US20070228593A1 - Residual Layer Thickness Measurement and Correction - Google Patents

Residual Layer Thickness Measurement and Correction Download PDF

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Publication number
US20070228593A1
US20070228593A1 US11/694,017 US69401707A US2007228593A1 US 20070228593 A1 US20070228593 A1 US 20070228593A1 US 69401707 A US69401707 A US 69401707A US 2007228593 A1 US2007228593 A1 US 2007228593A1
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United States
Prior art keywords
substrate
imprint
drops
residual layer
layer
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Abandoned
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US11/694,017
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English (en)
Inventor
Christopher Jones
Niyaz Khusnatdinov
Stephen Johnson
Philip Schumaker
Pankaj Lad
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Canon Nanotechnologies Inc
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Molecular Imprints Inc
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Publication date
Application filed by Molecular Imprints Inc filed Critical Molecular Imprints Inc
Priority to US11/694,017 priority Critical patent/US20070228593A1/en
Assigned to MOLECULAR IMPRINTS, INC. reassignment MOLECULAR IMPRINTS, INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: JOHNSON, STEPHEN C., MR., JONES, CHRISTOPHER E., MR., KHUSNATDINOV, NIYAZ, MR., SCHUMAKER, PHILIP D., MR., LAD, PANKAJ B., MR.
Publication of US20070228593A1 publication Critical patent/US20070228593A1/en
Priority to US12/835,009 priority patent/US8647554B2/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/003—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor characterised by the choice of material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32—Component parts, details or accessories; Auxiliary operations
    • B29C43/58—Measuring, controlling or regulating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/02—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles
    • B29C43/021—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface
    • B29C2043/023—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves
    • B29C2043/025—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor of articles of definite length, i.e. discrete articles characterised by the shape of the surface having a plurality of grooves forming a microstructure, i.e. fine patterning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32—Component parts, details or accessories; Auxiliary operations
    • B29C43/58—Measuring, controlling or regulating
    • B29C2043/5825—Measuring, controlling or regulating dimensions or shape, e.g. size, thickness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
    • B29C43/32—Component parts, details or accessories; Auxiliary operations
    • B29C43/58—Measuring, controlling or regulating
    • B29C2043/5891—Measuring, controlling or regulating using imaging devices, e.g. cameras

