US20050040905A1 - Temperature-compensated crystal oscillator - Google Patents
Temperature-compensated crystal oscillator Download PDFInfo
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- US20050040905A1 US20050040905A1 US10/857,442 US85744204A US2005040905A1 US 20050040905 A1 US20050040905 A1 US 20050040905A1 US 85744204 A US85744204 A US 85744204A US 2005040905 A1 US2005040905 A1 US 2005040905A1
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- crystal oscillator
- temperature
- mounting base
- electrode pads
- electrode pad
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L1/00—Stabilisation of generator output against variations of physical values, e.g. power supply
- H03L1/02—Stabilisation of generator output against variations of physical values, e.g. power supply against variations of temperature only
- H03L1/04—Constructional details for maintaining temperature constant
Definitions
- the present invention relates to a temperature-compensated crystal oscillator for use in an electronic device such as a mobile communication device.
- temperature-compensated crystal oscillators are employed in electronic devices such as mobile communication devices.
- a conventionally known temperature-compensated crystal oscillator has a construction such that a container 23 is bonded onto an upper surface of a planar substrate 21 having a plurality of external terminals 22 provided on a lower surface thereof as shown in FIGS. 21 ( a ) and 21 ( b ).
- a crystal oscillator element 24 is accommodated in the container 23 .
- An IC element 26 which controls an oscillation output on the basis of the oscillation of the crystal oscillator element 24 is provided in a cavity 25 defined by a lower surface of the container 23 and an interior surface of a frame base 27 attached to the lower surface of the container 23 .
- the container 23 is adapted to hermetically seal the crystal oscillator element 24 accommodated therein without communication with the atmosphere.
- the container 23 includes a base plate composed of an electrically insulative material and a seal ring 31 attached to an upper surface of the base plate.
- the crystal oscillator element 24 is attached to the upper surface of the base plate in the seal ring 31 .
- a metal lid 32 is welded to an upper surface of the seal ring 31 by seam welding (resistance welding), where by the space in which the crystal oscillator element 24 is accommodated is hermetically sealed.
- the base plate of the container 23 and the frame base 21 are integrally formed of a ceramic material such as glass-ceramic.
- Interconnection conductors are provided in and on the base plate and the frame base.
- a conventionally known ceramic green sheet laminating method is employed for the formation of the base plate and the frame base.
- An IC element 26 mounting area on the planar substrate 21 is illustrated as having a rectangular shape by a solid line in FIG. 22 .
- a plurality of electrode pads 28 respectively connected to electrodes of the IC element 26 are arranged in two rows as stated, for example, in Japanese Unexamined Patent Publication No. 2001-291742. Five electrode pads are arranged in one of the two rows, and six electrode pads are arranged in the other row.
- a flip chip IC element 26 having a plurality of connection pads is employed as the IC element 26 .
- the connection pads of the IC element 26 are first brought into contact with the corresponding electrode pads 28 in the IC element 26 mounting area with the intervention of electrically conductive bonding members such as of a solder, and then the electrically conductive bonding members of the solder are heat-melted at a high temperature for the mounting of the IC element 26 on the mounting base 23 .
- the plan area of the aforesaid temperature-compensated crystal oscillator is reduced to 7 mm ⁇ 5 mm, to 5 mm ⁇ 3 mm, and further to 3 mm ⁇ 2 mm.
- the size reduction of the oscillator there is an increasing demand for the size reduction of the IC element 26 .
- the pitch of the electrode pads 28 should be reduced with the need for the reduction of the IC element 26 mounting area. This reduces the bonding reliability, leading to limited flexibility in routing interconnection conductors 29 connected to the electrode pads 28 .
- the specific temperature characteristic of the crystal oscillator element 24 should preliminarily be measured before the mounting of the IC element 26 .
- the size reduction of the electrode pads makes it difficult to measure the specific temperature characteristic, drastically reducing the productivity.
- An advantage of the present invention is to provide a temperature-compensated crystal oscillator which totally has a reduced size and yet maintains and improves the bonding reliability of an IC element.
- a temperature-compensated crystal oscillator comprises: a container accommodating therein a crystal oscillator element; a mounting base bonded to a lower surface of the container and having surface mounting external terminals provided on a lower surface (mounting surface) thereof; and an IC element mounted on the mounting base for controlling an oscillation output on the basis of temperature compensation data for compensating for a temperature characteristic of the crystal oscillator element; wherein a plurality of electrode pads including plural crystal electrode pads connected to the crystal oscillator element, an oscillation output electrode pad, a ground electrode pad, a power source voltage electrode pad, and plural writing control electrode pads connected to the surface mounting external terminals are arranged in a matrix configuration of m rows ⁇ n columns (wherein m and n are natural numbers not smaller than 2) in an IC element mounting area on the mounting base; wherein the IC element has a plurality of connection pads provided on a main surface thereof and electrically connected to the corresponding electrode pads.
- surface mounting herein means that a surface of an electronic component such as a crystal oscill
- At least one of the electrode pads arranged in the IC element mounting area on the mounting base is a dummy electrode pad bonded to a corresponding one of the connection pads of the IC element.
- the electrode pads are arranged at a predetermined pitch linearly in the rows and in the columns, and the respective rows extend perpendicularly to the respective columns.
- the mounting base comprises at least two laminated insulative layers and an interconnection conductor provided between the two insulative layers and connected to a via-hole conductor disposed just below or above the electrode pads.
- the natural numbers m and n are not smaller than 3, and the electrode pad connected to the interconnection conductor via the via-hole conductor is surrounded by the other electrode pads.
- the IC element comprises a semiconductor device and a re-interconnection layer provided on a main surface of the semiconductor device for associating the connection pads of the IC element with electrode pad positions.
- the mounting base has a planar shape, and a spacer having a thickness greater than a height of the IC element is provided on the lower surface of the container.
- the mounting base has a cavity formed in an upper surface thereof and accommodating therein the IC element, and an upper surface portion of the mounting base around an opening of the cavity is bonded to the lower surface of the container.
- the mounting base has a cavity accommodating therein the IC element, and is bonded to the lower surface of the container with a surface portion thereof around an opening of the cavity facing downward.
- a temperature-compensated crystal oscillator comprises: a mounting base having a cavity which opens to an upper surface of the mounting base; a crystal oscillator element provided in the cavity; and an IC element provided in the cavity for controlling a predetermined oscillation output on the basis of temperature compensation data for compensating for a temperature characteristic of the crystal oscillator element; wherein the mounting base has a lower surface serving as a mounting surface; wherein a plurality of electrode pads including a pair of crystal electrode pads connected to the crystal oscillator element, an oscillation output electrode pad, a ground electrode pad, a power source voltage electrode pad and a writing electrode pad for writing the temperature compensation data are arranged in a matrix configuration of m rows ⁇ n columns (wherein m and n are natural numbers not smaller than 2) in an IC element mounting area on a bottom surface of the cavity; wherein the IC element has a plurality of connection pads provided on a lower surface thereof and electrically connected to the corresponding electrode pads.
- At least one of the electrode pads arranged in the IC element mounting area on the bottom surface of the cavity is a dummy electrode pad bonded to a corresponding one of the connection pads of the IC element.
- the electrode pads are arranged at a predetermined pitch linearly in the rows and in the columns, and the respective rows extend perpendicularly to the respective columns.
- the mounting base comprises at least two laminated insulative layers and an interconnection conductor provided between the two insulative layers and connected to a via-hole conductor disposed just below or above a predetermined one of the electrode pads.
- the natural numbers m and n are not smaller than 3, and the electrode pad connected to the interconnection conductor via the via-hole conductor is surrounded by the other electrode pads.
- the IC element comprises a semiconductor device and a re-interconnection layer provided on a main surface of the semiconductor device for associating the connection pads of the IC element with electrode pad positions.
- At least the plural crystal electrode pads (e.g., two crystal electrode pads) connected to the crystal oscillator element, the at least two writing control electrode pads, and the oscillation output electrode pad, the ground electrode pad, the power source voltage electrode pad and an oscillation control electrode pad respectively connected to the surface mounting external terminals are provided below the lower surface of the container. That is, at least eight electrode pads are provided.
- these electrode pads are arranged in the matrix configuration of m rows ⁇ n columns (wherein m and n are natural numbers not smaller than 2).
- the connection pads of the IC element are electrically connected to the corresponding electrode pads. Therefore, the electrode pads are evenly arranged in a not smaller than 3 ⁇ 3 matrix configuration (e.g., in a 3 ⁇ 4 matrix configuration).
- the electrode pads are provided in the generally entire IC element mounting area. Even if the size of the IC element is reduced, the occupation ratio of the electrode pads in the IC element mounting area can be increased, and a dead space in the container and a dead space in the IC element mounting area can be eliminated. This significantly contributes to the size reduction of the entire temperature-compensated crystal oscillator.
- the IC element is bonded to the electrode pads via electrically conductive bonding members, junctures of the electrode pads are distributed over the generally entire lower surface of the IC element. Therefore, the IC element can stably be bonded to the electrode pads.
- the IC element adapted for the electrode pads is constructed such that the laminate interconnection substrate (re-interconnection layer) is integrally provided on the mounting surface of the semiconductor device and protected by a resin such as an epoxy resin.
- the connection pads are provided on the mounting surface of the laminate interconnection substrate in association with the electrode pads.
- the IC element having such a construction can very easily be mounted on the aforesaid electrode pads and electrically connected to the electrode pads.
- At least one of the electrode pads arranged in the m ⁇ n matrix configuration (wherein m and n are natural numbers not smaller than 2) in the IC element mounting area in the container is the dummy electrode pad connected to the corresponding connection pad of the IC element.
- the electrode pads can be arranged in a 3 ⁇ 3 square matrix configuration by providing one dummy electrode pad.
- the electrode pads are arranged at the predetermined pitch linearly in the rows and in the columns, and the respective rows extend perpendicularly to the respective columns.
- the junctions of the IC element are evenly located, so that the bonding reliability of the IC element is improved.
- the re-interconnection layer of the IC element can very easily be designed.
- the mounting base has a structure such that the at least two insulative layers are laminated and the interconnection conductor connected to the via-hole conductor disposed just below or above the predetermined electrode pad is provided between the two insulative layers. That is, there is no need for routing an interconnection conductor from the electrode pad on the surface of the mounting base, making it possible to prevent a short circuit which may otherwise occur due to a foreign matter adhering on the exposed interconnection conductor. Further, an electrically conductive bonding member can be prevented from flowing out of an electrode pad region. Thus, the IC element can be bonded to the mounting base with a higher reliability.
- the natural numbers m and n are not smaller than 3, and the electrode pad connected to the interconnection conductor via the via-hole conductor is surrounded by the other electrode pads.
- the electrode pad surrounded by the other electrode pads herein includes three or four adjacent electrode pads arranged in a row or in a column.
- the mounting base has a planar shape, and the spacer having a thickness greater than the height of the IC element is provided on the lower surface of the container.
- the cavity accommodating therein the IC element is provided in the upper surface of the mounting base, and the upper surface portion of the mounting base around the opening of the cavity is bonded to the lower surface of the container.
- the mounting base has the cavity accommodating therein the IC element, and is bonded to the lower surface of the container with the surface portion thereof around the opening of the cavity facing downward.
- the cavity opens to the upper surface of the mounting base, and the crystal oscillator element and the IC element for controlling the predetermined oscillation output on the basis of the temperature compensation data for compensating for the temperature characteristic of the crystal oscillator element are accommodated in the cavity.
- the lower surface of the mounting base serves as the mounting surface.
- At least eight electrode pads are provided in the IC element mounting area on the bottom surface of the cavity.
- the electrode pads are arranged in the matrix configuration of m rows ⁇ n columns (wherein m and n are natural numbers not smaller than 2).
- the connection pads of the IC element are electrically connected to the corresponding electrode pads.
- the electrode pads are arranged in a not smaller than 3 ⁇ 3 matrix configuration (e.g., in a 3 ⁇ 4 matrix configuration).
