US20060119811A1 - Radiation exposure apparatus comprising a gas flushing system - Google Patents

Radiation exposure apparatus comprising a gas flushing system Download PDF

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Publication number
US20060119811A1
US20060119811A1 US11/036,186 US3618605A US2006119811A1 US 20060119811 A1 US20060119811 A1 US 20060119811A1 US 3618605 A US3618605 A US 3618605A US 2006119811 A1 US2006119811 A1 US 2006119811A1
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United States
Prior art keywords
gas
radiation
substrate
target portion
constructed
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Abandoned
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US11/036,186
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English (en)
Inventor
Klaus Simon
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ASML Netherlands BV
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ASML Netherlands BV
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Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Priority to US11/036,186 priority Critical patent/US20060119811A1/en
Assigned to ASML NETHERLANDS B.V. reassignment ASML NETHERLANDS B.V. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SIMON, KLAUS
Priority to SG200507762A priority patent/SG123681A1/en
Priority to CNA2005101380850A priority patent/CN1797220A/zh
Priority to JP2005350407A priority patent/JP2006186352A/ja
Priority to TW094142799A priority patent/TW200628997A/zh
Priority to US11/294,348 priority patent/US7570342B2/en
Priority to EP05257485A priority patent/EP1669809A3/en
Priority to KR1020050118097A priority patent/KR100749943B1/ko
Publication of US20060119811A1 publication Critical patent/US20060119811A1/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants

