US20050045275A1 - Plasma treatment apparatus and surface treatment apparatus of substrate - Google Patents

Plasma treatment apparatus and surface treatment apparatus of substrate Download PDF

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Publication number
US20050045275A1
US20050045275A1 US10/926,262 US92626204A US2005045275A1 US 20050045275 A1 US20050045275 A1 US 20050045275A1 US 92626204 A US92626204 A US 92626204A US 2005045275 A1 US2005045275 A1 US 2005045275A1
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Prior art keywords
plasma
chamber
substrate
depressurization
treatment apparatus
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English (en)
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Koji Murayama
Hiroki Fujimoto
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Kyocera Corp
Innolux Corp
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Individual
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Assigned to KYOCERA CORPORATION, CHI MEI OPTOELECTRONICS CORP. reassignment KYOCERA CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: FUJIMOTO, HIROKI, MURAYAMA, KOJI
Publication of US20050045275A1 publication Critical patent/US20050045275A1/en
Assigned to CHIMEI INNOLUX CORPORATION reassignment CHIMEI INNOLUX CORPORATION MERGER (SEE DOCUMENT FOR DETAILS). Assignors: CHI MEI OPTOELECTRONICS CORP.
Assigned to Innolux Corporation reassignment Innolux Corporation CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: CHIMEI INNOLUX CORPORATION
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers

Definitions

  • the present invention relates to a plasma treatment apparatus capable of uniformly treating a surface of a substrate having a larger area than a cross sectional area of a plasma introductory part, and a surface treatment apparatus for treating a surface of a substrate by a gas plasma.
  • a semiconductor apparatus and an OLED (organic light emitting diode) display in which a conductive thin film formed on a substrate, a surface of the conductive thin film is plasma-treated so as to improve or stabilize properties thereof.
  • OLED organic light emitting diode
  • a thin film containing a fluorescent or phosphorescent organic chemical compound is sandwiched between an anode electrode and a cathode electrode.
  • positive holes and electrons are injected into the thin film from the anode electrode's side and the cathode electrode's side, respectively, so as to recombine them. Due to energy that is discharged by this recombination, the fluorescent or phosphorescent organic chemical compound is excited to emit light. Accordingly, it is preferable to deposit a plurality of chemical compounds so that ionized potential (Ip) is made smaller from the anode electrode's side toward the cathode electrode's side.
  • Ip ionized potential
  • FIG. 5 is a perspective view of a substantial part of a structure of an OLED display during manufacture
  • FIG. 6 is sectional view of a substantial part of the OLED display taken on a line of A-A of FIG. 5
  • a reference numeral 10 denotes an insulating substrate such as glass
  • reference numerals 12 a and 12 b denote a pair of thin film transistors formed on the insulating substrate 10 .
  • a reference numeral 14 denotes a layer that is connected to an electrode through which a main electric current of the thin film transistor 12 a passes, for example, a drain electrode wiring layer that is connected to a drain electrode.
  • a source electrode wiring layer through which the main electric current passes, a power source wire, a grounding wire, and a gate electrode wire of the thin film transistor 12 b are formed, however, they are omitted in the drawings.
  • a reference numeral 16 denotes a resin insulating layer which coats the surface of the insulating substrate 10 so as to smooth out the irregularities of the surface of the insulating substrate 10 which are caused by the thin film transistor 12 or the like.
  • the resin insulating layer 16 is formed from an acrylic transparent resin, for example.
  • a reference numeral 18 denotes a through hole that is formed in a portion of the resin insulating layer 16 . A diameter of the through hole 18 is made smaller from an opening top toward a bottom, and the drain electrode wiring layer 14 is exposed at its bottom.
  • Reference numerals 20 a and 20 b denote electrode wiring layers formed on the resin insulating layer 16 , respectively.
  • the electrode wiring layer 20 a is connected to a power source (not shown), while the other electrode wiring layer 20 b is electrically connected to the drain electrode wiring layer 14 at the bottom of the through hole 18 . Therefore, the electrode wiring layer 20 b and the thin film transistor 12 a are electrically connected through the drain electrode wiring layer 14 .
