US20070090574A1 - Mold and imprint apparatus - Google Patents

Mold and imprint apparatus Download PDF

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Publication number
US20070090574A1
US20070090574A1 US11/468,862 US46886206A US2007090574A1 US 20070090574 A1 US20070090574 A1 US 20070090574A1 US 46886206 A US46886206 A US 46886206A US 2007090574 A1 US2007090574 A1 US 2007090574A1
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US
United States
Prior art keywords
mold
photocurable resin
pattern
surface layer
resin material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/468,862
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English (en)
Inventor
Atsunori Terasaki
Junichi Seki
Nobuhito Suehira
Hideki Ina
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Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Assigned to CANON KABUSHIKI KAISHA reassignment CANON KABUSHIKI KAISHA ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: INA, HIDEKI, SEKI, JUNICHI, TERASAKI, ATSUNORI, SUEHIRA, NOBUHITO
Publication of US20070090574A1 publication Critical patent/US20070090574A1/en
Priority to US13/094,354 priority Critical patent/US8568639B2/en
Abandoned legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0888—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using transparant moulds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00—Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0805—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation
    • B29C2035/0827—Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using electromagnetic radiation using UV radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • B29C2059/023—Microembossing

Definitions

  • the present invention relates to a mold and an imprint apparatus.
  • the technology can permit simultaneous processing of three-dimensional structure, so that it is expected to be applied to the following production technologies other than the semiconductor fabrication technology.
  • the technology is expected to be applied to various fields of production technologies including those of optical devices such as photonic crystal and those of a biochip such as micro total analysis system ( ⁇ -TAS).
  • ⁇ -TAS micro total analysis system
  • a work or workpiece constituted by disposing a layer of a photocurable resin material on a substrate such as a semiconductor wafer is prepared.
  • a mold having a processing surface (surface to be processed) on which a desired imprint pattern is formed is pressed against the work, followed by further pressure application and irradiation with ultraviolet light (ultraviolet rays) to cure the photocurable resin material.
  • ultraviolet light ultraviolet light
  • the processing by imprint is performed by transferring a shape of imprint pattern including a recess and a projection formed on a processing surface of a mold onto a member to be processed.
  • quartz silicon or fused silica
  • a layer (film) of Cr is generally used as a hard mask.
  • U.S. Patent Application Publication No. US2003/0205658 has disclosed polysilicon and silicide.
  • An object of the present invention is to provide a mold capable of adjusting a depth of an imprint pattern of the mold after the mold is prepared.
  • Another object of the present invention is to provide an imprint apparatus including the mold.
  • a mold for imprinting a pattern on a photocurable resin material comprising:
  • a mold substrate comprising a first material
  • a surface layer constituting a projection of the mold and comprising a second material, for forming a pattern on the photocurable resin material
  • first material is more etchable than the second material, and wherein the first material and the second material have optical transmittances capable of curing the photocurable resin material with respect to at least a part of wavelength range of ultraviolet light.
  • the mold according to the present invention is constituted so that it is possible to effect imprint while leaving a hard mask, used for etching, as a surface layer without removing the hard mask during formation of an imprint pattern onto a mold processing surface. Further, during adjustment of a depth of the imprint pattern, the mold is constituted so that the remaining surface layer can be used again as a mask for etching. Based on such a constitution, it is possible to adjust the depth of the pattern of the mold after the mold is prepared.
  • FIG. 1 is a schematic sectional view showing an embodiment of the mold according to the present invention.
  • FIGS. 2 ( a ) to 2 ( e ) are schematic sectional views for illustrating an embodiment of preparation steps of the mold of the present invention.
  • FIG. 3 is a schematic sectional view for illustrating the case where a depth of a recess of a mold is increased after the mold is prepared.
  • FIGS. 4 ( a ) to 4 ( c ) are schematic sectional views for illustrating the case where a depth of a recess of a mold is decreased after the mold is prepared.
  • FIGS. 5 ( a ) and 5 ( b ) are schematic sectional views for illustrating another embodiment of preparation steps of the mold of the present invention.
  • FIGS. 6 ( a ) to 6 ( f ) are schematic sectional views for illustrating a preparation process of a device using the mold of the present invention.
  • FIG. 7 is a schematic view for illustrating a constitution of an imprint apparatus including the mold of the present invention.