- the electrode pads are provided in the generally entire IC element mounting area. Even if the size of the IC element is reduced, the occupation ratio of the electrode pads in the IC element mounting area can be increased, and a dead space in the container and a dead space in the IC element mounting area can be eliminated. This significantly contributes to the size reduction of the temperature-compensated crystal oscillator.
- the junctures are distributed over the generally entire lower surface of the IC element. Therefore, the IC element can stably be bonded to the electrode pads.
- the IC element adapted for the electrode pads is constructed such that the laminate interconnection substrate (re-interconnection layer) is provided on the mounting surface of the semiconductor device and protected by a resin such as an epoxy resin.
- the connection pads are provided on the mounting surface of the laminate interconnection substrate in association with the electrode pads.
- the IC element having such a construction can very easily be mounted on the aforesaid electrode pads and electrically connected to the electrode pads.
- the electrode pads arranged in the m ⁇ n matrix configuration (wherein m and n are natural numbers not smaller than 2) in the IC element mounting area on the bottom surface of the cavity of the mounting base include the dummy electrode pad connected to the IC element.
- the electrode pads can be arrange in a 3 ⁇ 3 square matrix configuration by providing one dummy electrode pad.
- the electrode pads are arranged at a predetermined pitch linearly in the rows and in the columns, and the respective rows extend perpendicularly to the respective columns.
- the junctures of the IC element are evenly located, so that the bonding reliability of the IC element is improved.
- the re-interconnection layer of the IC element can very easily be designed.
- the mounting base has a structure such that the at least two insulative layers are laminated and the interconnection conductor connected to the via-hole conductor disposed just below or above the predetermined electrode pad is provided between the two insulative layers. That is, there is no need for routing an interconnection conductor from the electrode pad on the surface of the mounting base, making it possible to prevent a short circuit which may otherwise occur due to a foreign matter adhering on the exposed interconnection conductor. Further, an electrically conductive bonding member can be prevented from flowing out of the electrode pad region. Thus, the IC element can be bonded with a higher reliability.
- the natural numbers m and n are not smaller than 3, and the electrode pad connected to the interconnection conductor via the via-hole conductor is surrounded by the other electrode pads.
- the electrode pad surrounded by the other electrode pads herein includes three or four adjacent electrode pads arranged in a row or in a column.
- the bonding reliability of the IC element can be maintained and improved. This significantly contributes to the size reduction of the entire temperature-compensated crystal oscillator.
- FIG. 1 is a perspective view of a temperature-compensated crystal oscillator according to one embodiment of the present invention
- FIG. 2 is a sectional view of the temperature-compensated crystal oscillator of FIG. 1 ;
- FIG. 3 ( a ) is a plan view of a mounting base of the temperature-compensated crystal oscillator of FIG. 1 as seen from an upper side thereof, and FIGS. 3 ( b ) and 3 ( c ) are plan views illustrating other conceivable arrangements of electrode pads provided in an IC element mounting area of the mounting base;
- FIG. 4 is a plan view illustrating interconnection conductors and via-hole conductors provided in a laminate substrate of the mounting base;
- FIG. 5 is a plan view illustrating the mounting base of the temperature-compensated crystal oscillator of FIG. 1 as seen through from a lower side thereof;
- FIGS. 6 ( a ) and 6 ( b ) are a sectional view of an IC element of the temperature-compensated crystal oscillator of FIG. 1 and a plan view of the IC element as seen from the lower side thereof, respectively;
- FIG. 7 is an exploded sectional view of a temperature-compensated crystal oscillator according to another embodiment of the present invention, particularly illustrating connection of a crystal electrode pad;
- FIG. 8 is an exploded sectional view of a temperature-compensated crystal oscillator according to another embodiment of the present invention, particularly illustrating connection of an electrode pad to an external terminal;
- FIG. 9 is an exploded sectional view of a temperature-compensated crystal oscillator according to another embodiment of the present invention, particularly illustrating extraction of a writing control electrode pad;
- FIGS. 10 ( a ) and 10 ( b ) are a perspective view and a sectional view, respectively, illustrating a temperature-compensated crystal oscillator according to another embodiment of the present invention
- FIGS. 11 ( a ) and 11 ( b ) are a perspective view and a sectional view, respectively, illustrating a temperature-compensated crystal oscillator according to further another embodiment of the present invention.
- FIG. 12 is a perspective view illustrating a temperature-compensated crystal oscillator according to still another embodiment of the present invention.
- FIG. 13 is a sectional view of the temperature-compensated crystal oscillator of FIG. 12 ;
- FIG. 14 ( a ) is a plan view of a mounting base of the temperature-compensated crystal oscillator of FIG. 12 as seen from an upper side thereof, and FIGS. 14 ( b ) and 14 ( c ) are plan views illustrating other conceivable arrangements of electrode pads provided in an IC element mounting area of the mounting base;
- FIG. 15 is a plan view illustrating interconnection conductors and via-hole conductors provided in the mounting base of the temperature-compensated crystal oscillator of FIG. 12 ;
- FIG. 16 is a plan view of the temperature-compensated crystal oscillator of FIG. 12 as seen from a lower side thereof;
- FIGS. 17 ( a ) and 17 ( b ) are a sectional view of an IC element of the temperature-compensated crystal oscillator of FIG. 12 , and a plan view of the IC element as seen from the lower side thereof, respectively;
- FIG. 18 is a sectional view of a temperature-compensated crystal oscillator according to another embodiment of the present invention, particularly illustrating connection of a crystal electrode pad;
- FIG. 19 is a sectional view of a temperature-compensated crystal oscillator according to another embodiment of the present invention.
- FIG. 20 is a sectional view of a temperature-compensated crystal oscillator according to another embodiment of the present invention.
- FIGS. 21 ( a ) and 21 ( b ) are a sectional view of a conventional temperature-compensated crystal oscillator, and a plan view of the temperature-compensated crystal oscillator as seen from a lower side thereof, respectively;
- FIG. 22 is a plan view illustrating an IC element mounting area of the conventional temperature-compensated crystal oscillator.
- FIG. 1 is a perspective view of a temperature-compensated crystal oscillator according to one embodiment of the present invention
- FIG. 2 is a sectional view of the temperature-compensated crystal oscillator of FIG. 1 .
- the temperature-compensated crystal oscillator shown in these figures has a construction such that a planar mounting base 6 provided with an IC element 7 is bonded to a lower surface of a container 1 in which a crystal oscillator element 5 is accommodated.
- the container 1 includes a laminate substrate 2 composed of a ceramic material such as glass-ceramic or alumina ceramic, a seal ring 3 composed of a metal such as a 42-alloy, cobal or phosphor bronze, and a lid 4 composed of the same metal as the seal ring 3 .
- the seal ring 3 is attached to an upper surface of the laminate substrate 2 , and the lid 4 is placed and fixed onto an upper surface of the seal ring 3 .
- the crystal oscillator element 5 is mounted on the upper surface of the laminate substrate 2 inside the seal ring 3 .
- the container 1 has a space defined by the upper surface of the laminate substrate 2 , an interior surface of the seal ring 3 and a lower surface of the lid 4 , and the crystal oscillator element 5 is accommodated in this space and hermetically sealed.
- a pair of mounting pads 8 a , 8 b (a mounting pad 8 b is not shown in FIG. 2 ) connected to oscillation electrodes of the crystal oscillator element 5 are provided on the upper surface of the laminate substrate 2 .
- the laminate substrate 2 has legs 2 c , 2 d provided on a lower surface thereof.
- the legs 2 c , 2 d are composed of the same material as the laminate substrate 2 .
- a plurality of container connection electrodes 13 are provided on lower surfaces of the legs 2 c , 2 d.
- the laminate substrate 2 including the legs 2 c , 2 d has first via-hole conductors 9 a , fifth via-hole conductors 9 f and interconnection conductors 9 b provided therein.
- the laminate substrate 2 of the container 1 is composed of a ceramic material such as glass-ceramic
- the laminate substrate 2 is produced, for example, by applying an electrically conductive paste in a predetermined pattern by printing to form the mounting pads 8 a , 8 b and the interconnection conductors 9 b on surfaces of a ceramic green sheet prepared by mixing an organic solvent or the like with ceramic material powder, forming conductors as the first via-hole conductors 9 a and the fifth via-hole conductors 9 f in ceramic green sheets, stacking and pressing these ceramic green sheets, and sintering the resulting laminate at a high temperature.
- the seal ring 3 and the lid 4 of the container 1 are produced by forming a metal such as a 42-alloy into predetermined configurations by a conventionally known metal processing method.
- the container 1 is assembled by brazing the seal ring 3 to an electrically conductive layer preliminarily formed on the upper surface of the laminate substrate 2 , mounting and fixing the crystal oscillator element 5 to the upper surface of the laminate substrate 2 with the use of electrically conductive bonding members 16 , performing an initial frequency adjustment of the crystal oscillator element 5 , and bonding the aforesaid lid 4 to the upper surface of the seal ring 3 in a predetermined atmosphere by a conventionally known resistance welding method or the like.
- the seal ring 3 and the lid 4 are thus bonded by the resistance wielding, the seal ring 3 and the lid 4 are each preliminarily coated with an Ni layer, an Au layer or the like by plating.
- the crystal oscillator element 5 accommodated in the container 1 is produced by forming the pair of oscillation electrodes on opposite main surfaces of a crystal piece cut along a predetermined crystal axis, and is capable of oscillating at a predetermined frequency.
- the crystal oscillator element 5 is mounted on the upper surface of the laminate substrate 2 with the pair of oscillation electrodes thereof electrically connected to the mounting pads 8 a , 8 b (collectively denoted by a reference numeral 8 ) on the upper surface of the laminate substrate 2 via the electrically conductive bonding members 16 .
- the electrical connection and the mechanical connection between the crystal oscillator element 5 and the container 1 are simultaneously achieved.
- the container 1 has a shielding function with the lid 4 being grounded in use.
- the crystal oscillator element 5 and the IC element 7 can be protected from unwanted external electromagnetic noises.
- the mounting base 6 includes laminated substrates 6 a , 6 b of a ceramic material such as glass-ceramic or alumina ceramic, and has first via-hole conductors 9 a , fifth via-hole conductors 9 f and interconnection conductors 9 b , as well as fourth via-hole conductors 9 e , second via-hole conductors 9 c , third via-hole conductors 9 d and interconnection conductors 9 b provided therein.
- a ceramic material such as glass-ceramic or alumina ceramic
- the mounting base 6 is composed of a ceramic material such as glass-ceramic
- the mounting base 6 is produced, for example, by applying an electrically conductive paste in a predetermined pattern by printing to form the interconnection conductors 9 b on a surface of a ceramic green sheet prepared by mixing a proper organic solvent or the like with ceramic material powder, forming conductors as the fourth via-hole conductors 9 e , the second via-hole conductors 9 c and the third via-hole conductors 9 d in ceramic green sheets, stacking and pressing these ceramic green sheets, and sintering the resulting laminate at a high temperature.
- a plurality of electrode pads 10 connected to connection pads 11 of the IC element 7 provided between the legs 2 c , 2 d of the container 1 are provided on a center portion of an upper surface of the mounting base 6 . That is, the legs 2 c , 2 d function as spacers to provide a space between a bottom surface of a recess of the container 1 and the upper surface of the mounting base 6 for mounting the IC element 7 .
- connection pads 11 of the IC element 7 are respectively connected to the electrode pads 10 via solder bumps
- the connection pads 11 are preferably configured so as to cover the corresponding electrode pads 10 , i.e., so as to have slightly greater sizes than the corresponding electrode pads 10 .
- solder balls respectively formed on the connection pads 11 do not drop out of the connection pads 11 . Even if the IC element is slightly offset, a short circuit between the adjacent electrically conductive bonding members 17 can be prevented.