  • a reference numeral 22 denotes an edge insulating layer which coats the surface of the resin insulating layer 16 . In the edge insulating layer 22 , a portion of the electrode wiring layer 20 a is exposed through a window 22 a to form an anode electrode 24 and to form a window 22 b at the through hole 18 .
  • a reference numeral 26 denotes resin deposited layers that are placed opposite to each other and that sandwich an area including the anode electrode 24 and the through hole 18 , and their opposed walls are inversely tapered.
  • a reference numeral 28 denotes an OLED layer formed on the anode electrode 24 and the OLED layer 28 is formed through a metallic mask (not illustrated).
  • an opening of the resin deposited layer 26 is used as a portion of the mask and an end of the OLED layer 28 is spaced apart from a base portion of the resin deposited layer 26 .
  • a reference numeral 30 denotes a cathode electrode wiring layer formed through a metallic mask (not shown) on the OLED layer 28 and the resin insulating layer 16 except for an anode electrode wiring layer 20 .
  • the cathode electrode wiring layer 30 is formed using the opening of the resin deposited layer 26 as a portion of the mask, and a portion of the cathode electrode wiring layer 30 which overlaps the OLED layer 28 is formed as a cathode electrode 32 .
  • This cathode electrode wiring layer 30 is connected to the drain electrode wiring layer 14 formed on the insulating substrate 10 through the through hole 18 formed in the edge insulating layer 22 .
  • the OLED display shown in FIG. 6 is hermetically sealed by putting the transparent glass substrate thereon.
  • the OLED display is used as a light emitting apparatus or a display unit by releasing the light emitted from the OLED layer 28 from the transparent glass through the cathode electrode wiring layer 30 .
  • Such OLED display is called a top-emission OLED display.
  • the light emitted from the OLED layer 28 to the anode electrode 24 is reflected on the surface of the anode electrode 24 so as to enhance the brightness.
  • the anode electrode 24 functions as a source for injecting positive holes into the OLED layer 28 and is associated with efficiency of light emission of the OLED layer 28 . Accordingly, as a material of an electrode, a material having a large work function is desired.
  • a material with high reflectivity is selected for the anode electrode wiring layer 20 and the anode electrode 24 .
  • AlNd or the like is used.
  • the anode electrode 24 from an electrode material satisfying different properties of the working function and the reflectivity.
  • ITO and Nickel inherently have large work functions, so that positive holes can be injected therein very well only by cleaning their surfaces through a cleaning processing and then oxidizing the surfaces.
  • a drawback to the ITO and Nickel is low reflectivity.
  • aluminum and aluminum base alloy have high reflectivity and can be easily handled.
  • their working functions are small, so that it is necessary to form a functional organic film after the cleaning processing in order to enhance their working functions.
  • the surface of the anode electrode 24 is cleaned before forming the OLED layer 28 .
  • Such cleaning enhances the working function and the reflectivity of the anode electrode 24 .
  • an functional organic film is formed on the cleaned surface of the electrode.
  • cleaning process is carried out by ozone UV-O 3 which is generated by applying ultraviolet rays to a substrate to be surface-treated in oxygen atmosphere.
  • ozone UV-O 3 there are few damages in the resin structures 16 , 22 , and 26 located at the edge of the anode electrode 24 .
  • the functional organic film cannot be formed on the surface of the electrode in succession from the cleaning operation, an additional equipment is needed.
  • a plasma treatment apparatus does not require any additional equipment.
  • the surface of the electrode can be cleaned by oxygen plasma and a functional organic film can be formed on the cleaned surface of the electrode by using a different material gas.
  • a typical parallel flat plate type plasma treatment apparatus two parallel electrodes are placed opposite to each other in a depressurization chamber and a substrate is provided between the parallel electrodes. When high-frequency power is applied between the parallel electrodes, gas in the depressurization chamber is reacted and thus plasma is generated.