Definitions

  • Nano-fabrication involves the fabrication of very small structures, e.g., having features on the order of nanometers or smaller.
  • One area in which nano-fabrication has had a sizeable impact is in the processing of integrated circuits.
  • nano-fabrication becomes increasingly important. Nano-fabrication provides greater process control while allowing increased reduction of the minimum feature dimension of the structures formed.
  • Other areas of development in which nano-fabrication has been employed include biotechnology, optical technology, mechanical systems and the like.
  • An exemplary nano-fabrication technique is commonly referred to as imprint lithography.
  • Exemplary imprint lithography processes are described in detail in numerous publications, such as United States patent application publication 2004/0065976 filed as U.S. patent application Ser. No. 10/264,960, entitled, “Method and a Mold to Arrange Features on a Substrate to Replicate Features having Minimal Dimensional Variability”; United States patent application publication 2004/0065252 filed as U.S. patent application Ser. No. 10/264,926, entitled “Method of Forming a Layer on a Substrate to Facilitate Fabrication of Metrology Standards”; and U.S. Pat. No. 6,936,194, entitled “Functional Patterning Material for Imprint Lithography Processes,” all of which are assigned to the assignee of the present invention.
  • Imprint lithography disclosed in each of the aforementioned United States patent application publications and United States patent includes formation of a relief pattern in a polymerizable layer and transferring a pattern corresponding to the relief pattern into an underlying substrate.
  • the substrate may be positioned upon a motion stage to obtain a desired position to facilitate patterning thereof.
  • a template is employed spaced-apart from the substrate with a formable liquid present between the template and the substrate.
  • the liquid is solidified to form a solidified layer that has a pattern recorded therein that is conforming to a shape of the surface of the template in contact with the liquid.
  • the template is then separated from the solidified layer such that the template and the substrate are spaced-apart.
  • the substrate and the solidified layer are then subjected to processes to transfer, into the substrate, a relief image that corresponds to the pattern in the solidified layer.
  • the solidified layer may comprise a residual layer of material, i.e., a contiguous layer.
  • Residual layer thickness (RLT) and residual layer thickness uniformity are key metrics for evaluating the quality of imprinted wafers.
  • a plasma etch step directly follows imprinting.
  • Film thickness uniformity requirements for plasma etching are well known in the field.
  • RLT uniformity determines the film thickness uniformity of imprinted samples to be etched.
  • residual layer thickness uniformity is evaluated using the unaided eye to look at fringe patterns. To that end, there is no quantitative feedback to improve the residual layer uniformity once the liquid is positioned between the template and the substrate.
  • FIG. 1 is a simplified side view of a lithographic system having a template spaced-apart from a substrate;
  • FIG. 2 illustrates a residual layer
  • FIG. 3 is a simplified elevation view of a film thickness measurement tool proximate the substrate, shown in FIG. 1 ;
  • FIG. 4 illustrates an image taken by the thickness measurement tool, shown in FIG. 3 ;
  • FIG. 5 is simplified three dimensional representation of the image, shown in FIG. 4 ;
  • FIG. 6 is a top down view of the substrate having a drop pattern positioned thereon;
  • FIGS. 7A-7D illustrate exemplary steps for addressing a non-uniform residual layer
  • FIG. 8 illustrates a process for compensating for a non-uniform residual layer.
  • a system 8 to form a relief pattern on a substrate 12 includes a stage 10 upon which substrate 12 is supported and a template 14 , having a patterning surface 18 thereon.
  • substrate 12 may be coupled to a substrate chuck (not shown), the substrate chuck (not shown) being any chuck including, but not limited to, vacuum and electromagnetic.
  • Template 14 and/or mold 16 may be formed from such materials including but not limited to, fused-silica, quartz, silicon, organic polymers, siloxane polymers, borosilicate glass, fluorocarbon polymers, metal, and hardened sapphire.
  • patterning surface 18 comprises features defined by a plurality of spaced-apart recesses 17 and protrusions 19 .
  • patterning surface 18 may be substantially smooth and/or planar. Patterning surface 18 may define an original pattern that forms the basis of a pattern to be formed on substrate 12 .
  • Template 14 may be coupled to an imprint head 20 to facilitate movement of template 14 , and therefore, mold 16 .
  • template 14 may be coupled to a template chuck (not shown), the template chuck (not shown) being any chuck including, but not limited to, vacuum and electromagnetic.
  • a fluid dispense system 22 is coupled to be selectively placed in fluid communication with substrate 12 so as to deposit polymeric material 24 thereon. It should be understood that polymeric material 24 may be deposited using any known technique, e.g., drop dispense, spin-coating, dip coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), and the like.
  • a source 26 of energy 28 is coupled to direct energy 28 along a path 30 .
  • Imprint head 20 and stage 10 are configured to arrange mold 16 and substrate 12 , respectively, to be in superimposition and disposed in path 30 . Either imprint head 20 , stage 10 , or both vary a distance between mold 16 and substrate 12 to define a desired volume therebetween that is filled by polymeric material 24 .
  • polymeric material 24 is disposed upon substrate 12 before the desired volume is defined between mold 16 and substrate 12 .
  • polymeric material 24 may fill the volume after the desired volume has been obtained.
  • source 26 produces energy 28 , e.g., broadband energy that causes polymeric material 24 to solidify and/or cross-link conforming to the shape of a surface 25 of substrate 12 and patterning surface 18 , defining a patterned layer 50 on substrate 12 having a contiguous formation of polymeric material 24 over surface 25 .
  • patterned layer 50 comprises sub-portions 34 a and 34 b , with sub-portions 34 b being in superimposition with protrusions 19 , with sub-portions 34 a having a thickness t 1 and sub-portions 34 b having a thickness t 2 , with sub-portions 34 b commonly referred to as the residual layer.
  • Thicknesses t 1 and t 2 may be any thickness desired, dependent upon the application.
  • the broadband energy may comprise an actinic component including, but not limited to, ultraviolet wavelengths, thermal energy, electromagnetic energy, visible light and the like.