- the electrode pads 10 are herein arranged in a square matrix configuration as shown in FIG. 3 ( a ), the electrode pads 10 may be arranged as shown in FIG. 3 ( b ) or FIG. 3 ( c ). Where two or more electrode pads 10 are linearly arranged, the linear arrangement of the electrode pads 10 is regarded as a row or a column. Where the electrode pads 10 are arranged in the IC element mounting area as shown in FIG. 3 ( b ), for example, the electrode pads 10 are regarded to be arranged in a 3 ⁇ 2 matrix configuration. Where the electrode pads 10 are arranged as shown in FIG. 3 ( c ), the electrodes 10 are regarded to be arranged in a 3 ⁇ 4 matrix configuration.
- one dummy electrode pad is provided for arranging the electrode pads in a 3 ⁇ 3 matrix configuration.
- dummy electrode pads are additionally provided for arranging the electrode pads in a 3 ⁇ 4 matrix configuration, in a 4 ⁇ 4 matrix configuration or in a 4 ⁇ 5 matrix configuration.
- the interconnection conductors 9 b , the fourth via-hole conductors 9 e connected to the interconnection conductors 9 b and extending downward in the mounting base 6 , and the second via-hole conductors 9 c and the third via-hole conductors 9 d extending upward from the interconnection conductors 9 b are provided in the mounting base 6 .
- the formation of the interconnection conductors 9 b and the first to third via-hole conductors 9 a , 9 c , 9 d is achieved by a common mounting base production method.
- the interconnection conductors 9 b , the first via-hole conductors 9 a connected to the interconnection conductors 9 b and extending upward in the laminate substrate 2 and the fifth via-hole conductors 9 f extending downward from the interconnection conductors 9 b are provided in the laminate substrate 2 .
- the formation of the interconnection conductors 9 b and the forth and fifth via-hole conductors 9 e , 9 f is achieved by a common laminate substrate production method.
- the fourth via-hole conductors 9 e respectively connect external terminals 14 to predetermined ones of the interconnection conductors 9 b.
- the fifth via-hole conductors 9 f respectively connect the container connection electrodes 13 on the lower surface of the laminate substrate 2 to predetermined ones of the interconnection conductors 9 b.
- the first via-hole conductors 9 a respectively connect the mounting pads 8 connected to the crystal oscillator element 5 located on the upper surface of the laminate substrate 2 to predetermined ones of the interconnection conductors 9 b .
- an interconnection conductor 9 kept at a ground potential is connected to the seal ring 3 .
- the second via-hole conductors 9 c respectively connect the electrode pads 10 provided on the mounting base 6 to predetermined ones of the interconnection conductors 9 b.
- the third via-hole conductors 9 d respectively connect mounting base connection electrodes 12 provided on the upper surface of the mounting base 6 to predetermined ones of the interconnection conductors 9 b.
- the crystal electrode pads 10 d and 10 f are respectively connected to the mounting pads 8 of the crystal oscillator element 5 via the second via-hole conductor 9 c , the interconnection conductor 9 b , the third via-hole conductor 9 d , the mounting base connection electrode 12 , the container connection electrode 13 , the fifth via-hole conductor 9 f , the interconnection conductor 9 b and the first via-hole conductor 9 a , and to the mounting base connection electrode 12 via the second via-hole conductor 9 c , the interconnection conductor 9 b and the third via-hole conductor 9 d , for example, as shown in an exploded diagram of FIG. 7 .
- the oscillation output electrode pad 10 a is connected to the mounting base connection electrode 12 via the second via-hole conductor 9 c , the interconnection conductor 9 b and the third via-hole conductor 9 d as shown on a right-hand side of an exploded diagram of FIG. 8 .
- the ground electrode pad 10 h is connected to the mounting base connection electrodes 12 via the second via-hole conductor 9 c , the interconnection conductor 9 b and the third via-hole conductor 9 d as shown on a left-hand side of an exploded diagram of FIG. 8 .
- the mounting base connection electrode 12 is connected to the seal ring 3 via the container connection electrode 13 , the fifth via-hole conductor 9 f and the first via-hole conductor 9 a.
- the power source voltage electrode pad 10 c and the oscillation control electrode pad 10 i are respectively connected to the mounting base connection electrodes 12 via the second via-hole conductors 9 c , the interconnection conductors 9 b and the third via-hole conductors 9 d.
- the writing control electrode pads 10 b , 10 e , 10 g are respectively connected to the mounting base connection electrodes 12 via the second via-hole conductors 9 c , the interconnection conductors 9 b and the third via-hole conductors 9 d.
- the plurality of mounting base connection electrodes 12 electrically and/or mechanically connected to the corresponding container connection electrodes 13 on the lower surface of the container 1 are disposed on the upper surface of the mounting base 6 .
- Four external terminals 14 a to 14 d are respectively provided in four corners on the lower surface of the mounting base 6 .
- the external terminals 14 are electrically connected to the corresponding connection electrodes 12 via electrically conductive films or the like provided at the corners of the mounting base 6 . Where the external terminals 14 overlap thicknesswise with the corresponding connection electrodes 12 , the external terminals 14 may be connected to the corresponding connection electrodes 12 via via-hole conductors 9 .
- the container connection electrodes 13 on the lower surface of the container 1 are provided in one-to-one correspondence with the mounting base connection electrodes 12 on the upper surface of the mounting base 6 , and firmly connected to the mounting base connection electrodes 12 via electrically conductive bonding members 18 .
- five mounting base connection electrodes 12 are provided on each side on the upper surface of the mounting base 6 . Out of the ten mounting base connection electrodes 12 in total, only the mounting base connection electrodes 12 connected to the crystal electrode pads 10 d , 10 f and the writing control electrode pads 10 b , 10 e , 10 g are extracted through corresponding ones of the ten container connection electrodes 13 on the container 1 .
- the mounting base connection electrodes 12 connected to the ground electrode pad 10 h , the power source voltage electrode pad 10 c , the oscillation control electrode pad 10 i and the oscillation output electrode pad 10 a are not extracted through the container connection electrodes 13 .
- the ground electrode pad 10 h , the power source voltage electrode pad 10 c , the oscillation control electrode pad 10 i and the oscillation output electrode 10 a are electrically connected to the corresponding external terminals 14 via none of the mounting base connection electrodes 12 , but via the second via-hole conductors 9 c , the interconnection conductors 9 b and the fourth via-hole conductors 9 e.
- the container connection electrodes 13 connected to the crystal electrode pads are used as measurement pads for measuring the oscillation characteristic of the crystal oscillator element 5 in a hermetically sealed state.
- the crystal electrode pads 10 d , 10 f may be formed as having a greater size, and employed as the measurement pads for the measurement of the oscillation characteristic before the mounting of the IC element 7 .
- the container connection electrodes 13 respectively connected to the writing control electrode pads are connected to writing terminals provided on a lateral side of the oscillator for writing temperature compensation data to a temperature compensation circuit.
- the container connection electrodes 13 are partly exposed in recesses 1 a defined in the vicinity of junctures between the legs 2 c , 2 d of the container 1 and the mounting base 6 as shown in FIG. 9 .
- the temperature compensation data according to the temperature characteristic of the crystal oscillator element 5 can be written in a memory provided in the temperature compensation circuit of the IC element 7 by bringing a probe needle of a data writing device into contact with the writing terminals.
- Connection paths from the container-connection electrodes 13 or the mounting base connection electrodes 12 to the writing control electrode pads are each established through the third via-hole conductor 9 d , the interconnection conductor 9 b and the second via-hole conductor 9 c .
- the writing terminals may be provided on an outward margin provided integrally with the legs 2 c , 2 d of the container 1 and, after completion of the writing of the temperature compensation data, the margin may be separated from the legs 2 c , 2 d of the container 1 .
- the temperature-compensated crystal oscillator is electrically connected to a predetermined circuit interconnection of a mother board via the aforesaid four external terminals 14 .
- the ground external terminal 14 b and the oscillation output external terminal 14 a out of the external terminals 14 are located apart from the power source voltage external terminal 14 c and the oscillation control external terminal 14 d , noise interference with the oscillation output can effectively be prevented.
- the IC element 7 connected to the electrode pads 10 of the mounting base 6 is a rectangular flip-chip IC including a semiconductor device 7 a and a re-interconnection layer 7 b provided on a main surface of the semiconductor device 7 a for associating the connection pads of the IC element 7 with electrode pad positions as shown in FIGS. 6 ( a ) and 6 ( b ).
- the semiconductor device 7 a is provided with a temperature detection element which detects an ambient temperature, a storage element in which the temperature compensation data for compensating for the temperature characteristic of the crystal oscillator element 5 is written, a temperature compensation circuit which corrects the oscillation characteristic of the crystal oscillator element 5 on the basis of predetermined temperature compensation data for the ambient temperature, an oscillation circuit connected to the temperature compensation circuit for generating a predetermined oscillation output, and the like.
- the semiconductor device 7 a has internal connection electrodes 7 c provided on a mounting surface thereof.
- the internal connection electrodes 7 c are irregularly arranged, because the internal connection electrodes 7 c are disposed away from the elements integrated in the semiconductor device 7 a and circuit formation regions.
- the re-interconnection layer 7 b provided on the mounting surface of the semiconductor device 7 a has a plurality of insulative layers 7 d , predetermined interconnection layers 7 e (including via-hole conductors extending thickness wise of the insulative layers), and the connection pads 11 . Therefore, the connection pads 11 are arranged in a matrix configuration on the mounting surface of the re-interconnection layer 7 b so that the internal connection electrodes 7 c irregularly arranged are rearranged in association with the electrode pads 10 . In addition, the connection pads 11 are evenly distributed on the mounting surface. When the connection pads 11 are respectively bonded to the electrode pads 10 , the bonding strength can be improved with junctures between the connection pads and the electrode pads being evenly distributed.
- connection pads 11 may include a dummy connection pad connected to none of the internal connection electrodes 7 c.
- connection pads 11 provided on the lower surface of the IC element 7 are electrically connected to the corresponding electrode pads 10 provided on the upper surface of the mounting base 6 via the electrically conductive bonding members 17 such as solder bumps or gold bumps, whereby the IC element 7 is bonded to the upper surface of the mounting base 6 .
- the predetermined elements and the circuits in the IC element 7 are electrically connected to the crystal oscillator element 5 and the external terminals 14 on the lower surface of the mounting base 6 via the second via-hole conductors 9 c , the interconnection conductors 9 b and the like.
- the crystal electrode pads 10 d , 10 f , the at least two writing control electrode pads 10 b , 10 e , 10 g , and the oscillation output electrode pad 10 a , the ground electrode pad 10 h , the power source voltage electrode pad 10 c and the oscillation control electrode pad 10 i respectively connected to the external terminals 14 a , 14 b , 14 c , 14 d are longitudinally and transversely arranged in the matrix configuration.
- the connection pads 11 of the IC element 7 are provided in association with the respective electrode pads 10 and electrically connected to the electrode pads 10 .
- the electrode pads 10 are evenly arranged in the matrix configuration on the entire IC element mounting area.
- the electrode pads 10 can effectively be provided in the IC element mounting area at a higher occupation ratio. That is, a dead space in the IC element mounting area on the mounting base 6 can be minimized. This contributes to the size reduction of the temperature-compensated crystal oscillator.
- the junctures are evenly distributed in the IC element mounting area, allowing for stable bonding of the IC element 7 .
- the IC element 7 is constructed such that the re-interconnection layer 7 b is provided on the main surface of the semiconductor device 7 a for associating the connection pads of the IC element 7 with the electrode pad positions. Therefore, the electrical connection between the connection pads 11 and the electrode pads 10 can assuredly and easily be achieved.
- the electrode pads 10 may include a dummy electrode pad connected to the IC element 7 .
- the electrode pads can be arranged in a 3 ⁇ 3 square matrix configuration by providing one dummy electrode pad.
- the dummy electrodepad is associated with a connection pad 11 of the IC element 7 having no function, whereby the bonding strength of the IC element 7 can be improved.
- the electrode pads 10 are arranged linearly at a predetermined pitch in the rows and in the columns, and the respective rows are arranged perpendicularly to the respective columns.