  • the structure of the apparatus is simple and the substrate can be provided between the parallel plate electrodes, even a large substrate can be uniformly treated.
  • high-density plasma is generated by adding a micro wave and a magnetic filed from an electromagnet in a plasma generation chamber connected to the depressurization chamber and setting intensity of the magnetic field in such a manner that an electron cyclotron resonance condition is satisfied.
  • a large substrate can also be treated.
  • the ECR plasma treatment apparatus high-density plasma generated at a plasma generation source is diffused in the depressurization chamber in which the substrate is provided so as to expose the substrate to such plasma. Therefore, the ECR plasma treatment apparatus can prevent the damage of the coating resin.
  • the plasma introductory part of the depressurization chamber is away from the substrate, if the opening diameter of the plasma introductory part is small, the plasma introduced in the depressurization chamber is scattered in all directions. Therefore, the electrodes on the flat substrate cannot be uniformly treated in the ECR plasma treatment apparatus and the unevenness of the treatment is severe in the large substrate.
  • a diffuser a diffusion plate
  • Many diffusers have been manufactured by way of trial under various conditions by changing a hole diameter and a space between the holes, for example, and the treatment states have been observed.
  • such conventional diffusers cannot solve a big difference in a cleaning level of the electrodes between a center portion and a marginal area of a large substrate.
  • the ECR plasma treatment apparatus requires an electromagnet and advanced control apparatus, so that the apparatus has a complicated structure and is expensive.
  • ICP inductive coupled plasma
  • an object of the present invention is to provide a plasma treatment apparatus which comprises: a plasma generation chamber for activating gas supplied thereto so as to generate plasma; a depressurization chamber which is connected to the plasma generation chamber and which accommodates a member to be plasma-treated; and a diffuser which is provided at a joint part of the plasma generation chamber and the depressurization chamber, which guides the plasma in a direction inclined to a gas flow path of the plasma generation chamber, and which introduces the plasma into the depressurization chamber while diffusing the plasma in the depressurization chamber.
  • the present invention provides a surface treatment apparatus which comprises: a plasma generation chamber for activating gas supplied thereto so as to generate plasma; a depressurization chamber which is connected to the plasma generation chamber and which accommodates a substrate with a conductive thin film and an organic thin film formed on a main surface thereof; and a diffuser which is provided at a joint part of the plasma generation chamber and the depressurization chamber, which guides the plasma in a direction inclined to a gas flow path of the plasma generation chamber, and which introduces the plasma into the depressurization chamber while diffusing the plasma in the depressurization chamber, wherein a surface of the conductive thin film formed on the substrate is treated using different gas plasma by successively feeding different material gases to the plasma generation chamber.
  • FIG. 1 is a sectional side view of a substantial part of a plasma treatment system of the present invention.
  • FIG. 2 is a graph for comparing thicknesses of organic films between a conventional system and a system of the present invention.
  • FIG. 3 is a sectional side view for showing a shape of an opening end of a diffuser.
  • FIG. 4 is a enlarged sectional side view of a substantial part of a variation of the diffuser.
  • FIG. 5 is a sectional side view of a substantial part of an OLED display.
  • FIG. 6 is a perspective view of a substantial part of a structure of the OLED display during manufacture.
  • a reference numeral 34 denotes a plasma generation chamber for generating plasma by activating gas supplied thereto.
  • a plurality of gas cylinders 36 , 38 , 40 which is opened and closed by valves 36 a , 38 a , and 40 a are connected through a flow rate controller 42 to a gas inlet 34 a which is provided at a lower end of the chamber 34 .
  • a reference numeral 44 denotes an induction coil that is wound around the plasma generation chamber 34 .
  • the induction coil 44 is connected to a high frequency oscillator 48 through a matching circuit 46 .
  • a reference numeral 50 denotes a depressurization chamber. In the depressurization chamber 50 , a gate (not shown) is disposed at a peripheral surface thereof.
  • the plasma generation chamber 34 is connected to a bottom 50 a of the chamber 50 , and the plasma gas is supplied from a plasma inlet (plasma introductory part) 34 b .
