JPH11121477A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPH11121477A
JPH11121477A JP28864697A JP28864697A JPH11121477A JP H11121477 A JPH11121477 A JP H11121477A JP 28864697 A JP28864697 A JP 28864697A JP 28864697 A JP28864697 A JP 28864697A JP H11121477 A JPH11121477 A JP H11121477A
Authority
JP
Japan
Prior art keywords
chip
pad electrode
mounting
electrode
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28864697A
Other languages
Japanese (ja)
Inventor
Yasuhiro Yamaji
泰弘 山地
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP28864697A priority Critical patent/JPH11121477A/en
Publication of JPH11121477A publication Critical patent/JPH11121477A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73207Bump and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Abstract

PROBLEM TO BE SOLVED: To obtain mounting efficiency degree approximate to degree of bare chip mounting, by electrically connecting chip pad electrodes and board pad electrodes of a wiring board which has electrodes and board pad electrode working as external terminals of an integrated circuit and whose outer shape is smaller than that of a semiconductor chip, and sealing the electrodes from the outside. SOLUTION: Chip pad electrodes are formed on one surface of a semiconductor chip 1, arranged along the edge of the semiconductor chip 1 and electrically connected with an integrated circuit. A board foot print 22 is formed on the mounting surface of a mounting board (circuit board) 21. Bump electrodes 8 for mounting face the mounting surface of the mounting board 21 and are connected with the foot print 22 formed on the mounting surface, and a desired electric product is constituted. That is, mounting to the mounting board 21 is enabled as it is, and the size is identical to the outer shape of the chip 1. As a result, mounting to the mounting board 21 is enabled with extremely high mounting density, e.g. practical efficiency of degree approximate to bare chip mounting.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は半導体チップと同
等の大きさのパッケージを有する半導体装置およびその
製造方法に間する。
The present invention relates to a semiconductor device having a package of the same size as a semiconductor chip and a method of manufacturing the same.

【0002】[0002]

【従来の技術】従来より、半導体装置は、集積回路を形
成した半導体チップを、このチップよりも大きいサイズ
のパッケージに収容した形となっている。半導体装置
は、電気的製品の中枢を担うものであり、現在の電気的
製品の多くは、この半導体装置が実装されて、所望の電
気的機能を達成する実装基板を内蔵している。
2. Description of the Related Art Conventionally, a semiconductor device has a form in which a semiconductor chip on which an integrated circuit is formed is housed in a package having a size larger than the chip. 2. Description of the Related Art A semiconductor device plays a central role in an electric product, and most of current electric products include a mounting board on which the semiconductor device is mounted to achieve a desired electric function.

【0003】また、近年、電気的製品の機能の高度化等
により、実装基板上に実装される半導体装置の数、種類
等も格段に多くなってきた。このため、実装密度の向上
が望まれている。実装密度の向上のために有効な手段と
し、パッケージの小型化がある。
In recent years, the number and types of semiconductor devices mounted on a mounting substrate have increased remarkably due to the sophistication of functions of electrical products. For this reason, improvement in mounting density is desired. An effective means for improving the packaging density is to reduce the size of the package.

【0004】上記事情に鑑み、最近、チップのサイズ
を、パッケージのサイズと同等としたチップスケールパ
ッケージ(CSP)が、盛んに開発されている。しか
し、CSPにおいても、その多くは、チップを、外部端
子となる電極を有し、チップよりも大きい配線基板の上
に搭載する構造である。このため、パッケージは、チッ
プよりも大きくなっている。
In view of the above circumstances, recently, a chip scale package (CSP) having a chip size equivalent to a package size has been actively developed. However, most CSPs also have a structure in which a chip has electrodes serving as external terminals and is mounted on a wiring board larger than the chip. For this reason, the package is larger than the chip.

【0005】図10に、従来のフリップチップ接続型の
CSPを示す。図10に示すように、半導体チップ10
1は、このチップ101よりも大きい配線基板102
に、バンプ電極103を介して接続される。配線基板1
02とチップ101との間には封止樹脂104が形成さ
れ、例えばバンプ電極103が外部に露出しないように
されている。パッケージ基板102の実装面側には実装
用バンプ電極105が形成されている。実装用バンプ電
極105は、図示せぬ実装基板に接続される。
FIG. 10 shows a conventional flip-chip connection type CSP. As shown in FIG.
1 is a wiring board 102 larger than the chip 101
Are connected via a bump electrode 103. Wiring board 1
Between the chip 02 and the chip 101, a sealing resin 104 is formed so that, for example, the bump electrode 103 is not exposed to the outside. On the mounting surface side of the package substrate 102, mounting bump electrodes 105 are formed. The mounting bump electrode 105 is connected to a mounting substrate (not shown).

【0006】図11は、従来のワイヤボンディング型の
CSPの断面を示す。図11に示すように、半導体チッ
プ101は、このチップ101よりも大きいパッケージ
基板102に接着剤106により接着されるとともに、
ボンディングワイヤ107を介して接続される。封止樹
脂108は、パッケージ基板102上からボンデングワ
イヤ107およびチップ101を覆うように形成され
る。パッケージ基板102の実装面側には、実装用バン
プ電極105が形成され、この実装用バンプ電極105
を介して図示せぬ実装基板に電気的に接続される。
FIG. 11 shows a cross section of a conventional wire bonding type CSP. As shown in FIG. 11, the semiconductor chip 101 is bonded to a package substrate 102 larger than the chip 101 with an adhesive 106,
They are connected via bonding wires 107. The sealing resin 108 is formed so as to cover the bonding wires 107 and the chip 101 from above the package substrate 102. On the mounting surface side of the package substrate 102, a mounting bump electrode 105 is formed.
Through a mounting board (not shown).

