JP2008072762A - Temperature-compensated crystal oscillator - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a temperature-compensated crystal oscillator that is satisfactory in bonding stability of an IC chip, and capable of coping with size reduction in the overall structure. <P>SOLUTION: The temperature-compensated crystal oscillator is mounted with the IC chip 7 for controlling the oscillation output, based on vibration of a crystal oscillator 5. In the mounting region of the IC chip 7, a plurality of electrode pads 10 are disposed as an (m×n) matrix (m, n are integers equal to or larger than 2), and the IC chip 7 is electrically connected to the electrode pads 10. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a temperature compensated crystal oscillator used in electronic equipment such as portable communication equipment.

  Conventionally, a temperature-compensated crystal oscillator has been used in electronic equipment such as portable communication equipment.

  As such a conventional temperature-compensated crystal oscillator, for example, as shown in FIG. 21, a crystal resonator element 24 is accommodated in the upper surface of a flat substrate 21 having a plurality of external terminals 22 attached to the lower surface. In addition, the container body 23 to which the frame-like base body 27 attached to the lower surface side is attached is joined, and the quartz crystal resonator element is surrounded by the cavity portion 25 surrounded by the inner wall surface of the frame-like base body 27 and the lower surface of the container body 23. There is known a structure in which an IC element 26 that controls oscillation output based on the vibration of 24 is provided and these IC elements 26 are mounted on the lower surface of the container body 23 (see, for example, Patent Document 1).

  The container body 23 is for hermetically sealing the quartz vibrating element accommodated in the container from the atmosphere, and a sealing ring is provided on the upper surface of the substrate made of an electrically insulating material. Each crystal resonator element is attached to the inside of the ring, and a metal lid is joined to the upper surface of the seal ring by seam welding (resistance welding) or the like to hermetically seal the space in which the crystal resonator element is accommodated is doing.

  In addition, the substrate of the container body 23 and the frame-shaped base body 21 described above are usually integrally formed of a ceramic material such as glass-ceramic, and wiring conductors are formed inside and on the surface thereof. It was manufactured by adopting a known ceramic green sheet lamination method.

Further, in the mounting region of the IC element 26, as shown in FIG. 22, for example, a plurality of electrode pads 28 connected to each electrode of the IC element 26 are described in, for example, JP-A-2001-291742. For example, in two rows, five electrode pads are arranged in one row, and six electrode pads are arranged in the other row. Note that a rectangular solid line in FIG. 22 indicates a mounting region of the IC element 26.
JP 2000-278047 A Japanese Patent Laid-Open No. 2001-291742 (FIGS. 1, 3, and 4)

  As the IC element 26, a flip chip type IC element 26 having a plurality of connection pads is used. When the flip chip type IC element 26 is mounted on the lower surface of the mounting base 23, the IC element 26 is used. The electrode pad 28 in the mounting region is brought into contact with the electrode pad corresponding to the connection pad via a conductive bonding member such as solder, and then the conductive bonding member such as solder is heated and melted at a high temperature to cause the IC. The element 26 is electrically and mechanically connected to the mounting base 23.

  However, in the above-described temperature compensated crystal oscillator, the planar shape is reduced to 7 mm × 5 mm, 5 mm × 3 mm, and further 3 mm × 2 mm, and accordingly, the IC element 26 is strongly required to be reduced in size. As a result, the mounting area of the IC element 26 is reduced, the interval between the electrode pads 28 must be reduced, the bonding reliability is lowered, and the free wiring conductor 29 connected to the electrode pad 28 is free. There was a problem that the degree was restricted.

  Further, in the temperature compensated crystal oscillator, in order to flatten the oscillation output by the oscillation control of the IC element 27 in accordance with the intrinsic temperature characteristic of the crystal vibration element 24, the crystal vibration element 24 is mounted in advance before the IC element 26 is mounted. It is necessary to measure the specific temperature characteristics of the. It is difficult to perform this measurement due to the miniaturization of the electrode pad, and the productivity is greatly reduced.

  The present invention has been devised in view of the above-described problems, and an object of the present invention is to provide a temperature compensated crystal oscillator capable of maintaining and improving the junction reliability of an IC element and miniaturizing the entire oscillator. It is in.

  A temperature-compensated crystal oscillator according to the present invention is a temperature-compensated crystal oscillator having a crystal resonator element and an IC element that controls an oscillation output based on temperature compensation data for compensating temperature characteristics of the crystal resonator element, The IC elements are mounted on a mounting substrate, and a plurality of electrode pads are arranged in a matrix of m rows × n columns (m and n are natural numbers of 2 or more) in the IC element mounting region of the mounting substrate. A plurality of connection pads provided on one main surface of the IC element are electrically connected to the corresponding electrode pads.

  In addition, at least one of the plurality of electrode pads arranged in the IC element mounting region of the mounting substrate is a dummy electrode pad bonded to the connection pad of the IC element.

  The plurality of electrode pads are arranged in a straight line at regular intervals in the row direction and the column direction, and are arranged so that all the rows and all the columns are orthogonal to each other.

  The mounting substrate is formed by laminating at least two insulating layers, and a wiring conductor connected to a via-hole conductor disposed immediately below or directly above the electrode pad is interposed between the two insulating layers.

  Further, both m and n are 3 or more, and the electrode pads connected to the wiring conductors via the via-hole conductors are arranged so as to surround other electrode pads.

  Further, the IC element is formed by disposing a rewiring layer on one main surface of the semiconductor element so that each connection pad of the IC element corresponds to each electrode pad forming position.

  The crystal resonator is housed in a container body bonded to the mounting substrate. The mounting substrate has a flat plate shape, and the lower surface of the container body is at least the height of the IC element. A spacer portion having a thickness of 1 mm is provided.

  A cavity for accommodating an IC element is formed on the upper surface of the mounting substrate, and the upper surface around the cavity opening of the mounting substrate and the lower surface of the container body are joined.

  The mounting substrate has a cavity in which an IC element is accommodated, and the mounting substrate is bonded to the lower surface of the container body with the opening peripheral surface of the cavity as a lower surface.

  The connection pads are formed larger than the corresponding electrode pads.

  Surface mounting external terminals are provided on the lower surface of the mounting substrate, and the plurality of electrode pads include a plurality of crystal electrode pads electrically connected to the crystal resonator element, and the surface mounting external terminals. It includes an oscillation output electrode pad, a ground electrode pad, a power supply voltage pad, and a plurality of write control electrode pads that are electrically connected.