  • a reference numeral 52 denotes a substrate (a member to be plasma-treated) whose surface is coated with resin and in which conductive thin film is provided on a substantial part of the resin coating. The surface of the conductive thin film is cleaned by contacting it with the plasma gas (a detailed explanation is herein omitted).
  • a reference numeral 54 denotes a substrate supporting means for supporting the substrate 52 with the conductive thin film formation surface down.
  • a moving mechanism 56 for moving the substrate 52 in a horizontal direction a swinging mechanism for swinging a main surface of the substrate 52 with respect to a horizontal plane, a rotation mechanism for rotating the substrate around a rotational axis perpendicular to the horizontal plane, and heating means for heating the substrate (not shown) or the like are provided when necessary.
  • a reference numeral 58 denotes a diffuser that is a characteristic of the present invention.
  • the diffuser 58 is provided at a joint part of the plasma generation chamber 34 and the depressurization chamber 50 and diffuses the plasma introduced in the depressurization chamber 50 over the whole surface of the substrate 52 .
  • two tubular bodies 60 a and 60 b inclined relative to the surface of the substrate 52 guide the plasma in an inclined direction.
  • One end side of the tubular body 60 a and one end side of the tubular body 60 b are in intimate contact with each other and are connected to the plasma inlet 34 b of the plasma generation chamber 34 , while the other end sides of the tubular bodies 60 a and 60 b are separated from each other.
  • Respective axes a and b shown by a dashed line in the drawing are extended to the ends of the substrate 52 so that extensions of the axes a and b intersect with the ends of the substrate 52 .
  • Respective axes a and b are inclined at 45 degrees relative to the horizontal plane, and opening ends c and d of the tubular bodies 60 a and 60 b substantially perpendicularly intersect these axes a and b.
  • the substrate 52 and the opening ends c and d are not arranged parallel to each other.
  • the illustrated tubular bodies 60 a and 60 b are circular in cross section.
  • a reference numeral 62 denotes a pressure controller for controlling a pressure within the depressurization chamber 50
  • a reference numeral 64 denotes a turbo-molecular pump that is connected to the pressure controller 62
  • a reference numeral 66 denotes a dry pump.
  • the pressure controller 62 and the turbo-molecular pump 64 are connected to the dry pump 66 through a valve 68 and a valve 70 , respectively, so as to depressurize the depressurization chamber 50 .
  • a substrate (a member to be plasma-treated) 52 is prepared.
  • a conductive pattern formed on an insulating substrate is covered with a coating resin and a portion of the conductive pattern is exposed through a window formed in a substantial part of this coating resin so as to form a conductive thin film (anode electrode).
  • the surface of the conductive thin film is cleaned and then oxidized, and then a coating made of organic material is formed on the conductive thin film.
  • This substrate 52 is placed in the depressurization chamber 50 and then the chamber 50 is hermetically sealed.
  • the substrate 52 placed in the depressurization chamber 50 is set at an earth potential or a proper bias potential.
  • valve 68 is opened to operate the dry pump 66 and to depressurize the depressurization chamber 50 .
  • the valve 70 is opened to operate the turbo-molecular pump 64 , and the valve 68 is closed to depressurize the depressurization chamber 50 sufficiently.
  • the gas cylinders 36 to 40 are opened or closed selectively by controlling the opening and closing of the valves 36 a to 40 a , predetermined gas is fed into the plasma generating chamber 34 , and the pressure in the depressurization chamber 50 is maintained at a predetermined value by the flow rate controller 42 . Under such condition, when a high frequency current flows through the induction coil 44 and an induction magnet field is generated in the plasma generation chamber 34 , the material gas is oscillated at a high frequency and thus plasma is generated.
  • O 2 plasma is fed into the depressurization chamber 50 through the diffuser 58 .
  • This oxygen decomposes and removes contamination adhering to the surface of the electrode formed on the surface of the substrate 52 , and further, it oxidizes the cleaned surface of the electrode.