【0007】[0007]

【発明が解決しようとする課題】このように、パッケー
ジは、チップよりも大きいのが通常である。このため、
り、従来、実装部品(半導体装置)が大型化し、半導体
チップを直接基板に実装する場合に比べて、その実装効
率が著しく低下していた。
As described above, the package is usually larger than the chip. For this reason,
Conventionally, mounted components (semiconductor devices) have become larger, and the mounting efficiency has been significantly reduced as compared with a case where a semiconductor chip is directly mounted on a substrate.

【0008】この発明は上記事情に鑑みて為されたもの
で、その目的とするところは、通常のパッケージ封止品
と同程度の信頼性を実現しながら、ベアチップ実装と同
程度の実装効率を有する半導体装置およびその製造方法
を提供することにある。
The present invention has been made in view of the above circumstances, and an object of the present invention is to achieve the same level of reliability as a normal packaged product and to achieve the same level of mounting efficiency as bare chip mounting. And a method of manufacturing the same.

【0009】[0009]

【課題を解決するための手段】上記目的を達成するため
に、この発明の第1の態様では、集積回路に電気的に接
続されるチップパッド電極を有する半導体チップと、前
記半導体チップ上に配置され、前記集積回路の外部端子
となる電極およびこの電極に電気的に接続される基板パ
ッド電極をそれぞれ有する、前記半導体チップの外形以
下の外形を有する配線基板と、前記チップパッド電極と
前記基板パッド電極とを電気的に接続する接続手段と、
前記基板パッド電極および前記接続手段をそれぞれ外界
から封止する封止手段とを具備することを特徴としてい
る。
In order to achieve the above object, according to a first aspect of the present invention, there is provided a semiconductor chip having chip pad electrodes electrically connected to an integrated circuit, and a semiconductor chip disposed on the semiconductor chip. A wiring board having an outer shape equal to or smaller than the outer shape of the semiconductor chip, each having an electrode serving as an external terminal of the integrated circuit and a substrate pad electrode electrically connected to the electrode; the chip pad electrode and the substrate pad Connection means for electrically connecting the electrodes,
And sealing means for sealing the substrate pad electrode and the connection means from the outside.

【0010】また、この発明の第2の態様では、集積回
路に電気的に接続されるチップパッド電極を有する半導
体チップと、前記半導体チップ上に配置され、前記集積
回路の外部端子となる電極、この電極に電気的に接続さ
れる基板パッド電極、および前記チップパッド電極に対
応した開孔部を有する、前記半導体チップの外形と実質
的に等しい外形を有する配線基板と、前記チップパッド
電極と前記基板パッド電極とを前記開孔部を介して電気
的に接続する接続手段と、前記チップパッド電極、前記
基板パッド電極および前記接続手段をそれぞれ外界から
封止する封止手段とを具備することを特徴としている。
According to a second aspect of the present invention, there is provided a semiconductor chip having a chip pad electrode electrically connected to an integrated circuit, an electrode disposed on the semiconductor chip and serving as an external terminal of the integrated circuit, A wiring board having an outer shape substantially equal to the outer shape of the semiconductor chip, having a substrate pad electrode electrically connected to the electrode, and an opening corresponding to the chip pad electrode; Connecting means for electrically connecting the substrate pad electrode to the substrate via the opening, and sealing means for sealing the chip pad electrode, the substrate pad electrode, and the connecting means from the outside. Features.

【0011】また、前記封止手段は樹脂であることを特
徴としている。また、前記配線基板の、前記外部端子と
なる電極が形成される領域を囲んで形成された樹脂ダム
をさらに具備し、少なくとも前記接続手段が樹脂により
封止され、前記樹脂ダムにより囲まれた領域が外部に露
呈していることを特徴としている。
Further, the sealing means is made of a resin. Further, the wiring board further includes a resin dam formed so as to surround an area where the electrode serving as the external terminal is formed, wherein at least the connection means is sealed with a resin and the area surrounded by the resin dam Is exposed to the outside.

【0012】また、前記樹脂の上面と前記外部端子とな
る電極の上面とが、互いに同じ平面上にあることを特徴
としている。また、前記半導体装置の外部端子となる電
極が接続される配線パターンを有し、前記半導体装置と
電気的に接続されて所望の電気的製品を構成する実装基
板を有することを特徴としている。
Further, the upper surface of the resin and the upper surface of the electrode serving as the external terminal are on the same plane. Further, the semiconductor device has a wiring pattern to which an electrode serving as an external terminal of the semiconductor device is connected, and further includes a mounting substrate electrically connected to the semiconductor device to form a desired electric product.