The temperature-compensated crystal oscillator according to the present invention forms a cavity opened on the upper surface of the mounting substrate, and oscillates at a predetermined frequency based on the crystal oscillation element and temperature compensation data for compensating the temperature characteristics of the crystal oscillation element in the cavity. An IC element for controlling output is accommodated, and the lower surface of the mounting substrate is a mounting surface,
In the IC element mounting area on the bottom surface of the cavity, a pair of crystal electrode pads, oscillation output electrode pads, ground electrode pads, power supply voltage electrode pads, and write electrode pads for writing temperature compensation data are connected to the crystal resonator elements. The plurality of electrode pads are arranged in a matrix of m rows × n columns (m and n are natural numbers of 2 or more), and the plurality of connection pads provided on the lower surface of the IC element are electrically connected to the corresponding electrode pads. It is characterized by having been connected.

  In addition, at least one of the plurality of electrode pads arranged in the IC element mounting region on the bottom surface of the cavity is a dummy electrode pad bonded to the connection pad of the IC element.

  The plurality of electrode pads are arranged in a straight line at regular intervals in the row direction and the column direction, and are arranged so that all the rows and all the columns are orthogonal to each other.

  The mounting substrate is formed by laminating at least two insulating layers, and a wiring conductor connected to a via-hole conductor disposed immediately below or directly above the electrode pad is interposed between the two insulating layers.

  Further, both m and n are 3 or more, and the electrode pads connected to the wiring conductors via the via-hole conductors are arranged so as to surround other electrode pads.

  Further, the IC element is formed by disposing a rewiring layer on one main surface of the semiconductor element so that each connection pad of the IC element corresponds to each electrode pad forming position.

  According to the temperature compensated crystal oscillator of the present invention, at least a plurality of, for example, two crystal electrode pads connected to the crystal resonator element, an oscillation output electrode pad connected to the external terminal for surface mounting, and a ground are provided on the lower surface region of the container body. An electrode pad, a power supply voltage electrode pad, an oscillation control electrode pad, and at least two write control electrode pads are arranged. That is, at least eight electrode pads are formed, and they are formed vertically and horizontally, that is, in a matrix (matrix) of m rows × n columns (m and n are natural numbers of 2 or more). The connection pads of the IC element are electrically connected corresponding to the electrode pads. Therefore, the electrode pads are arranged so as to be evenly distributed in a matrix such as 3 rows and 3 columns and 3 rows and 4 columns.

  As a result, the electrode pads can be formed using substantially the entire mounting area of the IC element, so that even if the IC element is downsized, the occupation rate of the electrode pad in the IC element mounting area can be increased, and the container body is wasted. Space and dead space in the IC chip mounting area can be prevented, and the temperature compensated crystal oscillator can be greatly reduced in size.

  In addition, when the IC element is pole-bonded to the electrode pad via the conductive bonding member, the bonding portion can be dispersed over substantially the entire lower surface of the IC element, so that the IC element can be stably bonded.

  In an IC element corresponding to such an electrode pad, a laminated wiring board (rewiring layer) is integrally provided on the mounting surface of the semiconductor element, and the laminated wiring board (rewiring layer) is protected by a resin such as epoxy. A connection pad is formed on the mounting surface of the multilayer wiring board so as to correspond to the arrangement of the electrode pads. By using such an IC element, the IC element can be mounted and electrically connected to the above electrode pad very easily.

  Further, at least one of a plurality of electrode pads arranged in a matrix of m rows × n columns (m and n are natural numbers of 2 or more) in the mounting area of the IC element of the container body is a connection pad of the IC element. It is a dummy electrode pad to be connected. For example, as described above, by providing one dummy electrode pad that requires a minimum number of eight electrode pads, the electrode pads can be arranged in a 3 × 3 regular matrix. As a result, the dummy electrode improves the bonding strength of the IC element by making it correspond to the connection pad where the IC element does not function at all, and the underfill for improving the bonding strength of the widely used IC element in the past. It is also possible to dispense with resin.

  The plurality of electrode pads are arranged in a straight line at regular intervals in the row direction and the column direction, and are arranged so that all the rows and all the columns are orthogonal to each other. As a result, there is no bias at the junction points of the IC elements, the junction reliability of the IC elements is improved, and the design of the rewiring layer of the IC elements becomes very simple.

  The mounting substrate is formed by laminating at least two insulating layers, and a wiring conductor connected to a via-hole conductor disposed immediately below or directly above the electrode pad is interposed between the two insulating layers. That is, since the wiring conductor routed from the electrode pad to the surface of the mounting substrate can be eliminated, it is possible to prevent a short circuit due to foreign matter adhering to the exposed wiring conductor, and the flow of the conductive bonding member from the electrode pad region. Can prevent dashi. As a result, highly reliable IC elements can be bonded.

  Further, both m and n are 3 or more, and the electrode pads connected to the wiring conductors via the via-hole conductors are arranged so as to surround other electrode pads. As a result, it is not necessary to form a wiring conductor from the electrode pad located in the inner region to the surface of the mounting substrate among the electrode pads arranged in a matrix, thereby preventing a short circuit between the electrode pads. it can. Here, the electrode pad arranged so as to be surrounded refers to an electrode pad having three or four electrode pads adjacent in the row and column directions.

  The mounting substrate has a flat plate shape, and a spacer portion having a thickness of at least the height of the IC element is provided on the lower surface of the container body.

  A cavity for accommodating an IC element is formed on the upper surface of the mounting substrate, and the upper surface around the cavity opening of the mounting substrate and the lower surface of the container body are joined.

  The mounting substrate is formed with a cavity containing an IC element, and the mounting substrate is bonded to the lower surface of the container body with the cavity opening peripheral surface of the mounting substrate as the lower surface.

  Further, according to the temperature compensated crystal oscillator of the present invention, a cavity opened in the upper surface of the mounting substrate is formed, and based on the temperature compensation data for compensating for the quartz resonator element and the temperature characteristics of the quartz resonator element in the cavity. An IC element for controlling a predetermined oscillation output is accommodated, and the lower surface of the mounting base is used as a mounting surface, and at least eight electrode pads are formed in the IC element mounting region on the bottom surface of the cavity, Moreover, this is formed in a matrix of m rows × n columns (m and n are natural numbers of 2 or more). The connection pads of the IC element are electrically connected corresponding to the electrode pads. Therefore, the electrode pads are arranged in a matrix such as 3 rows and 3 columns and 3 rows and 4 columns.