Definitions

  • This invention relates to a radiation exposure apparatus, e.g. a lithographic projection apparatus, and more particularly to an exposure apparatus including a gas flushing system. Also, this invention relates to methods concerning exposing a substrate to radiation.
  • CMOS Complimentary Metal Oxide Semiconductor
  • the present invention provides a method of manufacturing a device, e.g. an image sensor, comprising:
  • the present invention provides a method comprising:
  • the present invention provides a lithographic projection apparatus comprising:
  • the present invention provides a lithographic projection apparatus comprising:
  • a radiation system constructed and arranged to supply a projection beam of radiation
  • a support structure constructed and arranged to support a patterning structure, the patterning structure constructed and arranged to pattern the projection beam according to a desired pattern;
  • a substrate support constructed and arranged to support a substrate
  • a projection system constructed and arranged to project the patterned beam onto a target portion of the substrate
  • a gas flushing system that creates a laminar flow in a first direction across said substrate, and further creates a secondary flow having portions thereof traveling in at least one direction substantially different from said first direction, said secondary flow being generally below said laminar flow, the gas flushing system further creating a gas flow in between said laminar flow and said secondary flow designed to remove gas introduced by at least said secondary flow.
  • the present invention provides a lithographic projection apparatus comprising:
  • a radiation system constructed and arranged to supply a projection beam of radiation
  • a support structure constructed and arranged to support a patterning structure, the patterning structure constructed and arranged to pattern the projection beam according to a desired pattern;
  • a substrate support constructed and arranged to support a substrate
  • a projection system constructed and arranged to project the patterned beam onto a target portion of the substrate
  • a gas flushing system that includes a first outlet that generates a laminar flow in a first direction, generally parallel to an upper surface of said substrate, and a second outlet that directs gas in a direction towards said target portion.
  • the present invention provides a process comprising exposing a portion of a substrate having one or more color filter resist layers to radiation and extracting gases emanating from the portion being exposed with a gas flushing system.
  • the present invention provides an apparatus for the manufacturing of image sensors, wherein the apparatus comprises a gas flushing system for removal of gases emanating from, e.g., one or more color filter resist layers.
  • FIG. 1 represents an exposure apparatus according to an embodiment of the present invention.
  • FIG. 2 represents a cross-sectional front view of an embodiment of a gas flushing system according to the present invention.
  • FIGS. 3 a - c represent several embodiments of a bottom view of a gas flushing system and final lens element of a projection system according to the present invention.
  • patterning structure used herein should be broadly interpreted as referring to structure that may be used to endow an incoming radiation beam with a patterned cross-section, corresponding to a pattern that is to be created in a target portion of the substrate; the term “light valve” may also be used in this context.
  • the said pattern will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit or other device (see below). Examples of such patterning structure include:
  • a mask The concept of a mask is well known in lithography, and it includes mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. Placement of such a mask in the radiation beam causes selective transmission (in the case of a transmissive mask) or reflection (in the case of a reflective mask) of the radiation impinging on the mask, according to the pattern on the mask.
  • the support structure will generally be a mask table, which ensures that the mask may be held at a desired position in the incoming radiation beam, and that it may be moved relative to the beam if so desired;
  • An array of individually controllable elements for instance a programmable mirror array or a programmable LCD array.
  • a programmable mirror array is a matrix-addressable surface having a viscoelastic control layer and a reflective surface.
  • the basic principle behind such an apparatus is that (for example) addressed areas of the reflective surface reflect incident light as diffracted light, whereas unaddressed areas reflect incident light as undiffracted light.
  • the undiffracted light may be filtered out of the reflected beam, leaving only the diffracted light behind; in this manner, the beam becomes patterned according to the addressing pattern of the matrix-addressable surface.
  • An alternative embodiment of a programmable mirror array employs a matrix arrangement of tiny mirrors, each of which may be individually tilted about an axis by applying a suitable localized electric field, or by employing piezoelectric actuation means.
  • the mirrors are matrix-addressable, such that addressed mirrors may reflect an incoming radiation beam in a different direction to unaddressed mirrors; in this manner, the reflected beam is patterned according to the addressing pattern of the matrix-addressable mirrors.
  • the matrix addressing may be performed using suitable electronic devices.
  • the patterning structure may comprise one or more programmable mirror arrays. More information on mirror arrays as here referred to may be gleaned, for example, from U.S.
  • the said support structure may be embodied as a frame or table, for example, which may be fixed or movable as required.
  • a programmable LCD array An example of a programmable LCD array is given in, for instance, U.S. Pat. No. 5,229,872, which is incorporated herein by reference.
  • the support structure in this case may be embodied as a frame or table, for example, which may be fixed or movable as required.
  • the projection system may hereinafter be referred to as the “lens”; however, this term should be broadly interpreted as encompassing various types of projection system, including refractive optics, reflective optics, and catadioptric systems, for example.
  • the radiation system may also include components operating according to any of these design types for directing, shaping or controlling the projection beam of radiation, and such components may also be referred to below, collectively or singularly, as a “lens”.
  • the lithographic apparatus may be of a type having two or more substrate tables (and/or two or more mask tables). In such “multiple stage” devices the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposures. Dual stage lithographic apparatus are described, for example, in U.S. Pat. No. 5,969,441 and WO 98/40791, both incorporated herein by reference.
  • outlet as used herein may also be considered or termed as an outlet port.
  • inlet as used herein may also be considered or termed as an inlet port. It should be understood that the terms outlet, outlet port, inlet and inlet port broadly refer to a structure through which a gas or substance flows.
  • a pattern (e.g. in a mask) may be imaged onto a substrate that is at least partially covered by a layer of radiation-sensitive material (resist).
  • the substrate Prior to this imaging step, the substrate may undergo various procedures, such as priming, resist coating and a soft bake. After exposure, the substrate may be subjected to other procedures, such as a post-exposure bake (PEB), development, a hard bake and measurement/inspection of the imaged features.
  • PEB post-exposure bake
  • This array of procedures is used as a basis to pattern an individual layer of a device, e.g. an image sensor, a flat panel display, or an integrated ciruit.
  • Such a patterned layer may then undergo various processes such as etching, ion-implantation (doping), metallization, oxidation, chemo-mechanical polishing, etc., all intended to finish off an individual layer. If several layers are required, then the whole procedure, or a variant thereof, may be repeated for each new layer. Eventually, an array of devices will be present on the substrate (wafer). These devices are then separated from one another by a technique such as dicing or sawing, whence the individual devices may be mounted on a carrier, connected to pins, etc.
  • FIG. 1 schematically depicts a lithographic apparatus according to a particular embodiment of the invention.
  • the apparatus comprises:
  • an illumination system (illuminator) IL for providing a projection beam PB of radiation (e.g. UV radiation or DUV radiation).
  • PB of radiation e.g. UV radiation or DUV radiation.
  • a first support structure e.g. a mask table
  • patterning means e.g. a mask
  • first positioning means PM for accurately positioning the patterning means with respect to projection system PL;
  • a substrate table e.g. a wafer table
  • a substrate e.g. a resist-coated wafer
  • second positioning means PW for accurately positioning the substrate with respect to projection system PL;
  • a projection system e.g. a refractive projection lens
