US20070130716A1

US20070130716A1 - Substrate processing apparatus and substrate processing method

Info

Publication number: US20070130716A1
Application number: US11/610,221
Authority: US
Inventors: Kunio Yamada; Takashi Hara
Original assignee: Individual
Current assignee: Dainippon Screen Manufacturing Co Ltd
Priority date: 2005-12-14
Filing date: 2006-12-13
Publication date: 2007-06-14
Also published as: JP2007165661A

Abstract

A substrate processing apparatus comprises a multifunctional nozzle having a double-pipe structure. An inner flow path of the multifunctional nozzle is connected to a first supply suction system through a supply suction pipe. An outer flow path is connected to a second supply suction system through the supply suction pipe. The first supply suction system and the second supply suction system have respectively chemical liquid supply sources, rinse liquid supply sources, inert gas supply sources, and ejectors. Such a configuration makes it possible to selectively supply the chemical liquid, supply the rinse liquid, and supply the inert gas and suck in through the inner flow path and the outer flow path of the multifunctional nozzle.

Description

BACKGROUND OF THE INVENTION

1. Field of the Invention
The present invention relates to a substrate processing apparatus and a substrate processing method that subject a substrate to predetermined processing.
2. Description of the Background Art
Substrate processing apparatuses have been conventionally used to subject various types of substrates such as semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, and glass substrates for optical disks, and other substrates to various types of processing.
In the substrate processing apparatuses, a chemical liquid using BHF (buffered hydrofluoric acid), DHF (dilute hydrofluoric acid), hydrofluoric acid, hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, acetic acid, oxalic acid, ammonia, or the like is supplied to the substrate, to subject the substrate to surface processing (hereinafter referred to as chemical liquid processing).
In the substrate processing apparatus that performs the chemical liquid processing, a deposit of the chemical liquid adheres to a tip portion of a nozzle for supplying the chemical liquid to the substrate. The deposit of the chemical liquid is formed by supplying the chemical liquid to the substrate using the nozzle and then drying the chemical liquid adhering to the tip portion of the nozzle.
This phenomenon easily occurs when a chemical liquid containing a salt, e.g., a solution mixture of ammonium fluoride and hydrofluoric acid (BHF) or a solution mixture of ammonium fluoride and phosphoric acid is used.
In a substrate processing apparatus that individually supplies an acid chemical liquid and an alkali chemical liquid to a substrate, when nozzles for respectively supplying the chemical liquids are arranged in close proximity to each other, components of the chemical liquids respectively adhering to the nozzles may be diffused into a peripheral atmosphere to react with each other, thereby producing a salt. In this case, a deposit is liable to adhere to tip portions of the nozzles.
The deposit adhering to the tip portion of the nozzle grows as the chemical liquid is supplied to the substrate. In this case, the deposit that has grown drops on the substrate from the nozzle, or the supply conditions of the chemical liquid supplied from the nozzle to the substrate are changed so that processing defects occur in the substrate.
In order to remove the deposit adhering to the tip portion of the nozzle, there is a chemical liquid supply nozzle with a nozzle cleaning mechanism that can uniformly clean a tip portion of a nozzle (see, e.g., JP 6--44137, U).
The chemical liquid supply nozzle with a nozzle cleaning mechanism comprises a nozzle block having a through hole formed therein as the nozzle cleaning mechanism. The nozzle is inserted into the through hole of the nozzle block, thereby causing a gap to be formed between an outer peripheral surface of the nozzle and an inner peripheral surface of the nozzle block.
After supplying the chemical liquid to the substrate, the nozzle is inserted into the nozzle block, so that a cleaning liquid is supplied to the gap between the nozzle and the nozzle block. This causes the cleaning liquid flowing into the gap between the nozzle and the nozzle block to flow into the tip portion of the nozzle, so that the chemical liquid adhering to the tip portion of the nozzle is cleaned away. As a result, the deposit is prevented from adhering to the tip portion of the nozzle.
Even if the nozzle is cleaned with the cleaning liquid, as described above, however, the chemical liquid may slightly remain on a surface of the nozzle. In this case, a part of the chemical liquid is mixed into the cleaning liquid remaining on the main surface of the nozzle after the cleaning, and a crystal of the chemical liquid is deposited on the nozzle as the cleaning liquid is dried. As a result, the problems that the deposit drops on the substrate and the supply conditions of the chemical liquid are changed are not sufficiently solved.