【0013】また、その製造方法は、集積回路に電気的
に接続されるチップパッド電極を有する半導体チップ上
に、前記集積回路の外部端子となる電極およびこの電極
に電気的に接続される基板パッド電極をそれぞれ有す
る、前記半導体チップの外形以下の大きさの配線基板を
接着し、前記チップパッド電極と前記基板パッド電極と
を電気的に接続し、前記チップパッド電極、前記基板パ
ッド電極および前記接続手段をそれぞれ外界から封止す
ることを特徴としている。
Further, according to the manufacturing method, an electrode serving as an external terminal of the integrated circuit and a substrate pad electrically connected to the electrode are provided on a semiconductor chip having a chip pad electrode electrically connected to the integrated circuit. Bonding a wiring board having a size equal to or less than the outer shape of the semiconductor chip, each having an electrode, electrically connecting the chip pad electrode and the substrate pad electrode, and connecting the chip pad electrode, the substrate pad electrode and the connection Each of the means is sealed from the outside.

【0014】また、前記チップパッド電極、前記基板パ
ッド電極および前記接続手段をそれぞれ外界からの封止
は、前記チップ上を樹脂により被覆することにより行
い、前記チップ上を樹脂により被覆した後、さらにこの
樹脂の表面を後退させ、前記樹脂の上面と前記外部端子
となる電極の上面とを互いに同じ平面上に位置させるこ
とを特徴としている。
The sealing of the chip pad electrode, the substrate pad electrode, and the connection means from the outside is performed by covering the chip with a resin, and after covering the chip with the resin, The surface of the resin is receded, and the upper surface of the resin and the upper surface of the electrode serving as the external terminal are positioned on the same plane.

【0015】上記構成を有する半導体装置によれば、外
部端子となる電極を有する、チップの外形と実質的に等
しい、あるいはそれ以下の大きさの配線基板をチップの
上に配置する。このため、その大きさは、チップの外形
と実質的に同じにすることができ、例えばベアチップ実
装と同程度の極めて高い実装密度を達成することができ
る。
According to the semiconductor device having the above configuration, a wiring board having electrodes serving as external terminals and having a size substantially equal to or smaller than the outer shape of the chip is arranged on the chip. For this reason, the size can be made substantially the same as the outer shape of the chip, and for example, an extremely high mounting density comparable to that of bare chip mounting can be achieved.

【0016】また、チップパッド電極、基板パッド電極
および接続手段をそれぞれ、外界から封止する封止手段
を有する。このため、通常のパッケージ封止品と同程度
の信頼性を実現できる。
Further, the semiconductor device has sealing means for sealing the chip pad electrode, the substrate pad electrode and the connecting means from the outside. Therefore, the same level of reliability as a normal packaged product can be realized.

【0017】さらに配線基板がチップパッド電極に対応
した開孔部を有する構成であると、この開孔部に封止手
段を充填でき、接続手段の封止性が向上する。このた
め、信頼性をより向上できる。
Further, if the wiring substrate has an opening corresponding to the chip pad electrode, the opening can be filled with sealing means, and the sealing property of the connection means is improved. Therefore, the reliability can be further improved.

【0018】さらに外部端子となる電極が形成される領
域を囲む樹脂ダムをさらに有する構成によれば、外部端
子となる電極に樹脂が付着する等の事情を解消でき、例
えば実装基板に実装した時、接触不良等の発生を抑制で
き、より容易な実装を実現できる。
Further, according to the configuration having the resin dam surrounding the region where the electrode serving as the external terminal is formed, it is possible to eliminate the situation that the resin adheres to the electrode serving as the external terminal. In addition, the occurrence of poor contact and the like can be suppressed, and easier mounting can be realized.

【0019】さらに樹脂の上面と外部端子となる電極の
上面とが互いに同じ平面上にある構成によれば、例えば
実装基板に実装した時、外部端子となる電極が樹脂によ
って露出しない構造を得ることができ、より容易に信頼
性の高い構造を得ることができる。
Further, according to the configuration in which the upper surface of the resin and the upper surface of the electrode serving as the external terminal are on the same plane, it is possible to obtain a structure in which the electrode serving as the external terminal is not exposed by the resin when mounted on a mounting board. And a highly reliable structure can be obtained more easily.

【0020】[0020]

【発明の実施の形態】以下、この発明の実施の形態を、
図面を参照して説明する。なお、この説明に際し、全図
にわたり、共通の部分には共通の参照符号を付す。図1
(A)は、この発明の第1の実施形態に係る半導体装置
の平面図、図1(B)は、図1(A)中のB−B線に沿
う断面図である。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described.
This will be described with reference to the drawings. In this description, common parts are denoted by common reference symbols throughout the drawings. FIG.
FIG. 1A is a plan view of a semiconductor device according to a first embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along line BB in FIG. 1A.

【0021】図1(A)、(B)に示すように、半導体
チップ1の一表面には、チップパッド電極2が形成され
ている。チップパッド電極2は、チップ1の縁に沿って
配列されており、チップ1の内部に形成された図示せぬ
集積回路に電気的に接続される。チップ1の一表面上
は、パッシべーション膜3により被覆されている。パッ
シべーション膜3は、チップパッド電極2に通じる開孔
部4を有している。
As shown in FIGS. 1A and 1B, a chip pad electrode 2 is formed on one surface of a semiconductor chip 1. The chip pad electrodes 2 are arranged along the edge of the chip 1 and are electrically connected to an integrated circuit (not shown) formed inside the chip 1. One surface of the chip 1 is covered with a passivation film 3. The passivation film 3 has an opening 4 communicating with the chip pad electrode 2.