- the junctures on the IC element 7 can evenly be arranged. Therefore, the bonding reliability of the IC element 7 is improved, and the re-interconnection layer 7 b of the IC element 7 can very easily be designed.
- the second via-hole conductors 9 c in the mounting base 6 are connected directly to the corresponding electrode pads 10 , the total length of interconnection conductors routed from the electrode pads 10 on the upper surface of the mounting base 6 can be reduced. Therefore, the possibility of a short circuit occurring due to a foreign matter adhering on the interconnection conductors can be reduced, and the design flexibility of the routing of the interconnection conductors can be improved. Not all the electrode pads are required to be connected via the second via-hole conductors 9 c .
- the crystal electrode pads 10 d , 10 f may be routed on the upper surface of the mounting base 6 in consideration of the strength of the mounting base 6 .
- the size of the crystal electrode pads 10 d , 10 f can be increased.
- the crystal electrode pads 10 d , 10 f each having an increased size are advantageous for the measurement of the initial characteristic of the crystal oscillator element 5 .
- the electrode pad 10 e surrounded by the other electrode pads 10 out of the electrode pads arranged in the matrix configuration is connected to the interconnection conductor 9 b via the second via-hole conductor 9 c .
- This obviates the need for routing an interconnection conductor from the electrode pad 10 located in an inner area on the upper surface of the mounting base 6 , thereby preventing a short circuit between the electrode pads.
- the mounting base connection electrodes 12 not connected to the external terminals 14 are provided on the upper surface of the mounting base 6 , and the container connection electrodes 13 are provided in association with the mounting base connection electrodes 12 on the lower surface of the laminate substrate 2 .
- the container connection electrodes 13 are respectively connected to the mounting base connection electrodes 13 via the electrically conductive bonding members 18 .
- the oscillation output electrode pad 10 a , the ground electrode pad 10 h , the oscillation control electrode pad 10 i and the power source voltage electrode pad 10 c are respectively connected to the external terminals 14 via the interconnection conductors 9 b .
- the arrangement of the external terminals 14 on the lower surface of the mounting base 6 can be optimized, thereby significantly contributing to the size reduction of the temperature-compensated crystal oscillator.
- the connection reliability of the IC element 7 can be maintained and improved, and the size reduction of the entire oscillator can be achieved in accordance with the present invention.
- the lid 4 of the container 1 is bonded to the laminate substrate 2 via the seal ring 3 .
- the lid 4 may be welded directly to a bonding metallization pattern preliminarily formed on the upper surface of the laminate substrate 2 .
- the seal ring 3 is attached directly to the upper surface of the laminate substrate 2 of the container 1 .
- the seal ring 3 may be attached to an upper surface of a frame composed of the same ceramic material as the laminate substrate 2 and integrated with the laminate substrate 2 .
- the lid 4 is welded to the main body of the container 1 .
- the lid 4 may be brazed to the main body of the container 1 with the use of a brazing material such as Au—Sn.
- the pair of legs 2 c , 2 d are attached to the lower surface of the container 1 .
- the legs 2 c , 2 d may each be divided into two pieces, so that four legs in total are attached to the lower surface of the container 1 .
- one of the legs 2 c , 2 d may be divided into two pieces, so that three legs in total are attached to the lower surface of the container 1 .
- an electronic element such as a capacitor connected between the power source voltage interconnection conductor and the ground potential interconnection conductor or between the oscillation output interconnection conductor and the ground potential interconnection conductor may be provided in the aforesaid space.
- a cavity accommodating therein an IC element 7 is formed in an upper surface of a mounting base 6 , and a lower surface of a container 1 is bonded to an upper surface portion of the mounting base 6 around an opening of the cavity as shown in FIGS. 10 ( a ) and 10 ( b ).
- the mounting base 6 includes laminated substrates 6 a , 6 b and legs 6 c , 6 d each having a generally rectangular section.
- the temperature-compensated crystal oscillator according to this embodiment is constructed so that the IC element 7 is disposed in a space defined between the upper surface of the mounting base 6 and the lower surface of the container 1 by the legs 6 c , 6 d and electrode pads 10 are provided on the upper surface of the mounting base 6 as shown in FIG. 3 ( a ).
- the temperature-compensated crystal oscillator having such a construction provides the same effects as the embodiment described above with reference to FIG. 1 .
- a mounting base 6 is bonded to a lower surface of a container 1 , and a cavity accommodating therein an IC element is formed in a lower surface of the mounting base 6 as shown in FIGS. 11 ( a ) and 11 ( b ).
- the mounting base 6 includes laminated substrates 6 a , 6 b and legs 6 c , 6 d each having a generally rectangular section, and is attached to the container 1 with the substrates 6 a , 6 b thereof bonded to the lower surface of the container 1 .
- the temperature-compensated crystal oscillator having such a construction provides the same effects as the embodiment described above with reference to FIG. 1 .
- FIGS. 12 and 13 a temperature-compensated crystal oscillator according to still another embodiment of the present invention will be described in detail with reference to FIGS. 12 and 13 . No explanation will be given to components having the same construction as those of the temperature-compensated crystal oscillator of FIG. 1 , but only different points will be described.
- the temperature-compensated crystal oscillator is constructed as shown in FIGS. 12 and 13 .
- the temperature-compensated crystal oscillator 1 shown in these figures has a construction such that a crystal oscillator element 5 is bonded to an upper surface of a mounting base 6 having a cavity accommodating therein an IC element 7 .
- the temperature-compensated crystal oscillator 1 includes the mounting base 6 including planar substrates 6 a , 6 b and a frame base 6 c stacked in this order and each composed of a ceramic material such as glass-ceramic or alumina ceramic, a seal ring 3 composed of a metal such as a 42-alloy, cobal or phosphor bronze, and a lid 4 composed of the same metal as the seal ring 3 .
- the seal ring 3 is attached to the upper surface of the mounting base 6 , and the lid 4 is placed and fixed to an upper surface of the seal ring 3 .
- the IC element 7 is provided in the cavity of the mounting base 6 , and the crystal oscillator element 5 is mounted inside the seal ring 3 on the upper surface of the mounting base 6 .
- a pair of mounting pads 8 a , 8 b (a mounting pad 8 b is not illustrated in FIG. 13 ) connected to oscillation electrodes of the crystal oscillator element 5 are provided on an upper surface of the frame base 6 c
- the temperature-compensated crystal oscillator having such a construction provides the same effects as the temperature-compensated crystal oscillators previously described.
Abstract
Description
- 1. Field of the Invention
- The present invention relates to a temperature-compensated crystal oscillator for use in an electronic device such as a mobile communication device.
- 2. Description of the Related Art
- Conventionally, temperature-compensated crystal oscillators are employed in electronic devices such as mobile communication devices.
- A conventionally known temperature-compensated crystal oscillator has a construction such that a
container 23 is bonded onto an upper surface of aplanar substrate 21 having a plurality ofexternal terminals 22 provided on a lower surface thereof as shown in FIGS. 21(a) and 21(b). Acrystal oscillator element 24 is accommodated in thecontainer 23. AnIC element 26 which controls an oscillation output on the basis of the oscillation of thecrystal oscillator element 24 is provided in acavity 25 defined by a lower surface of thecontainer 23 and an interior surface of aframe base 27 attached to the lower surface of thecontainer 23. - The
container 23 is adapted to hermetically seal thecrystal oscillator element 24 accommodated therein without communication with the atmosphere. Thecontainer 23 includes a base plate composed of an electrically insulative material and aseal ring 31 attached to an upper surface of the base plate. Thecrystal oscillator element 24 is attached to the upper surface of the base plate in theseal ring 31. Ametal lid 32 is welded to an upper surface of theseal ring 31 by seam welding (resistance welding), where by the space in which thecrystal oscillator element 24 is accommodated is hermetically sealed. - In general, the base plate of the
container 23 and theframe base 21 are integrally formed of a ceramic material such as glass-ceramic. Interconnection conductors are provided in and on the base plate and the frame base. A conventionally known ceramic green sheet laminating method is employed for the formation of the base plate and the frame base. - An
IC element 26 mounting area on theplanar substrate 21 is illustrated as having a rectangular shape by a solid line inFIG. 22 . As shown, a plurality ofelectrode pads 28 respectively connected to electrodes of theIC element 26 are arranged in two rows as stated, for example, in Japanese Unexamined Patent Publication No. 2001-291742. Five electrode pads are arranged in one of the two rows, and six electrode pads are arranged in the other row. - A flip
chip IC element 26 having a plurality of connection pads is employed as theIC element 26. Where the flipchip IC element 26 is mounted on a lower side of amounting base 23, the connection pads of theIC element 26 are first brought into contact with thecorresponding electrode pads 28 in theIC element 26 mounting area with the intervention of electrically conductive bonding members such as of a solder, and then the electrically conductive bonding members of the solder are heat-melted at a high temperature for the mounting of theIC element 26 on themounting base 23. - However, the plan area of the aforesaid temperature-compensated crystal oscillator is reduced to 7 mm×5 mm, to 5 mm×3 mm, and further to 3 mm×2 mm. With the size reduction of the oscillator, there is an increasing demand for the size reduction of the
IC element 26. As a result, the pitch of theelectrode pads 28 should be reduced with the need for the reduction of theIC element 26 mounting area. This reduces the bonding reliability, leading to limited flexibility inrouting interconnection conductors 29 connected to theelectrode pads 28. - In order to flatten the oscillation output by oscillation control by means of the
IC element 26 according to the specific temperature characteristic of thecrystal oscillator element 24 of the temperature-compensated crystal oscillator, the specific temperature characteristic of thecrystal oscillator element 24 should preliminarily be measured before the mounting of theIC element 26. However, the size reduction of the electrode pads makes it difficult to measure the specific temperature characteristic, drastically reducing the productivity. - An advantage of the present invention is to provide a temperature-compensated crystal oscillator which totally has a reduced size and yet maintains and improves the bonding reliability of an IC element.
- A temperature-compensated crystal oscillator comprises: a container accommodating therein a crystal oscillator element; a mounting base bonded to a lower surface of the container and having surface mounting external terminals provided on a lower surface (mounting surface) thereof; and an IC element mounted on the mounting base for controlling an oscillation output on the basis of temperature compensation data for compensating for a temperature characteristic of the crystal oscillator element; wherein a plurality of electrode pads including plural crystal electrode pads connected to the crystal oscillator element, an oscillation output electrode pad, a ground electrode pad, a power source voltage electrode pad, and plural writing control electrode pads connected to the surface mounting external terminals are arranged in a matrix configuration of m rows×n columns (wherein m and n are natural numbers not smaller than 2) in an IC element mounting area on the mounting base; wherein the IC element has a plurality of connection pads provided on a main surface thereof and electrically connected to the corresponding electrode pads. The term “surface mounting” herein means that a surface of an electronic component such as a crystal oscillator is attached directly to a mother board with the use of a solder.
- At least one of the electrode pads arranged in the IC element mounting area on the mounting base is a dummy electrode pad bonded to a corresponding one of the connection pads of the IC element.
- The electrode pads are arranged at a predetermined pitch linearly in the rows and in the columns, and the respective rows extend perpendicularly to the respective columns.
- The mounting base comprises at least two laminated insulative layers and an interconnection conductor provided between the two insulative layers and connected to a via-hole conductor disposed just below or above the electrode pads.
- The natural numbers m and n are not smaller than 3, and the electrode pad connected to the interconnection conductor via the via-hole conductor is surrounded by the other electrode pads.
- The IC element comprises a semiconductor device and a re-interconnection layer provided on a main surface of the semiconductor device for associating the connection pads of the IC element with electrode pad positions.
- The mounting base has a planar shape, and a spacer having a thickness greater than a height of the IC element is provided on the lower surface of the container.
- The mounting base has a cavity formed in an upper surface thereof and accommodating therein the IC element, and an upper surface portion of the mounting base around an opening of the cavity is bonded to the lower surface of the container.
- Alternatively, the mounting base has a cavity accommodating therein the IC element, and is bonded to the lower surface of the container with a surface portion thereof around an opening of the cavity facing downward.
