .
- the plating apparatus 1 can form an appropriate Cu film.
- the flow rate of the plating solution flowing on the anode 15 can be reduced smaller than that for forming the thicker Cu film. Thereby, the plating apparatus 1 suppresses the consumption of additive and thus increase in the cost.
- the flow rate of the plating solution supplied to the membrane diffuser plate chamber 22 is controlled at an optimum level, thus permitting the thickness of the film to be uniform over the surface of the wafer 7 . Further, there is no increase in the electrical resistance, thus permitting configuration of the plating apparatus which forms the appropriate Cu film without being provided with a power supply which can supply high voltage. This permits reduction in the costs spent on facilities for the plating apparatus.
- FIG. 3 is a sectional view that illustrates configuration of the plating apparatus 1 according to the second embodiment of the present invention.
- components provided with the same numerals as those in the first embodiment have the same configuration and operation as those in the first embodiment. Therefore, the descriptions for the overlapping components are omitted from the following description.
- the pump 4 in the plating solution circulating flow path 8 is provided with an anode chamber pump 31 and a membrane diffuser plate chamber pump 32 .
- the plating solution supply nozzle 16 includes a membrane diffuser plate chamber plating solution supply nozzle 33 and anode chamber plating solution supply nozzles 34 .
- the anode chamber pump 31 is connected to the anode chamber plating solution supply nozzles 34 .
- the membrane diffuser plate chamber pump 32 is connected to the membrane diffuser plate chamber plating solution supply nozzle 33 .
- the anode chamber plating solution supply nozzle 34 supplies the plating solution to the anode chamber 21 .
- the membrane diffuser plate chamber plating solution supply nozzle 33 supplies the plating solution to the membrane diffuser plate chamber 22 .
- the membrane diffuser plate chamber plating solution supply nozzle 33 and the anode chamber plating solution supply nozzles 34 are configured independently from each other.
- the anode chamber pump 31 supplies the plating solution to the anode chamber plating solution supply nozzles 34
- the membrane diffuser plate chamber pump 32 supplies the plating solution to the membrane diffuser plate chamber plating solution supply nozzle 33 . Therefore, controlling the flow rates of the plating solution supplied by the anode chamber pump 31 and the membrane diffuser plate chamber pump 32 permits highly accurate control of flow rates of the plating solution flowing in the anode chamber 21 and in the membrane diffuser plate chamber 22 .
- the plating apparatus 1 can control independently the flow rates of the plating solution supplied to the anode chamber 21 and the membrane diffuser plate chamber 22 . This permits supplying a minimum necessary amount of the plating solution to each of the chambers, thus achieving cost reduction by suppressing the plating solution consumption.
- the plating apparatus 1 is provided with the plating solution supply nozzle 16 having outlet ports of nozzle diameter sizes such that the plating solution flows through the anode chamber drain nozzle 14 at a flow rate of 60 to 100 ml/min.
- the plating solution supply nozzle 16 controls the nozzle diameter size of the outlet port for supplying the plating solution to the membrane diffuser plate chamber 22 or controls the nozzle diameter size of the outlet port for supplying the plating solution to the anode chamber 21 .
- the plating solution supply nozzle 16 controls the flow rate through the anode chamber drain nozzle 14 .
- the plating apparatus 1 when the flow rate of the plating solution discharged from the anode chamber drain nozzle 14 is desired to be fixed, can control the flow rate of the plating solution flowing through the anode chamber drain nozzle 14 while suppressing an increase in the facility-related costs. Moreover, providing the flow rate control valve 6 described above permits variably controlling, with higher accuracy, the flow rate of the plating solution flowing through the anode chamber drain nozzle 14 .
- the plurality of embodiments described above can be practiced in combination within the range consistent with the configuration and operation thereof.