  As a result, since the electrode pads can be formed using substantially the entire mounting area of the IC element, the occupation ratio of the electrode pads in the IC mounting area can be increased even if the IC element is downsized, and the wasteful space of the container body Therefore, dead space in the IC chip mounting area can be prevented, and the temperature compensated crystal oscillator can be greatly reduced in size.

  In addition, when the IC element is pole-bonded to the electrode pad via the conductive bonding member, the bonding portion can be dispersed over substantially the entire lower surface of the IC element, so that the IC element can be stably bonded.

  An IC element corresponding to such an electrode pad has a structure in which a laminated wiring board (rewiring layer) is disposed on a mounting surface of a semiconductor element, and the laminated wiring board (rewiring layer) is protected by a resin such as epoxy. The connection pads are formed on the mounting surface of the multilayer wiring board so as to correspond to the arrangement of the electrode pads. By using such an IC element, the IC element can be mounted and electrically connected to the above electrode pad very easily.

  A plurality of electrode pads arranged in a matrix of m rows × n columns (m and n are natural numbers of 2 or more) in the IC element mounting region on the bottom surface of the cavity of the mounting substrate are dummy electrode pads connected to the IC elements. Is included. For example, as described above, by providing one dummy electrode pad that requires a minimum number of eight electrode pads, the electrode pads can be arranged in a 3 × 3 regular matrix. As a result, the dummy electrode improves the bonding strength of the IC element by making it correspond to the connection pad where the IC element does not function at all, and the underfill for improving the bonding strength of the widely used IC element in the past. It is possible to eliminate the need for a resin, and it is possible to appropriately prevent the adverse effect of the outer gas generated by using this underfill resin on the crystal resonator element.

  The plurality of electrode pads are arranged in a straight line at regular intervals in the row direction and the column direction, and are arranged so that all the rows and all the columns are orthogonal to each other. As a result, there is no bias at the junction points of the IC elements, the junction reliability of the IC elements is improved, and the design of the rewiring layer of the IC elements becomes very simple.

  The mounting substrate is formed by laminating at least two insulating layers, and a wiring conductor connected to a via-hole conductor disposed immediately below or directly above the electrode pad is interposed between the two insulating layers. That is, since the wiring conductor routed from the electrode pad to the surface of the mounting substrate can be eliminated, it is possible to prevent a short circuit due to foreign matter adhering to the exposed wiring conductor, and the flow of the conductive bonding member from the electrode pad region. Can prevent dashi. As a result, highly reliable IC elements can be bonded.

  Further, both m and n are 3 or more, and the electrode pads connected to the wiring conductors via the via-hole conductors are arranged so as to surround other electrode pads. As a result, it is not necessary to form a wiring conductor from the electrode pad located in the inner region to the surface of the mounting substrate among the electrode pads arranged in a matrix, thereby preventing a short circuit between the electrode pads. it can. Here, the electrode pad arranged so as to be surrounded refers to an electrode pad having three or four electrode pads adjacent in the row and column directions.

  Accordingly, in the present invention, even if the IC element is miniaturized in response to the miniaturization of the temperature compensated crystal oscillator, it can greatly contribute to the miniaturization of the entire oscillator while maintaining and improving the junction reliability of the IC element. .

  Hereinafter, a temperature compensated crystal oscillator corresponding to claim 1 of the present invention will be described in detail with reference to the accompanying drawings.

  FIG. 1 is a perspective view of a temperature compensated crystal oscillator according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view of the temperature compensated crystal oscillator of FIG.

  The temperature-compensated crystal oscillator shown in these drawings has a structure in which a flat mounting base 6 having an IC element 7 attached is bonded to the lower surface of a container body 1 in which a crystal resonator element 5 is accommodated. ing.

  The container body 1 is made of, for example, a laminated substrate 2 made of a ceramic material such as glass-ceramic or alumina ceramic, a seal ring 3 made of a metal such as 42 alloy, Kovar, or phosphor bronze, and a metal similar to the seal ring 3. The container body 1 is constructed by attaching the seal ring 3 to the upper surface of the laminated substrate 2 and placing and fixing the cover body 4 on the upper surface of the laminated substrate 2. A crystal resonator element 5 is mounted on the upper surface of the laminated substrate 2 positioned.

  The container body 1 has a space surrounded by the upper surface of the multilayer substrate 2, the inner surface of the seal ring 3, and the lower surface of the lid body 4, and the crystal resonator element 5 is accommodated in the space and hermetically sealed. . On the upper surface of the multilayer substrate 2, a pair of mounting pads 8a and 8b (8b does not appear in the figure) connected to the vibration electrode of the crystal vibration element 5 are formed.

  Further, as shown in FIG. 2, the laminated substrate 2 has legs 2c and 2d on the lower surface side. The leg portions 2c and 2d are formed of the same material as that of the laminated substrate 2, and a plurality of container body side bonding electrodes 13 are formed on the lower surfaces of the leg portions 2c and 2d.

  The laminated substrate 2 including the leg portions 2c and 2d includes a first via hole conductor 9a, a fifth via hole conductor 9f, and a wiring conductor 9b.

  When the laminated substrate 2 of the container body 1 is made of a ceramic material such as glass-ceramic, for example, it is mounted on the surface of a ceramic green sheet obtained by adding and mixing an appropriate organic solvent to the ceramic material powder. A conductor paste that becomes the pads 8a and 8b and the wiring conductor 9b is printed and applied in a predetermined pattern, and the conductors that become the first via-hole conductor 9a and the fifth via-hole conductor 9f are formed. After molding, it is manufactured by firing at a high temperature.

  The seal ring 3 and the lid 4 of the container body 1 are manufactured by forming a metal such as 42 alloy into a predetermined shape using a conventionally well-known metal processing method, and the obtained seal ring 3 is used as the laminated substrate 2. Then, the crystal resonator element 5 is brazed to a conductor layer previously deposited on the upper surface of the substrate, and then the crystal resonator element 5 is mounted and fixed on the upper surface of the multilayer substrate 2 by using the conductive bonding member 16. After performing the frequency adjustment, the container body 1 is assembled by joining the above-described lid body 4 to the upper surface of the seal ring 3 by a conventionally known resistance welding or the like in a predetermined atmosphere. Thus, the seal ring 3 and the lid body 4 are assembled. Are bonded by resistance welding in advance, a Ni plating layer, an Au plating layer, or the like is applied to the surfaces of the seal ring 3 and the lid 4 in advance.