【0022】パッシべーション膜3上には、チップ1の
外形よりも小さい配線基板5が、接着層6を介して接着
されている。この実施形態における配線基板5は、チッ
プパッド電極2が配列されるパッドエリアの内側に配置
できる程度の大きさである。
On the passivation film 3, a wiring board 5 smaller than the outer shape of the chip 1 is bonded via an adhesive layer 6. The wiring board 5 in this embodiment is large enough to be arranged inside the pad area where the chip pad electrodes 2 are arranged.

【0023】配線基板5は、その縁に沿って配列された
基板パッド電極7が形成され、基板パッド電極7が配列
された領域の内側に行列状に配列された実装用バンプ電
極8とを有する。基板パッド電極7は、実装用バンプ電
極8と例えば1対1で対応し、対応した基板パッド電極
7と実装用バンプ電極8とは、配線基板5内に形成され
た配線層9を介して互いに接続される。また、基板パッ
ド電極7は、チップパッド電極2に、ボンディングワイ
ヤ10を介して電気的に接続される。これにより、チッ
プ1内に形成された図示せぬ集積回路は、実装用バンプ
電極8に電気的に接続される。実装用バンプ電極8は、
この半導体装置の外部電極(アウターリード)として機
能する。
The wiring board 5 has substrate pad electrodes 7 arranged along the edge thereof, and has mounting bump electrodes 8 arranged in a matrix inside a region where the substrate pad electrodes 7 are arranged. . The board pad electrodes 7 correspond to the mounting bump electrodes 8, for example, on a one-to-one basis. The corresponding board pad electrodes 7 and the mounting bump electrodes 8 are mutually connected via a wiring layer 9 formed in the wiring board 5. Connected. The substrate pad electrode 7 is electrically connected to the chip pad electrode 2 via a bonding wire 10. Thereby, an integrated circuit (not shown) formed in the chip 1 is electrically connected to the mounting bump electrodes 8. The mounting bump electrode 8
It functions as an external electrode (outer lead) of this semiconductor device.

【0024】チップパッド電極2、配線基板5、基板パ
ッド電極7、ワイヤ10はそれぞれ、チップ1の一表面
上に形成された樹脂11により封止されている。なお、
実装用バンプ電極8の一部は、この樹脂11より露出さ
れている。
The chip pad electrode 2, the wiring board 5, the substrate pad electrode 7, and the wire 10 are each sealed with a resin 11 formed on one surface of the chip 1. In addition,
A part of the mounting bump electrode 8 is exposed from the resin 11.

【0025】次に、その製造方法を説明する。図2
(A)〜図4(A)はそれぞれ、第1の実施形態に係る
半導体装置を、主要な製造工程順に示した平面図であ
る。また、図2(B)〜図4(B)はそれぞれ、(A)
図中のB−B線に沿う断面図である。
Next, the manufacturing method will be described. FIG.
4A to 4A are plan views showing the semiconductor device according to the first embodiment in the order of main manufacturing steps. FIGS. 2B to 4B respectively show (A)
It is sectional drawing which follows the BB line | wire in a figure.

【0026】まず、図2(A)、(B)に示すように、
チップ1に、チップパッド電極2、パッシベーション膜
3、パッシベーション膜3にチップパッド電極2に通じ
る開孔部4を順次形成する。次いで、パッドエリアの内
側のパッシベーション膜3上に、接着樹脂を塗布、また
は同図に示すように接着シート6を置く、あるいは貼着
する。
First, as shown in FIGS. 2A and 2B,
In the chip 1, a chip pad electrode 2, a passivation film 3, and an opening 4 communicating with the chip pad electrode 2 in the passivation film 3 are sequentially formed. Next, an adhesive resin is applied onto the passivation film 3 inside the pad area, or an adhesive sheet 6 is placed or attached as shown in FIG.

【0027】また、上述のチップ1とは別の工程で、配
線基板5に配線層9、基板パッド電極7、実装用バンプ
電極8をそれぞれ形成する。そして、実装用バンプ電極
8が形成された配線基板5を、図3(A)、(B)に示
すように接着シート6上に乗せ、接着シート6を介して
チップ1に接着する。
In a step different from that of the above-described chip 1, a wiring layer 9, a substrate pad electrode 7, and a mounting bump electrode 8 are formed on the wiring substrate 5, respectively. Then, the wiring board 5 on which the mounting bump electrodes 8 are formed is placed on the adhesive sheet 6 as shown in FIGS. 3A and 3B, and is bonded to the chip 1 via the adhesive sheet 6.

【0028】次に、図4(A)、(B)に示すように、
ワイヤボンディング法を用いて、チップパッド電極2と
基板パッド電極7とを、ボンディングワイヤ10により
互いに接続する。
Next, as shown in FIGS. 4A and 4B,
The chip pad electrode 2 and the substrate pad electrode 7 are connected to each other by a bonding wire 10 using a wire bonding method.

【0029】次に、図1(A)、(B)に示すように、
例えばポッティング等の方法を用いて、チップパッド電
極2、配線基板5、基板パッド電極7、ワイヤ10をそ
れぞれ、実装用バンプ電極8の一部が露出される状態で
封止する。
Next, as shown in FIGS. 1A and 1B,
For example, using a method such as potting, the chip pad electrode 2, the wiring substrate 5, the substrate pad electrode 7, and the wire 10 are sealed in a state where a part of the mounting bump electrode 8 is exposed.

