US20050029933A1 - Cascaded organic electroluminescent devices with color filters - Google Patents
Cascaded organic electroluminescent devices with color filters Download PDFInfo
- Publication number
- US20050029933A1 US20050029933A1 US10/932,761 US93276104A US2005029933A1 US 20050029933 A1 US20050029933 A1 US 20050029933A1 US 93276104 A US93276104 A US 93276104A US 2005029933 A1 US2005029933 A1 US 2005029933A1
- Authority
- US
- United States
- Prior art keywords
- light
- organic electroluminescent
- oled device
- units
- cascaded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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Definitions
- the present invention relates to providing a OLED device having a plurality of organic electroluminescent (EL) units in the form of a cascaded organic electroluminescent device with color filters.
- EL organic electroluminescent
- Organic electroluminescent (EL), or organic light-emitting diode (OLED), devices are electronic devices that emit light in response to an applied potential.
- the structure of an OLED comprises, in sequence, an anode, an organic EL medium, and a cathode.
- the organic EL medium disposed between the anode and the cathode is commonly comprised of an organic hole-transporting layer (HTL) and an organic electron-transporting layer (ETL). Holes and electrons recombine and emit light in the ETL near the interface of HTL/ETL.
- HIL hole-injecting layer
- EIL electron-injecting layer
- Color, digital image display devices are well known and are based upon a variety of technologies such as cathode ray tubes, liquid crystal and solid-state light emitters such as Organic Light Emitting Diodes (OLEDs).
- OLEDs Organic Light Emitting Diodes
- a pixel includes red, green, and blue colored OLEDs. By combining the illumination from each of these three OLEDs in an additive color system, a full-color display having a wide variety of colors can be achieved.
- OLEDs may be used to generate color directly using organic materials that are doped to emit energy in desired portions of the electromagnetic spectrum.
- OLEDs may be used to generate color directly using organic materials that are doped to emit energy in desired portions of the electromagnetic spectrum.
- to create a color OLED device using different organic materials requires the patterning of these materials over the surface of the OLED device substrate. This patterning is a difficult and problematic task, especially for large substrates, for example substrates having a diagonal greater than about 50 cm.
- An alternative method utilizes a white-light emitting material in combination with color filter arrays to provide color emission, much as conventional LCD displays do.
- White-light emitting OLED devices that are known in the art are typically formed by doping multiple, individual emitting layers such that each doped layer produces light within a specific spectral frequency band.
- White-light emitting devices may be formed from either two or three individual emitting materials.
- this approach suffers from efficiency problems because the white light emitters tend to be relatively broadband so that most of the light emitted by the white-light emitter is absorbed by the color filters, reducing the efficiency of the OLED device. Additionally, some of the white light emitters may age more rapidly than other due to the relative efficiencies for which they emit different colors.
- stacked OLED which is fabricated by stacking several individual OLED vertically
- the stacked OLEDs are fabricated by vertically stacking several OLEDs, each independently emitting light of a different color or of the same color. Using their stacked OLED structure can make full color emission devices with higher integrated density in the display, but each OLED needs a separate power source.
- the present invention is directed towards an OLED device comprising a substrate having thereon a cascaded organic electroluminescent device comprising: a) an anode; b) a cathode; c) a plurality of cascaded organic electroluminescent units disposed between the anode and the cathode, wherein each organic electroluminescent unit includes at least one light-emitting layer and wherein the plurality of cascaded units includes at least two units that emit light of different colors; and d) a connecting unit disposed between each adjacent cascaded organic electroluminescent unit; and e) a colored filter that filters the emitted light.
- a cascaded organic electroluminescent device comprising: a) an anode; b) a cathode; c) a plurality of cascaded organic electroluminescent units disposed between the anode and the cathode, wherein each organic electroluminescent unit includes at least one light-emitting layer and wherein the plurality of cas
- Various embodiments of the present invention provide color OLED devices with simplified manufacturing, improved efficiency, and reduced aging.
- FIG. 1 depicts a schematic cross sectional view of a cascaded OLED device according to the present invention
- FIG. 3 depicts a schematic cross sectional view of an alternative cascaded OLED device according to the present invention.
- FIGS. 1 and 3 are not to scale since the individual layers are too thin and the thickness differences of various layers too great to permit depiction to scale.
- the layer structure of a cascaded OLED comprises an anode, a cathode, a plurality of organic EL units and a plurality of organic connectors (or connecting units thereafter), wherein each of the connecting units is disposed between two organic EL units.
- the organic EL unit includes at least one light-emitting layer, and typically comprises, in sequence, a hole-transport layer, a light-emitting layer, and an electron-transport layer, denoted in brief as HTL/LEL/ETL.
- the connecting unit for the cascaded OLED should provide electron injection into the electron-transporting layer and hole injection into the hole-transporting layer of the two adjacent organic EL units.
- a variety of materials may be used to form the connecting units.
- connecting unit materials are selected to provide high optical transparency and excellent charge injection, thereby providing the cascaded OLED high electroluminescence efficiency and operation at an overall low driving voltage.
- the connecting unit may comprise doped organic connectors provided between adjacent organic EL units.
- Each doped organic connector may include at least one n-type doped organic layer, or at least one p-type doped organic layer, or a combination of layers, thereof.
- the doped organic connector includes both an n-type doped organic layer and a p-type doped organic layer disposed adjacent to one another to form a p-n heterojunction. It is also preferred that the n-type doped organic layer is disposed towards the anode side, and the p-type doped organic layer is disposed towards the cathode side.
- n-type doped organic layer or a p-type doped organic layer, or both (the p-n junction) is in part dependent on the organic materials that include the organic EL units.
- Each connector can be optimized to yield the best performance with a particular set of organic EL units. This includes choice of materials, layer thickness, modes of deposition, and so forth.
- An n-type doped organic layer means that the organic layer has semiconducting properties after doping, and the electrical current through this layer is substantially carried by the electrons.
- a p-type doped organic layer means that the organic layer has semiconducting properties after doping, and the electrical current through this layer is substantially carried by the holes.
- a p-n heterojunction means an interfacial region (or junction) formed when a p-type layer and an n-type layer contact each other.
- N-type doped organic layers may include a host organic material and at least one n-type dopant.
- the host material in the n-typed doped organic layer can include a small molecule material or a polymeric material, or combinations thereof, and it is preferred that it can support electron transport.
- the p-type doped organic layers may include a host organic material and at least one p-type dopant.
- the host material can include a small molecule material or a polymeric material, or combinations thereof, and it is preferred that it can support hole transport. In some instances, the same host material can be used for both n-typed and p-type doped organic layers, provided that it exhibits both hole and electron transport properties set forth above.
- the n-type doped concentration or the p-type doped concentration is preferably in the range of 0.01-10 vol. %.
- the total thickness of each doped organic connector is typically less than 100 nm, and preferably in the range of about 1 to 100 nm.
- the organic electron-transporting materials used in conventional OLED devices represent a useful class of host materials that may be employed for the n-type doped organic layer.
- Preferred materials are metal chelated oxinoid compounds, including chelates of oxine itself (also commonly referred to as 8-quinolinol or 8-hydroxyquinoline), such as tris(8-hydroxyquinoline) aluminum.
- Other materials include various butadiene derivatives as disclosed by Tang (U.S. Pat. No. 4,356,429), various heterocyclic optical brighteners as disclosed by Van Slyke and Tang and others (U.S. Pat. No. 4,539,507), triazines, hydroxyquinoline derivatives, and benzazole derivatives.
- Silole derivatives such as 2,5-bis(2′,2′′-bipridin-6-yl)-1,1-dimethyl-3,4-diphenyl silacyclopentadiene as reported by Murata and others [Applied Physics Letters, 80, 189 (2002)], are also useful host materials.
- Materials useful as n-type dopants in the n-type doped organic layer of a doped organic connector include metals or metal compounds having a work function less than 4.0 eV.
- Particularly useful dopants include alkali metals, alkali metal compounds, alkaline earth metals, and alkaline metal compounds.
- the term “metal compounds” includes organometallic complexes, metal-organic salts, and inorganic salts, oxides and halides.
- Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, La, Ce, Sm, Eu, Th, Dy, or Yb, and their compounds are particularly useful.
- Materials useful as n-type dopants in the n-type doped organic layer of a doped organic connector also include organic reducing agents with strong electron-donating properties.
- strong electron-donating properties we mean that the organic dopant should be able to donate at least some electronic charge to the host to form a charge-transfer complex with the host.
- organic molecules include bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF), tetrathiafulvalene (TTF), and their derivatives.
- the dopant can be any of the above or also a material molecularly dispersed or copolymerized with the host as a minor component.
- the hole-transporting materials used in conventional OLED devices represent a useful class of host materials for p-type doped organic layers.
- Preferred materials include aromatic tertiary amines having at least one trivalent nitrogen atom that is bonded only to carbon atoms, at least one of which is a member of an aromatic ring.
- the aromatic tertiary amine can be an arylamine, such as a monoarylamine, diarylamine, triarylamine, or a polymeric arylamine.
- Other suitable triarylamines substituted with one or more vinyl radicals and/or comprising at least one active hydrogen-containing group are disclosed by Brantley and others (U.S. Pat. No. 3,567,450 and U.S. Pat. No. 3,658,520).
- a more preferred class of aromatic tertiary amines are those which include at least two aromatic tertiary amine moieties as described by Van Slyke and Tang and others (U.S. Pat. No. 4,720,432 and U.S. Pat. No. 5,061,569).
- Non-limiting examples include as N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine (NPB) and N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1-biphenyl-4,4′-diamine (TPD), and N,N,N′,N′-tetranaphthyl-benzidine (TNB).
- Materials useful as p-type dopants in p-type doped organic layers of doped organic connectors include oxidizing agents with strong electron-withdrawing properties.
- strong electron-withdrawing properties we mean that the organic dopant should be able to accept some electronic charge from the host to form a charge-transfer complex with the host.
- Some non-limiting examples include organic compounds such as 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F 4 -TCNQ) and other derivatives of TCNQ, and inorganic oxidizing agents such as iodine, FeCl 3 , SbCl 5 , and some other metal chlorides.
- the dopant can be any of the above or also a material molecularly dispersed or copolymerized with the host as a minor component.
- Examples of materials that can be used as host for either n-type or p-type doped organic layers include, but are not limited to: various anthracene derivatives including those described in U.S. Pat. No. 5,972,247; certain carbazole derivatives, such as 4,4-bis(9-dicarbazolyl)-biphenyl (CBP); and distyrylarylene derivatives such as 4,4′-bis(2,2′-diphenyl vinyl)-1,1′-biphenyl and as described in U.S. Pat. No. 5,121,029.
- various anthracene derivatives including those described in U.S. Pat. No. 5,972,247
- CBP 4,4-bis(9-dicarbazolyl)-biphenyl
- distyrylarylene derivatives such as 4,4′-bis(2,2′-diphenyl vinyl)-1,1′-biphenyl and as described in U.S. Pat. No. 5,121,029.
- the materials used for fabricating doped organic connectors are preferably substantially transparent to emitted light.
- the connecting unit comprises, in sequence, an n-type doped organic layer and a p-type doped organic layer.
- the ETL of the EL unit is adjacent to the n-type doped layer of the connecting unit and the HTL of the EL unit is adjacent to the p-type doped connecting unit.
- a single external power source is needed to connect to the anode and the cathode with the positive potential applied to the anode and the negative potential to the cathode. No other electrical connections are needed to connect the individual organic EL units to external electrical power sources.
- the physical spacing between adjacent electroluminescent zones may be more than 90 nm and the connecting unit disposed between each adjacent organic electroluminescent unit may comprise an n-type doped organic layer and a p-type doped organic layer forming a transparent p-n junction structure wherein the resistivity of each of the doped layers is higher than 10 i-cm, as described in commonly assigned U.S. patent application Ser. No. 10/437,195 filed May 13, 2003 entitled “Cascaded Organic Electroluminescent Device Having Connecting Units with n-Type and p-Type Organic Layers”, the disclosure of which is herein incorporated by reference.
- the optical transparency of the layers constituting the organic EL units and the connecting units be as high as possible to allow for radiation generated in the organic EL units to exit the device.
- the anode should be transparent and the cathode can be opaque, reflecting, or transparent.
- the cathode should be transparent and the anode can be opaque, reflecting or transparent.
- the layers constituting the organic EL units are generally optically transparent to the radiation generated by the EL units, and therefore their transparency is generally not a concern for the construction for the cascaded OLEDs.
- the operational stability of cascaded OLED is dependent to a large extent on the stability of the connecting units.
- the driving voltage will be highly dependent on whether or not the connecting unit can provide the necessary electron and hole injection. It is generally known that the close proximity of two dissimilar materials may result in diffusion of matters from one into another, or in interdiffusion of matters across the boundary between the two.
- an interfacial layer which provides a barrier for interfusion may be introduced in between the n-type doped layer and the p-type doped layer, as described in U.S. Pat. No. 6,717,358, the disclosure of which is incorporated herein by reference.
- Interfacial layers useful in the connecting unit may comprise at least one inorganic semiconducting material or combinations of more than one of the semiconducting materials. Suitable semiconducting materials should have an electron energy band gap less than 4.0 eV. The electron energy band gap is defined as the energy difference between the highest occupied molecular orbital and the lowest unoccupied molecular orbital of the molecule.
- a useful class of materials can be chosen from the compounds of elements listed in groups IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB, IVB, and VB in the Periodic Table of the Elements (e.g. the Periodic Table of the Elements published by VWR Scientific Products).
- These compounds include the carbides, silicides, nitrides, phosphides, arsenides, oxides, sulfides, selenides, and tellurides, and mixture thereof.
- These semiconducting compounds can be in either stoichoimetic or non-stoichiometic states, that is they may contain excess or deficit metal component.
- Particularly useful materials for the interfacial layer are the semiconducting oxides of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, rhenium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, zinc, cadmium, gallium, thallium, silicon, germanium, lead, and antimony, or combinations thereof.
- Particularly useful materials for the interfacial layer also including zinc selenide, gallium nitride, silicon carbide, or combinations thereof.
- the interfacial layer useful in a connecting unit also can comprise at least one or more metallic materials, where at least one of these metallic materials has a work-function higher than 4.0 eV as listed by Sze, in Physics of Semiconducting Devices, 2 nd Edition, Wiley, N.Y., 1981, p. 251.
- the thickness of an interfacial layer suitable for the construction of a connecting unit is preferably in the range of 0.05 nm to 10 ⁇ m, more preferably between 0.1 nm to 5 nm for inorganic semiconducting materials and between 0.05 nm to 1 nm for metallic materials.