  The crystal resonator element 5 accommodated in the container body 1 is formed by attaching and forming a pair of vibration electrodes on both main surfaces of a crystal piece cut along a predetermined crystal axis, and vibrates at a predetermined frequency. Wake up. The quartz resonator element 5 has a laminated substrate by electrically connecting a pair of vibrating electrodes to mounting pads 8a and 8b (indicated by 8 in the drawing) on the upper surface of the laminated substrate 2 via a conductive bonding member 16. The quartz resonator element 5 and the container body 1 are electrically connected and mechanically connected at the same time.

  Here, if the metal lid 4 of the container body 1 is connected to the external terminal 14 for the ground terminal described later via each electrode of the laminated substrate 2 of the container body 1, the mounting base 6 and the wiring conductor, In use, the lid 4 is grounded to provide a shielding function, and the crystal resonator element 5 and an IC element 7 to be described later can be protected from unnecessary electromagnetic noise.

  Next, the mounting substrate 6 is formed by laminating substrates 6a and 6b made of a ceramic material such as glass-ceramic and alumina ceramic. The mounting substrate 6 includes a first via-hole conductor 9a and a first via-hole conductor 9a. 5 via-hole conductors 9f and wiring conductors 9b, a fourth via-hole conductor 9e, a second via-hole conductor 9c, a third via-hole conductor 9d, and a wiring conductor 9b.

  When the mounting substrate 6 is formed of a ceramic material such as glass-ceramic, for example, the surface of the ceramic green sheet obtained by adding and mixing an appropriate organic solvent to the ceramic material powder is used as the wiring conductor 9b. After the conductor paste is printed and applied in a predetermined pattern, conductors to be the fourth via-hole conductor 9e, the second via-hole conductor 9c, and the third via-hole conductor 9d are formed, and a plurality of these are laminated and press-molded It is manufactured by firing at a high temperature.

  A plurality of electrode pads 10 connected to the connection pads 11 of the IC element 7 disposed between the leg portions 2 c and 2 d of the container body 1 are formed in the center of the upper surface of the mounting substrate 6. That is, the leg portions 2c and 2d function as spacers for ensuring a space for mounting the IC element 7 between the bottom surface of the concave portion of the container body 1 formed thereby and the upper surface of the mounting base 6. .

  As shown in FIG. 3A, the region 2 on the upper surface of the mounting substrate 6 is connected to a connection pad 11 of the IC element 7 via a conductive bonding member 17 such as solder. Crystal electrode pads 10d and 10f, oscillation output electrode pad 10a, ground electrode pad 10h, power supply voltage electrode pad 10c, oscillation control electrode pad 10i and at least two write control electrode pads 10b, 10e and 10g (as a whole) Are arranged in a matrix of 3 rows and 3 examples, for example. When the connection pad 11 of the IC element 7 and each electrode pad 10 are connected by solder bumps, the electrode shape of the connection pad 11 includes the corresponding electrode pad 10, that is, slightly larger. It is desirable to form it. In this way, even if a solder ball is formed on the connection pad 11, there is no drop of the ball, and even if the IC element is slightly displaced, a short circuit with the adjacent conductive bonding member 17 can be avoided.

  Here, in the plurality of electrode pads 10 arranged vertically and horizontally, that is, in a matrix of m rows × n columns (m and n are natural numbers of 2 or more), the electrode pads 10 arranged in each row or column are: Instead of the regular matrix arrangement shown in FIG. 3A, the arrangement shown in FIGS. 3B and 3C may be used. That is, when two or more electrode pads 10 are arranged in a straight line, it is regarded as one row or one column. For example, when a plurality of electrode pads 10 are arranged in the mounting region of the IC element 7 as shown in FIG. 3B, each electrode pad 10 is arranged in a 3 × 2 matrix. In the case shown in FIG. 3C, the arrangement of the electrode pads 10 is a 3 × 4 matrix.

  As described above, when eight electrode pads are required for the operation of the temperature compensated crystal oscillation, one dummy electrode pad is provided to arrange the entire electrode pads in a 3 × 3 matrix. Further, when the total number of electrode pads increases due to the increase in the write control electrode pads 10, the dummy electrode pads are arranged in a 3 × 4 matrix, a 4 × 4 matrix, Arranged in a 4 × 5 matrix.

  Further, as shown in FIG. 4, the mounting base 6 has a wiring conductor 9b, a fourth via-hole conductor 9e connected to the wiring conductor 9b and extending below the mounting base 6, and the wiring conductor 9b. A second via-hole conductor 9c and a third via-hole conductor 9d are formed extending upward from the bottom. The wiring conductor 9b and the first to third via-hole conductors 9a, 9c, 9d are formed by a normal method for manufacturing the mounting substrate 6.

  On the other hand, inside the multilayer substrate 2, a wiring conductor 9b, a first via-hole conductor 9a connected to the wiring conductor 9b and extending upward from the multilayer substrate 2, and a fifth via-hole conductor extending downward from the wiring conductor 9b 9f is formed. The wiring conductor 9b and the fourth to fifth via-hole conductors 9e and 9f are formed by a normal method for manufacturing the multilayer substrate 2.

  The fourth via-hole conductor 9e connects the external terminal 14 and the predetermined wiring conductor 9b.

  The fifth via-hole conductor 9f connects the container-body-side bonding electrode 13 on the lower surface of the multilayer substrate 2 and the predetermined wiring conductor 9b.

  Here, the first via-hole conductor 9a connects the mounting pad 8 to which the crystal resonator element 5 located on the upper surface of the multilayer substrate 2 is connected and the predetermined wiring conductor 9b. Similarly, the wiring conductor 9 having the ground potential is connected to the seal ring 3.

  The second via-hole conductor 9c is connected to each electrode pad 10 on the upper surface of the mounting substrate 6 and the predetermined wiring conductor 9b.

  The third via-hole conductor 9d is connected to the mounting substrate-side bonding electrode 12 on the upper surface of the mounting substrate 6 and the predetermined wiring conductor 9b.

  Accordingly, as shown in the exploded view of FIG. 7, the crystal electrode pads 10d and 10f are connected to the second via-hole conductor 9c, the wiring conductor 9b, the third via-hole conductor 9d, the mounting substrate-side bonding electrode 12, and the container body-side bonding electrode 13. The crystal resonator element 5 is connected to the mounting pad 8 through the fifth via-hole conductor 9f, the wiring conductor 9b, and the first via-hole conductor 9a. Further, it is connected to the mounting substrate side bonding electrode 12 through the second via hole conductor 9c, the wiring conductor 9b, and the third via hole conductor 9d.