  • a deep depth of a recess of a mold used in imprint processing is not always better.
  • a shallow depth of a recess of the mold permits easier removal of the mold.
  • the mold recess has a deeper depth since a thicker resin layer is usable. In these circumstances, in the case of effecting optimum imprint, it is necessary to optimize a depth of an imprint pattern.
  • the inventors have come to recognition that it is possible to effect efficient imprint when the depth of the imprint pattern is adjustable after the mold is prepared.
  • a hard mask of Cr used during processing of mold is left without being removed and is used as a mold for adjusting a depth of the imprint pattern.
  • the hard mask of Cr has a very low transmittance to ultraviolet light, so that it is difficult to cure a photocurable resin material formed on a substrate by passing ultraviolet light through the hard mask of Cr.
  • a hard mask of polysilicon or silicide used as the hard mask as described in U.S. Patent Application Publication No. US2003/0205658 also has a very low transmittance to ultraviolet light. For this reason, it is similarly difficult to cure a photocurable resin material formed on a substrate.
  • the conventionally used hard mask materials such as Cr, polysilicon, and silicide are required to be removed before the imprint is effected. For this reason, they are not suitable for a mask for additional etching which is performed after the mold is once processed.
  • the mold according to the present invention includes a mold substrate formed of a first material and a surface layer constituting a projection of the mold.
  • the surface layer is formed of a second material and is a layer for forming a pattern on a photocurable resin material.
  • the first material is more etchable than the second material.
  • the first material and the second material have optical transmittances capable of curing the photocurable resin material with respect to at least a part of wavelength range of ultraviolet light.
  • a mold 103 is constituted by a mold substrate 101 formed of a first material and a surface layer 102 formed of a second material different from the first material.
  • the mold 103 has an imprint pattern formed at the surface of the mold substrate 101 and has a projection at which the surface layer 102 is provided.
  • the surface layer 102 is formed by leaving a hard mask, used when the imprint pattern is formed at a processing surface of the mold 103 , as it is without removing the hard mask.
  • the surface layer 102 is a layer which remains on the mold substrate 101 without being removed when the imprint is performed and which is used for pattern formation of a photocurable resin material. Further, the surface layer 102 is also a layer functioning as a mask during adjustment of a depth of the pattern of the mold after the imprint is effected.
  • the surface layer 102 When the surface layer 102 is used for the pattern formation of the photocurable resin material, it may directly contact the photocurable resin material. Further, the surface layer 102 may also indirectly contact the photocurable resin material through a release agent applied onto the surface layer 102 .
  • the surface layer 102 may be constituted in a single layer form or a multilayer form.
  • the first material for the mold substrate 101 and the second material for the surface layer 102 have optical transmittances capable of curing the photocurable resin material with respect to light in at least a part of wavelength range of ultraviolet light. As a result, the photocurable resin material can be cured, so that it is possible to effect imprint of the pattern formed on the mold surface.
  • the first material for the mold substrate 101 it is possible to use silicon oxide etc.
  • the second material for the surface layer 102 it is possible to use silicon nitride, titanium oxide, aluminum oxide, calcium fluoride, indium tin oxide (ITO), zinc oxide, etc.
  • the photocurable resin material is basically cured by increasing an amount of light exposure unless an optical transmittance to ultraviolet light is zero.
  • a somewhat high transmittance is required.
  • a film of silicon oxide used as the first material for the mold substrate 101 described above has an optical transmittance of approximately 90% with respect to the 365 nm wavelength light. Accordingly, in order not to considerably lower a throughput compared with the case of silicon oxide as the first material for the mold substrate 101 , it is desirable that the surface layer 102 at least has an optical transmittance of not less than 30%.
  • the mold substrate 101 and the surface layer 102 provide a large difference in optical transmittance, there is a possibility that an irregularity in degree of curing of the photocurable resin material is caused to occur. For this reason, the transmittances of both materials may preferably be as close as possible.
  • the second material for the surface layer 102 has an optical transmittance of not less than 80%.
  • the first material and the second material are a combination such that the first material is more etchable than the second material.
  • the first material In order to selectively remove the first material, it is necessary to increase an etching rate of the first material for the mold substrate 101 compared with an etching rate of the second material for the surface layer 102 .