- the connecting unit disposed between each adjacent organic electroluminescent unit in the cascaded device may include at least a high work function metal layer having a work function of no less than 4.0 eV and a metal compound layer, wherein the intermediate connector has a sheet resistance of higher than 100 k ⁇ per square, such as described in copending, commonly assigned U.S. Ser. No. 10/857,516, filed May 28, 2004, the disclosure of which is incorporated herein y reference.
- the use of such high work function metal layer in a connecting unit of a cascaded OLED device improves the operational stability of the OLED.
- the intermediate connector should provide good carrier injection into the adjacent organic EL units. Due to their lower resistivity than that of organic materials, metals, metal compounds, or other inorganic compounds can be good for carrier injection. However, low resistivity can cause low sheet resistance resulting in pixel crosstalk. If the lateral current passing through the adjacent pixels to cause pixel crosstalk is limited to less than 10% of the current used to drive a pixel, the lateral resistance of the intermediate connector (R ic ) should be at least 8 times the resistance of the cascaded OLED.
- the static resistance between two electrodes of a conventional OLED is about several k ⁇ s, and a cascaded OLED should have a resistance of about 10 k ⁇ or several 10 k ⁇ s between the two electrodes. Therefore R ic should be greater than 100 k ⁇ . Considering the space between each pixel is smaller than one square, the sheet resistance of the intermediate connector should be then greater than 100 k ⁇ per square (lateral resistance equals to sheet resistance times the number of square).
- sheet resistance is determined by both the resistivity and the thickness of the films (sheet resistance equals to film resistivity divided by film thickness), when the layers constituting an intermediate connector are selected from metals, metal compounds, or other inorganic compounds having low resistivity, a sheet resistance of the intermediate connector greater than 100 k ⁇ per square can still be achievable if the layers are thin enough.
- tandem OLED Another requirement for the tandem OLED to function efficiently is that the optical transparency of the layers constituting the organic EL units and the intermediate connectors be as high as possible to permit for radiation produced in the organic EL units to exit the device. According to a simple calculation, if the optical transmission of each intermediate connector is 70% of the emitting light, a tandem OLED will not have much benefit because no matter how many EL units there are in the device, the electroluminance efficiency can never be doubled when comparing to a conventional device.
- the layers constituting the organic EL units are generally optically transparent to the radiation produced by the EL units, and therefore their transparency is generally not a concern for the construction of the tandem OLEDs. As is known, metals, metal compounds, or other inorganic compounds can have low transparency.
- the layers constituting an intermediate connector are selected from the metals, metal compounds, or other inorganic compounds, an optical transmission higher than 70% can still be achievable if the layers are thin enough.
- the intermediate connector has at least 75% optical transmission in the visible region of the spectrum.
- the intermediate connectors may comprise, in sequence, a low work function metal layer, a high work function metal layer, and a metal compound layer.
- a low work function metal is defined as a metal having a work function less than 4.0 eV.
- a high work function metal is defined as a metal having a work function no less than 4.0 eV.
- the low work function metal layer is preferably disposed adjacent to the ETL of an organic EL unit towards the anode side, and the metal compound layer is preferably disposed adjacent to the HTL of another organic EL unit towards the cathode side.
- the low work function metal layer may be selected to provide efficient electron injection into the adjacent electron-transporting layer.
- the metal compound layer may be selected to provide efficient hole injection into the adjacent hole-transporting layer.
- the metal compound layer comprises, but is not limited to, a p-type semiconductor.
- the high work function metal layer is selected to improve the operational stability of the OLED by preventing a possible interaction or interdiffusion between the low work function layer and the metal compound layer.
- the intermediate connectors may comprise, in sequence, an n-type semiconductor layer, a high work function metal layer, and a metal compound layer.
- the n-type semiconductor layer is preferably disposed adjacent to the ETL of an organic EL unit towards the anode side
- the metal compound layer is preferably disposed adjacent to the HTL of another organic EL unit towards the cathode side.
- an n-type semiconductor layer means that the layer is electrically conductive having electrons as the major charge carriers.
- a p-type semiconductor layer means that the layer is electrically conductive having holes as the major charge carriers. Similar to a low work function metal layer, the n-type semiconductor layer may be selected to provide efficient electron injection into the adjacent electron-transporting layer.
- the metal compound layer again may be selected to provide efficient hole injection into the adjacent hole-transporting layer, and the high work function metal layer is selected to improve the operational stability of the OLED by preventing a possible interaction or interdiffusion between the n-type semiconductor layer and the metal compound layer.
- the layer structure of the intermediate connector can be simplified by comprising, in sequence, a high work function metal layer disposed adjacent to the n-type doped ETL of an organic EL unit towards the anode side, and a metal compound layer disposed adjacent to the HTL of another organic EL unit towards the cathode side.
- the metal compound layer may be selected to provide efficient hole injection into the adjacent hole-transporting layer, and the high work function metal layer is selected to improve the operational stability of the OLED by preventing a possible interaction or interdiffusion between the n-type doped ETL and the metal compound layer.
- an n-type doped organic layer means that the layer is electrically conductive, and the charge carriers are primarily electrons.
- the conductivity is provided by the formation of a charge-transfer complex as a result of electron transfer from the dopant to the host material.
- the layer electrical conductivity can change by several orders of magnitude.
- the thickness of the low work function metal layer, when employed, in the intermediate connectors is preferably in the range of from 0.1 nm to 5.0 nm, more preferably in the range of from 0.2 nm to 2.0 nm.
- the thickness of the high work function metal layer, when employed, in the intermediate connectors is preferably in the range of from 0.1 nm to 5.0 nm, more preferably in the range of from 0.2 nm to 2.0 nm.
- the thickness of the metal compound layer, when employed, in the intermediate connectors is preferably in the range of from 0.5 nm to 20 nm, more preferably in the range of from 1.0 nm to 5.0 nm.
- the thickness of the n-type semiconductor layer, when employed, in the intermediate connectors is preferably in the range of from 0.5 nm to 20 nm, more preferably in the range of from 1.0 nm to 5.0 nm.
- Low work function metal layers may include, e.g., Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, La, Ce, Nd, Sm, Eu, Th, Dy, or Yb.
- the low work function metal layer includes Li, Na, Cs, Ca, Ba, or Yb.
- High work function metal layers may include, e.g., Ti, Zr, Ti, Nb, Ta, Cr, Mo, W, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt.
- the high work function metal layer includes Ag, Al, Cu, Au, Zn, In, or Sn. More preferably, the high work function metal layer includes Ag or Al.
- the metal compound layer when employed, can be selected from the stoichiometric oxides or nonstoichiometric oxides of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, tungsten, manganese, iron, ruthenium, rhodium, iridium, nickel, palladium, platinum, copper, zinc, silicon, or germanium, or combinations thereof.
- the metal compound layer can be selected from the stoichiometric sulfides or nonstoichiometric sulfides of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, tungsten, manganese, iron, ruthenium, rhodium, iridium, nickel, palladium, platinum, copper, silicon, or germanium, or combinations thereof.
- the metal compound layer can be selected from the stoichiometric selenides or nonstoichiometric selenides of titanium, zirconium, hafiium, niobium, tantalum, molybdenum, tungsten, manganese, iron, ruthenium, rhodium, iridium, nickel, palladium, platinum, copper, silicon, or germanium, or combinations thereof.
- the metal compound layer can be selected from the stoichiometric tellurides or nonstoichiometric tellurides of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, tungsten, manganese, iron, ruthenium, rhodium, iridium, nickel, palladium, platinum, copper, silicon, or germanium, or combinations thereof.
- the metal compound layer can be selected from the stoichiometric nitrides or nonstoichiometric nitrides of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, tungsten, manganese, iron, ruthenium, rhodium, iridium, nickel, palladium, platinum, copper, zinc, gallium, silicon, or germanium, or combinations thereof.
- the metal compound layer can also be selected from the stoichiometric carbides or nonstoichiometric carbides of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, tungsten, manganese, iron, ruthenium, rhodium, iridium, nickel, palladium, platinum, copper, zinc, aluminum, silicon, or germanium, or combinations thereof.
- the metal compound layer can be selected from MoO 3 , NiMoO 4 , CuMoO 4 , WO 3 , ZnTe, Al 4 C 3 , AIF 3 , B 2 S 3 , CuS, GaP, InP, or SnTe.
- the metal compound layer is selected from MoO 3 , NiMoO 4 , CuMoO 4 , or WO 3 .
- the n-type semiconductor layer when employed, may include, e.g., ZnSe, ZnS, ZnSSe, SnSe, SnS, SnSSe, LaCuO 3 , or La 4 Ru 6 O 19 .
- the n-type semiconductor layer includes ZnSe or ZnS.
- the intermediate connectors layers can be produced, e.g., by thermal evaporation, electron beam evaporation, or ion sputtering technique.
- the intermediate connectors are fabricated from materials which allow for a thermal evaporation method for the deposition of all the materials in the fabrication of the cascaded OLED, including the intermediate connectors.
- FIG. 1 shows a cascaded bottom emitting OLED device 100 in accordance with one embodiment of the present invention.
- This cascaded OLED has a plurality of independently controlled anodes 110 located over a substrate 105 and a common cathode 140 , at least one of which is transparent.
- Disposed between the anode and the cathode are a stack 120 of three organic EL units 121 , 122 , and 123 . These organic EL units are cascaded serially to each other and to the anode and the cathode.
- Unit 121 is the first EL unit (adjacent to the anode) and 123 is the third unit (adjacent to the cathode).
- EL unit 122 is an intermediate organic EL unit disposed between unit 121 and 123 . Disposed between any two adjacent organic EL units is a connecting unit 130 .
- Each anode 110 in the cascaded OLED 100 is externally connected to a voltage/current source 150 through electrical conductors 160 and can be individually powered to provide current for the associated light emitters, typically through either a passive-matrix or active-matrix control scheme.
- the number of the organic EL units in the cascaded OLED is in principle equal to or more than 2.
- the number of the organic EL units in the stacked OLED is such that the luminance efficiency in units of cd/A is improved or maximized.
- three or more cascaded organic EL units providing independent optical emission peaks may be employed to provide a white emission having a combination of relatively narrow band emitters rather than a single broad-band white light emission.
- EL units 121 , 122 , and 123 emit light of different colors having different efficiencies, for example red light 128 , green light 129 , and blue light 127 .
- the plurality of cascaded organic electroluminescent units are disposed between a plurality of anodes 110 and a common cathode 140 .
- Each of the plurality of anodes defines an independently controlled light-emitting area of the OLED device.
- Each independently controlled light-emitting area is associated with a complementary color filter 124 , 125 , 126 that transmits the light emitted by only one of the three EL units.
- each light emitting area can be made to emit light of a different color, thus providing a full-color OLED device.
- Cascaded OLED 100 is operated by applying an electric potential generated by a voltage/current source 150 between a pair of contact electrodes, anodes 110 and cathode 140 , such that anode 110 is at a more positive potential with respect to the cathode 140 .
- This externally applied electrical potential is distributed among the three organic EL units in proportion to the electrical resistance of each of these units.
- the electric potential across the cascaded OLED causes holes (positively charged carriers) to be injected from anodes 110 into the first organic EL unit 121 , and electrons (negatively charged carriers) to be injected from cathode 140 into the third organic EL unit 123 . Simultaneously, electrons and holes are generated in, and separated from, each of the connecting units 130 .
- Electrons thus generated in a connecting unit 130 are injected towards the anode and into the adjacent organic EL unit.
- holes generated in a connecting unit 130 are injected towards the cathode and into the adjacent organic EL unit. Subsequently, these electrons and holes recombine in their corresponding organic EL units to produce light, which is observed via the transparent electrode or electrodes of the OLED through the corresponding color filter 124 , 125 , 126 .
- the electrons injected from cathode are energetically cascading from the third organic EL unit 123 to the first organic EL unit 121 , and emit light in each of the organic EL units. Therefore, we prefer to use the term “cascaded OLED” instead of “stacked OLED” in the present invention.
- Each organic EL unit in the cascaded OLED 100 is capable of supporting hole and electron transport, and electron-hole recombination to produce light.
- Each organic EL unit can include a single layer or a plurality of layers.
- Organic EL multiplayer structures include HTL/ETL, HTL/LEL/ETL, HIL/HTL/LEL/ETL, HIL/HTL/LEL/ETL/EIL, HIL/HTL/electron-blocking layer or hole-blocking layer/LEL/ETL/EIL, HIL/HTL/LEL/hole-blocking layer/ETL/EIL.
- Organic EL unit can be formed from small molecule OLED materials or polymeric LED materials, both known in the art, or combinations thereof.
- Each organic EL unit in the cascaded OLED device can be the same or different from other units.
- Some organic EL units can be polymeric LED and other units can be small molecule OLEDs.
- Each organic EL unit can be selected in order to optimize performance or achieve a desired attribute, for example light transmission through the OLED stack, driving voltage, luminance efficiency, light emission color, manufacturability, device stability, and so forth.
- the layer structure of the organic EL unit adjacent to the anode preferably is of HIL/HTL/LEL/ETL
- the layer structure of the organic EL unit adjacent to the cathode preferably is of HTL/LEL/ETL/EIL
- the layer structure of the intermediate organic EL units preferably are of HTL/LEL/ETL.
- Connectors facilitate hole injection into the HTL of one organic EL unit and electron injection into ETL of the adjacent organic EL unit.
- each organic EL unit the transport of the hole and electron carriers is supported by the HTL and ETL, respectively.
- the LEL may itself be an ETL. Recombination of the hole and electron carriers in the vicinity at or near the HTL/ETL interface within each organic EL unit causes light to be produced (electroluminescence).
- the HTL in each organic EL unit can be the same or different in terms of materials used, layer thickness, method of deposition, and so forth.
- the properties of the HTL in the device can be individually optimized to achieve the desired performance or feature, for example light transmission through the OLED stack, driving voltage, luminance efficiency, light emission color, manufacturability, device stability, and so forth. The same is true for the ETL and LEL.
- HIL hole-injecting layer
- EIL electron-injecting layer
- each organic EL unit In order to minimize driving voltage for the cascaded OLED, it is desirable to make each organic EL unit as thin as possible without compromising the electroluminescence efficiency. It is preferable that each organic EL unit is less than 500 nm thick, and more preferable that it be 2-200 nm thick. It is also preferable that each layer within the organic EL unit be 200 nm thick or less, and more preferable that it be 0.1-100 nm.
- the cascaded OLED 100 of the present invention is typically provided over a supporting substrate 105 where either the cathode 140 or anode 110 can be in contact with the substrate 105 .