  • C x H y F z (x>1, y ⁇ 0, z ⁇ 2) is used as the gas to be used as a material for forming an organic film
  • a functional organic film that is mainly composed of CF x can be formed on the substrate 52 having the conductive thin film.
  • the gas to be used as a material for forming an organic film is supplied to the plasma generation chamber 34 .
  • plasma gas is fed into the depressurization chamber 50 through the diffuser 58 .
  • the functional organic film is formed on the surface of the substrate 52 having the conductive thin film on which an organic layer is formed.
  • the current flow to the induction coil 44 is stopped, and the supply of the gas to be used as a material for forming an organic film is stopped.
  • a nitrogen gas is supplied into the depressurization chamber 50 to bring back the depressurization chamber 50 to the atmosphere pressure
  • the substrate 52 is taken out from the depressurized chamber 50 .
  • the depressurization chamber 50 is hermetically sealed and sufficiently depressurized, and the gas made by mixing the oxygen gas as a main gas with an argon gas or the like is fed to the plasma generation chamber 34 .
  • the depressurization chamber 50 is maintained at a constant pressure, a current is passed through the induction coil 44 so as to generate plasma, and the generated plasma is supplied to the depressurization chamber 50 through the diffuser 58 .
  • organic films deposited on an inner wall of the plasma generation chamber 34 , inner walls of the tubular bodies 60 a and 60 b of the diffuser 58 , and an inner wall of the depressurization chamber 50 are decomposed by O 2 -plasma gas, and this decomposition gas is discharged from the depressurization chamber 50 to the outside.
  • the current flow to the induction coil 44 is stopped, the supply of the oxygen gas or the like is stopped, the depressurization chamber 50 is brought back to the atmosphere pressure by supplying nitrogen gas thereto, and the depressurization chamber 50 is opened. After that, a new substrate 52 is put into the depressurization chamber 50 and is subjected to the above-described operations.
  • the cleaning of the substrate 52 in the depressurization chamber 50 by O 2 -plasma and the depositing of the organic film on the substrate 52 can be successively conducted.
  • the organic film adhering to the inner wall or the like of the diffuser during the depositing process can be decompounded by O 2 -plasma and removed from the depressurization chamber 50 prior to cleaning a new substrate. Therefore, the operations can be repeated without posing any problem to the cleaning operation of the new substrate.
  • the diffuser 58 is composed of the tubular bodies 60 a and 60 b .
  • the axes of the respective tubular bodies 60 a and 60 b are inclined relative to the axis of the plasma generation chamber 34 .
  • the cross sectional areas of the openings of the respective tubular bodies 60 a and 60 b are smaller than the cross sectional area of the plasma inlet 34 b.
  • Gas is supplied into the plasma generation chamber 34 and the depressurization chamber 50 is depressurized by the pumps 64 and 66 . For this reason, there is a pressure gradient in a gas flow path between the diffuser 58 , the depressurization chamber 50 , and the pump 66 . Therefore, the gas supplied to the plasma generation chamber 34 is drawn into the depressurization chamber 50 from the opening end of the diffuser 58 and then diffused in the depressurization chamber 50 .
  • the gas in the depressurization chamber behaves as an elastic body. Since molecules of the gas repeatedly collide against each other or against the wall of the chamber, their moving direction is changed. Accordingly, the gas in the tubular diffuser 58 flows in a direction synthesized from the moving direction controlled by the pressure gradient and the moving direction changed by the collision.
  • the plasma gas generated in the plasma generation chamber 34 enters into the tubular bodies 60 a and 60 b from various directions relative to their axes. Then, the plasma gas is guided through the tubular bodies 60 a and 60 b towards the depressurization chamber 50 while reflecting and swirling inside the tubular bodies 60 a and 60 b , and then it is discharged from the tubular bodies 60 a and 60 b into the depressurization chamber 50 .