- A temperature-compensated crystal oscillator comprises: a mounting base having a cavity which opens to an upper surface of the mounting base; a crystal oscillator element provided in the cavity; and an IC element provided in the cavity for controlling a predetermined oscillation output on the basis of temperature compensation data for compensating for a temperature characteristic of the crystal oscillator element; wherein the mounting base has a lower surface serving as a mounting surface; wherein a plurality of electrode pads including a pair of crystal electrode pads connected to the crystal oscillator element, an oscillation output electrode pad, a ground electrode pad, a power source voltage electrode pad and a writing electrode pad for writing the temperature compensation data are arranged in a matrix configuration of m rows×n columns (wherein m and n are natural numbers not smaller than 2) in an IC element mounting area on a bottom surface of the cavity; wherein the IC element has a plurality of connection pads provided on a lower surface thereof and electrically connected to the corresponding electrode pads.
- At least one of the electrode pads arranged in the IC element mounting area on the bottom surface of the cavity is a dummy electrode pad bonded to a corresponding one of the connection pads of the IC element.
- The electrode pads are arranged at a predetermined pitch linearly in the rows and in the columns, and the respective rows extend perpendicularly to the respective columns.
- The mounting base comprises at least two laminated insulative layers and an interconnection conductor provided between the two insulative layers and connected to a via-hole conductor disposed just below or above a predetermined one of the electrode pads.
- The natural numbers m and n are not smaller than 3, and the electrode pad connected to the interconnection conductor via the via-hole conductor is surrounded by the other electrode pads.
- The IC element comprises a semiconductor device and a re-interconnection layer provided on a main surface of the semiconductor device for associating the connection pads of the IC element with electrode pad positions.
- In the temperature-compensated crystal oscillator, at least the plural crystal electrode pads (e.g., two crystal electrode pads) connected to the crystal oscillator element, the at least two writing control electrode pads, and the oscillation output electrode pad, the ground electrode pad, the power source voltage electrode pad and an oscillation control electrode pad respectively connected to the surface mounting external terminals are provided below the lower surface of the container. That is, at least eight electrode pads are provided. In addition, these electrode pads are arranged in the matrix configuration of m rows×n columns (wherein m and n are natural numbers not smaller than 2). The connection pads of the IC element are electrically connected to the corresponding electrode pads. Therefore, the electrode pads are evenly arranged in a not smaller than 3×3 matrix configuration (e.g., in a 3×4 matrix configuration).
- Thus, the electrode pads are provided in the generally entire IC element mounting area. Even if the size of the IC element is reduced, the occupation ratio of the electrode pads in the IC element mounting area can be increased, and a dead space in the container and a dead space in the IC element mounting area can be eliminated. This significantly contributes to the size reduction of the entire temperature-compensated crystal oscillator.
- Where the IC element is bonded to the electrode pads via electrically conductive bonding members, junctures of the electrode pads are distributed over the generally entire lower surface of the IC element. Therefore, the IC element can stably be bonded to the electrode pads.
- The IC element adapted for the electrode pads is constructed such that the laminate interconnection substrate (re-interconnection layer) is integrally provided on the mounting surface of the semiconductor device and protected by a resin such as an epoxy resin. The connection pads are provided on the mounting surface of the laminate interconnection substrate in association with the electrode pads. The IC element having such a construction can very easily be mounted on the aforesaid electrode pads and electrically connected to the electrode pads.
- At least one of the electrode pads arranged in the m×n matrix configuration (wherein m and n are natural numbers not smaller than 2) in the IC element mounting area in the container is the dummy electrode pad connected to the corresponding connection pad of the IC element. Where the minimum necessary number of the electrode pads is eight as described above, for example, the electrode pads can be arranged in a 3×3 square matrix configuration by providing one dummy electrode pad. Thus, the bonding strength of the IC element is improved by providing the dummy electrode pad in association with a connection pad of the IC element having no function without the need for providing an under-fill resin which is conventionally widely used for the improvement of the bonding strength of the IC element.
- The electrode pads are arranged at the predetermined pitch linearly in the rows and in the columns, and the respective rows extend perpendicularly to the respective columns. Thus, the junctions of the IC element are evenly located, so that the bonding reliability of the IC element is improved. Further, the re-interconnection layer of the IC element can very easily be designed.
- The mounting base has a structure such that the at least two insulative layers are laminated and the interconnection conductor connected to the via-hole conductor disposed just below or above the predetermined electrode pad is provided between the two insulative layers. That is, there is no need for routing an interconnection conductor from the electrode pad on the surface of the mounting base, making it possible to prevent a short circuit which may otherwise occur due to a foreign matter adhering on the exposed interconnection conductor. Further, an electrically conductive bonding member can be prevented from flowing out of an electrode pad region. Thus, the IC element can be bonded to the mounting base with a higher reliability.
- The natural numbers m and n are not smaller than 3, and the electrode pad connected to the interconnection conductor via the via-hole conductor is surrounded by the other electrode pads. Thus, there is no need for routing the interconnection conductor from the electrode pad located at an inner position of the matrix configuration on the surface of the mounting base, making it possible to prevent a short circuit between the electrode pads. The electrode pad surrounded by the other electrode pads herein includes three or four adjacent electrode pads arranged in a row or in a column.
- The mounting base has a planar shape, and the spacer having a thickness greater than the height of the IC element is provided on the lower surface of the container.
- The cavity accommodating therein the IC element is provided in the upper surface of the mounting base, and the upper surface portion of the mounting base around the opening of the cavity is bonded to the lower surface of the container.
- Alternatively, the mounting base has the cavity accommodating therein the IC element, and is bonded to the lower surface of the container with the surface portion thereof around the opening of the cavity facing downward.
- In the temperature-compensated crystal oscillator, the cavity opens to the upper surface of the mounting base, and the crystal oscillator element and the IC element for controlling the predetermined oscillation output on the basis of the temperature compensation data for compensating for the temperature characteristic of the crystal oscillator element are accommodated in the cavity. The lower surface of the mounting base serves as the mounting surface. At least eight electrode pads are provided in the IC element mounting area on the bottom surface of the cavity. The electrode pads are arranged in the matrix configuration of m rows×n columns (wherein m and n are natural numbers not smaller than 2). The connection pads of the IC element are electrically connected to the corresponding electrode pads. The electrode pads are arranged in a not smaller than 3×3 matrix configuration (e.g., in a 3×4 matrix configuration).
- Thus, the electrode pads are provided in the generally entire IC element mounting area. Even if the size of the IC element is reduced, the occupation ratio of the electrode pads in the IC element mounting area can be increased, and a dead space in the container and a dead space in the IC element mounting area can be eliminated. This significantly contributes to the size reduction of the temperature-compensated crystal oscillator.
- Where the IC element is bonded to the electrode pads via electrically conductive bonding members, the junctures are distributed over the generally entire lower surface of the IC element. Therefore, the IC element can stably be bonded to the electrode pads.
- The IC element adapted for the electrode pads is constructed such that the laminate interconnection substrate (re-interconnection layer) is provided on the mounting surface of the semiconductor device and protected by a resin such as an epoxy resin. The connection pads are provided on the mounting surface of the laminate interconnection substrate in association with the electrode pads. The IC element having such a construction can very easily be mounted on the aforesaid electrode pads and electrically connected to the electrode pads.
- The electrode pads arranged in the m×n matrix configuration (wherein m and n are natural numbers not smaller than 2) in the IC element mounting area on the bottom surface of the cavity of the mounting base include the dummy electrode pad connected to the IC element. Where the minimum necessary number of the electrode pads is eight as described above, for example, the electrode pads can be arrange in a 3×3 square matrix configuration by providing one dummy electrode pad. Thus, the bonding strength of the IC element is improved by providing the dummy electrode in association with a connection pad of the IC element having no function without the need for providing an under-fill resin which is conventionally widely used for the improvement of the bonding strength of the IC element. Further, the crystal oscillator element is prevented from being adversely influenced by out-gassing from the under-fill resin.
- The electrode pads are arranged at a predetermined pitch linearly in the rows and in the columns, and the respective rows extend perpendicularly to the respective columns. Thus, the junctures of the IC element are evenly located, so that the bonding reliability of the IC element is improved. Further, the re-interconnection layer of the IC element can very easily be designed.
- The mounting base has a structure such that the at least two insulative layers are laminated and the interconnection conductor connected to the via-hole conductor disposed just below or above the predetermined electrode pad is provided between the two insulative layers. That is, there is no need for routing an interconnection conductor from the electrode pad on the surface of the mounting base, making it possible to prevent a short circuit which may otherwise occur due to a foreign matter adhering on the exposed interconnection conductor. Further, an electrically conductive bonding member can be prevented from flowing out of the electrode pad region. Thus, the IC element can be bonded with a higher reliability.
- The natural numbers m and n are not smaller than 3, and the electrode pad connected to the interconnection conductor via the via-hole conductor is surrounded by the other electrode pads. Thus, there is no need for routing the interconnection conductor from the electrode pad located at an inner position in the matrix configuration on the surface of the mounting base, making it possible to prevent a short circuit between the electrode pads. The electrode pad surrounded by the other electrode pads herein includes three or four adjacent electrode pads arranged in a row or in a column.
- According to the present invention, even if the size of the IC element is reduced for the size reduction of the temperature-compensated crystal oscillator, the bonding reliability of the IC element can be maintained and improved. This significantly contributes to the size reduction of the entire temperature-compensated crystal oscillator.
-
FIG. 1 is a perspective view of a temperature-compensated crystal oscillator according to one embodiment of the present invention; -
FIG. 2 is a sectional view of the temperature-compensated crystal oscillator ofFIG. 1 ; -
FIG. 3 (a) is a plan view of a mounting base of the temperature-compensated crystal oscillator ofFIG. 1 as seen from an upper side thereof, and FIGS. 3(b) and 3(c) are plan views illustrating other conceivable arrangements of electrode pads provided in an IC element mounting area of the mounting base; -
FIG. 4 is a plan view illustrating interconnection conductors and via-hole conductors provided in a laminate substrate of the mounting base; -
FIG. 5 is a plan view illustrating the mounting base of the temperature-compensated crystal oscillator ofFIG. 1 as seen through from a lower side thereof; - FIGS. 6(a) and 6(b) are a sectional view of an IC element of the temperature-compensated crystal oscillator of
FIG. 1 and a plan view of the IC element as seen from the lower side thereof, respectively; -
FIG. 7 is an exploded sectional view of a temperature-compensated crystal oscillator according to another embodiment of the present invention, particularly illustrating connection of a crystal electrode pad; -
FIG. 8 is an exploded sectional view of a temperature-compensated crystal oscillator according to another embodiment of the present invention, particularly illustrating connection of an electrode pad to an external terminal; -
FIG. 9 is an exploded sectional view of a temperature-compensated crystal oscillator according to another embodiment of the present invention, particularly illustrating extraction of a writing control electrode pad; - FIGS. 10(a) and 10(b) are a perspective view and a sectional view, respectively, illustrating a temperature-compensated crystal oscillator according to another embodiment of the present invention;
- FIGS. 11(a) and 11(b) are a perspective view and a sectional view, respectively, illustrating a temperature-compensated crystal oscillator according to further another embodiment of the present invention;
-
FIG. 12 is a perspective view illustrating a temperature-compensated crystal oscillator according to still another embodiment of the present invention; -
FIG. 13 is a sectional view of the temperature-compensated crystal oscillator ofFIG. 12 ; -
FIG. 14 (a) is a plan view of a mounting base of the temperature-compensated crystal oscillator ofFIG. 12 as seen from an upper side thereof, and FIGS. 14(b) and 14(c) are plan views illustrating other conceivable arrangements of electrode pads provided in an IC element mounting area of the mounting base; -
FIG. 15 is a plan view illustrating interconnection conductors and via-hole conductors provided in the mounting base of the temperature-compensated crystal oscillator ofFIG. 12 ; -
FIG. 16 is a plan view of the temperature-compensated crystal oscillator ofFIG. 12 as seen from a lower side thereof; - FIGS. 17(a) and 17(b) are a sectional view of an IC element of the temperature-compensated crystal oscillator of
FIG. 12 , and a plan view of the IC element as seen from the lower side thereof, respectively; -
FIG. 18 is a sectional view of a temperature-compensated crystal oscillator according to another embodiment of the present invention, particularly illustrating connection of a crystal electrode pad; -
FIG. 19 is a sectional view of a temperature-compensated crystal oscillator according to another embodiment of the present invention; -
FIG. 20 is a sectional view of a temperature-compensated crystal oscillator according to another embodiment of the present invention; - FIGS. 21(a) and 21(b) are a sectional view of a conventional temperature-compensated crystal oscillator, and a plan view of the temperature-compensated crystal oscillator as seen from a lower side thereof, respectively; and
-
FIG. 22 is a plan view illustrating an IC element mounting area of the conventional temperature-compensated crystal oscillator. - The inventive temperature-compensated crystal oscillators will hereinafter be described in detail with reference to the attached drawings.