- the electrode in contact with the substrate is conveniently referred to as the bottom electrode.
- the bottom electrode is the anode, but the present invention is not limited to that configuration.
- the substrate can either be light transmissive or opaque, depending on the intended direction of light emission. The light transmissive property is desirable for viewing the EL emission through the substrate (a bottom emitter configuration). Transparent glass or plastic is commonly employed in such cases.
- the transmissive characteristic of the bottom support is immaterial, and therefore can be light transmissive, light absorbing or light reflective.
- Substrates for use in this case include, but are not limited to, glass, plastic, semiconductor materials, silicon, ceramics, and circuit board materials. Of course, it is necessary to provide in these device configurations a light-transparent top electrode. In such a configuration, the color filters 124 - 126 may be provided over the cathode 140 , any protective layers located over the cathode 140 , or on an encapsulating cover (not shown) provided over the OLED materials and affixed to the substrate 105 .
- the anode When EL emission is viewed through anode 110 , the anode should be transparent or substantially transparent to the emission of interest.
- Common transparent anode materials used in the present invention are indium-tin oxide (ITO), indium-zinc oxide (IZO) and tin oxide, but other metal oxides can work including, but not limited to, aluminum- or indium-doped zinc oxide, magnesium-indium oxide, and nickel-tungsten oxide.
- metal nitrides such as gallium nitride
- metal selenides such as zinc selenide
- metal sulfides such as zinc sulfide
- anode For applications where EL emission is viewed only through the cathode electrode, the transmissive characteristics of anode are immaterial and any conductive material can be used, transparent, opaque or reflective.
- Example conductors for this application include, but are not limited to, gold, iridium, molybdenum, palladium, and platinum.
- Typical anode materials, transmissive or otherwise, have a work function higher than 4.0 eV. Desired anode materials are commonly deposited by any suitable means such as evaporation, sputtering, chemical vapor deposition, or electrochemical means.
- Anodes can be patterned using well-known photolithographic processes.
- anodes may be polished prior to application of other layers to reduce surface roughness so as to minimize electrical shorts or enhance reflectivity.
- HIL in the first organic EL unit to contact the anode 110 .
- the HIL can serve to improve the film formation property of subsequent organic layers and to facilitate injection of holes into the HTL reducing the driving voltage of the cascaded OLED.
- Suitable materials for use in the HIL include, but are not limited to, porphyrinic compounds as described in U.S. Pat. No. 4,720,432, plasma-deposited fluorocarbon polymers as described in U.S. Pat. No. 6,208,075, and some aromatic amines, for example, m-MTDATA (4,4′,4′′-tris[(3-ethylphenyl)phenylamino]triphenylamine).
- a p-type doped organic layer for use in the aforementioned connecting unit is also useful for the HIL as described in U.S. Pat. No. 6,423,429 B2.
- Alternative hole-injecting materials reportedly useful in organic EL devices are described in EP 0 891 121 A1 and EP 1 029 909 A1.
- the emission spectrum of a white-light emitting OLED made by applicant is shown. While this is a relatively efficient white-light emitting material, it can be seen that most of the energy in the spectrum is cyan (peak 200 ) and yellow (peak 202 ). When combined with red, green, and blue color filters, the amount of light emitted through the filters of the desired color will be relatively low. In particular, the green emission (peak 204 ) and red emission (peak 206 ) are relatively low.
- the present invention can provide a higher efficiency full-color OLED device by providing a cascaded RGB architecture having a common control for all light-emitting units in the stack, where white light is generated by each pixel and filtered using RGB filters.
- RGB filters This simplifies manufacturing because it is generally easier to apply a RGB filter after OLED device fabrication than to pattern RGB emitting pixels.
- some of the light emitting units may be less efficient, they may need to be driven harder to provide comparable levels of light to produce, for example, a white or gray color. This may cause the less efficient materials to age more rapidly, thereby causing color differential aging and a color-OLED device whose white point will change over time and whose luminance will decrease. In a preferred embodiment of the invention, this may be addressed by differential sizing of the independent controlled light emitting areas and corresponding differentially colored filters.
- a set of four materials developed by applicant may have efficiencies as listed in the table below: Color Efficiency (cd/A) Relative Size White 13 Green 28 1 Red 9 3.1 Blue 6 4.7
- the relative light-emitting efficiency of the various color light emitters varies. If all of the light emitting pixels were of the same size and the color filters were of equal efficiency over the output bandwidth of the light emitters, the green light would be much brighter because it is more efficient and the blue light would be dimmer because it is less efficient.
- the relative efficiency of the light-emitting materials and the associated color filter can be accommodated by creating anodes and color filters of relatively different sizes corresponding to the relative efficiencies.
- the more efficient units will have smaller associated color filters and anodes, the less efficient units will have larger color filter and anodes.
- the green filter is smallest and the blue filter is largest.
- the relative sizes of the anodes and associated color filters are 1 for green, 3.1 for red, and 4.7 for blue.
- the relative sizes of the anodes and associated color filters should reflect the relative efficiency of the light emitting units in combination with the color filters.
- the relative sizes of the anodes and associated color filters may reflect the relative aging and lifetime of the light emitting units.
- filters 124 - 126 may be a conventional color filter array such as is used in the liquid crystal display industry composed of light-absorbent material that only permits the desired color of light to pass through.
- the frequency of light passed through the filter from the stack 120 of light emitting units should match the emission spectrum of the light from the corresponding desired unit. For example, the light transmitted by a green filter should match the emission of the green light emitting unit.
- both the emission of the light emitting units and the color filters will be as narrow as possible. This will optimize the power emitted through the color filters while providing an improved color gamut. Moreover, a narrow emission spectrum will provide improved contrast to the OLED device by absorbing more of the ambient light.
- the OLED device has three light-emitting layers, e.g., one each for red, green, and blue. However, it is also possible to combine a color emitter with a broadband emitter and utilize only two light emitting units. As noted above, the white-light emitting material that produces the spectrum illustrated in FIG. 2 is very deficient in green light emission.
- An OLED device according to another embodiment of the present invention can have a white-light emitting unit in combination with a green-light emitting unit, as illustrated in FIG. 3 . This arrangement reduces the number of light-emitting units while providing improved light output over a single, white-light emitting unit.
- the green color filter 126 permits green light 129 from both the green unit 123 and the white unit 170 to pass while absorbing the blue and red light from the white unit 170 .
- the red light 128 emitted from the white unit 170 will pass through the red color filter 125 while blocking the green light emitted from the green light-emitting unit 123 and blue light from the white-light emitting unit 170 .
- the blue light 127 emitted from the white unit 170 will pass through the blue color filter 124 while blocking the green light emitted from the green light-emitting unit 123 and red light from the white-light emitting unit 170 .
- a plurality of combinations of light-emitting units having different colors may be employed.
- organic EL units in addition to red, green and blue that can be used to yield light that appears white.
- two-layer structures that emit blue and yellow light, or that emit red and cyan light, or that emit green and magenta light, can be used to generate white light. In all cases these units can be combined multiple times.
- any combination of colored-light and white-light emitting units that provide improved efficiency of output may be included in the present invention. Applicant has found that a variety of solutions for various applications may be possible that include various color filters combined with OLED materials to provide a good color gamut and efficiency.
- the present invention may also be employed in an RGBW configuration, that is, one that has four light-emitting pixels, one each for red, green, blue, and white.
- the white pixel need not have any filter at all, or may only have a filter necessary to achieve the desired white point of the OLED device. It is also possible to provide two layers that emit the same color of light; this technique can be used to optimize the color balance of the white emitter or the relative amount of light emitted by the various colors.
- the order of layer deposition may be controlled to optimize the structure of the present invention to improve performance.
- Applicant has demonstrated that the organic materials within an OLED are themselves light absorbing. Hence, some of the light emitted from the bottom of a stack (the side farthest from the side from which light is emitted from an OLED) will be absorbed by layers above it. Therefore, it is useful to put the most efficient emitter or the one that emits light that is least absorbed by the other layers at the bottom. In the example cited above, green is the most efficient and thus may be advantageously placed at the bottom of the stack. Likewise, models of the light absorption in the various organic layers indicate that blue light is absorbed most readily, so that the blue light-emitting unit may be located at the top of the stack, as illustrated in FIG. 1 .
- the present invention provides improved manufacturability of a color OLED device by enabling unpatterned deposition of organic materials onto the substrate. No masking is needed because all of the layers are deposited across the entire light emitting area of the substrate. Moreover, improved efficiency over the use of a conventional white-light emitting OLEDs may be obtained by providing an output spectrum for each of the colors that is closely matched to its associated color filter.
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Abstract
An OLED device is described comprising a substrate having thereon a cascaded organic electroluminescent device comprising: a) an anode; b) a cathode; c) a plurality of cascaded organic electroluminescent units disposed between the anode and the cathode, wherein each organic electroluminescent unit includes at least one light-emitting layer and wherein the plurality of cascaded units includes at least two units that emit light of different colors; and d) a connecting unit disposed between each adjacent cascaded organic electroluminescent unit; and e) a colored filter that filters the emitted light.
Description
- This application is a continuation-in-part of copending, commonly assigned U.S. patent application Ser. No. 10/077,270 filed Feb. 15, 2002 by Liang-Sheng L. Liao et al., entitled “Providing an Organic Electroluminescent Device Having Stacked Electroluminescent Units”, the disclosure of which is herein incorporated by reference. Reference is also made to copending, commonly assigned U.S. Ser. Nos. 10/437,195 and 10/845,038, the disclosures of which are also incorporated by reference herein.
- The present invention relates to providing a OLED device having a plurality of organic electroluminescent (EL) units in the form of a cascaded organic electroluminescent device with color filters.
- Organic electroluminescent (EL), or organic light-emitting diode (OLED), devices are electronic devices that emit light in response to an applied potential. The structure of an OLED comprises, in sequence, an anode, an organic EL medium, and a cathode. The organic EL medium disposed between the anode and the cathode is commonly comprised of an organic hole-transporting layer (HTL) and an organic electron-transporting layer (ETL). Holes and electrons recombine and emit light in the ETL near the interface of HTL/ETL. Tang et al., “Organic electroluminescent diodes”, Applied Physics Letters, 51, 913 (1987), and commonly assigned U.S. Pat. No. 4,769,292, demonstrated highly efficient OLEDs using such a layer structure. Since then, numerous OLEDs with alternative layer structures have been disclosed. For example, there are three-layer OLEDs that contain an organic light-emitting layer (LEL) between the HTL and the ETL, such as that disclosed by Adachi et al., “Electroluminescence in Organic Films with Three-Layer Structure”, Japanese Journal of Applied Physics, 27, L269 (1988), and by Tang et al., “Electroluminescence of doped organic thin films”, Journal of Applied Physics, 65, 3610 (1989). The LEL commonly includes of a host material doped with a guest material wherein the layer structures are denoted as HTL/LEL/ETL. Further, there are other multilayer OLEDs that contain a hole-injecting layer (HIL), and/or an electron-injecting layer (EIL), and/or a hole-blocking layer, and/or an electron-blocking layer in the devices. These structures have further resulted in improved device performance.
- Color, digital image display devices are well known and are based upon a variety of technologies such as cathode ray tubes, liquid crystal and solid-state light emitters such as Organic Light Emitting Diodes (OLEDs). In a common OLED color display device a pixel includes red, green, and blue colored OLEDs. By combining the illumination from each of these three OLEDs in an additive color system, a full-color display having a wide variety of colors can be achieved.
- OLEDs may be used to generate color directly using organic materials that are doped to emit energy in desired portions of the electromagnetic spectrum. However, to create a color OLED device using different organic materials requires the patterning of these materials over the surface of the OLED device substrate. This patterning is a difficult and problematic task, especially for large substrates, for example substrates having a diagonal greater than about 50 cm. An alternative method utilizes a white-light emitting material in combination with color filter arrays to provide color emission, much as conventional LCD displays do. White-light emitting OLED devices that are known in the art are typically formed by doping multiple, individual emitting layers such that each doped layer produces light within a specific spectral frequency band. White-light emitting devices may be formed from either two or three individual emitting materials. However, this approach suffers from efficiency problems because the white light emitters tend to be relatively broadband so that most of the light emitted by the white-light emitter is absorbed by the color filters, reducing the efficiency of the OLED device. Additionally, some of the white light emitters may age more rapidly than other due to the relative efficiencies for which they emit different colors.
- In order to further improve the performance of the OLEDs, a new kind of OLED structure called stacked OLED, which is fabricated by stacking several individual OLED vertically, has also been proposed. Forrest et al. in U.S. Pat. No. 5,703,436 and Burrows et al. in U.S. Pat. No. 6,274,980 disclosed their stacked OLEDs. In their inventions, the stacked OLEDs are fabricated by vertically stacking several OLEDs, each independently emitting light of a different color or of the same color. Using their stacked OLED structure can make full color emission devices with higher integrated density in the display, but each OLED needs a separate power source. In an alternative design, Jones et al. in U.S. Pat. No. 6,337,492 proposed a stacked OLED structure by vertically stacking several OLED without individually addressing each OLED in the stack. Jones et al. believe that their stacked structure could increase the luminance output and operational lifetime. These OLEDs use individual OLEDs (anode/organic medium/cathode) as building blocks to fabricate the stacked OLEDs. The complex architecture in these designs presents serious fabrication problems for patterned multi-colored display devices. Moreover, these designs do not address inefficiencies of white light emitters in combination with color filters, or the consequent differential aging associated with differential efficiencies. This reduces the overall device efficiency.
- There is a need therefore, for an improved OLED device structure providing simplicity of manufacture with efficiency of operation.
- In accordance with one embodiment, the present invention is directed towards an OLED device comprising a substrate having thereon a cascaded organic electroluminescent device comprising: a) an anode; b) a cathode; c) a plurality of cascaded organic electroluminescent units disposed between the anode and the cathode, wherein each organic electroluminescent unit includes at least one light-emitting layer and wherein the plurality of cascaded units includes at least two units that emit light of different colors; and d) a connecting unit disposed between each adjacent cascaded organic electroluminescent unit; and e) a colored filter that filters the emitted light.
- Various embodiments of the present invention provide color OLED devices with simplified manufacturing, improved efficiency, and reduced aging.
-
FIG. 1 depicts a schematic cross sectional view of a cascaded OLED device according to the present invention; -
FIG. 2 depicts the emission spectrum of a white-light emitting OLED; and -
FIG. 3 depicts a schematic cross sectional view of an alternative cascaded OLED device according to the present invention. - It will be understood that
FIGS. 1 and 3 are not to scale since the individual layers are too thin and the thickness differences of various layers too great to permit depiction to scale. - The layer structure of a cascaded OLED (or stacked OLED) comprises an anode, a cathode, a plurality of organic EL units and a plurality of organic connectors (or connecting units thereafter), wherein each of the connecting units is disposed between two organic EL units. The organic EL unit includes at least one light-emitting layer, and typically comprises, in sequence, a hole-transport layer, a light-emitting layer, and an electron-transport layer, denoted in brief as HTL/LEL/ETL.