  • the plasma gas enters into the tubular bodies 60 a and 60 b from various directions and reflects on the inner walls of the respective tubular bodies 60 a and 60 b in various directions. Therefore, the gas moves in various directions at the opening ends of respective tubular bodies 60 a and 60 b . However, the gas discharged from the opening ends is released from the guide of the tubular body 60 , so that the gas moves substantially straight ahead in the same direction as is discharged.
  • Some of the plasma gas discharged from the opening ends of the respective tubular bodies 60 a and 60 b may move in substantially parallel with the surface of the opening end of each tubular body.
  • a diameter and a length of the diffuser 58 are set in such a manner that the extensions of the respective axis of the respective tubular bodies 60 a and 60 b intersect with the ends of the substrate 52 and the extensions of the surfaces of the opening ends of the respective tubular bodies intersect the center part of the substrate 52 . It is preferable that the diameter and the length of the diffuser 58 are set in such a manner that the areas which are exposed to the plasma gas discharged from the respective tubular bodies 60 a and 60 b overlap at the center part. Thus, even if the axes of the tubular bodies 60 a and 60 b and the opening ends substantially perpendicularly intersect each other, the whole area of the substrate 52 can be exposed to the plasma gas.
  • two tubular bodies 60 a and 60 b of 50 mm in diameter are used, one end side of the tubular body 60 is in intimate contact with one end side of the tubular body 60 b , the respective axes of the tubular bodies 60 a and 60 b perpendicularly intersect each other, and axial lengths from this intersecting point to other end sides of the tubular bodies 60 a and 60 b are defined as 200 mm.
  • the plasma generation chamber 34 is 80 mm in outer diameter, a tubular body with a diameter of 150 mm and with a height of 40 mm is connected onto the plasma inlet 34 b within the depressurization chamber 50 , and each diffuser is connected to the upper end of the tubular body.
  • the substrate 52 is attached horizontally to the bottom surface of the depressurization chamber 50 in such a manner that the height of the substrate 52 is adjustable. For example, the substrate 52 having a size of 325 ⁇ 465 mm is placed at a height of 400 mm.
  • FIG. 2 shows a film thickness of the functional organic film (in a range from the center toward the edges of the substrate 52 ) that is formed on the substrate 52 under the above-described conditions.
  • the thickness of the film that is formed by using the disc diffuser (which is a diffuser for comparison with the diffuser to be used in the present invention) is changed from 1,330 nm to 780 nm from the center toward the respective edges of the substrate.
  • the difference in thickness between the center and the respective edges is 550 nm.
  • the distance from the center toward the respective edges of the substrate is 215 mm.
  • the film is the thickest at its center and gradually becomes thinner toward the edges.
  • the thickness of the film is dramatically decreased at a position about 170 nm or more apart from the center.
  • the thickness uniformity of the film over the entire substrate is about 45% and thus the thickness of the film varies widely.
  • the thickness of the film is kept between 680 nm ⁇ 10 from the center part toward the edges of the substrate.
  • the thickness of the film is decreased from 670 nm to 550 nm in a range of 30 mm around the peripheral surface of the substrate.
  • the difference in thickness is 130 nm.
  • the thickness uniformity of the film over the entire substrate is bout 4.6%, and therefore, variations in thickness can be minimized.
  • the plasma gas can be substantially uniformly applied to a large substrate from its center to its edges. Therefore, it is possible to form an organic film of substantially uniform thickness from its center toward its edges.
  • the conductive thin films which function as the electrodes on the substrate are formed on portions of the coating resin and therefore O 2 -plasma gas for cleaning the electrodes is exposed not only to the surfaces of the electrodes but also to the surface of the coating resin, the plasma gas generated in the plasma generation chamber 34 passes through the diffuser 58 and is diffused in the depressurization chamber 50 . In this way, the surfaces of the electrodes can be cleaned without damaging the coating resin. Moreover, since the smoothness of the coating resin is maintained, a display unit having no dark spots, an excellent display quality, and a high reliability can be realized.
  • the apparatus of the present invention even if the substrate 52 is upsized so as to use it for a large display unit or the like, the entire surface of the substrate can be uniformly treated, and there is no difference in display quality between the center and the edges of the substrate. Therefore, the present invention can minimize variations in quality and can realize a serious cost reduction.