-
FIG. 1 is a perspective view of a temperature-compensated crystal oscillator according to one embodiment of the present invention, andFIG. 2 is a sectional view of the temperature-compensated crystal oscillator ofFIG. 1 . - The temperature-compensated crystal oscillator shown in these figures has a construction such that a
planar mounting base 6 provided with anIC element 7 is bonded to a lower surface of acontainer 1 in which acrystal oscillator element 5 is accommodated. - The
container 1 includes alaminate substrate 2 composed of a ceramic material such as glass-ceramic or alumina ceramic, aseal ring 3 composed of a metal such as a 42-alloy, cobal or phosphor bronze, and alid 4 composed of the same metal as theseal ring 3. Theseal ring 3 is attached to an upper surface of thelaminate substrate 2, and thelid 4 is placed and fixed onto an upper surface of theseal ring 3. Thecrystal oscillator element 5 is mounted on the upper surface of thelaminate substrate 2 inside theseal ring 3. - The
container 1 has a space defined by the upper surface of thelaminate substrate 2, an interior surface of theseal ring 3 and a lower surface of thelid 4, and thecrystal oscillator element 5 is accommodated in this space and hermetically sealed. A pair of mountingpads 8 a, 8 b (a mounting pad 8 b is not shown inFIG. 2 ) connected to oscillation electrodes of thecrystal oscillator element 5 are provided on the upper surface of thelaminate substrate 2. - As shown in
FIG. 2 , thelaminate substrate 2 haslegs legs laminate substrate 2. A plurality ofcontainer connection electrodes 13 are provided on lower surfaces of thelegs - The
laminate substrate 2 including thelegs hole conductors 9 a, fifth via-hole conductors 9 f andinterconnection conductors 9 b provided therein. - Where the
laminate substrate 2 of thecontainer 1 is composed of a ceramic material such as glass-ceramic, thelaminate substrate 2 is produced, for example, by applying an electrically conductive paste in a predetermined pattern by printing to form the mountingpads 8 a, 8 b and theinterconnection conductors 9 b on surfaces of a ceramic green sheet prepared by mixing an organic solvent or the like with ceramic material powder, forming conductors as the first via-hole conductors 9 a and the fifth via-hole conductors 9 f in ceramic green sheets, stacking and pressing these ceramic green sheets, and sintering the resulting laminate at a high temperature. - The
seal ring 3 and thelid 4 of thecontainer 1 are produced by forming a metal such as a 42-alloy into predetermined configurations by a conventionally known metal processing method. Thecontainer 1 is assembled by brazing theseal ring 3 to an electrically conductive layer preliminarily formed on the upper surface of thelaminate substrate 2, mounting and fixing thecrystal oscillator element 5 to the upper surface of thelaminate substrate 2 with the use of electricallyconductive bonding members 16, performing an initial frequency adjustment of thecrystal oscillator element 5, and bonding theaforesaid lid 4 to the upper surface of theseal ring 3 in a predetermined atmosphere by a conventionally known resistance welding method or the like. Where theseal ring 3 and thelid 4 are thus bonded by the resistance wielding, theseal ring 3 and thelid 4 are each preliminarily coated with an Ni layer, an Au layer or the like by plating. - The
crystal oscillator element 5 accommodated in thecontainer 1 is produced by forming the pair of oscillation electrodes on opposite main surfaces of a crystal piece cut along a predetermined crystal axis, and is capable of oscillating at a predetermined frequency. Thecrystal oscillator element 5 is mounted on the upper surface of thelaminate substrate 2 with the pair of oscillation electrodes thereof electrically connected to the mountingpads 8 a, 8 b (collectively denoted by a reference numeral 8) on the upper surface of thelaminate substrate 2 via the electricallyconductive bonding members 16. Thus, the electrical connection and the mechanical connection between thecrystal oscillator element 5 and thecontainer 1 are simultaneously achieved. - Where the
metal lid 4 of thecontainer 1 is connected to an external ground terminal 14 (to be described later) via the electrodes and the interconnection conductors provided in and on thelaminate substrate 2 of thecontainer 1 and the mountingbase 6, thecontainer 1 has a shielding function with thelid 4 being grounded in use. Thus, thecrystal oscillator element 5 and the IC element 7 (to be described later) can be protected from unwanted external electromagnetic noises. - The mounting
base 6 includeslaminated substrates hole conductors 9 a, fifth via-hole conductors 9 f andinterconnection conductors 9 b, as well as fourth via-hole conductors 9 e, second via-hole conductors 9 c, third via-hole conductors 9 d andinterconnection conductors 9 b provided therein. - Where the mounting
base 6 is composed of a ceramic material such as glass-ceramic, the mountingbase 6 is produced, for example, by applying an electrically conductive paste in a predetermined pattern by printing to form theinterconnection conductors 9 b on a surface of a ceramic green sheet prepared by mixing a proper organic solvent or the like with ceramic material powder, forming conductors as the fourth via-hole conductors 9 e, the second via-hole conductors 9 c and the third via-hole conductors 9 d in ceramic green sheets, stacking and pressing these ceramic green sheets, and sintering the resulting laminate at a high temperature. - A plurality of
electrode pads 10 connected toconnection pads 11 of theIC element 7 provided between thelegs container 1 are provided on a center portion of an upper surface of the mountingbase 6. That is, thelegs container 1 and the upper surface of the mountingbase 6 for mounting theIC element 7. - As shown in
FIG. 3 (a), two crystal electrode pads 10 d, 10 f, an oscillation output electrode pad 10 a, agroundelectrode pad 10 h, a power sourcevoltage electrode pad 10 c, an oscillation control electrode pad 10 i and at least two or more writingcontrol electrode pads connection pads 11 of theIC element 7 via electricallyconductive bonding members 17 such as of a solder are arranged, for example, in a matrix configuration of 3 rows×3 columns in an IC element mounting area where theIC element 7 is mounted on the upper surface of the mountingbase 6. Where theconnection pads 11 of theIC element 7 are respectively connected to theelectrode pads 10 via solder bumps, theconnection pads 11 are preferably configured so as to cover thecorresponding electrode pads 10, i.e., so as to have slightly greater sizes than the correspondingelectrode pads 10. Thus, solder balls respectively formed on theconnection pads 11 do not drop out of theconnection pads 11. Even if the IC element is slightly offset, a short circuit between the adjacent electricallyconductive bonding members 17 can be prevented. - Although the
electrode pads 10 generally arranged longitudinally and transversely in a matrix configuration of m rows×n columns (wherein m and n are natural numbers not smaller than 2) are herein arranged in a square matrix configuration as shown inFIG. 3 (a), theelectrode pads 10 may be arranged as shown inFIG. 3 (b) orFIG. 3 (c). Where two ormore electrode pads 10 are linearly arranged, the linear arrangement of theelectrode pads 10 is regarded as a row or a column. Where theelectrode pads 10 are arranged in the IC element mounting area as shown inFIG. 3 (b), for example, theelectrode pads 10 are regarded to be arranged in a 3×2 matrix configuration. Where theelectrode pads 10 are arranged as shown inFIG. 3 (c), theelectrodes 10 are regarded to be arranged in a 3×4 matrix configuration. - Where eight electrode pads are required for an operation of the temperature-compensated crystal oscillator as described above, one dummy electrode pad is provided for arranging the electrode pads in a 3×3 matrix configuration. Where the total number of the electrode pads is increased due to provision of an increased number of writing
control electrode pads 10, dummy electrode pads are additionally provided for arranging the electrode pads in a 3×4 matrix configuration, in a 4×4 matrix configuration or in a 4×5 matrix configuration. - As shown in
FIG. 4 , theinterconnection conductors 9 b, the fourth via-hole conductors 9 e connected to theinterconnection conductors 9 b and extending downward in the mountingbase 6, and the second via-hole conductors 9 c and the third via-hole conductors 9 d extending upward from theinterconnection conductors 9 b are provided in the mountingbase 6. The formation of theinterconnection conductors 9 b and the first to third via-hole conductors - On the other hand, the
interconnection conductors 9 b, the first via-hole conductors 9 a connected to theinterconnection conductors 9 b and extending upward in thelaminate substrate 2 and the fifth via-hole conductors 9 f extending downward from theinterconnection conductors 9 b are provided in thelaminate substrate 2. The formation of theinterconnection conductors 9 b and the forth and fifth via-hole conductors - The fourth via-
hole conductors 9 e respectively connectexternal terminals 14 to predetermined ones of theinterconnection conductors 9 b. - The fifth via-
hole conductors 9 f respectively connect thecontainer connection electrodes 13 on the lower surface of thelaminate substrate 2 to predetermined ones of theinterconnection conductors 9 b. - Here, the first via-
hole conductors 9 a respectively connect the mounting pads 8 connected to thecrystal oscillator element 5 located on the upper surface of thelaminate substrate 2 to predetermined ones of theinterconnection conductors 9 b. Similarly, aninterconnection conductor 9 kept at a ground potential is connected to theseal ring 3. - The second via-
hole conductors 9 c respectively connect theelectrode pads 10 provided on the mountingbase 6 to predetermined ones of theinterconnection conductors 9 b. - Further, the third via-
hole conductors 9 d respectively connect mountingbase connection electrodes 12 provided on the upper surface of the mountingbase 6 to predetermined ones of theinterconnection conductors 9 b. - Therefore, the crystal electrode pads 10 d and 10 f are respectively connected to the mounting pads 8 of the
crystal oscillator element 5 via the second via-hole conductor 9 c, theinterconnection conductor 9 b, the third via-hole conductor 9 d, the mountingbase connection electrode 12, thecontainer connection electrode 13, the fifth via-hole conductor 9 f, theinterconnection conductor 9 b and the first via-hole conductor 9 a, and to the mountingbase connection electrode 12 via the second via-hole conductor 9 c, theinterconnection conductor 9 b and the third via-hole conductor 9 d, for example, as shown in an exploded diagram ofFIG. 7 . - The oscillation output electrode pad 10 a is connected to the mounting
base connection electrode 12 via the second via-hole conductor 9 c, theinterconnection conductor 9 b and the third via-hole conductor 9 d as shown on a right-hand side of an exploded diagram ofFIG. 8 . - The
ground electrode pad 10 h is connected to the mountingbase connection electrodes 12 via the second via-hole conductor 9 c, theinterconnection conductor 9 b and the third via-hole conductor 9 d as shown on a left-hand side of an exploded diagram ofFIG. 8 . The mountingbase connection electrode 12 is connected to theseal ring 3 via thecontainer connection electrode 13, the fifth via-hole conductor 9 f and the first via-hole conductor 9 a. - Like the oscillation output electrode pad 10 a, the power source
voltage electrode pad 10 c and the oscillation control electrode pad 10 i are respectively connected to the mountingbase connection electrodes 12 via the second via-hole conductors 9 c, theinterconnection conductors 9 b and the third via-hole conductors 9 d. - The writing
control electrode pads base connection electrodes 12 via the second via-hole conductors 9 c, theinterconnection conductors 9 b and the third via-hole conductors 9 d. - As shown in a bottom view of
FIG. 5 , the plurality of mounting base connection electrodes 12 (indicated by broken lines inFIG. 5 ) electrically and/or mechanically connected to the correspondingcontainer connection electrodes 13 on the lower surface of thecontainer 1 are disposed on the upper surface of the mountingbase 6. Fourexternal terminals 14 a to 14 d (anoscillation output terminal 14 a, aground terminal 14 b, a powersource voltage terminal 14 c and anoscillation control terminal 14 d) are respectively provided in four corners on the lower surface of the mountingbase 6. Theexternal terminals 14 are electrically connected to thecorresponding connection electrodes 12 via electrically conductive films or the like provided at the corners of the mountingbase 6. Where theexternal terminals 14 overlap thicknesswise with thecorresponding connection electrodes 12, theexternal terminals 14 may be connected to thecorresponding connection electrodes 12 via via-hole conductors 9. - Here, the