- To function efficiently, the connecting unit for the cascaded OLED should provide electron injection into the electron-transporting layer and hole injection into the hole-transporting layer of the two adjacent organic EL units. A variety of materials may be used to form the connecting units. In preferred embodiments, connecting unit materials are selected to provide high optical transparency and excellent charge injection, thereby providing the cascaded OLED high electroluminescence efficiency and operation at an overall low driving voltage.
- The connecting unit may comprise doped organic connectors provided between adjacent organic EL units. Each doped organic connector may include at least one n-type doped organic layer, or at least one p-type doped organic layer, or a combination of layers, thereof. Preferably, the doped organic connector includes both an n-type doped organic layer and a p-type doped organic layer disposed adjacent to one another to form a p-n heterojunction. It is also preferred that the n-type doped organic layer is disposed towards the anode side, and the p-type doped organic layer is disposed towards the cathode side. The choice of using n-type doped organic layer, or a p-type doped organic layer, or both (the p-n junction) is in part dependent on the organic materials that include the organic EL units. Each connector can be optimized to yield the best performance with a particular set of organic EL units. This includes choice of materials, layer thickness, modes of deposition, and so forth.
- An n-type doped organic layer means that the organic layer has semiconducting properties after doping, and the electrical current through this layer is substantially carried by the electrons. A p-type doped organic layer means that the organic layer has semiconducting properties after doping, and the electrical current through this layer is substantially carried by the holes. A p-n heterojunction means an interfacial region (or junction) formed when a p-type layer and an n-type layer contact each other.
- N-type doped organic layers may include a host organic material and at least one n-type dopant. The host material in the n-typed doped organic layer can include a small molecule material or a polymeric material, or combinations thereof, and it is preferred that it can support electron transport. The p-type doped organic layers may include a host organic material and at least one p-type dopant. The host material can include a small molecule material or a polymeric material, or combinations thereof, and it is preferred that it can support hole transport. In some instances, the same host material can be used for both n-typed and p-type doped organic layers, provided that it exhibits both hole and electron transport properties set forth above. The n-type doped concentration or the p-type doped concentration is preferably in the range of 0.01-10 vol. %. The total thickness of each doped organic connector is typically less than 100 nm, and preferably in the range of about 1 to 100 nm.
- The organic electron-transporting materials used in conventional OLED devices represent a useful class of host materials that may be employed for the n-type doped organic layer. Preferred materials are metal chelated oxinoid compounds, including chelates of oxine itself (also commonly referred to as 8-quinolinol or 8-hydroxyquinoline), such as tris(8-hydroxyquinoline) aluminum. Other materials include various butadiene derivatives as disclosed by Tang (U.S. Pat. No. 4,356,429), various heterocyclic optical brighteners as disclosed by Van Slyke and Tang and others (U.S. Pat. No. 4,539,507), triazines, hydroxyquinoline derivatives, and benzazole derivatives. Silole derivatives, such as 2,5-bis(2′,2″-bipridin-6-yl)-1,1-dimethyl-3,4-diphenyl silacyclopentadiene as reported by Murata and others [Applied Physics Letters, 80, 189 (2002)], are also useful host materials.
- Materials useful as n-type dopants in the n-type doped organic layer of a doped organic connector include metals or metal compounds having a work function less than 4.0 eV. Particularly useful dopants include alkali metals, alkali metal compounds, alkaline earth metals, and alkaline metal compounds. The term “metal compounds” includes organometallic complexes, metal-organic salts, and inorganic salts, oxides and halides. Among the class of metal-containing n-type dopants, Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, La, Ce, Sm, Eu, Th, Dy, or Yb, and their compounds, are particularly useful. Materials useful as n-type dopants in the n-type doped organic layer of a doped organic connector also include organic reducing agents with strong electron-donating properties. By “strong electron-donating properties” we mean that the organic dopant should be able to donate at least some electronic charge to the host to form a charge-transfer complex with the host. Non-limiting examples of organic molecules include bis(ethylenedithio)-tetrathiafulvalene (BEDT-TTF), tetrathiafulvalene (TTF), and their derivatives. In the case of polymeric hosts, the dopant can be any of the above or also a material molecularly dispersed or copolymerized with the host as a minor component.
- The hole-transporting materials used in conventional OLED devices represent a useful class of host materials for p-type doped organic layers. Preferred materials include aromatic tertiary amines having at least one trivalent nitrogen atom that is bonded only to carbon atoms, at least one of which is a member of an aromatic ring. In one form the aromatic tertiary amine can be an arylamine, such as a monoarylamine, diarylamine, triarylamine, or a polymeric arylamine. Other suitable triarylamines substituted with one or more vinyl radicals and/or comprising at least one active hydrogen-containing group are disclosed by Brantley and others (U.S. Pat. No. 3,567,450 and U.S. Pat. No. 3,658,520). A more preferred class of aromatic tertiary amines are those which include at least two aromatic tertiary amine moieties as described by Van Slyke and Tang and others (U.S. Pat. No. 4,720,432 and U.S. Pat. No. 5,061,569). Non-limiting examples include as N,N′-di(naphthalene-1-yl)-N,N′-diphenyl-benzidine (NPB) and N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1-biphenyl-4,4′-diamine (TPD), and N,N,N′,N′-tetranaphthyl-benzidine (TNB).
- Materials useful as p-type dopants in p-type doped organic layers of doped organic connectors include oxidizing agents with strong electron-withdrawing properties. By “strong electron-withdrawing properties” we mean that the organic dopant should be able to accept some electronic charge from the host to form a charge-transfer complex with the host. Some non-limiting examples include organic compounds such as 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) and other derivatives of TCNQ, and inorganic oxidizing agents such as iodine, FeCl3, SbCl5, and some other metal chlorides. In the case of polymeric hosts, the dopant can be any of the above or also a material molecularly dispersed or copolymerized with the host as a minor component.
- Examples of materials that can be used as host for either n-type or p-type doped organic layers include, but are not limited to: various anthracene derivatives including those described in U.S. Pat. No. 5,972,247; certain carbazole derivatives, such as 4,4-bis(9-dicarbazolyl)-biphenyl (CBP); and distyrylarylene derivatives such as 4,4′-bis(2,2′-diphenyl vinyl)-1,1′-biphenyl and as described in U.S. Pat. No. 5,121,029.
- The materials used for fabricating doped organic connectors are preferably substantially transparent to emitted light.
- In a preferred embodiment, the connecting unit comprises, in sequence, an n-type doped organic layer and a p-type doped organic layer. Thus, in this structure, the ETL of the EL unit is adjacent to the n-type doped layer of the connecting unit and the HTL of the EL unit is adjacent to the p-type doped connecting unit. In this cascaded device structure only a single external power source is needed to connect to the anode and the cathode with the positive potential applied to the anode and the negative potential to the cathode. No other electrical connections are needed to connect the individual organic EL units to external electrical power sources.
- In a further specific cascaded OLED device embodiment, the physical spacing between adjacent electroluminescent zones may be more than 90 nm and the connecting unit disposed between each adjacent organic electroluminescent unit may comprise an n-type doped organic layer and a p-type doped organic layer forming a transparent p-n junction structure wherein the resistivity of each of the doped layers is higher than 10 i-cm, as described in commonly assigned U.S. patent application Ser. No. 10/437,195 filed May 13, 2003 entitled “Cascaded Organic Electroluminescent Device Having Connecting Units with n-Type and p-Type Organic Layers”, the disclosure of which is herein incorporated by reference.
- For a cascaded OLED to function efficiently, it is necessary that the optical transparency of the layers constituting the organic EL units and the connecting units be as high as possible to allow for radiation generated in the organic EL units to exit the device. Furthermore, for the radiation to exit through the anode, the anode should be transparent and the cathode can be opaque, reflecting, or transparent. For the radiation to exit through the cathode, the cathode should be transparent and the anode can be opaque, reflecting or transparent. The layers constituting the organic EL units are generally optically transparent to the radiation generated by the EL units, and therefore their transparency is generally not a concern for the construction for the cascaded OLEDs.
- The operational stability of cascaded OLED is dependent to a large extent on the stability of the connecting units. In particular, the driving voltage will be highly dependent on whether or not the connecting unit can provide the necessary electron and hole injection. It is generally known that the close proximity of two dissimilar materials may result in diffusion of matters from one into another, or in interdiffusion of matters across the boundary between the two. In the case of cascaded OLEDs employing an n-type doped organic layer and a p-type doped organic layer, if such diffusion were to occur in the connecting unit between the n-type doped organic layer and the p-type doped organic layer, the injection properties of this organic connecting unit may degrade correspondingly due to the fact that the individual n-type doped layer or p-type doped layer may no longer be sufficiently electrically conductive. Diffusion or interdiffusion is dependent on temperature as well as other factors such as electrical field induced migration. The latter is plausible in cascaded OLED devices since the operation of OLED generally requires an electric field as high as 106 volt per centimeter. To prevent such an operationally induced diffusion in the connecting units of a cascaded OLED, an interfacial layer which provides a barrier for interfusion may be introduced in between the n-type doped layer and the p-type doped layer, as described in U.S. Pat. No. 6,717,358, the disclosure of which is incorporated herein by reference.
- Interfacial layers useful in the connecting unit may comprise at least one inorganic semiconducting material or combinations of more than one of the semiconducting materials. Suitable semiconducting materials should have an electron energy band gap less than 4.0 eV. The electron energy band gap is defined as the energy difference between the highest occupied molecular orbital and the lowest unoccupied molecular orbital of the molecule. A useful class of materials can be chosen from the compounds of elements listed in groups IVA, VA, VIA, VIIA, VIIIA, IB, IIB, IIIB, IVB, and VB in the Periodic Table of the Elements (e.g. the Periodic Table of the Elements published by VWR Scientific Products). These compounds include the carbides, silicides, nitrides, phosphides, arsenides, oxides, sulfides, selenides, and tellurides, and mixture thereof. These semiconducting compounds can be in either stoichoimetic or non-stoichiometic states, that is they may contain excess or deficit metal component. Particularly useful materials for the interfacial layer are the semiconducting oxides of titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, rhenium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, zinc, cadmium, gallium, thallium, silicon, germanium, lead, and antimony, or combinations thereof. Particularly useful materials for the interfacial layer also including zinc selenide, gallium nitride, silicon carbide, or combinations thereof.
- The interfacial layer useful in a connecting unit also can comprise at least one or more metallic materials, where at least one of these metallic materials has a work-function higher than 4.0 eV as listed by Sze, in Physics of Semiconducting Devices, 2nd Edition, Wiley, N.Y., 1981, p. 251. The thickness of an interfacial layer suitable for the construction of a connecting unit is preferably in the range of 0.05 nm to 10 μm, more preferably between 0.1 nm to 5 nm for inorganic semiconducting materials and between 0.05 nm to 1 nm for metallic materials.
- In a further embodiment, the connecting unit disposed between each adjacent organic electroluminescent unit in the cascaded device may include at least a high work function metal layer having a work function of no less than 4.0 eV and a metal compound layer, wherein the intermediate connector has a sheet resistance of higher than 100 kΩ per square, such as described in copending, commonly assigned U.S. Ser. No. 10/857,516, filed May 28, 2004, the disclosure of which is incorporated herein y reference. The use of such high work function metal layer in a connecting unit of a cascaded OLED device improves the operational stability of the OLED.
- As discussed above, for a cascaded OLED to function efficiently, it is necessary that the intermediate connector should provide good carrier injection into the adjacent organic EL units. Due to their lower resistivity than that of organic materials, metals, metal compounds, or other inorganic compounds can be good for carrier injection. However, low resistivity can cause low sheet resistance resulting in pixel crosstalk. If the lateral current passing through the adjacent pixels to cause pixel crosstalk is limited to less than 10% of the current used to drive a pixel, the lateral resistance of the intermediate connector (Ric) should be at least 8 times the resistance of the cascaded OLED. Usually, the static resistance between two electrodes of a conventional OLED is about several kΩs, and a cascaded OLED should have a resistance of about 10 kΩ or several 10 kΩs between the two electrodes. Therefore Ric should be greater than 100 kΩ. Considering the space between each pixel is smaller than one square, the sheet resistance of the intermediate connector should be then greater than 100 kΩ per square (lateral resistance equals to sheet resistance times the number of square). Because the sheet resistance is determined by both the resistivity and the thickness of the films (sheet resistance equals to film resistivity divided by film thickness), when the layers constituting an intermediate connector are selected from metals, metal compounds, or other inorganic compounds having low resistivity, a sheet resistance of the intermediate connector greater than 100 kΩ per square can still be achievable if the layers are thin enough.
- Another requirement for the tandem OLED to function efficiently is that the optical transparency of the layers constituting the organic EL units and the intermediate connectors be as high as possible to permit for radiation produced in the organic EL units to exit the device. According to a simple calculation, if the optical transmission of each intermediate connector is 70% of the emitting light, a tandem OLED will not have much benefit because no matter how many EL units there are in the device, the electroluminance efficiency can never be doubled when comparing to a conventional device. The layers constituting the organic EL units are generally optically transparent to the radiation produced by the EL units, and therefore their transparency is generally not a concern for the construction of the tandem OLEDs. As is known, metals, metal compounds, or other inorganic compounds can have low transparency. However, when the layers constituting an intermediate connector are selected from the metals, metal compounds, or other inorganic compounds, an optical transmission higher than 70% can still be achievable if the layers are thin enough. Preferably, the intermediate connector has at least 75% optical transmission in the visible region of the spectrum.
- In accordance with one specific embodiment, the intermediate connectors may comprise, in sequence, a low work function metal layer, a high work function metal layer, and a metal compound layer. Herein, a low work function metal is defined as a metal having a work function less than 4.0 eV. Likewise, a high work function metal is defined as a metal having a work function no less than 4.0 eV. The low work function metal layer is preferably disposed adjacent to the ETL of an organic EL unit towards the anode side, and the metal compound layer is preferably disposed adjacent to the HTL of another organic EL unit towards the cathode side. The low work function metal layer may be selected to provide efficient electron injection into the adjacent electron-transporting layer. The metal compound layer may be selected to provide efficient hole injection into the adjacent hole-transporting layer. Preferably, the metal compound layer comprises, but is not limited to, a p-type semiconductor. The high work function metal layer is selected to improve the operational stability of the OLED by preventing a possible interaction or interdiffusion between the low work function layer and the metal compound layer.