  • the actinic component employed is known to one skilled in the art and typically depends on the material from which imprinting layer 12 is formed. Control of this process is regulated by a processor 32 that is in data communication with stage 10 , imprint head 20 , fluid dispense system 22 , source 26 , operating on a computer readable program stored in memory 34 .
  • System 8 may further include a film thickness measurement tool 60 coupled with the substrate chuck (not shown), described further below. Film thickness measurement tool 60 may comprise an optical detection system, and further may be in data communication with processor 32 . Film thickness measurement tool 60 may be a stand alone tool commonly used in semiconductor fabrication. Such tools are commercially available from Metrosol, Inc., Filmetrics, Rudolph Technologies, and J. A. Woolam.
  • Patterned layer 50 may have variations among thicknesses t 2 , which may be undesirable. More specifically, minimizing, if not preventing, variations among sub-portions 34 b , and thus, the residual layer may result in improved control of the critical dimension of pattered layer 50 , which may be desired. In an example, it may be desirable to reduce variations among sub-portions 34 b below the approximately 30 nm level seen in typical imprints in order to minimize, if not prevent, the impact to etched feature critical dimension.
  • variations in thicknesses t 2 of sub-portions 34 b may be measured generating measured data, with the measured data facilitating a design in positioning of polymeric material 24 upon substrate 12 .
  • polymeric material 24 is positioned as a plurality of droplets upon substrate 12 , and thus, the measured data facilitates a design in the drop pattern of polymeric material 24 .
  • uniformity in thicknesses t 2 of the sub-portions 34 b may be achieved.
  • the variations in thicknesses t 2 of sub-portions 34 b may be measured at a plurality of points employing film thickness measurement tool 60 , with the optical detection system digitizing imprinted fields, i.e., patterned layer 50 , and subsequently employing processor 32 operating on a computer readable program stored in memory 34 to analyze said imprinted fields to construct a map of the thickness t 2 of sub-portions 34 b across patterned layer 50 .
  • the drop pattern of polymeric material 24 may be varied, i.e., droplets may be added or subtracted, the drop offset may be varied, individual drop volumes of the plurality of drops, based upon the variations in thickness t 2 of sub-portions 34 b to generate a drop pattern that may facilitate patterned layer 50 comprising sub-portions 34 b having a desired thickness uniformity.
  • film thickness measurement tool 60 may be positioned at a fixed angle and distance from substrate 12 , with the distance from the imprint field, i.e., patterned layer 50 , to film thickness measurement tool 60 being calculated.
  • a calibration process may be required to obtain accurate dimensions of the imprint field.
  • An alternative method for measuring the residual layer thickness measures the optical properties of the film, such as reflected intensity versus wavelength or circular versus elliptical polarization of light reflected from the field. These spectroscopic measurements are then fit to a model of the film stack to determine parameters of interest such as film thickness. Such a process can be implemented using the commercially available film thickness measurement tools noted above.
  • processor 32 operating on a computer readable program stored in memory 34 may employ an algorithm to convert the image into a square (or, rectangle, circular, etc.) imprint area. Subsequently, processor 32 may convert differences in color and shade grades into a Z-height profile of the imprint field.
  • FIG. 5 shows an example of a three-dimensional representation of the field shown in FIG. 4 .
  • the computer readable program stored in memory 34 may comprise a program entitled ImageJ available from http://rsb.info.nih.gov/ij/.
  • the slope g(x,y) will be used to calculate the offsets in X and Y directions of the drop pattern.
  • Deviation function w(x,y) will be used to control local unit fluid volume; number of drops, position of drops and drop volume itself.
  • FIG. 6 shows an exemplary drop pattern of polymeric material 24 used for imprinting that produced a desired thickness profile shown on FIG. 5 .
  • various drop patterns can be generated on the substrate, such as a uniform grid superimposed with localized compensating drops.
  • the drop pattern on FIG. 6 corresponds to the following drop matrix, M(x,y):
  • FIGS. 7A-7D and 8 A process for obtaining a uniform residual layer thickness (RLT) is illustrated in FIGS. 7A-7D and 8 .
  • the imprint tool is calibrated to determine how much fluid to dispense to make an imprint with a desired thickness.
  • a uniform distribution of fluid is deposited on the substrate as illustrated in FIG. 7A .
  • An imprint is performed. Evaporation and other non-uniformities may cause the RLT to be non-uniform.
  • RLT uniformity is measured across a dense array of points in the imprinted field using the film thickness measurement tool 60 .
  • step 804 if a desired uniformity is achieved, then the process may end in step 805 . If not (see FIG.
  • step 806 the process proceeds to step 806 , where one of the above algorithms is employed, such as in software running in processor 32 , to calculate a new corrected drop pattern, which will add drops, or increase drop size, to thin areas and/or remove drops, or decrease drop size, from thick areas to achieve improved RLT uniformity.
  • the process then returns to step 802 to make a new imprint using the corrected drop pattern (see FIG. 7C ), and steps 803 and 804 are performed again. This process may be repeated as needed until a desired uniformity RLT is achieved, as illustrated in FIG. 7D .
  • This above-mentioned method may be employed to obtain a desired volume of polymeric fluid 24 positioned upon substrate 12 to the volume of features (protrusions 17 and recesses 19 ) in mold 16 .
  • the above-mentioned method may be employed to compensate for evaporation in the plurality of droplets of polymeric material 24 after positioning the same upon substrate 12 and prior to contact with mold 16 .
  • matching a volume of polymeric material 24 upon substrate 12 to the volume of features in mold 16 result in improved residual layer uniformity, i.e., variations among thicknesses t 2 of sub-portions 34 b .
  • This improved residual layer uniformity enables better control of feature CDs across imprinted and etched wafers.
  • the above-mentioned may also minimize, if not reduce, and impact of faceting during a breakthrough etch of the residual layer.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
US11/694,017 2004-06-15 2007-03-30 Residual Layer Thickness Measurement and Correction Abandoned US20070228593A1 (en)