SUMMARY OF THE INVENTION

An object of the invention is to provide a substrate processing apparatus and a substrate processing method in which processing defects in a substrate due to a deposit formed on a nozzle are sufficiently prevented.
(1) A substrate processing apparatus according to an aspect of the present invention comprises a nozzle that has a first flow path having a first end opening and a second flow path having a second end opening adjacent to the first end opening and discharges a chemical liquid for processing a substrate from the first end opening; a chemical liquid supply system that is connected to the first flowpath and supplies the chemical liquid; and a suction device that is connected to the second flow path and applies suction through the second flow path.
In the substrate processing apparatus, the nozzle has the first flow path having the first end opening and the second flow path having the second end opening. The first end opening of the first flow path and the second end opening of the second flow path are adjacent to each other. The chemical liquid is supplied to the first flow path from the chemical liquid supply system, and is discharged from the first end opening. Further, the suction device applies suction through the second flow path.
In this case, the chemical liquid remaining in the vicinity of the first end opening is sucked in through the second flow path. This prevents the chemical liquid from remaining in the vicinity of the first end opening.
In a case where a deposit of the chemical liquid is formed in the first flow path, the chemical liquid is discharged through the first flow path from the chemical liquid supply system, and suction is applied through the second flow path, which causes the deposit of the chemical liquid to be cleaned away with the chemical liquid and can prevent the chemical liquid from remaining in the vicinity of the first end opening.
This prevents the deposit of the chemical liquid from being formed in the vicinity of the first end opening and prevents the formed deposit from remaining. As a result, processing defects in the substrate due to the deposit of the chemical liquid are sufficiently prevented.
(2) The suction device may apply suction through the second flow path after the discharge of the chemical liquid through the first flow path from the chemical liquid supply system is completed.
In this case, the chemical liquid is discharged through the first flow path from the chemical liquid supply system, which causes the deposit in the first flow path to be cleaned away with the chemical liquid. Further, suction is applied through the second flow path, which can prevent the chemical liquid from remaining in the vicinity of the first end opening.
This prevents the deposit of the chemical liquid from being formed in the vicinity of the first end opening and prevents the formed deposit from remaining.
(3) The suction device may apply suction through the second flow path in a time period during which the chemical liquid is discharged through the first flow path from the chemical liquid supply system.
In this case, at least a part of the chemical liquid is sucked in through the second flow path while the chemical liquid is discharged through the first flow path. This causes the deposit in the first flow path to be cleaned away with the chemical liquid and can prevent the chemical liquid from remaining in the vicinity of the first end opening. The result prevents the deposit of the chemical liquid from being formed in the vicinity of the first end opening and prevents the formed deposit from remaining.
(4) The substrate processing apparatus may further comprise a first guide member that is opposed to the first end opening and the second end opening and guides into the second end opening the chemical liquid discharged through the first flow path.
In this case, the chemical liquid discharged through the first flow path is guided into the second end opening by the first guide member. This makes it easy to suck in the discharged chemical liquid through the second flow path.
(5) The substrate processing apparatus may further comprise an inert gas supply system that is connected to the first flow path and supplies an inert gas.
In this case, the inert gas is discharged through the first flow path from the inert gas supply system. Thus, the chemical liquid remaining in the first flow path is discharged outward with the inert gas.
In a case where the deposit of the chemical liquid is formed in the first flow path, the deposit of the chemical liquid can be removed by discharging the inert gas through the first flow path from the inert gas supply system.
The result prevents the deposit of the chemical liquid from being formed in the vicinity of the first end opening and prevents the formed deposit from remaining.
(6) The inert gas may be discharged through the first flow path from the inert gas supply system after the discharge of the chemical liquid through the first flow path from the chemical liquid supply system is completed.
In this case, the chemical liquid is discharged through the first flow path from the chemical liquid supply system, so that the deposit in the first flow path is cleaned away with the chemical liquid. Thereafter, the chemical liquid remaining in the first flow path is discharged outward with the inert gas. As a result, the deposit of the chemical liquid is prevented from being formed in the vicinity of the first end opening.
(7) The suction device may apply suction through the second flow path in a time period during which the inert gas is discharged through the first flow path from the inert gas supply system.
In this case, at least a part of the inert gas is sucked in through the second flow path while the inert gas is discharged through the first flow path. This causes the deposit and the chemical liquid in the first flow path to be discharged outward with the inert gas while suction is applied through the second flow path. The result prevents the deposit of the chemical liquid from being formed in the vicinity of the first end opening or prevents the formed deposit from remaining. Further, the second flow path is kept clean.
(8) The substrate processing apparatus may further comprise an inert gas supply system that is connected to the second flow path and supplies an inert gas.
In this case, the inert gas is discharged through the second flow path from the inert gas supply system. Thus, the chemical liquid remaining in the vicinity of the first end opening is discharged outward with the inert gas.
In a case where the deposit of the chemical liquid is formed in the vicinity of the first end opening, the deposit of the chemical liquid can be removed by discharging the inert gas through the second flowpath from the inert gas supply system.
The result prevents the deposit of the chemical liquid from being formed in the vicinity of the first end opening and prevents the formed deposit from remaining.
Since the chemical liquid and the inert gas are respectively discharged through the separate flow paths, the mixing of the chemical liquid into the inert gas is restrained. This allows the inert gas discharged from the nozzle to be used for subjecting the substrate to drying processing. As a result, it is not necessary to separately provide means for performing drying processing, thereby simplifying the configuration of the substrate processing apparatus.
(9) The substrate processing apparatus may further comprise a rinse liquid supply system that is connected to the first flow path and supplies a rinse liquid.
In this case, the rinse liquid is discharged through the first flowpath from the rinse liquid supply system. This causes the chemical liquid remaining in the first flow path to be cleaned away with the rinse liquid.
In a case where the deposit of the chemical liquid is formed in the first flow path, the deposit of the chemical liquid can be removed by discharging the rinse liquid through the first flow path from the rinse liquid supply system.
The result prevents the deposit of the chemical liquid from being formed in the vicinity of the first end opening or prevents the formed deposit from remaining.
(10) The rinse liquid may be discharged through the first flow path from the rinse liquid supply system after the discharge of the chemical liquid through the first flow path from the chemical liquid supply system is completed.
In this case, the chemical liquid is discharged through the first flow path from the chemical liquid supply system, so that the deposit in the first flow path is cleaned away with the chemical liquid. Thereafter, the chemical liquid remaining in the first flow path is cleaned away with the rinse liquid. The result prevents the deposit of the chemical liquid from being formed in the vicinity of the first end opening or prevents the formed deposit from remaining.
(11) The suction device may apply suction through the second flow path in a time period during which the rinse liquid is discharged through the first flow path from the rinse liquid supply system.
In this case, at least a part of the rinse liquid is sucked in through the second flow path while the rinse liquid is discharged through the first flow path. This causes the deposit and the chemical liquid in the first flow path and the second flow path to be cleaned away with the rinse liquid.
The result prevents the deposit of the chemical liquid from being formed in the vicinity of the first end opening or prevents the formed deposit from remaining.
(12) The substrate processing apparatus may further comprise a second guide member that is opposed to the first end opening and the second end opening and guides into the second end opening the rinse liquid discharged through the first flow path.
In this case, the rinse liquid discharged through the first flow path is guided into the second end opening by the second guide member. This makes it easy to suck in the discharged rinse liquid through the second flow path.
(13) The substrate processing apparatus may further comprise a rinse liquid supply system that is connected to the second flow path and supplies a rinse liquid.
In this case, the rinse liquid is discharged through the second flow path from the rinse liquid supply system. This causes the chemical liquid remaining in the vicinity of the first end opening of the first flow path to be cleaned away with the rinse liquid.
In a case where the deposit of the chemical liquid is formed in the vicinity of the first end opening, the deposit of the chemical liquid can be removed by discharging the rinse liquid through the second flow path from the rinse liquid supply system.
The result prevents the deposit of the chemical liquid from being formed in the vicinity of the first end opening or prevents the formed deposit from remaining.
Since the chemical liquid and the rinse liquid are respectively discharged through the separate flow paths, the mixing of the chemical liquid into the rinse liquid is restrained. If pure water is used as the rinse liquid discharged from the nozzle, therefore, the rinse liquid can be used for subjecting the substrate to rinsing processing. As a result, it is not necessary to separately provide means for performing rinsing processing is eliminated, thereby simplifying the configuration of the substrate processing apparatus.
(14) The substrate processing apparatus may further comprise an inert gas supply system that is connected to the first flow path and supplies an inert gas, and a rinse liquid supply system that is connected to the first flow path and supplies a rinse liquid, the suction device may apply suction through the second flow path in a time period during which the chemical liquid is discharged through the first flow path from the chemical liquid supply system, the suction device may apply suction through the second flow path in a time period during which the rinse liquid is discharged through the first flow path from the rinse liquid supply system, and the suction device may apply suction through the second flow path in a time period during which an inert gas is discharged through the first flow path from the inert gas supply system.
In this case, a part of the chemical liquid is sucked in through the second flow path while the chemical liquid is discharged through the first flow path. This causes the deposit in the first flow path and the second flow path to be cleaned away with the chemical liquid and can prevent the chemical liquid from remaining in the vicinity of the first and second end openings.
A part of the rinse liquid is sucked in through the second flow path while the rinse liquid is discharged through the first flow path. This causes the chemical liquid remaining in the first flow path and the second flow path to be cleaned away with the rinse liquid.
Furthermore, a part of the inert gas is sucked in through the second flow path while the inert gas is discharged through the first flow path. This causes the chemical liquid or the rinse liquid remaining in the first flow path to be discharged outward with the inert gas and causes the chemical liquid or the rinse liquid remaining in the second flow path to be sucked in.
This allows the first and the second flow paths of the nozzle to be subjected to the rinsing processing and the drying processing. The result prevents the deposit of the chemical liquid from being formed in the vicinity of the first end opening and prevents the formed deposit from remaining.
(15) A substrate processing apparatus according to another aspect of the present invention comprises a nozzle that has a first flow path having a first end opening and a second flow path having a second end opening adjacent to the first end opening and discharges a chemical liquid for processing a substrate from the first end opening; a chemical liquid supply system that is connected to the first flow path and supplies the chemical liquid; a suction device that is connected to the first flow path and applies suction through the first flow path; and an inert gas supply system that is connected to the second flow path and supplies an inert gas.
In the substrate processing apparatus, the nozzle has the first flow path having the first end opening and the second flow path having the second end opening. The first end opening of the first flow path and the second end opening of the second flow path are adjacent to each other. The chemical liquid is supplied to the first flow path from the chemical liquid supply system, and the chemical liquid is discharged from the first end opening. The inert gas is discharged through the second flow path from the inert gas supply system. Further, the suction device applies suction through the first flow path.