  The oscillation output electrode pad 10a is connected to the mounting substrate side bonding electrode 12 via the second via hole conductor 9c, the wiring conductor 9b, and the third via hole conductor 9d as shown on the right side of the exploded view of FIG. ing.

  The ground electrode pad 10h is connected to the mounting substrate side bonding electrode 12 through the second via hole conductor 9c, the wiring conductor 9b, and the third via hole conductor 9d as shown on the left side of the exploded view of FIG. At the same time, the mounting substrate-side bonding electrode 12 is connected to the seal ring 3 via the container body-side bonding electrode 13, the fifth via-hole conductor 9f, and the first via-hole conductor 9a.

  Similarly to the oscillation output electrode pad 10a, the power supply voltage electrode pad 10c and the oscillation control electrode pad 10i are mounted via the second via hole conductor 9c, the wiring conductor 9b, and the third via hole conductor 9d. 12 is connected.

  Further, the write control electrode pads 10b, 10e, and 10g are connected to the mounting substrate side bonding electrode 12 through the second via hole conductor 9c, the wiring conductor 9b, and the third via hole conductor 9d.

  Further, as shown in the bottom view of FIG. 5, the mounting base 6 has a plurality of mounting bases that are electrically and / or mechanically connected to the corresponding container body side joining electrodes 13 on the bottom surface of the container body 1 on the top surface. A substrate-side bonding electrode 12 (shown by a dotted line in the drawing) is formed. Further, four external terminals 14a to 14d (an oscillation output terminal 14a, a ground terminal 14b, a power supply voltage terminal 14c, and an oscillation control terminal 14d) are provided on the lower surface of the mounting base 6 at the four corners of the lower surface of the mounting base 6, respectively. The bonding electrode 12 and the external terminal 14 are electrically connected via a conductor film or the like formed at the corner of the mounting substrate 6. Further, when the external terminal 14 and the bonding electrode 12 overlap in the thickness direction, they may be connected by the via-hole conductor 9.

  Here, the container body-side bonding electrode 13 on the lower surface of the container body 1 and the mounting substrate-side bonding electrode 12 on the upper surface of the mounting substrate 6 correspond to each other one by one, and the conductive bonding member 18 is interposed therebetween. Be joined. In the present embodiment, five mounting substrate side bonding electrodes 12 are formed on one side of the mounting substrate 6. Of these ten mounting substrate side bonding electrodes 12 in total, those extending through the corresponding ten container body side bonding electrodes 13 of the container body 1 are the crystal electrode pads 10d and 10f and the writing electrode pads 10b, 10e and 10g. Only the mounting substrate-side bonding electrode 12 connected to is connected, and the ground electrode pad 10h, the power supply voltage electrode pad 10c, the oscillation control electrode pad 10i, and the oscillation output electrode pad 10a are not connected to the mounting substrate-side bonding electrode 12. The ground electrode pad 10h, the power supply voltage electrode pad 10c, the oscillation control electrode pad 10i, and the oscillation output electrode pad 10a do not pass through the mounting substrate side bonding electrode 12, and the second via-hole conductor 9c, the wiring conductor 9b, and the second 4 is electrically connected to the external terminal 14 via the via-hole conductor 9e.

  The container-side bonding electrode 13 connected to the crystal electrode pad (the crystal resonator element 5) is used as a measurement pad for measuring the vibration characteristics of the crystal resonator element 5 in a hermetically sealed state. Further, as the measurement pads, the crystal electrode pads 10d and 10f before the IC element 7 is mounted can be formed large and used for measurement.

  Further, the container body side joining electrode 13 connected to the writing control electrode pad is connected to a writing terminal for writing temperature compensation data in a temperature compensating circuit provided on the side surface of the oscillator. For example, as shown in FIG. 9, a part of the container body side joining electrode 13 is exposed in the recessed portion 1a by using a dent in the joined portion between the leg portions 2c, 2d of the container body 1 and the mounting base 6. The probe needle of the data writing device is applied to these write terminals, and the temperature compensation data corresponding to the temperature characteristics of the crystal resonator element 5 is written in the memory provided in the temperature compensation circuit of the IC element 7. Can do. This path is connected from the container body side bonding electrode 13 or the mounting substrate side bonding electrode 12 through the third via hole conductor 9d, the wiring conductor 9b, and the second via hole conductor 9c. Further, such a writing terminal is arranged in an external discarding portion provided integrally with the leg portions 2c, 2d, etc. of the container body 1, and after the temperature compensation data has been written, this discarding terminal is disposed. The portion may be separated from the leg portions 2c, 2d, etc. of the container body 1.

  The four external terminals 14 described above electrically connect the temperature-compensated crystal oscillator to predetermined circuit wiring on the motherboard. If the ground external terminal 14b and the oscillation output external terminal 14a among the external terminals 14 are arranged away from the power supply voltage external terminal 14c and the oscillation control external terminal 14d, it is possible to effectively interfere with noise on the oscillation output. Can be prevented.

  As shown in FIGS. 6A and 6B, the IC element 7 connected to each electrode pad 10 of the mounting base 6 has each connection pad of the IC element 7 on one main surface of the semiconductor element 7a. A rectangular flip chip type IC is used in which a rewiring layer 7b is provided to correspond to each electrode pad formation position. The semiconductor element 7a includes a temperature-sensitive element that detects an ambient temperature state, a storage element in which temperature compensation data for compensating temperature characteristics of the crystal resonator element 5 is written, and predetermined temperature compensation data corresponding to the ambient temperature. A temperature compensation circuit that corrects the vibration characteristics of the crystal resonator element 5 and an oscillation circuit that is connected to the temperature compensation circuit and generates a predetermined oscillation output are provided.

  An internal connection electrode 7c is formed on the mounting surface side of the semiconductor element 7a. The arrangement of the internal connection electrodes 7c has no regularity because it is formed avoiding each element and each circuit formation region integrated in the semiconductor element 7a.

  Therefore, a rewiring layer 7b having a plurality of insulating layers 7d, a predetermined wiring layer (including via-hole conductors in the thickness direction of the insulating layer) 7e, and connection pads 11 is formed on the mounting surface of the semiconductor element 7a. Thereby, on the mounting surface of the rewiring layer 7b, the connection pads 11 are formed by converting the internal connection electrodes 7c formed without any rules into a matrix so as to correspond to the positions where the electrode pads 10 are formed. In addition, these connection pads 11 are formed to be uniformly dispersed on the mounting surface, and when joined to the electrode pads 10, the joint portions can be evenly dispersed to improve the joint strength. it can.