  • the angles of inclination of the tubular bodies 60 a and 60 b are set at 45 degrees.
  • the height of the substrate 52 is kept constant and the angles of the inclination of the tubular bodies are set at 45 degrees or less, a larger substrate can be treated as the inclination angles are smaller.
  • the center part of the substrate is likely to be insufficiently cleaned and the film cannot be formed sufficiently.
  • the substrate may not be treated uniformly.
  • the angles of inclination of the tubular bodies are set at 45 degrees or more, a larger substrate cannot be treated as the inclination angles are larger.
  • the angles of the inclination of the tubular bodies 60 a and 60 b are set at 20 to 70 degrees.
  • the diameter and the length of each tubular body may be set in accordance with the inclination angle.
  • an angle between the axis and the opening end of each tubular body is set at 90 degrees (or 45 degrees relative to the substrate 52 ) when the inclination angle of each tubular body is 45 degrees.
  • this angle may also vary in accordance with the inclination angle of each tubular body.
  • an opposite area from the tubular body 60 a is an area 52 b and a surface which intersects the area 52 b is a virtual surface P.
  • a surface of the tubular body 60 a which is intersected by the virtual surface P can be defined as the opening end of the tubular body 60 a .
  • the opening end of the tubular body 60 a When the inclination angle of the tubular body 60 a is 45 degrees, the opening end of the tubular body is inclined at about 45 degrees relative to the substrate 52 . However, when the inclination angle of the tubular body 60 a is less than 45 degrees, the opening end of the tubular body 60 a is inclined at less than 45 degrees to the substrate 52 . Thus, as the inclination angle is smaller, the opening end becomes closer to horizontal to the substrate 52 . When the inclination angle of the tubular body 60 a is more than 45 degrees, the opening end of the tubular body 60 a is inclined at more than 45 degrees to the substrate 52 . Therefore, as the inclination angle is larger, the opening end becomes closer to vertical to the substrate.
  • the opening end of the tubular body 60 a may be formed not only in a manner that the entire surface of the opening end contacts the virtual surface P but also in a manner that a portion of the opening end contacts the virtual surface P.
  • tubular bodies 60 a and 60 b whose both ends are the same in diameter are used as the diffuser 58 .
  • a tubular whose both ends are different in diameter can also be used as the tubular bodies 60 a and 60 b .
  • the plasma gas can be more complicatedly moved in the diffuser 58 , and therefore, preferable diffusion of the plasma gas can be obtained in the depressurization chamber 50 .
  • the opening end with a smaller diameter is located at the plasma inlet 34 b 's side and the opening end with a larger diameter is located at the depressurization chamber 50 's side, the adhesion of the organic film material to the inner walls of the tubular body 60 a and 60 b can be reduced.
  • two tubular bodies 60 a and 60 b are arranged in a substantial V shape or a substantial Y shape.
  • the number of the tubular body may be two or more.
  • two conical plates 72 and 74 may be arranged parallel to each other. In this case, a space between the conical plates 72 and 74 are used as a path of plasma gas. A vertex of the conical plate 72 is cut off so as to connect the plate 72 to the plasma inlet 34 b .
  • the distance between the conical plates 72 and 74 is kept constant by a support post 76 . By using a thin rod as the support post 76 , the plasma gas can be fed to the depressurization chamber 50 in all directions.
  • the tubular bodies 60 a and 60 b may be not only a cylindrical body but also a polygonal tubular body.
  • the cleaning of the member to be plasma-treated and the forming of the organic film are successively carried out by changing material gas for plasma.
  • the apparatus of the present invention can also be applied to only one of the operations: cleaning of the member to be plasma-treated or forming of the organic film.