【0030】以上のようにして、第1の実施形態に係る
半導体装置が製造される。図5は、第1の実施形態に係
る半導体装置を、実装基板上に実装した状態を示す図で
ある。
As described above, the semiconductor device according to the first embodiment is manufactured. FIG. 5 is a diagram illustrating a state in which the semiconductor device according to the first embodiment is mounted on a mounting board.

【0031】図5に示すように、実装基板(回路基板)
21の実装面には、基板フットプリント22が形成され
ている。第1の実施形態に係る装置の実装用バンプ電極
8は、実装基板21の実装面に向けられて、この実装面
に形成されたフットプリント22に接続され、所望の電
気的製品を構成する。
As shown in FIG. 5, a mounting board (circuit board)
A board footprint 22 is formed on the mounting surface 21. The mounting bump electrode 8 of the device according to the first embodiment faces the mounting surface of the mounting substrate 21 and is connected to a footprint 22 formed on the mounting surface, thereby forming a desired electrical product.

【0032】このような第1の実施形態に係る半導体装
置によれば、図5に示したように、そのまま実装基板2
1に実装することが可能であり、しかも、その大きさ
は、チップ1の外形と同じである。したがって、極めて
高い実装密度、例えばベアチップ実装と同程度の実装効
率で、実装基板21に実装することができる。
According to the semiconductor device according to the first embodiment, as shown in FIG.
1, and the size is the same as the outer shape of the chip 1. Therefore, it can be mounted on the mounting board 21 at an extremely high mounting density, for example, at the same mounting efficiency as bare chip mounting.

【0033】また、チップパッド電極2、基板パッド電
極7およびワイヤ10、即ちチップ1と配線基板5とを
電気的に接続する部分が樹脂11により封止されてい
る。このため、通常のパッケージ封止品と同程度の信頼
性を実現できる。
The chip pad electrode 2, the substrate pad electrode 7, and the wire 10, that is, the portion for electrically connecting the chip 1 to the wiring board 5 are sealed with a resin 11. Therefore, the same level of reliability as a normal packaged product can be realized.

【0034】また、チップ1と配線基板5との電気的な
接続を、ワイヤボンディング法により行うことにより、
例えばフリップチップ接続法による接続に比べ、特に接
続に関した良品率が高くなる。また、TAB技術に比べ
ても、ワイヤボンディング法は、同様に良品率や製造コ
ストを抑制できる。このようにアセンブリコストの増加
を抑制できるため、この発明に係る装置は、より低コス
トで生産でき、より低価格の半導体装置を市場に提供で
きる利点もある。
The electrical connection between the chip 1 and the wiring board 5 is performed by a wire bonding method.
For example, as compared with the connection by the flip-chip connection method, the non-defective rate particularly regarding the connection is increased. Also, compared to the TAB technique, the wire bonding method can similarly suppress the yield rate and the manufacturing cost. Since the increase in assembly cost can be suppressed in this manner, the device according to the present invention can be produced at lower cost, and has an advantage that a lower-cost semiconductor device can be provided to the market.

【0035】図6(A)は、この発明の第2の実施形態
に係る半導体装置の平面図、図6(B)は、図6(A)
中のB−B線に沿う断面図である。図6(A)、(B)
に示すように、第2の実施形態では、配線基板5に、チ
ップ1の外形と例えば同じ大きさで、チップパッド電極
2それぞれに対応した開孔部31を有したものを用いて
いる。ワイヤ10は、開孔部31を介してチップパッド
電極2と基板パッド電極7とを接続する。
FIG. 6A is a plan view of a semiconductor device according to a second embodiment of the present invention, and FIG. 6B is a plan view of FIG.
It is sectional drawing which follows the BB line | wire in a middle. FIG. 6 (A), (B)
As shown in FIG. 2, in the second embodiment, a wiring board 5 having the same size as the outer shape of the chip 1 and having openings 31 corresponding to the chip pad electrodes 2 is used. The wire 10 connects the chip pad electrode 2 and the substrate pad electrode 7 via the opening 31.

【0036】このような第2の実施形態に係る半導体装
置によれば、配線基板5によって、ワイヤ10の周囲に
樹脂11を充填できる開孔部31が得られるので、樹脂
封止の際、ワイヤ10の封止性を向上できる効果があ
る。
According to the semiconductor device according to the second embodiment, the wiring board 5 provides the opening 31 in which the resin 11 can be filled around the wire 10. 10 has the effect of improving the sealing performance.

【0037】なお、開孔部31は、図6(A)、(B)
に示したように一つのチップパッド電極2に一つずつ形
成する他、複数のチップパッド電極2に対して一つずつ
形成しても良く、あるいはチップ1の一辺に沿って配置
されるチップパッド電極2の全てが露出するように、ス
リット状に形成されても良い。
The aperture 31 is formed as shown in FIGS. 6A and 6B.
As shown in the above, one chip pad electrode 2 may be formed one by one, a plurality of chip pad electrodes 2 may be formed one by one, or a chip pad arranged along one side of the chip 1 It may be formed in a slit shape so that all of the electrodes 2 are exposed.