In this case, the chemical liquid remaining within the first flow path or in the vicinity of the first end opening is sucked in through the first flow path. This prevents the chemical liquid from remaining within the first flow path or in the vicinity of the first end opening.
In a case where a deposit of the chemical liquid is formed within the first flow path or in the vicinity of the first end opening, the chemical liquid is discharged through the first flow path from the chemical liquid supply system, and suction is applied through the first flow path, which causes the deposit of the chemical liquid to be cleaned away with the chemical liquid and can prevent the chemical liquid from remaining within the first flow path or in the vicinity of the first end opening.
The inert gas is discharged through the second flow path from the inert gas supply system. This causes the chemical liquid remaining in the vicinity of the first end opening to be discharged outward with the inert gas.
This prevents the deposit of the chemical liquid from being formed in the vicinity of the first end opening and prevents the formed deposit from remaining. As a result, processing defects in the substrate due to the deposit of the chemical liquid are sufficiently prevented.
Since the chemical liquid and the inert gas are respectively discharged through the separate flow paths, the mixing of the chemical liquid into the inert gas can be restrained. This allows the inert gas discharged from the nozzle to be used for subjecting the substrate to drying processing. As a result, it is not necessary to separately provide means for performing drying processing is eliminated, thereby simplifying the configuration of the substrate processing apparatus.
(16) The substrate processing apparatus may further comprise a rinse liquid supply system that is connected to at least one of the first flow path and the second flow path and supplies a rinse liquid.
In this case, the rinse liquid is discharged through at least one of the first flow path and the second flow path from the rinse liquid supply system. This causes the chemical liquid in at least one of the flow paths to be cleaned away with the rinse liquid. As a result, the deposit of the chemical liquid is prevented from being formed in the vicinity of the end opening of at least one of the flow paths.
In a case where the deposit of the chemical liquid is formed in at least one of the flow paths, the deposit of the chemical liquid can be cleaned away by discharging the rinse liquid through at least one of the flow paths from the rinse liquid supply system.
(17) A substrate processing apparatus according to still another aspect of the present invention comprises a nozzle that has a first flow path having a first end opening and a second flow path having a second end opening adjacent to the first end opening and discharges a chemical liquid for processing a substrate from the first end opening; a chemical liquid supply system that is connected to the first flow path and supplies the chemical liquid; a suction device that is connected to the first flow path and applies suction through the first flow path; and a rinse liquid supply system that is connected to the second flow path and supplies a rinse liquid.
In the substrate processing apparatus, the nozzle has the first flow path having the first end opening and the second flow path having the second end opening. The first end opening of the first flow path and the second end opening of the second flow path are adjacent to each other. The chemical liquid is supplied to the first flow path from the chemical liquid supply system, and the chemical liquid is discharged from the first end opening. The rinse liquid is supplied to the second flow path from the rinse liquid supply system, and the rinse liquid is discharged from the second end opening. Further, the suction device applies suction through the first flow path.
In this case, the chemical liquid remaining within the first flow path or in the vicinity of the first end opening is sucked in through the first flow path. This prevents the chemical liquid from remaining within the first flow path or in the vicinity of the first end opening.
In a case where a deposit of the chemical liquid is formed within the first flow path or in the vicinity of the first end opening, the chemical liquid is discharged through the first flow path from the chemical liquid supply system, and suction is applied through the first flow path, which causes the deposit of the chemical liquid to be cleaned away with the chemical liquid and can prevent the chemical liquid from remaining within the first flow path or in the vicinity of the first end opening.
The rinse liquid is discharged through the second flow path from the rinse liquid supply system. This causes the chemical liquid remaining in the vicinity of the first end opening to be cleaned away with the rinse liquid.
This prevents the deposit of the chemical liquid from being formed in the vicinity of the first end opening and prevents the formed deposit from remaining. As a result, processing defects in the substrate due to the deposit of the chemical liquid are sufficiently prevented.
Since the chemical liquid and the rinse liquid are respectively discharged through the separate flow paths, the mixing of the chemical liquid into the rinse liquid can be restrained. If pure water is used as the rinse liquid discharged from the nozzle, therefore, the rinse liquid can be used for subjecting the substrate to rinsing processing. As a result, it is not necessary to separately provide means for performing rinsing processing is eliminated, thereby simplifying the configuration of the substrate processing apparatus.
(18) The substrate processing apparatus may further comprise an inert gas supply system that is connected to at least one of the first flow path and the second flow path and supplies an inert gas.
In this case, the inert gas is discharged through at least one of the first flow path and the second flow path from the inert gas supply system. Thus, the chemical liquid or the rinse liquid remaining in at least one of the flow paths is removed with the inert gas. As a result, the deposit of the chemical liquid is prevented from being formed in the vicinity of the end opening of at least one of the flow paths.
In a case where the deposit of the chemical liquid is formed in at least one of the flow paths, the deposit of the chemical liquid can be removed by discharging the inert gas through at least one of the flow paths from the inert gas supply system.
(19) Either one of the first end opening and the second end opening may be provided so as to surround the other end opening.
In this case, the chemical liquid or the deposit in the vicinity of one of the end openings positioned at the center can be reliably sucked in by applying suction through either one of the first and second flow paths. The chemical liquid discharged through the first flow path is easily sucked in through the second flow path.
(20) Either one of the first flow path and the second flow path may be formed within a tubular first member, and the other flow path may be formed between the first member and a tubular second member having an inner peripheral surface surrounding an outer peripheral surface of the first member.
In this case, the chemical liquid or the deposit of the chemical liquid adhering to the outer peripheral surface of the first member can be removed by applying suction through one of the first and second flow paths formed between the second member and the first member.
(21) A tip of the second member may project farther than a tip of the first member. In this case, the chemical liquid or the deposit in the vicinity of one of the end openings positioned at the center can be reliably sucked in by applying suction through either one of the first and second flow paths. The chemical liquid discharged through the first flow path is easily sucked in through the second flow path.
(22) The second member may be so formed that the inner peripheral surface at its tip portion progressively comes closer to the outer peripheral surface of the first member toward its tip.
In this case, the chemical liquid or the deposit in the vicinity of one of the end openings positioned at the center can be more reliably sucked in by applying suction through either one of the first and second flow paths. The chemical liquid discharged through the first flow path is easily sucked in through the second flow path.
(23) A substrate processing method according to a further aspect of the present invention comprises the steps of positioning a nozzle having a first flow path having a first end opening and a second flow path having a second end opening adjacent to the first end opening above a substrate; discharging a chemical liquid through the first flow path after the step of positioning the nozzle above the substrate; and applying suction through the second flow path during or after the step of discharging the chemical liquid.
In the substrate processing method, the nozzle has the first flow path having the first end opening and the second flow path having the second end opening. The first end opening of the first flow path and the second end opening of the second flow path are adjacent to each other. The chemical liquid is discharged through the first flow path. In a time period during which the chemical liquid is discharged or after the discharge of the chemical liquid is completed, suction is applied through the second flow path.
In this case, the chemical liquid remaining in the vicinity of the first end opening is sucked in through the second flow path. This prevents the chemical liquid from remaining in the vicinity of the first end opening.
In a case where a deposit of the chemical liquid is formed in the first flowpath, the chemical liquid is discharged through the first flow path, and suction is applied through the second flow path, which causes the deposit of the chemical liquid to be cleaned away with the chemical liquid and can prevent the chemical liquid from remaining in the vicinity of the first end opening.
This prevents the deposit of the chemical liquid from being formed in the vicinity of the first end opening or prevents the formed deposit from remaining. As a result, processing defects in the substrate due to the deposit of the chemical liquid are sufficiently prevented.
(24) The substrate processing method may further comprise the step of discharging an inert gas through at least one of the first flow path and the second flow path during or after the step of discharging the chemical liquid.
In this case, the inert gas is discharged through at least one of the first flow path and the second flow path. This causes the chemical liquid remaining in the vicinity of the first end opening to be discharged outward with the inert gas.
(25) The substrate processing method may further comprise the step of discharging a rinse liquid through at least one of the first flow path and the second flow path during or after the step of discharging the chemical liquid.
In this case, the rinse liquid is discharged through at least one of the first flow path and the second flow path. This causes the chemical liquid remaining in the vicinity of the first end opening to be cleaned away with the rinse liquid.
(26) The step of discharging the chemical liquid may comprise the step of discharging the chemical liquid toward the substrate through the first flow path to process the substrate.
In this case, the substrate can be subjected to predetermined processing by discharging the chemical liquid toward the substrate. This causes the substrate to be subjected to predetermined processing in the step of discharging the chemical liquid.
(27) The substrate processing method may further comprise a nozzle retracting step for retracting the nozzle from above the substrate after the step of processing the substrate, and the step of discharging the chemical liquid may further comprise the step of discharging the chemical liquid through the first flow path after the nozzle retracting step, to clean a deposit of the chemical liquid adhering to the vicinity of the first end opening of the nozzle.
In this case, the nozzle is retracted from above the substrate after the chemical liquid is discharged to the substrate from the nozzle. Thereafter, the chemical liquid is discharged through the first flow path of the nozzle, so that the deposit of the chemical liquid adhering to the vicinity of the first end opening is cleaned away. The discharge of the chemical liquid for cleaning away the deposit of the chemical liquid is thus performed outside the substrate. This prevents the removed deposit of the chemical liquid from dropping on the substrate, thereby preventing processing defects in the substrate.
Other features, elements, characteristics, and advantages of the present invention will become more apparent from the following description of preferred embodiments of the present invention with reference to the attached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of a substrate processing apparatus according to an embodiment of the present invention;
FIG. 2 is a diagram for explaining the configuration of a cleaning processing unit in a substrate processing apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic view showing the detailed configuration of a multifunctional nozzle and a supply suction system;
FIG. 4 is a diagram for explaining a first example of the operations of the multifunctional nozzle;
FIG. 5 is a diagram for explaining a second example of the operations of the multifunctional nozzle;
FIG. 6 is a diagram for explaining a third example of the operations of the multifunctional nozzle;
FIG. 7 is a diagram for explaining a fourth example of the operations of the multifunctional nozzle;
FIG. 8 is a diagram showing another example of the multifunctional nozzle;
FIG. 9 is a diagram showing still another example of the multifunctional nozzle; and
FIG. 10 is a cross-sectional view showing the details of a waiting pot and a liquid guide plate.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