  • PL for imaging a pattern imparted to the projection beam PB by patterning means MA onto a target portion C (e.g. comprising one or more dies) of the substrate W;
  • gas flushing system GF As depicted here, the gas flushing system is secured via a frame. However, the flushing system GF may be secured in any suitable manner.
  • the apparatus is of a transmissive type (e.g. employing a transmissive mask).
  • the apparatus may be of a reflective type (e.g. employing a programmable mirror array of a type as referred to above).
  • the illuminator IL receives a beam of radiation from a radiation source SO.
  • the radiation source supplies radiation of at least 126 nm, e.g. at least 157 nm or at least 193 nm, for instance in the range of 193-435 nm or, such as 193 nm, 248 nm, or 365 nm, or in the range of 220-435 nm.
  • the source and the lithographic apparatus may be separate entities, for example when the source is an excimer laser.
  • the source is not considered to form part of the lithographic apparatus and the radiation beam is passed from the source SO to the illuminator IL with the aid of a beam delivery system BD comprising for example suitable directing mirrors and/or a beam expander.
  • the source may be integral part of the apparatus, for example when the source is a mercury lamp.
  • the source SO and the illuminator IL, together with the beam delivery system BD if required, may be referred to as a radiation system.
  • the illuminator IL may comprise adjusting means AM for adjusting the angular intensity distribution of the beam.
  • adjusting means AM for adjusting the angular intensity distribution of the beam.
  • at least the outer and/or inner radial extent (commonly referred to as ⁇ -outer and ⁇ -inner, respectively) of the intensity distribution in a pupil plane of the illuminator may be adjusted.
  • the illuminator IL generally comprises various other components, such as an integrator IN and a condenser CO.
  • the illuminator provides a conditioned beam of radiation, referred to as the projection beam PB, having a desired uniformity and intensity distribution in its cross-section.
  • the projection beam PB is incident on the mask MA, which is held on the mask table MT. Having traversed the mask MA, the projection beam PB passes through the lens PL, which focuses the beam onto a target portion C of the substrate W.
  • the substrate table WT may be moved accurately, e.g. so as to position different target portions C in the path of the beam PB.
  • the first positioning means PM and another position sensor may be used to accurately position the mask MA with respect to the path of the beam PB, e.g. after mechanical retrieval from a mask library, or during a scan.
  • the mask table MT may be connected to a short stroke actuator only, or may be fixed.
  • Mask MA and substrate W may be aligned using mask alignment marks M 1 , M 2 and substrate alignment marks P 1 , P 2 .
  • step mode the mask table MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the projection beam is projected onto a target portion C in one go (i.e. a single static exposure).
  • the substrate table WT is then shifted in the X and/or Y direction so that a different target portion C may be exposed.
  • step mode the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure.
  • the mask table MT and the substrate table WT are scanned synchronously while a pattern imparted to the projection beam is projected onto a target portion C (i.e. a single dynamic exposure).
  • the velocity and direction of the substrate table WT relative to the mask table MT is determined by the (de-)magnification and image reversal characteristics of the projection system PL.
  • the maximum size of the exposure field limits the width (in the non-scanning direction) of the target portion in a single dynamic exposure, whereas the length of the scanning motion determines the height (in the scanning direction) of the target portion.
  • the mask table MT is kept essentially stationary holding a programmable patterning means, and the substrate table WT is moved or scanned while a pattern imparted to the projection beam is projected onto a target portion C.
  • a pulsed radiation source is employed and the programmable patterning means is updated as required after each movement of the substrate table WT or in between successive radiation pulses during a scan.
  • This mode of operation may be readily applied to maskless lithography that utilizes programmable patterning means, such as a programmable mirror array of a type as referred to above.
  • FIG. 2 represents an embodiment of the gas flushing system GF in more detail.
  • Gas flushing system GF comprises a first gas outlet GO- 1 and a second gas outlet GO- 2 .
  • GO- 1 and GO- 2 are connected via gas supply channel GC to a flushing gas supply (not shown) comprising a gas source (not shown) and optionally a flow regulator (not shown).
  • a flushing gas supply (not shown) comprising a gas source (not shown) and optionally a flow regulator (not shown).
  • both GO- 1 and GO- 2 receive gas from a single source.
  • GO- 1 and GO- 2 may also each have a separate gas supply channel, whereby the separate gas supply channels may receive gas from the same source or each may receive gas from a separate gas source.
  • at least gas outlet GO- 1 receives an oxygen containing gas.
  • at least 1 mole % of the gas supplied to GO- 1 is oxygen, for instance at least 5 mole %, at least 10 mole %, for instance 10-50 mole % or 10-30 mole %.
  • the gas supplied to GO- 1 is air.
  • GO- 2 receives an inert gas, for instance nitrogen, argon, helium, xenon, or mixtures thereof. In other embodiments, both GO- 1 and GO- 2 receive an inert gas or an oxygen containing gas.
  • At least part of the gas exiting GO- 1 is directed towards the target portion of substrate W that is being exposed to the radiation exiting the projection system PL (i.e., at least part of the gas exiting GO- 1 is directed towards the substrate and angled towards the area being exposed to the radiation). In one embodiment, essentially all gas exiting GO- 1 is directed towards the target portion of substrate W that is being exposed to the radiation exiting the projection system PL (only the bottom section of projection system PL is shown).
  • the gas flow from outlet GO- 1 is adjusted such that, at the used substrate table (or substrate support) velocity, the velocity of the radial gas flow, at every location in the space between the gas flushing system and the substrate is higher than zero and directed inwards, i.e. towards the area between the substrate and the projection system.
  • the radial gas flow velocity is the vectorial sum of gas flow speed created at the outlet(s) GO- 1 and the substrate table velocity.
  • substrate table velocity includes, e.g., the substrate table (or substrate support) scanning velocity of a step-and-scan type lithographic projection apparatus, as well as, in the case of a step-and-repeat type lithographic projection apparatus, the velocity of the wafer table between subsequent exposures.
  • gas flushing system GF comprises a gas inlet GI for extracting gas from the space between the target portion being exposed and the projection system.
  • Gas inlet GI is connected via channel GIC to a gas extraction system (not shown), which may include a vacuum pump and/or a fan for facilitating the removal of the gas.
  • the gas extraction system may include a flow regulator.
  • the gas flushing system comprises one or more sensors, e.g. for determining the amount and/or type of harmful gases entering the area between the substrate and the projection system.
  • the one or more sensors may be used to adjust the composition and/or rate of the flushing gas, e.g. relative to the amount and/or type of harmful gases entering the area between the substrate and the projection system.
  • the gas flushing system GF has a circular construction and, along its inner circumference, only part of the gas flushing system is provided with a gas outlet section GO- 2 .
  • gas outlet ports GO- 2 are provided all along the inner circumference of the gas flushing system, and in FIG. 3 c the gas flushing system GF is provided with opposing gas outlet ports.
  • gas outlet port(s) GO- 2 provide a laminar flow substantially parallel to the surface of the substrate and/or the surface of the bottom lens of projection system PL.
  • the gas flushing system is useful in processes where there is a risk of harmful gases evaporating from a substrate during exposure to radiation. Such gases may, for instance, damage the projection system or surrounding parts, which may in turn require increased maintenance and/or shorten the lifetime of the projection system or surrounding parts.
  • the gas flushing system of the present invention is helpful in preventing such damage by substantially preventing harmful gases from reaching the projection system or surrounding parts.
  • Substrates that are prone to releasing gases are, for instance, substrates coated with one or more resist layers. Particularly, substrates coated with resist layers for one or more color filter layers may be susceptible to releasing gases. Substrates coated with resist layers for one or more color filter layers may be used in the manufacturing of image sensors, for instance image sensors useful in cameras (e.g. photocameras or videocameras).