  • the first material may be substantially removed selectively, so that some degree of the second material may also be removed.
  • the etching rate can be represented by a ratio of etched layer thickness to etching time (e.g., nm/min).
  • the first material for the mold substrate 101 is silicon oxide and the second material for the surface layer 102 is silicon nitride in the above described treatment condition, a ratio of etching rate of first material to etching rate of second material is approximately 10-30. Further, in the same treatment condition, the etching rate ratio of silicon oxide to a resist is approximately 3-8. Incidentally, in the case where the surface layer 102 is thinner than the resist mask layer, the etching rate ratio may desirably be not less than 20.
  • wet etching it is possible to use, e.g., hydrofluoric acid.
  • the wet etching is effective in formation of a pattern having a width exceeding several ten micrometers.
  • the depth of the mold varies depending on a width of a pattern to be formed but may preferably provide an aspect ratio, defined as (depth of mold)/(minimum width of pattern to be formed), of 0.5-10. Further, a ratio of the thickness of surface layer 102 to the depth of mold 103 may preferably be not less than 20%, e.g., in the case where the etching rate ratio is not less than 10 and the number of depth adjustment is not less than 3. The thickness of the mold substrate 101 may desirably be not less than several micrometers in consideration of mechanical strength.
  • the present invention is characterized in that the surface layer is not removed when the mold is completed, so that it is possible to adjust a depth of a recess of the mold even after the imprint is effected.
  • a step requiring much cost and time is a step of forming the imprint pattern.
  • FIGS. 2 ( a ) to 2 ( e ) are sectional views for illustrating preparation steps of a mold 103 in this embodiment.
  • a surface layer 102 is formed in a film on a mold substrate 101 ( FIG. 2 ( a )).
  • silicon oxide or the like is used as a first material for the mold substrate 101 .
  • silicon nitride titanium oxide, aluminum oxide, calcium fluoride, indium tin oxide (ITO), zinc oxide, etc.
  • the surface layer 102 may also be formed in a multilayer form in addition to the single layer form.
  • a resist 201 is disposed and patterned ( FIG. 2 ( b )).
  • the patterning may be effected by utilizing light exposure with a stepper or a scanner or electron beam drawing.
  • the mold substrate 101 is etched with the surface layer 102 as a mask layer ( FIG. 2 ( d )).
  • the etching is performed by reactive ion etching using gas having a high C/F ratio such as C 3 F 8 , C 4 F 8 , C 5 F 8 or C 4 F 6 , as source gas as described above.
  • the mold substrate 101 may also be etched by leaving the resist 201 and using the surface layer 102 and the resist 201 as the mask layer.
  • a mold of the present invention by stripping the resist 201 and then not subjecting the mold substrate 101 to etching ( FIG. 2 ( e )).
  • the surface layer 102 constitutes the entire projection of the mold 103 .
  • the surface layer 102 is formed on the mold substrate 101 and thereon the resist 201 is formed.
  • the surface layer 102 may also be provided by using a so-called lift-off method. More specifically, the resist 201 is formed on the mold substrate 101 and is partially removed by etching. Then, after the surface layer 102 is formed, the resist is stripped and then the mold substrate 101 is etched. In this manner, it is also possible to prepare the mold according to the present invention.
  • the mold 103 having the surface layer 102 which has been used as the hard mask during formation of an imprint pattern on a processing surface, left on the mold substrate 101 as shown in FIG. 1 is prepared.
  • the first material of the mold substrate 101 and the second material for the surface layer 102 which constitute the mold 103 have optical transmittances capable of curing a photocurable resin material with respect to light in at least a part of wavelength range of ultraviolet light.
  • Embodiment 2 A method of adjusting a depth of an imprint pattern of the mold according to the present invention after the mold is prepared will be described in Embodiment 2.
  • FIG. 3 is a sectional view for illustrating an embodiment in the case of increasing a depth of a recess of the mold after the mold is prepared.
  • additional etching of the mold substrate 101 is only effected by using the etching method described in Embodiment 1 while using the surface layer 102 as a mask layer. More specifically, a portion 301 at the recess of the mold substrate 101 is etched together with a portion 302 of the surface layer 102 .
  • FIGS. 4 ( a ) to 4 ( c ) are sectional views for illustrating an embodiment in the case of decreasing the depth of the recess of the mold after the mold is prepared.
  • a material 401 identical to that of the mold substrate 101 is formed in a layer so as to fully fill the recess of the mold 103 ( FIG. 4 ( a )).
  • the resultant structure is etched and flattened by etching a portion 402 of the layer 401 ( FIG. 4 ( b )), thus exposing the surface of the mold 103 ( FIG. 4 ( c )).
  • the remaining portion of the layer 401 is etched. More specifically, a portion 403 of the layer 401 is etched together with a portion 404 of the surface layer 102 ( FIG. 4 ( c )).