【0038】このように変形されても、ワイヤ10の周
囲に樹脂11を充填できる開孔部が得られるので、上記
同様の効果を得ることができる。また、配線基板5の大
きさも、チップ1の外形と同じでなくとも、チップパッ
ド電極2の上を覆い、かつ開孔部31を形成できる大き
さであれば良い。
[0038] Even if deformed in this manner, an opening portion in which the resin 11 can be filled around the wire 10 can be obtained, so that the same effect as described above can be obtained. Also, the size of the wiring board 5 need not be the same as the outer shape of the chip 1 as long as it covers the chip pad electrode 2 and can form the opening 31.

【0039】図7(A)は、この発明の第3の実施形態
に係る半導体装置の平面図、図7(B)は、図7(A)
中のB−B線に沿う断面図である。図7(A)、(B)
に示すように、第3の実施形態では、配線基板5の、基
板パッド電極7が配列される領域の内側に、実装用バン
プ電極8に樹脂11がかかるのを防ぐための樹脂ダム4
1を形成したものである。
FIG. 7A is a plan view of a semiconductor device according to the third embodiment of the present invention, and FIG. 7B is a plan view of FIG.
It is sectional drawing which follows the BB line | wire in a middle. FIG. 7 (A), (B)
As shown in FIG. 5, in the third embodiment, a resin dam 4 for preventing the resin 11 from being applied to the mounting bump electrodes 8 inside the region where the substrate pad electrodes 7 are arranged on the wiring substrate 5.
1 is formed.

【0040】このような第3の実施形態に係る半導体装
置によれば、樹脂ダム41によって、実装用バンプ電極
8に樹脂11がかかることを抑制できる。このため、例
えば実装用バンプ電極8の表面に付着した樹脂11を要
因とするような、実装基板との接触不良を抑制すること
ができる。
According to the semiconductor device according to the third embodiment, the resin dam 41 can prevent the resin 11 from being applied to the mounting bump electrodes 8. For this reason, it is possible to suppress poor contact with the mounting substrate due to, for example, the resin 11 attached to the surface of the mounting bump electrode 8.

【0041】なお、第3の実施形態に係る樹脂ダム41
は、第2の実施形態に係る開孔部31を具備した配線基
板5にも形成することができる。図8(A)は、この発
明の第4の実施形態に係る半導体装置の平面図、図8
(B)は、図8(A)中のB−B線に沿う断面図であ
る。
The resin dam 41 according to the third embodiment
Can also be formed on the wiring board 5 having the opening 31 according to the second embodiment. FIG. 8A is a plan view of a semiconductor device according to a fourth embodiment of the present invention, and FIG.
FIG. 9B is a cross-sectional view taken along the line BB in FIG.

【0042】図8(A)、(B)に示すように、第4の
実施形態では、樹脂11の上面と実装用バンプ電極8の
上面とが、互いに同じ平面上に位置するようにし、実装
バンプ電極8を平坦にしたものである。
As shown in FIGS. 8A and 8B, in the fourth embodiment, the upper surface of the resin 11 and the upper surface of the mounting bump electrode 8 are positioned on the same plane, The bump electrode 8 is made flat.

【0043】その製造方法は、まず、図9(A)に示す
ように、チップ1上を、実装用バンプ電極8が埋まるよ
うに樹脂11により封止した後、図9(B)に示すよう
に、機械加工等により実装用バンプ電極8が露出するよ
うに樹脂11を削る。
As shown in FIG. 9A, first, as shown in FIG. 9A, the chip 1 is sealed with a resin 11 so that the mounting bump electrodes 8 are buried, and then as shown in FIG. Next, the resin 11 is shaved by machining or the like so that the mounting bump electrodes 8 are exposed.

【0044】このような第4の実施形態に係る半導体装
置によれば、例えば実装基板21に実装した時、実装用
バンプ電極8が樹脂11により被覆でき、実装用バンプ
電極8が外部に露出しないようにできる。このため、実
装状態において、高い信頼性を得ることができる。
According to the semiconductor device according to the fourth embodiment, for example, when mounted on the mounting board 21, the mounting bump electrodes 8 can be covered with the resin 11, and the mounting bump electrodes 8 are not exposed to the outside. I can do it. Therefore, high reliability can be obtained in a mounted state.

【0045】なお、第4の実施形態に係る樹脂11の上
面と実装用バンプ電極8の上面とを互いに同じ平面上に
位置させた装置は、上記第1、第2、第3の実施形態の
いずれにも応用することができる。
The apparatus according to the fourth embodiment in which the upper surface of the resin 11 and the upper surface of the mounting bump electrode 8 are located on the same plane is the same as that of the first, second, and third embodiments. It can be applied to any of them.

【0046】[0046]

【発明の効果】以上、説明したように、この発明によれ
ば、通常のパッケージ封止品と同程度の信頼性を実現し
ながら、ベアチップ実装と同程度の実装効率を有する半
導体装置およびその製造方法を提供できる。
As described above, according to the present invention, a semiconductor device having the same level of efficiency as that of a bare chip while realizing the same level of reliability as a normal packaged product, and its manufacture. We can provide a method.

【図面の簡単な説明】[Brief description of the drawings]

【図1】図1(A)は第1の実施形態に係る半導体装置
の平面図、図1(B)は図1(A)中のB−B線に沿う
断面図。
FIG. 1A is a plan view of a semiconductor device according to a first embodiment, and FIG. 1B is a cross-sectional view taken along line BB in FIG. 1A.