A substrate processing apparatus according to embodiments of the present invention will be now described with reference to the drawings.
In the following description, a substrate refers to a semiconductor wafer, a glass substrate for a liquid crystal display, a glass substrate for a PDP (Plasma Display Panel), a glass substrate for a photo mask, a glass substrate for an optical disk, or the like.

(1) CONFIGURATION OF SUBSTRATE PROCESSING APPARATUS

FIG. 1 is a plan view of a substrate processing apparatus according to an embodiment of the present invention. As shown in FIG. 1, a substrate processing apparatus 100 has processing regions A and B, and a transport region C between the processing regions A and B.
A control unit 4, fluid boxes 2 a and 2 b, a cleaning processing units 5 a and 5 b are arranged in the processing region A.
Each of the fluid boxes 2 a and 2 b shown in FIG. 1 stores fluid-related equipment such as pipes, joints, valves, flow meters, regulators, pumps, temperature controllers, and chemical liquid storage tanks, related to supply of a chemical liquid and pure water to the cleaning processing units 5 a and 5 b and discard (drain) thereof from the cleaning processing units 5 a and 5 b. The specific example of the configuration of the fluid boxes 2 a and 2 b will be described later.
In the cleaning processing units 5 a and 5 b, cleaning processing with a chemical liquid (hereinafter referred to as chemical liquid processing) and cleaning processing with pure water (hereinafter referred to as rinsing processing) are performed. In the present embodiment, the chemical liquid used in the cleaning processing units 5 a and 5 b is a solution mixture of BHF and phosphoric acid.
Fluid boxes 2 c and 2 d and cleaning processing units 5 c and 5 d are arranged in the processing region B. The fluid boxes 2 c and 2 d and the cleaning processing units 5 c and 5 d respectively have the same configurations as those of the fluid boxes 2 a and 2 b and the cleaning processing units 5 a and 5 b, and the cleaning processing units 5 a and 5 d respectively perform the same processing as that of the cleaning processing units 5 a and 5 b.
The cleaning processing units 5 a 5 b, 5 c, and 5 d are hereinafter generically referred to as a processing unit. A substrate transport robot CR is provided in the transport region C.
At one end of each of the processing regions A and B, an indexer ID for carrying in and out substrates W is arranged. An indexer robot IR is provided inside the indexer ID. Carriers 1 that respectively store the substrates W are placed on the indexer ID.
The indexer robot IR in the indexer ID moves in a direction indicated by an arrow U, to take out the substrate W from the carrier 1 and transfer the substrate W to the substrate transport robot CR, while receiving the substrate W that has been subjected to a series of processing from the substrate transport robot CR and returning the substrate W to the carrier 1.
The substrate transport robot CR transports the substrate W transferred from the indexer robot IR to the designated processing unit, or transports the substrate W received from the processing unit to the other processing unit or the indexer robot IR.
In the present embodiment, after the substrate W is subjected to chemical liquid processing in any one of the cleaning processing units 5 a to 5 d, the substrate W is carried out of the cleaning processing units 5 a to 5 d by the substrate transport robot CR and is carried into the carrier 1 through the indexer robot IR.
The control unit 4 comprises a computer or the like including a CPU (Central Processing Unit), to control the operation of each of the processing units in the processing regions A and B, the operation of the substrate transport robot CR in the transport region C, and the operation of the indexer robot IR in the indexer ID. The details of the control unit 4 will be described later.

(2) CONFIGURATION OF CLEANING PROCESSING UNIT

FIG. 2 is a diagram for explaining the configuration of cleaning processing units 5 a to 5 d in the substrate processing apparatus 100 according to an embodiment of the present invention.
As shown in FIG. 2, each of the cleaning processing units 5 a to 5 d comprises a spin chuck 21 for horizontally holding the substrate W as well as rotating the substrate W around a vertical rotation shaft passing through the center of the substrate W.
The spin chuck 21 is secured to an upper end of a rotation shaft 25 which is rotated by a chuck rotation-driving mechanism 36. A suction path (not shown) is formed in the spin chuck 21. Air inside the suction path is exhausted with the substrate W placed on the spin chuck 21, to adsorb a lower surface of the substrate W on the spin chuck 21 under vacuum, so that the substrate W can be held in a horizontal attitude.
A motor 60 is provided outside the spin chuck 21. A rotation shaft 61 is connected to the motor 60. An arm 62 is connected to the rotation shaft 61 so as to extend in the horizontal direction, and a multifunctional nozzle 50 is provided at a tip of an arm 62. The multifunctional nozzle 50 has a double-pipe structure, and has two flow paths, that is, an inner flow path and an outer flow path. The details of the configuration of the multifunctional nozzle 50 will be described later.
A cup-shaped waiting pot 65 is provided at a waiting position outside the spin chuck 21. A drain pipe 80 for draining pure water to a drain processing device (not shown) and a recovery pipe 81 for introducing a chemical liquid to a recovery processing device (not shown) for recovering a chemical liquid are connected to the waiting pot 65.
When the substrate W is not processed by the multifunctional nozzle 50, the multifunctional nozzle 50 waits above the waiting pot 65.
The motor 60 causes the rotation shaft 61 to rotate while causing the arm to swing, which causes the multifunctional nozzle 50 to move between an area above the waiting pot 65 and an area above the substrate W held on the spin chuck 21.
A supply suction pipe 63 is provided so as to communicate with the inner flow path of the multifunctional nozzle 50. One end of the supply suction pipe 63 is connected to the multifunctional nozzle 50, and the other end thereof is connected to a supply suction system R1 provided in the fluid boxes 2 a to 2 d (see FIG. 1).
A supply suction pipe 64 is provided so as to communicate with the outer flow path of the multifunctional nozzle 50. One end of the supply suction pipe 64 is connected to the multifunctional nozzle 50, and the other end thereof is connected to a supply suction system R2 provided in the fluid boxes 2 a to 2 d.
The supply suction pipes 63 and 64 pass through the motor 60, the rotation shaft 61, and the arm 62.
A motor 71 is provided outside the spin chuck 21. A rotation shaft 72 is connected to the motor 71. An arm 73 is connected to the rotation shaft 72 so as to extend in the horizontal direction, and a nozzle 70 for rinsing processing is provided at a tip of the arm 73.
The motor 71 causes the rotation shaft 72 to rotate while causing the arm 73 to swing, which causes the nozzle 70 to move to above the substrate W held on the spin chuck 21.
A supply pipe 74 for rinsing processing is provided so as to pass through the motor 71, the rotation shaft 72, and the arm 73. The supply pipe 74 is connected to a pure water supply source R3 provided in the fluid boxes 2 a to 2 d through a valve Vc. By controlling the opening of the valve Vc, the amount of pure water supplied to the supply pipe 74 can be adjusted.
The pure water is supplied to the nozzle 70 from the pure water supply source R3 through the supply pipe 74. This allows the pure water to be supplied to the surface of the substrate W.
The multifunctional nozzle 50 moves to a processing position above the center of the substrate W when supplying the chemical liquid onto the substrate W, while being retracted to the waiting position when supplying the pure water to the surface of the substrate W.
The nozzle 70 is retracted to the waiting position when supplying the chemical liquid onto the substrate W, while moving to the processing position above the center of the substrate W when supplying the pure water onto the substrate W.
The substrate W held on the spin chuck 21 is stored in a processing cup 23. A cylindrical partition wall 33 is provided inside the processing cup 23. A drain space 31 for draining the pure water used for processing the substrate W is formed so as to surround the spin chuck 21. Further, a recovery space 32 for recovering the chemical liquid used for processing the substrate W is formed between the processing cup 23 and the partition wall 33 so as to surround the drain space 31.
A drain pipe 34 for draining the pure water to the drain processing device (not shown) is connected to the drain space 31. A recovery pipe 35 for introducing the chemical liquid into the recovery processing device (not shown) is connected to the recovery space 32.
A guard 24 is provided above the processing cup 23 for preventing the chemical liquid or the pure water from the substrate W from being splashed outward. The guard 24 is shaped to be rotationally-symmetric with respect to the rotation shaft 25. An annular-shaped liquid drain guide groove 41 with a V-shaped cross section is formed inwardly at an upper end of the guard 24.
Furthermore, a recovery liquid guide 42 having an inclined surface that is inclined outwardly and downwardly is formed inwardly at a lower end of the guard 24. A partition wall housing groove 43 for receiving the partition wall 33 of the processing cup 23 is formed in the vicinity of an upper end of the recovery liquid guide 42.
This guard 24 is provided with a guard lifting mechanism (not shown) composed of a ball-screw mechanism or the like. The guard lifting mechanism moves the guard 24 upward and downward between a recovery position in which the recovery liquid guide 42 is opposed to outer edges of the substrate W held on the spin chuck 21 and a drain position in which the liquid drain guide groove 41 is opposed to the outer edges of the substrate W held on the spin chuck 21. When the guard 24 is in the recovery position (i.e., the position of the guard 24 shown in FIG. 2), the chemical liquid splashed outward from the substrate W is introduced into the recovery space 32 by the recovery liquid guide 42, and then recovered through the recovery pipe 35. On the other hand, when the guard 24 is in the drain position, the pure water splashed outward from the substrate W is introduced into the drain space 31 by the liquid drain guide groove 41, and then drained through the drain pipe 34. The foregoing configuration causes the pure water to be drained and the chemical liquid to be recovered.