  • the member to be plasma-treated is not limited to an in-process substrate to be used for an OLED display, but it can be a any member which requires the cleaning operation or the organic film forming operation.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
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  • Analytical Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
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  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
US10/926,262 2003-08-27 2004-08-25 Plasma treatment apparatus and surface treatment apparatus of substrate Abandoned US20050045275A1 (en)

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JP2003302815A JP2005072446A (ja) 2003-08-27 2003-08-27 プラズマ処理装置及び基板の表面処理装置
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090314309A1 (en) * 2008-06-19 2009-12-24 Applied Materials, Inc. Method and system for supplying a cleaning gas into a process chamber

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100724571B1 (ko) 2006-02-13 2007-06-04 삼성전자주식회사 인시투 클리닝 기능을 갖는 플라즈마 처리장치 및 그사용방법
JP4884320B2 (ja) * 2007-06-29 2012-02-29 京セラ株式会社 画像表示装置
CN112349854A (zh) * 2019-12-25 2021-02-09 广东聚华印刷显示技术有限公司 显示器件及其制备方法和显示面板
CN120001727B (zh) * 2025-01-17 2025-07-22 国测量子科技(浙江)有限公司 一种等离子体发生容器的清洗系统和清洗方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010010257A1 (en) * 1998-12-30 2001-08-02 Tuqiang Ni Gas injection system for plasma processing
US6299692B1 (en) * 2000-07-21 2001-10-09 Applied Materials, Inc. Head for vaporizing and flowing various precursor materials onto semiconductor wafers during chemical vapor deposition
US20020029747A1 (en) * 1999-09-30 2002-03-14 Novellus Systems, Inc. Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
US20030092264A1 (en) * 2001-10-03 2003-05-15 Shinji Kajita Substrate processing apparatus and method
US6706334B1 (en) * 1997-06-04 2004-03-16 Tokyo Electron Limited Processing method and apparatus for removing oxide film
US20080069966A1 (en) * 1999-12-10 2008-03-20 Tokyo Electron Limited Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3310171B2 (ja) * 1996-07-17 2002-07-29 松下電器産業株式会社 プラズマ処理装置
DE10115241A1 (de) * 2001-03-28 2002-10-24 Aurion Anlagentechnik Gmbh Vorrichtung und Verfahren zur atmosphärischen Plasmabehandlung
KR100446619B1 (ko) * 2001-12-14 2004-09-04 삼성전자주식회사 유도 결합 플라즈마 장치

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6706334B1 (en) * 1997-06-04 2004-03-16 Tokyo Electron Limited Processing method and apparatus for removing oxide film
US20010010257A1 (en) * 1998-12-30 2001-08-02 Tuqiang Ni Gas injection system for plasma processing
US20020029747A1 (en) * 1999-09-30 2002-03-14 Novellus Systems, Inc. Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor
US20080069966A1 (en) * 1999-12-10 2008-03-20 Tokyo Electron Limited Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
US6299692B1 (en) * 2000-07-21 2001-10-09 Applied Materials, Inc. Head for vaporizing and flowing various precursor materials onto semiconductor wafers during chemical vapor deposition
US20030092264A1 (en) * 2001-10-03 2003-05-15 Shinji Kajita Substrate processing apparatus and method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090314309A1 (en) * 2008-06-19 2009-12-24 Applied Materials, Inc. Method and system for supplying a cleaning gas into a process chamber
US20100012273A1 (en) * 2008-06-19 2010-01-21 Applied Materials, Inc. Method and System for Supplying a Cleaning Gas Into a Process Chamber
US7699935B2 (en) * 2008-06-19 2010-04-20 Applied Materials, Inc. Method and system for supplying a cleaning gas into a process chamber
US8591699B2 (en) 2008-06-19 2013-11-26 Applied Materials, Inc. Method and system for supplying a cleaning gas into a process chamber
US9206511B2 (en) 2008-06-19 2015-12-08 Applied Materials, Inc. Method and system for supplying a cleaning gas into a process chamber
US10094486B2 (en) 2008-06-19 2018-10-09 Applied Materials, Inc. Method and system for supplying a cleaning gas into a process chamber

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CN1638598A (zh) 2005-07-13
JP2005072446A (ja) 2005-03-17

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