  In order to improve the bonding strength between the IC element 7 and the electrode pad 10, a dummy connection pad that is not connected to the internal connection electrode 7c may be formed as the connection pad 11.

  In such an IC element 7, a plurality of connection pads 11 provided on the lower surface thereof are electrically connected to corresponding electrode pads 10 on the upper surface of the mounting substrate 6 through a conductive bonding member 17 such as solder or gold bump. By doing so, it is attached to the upper surface of the mounting substrate 6. As a result, predetermined elements and circuits in the IC element 7 are electrically connected to the quartz resonator element 5 and the external terminals 14 on the lower surface of the mounting base 6 via the second via-hole conductor 9c, the wiring conductor 9b, and the like.

  As described above, according to the temperature compensated crystal oscillator of the present invention, the crystal electrode pads 10d and 10f, the oscillation output electrode pad 10a connected to the external terminals 14a, 14b, 14c, and 14d, the ground electrode pad 10h, and the power supply voltage electrode pad 10c, an oscillation control electrode pad 10i and at least two write control electrode pads 10b, 10e, and 10g are formed in rows and columns in the vertical and horizontal directions, respectively. The connection pads 11 of the IC element 7 are formed corresponding to the electrode pads 10 and are electrically connected. Therefore, the electrode pads 10 are arranged so as to be evenly distributed in a matrix over the entire mounting area of the IC elements 7.

  Thereby, even if the IC element 7 is reduced in size, the electrode pad 10 can be efficiently formed in the mounting region of the IC element 7 and the occupation ratio can be increased. That is, the dead space in the IC element 7 mounting area, which is a useless space of the mounting substrate 6, can be reduced, which can greatly contribute to the downsizing of the temperature compensated crystal oscillator.

  In addition, when the IC element 7 is pole-bonded to the electrode pad 10 via the conductive bonding member 17, this bonded portion can be uniformly dispersed in the mounting region of the IC element 7, so that the IC element 7 is stable. Joining is possible.

  The IC element 7 has a structure in which a rewiring layer 7b is provided on one main surface of the semiconductor element 7a so that each connection pad of the IC element 7 corresponds to each electrode pad formation position. It can be easily and reliably electrically connected to the electrode pad 10.

  Further, a dummy electrode pad connected to the IC element 7 may be formed on the electrode pad 10. For example, the electrode pads can be arranged in a 3 × 3 regular matrix by providing one dummy electrode pad, for example, which requires a minimum number of eight electrode pads. As a result, the dummy electrode is made to correspond to the connection pad 11 that does not function at all of the IC element 7, thereby improving the bonding strength of the IC element 7 and improving the bonding strength of the widely used IC element. It is also possible to dispense with fill resin.

  3A, the plurality of electrode pads 10 are arranged in a straight line at regular intervals in the row direction and the column direction, and all the rows and all the columns are orthogonal to each other. Is arranged. As a result, the junction points of the IC elements 7 are not biased, the junction reliability of the IC elements 7 is improved, and the design of the rewiring layer 7b of the IC elements 7 becomes very simple.

  Further, since the second via-hole conductor 9c inside the mounting base 6 is connected to the electrode pad 10 as it is, the number of wiring conductors routed from the electrode pad 10 to the upper surface of the mounting base 6 can be reduced. It is possible to reduce the occurrence of a short circuit due to adhesion of foreign matter to the conductor and to improve the design flexibility of the lead wiring conductor. Note that it is not necessary to connect all the electrode pads with the second via-hole conductor 9c. This is in consideration of the strength of the mounting substrate 6. For example, among the electrode pads 10 arranged vertically and horizontally, the electrode pads arranged on the outermost periphery, for example, the crystal electrode pads 10 d and 10 f are mounted. The upper surface of the substrate 6 may be drawn around. In this way, the shape of the quartz electrode pads 10d and 10f can be substantially increased, which is convenient as a pad for measuring the initial characteristics of the quartz vibrating element 5.

  The electrode pad 10 connected to the wiring conductor 9b via the second via-hole conductor 9c is an electrode pad 10e arranged so that another electrode pad 10 is surrounded by the electrode pad 10 arranged in a matrix. It is. Thereby, it is not necessary to form a wiring conductor from the electrode pad 10 located in the inner region to the upper surface of the mounting substrate 6, so that a short circuit between the electrode pads can be prevented.

  A mounting substrate-side bonding electrode 12 that does not conduct to the external terminal 14 is formed on the upper surface of the mounting substrate 6, and a container corresponding to the mounting substrate-side bonding electrode 12 is formed on the lower surface of the multilayer substrate 2. The body side bonding electrode 13 is formed, and the container body side bonding electrode 13 and the mounting substrate side bonding electrode 13 are bonded via the conductive bonding member 18. With these structures, the mechanical bonding strength between the container body 1 and the mounting substrate 6 can be increased because the mechanical bonding can be achieved between the container body-side bonding electrodes 13 with or without the electrical function. Can be improved.

  The oscillation output electrode pad 10a, the ground electrode pad 10h, the oscillation control pad 10i, and the power supply voltage electrode pad 10c are connected to the external terminal 14 through the wiring conductor 9b. Thereby, the arrangement of the external terminals 14 on the lower surface of the mounting substrate 6 can be optimized, which can greatly contribute to the downsizing of the temperature compensated crystal oscillator.

  Accordingly, in the present invention, in response to the miniaturization of the temperature-compensated crystal oscillator, even if the IC element 7 is miniaturized, the overall reliability of the oscillator can be reduced while maintaining and improving the junction reliability of the IC element 7. It can respond sufficiently.

  In addition, this invention is not limited to the above-mentioned embodiment, A various change, improvement, etc. are possible in the range which does not deviate from the summary of this invention.

  For example, in the embodiment described above, the lid 4 of the container body 1 is bonded to the multilayer substrate 2 via the seal ring 3. Instead of this, a metallization pattern for bonding is formed on the upper surface of the multilayer substrate 2. Alternatively, the lid 4 may be welded directly to the metallized pattern.

  Further, in the above-described embodiment, the seal ring 3 is directly attached to the upper surface of the multilayer substrate 2 of the container body 1, but instead of this, a ceramic material or the like made of the same material as the substrate 2 is disposed on the upper surface of the multilayer substrate 2. It is also possible to attach the seal ring 3 to the upper surface of the frame body after the frame body made of is integrally attached.

  Further, in the above-described embodiment, the lid body 4 is welded to the main body of the container body 1 to join the lid body 4, but instead, the lid body 4 is made of a brazing material such as Au—Sn. You may make it join to the main body of the container body 1 via this.