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US11/694,017 US20070228593A1 (en) 2006-04-03 2007-03-30 Residual Layer Thickness Measurement and Correction
US12/835,009 US8647554B2 (en) 2004-06-15 2010-07-13 Residual layer thickness measurement and correction

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US11/694,017 US20070228593A1 (en) 2006-04-03 2007-03-30 Residual Layer Thickness Measurement and Correction

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Cited By (40)

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US20070231981A1 (en) * 2006-04-03 2007-10-04 Molecular Imprints, Inc. Patterning a Plurality of Fields on a Substrate to Compensate for Differing Evaporation Times
US20070246850A1 (en) * 2006-04-21 2007-10-25 Molecular Imprints, Inc. Method for Detecting a Particle in a Nanoimprint Lithography System
US20080174046A1 (en) * 2002-07-11 2008-07-24 Molecular Imprints Inc. Capillary Imprinting Technique
US20090014917A1 (en) * 2007-07-10 2009-01-15 Molecular Imprints, Inc. Drop Pattern Generation for Imprint Lithography
US20090115110A1 (en) * 2007-11-02 2009-05-07 Molecular Imprints, Inc. Drop Pattern Generation for Imprint Lithography
US20090148619A1 (en) * 2007-12-05 2009-06-11 Molecular Imprints, Inc. Controlling Thickness of Residual Layer
US20090200710A1 (en) * 2008-02-08 2009-08-13 Molecular Imprints, Inc. Extrusion reduction in imprint lithography
US20090267268A1 (en) * 2007-10-02 2009-10-29 Ikuo Yoneda Imprint system and imprint method
US20100012622A1 (en) * 2008-06-09 2010-01-21 Board Of Regents, The University Of Texas Adaptive Nanotopography Sculpting
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US20100098859A1 (en) * 2008-10-21 2010-04-22 Molecular Imprints, Inc. Drop Pattern Generation with Edge Weighting
WO2010047758A1 (fr) * 2008-10-21 2010-04-29 Molecular Imprints, Inc. Optimisation robuste permettant de générer des motifs de goutte en lithographie d’impression
US20100101493A1 (en) * 2008-10-27 2010-04-29 Molecular Imprints, Inc. Dispense System
US20100104747A1 (en) * 2008-10-28 2010-04-29 Molecular Imprints, Inc. Drop Deposition Control
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US20100237045A1 (en) * 2009-03-19 2010-09-23 Takeshi Koshiba Pattern forming method
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US20130020281A1 (en) * 2010-03-30 2013-01-24 Fujifilm Corporation Nanoimprinting method, method for producing a droplet arrangement pattern, and method for fabricating substrates
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US8826847B2 (en) 2011-02-15 2014-09-09 Kabushiki Kaisha Toshiba Imprinting apparatus, imprinting method, and manufacturing method of uneven plate
US20150116687A1 (en) * 2013-10-31 2015-04-30 Kabushiki Kaisha Toshiba Microprocessing system, microprocessing apparatus, and microprocessing method
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US20150234287A1 (en) * 2014-02-17 2015-08-20 Kabushiki Kaisha Toshiba Resist placing method and resist placing program
US20160291485A1 (en) * 2015-03-31 2016-10-06 Canon Kabushiki Kaisha Imprinting apparatus, imprinting method, and article manufacturing method
US20160288404A1 (en) * 2015-03-31 2016-10-06 Canon Kk Imprint apparatus, imprint method, and method of manufacturing article
KR20160117322A (ko) * 2015-03-31 2016-10-10 캐논 가부시끼가이샤 임프린트 장치, 재료 분포에 관한 데이터 작성 방법, 임프린트 방법 및 제품 제조 방법
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US10150231B2 (en) 2012-04-27 2018-12-11 Canon Kabushiki Kaisha Method for manufacturing photo cured material
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WO2008066562A2 (fr) 2008-06-05
US8647554B2 (en) 2014-02-11

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