- the flow rate control valve of the present invention maybe provided with, for example, a flow meter and thereby may control the valve.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006-117711 | 2006-04-21 | ||
JP2006117711A JP2007291419A (ja) | 2006-04-21 | 2006-04-21 | メッキ処理装置 |
Publications (1)
Publication Number | Publication Date |
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US20070246350A1 true US20070246350A1 (en) | 2007-10-25 |
Family
ID=38618451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/785,754 Abandoned US20070246350A1 (en) | 2006-04-21 | 2007-04-19 | Plating apparatus |
Country Status (2)
Country | Link |
---|---|
US (1) | US20070246350A1 (ja) |
JP (1) | JP2007291419A (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100200403A1 (en) * | 2009-02-09 | 2010-08-12 | Applied Materials, Inc. | Metrology methods and apparatus for nanomaterial characterization of energy storage electrode structures |
WO2013004414A1 (en) * | 2011-07-07 | 2013-01-10 | Nv Bekaert Sa | Distribution plate in electrolyte bath |
US9005409B2 (en) | 2011-04-14 | 2015-04-14 | Tel Nexx, Inc. | Electro chemical deposition and replenishment apparatus |
US9017528B2 (en) | 2011-04-14 | 2015-04-28 | Tel Nexx, Inc. | Electro chemical deposition and replenishment apparatus |
US9303329B2 (en) | 2013-11-11 | 2016-04-05 | Tel Nexx, Inc. | Electrochemical deposition apparatus with remote catholyte fluid management |
US10227705B2 (en) * | 2013-05-09 | 2019-03-12 | Acm Research (Shanghai) Inc. | Apparatus and method for plating and/or polishing wafer |
US20210388523A1 (en) * | 2020-06-15 | 2021-12-16 | Taiwan Semiconductor Manufacturing Company Limited | Plating membrane |
US11427924B1 (en) * | 2021-04-16 | 2022-08-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for electro-chemical plating |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101132092B1 (ko) | 2009-12-14 | 2012-04-04 | 주식회사 케이씨텍 | 기판 도금 장치 |
KR101204666B1 (ko) | 2010-04-16 | 2012-11-26 | 에스케이하이닉스 주식회사 | 웨이퍼 구리 도금 장비 및 방법 |
JP2012007201A (ja) * | 2010-06-23 | 2012-01-12 | Lapis Semiconductor Co Ltd | めっき装置 |
WO2022144985A1 (ja) * | 2020-12-28 | 2022-07-07 | 株式会社荏原製作所 | めっき装置 |
WO2023119347A1 (ja) * | 2021-12-20 | 2023-06-29 | 株式会社荏原製作所 | めっき装置のメンテナンス方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6527920B1 (en) * | 2000-05-10 | 2003-03-04 | Novellus Systems, Inc. | Copper electroplating apparatus |
US6821407B1 (en) * | 2000-05-10 | 2004-11-23 | Novellus Systems, Inc. | Anode and anode chamber for copper electroplating |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001049498A (ja) * | 1999-08-10 | 2001-02-20 | Ebara Corp | めっき装置 |
JP2004353061A (ja) * | 2003-05-30 | 2004-12-16 | Ebara Corp | 電解処理方法及び装置 |
JP2006193822A (ja) * | 2004-12-16 | 2006-07-27 | Sharp Corp | めっき装置、めっき方法、半導体装置、及び半導体装置の製造方法 |
JP4822858B2 (ja) * | 2005-11-22 | 2011-11-24 | 日本エレクトロプレイテイング・エンジニヤース株式会社 | めっき装置 |
-
2006
- 2006-04-21 JP JP2006117711A patent/JP2007291419A/ja active Pending
-
2007
- 2007-04-19 US US11/785,754 patent/US20070246350A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6527920B1 (en) * | 2000-05-10 | 2003-03-04 | Novellus Systems, Inc. | Copper electroplating apparatus |
US6821407B1 (en) * | 2000-05-10 | 2004-11-23 | Novellus Systems, Inc. | Anode and anode chamber for copper electroplating |
US6890416B1 (en) * | 2000-05-10 | 2005-05-10 | Novellus Systems, Inc. | Copper electroplating method and apparatus |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100200403A1 (en) * | 2009-02-09 | 2010-08-12 | Applied Materials, Inc. | Metrology methods and apparatus for nanomaterial characterization of energy storage electrode structures |
WO2010091405A2 (en) * | 2009-02-09 | 2010-08-12 | Applied Materials, Inc. | Metrology methods and apparatus for nanomaterial characterization of energy storage electrode structures |
WO2010091405A3 (en) * | 2009-02-09 | 2010-12-09 | Applied Materials, Inc. | Metrology methods and apparatus for nanomaterial characterization of energy storage electrode structures |
US8192605B2 (en) | 2009-02-09 | 2012-06-05 | Applied Materials, Inc. | Metrology methods and apparatus for nanomaterial characterization of energy storage electrode structures |
US9005409B2 (en) | 2011-04-14 | 2015-04-14 | Tel Nexx, Inc. | Electro chemical deposition and replenishment apparatus |
US9017528B2 (en) | 2011-04-14 | 2015-04-28 | Tel Nexx, Inc. | Electro chemical deposition and replenishment apparatus |
WO2013004414A1 (en) * | 2011-07-07 | 2013-01-10 | Nv Bekaert Sa | Distribution plate in electrolyte bath |
US10227705B2 (en) * | 2013-05-09 | 2019-03-12 | Acm Research (Shanghai) Inc. | Apparatus and method for plating and/or polishing wafer |
US9303329B2 (en) | 2013-11-11 | 2016-04-05 | Tel Nexx, Inc. | Electrochemical deposition apparatus with remote catholyte fluid management |
US20210388523A1 (en) * | 2020-06-15 | 2021-12-16 | Taiwan Semiconductor Manufacturing Company Limited | Plating membrane |
US11814743B2 (en) * | 2020-06-15 | 2023-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Plating membrane |
US11427924B1 (en) * | 2021-04-16 | 2022-08-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for electro-chemical plating |
Also Published As
Publication number | Publication date |
---|---|
JP2007291419A (ja) | 2007-11-08 |
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