  Furthermore, in the above-described embodiment, the pair of legs 2c and 2d are formed to be attached to the lower surface of the container body 1, but each leg 2c and 2d is divided into two parts instead. The four legs obtained in this way are attached to the lower surface of the container body 1, or three legs obtained by dividing only one of the leg parts 2c, 2d into two are used as the container body. You may make it attach to the lower surface of 1.

  Furthermore, in the embodiment described above, only the IC element 7 is disposed in the space formed by joining the upper surface of the mounting substrate 6 and the lower surface of the container body 1. An electronic component element such as a capacitor connected between the wiring conductor of the oscillation output and the ground potential may be arranged.

  Next, another embodiment of the present invention will be described. In this embodiment, as shown in FIG. 10, a cavity for accommodating an IC element is formed on the upper surface of the mounting substrate 6, and the upper surface around the cavity opening of the mounting substrate 6 and the container body 1. The lower surface is joined. The mounting base 6 is formed by forming substantially rectangular legs 6c and 6d on stacked substrates 6a and 6b.

  Then, as shown in FIG. 3A, the mounting element 6 is disposed in a space formed between the upper surface of the mounting substrate 6 and the lower surface of the container body 1 by the legs 6c and 6d. By forming each electrode pad 10 on the upper surface, the temperature compensated crystal oscillator of the present embodiment is formed.

  Even when such a temperature-compensated crystal oscillator is configured, the same effects as those of the embodiment of FIG. 1 described above are obtained.

  Still another embodiment of the present invention will be described. In this embodiment, as shown in FIG. 11, the mounting base 6 is bonded to the lower surface of the container body 1, and a cavity for accommodating IC elements is formed on the lower surface of the mounting base 6. . The mounting base 6 is formed by forming substantially rectangular leg portions 6c and 6d on the stacked substrates 6a and 6b. The container body 1 includes the lower surface of the container body 1 and the mounting base 6. It is attached by bonding to the substrates 6a and 6b.

  Even when such a temperature-compensated crystal oscillator is configured, the same effects as those of the embodiment of FIG. 1 described above are obtained.

  Next, a temperature compensated crystal oscillator according to claim 10 of the present invention will be described in detail with reference to FIGS. The description of the same configuration as that of the temperature-compensated crystal oscillator corresponding to the first aspect will be omitted, and only the difference will be described.

  The temperature compensated crystal oscillator is configured as shown in FIGS.

  The temperature-compensated crystal oscillator 1 shown in these drawings has a structure in which a crystal resonator element 5 is bonded to the upper surface of a mounting substrate 6 having an IC element 7 attached to a cavity portion.

  The temperature-compensated crystal oscillator 1 includes, for example, a mounting base 6 in which flat substrates 6a and 6b and a frame-like base 6c made of a ceramic material such as glass-ceramic and alumina ceramic are laminated, 42 alloy, Kovar, phosphor bronze, etc. The seal ring 3 made of the above metal and the lid 4 made of the same metal as the seal ring 3 are attached to the upper surface of the mounting base 6 and the lid 4 is placed on the upper surface. The IC element 7 is mounted in the cavity of the mounting base 6 and the crystal resonator element 5 is mounted on the upper surface of the mounting base 6 so as to be positioned inside the seal ring 3. ing. A pair of mounting pads 8a and 8b (8b does not appear in the figure) connected to the vibration electrode of the crystal resonator element 5 are formed on the upper surface of the frame-shaped substrate 6c.

  Further, as shown in FIG. 14, in a region where the IC element 7 at the center of the upper surface of the flat substrate 6 b is mounted, a pair connected to the connection pad 11 of the IC element 7 via a conductive bonding member 17 such as solder. Crystal electrode pads 10d, 10f, oscillation output electrode pad 10a, ground electrode pad 10h, power supply voltage electrode pad 10c, oscillation control electrode pad 10i, and at least two write electrode pads 10b, 10e for writing temperature compensation data. 10 g (the reference numeral 10 as a whole) is arranged in a matrix of 3 rows and 3 columns, for example.

  Even when such a temperature compensated crystal oscillator is configured, the same effect as the temperature compensated crystal oscillator according to the first aspect of the present invention described above is obtained.

It is a perspective view of the temperature compensation crystal oscillator concerning one embodiment of the present invention. It is sectional drawing of the temperature compensation crystal oscillator of FIG. (A) is a plan view of the mounting substrate constituting the temperature compensated crystal oscillator of FIG. 1 as viewed from above, and (b) and (c) are other arrangements of electrode pads in the IC element mounting region of the mounting substrate. FIG. It is a top view which shows the wiring conductor and via-hole conductor inside the multilayer substrate which comprises the base | substrate for mounting. It is the top view of the see-through state which looked at the base for mounting which constitutes the temperature compensation crystal oscillator of Drawing 1 from the lower part. It is a figure which shows the IC element used for the temperature compensation crystal oscillator of FIG. 1, (a) is sectional drawing, (b) is the top view seen from the downward direction. FIG. 5 is an exploded cross-sectional view of a temperature compensated crystal oscillator according to another embodiment of the present invention, showing a connection structure of crystal electrode pads. It is another exploded sectional view of the temperature compensation crystal oscillator concerning other embodiments of the present invention, and shows the connection structure from an electrode pad to an external terminal. It is another exploded sectional view of the temperature compensation crystal oscillator concerning other embodiments of the present invention, and shows the lead-out structure of the write control electrode pad. It is a figure which shows the temperature compensation crystal oscillator which concerns on other embodiment of this invention, (a) is a perspective view, (b) is sectional drawing. It is a figure which shows the temperature compensation crystal oscillator which concerns on other embodiment of this invention, (a) is a perspective view, (b) is sectional drawing. It is a perspective view which shows the temperature compensation crystal oscillator which concerns on other embodiment of this invention. It is sectional drawing of the temperature compensation crystal oscillator of FIG. FIG. 13A is a plan view of the mounting substrate constituting the temperature-compensated crystal oscillator of FIG. 12 as viewed from above, and FIGS. 10B and 10C are other arrangements of electrode pads in the IC element mounting region of the mounting substrate. FIG. It is a top view which shows the wiring conductor and via-hole conductor inside the mounting base | substrate which comprise the temperature compensation crystal oscillator of FIG. It is the top view which looked at the temperature compensation crystal oscillator of FIG. 12 from the downward direction. It is a figure which shows the IC element used for the temperature compensation crystal oscillator of FIG. 12, (a) is sectional drawing, (b) is the top view seen from the downward direction. It is sectional drawing of the temperature compensation crystal oscillator which concerns on other embodiment of this invention, and shows the connection structure of a crystal electrode pad. It is another sectional view of the temperature compensation crystal oscillator concerning other embodiments of the present invention. It is another sectional view of the temperature compensation crystal oscillator concerning other embodiments of the present invention. It is a figure which shows the conventional temperature compensation crystal oscillator, (a) is sectional drawing, (b) is the top view seen from the downward direction. It is a top view which shows the mounting area | region of the IC element in the conventional temperature compensation crystal oscillator.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Container body 2 ... Laminate board 2c, 2d ... A pair of leg part 3 ... Seal ring 4 ... Lid body 5 ... Quartz crystal vibration element 6 ... Base for mounting 6a -Flat substrate 6b-Flat substrate 6c-Frame base 7 ... IC element 8 ... Mounting pad 9 ... Via hole conductor 9a ... First via hole conductor 9b ... Multilayer substrate Wiring conductor 9c ... 2nd via hole conductor 9d ... 3rd via hole conductor 9e ... 4th via hole conductor 9f ... 5th via hole conductor 10 ... Electrode pad 11 ... Connection pad DESCRIPTION OF SYMBOLS 12 ... Base substrate side joining electrode 13 ... Container body side joining electrode 14 ... External terminal 16 ... Conductive joining member 17 ... Conductive joining member 18 ... Conductive joining member