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  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
US11/036,186 2004-12-07 2005-01-18 Radiation exposure apparatus comprising a gas flushing system Abandoned US20060119811A1 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
US11/036,186 US20060119811A1 (en) 2004-12-07 2005-01-18 Radiation exposure apparatus comprising a gas flushing system
SG200507762A SG123681A1 (en) 2004-12-07 2005-12-02 Radiation exposure apparatus comprising a gas flushing system
CNA2005101380850A CN1797220A (zh) 2004-12-07 2005-12-05 包含气体冲洗系统的辐射曝光装置
JP2005350407A JP2006186352A (ja) 2004-12-07 2005-12-05 ガス・フラッシング・システムを備える放射線露光装置
TW094142799A TW200628997A (en) 2004-12-07 2005-12-05 Radiation exposure apparatus comprising a gas flushing system
US11/294,348 US7570342B2 (en) 2004-12-07 2005-12-06 Radiation exposure apparatus comprising a gas flushing system
EP05257485A EP1669809A3 (en) 2004-12-07 2005-12-06 Radiation exposure apparatus comprising a gas flushing system
KR1020050118097A KR100749943B1 (ko) 2004-12-07 2005-12-06 가스 플러싱 시스템, 가스 플러싱 시스템을 포함하는 리소그래피 투영 장치, 및 디바이스 제조 방법