- In accordance with another specific embodiment, the intermediate connectors may comprise, in sequence, an n-type semiconductor layer, a high work function metal layer, and a metal compound layer. The n-type semiconductor layer is preferably disposed adjacent to the ETL of an organic EL unit towards the anode side, and the metal compound layer is preferably disposed adjacent to the HTL of another organic EL unit towards the cathode side. Herein, an n-type semiconductor layer means that the layer is electrically conductive having electrons as the major charge carriers. Likewise, a p-type semiconductor layer means that the layer is electrically conductive having holes as the major charge carriers. Similar to a low work function metal layer, the n-type semiconductor layer may be selected to provide efficient electron injection into the adjacent electron-transporting layer. The metal compound layer again may be selected to provide efficient hole injection into the adjacent hole-transporting layer, and the high work function metal layer is selected to improve the operational stability of the OLED by preventing a possible interaction or interdiffusion between the n-type semiconductor layer and the metal compound layer.
- In the case such that the ETL in the EL unit is an n-type doped organic layer, the layer structure of the intermediate connector can be simplified by comprising, in sequence, a high work function metal layer disposed adjacent to the n-type doped ETL of an organic EL unit towards the anode side, and a metal compound layer disposed adjacent to the HTL of another organic EL unit towards the cathode side. The metal compound layer may be selected to provide efficient hole injection into the adjacent hole-transporting layer, and the high work function metal layer is selected to improve the operational stability of the OLED by preventing a possible interaction or interdiffusion between the n-type doped ETL and the metal compound layer. Herein, an n-type doped organic layer means that the layer is electrically conductive, and the charge carriers are primarily electrons. The conductivity is provided by the formation of a charge-transfer complex as a result of electron transfer from the dopant to the host material. Depending on the concentration and the effectiveness of the dopant in donating an electron to the host material, the layer electrical conductivity can change by several orders of magnitude. With an n-type doped organic layer as an ETL in the EL unit, electrons can be efficiently injected from the adjacent intermediate connector into the ETL.
- In order for the intermediate connectors to have good optical transmission (at least 75% optical transmission in the visible region of the spectrum), good carrier injection capability, and good operational stability, the thickness of the layers in the intermediate connectors has to be carefully considered. The thickness of the low work function metal layer, when employed, in the intermediate connectors is preferably in the range of from 0.1 nm to 5.0 nm, more preferably in the range of from 0.2 nm to 2.0 nm. The thickness of the high work function metal layer, when employed, in the intermediate connectors is preferably in the range of from 0.1 nm to 5.0 nm, more preferably in the range of from 0.2 nm to 2.0 nm. The thickness of the metal compound layer, when employed, in the intermediate connectors is preferably in the range of from 0.5 nm to 20 nm, more preferably in the range of from 1.0 nm to 5.0 nm. The thickness of the n-type semiconductor layer, when employed, in the intermediate connectors is preferably in the range of from 0.5 nm to 20 nm, more preferably in the range of from 1.0 nm to 5.0 nm.
- The materials used for the fabrication of intermediate connectors are basically selected from nontoxic materials. Low work function metal layers may include, e.g., Li, Na, K, Rb, Cs, Mg, Ca, Sr, Ba, La, Ce, Nd, Sm, Eu, Th, Dy, or Yb. Preferably, the low work function metal layer includes Li, Na, Cs, Ca, Ba, or Yb. High work function metal layers may include, e.g., Ti, Zr, Ti, Nb, Ta, Cr, Mo, W, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt. Cu, Ag, Au, Zn, Al, In, or Sn. Preferably, the high work function metal layer includes Ag, Al, Cu, Au, Zn, In, or Sn. More preferably, the high work function metal layer includes Ag or Al.
- The metal compound layer, when employed, can be selected from the stoichiometric oxides or nonstoichiometric oxides of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, tungsten, manganese, iron, ruthenium, rhodium, iridium, nickel, palladium, platinum, copper, zinc, silicon, or germanium, or combinations thereof. The metal compound layer can be selected from the stoichiometric sulfides or nonstoichiometric sulfides of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, tungsten, manganese, iron, ruthenium, rhodium, iridium, nickel, palladium, platinum, copper, silicon, or germanium, or combinations thereof. The metal compound layer can be selected from the stoichiometric selenides or nonstoichiometric selenides of titanium, zirconium, hafiium, niobium, tantalum, molybdenum, tungsten, manganese, iron, ruthenium, rhodium, iridium, nickel, palladium, platinum, copper, silicon, or germanium, or combinations thereof. The metal compound layer can be selected from the stoichiometric tellurides or nonstoichiometric tellurides of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, tungsten, manganese, iron, ruthenium, rhodium, iridium, nickel, palladium, platinum, copper, silicon, or germanium, or combinations thereof. The metal compound layer can be selected from the stoichiometric nitrides or nonstoichiometric nitrides of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, tungsten, manganese, iron, ruthenium, rhodium, iridium, nickel, palladium, platinum, copper, zinc, gallium, silicon, or germanium, or combinations thereof. The metal compound layer can also be selected from the stoichiometric carbides or nonstoichiometric carbides of titanium, zirconium, hafnium, niobium, tantalum, molybdenum, tungsten, manganese, iron, ruthenium, rhodium, iridium, nickel, palladium, platinum, copper, zinc, aluminum, silicon, or germanium, or combinations thereof. The metal compound layer can be selected from MoO3, NiMoO4, CuMoO4, WO3, ZnTe, Al4C3, AIF3, B2S3, CuS, GaP, InP, or SnTe. Preferably, the metal compound layer is selected from MoO3, NiMoO4, CuMoO4, or WO3.
- The n-type semiconductor layer, when employed, may include, e.g., ZnSe, ZnS, ZnSSe, SnSe, SnS, SnSSe, LaCuO3, or La4Ru6O19. Preferably, the n-type semiconductor layer includes ZnSe or ZnS.
- Other intermediate connector materials may also be employed in the OLED cascaded devices of the present invention. For example, Tanaka et al., U.S. Pat. No. 6,107,734, demonstrated a 3-EL-unit OLED using In—Zn—O (IZO) films or Mg:Ag/IZO films as intermediate connectors and achieved a luminous efficiency of 10.1 cd/A from pure tris(8-hydroxyquinoline)aluminum emitting layers. Kido et al. U.S. Patent Publication 2003/0189401 A1 discloses the use of light-emissive units partitioned from each other by at least one charge generation layer, the charge generation layer constituting an electrically insulating layer having a resistivity of not less than 1.0×10 2 Ωcm. Kido et al., “High Efficiency Organic EL Devices having Charge Generation Layers”, SID 03 Digest, 964 (2003), fabricated 3-EL-unit OLEDs using In—Sn—O (ITO) films or V2O5 films as intermediate connectors and achieved a luminous efficiency of up to 48 cd/A from fluorescent dye doped emitting layers. The disclosures of the above references with respect to intermediate connector materials are herein incorporated by reference.
- The intermediate connectors layers, including interfacial layers, can be produced, e.g., by thermal evaporation, electron beam evaporation, or ion sputtering technique. Preferably, the intermediate connectors are fabricated from materials which allow for a thermal evaporation method for the deposition of all the materials in the fabrication of the cascaded OLED, including the intermediate connectors.
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FIG. 1 shows a cascaded bottom emittingOLED device 100 in accordance with one embodiment of the present invention. This cascaded OLED has a plurality of independently controlledanodes 110 located over asubstrate 105 and acommon cathode 140, at least one of which is transparent. Disposed between the anode and the cathode are astack 120 of threeorganic EL units Unit 121 is the first EL unit (adjacent to the anode) and 123 is the third unit (adjacent to the cathode).EL unit 122 is an intermediate organic EL unit disposed betweenunit unit 130. Eachanode 110 in the cascadedOLED 100 is externally connected to a voltage/current source 150 throughelectrical conductors 160 and can be individually powered to provide current for the associated light emitters, typically through either a passive-matrix or active-matrix control scheme. - The number of the organic EL units in the cascaded OLED is in principle equal to or more than 2. Preferably, the number of the organic EL units in the stacked OLED is such that the luminance efficiency in units of cd/A is improved or maximized. In further preferred embodiments, three or more cascaded organic EL units providing independent optical emission peaks may be employed to provide a white emission having a combination of relatively narrow band emitters rather than a single broad-band white light emission.
- According to the present invention,
EL units red light 128,green light 129, andblue light 127. The plurality of cascaded organic electroluminescent units are disposed between a plurality ofanodes 110 and acommon cathode 140. Each of the plurality of anodes defines an independently controlled light-emitting area of the OLED device. Each independently controlled light-emitting area is associated with acomplementary color filter -
Cascaded OLED 100 is operated by applying an electric potential generated by a voltage/current source 150 between a pair of contact electrodes,anodes 110 andcathode 140, such thatanode 110 is at a more positive potential with respect to thecathode 140. This externally applied electrical potential is distributed among the three organic EL units in proportion to the electrical resistance of each of these units. The electric potential across the cascaded OLED causes holes (positively charged carriers) to be injected fromanodes 110 into the firstorganic EL unit 121, and electrons (negatively charged carriers) to be injected fromcathode 140 into the thirdorganic EL unit 123. Simultaneously, electrons and holes are generated in, and separated from, each of the connectingunits 130. Electrons thus generated in a connectingunit 130 are injected towards the anode and into the adjacent organic EL unit. Likewise, holes generated in a connectingunit 130 are injected towards the cathode and into the adjacent organic EL unit. Subsequently, these electrons and holes recombine in their corresponding organic EL units to produce light, which is observed via the transparent electrode or electrodes of the OLED through thecorresponding color filter organic EL unit 123 to the firstorganic EL unit 121, and emit light in each of the organic EL units. Therefore, we prefer to use the term “cascaded OLED” instead of “stacked OLED” in the present invention. - Each organic EL unit in the cascaded
OLED 100 is capable of supporting hole and electron transport, and electron-hole recombination to produce light. Each organic EL unit can include a single layer or a plurality of layers. Organic EL multiplayer structures include HTL/ETL, HTL/LEL/ETL, HIL/HTL/LEL/ETL, HIL/HTL/LEL/ETL/EIL, HIL/HTL/electron-blocking layer or hole-blocking layer/LEL/ETL/EIL, HIL/HTL/LEL/hole-blocking layer/ETL/EIL. Organic EL unit can be formed from small molecule OLED materials or polymeric LED materials, both known in the art, or combinations thereof. There are many organic EL multilayer structures and materials known in the art that can be used as the organic EL unit of this invention. Each organic EL unit in the cascaded OLED device can be the same or different from other units. Some organic EL units can be polymeric LED and other units can be small molecule OLEDs. Each organic EL unit can be selected in order to optimize performance or achieve a desired attribute, for example light transmission through the OLED stack, driving voltage, luminance efficiency, light emission color, manufacturability, device stability, and so forth. - The layer structure of the organic EL unit adjacent to the anode preferably is of HIL/HTL/LEL/ETL, and the layer structure of the organic EL unit adjacent to the cathode preferably is of HTL/LEL/ETL/EIL, and the layer structure of the intermediate organic EL units preferably are of HTL/LEL/ETL. Connectors facilitate hole injection into the HTL of one organic EL unit and electron injection into ETL of the adjacent organic EL unit.
- Within each organic EL unit, the transport of the hole and electron carriers is supported by the HTL and ETL, respectively. The LEL may itself be an ETL. Recombination of the hole and electron carriers in the vicinity at or near the HTL/ETL interface within each organic EL unit causes light to be produced (electroluminescence). The HTL in each organic EL unit can be the same or different in terms of materials used, layer thickness, method of deposition, and so forth. The properties of the HTL in the device can be individually optimized to achieve the desired performance or feature, for example light transmission through the OLED stack, driving voltage, luminance efficiency, light emission color, manufacturability, device stability, and so forth. The same is true for the ETL and LEL. Although not necessary, it is preferable that a hole-injecting layer (HIL) be provided between the anode and the first HTL. It is also preferable, but not necessary, that an electron-injecting layer (EIL) be provided between the cathode and the last ETL. Both the HIL and EIL improve charge injection from the electrodes. Organic EL units can optionally include a HIL between a HTL and a doped organic connector. Similarly, organic EL units can optionally include an EIL between an ETL and a doped organic connector.
- In order to minimize driving voltage for the cascaded OLED, it is desirable to make each organic EL unit as thin as possible without compromising the electroluminescence efficiency. It is preferable that each organic EL unit is less than 500 nm thick, and more preferable that it be 2-200 nm thick. It is also preferable that each layer within the organic EL unit be 200 nm thick or less, and more preferable that it be 0.1-100 nm.