Claims (19)

A crystal oscillator,
An IC element for controlling an oscillation output based on temperature compensation data for compensating a temperature characteristic of the crystal oscillation element,
The IC element is mounted on a mounting substrate,
In the IC element mounting area of the mounting substrate, a plurality of electrode pads are arranged in a matrix of m rows × n columns (m and n are natural numbers of 2 or more), and provided on one main surface of the IC element. A temperature-compensated crystal oscillator, wherein a plurality of connection pads are electrically connected to the corresponding electrode pads.   2. The temperature according to claim 1, wherein at least one of the plurality of electrode pads arranged in the IC element mounting region of the mounting substrate is a dummy electrode pad bonded to the connection pad of the IC element. Compensated crystal oscillator.   2. The plurality of electrode pads are arranged in a straight line at regular intervals in a row direction and a column direction, and are arranged so that all rows and all columns are orthogonal to each other. Temperature compensated crystal oscillator.   The mounting substrate is formed by laminating at least two insulating layers, and a wiring conductor connected to a via-hole conductor disposed immediately below or directly above the electrode pad is interposed between the two insulating layers. The temperature-compensated crystal oscillator according to claim 1.   The m and n are both 3 or more, and the electrode pad connected to the wiring conductor via the via-hole conductor is disposed so that another electrode pad surrounds the electrode pad. 4. The temperature compensated crystal oscillator according to 4.   2. The temperature according to claim 1, wherein the IC element is provided with a rewiring layer for making each connection pad of the IC element correspond to each electrode pad forming position on one main surface of the semiconductor element. Compensated crystal oscillator.   The crystal resonator is housed in a container body to be bonded to the mounting substrate. The mounting substrate has a flat plate shape, and the lower surface of the container body has a thickness of at least the height of the IC element. The temperature-compensated crystal oscillator according to claim 1, wherein a spacer portion having a surface is provided.   A cavity for accommodating an IC element is formed on an upper surface of the mounting substrate, and an upper surface around the cavity opening of the mounting substrate and a lower surface of the container body are bonded to each other. The temperature-compensated crystal oscillator according to 1.   The mounting substrate has a cavity in which an IC element is accommodated, and the mounting substrate is bonded to the lower surface of the container body with an opening peripheral surface of the cavity as a lower surface. The temperature-compensated crystal oscillator according to claim 1.   2. The temperature compensated crystal oscillator according to claim 1, wherein the connection pad is formed larger than the corresponding electrode pad. Surface mounting external terminals are provided on the lower surface of the mounting substrate,
The plurality of electrode pads are a plurality of crystal electrode pads electrically connected to the crystal resonator element, an oscillation output electrode pad electrically connected to the surface mount external terminal, a ground electrode pad, a power supply voltage pad, 2. The temperature compensated crystal oscillator according to claim 1, further comprising a plurality of write control electrode pads. A cavity is formed in the upper surface of the mounting substrate, and a quartz resonator element and an IC element that controls a predetermined oscillation output based on temperature compensation data for compensating temperature characteristics of the quartz resonator element are accommodated in the cavity. A temperature compensated crystal oscillator,
In the IC element mounting region on the bottom surface of the cavity, a plurality of electrode pads are arranged in a matrix of m rows × n columns (m and n are natural numbers of 2 or more), and a plurality of electrode pads are provided on the lower surface of the IC element. A temperature-compensated crystal oscillator, wherein a connection pad is electrically connected to the corresponding electrode pad.   13. The temperature compensation according to claim 12, wherein at least one of the plurality of electrode pads arranged in the IC element mounting region on the bottom surface of the cavity is a dummy electrode pad bonded to the connection pad of the IC element. Crystal oscillator.   13. The plurality of electrode pads are arranged in a straight line at regular intervals in a row direction and a column direction, and are arranged so that all rows and all columns are orthogonal to each other. Temperature compensated crystal oscillator.   The mounting substrate is formed by laminating at least two insulating layers, and a wiring conductor connected to a via-hole conductor disposed immediately below or directly above the electrode pad is interposed between the two insulating layers. The temperature-compensated crystal oscillator according to claim 12.   The m and n are both 3 or more, and the electrode pad connected to the wiring conductor via the via-hole conductor is disposed so that another electrode pad surrounds the electrode pad. 15. The temperature compensated crystal oscillator according to 15.   13. The temperature according to claim 12, wherein the IC element is provided with a rewiring layer for making each connection pad of the IC element correspond to each electrode pad forming position on one main surface of the semiconductor element. Compensated crystal oscillator.   13. The temperature-compensated crystal oscillator according to claim 12, wherein the connection pad is formed larger than the corresponding electrode pad. Surface mounting external terminals are provided on the lower surface of the mounting substrate,
The plurality of electrode pads are a plurality of crystal electrode pads electrically connected to the crystal resonator element, an oscillation output electrode pad electrically connected to the surface mount external terminal, a ground electrode pad, a power supply voltage pad, 13. The temperature compensated crystal oscillator according to claim 12, further comprising a plurality of write control electrode pads.

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