(3) DETAILED CONFIGURATION OF MULTIFUNCTIONAL NOZZLE AND SUPPLY SUCTION SYSTEM

The detailed configuration of the multifunctional nozzle 50, the supply suction system R1, and the supply suction system R2 will be then described.
FIG. 3 is a schematic view showing the detailed configuration of the multifunctional nozzle 50, the supply suction system R1, and the supply suction system R2.
As shown in FIG. 3, the multifunctional nozzle 50 has a double-pipe structure comprising a cylindrical inner pipe 50A and a cylindrical outer pipe 50B. An inner flow path 50 a is formed in the inner pipe 50A, and a cylindrical outer flow path 50 b is formed between an outer peripheral surface of the inner pipe 50A and an inner peripheral surface of the outer pipe 50B. A discharge port 51 a communicating with the inner flow path 50 a and a discharge port 51 b communicating with the outer flow path 50 b are formed at a tip of the multifunctional nozzle 50. The inner flow path 50 a is connected to the supply suction system R1 through the supply suction pipe 63. The outer flow path 50 b is connected to the supply suction system R2 through the supply suction pipe 64.
The supply suction system R1 has a chemical liquid supply source R1, a rinse liquid supply source R12, an inert gas supply source R13, and an ejector E1. The supply suction pipe 63 branches into pipes 63 a, 63 b, 63 c, and 63 d, which are respectively connected to the chemical liquid supply source R11, the rinse liquid supply source R12, the inert gas supply source R13, and the ejector E1 through valves Va1, Va2, Va3, and Va4.
The opening or closing the valves Va1, Va2, Va3, and Va4 is controlled, thereby making it possible to selectively supply the chemical liquid from the chemical liquid supply source R11, supply the rinse liquid from the rinse liquid supply source R12, supply the inert gas from the inert gas supply source R13, and apply suction through the inner flow path 50 a of the multifunctional nozzle 50 by the ejector E1. In the present embodiment, BHF is used as the chemical liquid, pure water is used as the rinse liquid, and N₂(nitrogen) gas is used as the inert gas.
A discharge pipe E11 is connected to the ejector E1. The chemical liquid, the rinse liquid, or the like sucked in through the supply suction pipe 63 and the pipe 63 d by the ejector E1 is introduced into the drain processing device or the recovery processing device through the discharge pipe E11.
The respective amounts of the chemical liquid, the rinse liquid, and the inert gas to be supplied as well as a suction force produced by the ejector E1 can be adjusted by controlling the respective openings of the valves Va1, Va2, Va3, and Va4.
The supply suction system R2 has a chemical liquid supply source R21, a rinse liquid supply source R22, an inert gas supply source R23, and an ejector E2. The supply suction pipe 64 branches into pipes 64 a, 64 b, 64 c, and 64 d, which are respectively connected to the chemical liquid supply source R21, the rinse liquid supply source R22, the inert gas supply source R23, and the ejector E2 through valves Vb1, Vb2, Vb3, and Vb4.
The opening or closing the valves Vb1, Vb2, Vb3, and Vb4 is controlled, thereby making it possible to selectively supply the chemical liquid from the chemical liquid supply source R21, supply the rinse liquid from the rinse liquid supply source R22, supply the inert gas from the inert gas supply source R23, and apply suction through the multifunctional nozzle 50 by the ejector E2.
The respective amounts of the chemical liquid, the rinse liquid, and the inert gas to be supplied as well as a suction force produced by the ejector E2 can be adjusted by controlling the respective openings of the valves Vb1, Vb2, Vb3, and Vb4.
A discharge pipe E21 is connected to the ejector E2. The chemical liquid, the rinse liquid, or the like sucked in through the supply suction pipe 64 and the pipe 64 d by the ejector E2 is introduced into the drain processing device or the recovery processing device through the discharge pipe E21.
Such a configuration makes it possible to selectively supply the chemical liquid, supply the rinse liquid, supply the inert gas, and suck in through the inner flow path 50 a and the outer flow path 50 b of the multifunctional nozzle 50 in the present embodiment.
(4) OPERATIONS OF CLEANING PROCESSING UNIT
The operations of the cleaning processing units 5 a to 5 d having the above-mentioned configuration will be then described with reference to FIGS. 2 and 3. Note that the operation of each of components in the cleaning processing units 5 a to 5 d described below is controlled by the control unit 4 shown in FIG. 1.
When the substrate W is carried into the cleaning processing units 5 a to 5 d, the guard 24 is lowered, and the substrate transport robot CR places the substrate W on the spin chuck 21. The substrate W placed on the spin chuck 21 is held therein by suction.
Then, the guard 24 is raised to the above-mentioned recovery position or drain position while the multifunctional nozzle 50 moves to the processing position above the center of the substrate W from the waiting position. Thereafter, the rotation shaft 25 rotates, which causes the substrate W held on the spin chuck 21 to rotate. Thereafter, the chemical liquid is discharged onto the upper surface of the substrate W from the multifunctional nozzle 50. In the present embodiment, the chemical liquid is discharged through the inner flow path 50 a of the multifunctional nozzle 50. This causes the substrate W to be subjected to the chemical liquid processing. After the chemical liquid processing of the substrate W is terminated, the multifunctional nozzle 50 moves to the waiting position.
The nozzle 70 then moves to above the center of the substrate W. The pure water is then discharged from the nozzle 70. This causes the chemical liquid on the substrate W to be cleaned away.
The supply of the pure water is then stopped, so that the revolution speed of the rotation shaft 25 increases. This causes a great centrifugal force to act on the pure water on the substrate W, so that the pure water on the substrate W is removed.
Then, the nozzle 70 is retracted to a predetermined position while the rotation of the rotation shaft 25 is stopped. Thereafter, the guard 24 is lowered while the substrate transport robot CR shown in FIG. 1 carries the substrate W out of the cleaning processing units 5 a to 5 d. The processing operation in the cleaning processing units 5 a to 5 d is thus terminated.
It is preferred that the position of the guard 24 during the chemical liquid processing and the rinsing processing of the substrate W is suitably changed according to the necessity of recovering the chemical liquid or draining the pure water.

(5) EXAMPLES OF CLEANING OPERATION BY MULTIFUNCTIONAL NOZZLE

As described in the foregoing, in the cleaning processing units 5 a to 5 d, the chemical liquid is discharged to the substrate W through the inner flow path 50 a of the multifunctional nozzle 50, so that the substrate W is subjected to the chemical liquid processing. In this case, after the substrate W is subjected to the chemical liquid processing, the chemical liquid adhering to a tip portion and an inner peripheral surface of the inner pipe 50A of the multifunctional nozzle 50 is dried, so that a deposit of the chemical liquid is formed on the multifunctional nozzle 50. Particularly, BHF containing ammonium fluoride serving as a salt obtained by neutralization of an acid and an alkali is used as the chemical liquid in the present embodiment, so that a deposit composed of the salt is easily formed. The deposit causes processing defects in the substrate W when it drops on the substrate W from the multifunctional nozzle 50 or it changes the supply conditions of the chemical liquid supplied to the substrate W from the multifunctional nozzle 50.
In the present embodiment, it is possible to prevent the deposit from being formed or remove the formed deposit by performing the following operations using the multifunctional nozzle 50.

(5-1) First Example of Operations

FIG. 4 is a diagram for explaining a first example of the operations of the multifunctional nozzle 50.
When the substrate W is subjected to the chemical liquid processing, the chemical liquid is supplied to the substrate W through the inner flow path 50 a of the multifunctional nozzle 50, as shown in FIG. 4(a).
After an elapse of a predetermined time period, the supply of the chemical liquid is stopped, and the multifunctional nozzle 50 moves to the waiting position. At this time, the chemical liquid adheres to the tip portion and the inner peripheral surface of the inner pipe 50A of the multifunctional nozzle 50, as shown in FIG. 4(b).
Therefore, the ejector E2 (see FIGS. 2 and 3) applies suction through the outer flow path 50 of the multifunctional nozzle 50, as shown in FIG. 4(c). This causes the chemical liquid adhering to the tip portion of the inner pipe 50A to be sucked in through the outer flow path 50 b by the ejector E2 and discharged. As a result, the chemical liquid adhering to the tip portion of the inner pipe 50A is removed.
Alternatively, the ejectors E1 and E2 respectively apply suction through the inner flow path 50 a and the outer flow path 50 b of the multifunctional nozzle 50, as shown in FIG. 4(d). This causes the chemical liquid adhering to the tip portion of the inner pipe 50A to be sucked in through the inner flow path 50 a and the outer flow path 50 b, respectively, by the ejectors E1 and E2 and discharged. The chemical liquid adhering to the inner peripheral surface of the inner pipe 50A is sucked in by the ejector E1 and is discharged. As a result, the chemical liquid adhering to the tip portion and the inner peripheral surface of the inner pipe 50A is removed.
Alternatively, the inert gas is discharged through the inner flow path 50 a of the multifunctional nozzle 50 while the ejector E2 applies suction through the outer flow path 50 b, as shown in FIG. 4(e). This causes the chemical liquid adhering to the inner peripheral surface of the inner pipe 50A to be discharged outward from the multifunctional nozzle 50 with the inert gas. The chemical liquid adhering to the tip portion of the inner pipe 50A to be sucked in through the outer flow path 50 b by the ejector E2 and discharged. As a result, the chemical liquid adhering to the tip portion and the inner peripheral surface of the inner pipe 50A is removed.
The chemical liquid adhering to the tip portion or the inner peripheral surface of the inner pipe 50A of the multifunctional nozzle 50 is thus removed after the substrate W is subjected to the chemical liquid processing, thereby preventing a deposit from being formed.
In the examples shown in FIGS. 4(c), 4(d), and 4(e), the chemical liquid discharged from the ejector E1 or the ejector E2 may be returned to the chemical liquid supply source R11 shown in FIG. 3 through the recovery processing device. This allows a high-cost chemical liquid to be utilized again.
Furthermore, after the operation shown in FIG. 4(a) and before the operations shown in FIGS. 4(c) to 4(e), the discharge of the chemical liquid through the inner flow path 50 a above the waiting pot 65 (hereinafter referred to as on-pot chemical liquid discharge) may be performed in a state where the deposit of the chemical liquid is formed on the multifunctional nozzle 50. In this case, it is possible to clean away the deposit with the chemical liquid while preventing the deposit from being formed again.