  • Embodiment 3 A modified embodiment of a production process of the mold according to the present invention will be described in Embodiment 3.
  • FIGS. 5 ( a ) and 5 ( b ) are sectional views for illustrating the modified embodiment of the mold production process.
  • the portions 302 and 404 of the surface layer 102 can also be somewhat etched. For this reason, the thickness of the surface layer 102 may desirably be increased. However, when a thick surface layer 102 is etched with the resist 201 as the mask layer, a shape of a side wall portion is deformed to lower an accuracy of pattern to be transferred onto the mold substrate 101 is some cases. For this reason, as shown in FIG. 5 ( a ), an additional hard mask layer 501 is provided between the resist 201 and the surface layer 102 .
  • the hard mask layer 501 is etched and then the surface layer 102 is etched using the hard mask layer 501 as a mask layer ( FIG. 5 ( b )).
  • the hard mask layer 501 As a material for the hard mask layer 501 , it is suitably possible to use a metal material such as Cr, WSi or Al. There is no problem even when the hard mask layer 501 is left on the surface layer 102 during etching of the mold substrate 101 in a subsequent step. However, the hard mask layer 501 is removed at least before imprint.
  • a metal material such as Cr, WSi or Al.
  • Embodiment 4 a device production process using the mold of the present invention and an imprint apparatus including the mold of the present invention will be described.
  • FIGS. 6 ( a ) to 6 ( f ) are sectional views for illustrating production steps for effecting imprint of an imprint pattern.
  • a photocurable resin material 602 is applied ( FIG. 6 ( a )).
  • the mold 103 and the substrate 601 are caused to come close to and contact each other ( FIG. 6 ( b )).
  • the resultant structure is irradiated with ultraviolet light 603 from a back side of the mold 103 to cure the photocurable resin material 602 ( FIG. 6 ( c )).
  • the mold 103 is moved away from the substrate 601 ( FIG. 6 ( d )), and a pattern is transferred onto the substrate 601 by etching ( FIG. 6 ( e )).
  • the photocurable resin material 602 is removed from the substrate 601 , the pattern is formed on the substrate 601 ( FIG. 6 ( f )).
  • examples of the material for the substrate 601 or its surface layer may include silicon, silicon oxide, silicon nitride, silicon carbide, an insulating film of low dielectric constant (low-k) material, aluminum, copper, gallium arsenide, gallium nitride, etc.
  • low-k low dielectric constant
  • examples of the material for the substrate 601 or its surface layer may include silicon, silicon oxide, silicon nitride, silicon carbide, an insulating film of low dielectric constant (low-k) material, aluminum, copper, gallium arsenide, gallium nitride, etc.
  • low-k low dielectric constant
  • FIG. 7 shows a constitution of the imprint apparatus including the mold of the present invention.
  • the imprint apparatus includes an exposure light source 701 , a mold holding portion 702 , a work holding portion 703 , a work pressing mechanism 704 , an in-plane moving mechanism 705 , and an imprint control mechanism.
  • the mold 103 and the substrate 601 are caused to contact each other through the photocurable resin material 602 .
  • Ultraviolet light emitted from the exposure light source 701 passes through the mold holding portion 702 and the mold 103 in this order and cures the photocurable resin material 602 . Then, the mold 103 and the substrate 601 are moved away from each other by the work pressing mechanism 704 . As desired, after the substrate 601 is moved by the in-plane moving mechanism 705 , a so-called step-and-repeat method in which transfer of the pattern in an area adjacent to the pattern-transferred area is performed again is effected.
  • the work pressing mechanism 704 and the in-plane moving mechanism 705 may also be provided on the mold holding portion 702 side.
  • Embodiment 5 a mold in which the first material and the second material described above have optical transmittances capable of being optically measured will be described.
  • efficient imprint can be effected when the depth of the imprint pattern is adjustable after the mold is prepared.
  • the mold for the hard mask used during the processing of mold it was possible to use Cr, polysilicon, silicide, etc. It is also possible to consider that the hard mask is used as a mask for adjusting the depth of the imprint pattern without being removed.
  • the mold is a mold for imprinting a pattern on a resin material such that it includes a mold substrate formed of a first material; and a surface layer, constituting a projection of the mold and formed of a second material, for forming a pattern on the photocurable resin material.
  • the mold is characterized in that the first material is more etchable than the second material, and wherein the first material and the second material have optical transmittances capable of being optically measured.
  • silicon oxide or the like can be used as the material for the mold substrate.
  • the material for the surface layer similarly as in Embodiment 1, it is possible to use silicon nitride, titanium oxide, aluminum oxide, calcium fluoride, ITO, zinc oxide, etc.
  • the mold in this embodiment is also applicable to other optical measurements, such as those for a reflectance at the substrate surface, an interference of distance between the mold and the substrate, and absorptivity of resin material.