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Application Number Priority Date Filing Date Title
US63372704P 2004-12-07 2004-12-07
US11/036,186 US20060119811A1 (en) 2004-12-07 2005-01-18 Radiation exposure apparatus comprising a gas flushing system

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US11/036,186 Abandoned US20060119811A1 (en) 2004-12-07 2005-01-18 Radiation exposure apparatus comprising a gas flushing system
US11/294,348 Expired - Fee Related US7570342B2 (en) 2004-12-07 2005-12-06 Radiation exposure apparatus comprising a gas flushing system

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US (2) US20060119811A1 (ja)
EP (1) EP1669809A3 (ja)
JP (1) JP2006186352A (ja)
KR (1) KR100749943B1 (ja)
CN (1) CN1797220A (ja)
SG (1) SG123681A1 (ja)
TW (1) TW200628997A (ja)

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US20180017880A1 (en) * 2016-06-17 2018-01-18 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and a Method of Forming a Particle Shield
US10095130B2 (en) 2015-04-20 2018-10-09 Asml Netherlands B.V. Lithographic apparatus and method in a lithographic process
US20190094719A1 (en) * 2016-06-17 2019-03-28 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and a Method of Forming a Particle Shield
WO2021249705A1 (en) * 2020-06-09 2021-12-16 Asml Netherlands B.V. Fluid purging system
US11397385B2 (en) 2016-06-17 2022-07-26 Taiwan Semiconductor Manufacturing Company, Ltd Apparatus and a method of forming a particle shield

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KR100727847B1 (ko) * 2005-09-07 2007-06-14 세메스 주식회사 기판 가장자리 노광 장치
JP4814610B2 (ja) * 2005-10-25 2011-11-16 株式会社ニューフレアテクノロジー 吸引補助具
IL183693A0 (en) * 2007-06-05 2007-09-20 Nova Measuring Instr Ltd Optical method and system
JP5448724B2 (ja) 2009-10-29 2014-03-19 キヤノン株式会社 露光装置及びデバイスの製造方法
NL2006243A (en) * 2010-03-19 2011-09-20 Asml Netherlands Bv A lithographic apparatus, an illumination system, a projection system and a method of manufacturing a device using a lithographic apparatus.
US10018920B2 (en) * 2016-03-04 2018-07-10 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography patterning with a gas phase resist
CN107552258B (zh) * 2016-07-01 2019-06-07 江苏鲁汶仪器有限公司 气体喷射装置
CN109283797B (zh) * 2017-07-21 2021-04-30 上海微电子装备（集团）股份有限公司 物镜保护装置、物镜系统以及光刻设备
KR20230007510A (ko) * 2020-06-04 2023-01-12 에이에스엠엘 네델란즈 비.브이. 유체 퍼징 시스템, 투영 시스템, 조명 시스템, 리소그래피 장치, 및 방법
CN114460814B (zh) * 2022-01-20 2024-04-02 中国科学院微电子研究所 光刻设备、气浴装置及其气浴发生器

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US7570342B2 (en) 2009-08-04
EP1669809A2 (en) 2006-06-14
SG123681A1 (en) 2006-07-26
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JP2006186352A (ja) 2006-07-13
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