container connection electrodes 13 on the lower surface of thecontainer 1 are provided in one-to-one correspondence with the mountingbase connection electrodes 12 on the upper surface of the mountingbase 6, and firmly connected to the mountingbase connection electrodes 12 via electricallyconductive bonding members 18. In this embodiment, five mountingbase connection electrodes 12 are provided on each side on the upper surface of the mountingbase 6. Out of the ten mountingbase connection electrodes 12 in total, only the mountingbase connection electrodes 12 connected to the crystal electrode pads 10 d, 10 f and the writingcontrol electrode pads container connection electrodes 13 on thecontainer 1. The mountingbase connection electrodes 12 connected to theground electrode pad 10 h, the power sourcevoltage electrode pad 10 c, the oscillation control electrode pad 10 i and the oscillation output electrode pad 10 a are not extracted through thecontainer connection electrodes 13. Theground electrode pad 10 h, the power sourcevoltage electrode pad 10 c, the oscillation control electrode pad 10 i and the oscillation output electrode 10 a are electrically connected to the correspondingexternal terminals 14 via none of the mountingbase connection electrodes 12, but via the second via-hole conductors 9 c, theinterconnection conductors 9 b and the fourth via-hole conductors 9 e. - The
container connection electrodes 13 connected to the crystal electrode pads (the crystal oscillator element 5) are used as measurement pads for measuring the oscillation characteristic of thecrystal oscillator element 5 in a hermetically sealed state. The crystal electrode pads 10 d, 10 f may be formed as having a greater size, and employed as the measurement pads for the measurement of the oscillation characteristic before the mounting of theIC element 7. - The
container connection electrodes 13 respectively connected to the writing control electrode pads are connected to writing terminals provided on a lateral side of the oscillator for writing temperature compensation data to a temperature compensation circuit. For example, thecontainer connection electrodes 13 are partly exposed in recesses 1 a defined in the vicinity of junctures between thelegs container 1 and the mountingbase 6 as shown inFIG. 9 . Thus, the temperature compensation data according to the temperature characteristic of thecrystal oscillator element 5 can be written in a memory provided in the temperature compensation circuit of theIC element 7 by bringing a probe needle of a data writing device into contact with the writing terminals. Connection paths from the container-connection electrodes 13 or the mountingbase connection electrodes 12 to the writing control electrode pads are each established through the third via-hole conductor 9 d, theinterconnection conductor 9 b and the second via-hole conductor 9 c. Alternatively, the writing terminals may be provided on an outward margin provided integrally with thelegs container 1 and, after completion of the writing of the temperature compensation data, the margin may be separated from thelegs container 1. - The temperature-compensated crystal oscillator is electrically connected to a predetermined circuit interconnection of a mother board via the aforesaid four
external terminals 14. Where the groundexternal terminal 14 b and the oscillation output external terminal 14 a out of theexternal terminals 14 are located apart from the power source voltageexternal terminal 14 c and the oscillation controlexternal terminal 14 d, noise interference with the oscillation output can effectively be prevented. - The
IC element 7 connected to theelectrode pads 10 of the mountingbase 6 is a rectangular flip-chip IC including asemiconductor device 7 a and are-interconnection layer 7 b provided on a main surface of thesemiconductor device 7 a for associating the connection pads of theIC element 7 with electrode pad positions as shown in FIGS. 6(a) and 6(b). Thesemiconductor device 7 a is provided with a temperature detection element which detects an ambient temperature, a storage element in which the temperature compensation data for compensating for the temperature characteristic of thecrystal oscillator element 5 is written, a temperature compensation circuit which corrects the oscillation characteristic of thecrystal oscillator element 5 on the basis of predetermined temperature compensation data for the ambient temperature, an oscillation circuit connected to the temperature compensation circuit for generating a predetermined oscillation output, and the like. - The
semiconductor device 7 a hasinternal connection electrodes 7 c provided on a mounting surface thereof. Theinternal connection electrodes 7 c are irregularly arranged, because theinternal connection electrodes 7 c are disposed away from the elements integrated in thesemiconductor device 7 a and circuit formation regions. - The
re-interconnection layer 7 b provided on the mounting surface of thesemiconductor device 7 a has a plurality ofinsulative layers 7 d,predetermined interconnection layers 7 e (including via-hole conductors extending thickness wise of the insulative layers), and theconnection pads 11. Therefore, theconnection pads 11 are arranged in a matrix configuration on the mounting surface of there-interconnection layer 7 b so that theinternal connection electrodes 7 c irregularly arranged are rearranged in association with theelectrode pads 10. In addition, theconnection pads 11 are evenly distributed on the mounting surface. When theconnection pads 11 are respectively bonded to theelectrode pads 10, the bonding strength can be improved with junctures between the connection pads and the electrode pads being evenly distributed. - For the improvement of the bonding strength between the
IC element 7 and theelectrode pads 10, theconnection pads 11 may include a dummy connection pad connected to none of theinternal connection electrodes 7 c. - The
connection pads 11 provided on the lower surface of theIC element 7 are electrically connected to thecorresponding electrode pads 10 provided on the upper surface of the mountingbase 6 via the electricallyconductive bonding members 17 such as solder bumps or gold bumps, whereby theIC element 7 is bonded to the upper surface of the mountingbase 6. Thus, the predetermined elements and the circuits in theIC element 7 are electrically connected to thecrystal oscillator element 5 and theexternal terminals 14 on the lower surface of the mountingbase 6 via the second via-hole conductors 9 c, theinterconnection conductors 9 b and the like. - In the inventive temperature-compensated crystal oscillator, the crystal electrode pads 10 d, 10 f, the at least two writing
control electrode pads ground electrode pad 10 h, the power sourcevoltage electrode pad 10 c and the oscillation control electrode pad 10 i respectively connected to theexternal terminals connection pads 11 of theIC element 7 are provided in association with therespective electrode pads 10 and electrically connected to theelectrode pads 10. Thus, theelectrode pads 10 are evenly arranged in the matrix configuration on the entire IC element mounting area. - Even if the size of the
IC element 7 is reduced, theelectrode pads 10 can effectively be provided in the IC element mounting area at a higher occupation ratio. That is, a dead space in the IC element mounting area on the mountingbase 6 can be minimized. This contributes to the size reduction of the temperature-compensated crystal oscillator. - Further, when the
IC element 7 is bonded to theelectrode pads 10 via the electricallyconductive bonding members 17, the junctures are evenly distributed in the IC element mounting area, allowing for stable bonding of theIC element 7. - The
IC element 7 is constructed such that there-interconnection layer 7 b is provided on the main surface of thesemiconductor device 7 a for associating the connection pads of theIC element 7 with the electrode pad positions. Therefore, the electrical connection between theconnection pads 11 and theelectrode pads 10 can assuredly and easily be achieved. - Further, the
electrode pads 10 may include a dummy electrode pad connected to theIC element 7. Where the minimum necessary number of the electrode pads is eight, for example, the electrode pads can be arranged in a 3×3 square matrix configuration by providing one dummy electrode pad. The dummy electrodepad is associated with aconnection pad 11 of theIC element 7 having no function, whereby the bonding strength of theIC element 7 can be improved. Hence, there is no need for providing an under-fill resin which is conventionally widely used for the improvement of the bonding strength of the IC element. - As indicated by broken lines in
FIG. 3 (a), theelectrode pads 10 are arranged linearly at a predetermined pitch in the rows and in the columns, and the respective rows are arranged perpendicularly to the respective columns. Thus, the junctures on theIC element 7 can evenly be arranged. Therefore, the bonding reliability of theIC element 7 is improved, and there-interconnection layer 7 b of theIC element 7 can very easily be designed. - Since the second via-
hole conductors 9 c in the mountingbase 6 are connected directly to thecorresponding electrode pads 10, the total length of interconnection conductors routed from theelectrode pads 10 on the upper surface of the mountingbase 6 can be reduced. Therefore, the possibility of a short circuit occurring due to a foreign matter adhering on the interconnection conductors can be reduced, and the design flexibility of the routing of the interconnection conductors can be improved. Not all the electrode pads are required to be connected via the second via-hole conductors 9 c. This means that some of the outermost electrode pads out of theelectrode pads 10 arranged in the matrix configuration, e.g., the crystal electrode pads 10 d, 10 f, maybe routed on the upper surface of the mountingbase 6 in consideration of the strength of the mountingbase 6. Thus, the size of the crystal electrode pads 10 d, 10 f can be increased. The crystal electrode pads 10 d, 10 f each having an increased size are advantageous for the measurement of the initial characteristic of thecrystal oscillator element 5. - The electrode pad 10 e surrounded by the
other electrode pads 10 out of the electrode pads arranged in the matrix configuration is connected to theinterconnection conductor 9 b via the second via-hole conductor 9 c. This obviates the need for routing an interconnection conductor from theelectrode pad 10 located in an inner area on the upper surface of the mountingbase 6, thereby preventing a short circuit between the electrode pads. - The mounting
base connection electrodes 12 not connected to theexternal terminals 14 are provided on the upper surface of the mountingbase 6, and thecontainer connection electrodes 13 are provided in association with the mountingbase connection electrodes 12 on the lower surface of thelaminate substrate 2. Thecontainer connection electrodes 13 are respectively connected to the mountingbase connection electrodes 13 via the electricallyconductive bonding members 18. With this arrangement, the mechanical connection between thecontainer connection electrodes 13 and the mountingbase connection electrodes 12 can be achieved whether or not thecontainer connection electrodes 13 have an electrical function. Therefore, the mechanical connection strength between thecontainer 1 and the mountingbase 6 can be improved. - Further, the oscillation output electrode pad 10 a, the
ground electrode pad 10 h, the oscillation control electrode pad 10 i and the power sourcevoltage electrode pad 10 c are respectively connected to theexternal terminals 14 via theinterconnection conductors 9 b. Thus, the arrangement of theexternal terminals 14 on the lower surface of the mountingbase 6 can be optimized, thereby significantly contributing to the size reduction of the temperature-compensated crystal oscillator. - Thus, even if the size of the
IC element 7 is reduced for the size reduction of the temperature-compensated crystal oscillator, the connection reliability of theIC element 7 can be maintained and improved, and the size reduction of the entire oscillator can be achieved in accordance with the present invention. - It should be understood that the present invention be not limited to the embodiment described above, but various changes and modifications may be made without departing from the scope of the present invention.