【図2】図2(A)は第1の実施形態に係る半導体装置
の一製造工程における平面図、図2(B)は図2(A)
中のB−B線に沿う断面図。
FIG. 2A is a plan view showing one manufacturing step of the semiconductor device according to the first embodiment, and FIG. 2B is FIG. 2A.
Sectional drawing which follows the BB line | wire in a middle.

【図3】図3(A)は第1の実施形態に係る半導体装置
の一製造工程における平面図、図3(B)は図3(A)
中のB−B線に沿う断面図。
FIG. 3A is a plan view showing one manufacturing step of the semiconductor device according to the first embodiment, and FIG. 3B is a view showing FIG. 3A;
Sectional drawing which follows the BB line | wire in a middle.

【図4】図4(A)は第1の実施形態に係る半導体装置
の一製造工程における平面図、図4(B)は図4(A)
中のB−B線に沿う断面図。
FIG. 4A is a plan view showing one manufacturing step of the semiconductor device according to the first embodiment, and FIG. 4B is a view showing FIG. 4A;
Sectional drawing which follows the BB line | wire in a middle.

【図5】図5は第1の実施形態に係る半導体装置の実装
状態を示す図。
FIG. 5 is a view showing a mounting state of the semiconductor device according to the first embodiment;

【図6】図6(A)は第2の実施形態に係る半導体装置
の平面図、図6(B)は図6(A)中のB−B線に沿う
断面図。
FIG. 6A is a plan view of a semiconductor device according to a second embodiment, and FIG. 6B is a cross-sectional view taken along line BB in FIG. 6A.

【図7】図7(A)は第3の実施形態に係る半導体装置
の平面図、図7(B)は図7(A)中のB−B線に沿う
断面図。
7A is a plan view of a semiconductor device according to a third embodiment, and FIG. 7B is a cross-sectional view taken along line BB in FIG. 7A.

【図8】図8(A)は第4の実施形態に係る半導体装置
の平面図、図8(B)は図8(A)中のB−B線に沿う
断面図。
FIG. 8A is a plan view of a semiconductor device according to a fourth embodiment, and FIG. 8B is a cross-sectional view taken along line BB in FIG. 8A.

【図9】図9(A)、(B)はそれぞれ第4の実施形態
に係る半導体装置の一製造工程における断面図。
FIGS. 9A and 9B are cross-sectional views of a semiconductor device according to a fourth embodiment in one manufacturing step.

【図10】図10は従来の半導体装置の断面図。FIG. 10 is a cross-sectional view of a conventional semiconductor device.

【図11】図11は従来の半導体装置の断面図。FIG. 11 is a sectional view of a conventional semiconductor device.

【符号の説明】[Explanation of symbols]

1…半導体チップ、 2…チップパッド電極、 3…パッシベーション膜、 4…開孔部、 5…配線基板、 6…接着層(接着シート)、 7…基板パッド電極、 8…実装用バンプ電極、 9…配線層、 10…ボンディングワイヤ、 11…樹脂、 21…実装基板、 22…フットプリント、 31…開孔部、 41…樹脂ダム。 DESCRIPTION OF SYMBOLS 1 ... Semiconductor chip, 2 ... Chip pad electrode, 3 ... Passivation film, 4 ... Opening part, 5 ... Wiring board, 6 ... Adhesive layer (adhesive sheet), 7 ... Board pad electrode, 8 ... Bump electrode for mounting, 9 ... wiring layer, 10 ... bonding wire, 11 ... resin, 21 ... mounting board, 22 ... footprint, 31 ... opening, 41 ... resin dam.