- The cascaded
OLED 100 of the present invention is typically provided over a supportingsubstrate 105 where either thecathode 140 oranode 110 can be in contact with thesubstrate 105. The electrode in contact with the substrate is conveniently referred to as the bottom electrode. Conventionally, the bottom electrode is the anode, but the present invention is not limited to that configuration. The substrate can either be light transmissive or opaque, depending on the intended direction of light emission. The light transmissive property is desirable for viewing the EL emission through the substrate (a bottom emitter configuration). Transparent glass or plastic is commonly employed in such cases. For applications where the EL emission is viewed through the top electrode (a top emitter), the transmissive characteristic of the bottom support is immaterial, and therefore can be light transmissive, light absorbing or light reflective. Substrates for use in this case include, but are not limited to, glass, plastic, semiconductor materials, silicon, ceramics, and circuit board materials. Of course, it is necessary to provide in these device configurations a light-transparent top electrode. In such a configuration, the color filters 124-126 may be provided over thecathode 140, any protective layers located over thecathode 140, or on an encapsulating cover (not shown) provided over the OLED materials and affixed to thesubstrate 105. - When EL emission is viewed through
anode 110, the anode should be transparent or substantially transparent to the emission of interest. Common transparent anode materials used in the present invention are indium-tin oxide (ITO), indium-zinc oxide (IZO) and tin oxide, but other metal oxides can work including, but not limited to, aluminum- or indium-doped zinc oxide, magnesium-indium oxide, and nickel-tungsten oxide. In addition to these oxides, metal nitrides, such as gallium nitride, and metal selenides, such as zinc selenide, and metal sulfides, such as zinc sulfide, can be used as the anode. For applications where EL emission is viewed only through the cathode electrode, the transmissive characteristics of anode are immaterial and any conductive material can be used, transparent, opaque or reflective. Example conductors for this application include, but are not limited to, gold, iridium, molybdenum, palladium, and platinum. Typical anode materials, transmissive or otherwise, have a work function higher than 4.0 eV. Desired anode materials are commonly deposited by any suitable means such as evaporation, sputtering, chemical vapor deposition, or electrochemical means. Anodes can be patterned using well-known photolithographic processes. Optionally, anodes may be polished prior to application of other layers to reduce surface roughness so as to minimize electrical shorts or enhance reflectivity. - While not always necessary, it is often useful to provide a HIL in the first organic EL unit to contact the
anode 110. The HIL can serve to improve the film formation property of subsequent organic layers and to facilitate injection of holes into the HTL reducing the driving voltage of the cascaded OLED. Suitable materials for use in the HIL include, but are not limited to, porphyrinic compounds as described in U.S. Pat. No. 4,720,432, plasma-deposited fluorocarbon polymers as described in U.S. Pat. No. 6,208,075, and some aromatic amines, for example, m-MTDATA (4,4′,4″-tris[(3-ethylphenyl)phenylamino]triphenylamine). A p-type doped organic layer for use in the aforementioned connecting unit is also useful for the HIL as described in U.S. Pat. No. 6,423,429 B2. Alternative hole-injecting materials reportedly useful in organic EL devices are described in EP 0 891 121 A1 and EP 1 029 909 A1. - Referring to
FIG. 2 , the emission spectrum of a white-light emitting OLED made by applicant is shown. While this is a relatively efficient white-light emitting material, it can be seen that most of the energy in the spectrum is cyan (peak 200) and yellow (peak 202). When combined with red, green, and blue color filters, the amount of light emitted through the filters of the desired color will be relatively low. In particular, the green emission (peak 204) and red emission (peak 206) are relatively low. - The present invention can provide a higher efficiency full-color OLED device by providing a cascaded RGB architecture having a common control for all light-emitting units in the stack, where white light is generated by each pixel and filtered using RGB filters. This simplifies manufacturing because it is generally easier to apply a RGB filter after OLED device fabrication than to pattern RGB emitting pixels. However, since some of the light emitting units may be less efficient, they may need to be driven harder to provide comparable levels of light to produce, for example, a white or gray color. This may cause the less efficient materials to age more rapidly, thereby causing color differential aging and a color-OLED device whose white point will change over time and whose luminance will decrease. In a preferred embodiment of the invention, this may be addressed by differential sizing of the independent controlled light emitting areas and corresponding differentially colored filters.
- To illustrate the advantages of a preferred embodiment of the present invention in a practical example, a set of four materials developed by applicant may have efficiencies as listed in the table below:
Color Efficiency (cd/A) Relative Size White 13 Green 28 1 Red 9 3.1 Blue 6 4.7
As can be seen from the table above, the relative light-emitting efficiency of the various color light emitters varies. If all of the light emitting pixels were of the same size and the color filters were of equal efficiency over the output bandwidth of the light emitters, the green light would be much brighter because it is more efficient and the blue light would be dimmer because it is less efficient. The relative efficiency of the light-emitting materials and the associated color filter can be accommodated by creating anodes and color filters of relatively different sizes corresponding to the relative efficiencies. The more efficient units will have smaller associated color filters and anodes, the less efficient units will have larger color filter and anodes. For example, as shown inFIG. 1 , the green filter is smallest and the blue filter is largest. Using the example of the materials cited in the table above, the relative sizes of the anodes and associated color filters are 1 for green, 3.1 for red, and 4.7 for blue. The relative sizes of the anodes and associated color filters should reflect the relative efficiency of the light emitting units in combination with the color filters. Alternatively, the relative sizes of the anodes and associated color filters may reflect the relative aging and lifetime of the light emitting units. Typically, the relative size of an independently controlled light-emitting area and associated color filter will be inversely related to the relative efficiency of light emission from or lifetime of the cascaded organic electroluminescent units. E.g., an efficient long-lived emitter will be relatively smaller than an inefficient short-lived emitter. As shown in the embodiment ofFIG. 1 , filters 124-126 may be a conventional color filter array such as is used in the liquid crystal display industry composed of light-absorbent material that only permits the desired color of light to pass through. The frequency of light passed through the filter from thestack 120 of light emitting units should match the emission spectrum of the light from the corresponding desired unit. For example, the light transmitted by a green filter should match the emission of the green light emitting unit. - For maximum benefit, both the emission of the light emitting units and the color filters will be as narrow as possible. This will optimize the power emitted through the color filters while providing an improved color gamut. Moreover, a narrow emission spectrum will provide improved contrast to the OLED device by absorbing more of the ambient light.
- As illustrated in
FIG. 1 , the OLED device has three light-emitting layers, e.g., one each for red, green, and blue. However, it is also possible to combine a color emitter with a broadband emitter and utilize only two light emitting units. As noted above, the white-light emitting material that produces the spectrum illustrated inFIG. 2 is very deficient in green light emission. An OLED device according to another embodiment of the present invention can have a white-light emitting unit in combination with a green-light emitting unit, as illustrated inFIG. 3 . This arrangement reduces the number of light-emitting units while providing improved light output over a single, white-light emitting unit. In this arrangement, thegreen color filter 126 permitsgreen light 129 from both thegreen unit 123 and thewhite unit 170 to pass while absorbing the blue and red light from thewhite unit 170. Thered light 128 emitted from thewhite unit 170 will pass through thered color filter 125 while blocking the green light emitted from the green light-emittingunit 123 and blue light from the white-light emitting unit 170. Theblue light 127 emitted from thewhite unit 170 will pass through theblue color filter 124 while blocking the green light emitted from the green light-emittingunit 123 and red light from the white-light emitting unit 170. - In general, a plurality of combinations of light-emitting units having different colors may be employed. There are many other combinations of organic EL units in addition to red, green and blue that can be used to yield light that appears white. For example, two-layer structures that emit blue and yellow light, or that emit red and cyan light, or that emit green and magenta light, can be used to generate white light. In all cases these units can be combined multiple times. Further, any combination of colored-light and white-light emitting units that provide improved efficiency of output may be included in the present invention. Applicant has found that a variety of solutions for various applications may be possible that include various color filters combined with OLED materials to provide a good color gamut and efficiency.
- The present invention may also be employed in an RGBW configuration, that is, one that has four light-emitting pixels, one each for red, green, blue, and white. In this arrangement, the white pixel need not have any filter at all, or may only have a filter necessary to achieve the desired white point of the OLED device. It is also possible to provide two layers that emit the same color of light; this technique can be used to optimize the color balance of the white emitter or the relative amount of light emitted by the various colors.
- The order of layer deposition may be controlled to optimize the structure of the present invention to improve performance. Applicant has demonstrated that the organic materials within an OLED are themselves light absorbing. Hence, some of the light emitted from the bottom of a stack (the side farthest from the side from which light is emitted from an OLED) will be absorbed by layers above it. Therefore, it is useful to put the most efficient emitter or the one that emits light that is least absorbed by the other layers at the bottom. In the example cited above, green is the most efficient and thus may be advantageously placed at the bottom of the stack. Likewise, models of the light absorption in the various organic layers indicate that blue light is absorbed most readily, so that the blue light-emitting unit may be located at the top of the stack, as illustrated in
FIG. 1 . - The present invention provides improved manufacturability of a color OLED device by enabling unpatterned deposition of organic materials onto the substrate. No masking is needed because all of the layers are deposited across the entire light emitting area of the substrate. Moreover, improved efficiency over the use of a conventional white-light emitting OLEDs may be obtained by providing an output spectrum for each of the colors that is closely matched to its associated color filter.
- The entire contents of the patents and other publications referred to in this specification are incorporated herein by reference.
- The above examples demonstrate that significant increase in luminance efficiency can be achieved by using a cascaded OLED structure of the present invention comparing the conventional OLED. If operated with the same luminance, significant increase in operational lifetime can also be achieved by using the cascaded OLED structure of the present invention comparing the conventional OLED. Moreover, during operation, the driving voltage can be stabilized due to the insertion of the interfacial layer in the connecting unit. The invention has been described in detail with particular reference to certain preferred embodiments thereof, but it will be understood that variations and modifications can be effected within the spirit and scope of the invention.
PARTS LIST 100 cascaded OLED 105 substrate 110 anode 120 EL stack 121 blue EL unit 122 red EL unit 123 green EL unit 124 blue color filter 125 red color filter 126 green color filter 127 blue light 128 red light 129 green light 130 connecting unit 140 cathode 150 voltage/ current source 160 electrical conductors 170 white EL unit 200 cyan peak 202 yellow peak 204 green peak 206 red peak
Claims (22)
1. An OLED device comprising a substrate having thereon a cascaded organic electroluminescent device comprising:
a) an anode;
b) a cathode;
c) a plurality of cascaded organic electroluminescent units disposed between the anode and the cathode, wherein each organic electroluminescent unit includes at least one light-emitting layer and wherein the plurality of cascaded units includes at least two units that emit light of different colors; and
d) a connecting unit disposed between each adjacent cascaded organic electroluminescent unit; and
e) a colored filter that filters the emitted light.
2. The OLED device of claim 1 , comprising a plurality of anodes defining independently controlled light-emitting areas of the OLED device, wherein the plurality of cascaded organic electroluminescent units are disposed between the plurality of anodes and a common cathode.
3. The OLED device of claim 2 , wherein at least two independently controlled light-emitting areas have differently colored filters that filter the emitted light.
4. The OLED device of claim 3 , wherein the colors of the light transmitted by the differently colored filters are matched to the colors of the light emitted by one of the plurality of organic electroluminescent units.
5. The OLED device of claim 4 wherein the cascaded organic electroluminescent units include units that individually emit red, green, and blue light.
6. The OLED device of claim 3 wherein the cascaded organic electroluminescent units include units that in combination emit white light.
7. The OLED device of claim 6 wherein the color filters transmit red, green, or blue light.
8. The OLED device of claim 3 wherein the efficiency of light emission from or lifetime of one of the cascaded organic electroluminescent units is different from the efficiency of light emission from or lifetime of another of the organic electroluminescent units.
9. The OLED device of claim 8 wherein the relative size of an independently controlled light-emitting area and associated color filter is inversely related to the relative efficiency of light emission from or lifetime of the cascaded organic electroluminescent units.
10. The OLED device of claim 8 wherein the cascaded organic electroluminescent units are ordered in a stack to correspond to the relative efficiency of light emission from the organic electroluminescent units in the stack.
11. The OLED device of claim 8 wherein the cascaded organic electroluminescent units are ordered in a stack to minimize the relative absorption of light emission from the organic electroluminescent units in the stack as the light passes through the stack.
12. The OLED device of claim 3 further comprising an independently controlled light-emitting area and cascaded organic electroluminescent unit without a corresponding color filter.
13. The OLED device of claim 12 wherein the independently controlled light-emitting area without a corresponding color filter emits white light.
14. The OLED device of claim 1 wherein two of the cascaded organic electroluminescent units emit light of the same color.
15. The OLED device of claim 1 wherein the light is emitted through the substrate.
16. The OLED device of claim 1 further comprising a cover formed over the cascaded organic electroluminescent units wherein the light is emitted through the cover.
17. The OLED device of claim 1 comprising two cascaded organic electroluminescent units that emit green and white light respectively.
18. The OLED device of claim 1 comprising two cascaded organic electroluminescent units that emit blue and yellow light respectively.
19. The OLED device of claim 1 comprising two cascaded organic electroluminescent units that emit red and cyan light respectively.
20. The OLED device of claim 1 comprising two cascaded organic electroluminescent units that emit green and magenta light respectively.
21. The OLED device of claim 1 , wherein the connecting unit comprises a doped organic layer.
22. The OLED device of claim 21 , wherein the connecting unit comprises, in sequence, an n-type doped organic layer, and a p-type doped organic layer.