- In the embodiment described above, the
lid 4 of thecontainer 1 is bonded to thelaminate substrate 2 via theseal ring 3. Alternatively, thelid 4 may be welded directly to a bonding metallization pattern preliminarily formed on the upper surface of thelaminate substrate 2. - In the embodiment described above, the
seal ring 3 is attached directly to the upper surface of thelaminate substrate 2 of thecontainer 1. Alternatively, theseal ring 3 may be attached to an upper surface of a frame composed of the same ceramic material as thelaminate substrate 2 and integrated with thelaminate substrate 2. - In the embodiment described above, the
lid 4 is welded to the main body of thecontainer 1. Alternatively, thelid 4 may be brazed to the main body of thecontainer 1 with the use of a brazing material such as Au—Sn. - In the embodiment described above, the pair of
legs container 1. Alternatively, thelegs container 1. Further, one of thelegs container 1. - Although only the
IC element 7 is disposed in the space defined between the upper surface of the mountingbase 6 and the lower surface of thecontainer 1 by bonding thecontainer 1 to the mountingbase 6 in the embodiment described above, an electronic element such as a capacitor connected between the power source voltage interconnection conductor and the ground potential interconnection conductor or between the oscillation output interconnection conductor and the ground potential interconnection conductor may be provided in the aforesaid space. - Next, an explanation will be given to another embodiment of the present invention. In this embodiment, a cavity accommodating therein an
IC element 7 is formed in an upper surface of a mountingbase 6, and a lower surface of acontainer 1 is bonded to an upper surface portion of the mountingbase 6 around an opening of the cavity as shown in FIGS. 10(a) and 10(b). The mountingbase 6 includeslaminated substrates legs - The temperature-compensated crystal oscillator according to this embodiment is constructed so that the
IC element 7 is disposed in a space defined between the upper surface of the mountingbase 6 and the lower surface of thecontainer 1 by thelegs electrode pads 10 are provided on the upper surface of the mountingbase 6 as shown inFIG. 3 (a). - The temperature-compensated crystal oscillator having such a construction provides the same effects as the embodiment described above with reference to
FIG. 1 . - Next, an explanation will be given to further another embodiment of the present invention. In this embodiment, a mounting
base 6 is bonded to a lower surface of acontainer 1, and a cavity accommodating therein an IC element is formed in a lower surface of the mountingbase 6 as shown in FIGS. 11(a) and 11(b). The mountingbase 6 includeslaminated substrates legs container 1 with thesubstrates container 1. - The temperature-compensated crystal oscillator having such a construction provides the same effects as the embodiment described above with reference to
FIG. 1 . - Next, a temperature-compensated crystal oscillator according to still another embodiment of the present invention will be described in detail with reference to
FIGS. 12 and 13 . No explanation will be given to components having the same construction as those of the temperature-compensated crystal oscillator ofFIG. 1 , but only different points will be described. - The temperature-compensated crystal oscillator is constructed as shown in
FIGS. 12 and 13 . - The temperature-compensated
crystal oscillator 1 shown in these figures has a construction such that acrystal oscillator element 5 is bonded to an upper surface of a mountingbase 6 having a cavity accommodating therein anIC element 7. - The temperature-compensated
crystal oscillator 1 includes the mountingbase 6 includingplanar substrates frame base 6 c stacked in this order and each composed of a ceramic material such as glass-ceramic or alumina ceramic, aseal ring 3 composed of a metal such as a 42-alloy, cobal or phosphor bronze, and alid 4 composed of the same metal as theseal ring 3. Theseal ring 3 is attached to the upper surface of the mountingbase 6, and thelid 4 is placed and fixed to an upper surface of theseal ring 3. TheIC element 7 is provided in the cavity of the mountingbase 6, and thecrystal oscillator element 5 is mounted inside theseal ring 3 on the upper surface of the mountingbase 6. A pair of mountingpads 8 a, 8 b (a mounting pad 8 b is not illustrated inFIG. 13 ) connected to oscillation electrodes of thecrystal oscillator element 5 are provided on an upper surface of theframe base 6 c. - As shown in FIGS. 14(a), 14(b) and 14(c), a pair of crystal electrode pads 10 d, 10 f, an oscillation output electrode pad 10 a, a
ground electrode pad 10 h, a power sourcevoltage electrode pad 10 c, an oscillation control electrode pad 10 i and at least two or more temperature compensation data writingelectrode pads connection pads 11 of theIC element 7 via electricallyconductive bonding members 17 such as of a solder are arranged in a matrix configuration, e.g., in a 3×3 matrix configuration, in an IC element mounting area on a center portion of the upper surface of theplanar substrate 6 b. - The temperature-compensated crystal oscillator having such a construction provides the same effects as the temperature-compensated crystal oscillators previously described.
Claims (15)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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US11/474,565 US7242258B2 (en) | 2003-05-29 | 2006-06-26 | Temperature-compensated crystal oscillator |
US12/500,454 USRE44368E1 (en) | 2003-05-29 | 2009-07-09 | Temperature-compensated crystal oscillator |
Applications Claiming Priority (4)
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JP2003152390 | 2003-05-29 | ||
JP2003-152390 | 2003-05-29 | ||
JP2003183455 | 2003-06-26 | ||
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US11/474,565 Continuation US7242258B2 (en) | 2003-05-29 | 2006-06-26 | Temperature-compensated crystal oscillator |
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US20050040905A1 true US20050040905A1 (en) | 2005-02-24 |
Family
ID=34196568
Family Applications (3)
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US10/857,442 Abandoned US20050040905A1 (en) | 2003-05-29 | 2004-05-28 | Temperature-compensated crystal oscillator |
US11/474,565 Ceased US7242258B2 (en) | 2003-05-29 | 2006-06-26 | Temperature-compensated crystal oscillator |
US12/500,454 Active USRE44368E1 (en) | 2003-05-29 | 2009-07-09 | Temperature-compensated crystal oscillator |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
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US11/474,565 Ceased US7242258B2 (en) | 2003-05-29 | 2006-06-26 | Temperature-compensated crystal oscillator |
US12/500,454 Active USRE44368E1 (en) | 2003-05-29 | 2009-07-09 | Temperature-compensated crystal oscillator |
Country Status (3)
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US (3) | US20050040905A1 (en) |
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CN (1) | CN100466459C (en) |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6229404B1 (en) * | 1998-08-31 | 2001-05-08 | Kyocera Corporation | Crystal oscillator |
US6445254B1 (en) * | 2000-04-06 | 2002-09-03 | Nihon Dempa Kogyo Co., Ltd. | Crystal oscillator and method of bonding IC chip useful for fabricating crystal oscillator |
US6667664B2 (en) * | 2000-01-31 | 2003-12-23 | Kinseki Limited | Container for oscillation circuit using piezoelectric vibrator, manufacturing method therefor, and oscillator |
US6778029B2 (en) * | 2002-04-22 | 2004-08-17 | Nihon Dempa Kogyo Co., Ltd. | Surface-mount crystal unit |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5342111A (en) * | 1992-12-21 | 1994-08-30 | General Motors Corporation | Retractable seat |
JPH11121477A (en) * | 1997-10-21 | 1999-04-30 | Toshiba Corp | Semiconductor device and its manufacture |
JPH11186850A (en) * | 1997-12-19 | 1999-07-09 | Sii Quartz Techno:Kk | Piezoelectric oscillator |
JP3406845B2 (en) | 1998-08-31 | 2003-05-19 | 京セラ株式会社 | Surface mount type crystal oscillator |
JP3678148B2 (en) | 1998-12-02 | 2005-08-03 | セイコーエプソン株式会社 | Piezoelectric device |
JP2000278047A (en) | 1999-03-24 | 2000-10-06 | Nippon Dempa Kogyo Co Ltd | Surface mount crystal oscillator and its manufacture |
JP2000299611A (en) | 1999-04-14 | 2000-10-24 | Nippon Dempa Kogyo Co Ltd | Surface mount crystal oscillator and production thereof |
JP2000349191A (en) | 1999-06-04 | 2000-12-15 | Toshiba Corp | Semiconductor device and wiring circuit device |
JP2001291742A (en) | 2000-04-06 | 2001-10-19 | Nippon Dempa Kogyo Co Ltd | Bonding method of ic chip and quartz oscillator using this bonding method |
JP3645810B2 (en) * | 2000-12-27 | 2005-05-11 | 京セラ株式会社 | Electronic component equipment |
JP2002198740A (en) | 2000-12-27 | 2002-07-12 | Nippon Dempa Kogyo Co Ltd | Surface mount crystal oscillator |
JP2002329839A (en) * | 2001-02-27 | 2002-11-15 | Toyo Commun Equip Co Ltd | Surface mount electronic component and its manufacturing method, and sheet-like base material |
JP2003124745A (en) | 2001-10-11 | 2003-04-25 | Toyo Commun Equip Co Ltd | Structure and production method for electronic component |
JP2003133857A (en) * | 2001-10-22 | 2003-05-09 | Citizen Watch Co Ltd | Oscillator |
JP2004228894A (en) * | 2003-01-22 | 2004-08-12 | Tokyo Denpa Co Ltd | Piezoelectric oscillator and its manufacturing method |
-
2004
- 2004-05-28 US US10/857,442 patent/US20050040905A1/en not_active Abandoned
- 2004-05-31 CN CNB2004100714027A patent/CN100466459C/en active Active
-
2006
- 2006-06-26 US US11/474,565 patent/US7242258B2/en not_active Ceased
-
2008
- 2008-04-03 JP JP2008097161A patent/JP2008182767A/en active Pending
-
2009
- 2009-07-09 US US12/500,454 patent/USRE44368E1/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6229404B1 (en) * | 1998-08-31 | 2001-05-08 | Kyocera Corporation | Crystal oscillator |
US6667664B2 (en) * | 2000-01-31 | 2003-12-23 | Kinseki Limited | Container for oscillation circuit using piezoelectric vibrator, manufacturing method therefor, and oscillator |
US6445254B1 (en) * | 2000-04-06 | 2002-09-03 | Nihon Dempa Kogyo Co., Ltd. | Crystal oscillator and method of bonding IC chip useful for fabricating crystal oscillator |
US6778029B2 (en) * | 2002-04-22 | 2004-08-17 | Nihon Dempa Kogyo Co., Ltd. | Surface-mount crystal unit |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
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US20090139759A1 (en) * | 2004-12-20 | 2009-06-04 | Murata Manufacturing Co., Ltd. | Laminated ceramic electronic component and manufacturing method therefor |
WO2009029226A1 (en) * | 2007-08-24 | 2009-03-05 | Cts Corporation | Ovenized oscillator |
US7821346B2 (en) * | 2007-08-24 | 2010-10-26 | Cts Corporation | Ovenized oscillator |
US20090051446A1 (en) * | 2007-08-24 | 2009-02-26 | Mccracken Jeffrey A | Ovenized oscillator |
US20130257549A1 (en) * | 2012-03-29 | 2013-10-03 | Nihon Dempa Kogyo Co., Ltd. | Crystal controlled oscillator |
US9041476B2 (en) * | 2012-03-29 | 2015-05-26 | Nihon Dempa Kogyo Co., Ltd. | Crystal controlled oscillator |
US9503099B2 (en) * | 2013-11-07 | 2016-11-22 | Kyocera Crystal Device Corporation | Temperature compensated crystal oscillator |
US20170155420A1 (en) * | 2014-05-12 | 2017-06-01 | Rohm Co., Ltd. | Wireless communications module |
US10587301B2 (en) * | 2014-05-12 | 2020-03-10 | Rohm Co., Ltd. | Wireless communications module |
USD767571S1 (en) | 2014-09-16 | 2016-09-27 | Daishinku Corporation | Piezoelectric vibration device |
USD760230S1 (en) * | 2014-09-16 | 2016-06-28 | Daishinku Corporation | Piezoelectric vibration device |
US20180191299A1 (en) * | 2015-07-27 | 2018-07-05 | Guangdong DAPU Telecom Technology Co., Ltd. | Directly-heating oven controlled crystal oscillator |
US10855289B2 (en) * | 2016-03-15 | 2020-12-01 | Txc Corporation | Oven controlled crystal oscillator |
US11470722B2 (en) * | 2017-10-11 | 2022-10-11 | Riken | Current introduction terminal, and pressure holding apparatus and X-ray image sensing apparatus therewith |
Also Published As
Publication number | Publication date |
---|---|
JP2008182767A (en) | 2008-08-07 |
US20060238264A1 (en) | 2006-10-26 |
CN100466459C (en) | 2009-03-04 |
USRE44368E1 (en) | 2013-07-16 |
US7242258B2 (en) | 2007-07-10 |
CN1574608A (en) | 2005-02-02 |
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