(5-2) Second Example of Operations

FIG. 5 is a diagram for explaining a second example of the operations of the multifunctional nozzle 50.
The chemical liquid is supplied to the substrate W through the inner flow path 50 a of the multifunctional nozzle 50, so that the substrate W is subjected to the chemical liquid processing, as shown in FIG. 5(a).
After an elapse of a predetermined time period, the supply of the chemical liquid is stopped, and the multifunctional nozzle 50 moves to the waiting position. The rinse liquid is then discharged into the waiting pot 65 shown in FIG. 2 through the inner flow path 50 a of the multifunctional nozzle 50, as shown in FIG. 5(b), above the waiting pot 65. This causes the chemical liquid adhering to the tip portion and the inner peripheral surface of the inner pipe 50A of the multifunctional nozzle 50 to be cleaned away with the rinse liquid. The rinse liquid discharged into the waiting pot 65 is introduced to the drain processing device (not shown) through the liquid drain pipe 80.
Subsequently, the ejector E1 applies suction through the outer flow path 50 b of the multifunctional nozzle 50, as shown in FIG. 5(c). This causes the rinse liquid adhering to the tip portion of the inner pipe 50A to be sucked in through the outer flow path 50 b by the ejector E2 and discharged. As a result, the rinse liquid adhering to the tip portion of the inner pipe 50A is removed.
Alternatively, the ejector E1 applies suction through the inner flow path 50 a and the outer flow path 50 b of the multifunctional nozzle 50, as shown in FIG. 5(d). This causes the rinse liquid adhering to the tip portion of the inner pipe 50A to be sucked in through the inner flow path 50 a and the outer flow path 50 b, respectively, by the ejector E1 and the ejector E2 and discharged. The rinse liquid adhering to the inner peripheral surface of the inner pipe 50A is sucked in by the ejector E1 and discharged. As a result, the rinse liquid adhering to the tip portion and the inner peripheral surface of the inner pipe 50A is removed.
Alternatively, the inert gas is discharged through the inner flow path 50 a of the multifunctional nozzle 50 while the ejector E2 applies suction through the outer flow path 50, as shown in FIG. 5(e). This causes the rinse liquid adhering to the tip portion and the inner peripheral surface of the inner pipe 50A to be discharged outward from the multifunctional nozzle 50 with the inert gas. This causes the rinse liquid adhering to the tip portion of the inner pipe 50A to be sucked in through the outer flow path 50 b by the ejector E2 and discharged. As a result, the rinse liquid adhering to the tip portion and the inner peripheral surface of the inner pipe 50A is removed.
In the example shown in FIG. 5, the rinse liquid is discharged through the innerflow path 50 a of the multifunctional nozzle 50. This allows the chemical liquid adhering to the tip portion and the inner peripheral surface of the inner pipe 50A to be cleaned away with the rinse liquid.
Even if the chemical liquid cannot be sufficiently cleaned away with the rinse liquid, the chemical liquid remaining in the rinse liquid adhering to the tip portion or the inner peripheral surface of the inner pipe 50A is removed by suction or discharge of the inert gas, which can prevent the chemical liquid from being deposited.
Furthermore, after the operation shown in FIG. 5(a) and before the operation shown in FIG. 5(b), the on-pot chemical liquid discharge, described in the first example of operations, may be performed. In this case, it is possible to clean away the deposit with the chemical liquid while preventing the deposit from being formed again. In a case where the amount of the deposit of the chemical liquid formed on the multifunctional nozzle 50 is very small, the on-pot chemical liquid discharge may not be performed.

(5-3) Third Example of Operations

FIG. 6 is a diagram for explaining a third example of the operations of the multifunctional nozzle 50.
The chemical liquid is supplied to the substrate W through the inner flow path 50 a of the multifunctional nozzle 50, so that the substrate W is subjected to the chemical liquid processing, as shown in FIG. 6(a).
After an elapse of a predetermined time period, the supply of the chemical liquid is stopped. The pure water (rinse liquid) is then supplied to the substrate W through the outer flow path 50 b of the multifunctional nozzle 50, as shown in FIG. 6(b) This causes the substrate W to be subjected to the rinsing processing while the chemical liquid adhering to the tip portion of the inner pipe 50A of the multifunctional nozzle 50 is cleaned away with the pure water (rinse liquid). Thereafter, the multifunctional nozzle 50 moves to the waiting position.
Subsequently, the ejector E2 applies suction through the outer flow path 50 b of the multifunctional nozzle 50, as shown in FIG. 6(c). This causes the chemical liquid or the rinse liquid adhering to the tip portions of the inner pipe 50A and the outer pipe 50B as well as the outer peripheral surface of the inner pipe 50A and the inner peripheral surface of the outer pipe 50B to be sucked in through the outer flow path 50 b by the ejector E2 and discharged. As a result, the chemical liquid or the rinse liquid adhering to the tip portions of the inner pipe 50A and the outer pipe 50B as well as the outer peripheral surface of the inner pipe 50A and the inner peripheral surface of the outer pipe 50B is removed.
Although the ejector E2 applies suction through the outer flowpath 50 b of the multifunctional nozzle 50, as in the example shown in FIG. 6(c), the ejector E1 may apply suction through the inner flow path 50 a. In this case, the chemical liquid or the rinse liquid adhering to the tip portions of the inner pipe 50A and the outer pipe 50B as well as the inner peripheral surface of the inner pipe 50A is removed.
Alternatively, the ejector E1 and the ejector E2 respectively apply suction through the inner flow path 50 a and the outer flow path 50 b of the multifunctional nozzle 50, as shown in FIG. 6(d). This causes the chemical liquid or the rinse liquid adhering to the tip portions of the inner pipe 50A and the outer pipe 50B to be sucked in through the inner flow path 50 a and the outer flow path 50 b, respectively, by the ejectors E1 and E2 and discharged. The chemical liquid or the rinse liquid adhering to the inner peripheral surface and the outer peripheral surface of the inner pipe 50A and the inner peripheral surface of the outer pipe 50B is sucked in by the ejector E1 and the ejector E2 and is discharged. As a result, the chemical liquid or the rinse liquid adhering to the tip portions of the inner pipe 50A and the outer pipe 50B as well as the inner peripheral surface and the outer peripheral surface of the inner pipe 50A and the inner peripheral surface of the outer pipe 50B is removed.
Alternatively, the inert gas is discharged through the inner flow path 50 a of the multifunctional nozzle 50 while the ejector E2 applies suction through the outer flow path 50, as shown in FIG. 6(e). This causes the chemical liquid or the rinse liquid adhering to the tip portion and the inner peripheral surface of the inner pipe 50A to be discharged outward from the multifunctional nozzle 50 with the inert gas. Further, the chemical liquid or the rinse liquid adhering to the tip portions of the inner pipe 50A and the outer pipe 50B as well as the outer peripheral surface of the inner pipe 50A and the inner peripheral surface of the outer pipe 50B is sucked in through the outerflow path 50 b by the ejector E2 and is discharged. As a result, the chemical liquid or the rinse liquid adhering to the tip portions of the inner pipe 50A and the outer pipe SOB as well as the inner peripheral surface and the outer peripheral surface of the inner pipe 50A and the inner peripheral surface of the outer pipe 50B is removed.
In the example shown in FIG. 6, the rinse liquid is discharged through the outer flow path 50 b of the multifunctional nozzle 50. This allows the chemical liquid adhering to the tip portion of the inner pipe 50A to be cleaned away with the rinse liquid.
Since the chemical liquid and the rinse liquid are respectively discharged through the separate flow paths, the mixing of the chemical liquid into the rinse liquid is restrained. If pure water is used as the rinse liquid discharged from the multifunctional nozzle 50, therefore, the rinse liquid can be used for subjecting the substrate W to the rinsing processing. As a result, the nozzle 70 shown in FIG. 2 need not be provided separately from the multifunctional nozzle 50, thereby simplifying the internal configuration of the cleaning processing units 5 a to 5 d.
Furthermore, after the operation shown in FIG. 6(a) and before the operation shown in FIG. 6(b), the on-pot chemical liquid discharge, described in the second example of operations, may be performed. In this case, it is possible to clean away the deposit with the chemical liquid while preventing the deposit from being formed again. In a case where the amount of the deposit of the chemical liquid formed on the multifunctional nozzle 50 is very small, the on-pot chemical liquid discharge may not be performed.