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US10/932,761 US20050029933A1 (en) | 2002-02-15 | 2004-09-02 | Cascaded organic electroluminescent devices with color filters |
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US10/077,270 US6872472B2 (en) | 2002-02-15 | 2002-02-15 | Providing an organic electroluminescent device having stacked electroluminescent units |
US10/932,761 US20050029933A1 (en) | 2002-02-15 | 2004-09-02 | Cascaded organic electroluminescent devices with color filters |
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Cited By (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030127967A1 (en) * | 2001-12-05 | 2003-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Organic semiconductor element |
US20030218166A1 (en) * | 2002-05-21 | 2003-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Organic field effect transistor |
US20040027059A1 (en) * | 2002-08-09 | 2004-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Organic electroluminescent device |
US20050134173A1 (en) * | 2003-08-25 | 2005-06-23 | Tetsuo Tsutsui | Electrode device for organic device and electronic device having the same |
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US20060234416A1 (en) * | 2002-06-28 | 2006-10-19 | Semiconductor Energy Laboratory Co., Ltd. | Light Emitting Device and Manufacturing Method Therefor |
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US20060244371A1 (en) * | 2005-05-02 | 2006-11-02 | Eastman Kodak Company | OLED device having improved lifetime and output |
US20060289882A1 (en) * | 2004-07-30 | 2006-12-28 | Kazuki Nishimura | Organic electroluminescent element and organic electroluminescent display device |
US20070008257A1 (en) * | 2004-12-16 | 2007-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electronic device using the same |
US20070007882A1 (en) * | 2003-07-02 | 2007-01-11 | Idemitsu Kosan Co., Ltd. | Organic electroluminescent device and display using same |
US20070034881A1 (en) * | 2002-04-05 | 2007-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Light Emitting Device |
US20070046189A1 (en) * | 2005-08-31 | 2007-03-01 | Eastman Kodak Company | Intermediate connector for a tandem OLED device |
US20070046183A1 (en) * | 2005-08-29 | 2007-03-01 | Kwok Hoi S | Metallic anode treated by carbon tetrafluoride plasma for organic light emitting device |
US20070063192A1 (en) * | 2005-09-20 | 2007-03-22 | Toppoly Optoelectronics Corp. | Systems for emitting light incorporating pixel structures of organic light-emitting diodes |
US20070085070A1 (en) * | 2005-10-17 | 2007-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Lighting system |
US20070116983A1 (en) * | 2005-11-23 | 2007-05-24 | Hiroshi Kanno | Phosphorescent OLED with interlayer |
US20070114544A1 (en) * | 2004-09-24 | 2007-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20070126348A1 (en) * | 2005-12-01 | 2007-06-07 | Au Optronics Corp. | Organic electroluminescent device |
US20070159073A1 (en) * | 2005-12-22 | 2007-07-12 | Matsushita Electric Industrial Co., Ltd. | Electroluminescent device, display apparatus, exposure apparatus, and lighting apparatus using the same |
US20070166567A1 (en) * | 2006-01-13 | 2007-07-19 | Au Optronics Corp. | Organic electro-luminescence device |
US20070182318A1 (en) * | 2004-05-21 | 2007-08-09 | Daisuke Kumaki | Light emitting element and light emitting device |
US20070205411A1 (en) * | 2006-03-06 | 2007-09-06 | Fujifilm Corporation | Organic electroluminescence device |
US20070222379A1 (en) * | 2004-05-20 | 2007-09-27 | Shunpei Yamazaki | Light-Emitting Element and Display Device |
US20080135858A1 (en) * | 2004-05-21 | 2008-06-12 | Smiconductor Energy Laboratory Co., Ltd. | Light Emitting Element and Light Emitting Device Using the Element |
US20080191611A1 (en) * | 2005-03-23 | 2008-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Composite Material, Light Emitting Element and Light Emitting Device |
US20080261075A1 (en) * | 2006-12-04 | 2008-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Light Emitting Element, Light Emitting Device, and Electronic Device |
US20080278067A1 (en) * | 2007-05-10 | 2008-11-13 | Yuan-Sheng Tyan | Electroluminescent device having improved light output |
US20090009071A1 (en) * | 2005-12-21 | 2009-01-08 | Sven Murano | Organic Component |
US20090009101A1 (en) * | 2006-01-18 | 2009-01-08 | Kang Min-Soo | Oled Having Stacked Organic Light-Emitting Units |
US20090009072A1 (en) * | 2005-12-23 | 2009-01-08 | Philipp Wellmann | Organic Light Emitting Device With a Plurality of Organic Electroluminescent Units Stacked Upon Each Other |
US20090045728A1 (en) * | 2005-12-23 | 2009-02-19 | Sven Murano | Electronic device with a layer structure of organic layers |
US20090079342A1 (en) * | 2004-08-04 | 2009-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, display device, and electronic appliance |
US20090230844A1 (en) * | 2005-03-15 | 2009-09-17 | Novaled Ag | Light-emitting component |
US20090315455A1 (en) * | 2008-06-20 | 2009-12-24 | Innolux Display Corp. | Oled Display Device and Method for Fabricating Same |
US20100013378A1 (en) * | 2008-07-16 | 2010-01-21 | Universal Display Corporation | Intermediate connector for stacked organic light emitting devices |
US20100051923A1 (en) * | 2008-08-04 | 2010-03-04 | Novaled Ag | Organischer Feldeffekt Transistor |
US20100065825A1 (en) * | 2006-04-19 | 2010-03-18 | Novaled Ag | Light-Emitting Component |
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US20110031476A1 (en) * | 2009-08-05 | 2011-02-10 | Yamagata Promotional Organization For Industrial Technology | Organic electroluminescence element |
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US20110068329A1 (en) * | 2007-10-24 | 2011-03-24 | Merck Patent Gmbh | Optoelectronic device |
US8071976B2 (en) | 2008-08-04 | 2011-12-06 | Novaled Ag | Organic field-effect transistor and circuit |
US20120193619A1 (en) * | 2009-10-14 | 2012-08-02 | Konica Minolta Holdings, Inc. | Organic electroluminescent element and lighting device using same |
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US8502200B2 (en) | 2006-01-11 | 2013-08-06 | Novaled Ag | Electroluminescent light-emitting device comprising an arrangement of organic layers, and method for its production |
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Families Citing this family (280)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3875401B2 (en) * | 1998-05-12 | 2007-01-31 | Tdk株式会社 | Organic EL display device and organic EL element |
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GB2410600A (en) * | 2004-01-30 | 2005-08-03 | Cambridge Display Tech Ltd | Organic light emitting diode display device |
US7030554B2 (en) * | 2004-02-06 | 2006-04-18 | Eastman Kodak Company | Full-color organic display having improved blue emission |
JP2005243549A (en) * | 2004-02-27 | 2005-09-08 | Sony Corp | Display element, display device and image pickup device |
JP4175273B2 (en) * | 2004-03-03 | 2008-11-05 | セイコーエプソン株式会社 | Method for manufacturing stacked organic electroluminescence element and display device |
JP4408382B2 (en) * | 2004-03-18 | 2010-02-03 | 株式会社 日立ディスプレイズ | Organic light emitting display |
EP2254390B1 (en) * | 2004-03-26 | 2012-07-04 | Panasonic Corporation | Organic light emitting element |
CN100493289C (en) * | 2004-04-09 | 2009-05-27 | Lg化学株式会社 | Stacked organic light emitting device having high efficiency and high brightness |
JP2005310441A (en) * | 2004-04-19 | 2005-11-04 | Idemitsu Kosan Co Ltd | Organic electroluminescent element |
CN100508238C (en) * | 2004-05-11 | 2009-07-01 | Lg化学株式会社 | Organic electronic device |
EP1749424B1 (en) * | 2004-05-20 | 2011-10-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element and light emitting device |
JP4731996B2 (en) * | 2004-05-20 | 2011-07-27 | 株式会社半導体エネルギー研究所 | Light emitting element and display device |
JP4461367B2 (en) * | 2004-05-24 | 2010-05-12 | ソニー株式会社 | Display element |
US7126267B2 (en) | 2004-05-28 | 2006-10-24 | Eastman Kodak Company | Tandem OLED having stable intermediate connectors |
US20060006792A1 (en) * | 2004-07-09 | 2006-01-12 | Eastman Kodak Company | Flat panel light emitting devices with two sided |
JP2006295104A (en) | 2004-07-23 | 2006-10-26 | Semiconductor Energy Lab Co Ltd | Light emitting element and light emitting device using the same |
JP4785386B2 (en) * | 2005-01-31 | 2011-10-05 | 三洋電機株式会社 | Organic electroluminescent device and organic electroluminescent display device |
JP4578215B2 (en) * | 2004-11-30 | 2010-11-10 | 三洋電機株式会社 | Organic electroluminescent device and organic electroluminescent display device |
US7449830B2 (en) | 2004-08-02 | 2008-11-11 | Lg Display Co., Ltd. | OLEDs having improved luminance stability |
US7449831B2 (en) | 2004-08-02 | 2008-11-11 | Lg Display Co., Ltd. | OLEDs having inorganic material containing anode capping layer |
JP4697142B2 (en) * | 2004-08-05 | 2011-06-08 | コニカミノルタホールディングス株式会社 | Organic electroluminescence element, display device and lighting device |
US7273663B2 (en) * | 2004-08-20 | 2007-09-25 | Eastman Kodak Company | White OLED having multiple white electroluminescence units |
JP5409854B2 (en) * | 2004-09-24 | 2014-02-05 | 株式会社半導体エネルギー研究所 | Light emitting device |
JP5084123B2 (en) * | 2004-09-24 | 2012-11-28 | 株式会社半導体エネルギー研究所 | Light emitting device |
KR101239161B1 (en) * | 2004-09-30 | 2013-03-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Light emitting element |
KR20140015128A (en) * | 2004-10-18 | 2014-02-06 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device |
KR100685407B1 (en) * | 2004-10-18 | 2007-02-22 | 삼성에스디아이 주식회사 | Full color OLED having red, green, blue, cyan, magenta and yellow color modulation layers |
US7560862B2 (en) * | 2004-10-22 | 2009-07-14 | Eastman Kodak Company | White OLEDs with a color-compensated electroluminescent unit |
US20060087231A1 (en) * | 2004-10-27 | 2006-04-27 | Eastman Kodak Company | Self-cleaning area illumination system |
US20060091794A1 (en) * | 2004-11-04 | 2006-05-04 | Eastman Kodak Company | Passive matrix OLED display having increased size |
US20060093795A1 (en) * | 2004-11-04 | 2006-05-04 | Eastman Kodak Company | Polymeric substrate having a desiccant layer |
JP2006135145A (en) * | 2004-11-08 | 2006-05-25 | Sony Corp | Organic material for display element and display element |
US7351999B2 (en) * | 2004-12-16 | 2008-04-01 | Au Optronics Corporation | Organic light-emitting device with improved layer structure |
US7259391B2 (en) * | 2004-12-22 | 2007-08-21 | General Electric Company | Vertical interconnect for organic electronic devices |
US7075231B1 (en) | 2005-01-03 | 2006-07-11 | Eastman Kodak Company | Tandem OLEDs having low drive voltage |
TWI246353B (en) * | 2005-02-18 | 2005-12-21 | Au Optronics Corp | Organic light-emitting diode |
US7679282B2 (en) * | 2005-03-02 | 2010-03-16 | Osram Opto Semiconductors Gmbh | Polymer and small molecule based hybrid light source |
US8026531B2 (en) | 2005-03-22 | 2011-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP2006302864A (en) * | 2005-03-23 | 2006-11-02 | Fuji Photo Film Co Ltd | Organic electroluminescent element |
US7088051B1 (en) | 2005-04-08 | 2006-08-08 | Eastman Kodak Company | OLED display with control |
US9070884B2 (en) | 2005-04-13 | 2015-06-30 | Universal Display Corporation | Hybrid OLED having phosphorescent and fluorescent emitters |
US7271537B2 (en) * | 2005-04-15 | 2007-09-18 | Sony Corporation | Display device and a method of manufacturing the display device |
US8057916B2 (en) * | 2005-04-20 | 2011-11-15 | Global Oled Technology, Llc. | OLED device with improved performance |
US7602119B2 (en) * | 2005-04-25 | 2009-10-13 | Eastman Kodak Company | OLED with magenta and green emissive layers |
US7471041B2 (en) * | 2005-04-25 | 2008-12-30 | Eastman Kodak Company | OLED multicolor displays |
US20060244373A1 (en) * | 2005-04-28 | 2006-11-02 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method for manufacturing thereof |
US20060244370A1 (en) * | 2005-05-02 | 2006-11-02 | Eastman Kodak Company | Light-emitting layer spacing in tandem OLED devices |
US7777407B2 (en) | 2005-05-04 | 2010-08-17 | Lg Display Co., Ltd. | Organic light emitting devices comprising a doped triazine electron transport layer |
US8487527B2 (en) * | 2005-05-04 | 2013-07-16 | Lg Display Co., Ltd. | Organic light emitting devices |
US7728517B2 (en) * | 2005-05-20 | 2010-06-01 | Lg Display Co., Ltd. | Intermediate electrodes for stacked OLEDs |
US7795806B2 (en) | 2005-05-20 | 2010-09-14 | Lg Display Co., Ltd. | Reduced reflectance display devices containing a thin-layer metal-organic mixed layer (MOML) |
US7750561B2 (en) | 2005-05-20 | 2010-07-06 | Lg Display Co., Ltd. | Stacked OLED structure |
US7811679B2 (en) | 2005-05-20 | 2010-10-12 | Lg Display Co., Ltd. | Display devices with light absorbing metal nanoparticle layers |
US7943244B2 (en) * | 2005-05-20 | 2011-05-17 | Lg Display Co., Ltd. | Display device with metal-organic mixed layer anodes |
TWI471058B (en) * | 2005-06-01 | 2015-01-21 | Univ Princeton | Fluorescent filtered electrophosphorescence |
US7474048B2 (en) * | 2005-06-01 | 2009-01-06 | The Trustees Of Princeton University | Fluorescent filtered electrophosphorescence |
TWI295900B (en) * | 2005-06-16 | 2008-04-11 | Au Optronics Corp | Method for improving color-shift of serially connected organic electroluminescence device |
FR2887684A1 (en) * | 2005-06-28 | 2006-12-29 | Thomson Licensing Sa | ELECTROLUMINESCENT DIODE OF WHICH ONE OF THE ELECTRODES IS MULTILAYER IN AMORPHOUS CARBON |
US7531959B2 (en) | 2005-06-29 | 2009-05-12 | Eastman Kodak Company | White light tandem OLED display with filters |
US7564182B2 (en) | 2005-06-29 | 2009-07-21 | Eastman Kodak Company | Broadband light tandem OLED display |
KR100712296B1 (en) * | 2005-06-29 | 2007-04-27 | 삼성에스디아이 주식회사 | organic eletro luminescence device having multi-emitting unit |
KR101351816B1 (en) * | 2005-07-06 | 2014-01-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Light-emitting element, light-emitting device, and electronic device |
US20090015150A1 (en) * | 2005-07-15 | 2009-01-15 | Lg Chem, Ltd. | Organic light emitting device and method for manufacturing the same |