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 集積回路に電気的に接続されるチップパ
ッド電極を有する半導体チップと、 前記半導体チップ上に配置され、前記集積回路の外部端
子となる電極およびこの電極に電気的に接続される基板
パッド電極をそれぞれ有する、前記半導体チップの外形
以下の大きさの配線基板と、 前記チップパッド電極と前記基板パッド電極とを電気的
に接続する接続手段と、 前記チップパッド電極、前記基板パッド電極および前記
接続手段をそれぞれ外界から封止する封止手段とを具備
することを特徴とする半導体装置。
A semiconductor chip having a chip pad electrode electrically connected to an integrated circuit; an electrode disposed on the semiconductor chip and serving as an external terminal of the integrated circuit; and electrically connected to the electrode. A wiring board having a size equal to or smaller than the outer shape of the semiconductor chip, each having a substrate pad electrode; connecting means for electrically connecting the chip pad electrode to the substrate pad electrode; the chip pad electrode; and the substrate pad electrode And a sealing means for sealing the connection means from the outside.
【請求項2】 集積回路に電気的に接続されるチップパ
ッド電極を有する半導体チップと、 前記半導体チップ上に配置され、前記集積回路の外部端
子となる電極、この電極に電気的に接続される基板パッ
ド電極、および前記チップパッド電極に対応した開孔部
を有する、前記半導体チップの外形と実質的に等しい大
きさの配線基板と、 前記チップパッド電極と前記基板パッド電極とを前記開
孔部を介して電気的に接続する接続手段と、 前記チップパッド電極、前記基板パッド電極および前記
接続手段をそれぞれ外界から封止する封止手段とを具備
することを特徴とする半導体装置。
2. A semiconductor chip having a chip pad electrode electrically connected to an integrated circuit; an electrode disposed on the semiconductor chip and serving as an external terminal of the integrated circuit; and electrically connected to the electrode A wiring board having a substrate pad electrode and an opening corresponding to the chip pad electrode, the wiring board having a size substantially equal to the outer shape of the semiconductor chip; and forming the opening in the chip pad electrode and the substrate pad electrode. And a sealing means for electrically sealing the chip pad electrode, the substrate pad electrode, and the connection means from the outside.
【請求項3】 前記封止手段は樹脂であることを特徴と
する請求項1および請求項2いずれかに記載の半導体装
置。
3. The semiconductor device according to claim 1, wherein said sealing means is a resin.
【請求項4】 前記配線基板の、前記外部端子となる電
極が形成される領域を囲んで形成された樹脂ダムをさら
に具備し、 少なくとも前記接続手段が樹脂により封止され、前記樹
脂ダムにより囲まれた領域が外部に露呈していることを
特徴とする請求項1および請求項2いずれかに記載の半
導体装置。
4. The semiconductor device according to claim 1, further comprising a resin dam formed so as to surround a region of the wiring board on which the electrode serving as the external terminal is formed, wherein at least the connection unit is sealed with a resin and surrounded by the resin dam. 3. The semiconductor device according to claim 1, wherein the exposed region is exposed to the outside.
【請求項5】 前記樹脂の上面と前記外部端子となる電
極の上面とが、互いに同じ平面上にあることを特徴とす
る請求項3および請求項4いずれかに記載の半導体装
置。
5. The semiconductor device according to claim 3, wherein an upper surface of the resin and an upper surface of the electrode serving as the external terminal are on the same plane.
【請求項6】 前記半導体装置の外部端子となる電極が
接続される配線パターンを有し、前記半導体装置と電気
的に接続されて所望の電気的製品を構成する実装基板を
有することを特徴とする請求項1乃至請求項5いずれか
一項に記載の半導体装置。
6. A semiconductor device comprising a wiring pattern to which an electrode serving as an external terminal of the semiconductor device is connected, and a mounting substrate electrically connected to the semiconductor device to form a desired electrical product. The semiconductor device according to claim 1.
【請求項7】集積回路に電気的に接続されるチップパッ
ド電極を有する半導体チップ上に、前記集積回路の外部
端子となる電極およびこの電極に電気的に接続される基
板パッド電極をそれぞれ有する、前記半導体チップの外
形以下の大きさの配線基板を接着する工程と、 前記チップパッド電極と前記基板パッド電極とを電気的
に接続する工程と、 前記チップパッド電極、前記基板パッド電極および前記
接続手段をそれぞれ外界から封止する工程と、 を具備することを特徴とする半導体装置の製造方法。
7. On a semiconductor chip having a chip pad electrode electrically connected to an integrated circuit, an electrode serving as an external terminal of the integrated circuit and a substrate pad electrode electrically connected to the electrode are provided. A step of bonding a wiring board having a size equal to or smaller than the outer shape of the semiconductor chip; a step of electrically connecting the chip pad electrode to the substrate pad electrode; the chip pad electrode, the substrate pad electrode, and the connection means And sealing each of the semiconductor devices from the outside world.
【請求項8】 前記チップパッド電極、前記基板パッド
電極および前記接続手段をそれぞれ外界から封止する工
程は、前記チップ上を樹脂により被覆する工程であり、 前記工程の後、前記樹脂の表面を後退させ、前記樹脂の
上面と前記外部端子となる電極の上面とを互いに同じ平
面上に位置させる工程をさらに具備することを特徴とす
る請求項7に記載の半導体装置の製造方法。
8. The step of sealing the chip pad electrode, the substrate pad electrode, and the connection means from the outside, respectively, is a step of covering the chip with a resin. The method of manufacturing a semiconductor device according to claim 7, further comprising a step of retreating and positioning an upper surface of the resin and an upper surface of an electrode serving as the external terminal on the same plane.
JP28864697A 1997-10-21 1997-10-21 Semiconductor device and its manufacture Pending JPH11121477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28864697A JPH11121477A (en) 1997-10-21 1997-10-21 Semiconductor device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28864697A JPH11121477A (en) 1997-10-21 1997-10-21 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
JPH11121477A true JPH11121477A (en) 1999-04-30

Family

ID=17732866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28864697A Pending JPH11121477A (en) 1997-10-21 1997-10-21 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPH11121477A (en)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004119552A (en) * 2002-09-25 2004-04-15 Matsushita Electric Works Ltd Semiconductor device and its manufacturing method
JP2005039791A (en) * 2003-05-29 2005-02-10 Kyocera Corp Temperature compensated crystal oscillator
JP2008072762A (en) * 2003-05-29 2008-03-27 Kyocera Corp Temperature-compensated crystal oscillator
JP2008182767A (en) * 2003-05-29 2008-08-07 Kyocera Corp Crystal oscillator
USRE44368E1 (en) 2003-05-29 2013-07-16 Kyocera Corporation Temperature-compensated crystal oscillator
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JP2009158801A (en) * 2007-12-27 2009-07-16 Elpida Memory Inc Method of manufacturing semiconductor device, and semiconductor device
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