(5-4) Fourth Example of Operations

FIG. 7 is a diagram for explaining a fourth example of the operations of the multifunctional nozzle 50. The operations shown in FIG. 7 are performed in a state where the multi-functional nozzle 50 is brought closer to the liquid guide plate 67 provided in the waiting pot 65. The details of the liquid guide plate 67 will be described later.
After the chemical liquid is supplied to the substrate W above the substrate W so that the substrate W is subjected to the chemical liquid processing, the chemical liquid is discharged onto the liquid guide plate 67 through the inner flow path 50 a of the multifunctional nozzle 50, as shown in FIG. 7(a), above the waiting pot 65 while the ejector E2 applies suction through the outer flow path 50 b of the multifunctional nozzle 50. In this case, the chemical liquid discharged through the inner flow path 50 a is guided into the outer flow path 50 b by the liquid guide plate 67 and is sucked in. This causes the deposit adhering to the inside of the inner flow path 50 a and the outer flow path 50 b to be cleaned away with the chemical liquid.
Then, the rinse liquid is discharged onto the liquid guide plate 67 through the inner flow path 50 a of the multifunctional nozzle 50 while the ejector E2 applies suction through the outer flow path 50 b of the multifunctional nozzle 50, as shown in FIG. 7(b). In this case, the rinse liquid discharged through the inner flow path 50 a is guided into the outer flow path 50 b by the liquid guide plate 67 and is sucked in. This causes the chemical liquid remaining in the inner flow path 50 a and the outer flow path 50 b to be cleaned away with the rinse liquid.
Then, the inert gas is discharged through the inner flow path 50 a of the multifunctional nozzle 50 while the ejector E2 applies suction through the outer flow path 50 b of the multifunctional nozzle 50, as shown in FIG. 7(c). This causes the rinse liquid remaining in the inner flow path 50 a and the outer flow path 50 b to be removed.
In the examples shown in FIG. 7(a), the chemical liquid discharged from the ejector E2 may be returned to the chemical liquid supply source R11 shown in FIG. 3 through the recovery processing device. This allows a high-cost chemical liquid to be utilized again.
In the fourth example of operations, the operation of applying suction while discharging the chemical liquid shown in FIG. 7(a) may be omitted, and only the operations shown in FIGS. 7(b) and 7(c) may be performed. Also in this case, the chemical liquid remaining in the inner flow path 50 a of the multifunctional nozzle 50 is cleaned away with the rinse liquid while the remaining rinse liquid can be removed with the inert gas.

(5-5) Fifth Example of Operations

In the first to third examples of operations, in a case where the above-mentioned on-pot chemical liquid discharge is performed, the chemical liquid may be discharged while the ejector E2 applies suction through the outer flow path 50 b. In this case, the outer flow path 50 b can be simultaneously cleaned with the chemical liquid.
At this time, the chemical liquid discharged from the ejector E1 or the ejector E2 may be returned to the chemical liquid supply source R11 shown in FIG. 3 through the recovery processing device. This allows a high-cost chemical liquid to be utilized again.

(5-6) Sixth Example of Operations

In discharging the rinse liquid through the inner flow path 50 a or the outer flow path 50 b of the multifunctional nozzle 50, as in the examples shown in FIGS. 5(b) and 6(b), the ejector E2 or the ejector E1 may apply suction through the inner flow path 50 a or the outer flow path 50 b. In the case, the inner flow path 50 a or the outer flow path 50 b can be simultaneously cleaned with the rinse liquid.

(5-7) Seventh Example of Operations

Although the inert gas is discharged through the inner flow path 50 a of the multifunctional nozzle 50 while the ejector E2 applies suction through the outer flow path 50 b of the multifunctional nozzle 50, as in the examples shown in FIGS. 4(e), 5(e), and 6(e), the inert gas may be discharged through the outer flow path 50 b while the ejector E1 applies suction through the inner flow path 50 a. Further, the inert gas may be discharged through the inner flow path 50 a and the outer flow path 50 b.

(5-8) Eighth Example of Operations

Although the discharge of the inert gas and the suction by the ejector E2 are simultaneously performed in the examples shown in FIGS. 4(e), 5(e), and 6(e), suction may be applied after the inert gas is discharged, or the inert gas may be discharged after suction is applied.

(5-9) Ninth Example of Operations

In the examples shown in FIGS. 4 to 6, the operation in the inner flow path 50 a of the multifunctional nozzle 50 and the operation in the outer flow path 50 b of the multifunctional nozzle 50 may be reverse to each other. In the example shown in FIGS. 4(a) to 4(c), for example, the ejector E1 may apply suction through the inner flow path 50 a after the chemical liquid is discharged through the outer flow path 50 b of the multifunctional nozzle 50.

(6) Other examples of Multifunctional Nozzle

The nozzle 50 shown in FIG. 3 may be replaced with a multifunctional nozzle 50 shown in FIG. 8. In the multifunctional nozzle 50 shown in FIG. 8, a tip of an outer pipe 50B projects farther than a tip of an inner pipe 50A. In this case, the ejector E2 (see FIG. 3) applies suction through an outer flow path 50 b, thereby allowing a chemical liquid or a rinse liquid adhering to the tip portion of the inner pipe 50A to be easily removed. In a case where the chemical liquid or the rinse liquid is discharged from an inner flow path 50 a simultaneously with suction applied through the outer flow path 50 b, the chemical liquid or the rinse liquid discharged through the inner flow path 50 a can be easily introduced into the outer flow path 50 b.
The multifunctional nozzle 50 shown in FIG. 3 may be replaced with a multifunctional nozzle 50 shown in FIG. 9. In the multifunctional nozzle 50 shown in FIG. 9, an outer pipe 50B is so formed in a tapered shape that its tip portion progressively comes closer to the center toward its tip. In this case, the ejector E2 (see FIG. 3) applies suction through an outer flow path 50 b, thereby allowing a chemical liquid or a rinse liquid adhering to a tip portion of an inner pipe 50A to be more easily removed. In a case where the chemical liquid or the rinse liquid is discharged from an inner flow path 50 a simultaneously with suction applied through the outer flow path 50 b, the chemical liquid or the rinse liquid discharged through the inner flow path 50 a can be more easily introduced into the outer flow path 50 b.

(7) LIQUID GUIDE PLATE

In a case where suction is applied through the outer flow path 50 b of the multifunctional nozzle 50 while discharging the chemical liquid or the rinse liquid through the inner flow path 50 a of the multifunctional nozzle 50 at the waiting position, as in the example shown in FIG. 7, a liquid guide plate 67 is provided in the waiting pot 65.
FIG. 10 is a cross-sectional view showing the details of the waiting pot 65 and the liquid guide plate 67.
As shown in FIG. 10, the liquid guide plate 67 is stretched so as to be attachable or detachable on an upper opening of the waiting pot 65. The liquid guide plate 67 is composed of a member having a substantially rectangular plate shape. Further, the liquid guide plate 67 is concavely curved in its central area, and has a liquid guide 67 a having a horizontal plane formed therein.
The chemical liquid or the rinse liquid is discharged by the multifunctional nozzle 50 and is sucked in with the tip portion of the multifunctional nozzle 50 opposed to the liquid guide 67 a of the liquid guide plate 67 with a very small gap (e.g., 1 mm) provided therebetween. Thus, the chemical liquid or the rinse liquid discharged from the multifunctional nozzle 50 is reliably received by the liquid guide 67 a of the liquid guide plate 67 without dropping downward as it is. Therefore, the chemical liquid or the rinse liquid discharged through the inner flow path 50 a of the multifunctional nozzle 50 can be easily sucked in through the outer flow path 50 b.
In a case where suction is applied through the inner flow path 50 a while discharging the chemical liquid or the rinse liquid through the outer flow path 50 b of the multifunctional nozzle 50 with the liquid guide plate 67 mounted on the waiting pot 65, the chemical liquid or the rinse liquid discharged through the outer flow path 50 b is also easily sucked in through the inner flow path 50 a.
Note that the liquid guide plate 67 may not be provided when suction forces produced by the ejectors E1 and E2 are sufficiently large.