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Toxicology (AREA)
  • Oral & Maxillofacial Surgery (AREA)
  • Thermal Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
US11/468,862 2005-09-06 2006-08-31 Mold and imprint apparatus Abandoned US20070090574A1 (en)

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JP2005257394 2005-09-06
JP257394/2005(PAT.) 2005-09-06
JP194266/2006(PAT.) 2006-07-14
JP2006194266A JP4262267B2 (ja) 2005-09-06 2006-07-14 モールド、インプリント装置及びデバイスの製造方法

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Cited By (8)

* Cited by examiner, † Cited by third party
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US20050287820A1 (en) * 2002-06-20 2005-12-29 Torbjorn Ling Mold for nano imprinting
US20070054097A1 (en) * 2005-09-06 2007-03-08 Canon Kabushiki Kaisha Mold, imprint apparatus, and process for producing structure
US20070176320A1 (en) * 2006-02-01 2007-08-02 Canon Kabushiki Kaisha Mold for imprint, process for producing minute structure using the mold, and process for producing the mold
US20070190786A1 (en) * 2006-02-15 2007-08-16 Kenji Murao Site-selectively modified micro-and nanostructures and the methods of their fabrication
US20080061214A1 (en) * 2006-09-13 2008-03-13 Samsung Electronics Co., Ltd. Mold for nano-imprinting and method of manufacturing the same
US20090152753A1 (en) * 2005-09-06 2009-06-18 Canon Kabushiki Kaisha Mold, imprint method, and process for producing a chip
US20140170307A1 (en) * 2012-12-14 2014-06-19 Kabushiki Kaisha Toshiba Method for cleaning imprinting mask
US20140306090A1 (en) * 2013-04-10 2014-10-16 Hon Hai Precision Industry Co., Ltd. Mold core and method for manufacturing same

Families Citing this family (3)

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Publication number Priority date Publication date Assignee Title
JP4862033B2 (ja) * 2007-12-19 2012-01-25 旭化成株式会社 光吸収性を有するモールド、該モールドを利用する感光性樹脂のパターン形成方法、及び印刷版の製造方法
JP5899931B2 (ja) * 2012-01-06 2016-04-06 大日本印刷株式会社 ナノインプリント用テンプレート及びその製造方法
JP5944436B2 (ja) * 2014-05-29 2016-07-05 大日本印刷株式会社 パターンの形成方法およびテンプレートの製造方法

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