(8) ANOTHER EMBODIMENT

(8-1)
Although in the above-mentioned embodiment, after subjecting the substrate W to the rinsing processing, the substrate W is dried by removing the pure water on the substrate W by the centrifugal force due to the rotation of the rotation shaft 25, a substrate W may be dried by supplying an inert gas onto the substrate W. In this case, means for supplying the inert gas may be separately provided. Alternatively, the inert gas may be supplied to the substrate W from an inert gas supply source R13 or an inert gas supply source R23 using a multifunctional nozzle 50.
In a case where the substrate W is subjected to drying processing using the multifunctional nozzle 50, a chemical liquid or a rinse liquid is discharged through a flow path separated from the flow path through which an inert gas is discharged in order to prevent the chemical liquid and the rinse liquid from being mixed into the inert gas during the drying processing.
(8-2)
Although in the above-mentioned embodiment, the chemical liquid supply source R11, the rinse liquid supply source R12, the inert gas supply source R13, and the ejector E1 are connected to the inner flow path 50 a of the multifunctional nozzle 50, and the chemical liquid supply source R21, the rinse liquid supply source R22, the inert gas supply source R23, and the ejector E2 are connected to the outer flow path 50 b of the multifunctional nozzle 50, either one of the chemical liquid supply sources R11 and R21 may be provided, either one of the rinse liquid supply sources R12 and R22 may be provided, either one of the inert gas supply sources R13 and R23 may be provided, and either one of the ejectors E1 and E2 may be provided.
In a case where the operations shown in FIG. 4 are performed, for example, the rinse liquid supply source R12 connected to the inner flow path 50 a, and the chemical liquid supply source R21, the rinse liquid supply source R22, and the inert gas supply source R23 connected to the outer flowpath 50 b may not be provided.
In a case where the operations shown in FIG. 5 are performed, the chemical liquid supply source R21, the rinse liquid supply source R22, and the inert gas supply source R23 connected to the outer flow path 50 b may not be provided.
In a case where the operations shown in FIG. 6 are performed, the rinse liquid supply source R12 connected to the inner flow path 50 a, and the chemical liquid supply source R21 and the inert gas supply source R23 connected to the outer flow path 50 b may not be provided.
(8-3)
Although in the above-mentioned embodiment, description was made of a case where the multifunctional nozzle 50 is used in the cleaning processing units 5 a to 5 d for subjecting the substrate W to the cleaning processing, the present invention is not limited to the same. For example, the multifunctional nozzle 50 may be used in other processing units for processing a substrate with a chemical liquid.
(8-4)
Examples of processing with a chemical liquid include development processing of a substrate W, resist film coating processing, resist stripping processing, and polymer removal processing. When the substrate W is subjected to the development processing, an alkali solution such as TMAH (tetramethyl ammonium hydroxide) or an acid solution such as butyl acetate is used as the chemical liquid. During the resist film coating processing, a resist liquid (a photosensitive agent) is used as the chemical liquid. During the resist stripping processing, surfaced water or ozone water, for example, is used as the chemical liquid. During the polymer removal processing, an ammonium fluoride-based solution containing ammonium fluoride and phosphoric acid is used as the chemical liquid.

Correspondence Between Each Constituent Element in the claims and Part in the Embodiments

In the following paragraphs, non-limiting examples of correspondences between various elements recited in the claims below and those described above with respect to various preferred embodiments of the present invention are explained.
In the embodiments described above, the inner flow path 50 a is an example of a first flow path, the outer flow path 50 b is an example of a second flow path, the discharge port 51 a is an example of a first end opening, the discharge port 51 b is an example of a second end opening, the multifunctional nozzle 50 is an example of a nozzle, the ejectors E1 and E2, the supply suction pipes 63 and 64, and the pipes 63 d and 64 d are examples of a suction device.
Furthermore, the chemical liquid supply sources R11 and R21, the supply suction pipes 63 and 64, and the pipes 63 a and 64 a are examples of a chemical liquid supply system, the rinse liquid supply sources R12 and R22, the supply suction pipes 63 and 64, and the pipes 63 b and 64 b are examples of a rinse liquid supply system, the inert gas supply sources R13 and R23, the supply suction pipes 63 and 64, and the pipes 63 c and 64 c are examples of an inert gas supply system, the inner pipe 50A is an example of a first member, and the outer pipe 50B is an example of the second member.
As each of various elements recited in the claims, various other elements having configurations or functions described in the claims can be also used.
While preferred embodiments of the present invention have been described above, it is to be understood that variations and modifications will be apparent to those skilled in the art without departing the scope and spirit of the present invention. The scope of the present invention, therefore, is to be determined solely by the following claims.

Claims

1. A substrate processing apparatus comprising:

a nozzle that has a first flow path having a first end opening and a second flow path having a second end opening adjacent to said first end opening and discharges a chemical liquid for processing a substrate from said first end opening;

a chemical liquid supply system that is connected to said first flow path and supplies the chemical liquid; and

a suction device that is connected to said second flow path and applies suction through said second flow path.

2. The substrate processing apparatus according to claim 1, wherein said suction device applies suction through the second flow path after the discharge of the chemical liquid through said first flow path from said chemical liquid supply system is completed.

3. The substrate processing apparatus according to claim 1, wherein said suction device applies suction through said second flow path in a time period during which the chemical liquid is discharged through said first flow path from the chemical liquid supply system.

4. The substrate processing apparatus according to claim 1, further comprising a first guide member that is opposed to said first end opening and said second end opening and guides into said second end opening the chemical liquid discharged through said first flow path.

5. The substrate processing apparatus according to claim 1, further comprising an inert gas supply system that is connected to said first flow path and supplies an inert gas.

6. The substrate processing apparatus according to claim 5, wherein the inert gas is discharged through said first flow path from said inert gas supply system after the discharge of the chemical liquid through the first flow path from said chemical liquid supply system is completed.

7. The substrate processing apparatus according to claim 5, wherein said suction device applies suction through said second flow path in a time period during which the inert gas is discharged through said first flow path from said inert gas supply system.

8. The substrate processing apparatus according to claim 1, further comprising an inert gas supply system that is connected to said second flow path and supplies an inert gas.

9. The substrate processing apparatus according to claim 1, further comprising a rinse liquid supply system that is connected to said first flow path and supplies a rinse liquid.

10. The substrate processing apparatus according to claim 9, wherein the rinse liquid is discharged through said first flow path from said rinse liquid supply system after the discharge of the chemical liquid through said first flow path from said chemical liquid supply system is completed.

11. The substrate processing apparatus according to claim 9, wherein said suction device applies suction through said second flow path in a time period during which the rinse liquid is discharged through said first flow path from said rinse liquid supply system.

12. The substrate processing apparatus according to claim 11, further comprising a second guide member that is opposed to said first end opening and said second end opening and guides into said second end opening the rinse liquid discharged through said first flow path.

13. The substrate processing apparatus according to claim 1, further comprising a rinse liquid supply system that is connected to said second flowpath and supplies a rinse liquid.

14. The substrate processing apparatus according to claim 1, further comprising

an inert gas supply system that is connected to said first flow path and supplies an inert gas, and

a rinse liquid supply system that is connected to said first flow path and supplies a rinse liquid,

said suction device applying suction through said second flow path in a time period during which the chemical liquid is discharged through said first flow path from said chemical liquid supply system,

said suction device applying suction through said second flow path in a time period during which the rinse liquid is discharged through said first flow path from said rinse liquid supply system, and

said suction device applying suction through said second flow path in a time period during which the inert gas is discharged through said first flow path from said inert gas supply system.

15. A substrate processing apparatus comprising

a chemical liquid supply system that is connected to said first flow path and supplies the chemical liquid;

a suction device that is connected to said first flow path and applies suction through said first flow path; and

an inert gas supply system that is connected to said second flow path and supplies an inert gas.

16. The substrate processing apparatus according to claim 15, further comprising a rinse liquid supply system that is connected to at least one of said first flow path and said second flow path and supplies a rinse liquid.

17. A substrate processing apparatus comprising:

a rinse liquid supply system that is connected to said second flow path and supplies a rinse liquid.

18. The substrate processing apparatus according to claim 17, further comprising an inert gas supply system that is connected to at least one of said first flow path and said second flow path and supplies an inert gas.

19. The substrate processing apparatus according to claim 1, wherein either one of said first end opening and said second end opening is provided so as to surround the other end opening.

20. The substrate processing apparatus according to claim 19, wherein either one of said first flow path and said second flow path is formed within a tubular first member, and the other flow path is formed between said first member and a tubular second member having an inner peripheral surface surrounding an outer peripheral surface of said first member.

21. The substrate processing apparatus according to claim 20, wherein a tip of said second member projects farther than a tip of said first member.

22. The substrate processing apparatus according to claim 20, wherein said second member is so formed that the inner peripheral surface at its tip portion progressively comes closer to the outer peripheral surface of said first member toward its tip.

23. A substrate processing method comprising the steps of:

positioning a nozzle having a first flow path having a first end opening and a second flow path having a second end opening adjacent to said first end opening above a substrate;

discharging a chemical liquid through said first flow path after said step of positioning the nozzle above the substrate; and

applying suction through said second flow path during or after said step of discharging the chemical liquid.

24. The substrate processing apparatus according to claim 23, further comprising the step of discharging an inert gas through at least one of said first flow path and said second flow path during or after said step of discharging the chemical liquid.

25. The substrate processing apparatus according to claim 23, further comprising the step of discharging a rinse liquid through at least one of said first flow path and said second flow path during or after said step of discharging the chemical liquid.

26. The substrate processing apparatus according to claim 23, wherein said step of discharging the chemical liquid comprises said step of discharging the chemical liquid toward the substrate through said first flow path to process the substrate.

27. The substrate processing method according to claim 26, further comprising

a nozzle retracting step for retracting said nozzle from above the substrate after said step of processing the substrate,

said step of discharging the chemical liquid further comprising the step of discharging the chemical liquid through said first flow path after said nozzle retracting step, to clean a deposit of the chemical liquid adhering to the vicinity of the first end opening of said nozzle.