TWI321968B (en) * | 2005-07-15 | 2010-03-11 | Lg Chemical Ltd | Organic light meitting device and method for manufacturing the same |
KR100806812B1 (en) | 2005-07-25 | 2008-02-25 | 엘지.필립스 엘시디 주식회사 | Organic Electroluminescence Device and method for fabricating the same |
KR100672535B1 (en) * | 2005-07-25 | 2007-01-24 | 엘지전자 주식회사 | Organic electroluminescence device and method for fabricating the same |
JP4785509B2 (en) * | 2005-11-30 | 2011-10-05 | 三洋電機株式会社 | Organic electroluminescent device and organic electroluminescent display device |
KR101446340B1 (en) * | 2005-08-11 | 2014-10-01 | 엘지디스플레이 주식회사 | Electro-Luminescence Display Apparatus |
KR20070019496A (en) * | 2005-08-12 | 2007-02-15 | 삼성에스디아이 주식회사 | White organic light-emitting devices and methdo for preparing the same |
CN100444425C (en) * | 2005-08-26 | 2008-12-17 | 中华映管股份有限公司 | Stack organic electroluminescent cell and its manufacturing method |
JP4837958B2 (en) * | 2005-08-26 | 2011-12-14 | 大日本印刷株式会社 | Organic electroluminescence device |
GB0518512D0 (en) * | 2005-09-10 | 2005-10-19 | Eastman Kodak Co | A display element |
US20070098891A1 (en) * | 2005-10-31 | 2007-05-03 | Eastman Kodak Company | Vapor deposition apparatus and method |
US9666826B2 (en) * | 2005-11-30 | 2017-05-30 | Global Oled Technology Llc | Electroluminescent device including an anthracene derivative |
US7638941B2 (en) * | 2005-12-02 | 2009-12-29 | Eastman Kodak Company | Lamp with multi-colored OLED elements |
EP1793264A1 (en) * | 2005-12-05 | 2007-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device |
WO2007072766A1 (en) | 2005-12-22 | 2007-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
WO2007071450A1 (en) * | 2005-12-23 | 2007-06-28 | Novaled Ag | Electronic device with a layer structure of organic layers |
WO2007071451A1 (en) * | 2005-12-23 | 2007-06-28 | Novaled Ag | An organic light emitting device with a plurality of organic electroluminescent units stacked upon each other |
EP1804114B1 (en) | 2005-12-28 | 2014-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
JP2007188677A (en) * | 2006-01-11 | 2007-07-26 | Rohm Co Ltd | Organic el element |
US8008851B2 (en) * | 2006-01-19 | 2011-08-30 | Lg Display Co., Ltd. | Organic light emitting display |
EP1832915B1 (en) * | 2006-01-31 | 2012-04-18 | Semiconductor Energy Laboratory Co., Ltd. | Display device with improved contrast |
US20070176539A1 (en) * | 2006-02-01 | 2007-08-02 | Osram Opto Semiconductors Gmbh | OLED with area defined multicolor emission within a single lighting element |
EP1816508A1 (en) | 2006-02-02 | 2007-08-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
US8698392B2 (en) | 2006-02-07 | 2014-04-15 | Sumitomo Chemical Company, Limited | Organic electroluminescent element |
US7528418B2 (en) * | 2006-02-24 | 2009-05-05 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
EP1826606B1 (en) * | 2006-02-24 | 2012-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
EP1826605A1 (en) * | 2006-02-24 | 2007-08-29 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
WO2007102704A1 (en) * | 2006-03-07 | 2007-09-13 | Lg Chem, Ltd. | Oled and fabricating method of the same |
JP2007265696A (en) * | 2006-03-27 | 2007-10-11 | Seiko Epson Corp | Manufacturing method of light emitting device, light emitting device, and electronic apparatus |
US7332860B2 (en) | 2006-03-30 | 2008-02-19 | Eastman Kodak Company | Efficient white-light OLED display with filters |
KR100774200B1 (en) * | 2006-04-13 | 2007-11-08 | 엘지전자 주식회사 | Organic Electroluminescence Device and method for fabricating the same |
US7951421B2 (en) * | 2006-04-20 | 2011-05-31 | Global Oled Technology Llc | Vapor deposition of a layer |
TWI307978B (en) * | 2006-04-28 | 2009-03-21 | Au Optronics Corp | Cascade organic electroluminescent device |
EP2016633A1 (en) | 2006-05-08 | 2009-01-21 | Eastman Kodak Company | Oled electron-injecting layer |
WO2007132965A1 (en) * | 2006-05-12 | 2007-11-22 | Cheong-A Baek | High brightness electro luminescence device and method for manufacturing thereof |
TWI285856B (en) * | 2006-05-25 | 2007-08-21 | Au Optronics Corp | Reflective organic electroluminescence panel and display |
CN100456450C (en) * | 2006-06-27 | 2009-01-28 | 友达光电股份有限公司 | Tandem type organic light emitting component, and forming method, and method for forming faceplate |
TWI317182B (en) * | 2006-07-07 | 2009-11-11 | Au Optronics Corp | Tandem organic electroluminescent elements and uses of the same |
CN101490867B (en) * | 2006-07-19 | 2012-01-25 | 皇家飞利浦电子股份有限公司 | Stacked electro-optically active organic diode with inorganic semiconductor connection layer |
JP2006344606A (en) * | 2006-07-31 | 2006-12-21 | Idemitsu Kosan Co Ltd | Organic el element and light emitting device using it |
CN100456489C (en) * | 2006-08-01 | 2009-01-28 | 友达光电股份有限公司 | Tandem type organic electroluminescent component, and application |
US8049685B2 (en) * | 2006-11-09 | 2011-11-01 | Global Oled Technology Llc | Passive matrix thin-film electro-luminescent display |
KR100796603B1 (en) * | 2006-11-28 | 2008-01-21 | 삼성에스디아이 주식회사 | Organic light emitting display device and method of fabricating the same |
US20080176099A1 (en) * | 2007-01-18 | 2008-07-24 | Hatwar Tukaram K | White oled device with improved functions |
KR100825176B1 (en) * | 2007-01-26 | 2008-04-24 | 삼성전자주식회사 | Substrate for patterning and method for forming a pattern of nanocrystals using the same |
KR101374891B1 (en) * | 2007-02-09 | 2014-03-25 | 삼성디스플레이 주식회사 | Display device |
KR20080083449A (en) * | 2007-03-12 | 2008-09-18 | 삼성전자주식회사 | White organic light emitting device |
JP2008234885A (en) * | 2007-03-19 | 2008-10-02 | Semiconductor Energy Lab Co Ltd | Light emitting element |
US7948165B2 (en) * | 2007-05-09 | 2011-05-24 | Global Oled Technology Llc | High-performance tandem white OLED |
US7759854B2 (en) * | 2007-05-30 | 2010-07-20 | Global Oled Technology Llc | Lamp with adjustable color |
US20090001885A1 (en) * | 2007-06-27 | 2009-01-01 | Spindler Jeffrey P | Tandem oled device |
KR100899423B1 (en) * | 2007-08-16 | 2009-05-27 | 삼성모바일디스플레이주식회사 | Organic light emitting display device and method of fabricating the same |
JP2009076865A (en) | 2007-08-29 | 2009-04-09 | Fujifilm Corp | Organic electroluminescence device |
KR101378852B1 (en) * | 2007-09-12 | 2014-03-27 | 엘지디스플레이 주식회사 | Display Device |
KR101548382B1 (en) | 2007-09-14 | 2015-08-28 | 유디씨 아일랜드 리미티드 | Organic electroluminescence device |
US7982216B2 (en) | 2007-11-15 | 2011-07-19 | Fujifilm Corporation | Thin film field effect transistor with amorphous oxide active layer and display using the same |
JP5489446B2 (en) | 2007-11-15 | 2014-05-14 | 富士フイルム株式会社 | Thin film field effect transistor and display device using the same |
JP2009129711A (en) * | 2007-11-22 | 2009-06-11 | Seiko Epson Corp | Light-emitting element, display, and electronic equipment |
TWI364840B (en) * | 2007-12-03 | 2012-05-21 | Chimei Innolux Corp | Tandem organic light emitting device and method for assembling the same |
US8877350B2 (en) | 2007-12-11 | 2014-11-04 | Global Oled Technology Llc | White OLED with two blue light-emitting layers |
KR100982411B1 (en) * | 2007-12-27 | 2010-09-15 | (주)에이디에스 | Organic light emitting diode and method for manufacturing the same |
US7804245B2 (en) * | 2008-01-24 | 2010-09-28 | Global Oled Technology Llc | Electroluminescent device having improved brightness uniformity |
JP4915356B2 (en) * | 2008-01-29 | 2012-04-11 | セイコーエプソン株式会社 | LIGHT EMITTING ELEMENT, DISPLAY DEVICE, AND ELECTRONIC DEVICE |
US7955719B2 (en) * | 2008-01-30 | 2011-06-07 | Global Oled Technology Llc | Tandem OLED device with intermediate connector |
US7821201B2 (en) * | 2008-01-31 | 2010-10-26 | Global Oled Technology Llc | Tandem OLED device with intermediate connector |
US8115399B2 (en) * | 2008-02-19 | 2012-02-14 | General Electric Company | OLED light source |
JP5243972B2 (en) | 2008-02-28 | 2013-07-24 | ユー・ディー・シー アイルランド リミテッド | Organic electroluminescence device |
JP4555358B2 (en) | 2008-03-24 | 2010-09-29 | 富士フイルム株式会社 | Thin film field effect transistor and display device |
JP4734368B2 (en) * | 2008-03-31 | 2011-07-27 | 株式会社 日立ディスプレイズ | Organic light emitting display |
JP4531836B2 (en) | 2008-04-22 | 2010-08-25 | 富士フイルム株式会社 | Organic electroluminescent device, novel platinum complex compound and novel compound that can be a ligand |
CN104882555B (en) * | 2008-05-16 | 2018-11-30 | 乐金显示有限公司 | Stacked organic light-emitting diode |
JP5476061B2 (en) * | 2008-07-30 | 2014-04-23 | パナソニック株式会社 | Organic electroluminescence device and method for manufacturing the same |
KR101574130B1 (en) * | 2008-09-01 | 2015-12-04 | 삼성디스플레이 주식회사 | Organic light emitting diode display and method for manufacturing the same |
KR101045264B1 (en) * | 2008-09-09 | 2011-06-29 | 네오뷰코오롱 주식회사 | Display apparatus, mobile device having the same and display control method |
KR101097453B1 (en) * | 2008-09-09 | 2011-12-23 | 네오뷰코오롱 주식회사 | Keypad apparatus, mobile device having the same and keypad control method |
US7977872B2 (en) * | 2008-09-16 | 2011-07-12 | Global Oled Technology Llc | High-color-temperature tandem white OLED |
JP2012504847A (en) * | 2008-10-01 | 2012-02-23 | エルジー・ケム・リミテッド | ORGANIC LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF |
KR101582938B1 (en) * | 2008-11-20 | 2016-01-08 | 삼성디스플레이 주식회사 | Organic light emitting device |
KR101659935B1 (en) * | 2008-12-01 | 2016-09-27 | 삼성디스플레이 주식회사 | Organic light emitting element and organic light emitting device |
CN101447555B (en) * | 2008-12-29 | 2012-01-25 | 中国科学院长春应用化学研究所 | Laminated organic electro-luminescent device of an organic semiconductor-based hetero-junction electric-charge generating layer taken as a connecting layer and preparation method thereof |
JP2010182449A (en) | 2009-02-03 | 2010-08-19 | Fujifilm Corp | Organic electroluminescent display device |
JP2010186723A (en) | 2009-02-13 | 2010-08-26 | Fujifilm Corp | Organic el device and method of manufacturing the same |
JP5606458B2 (en) * | 2009-02-19 | 2014-10-15 | エージーシー グラス ユーロップ | Transparent substrate for photonic devices |
JP2010205650A (en) | 2009-03-05 | 2010-09-16 | Fujifilm Corp | Organic el display device |
DE102009012346B4 (en) * | 2009-03-09 | 2024-02-15 | Merck Patent Gmbh | Organic electroluminescent device and method for producing the same |
JP5229022B2 (en) * | 2009-03-12 | 2013-07-03 | セイコーエプソン株式会社 | LIGHT EMITTING ELEMENT, DISPLAY DEVICE, AND ELECTRONIC DEVICE |
US8283054B2 (en) | 2009-04-03 | 2012-10-09 | Global Oled Technology Llc | Tandem white OLED with efficient electron transfer |
TWI407831B (en) * | 2009-04-17 | 2013-09-01 | Innolux Corp | System for displaying images |
EP2427925B1 (en) | 2009-05-05 | 2017-12-20 | Koninklijke Philips N.V. | Electroluminescent device |
KR101045265B1 (en) * | 2009-05-29 | 2011-06-29 | 네오뷰코오롱 주식회사 | Display apparatus |
US20110037054A1 (en) * | 2009-08-17 | 2011-02-17 | Chan-Long Shieh | Amoled with cascaded oled structures |
JP2011060549A (en) | 2009-09-09 | 2011-03-24 | Fujifilm Corp | Optical member for organic el device, and organic el device |
JP5473506B2 (en) | 2009-09-14 | 2014-04-16 | ユー・ディー・シー アイルランド リミテッド | Color filter and light emitting display element |
JP5657243B2 (en) | 2009-09-14 | 2015-01-21 | ユー・ディー・シー アイルランド リミテッド | Color filter and light emitting display element |
JP5573127B2 (en) * | 2009-11-27 | 2014-08-20 | セイコーエプソン株式会社 | LIGHT EMITTING ELEMENT, DISPLAY DEVICE, AND ELECTRONIC DEVICE |
KR101073540B1 (en) * | 2009-12-04 | 2011-10-14 | 삼성모바일디스플레이주식회사 | Organic light emitting diode device |
KR101094282B1 (en) * | 2009-12-04 | 2011-12-19 | 삼성모바일디스플레이주식회사 | Organic light emitting diode device |
US8633475B2 (en) * | 2010-07-16 | 2014-01-21 | Idemitsu Kosan Co., Ltd. | Organic electroluminescence device and a method for producing the device |
JP2012038523A (en) * | 2010-08-05 | 2012-02-23 | Seiko Epson Corp | Light-emitting element, light-emitting device, display device and electronic device |
KR101365824B1 (en) | 2010-10-22 | 2014-02-20 | 엘지디스플레이 주식회사 | Organic Light Emitting Diode Device |
DE102010061013B4 (en) | 2010-12-03 | 2019-03-21 | Novaled Gmbh | Organic electro-optical device |
US8692457B2 (en) | 2010-12-20 | 2014-04-08 | General Electric Company | Large area light emitting electrical package with current spreading bus |
KR101872925B1 (en) | 2010-12-24 | 2018-06-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Lighting device |
US8552440B2 (en) | 2010-12-24 | 2013-10-08 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device |
CN103262656B (en) | 2010-12-28 | 2016-08-24 | 株式会社半导体能源研究所 | Luminescence unit, light-emitting device and illuminator |
JP2012155953A (en) | 2011-01-25 | 2012-08-16 | Sony Corp | Organic el display device and electronic apparatus |
JP5925511B2 (en) | 2011-02-11 | 2016-05-25 | 株式会社半導体エネルギー研究所 | Light emitting unit, light emitting device, lighting device |
US8735874B2 (en) | 2011-02-14 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, display device, and method for manufacturing the same |
US8772795B2 (en) | 2011-02-14 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and lighting device |
JP2012199231A (en) * | 2011-03-04 | 2012-10-18 | Semiconductor Energy Lab Co Ltd | Display device |
JP2012204110A (en) * | 2011-03-24 | 2012-10-22 | Sony Corp | Display element, display device, and electronic apparatus |
JP5685733B2 (en) * | 2011-03-24 | 2015-03-18 | パナソニックIpマネジメント株式会社 | Organic electroluminescence element, lighting apparatus, and food storage |
US9105857B2 (en) * | 2011-03-24 | 2015-08-11 | Panasonic Intellectual Property Management Co., Ltd. | Organic electroluminescent element, lighting fixture, and food storage device |
JP6108664B2 (en) * | 2011-04-04 | 2017-04-05 | ローム株式会社 | Organic EL device |
KR20120119449A (en) * | 2011-04-21 | 2012-10-31 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
US10079349B2 (en) | 2011-05-27 | 2018-09-18 | Universal Display Corporation | Organic electroluminescent materials and devices |
US10158089B2 (en) * | 2011-05-27 | 2018-12-18 | Universal Display Corporation | Organic electroluminescent materials and devices |
EP3667752A1 (en) | 2011-06-22 | 2020-06-17 | Novaled GmbH | Electronic device and compound |
JP2014532983A (en) * | 2011-10-19 | 2014-12-08 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーE.I.Du Pont De Nemours And Company | Organic electronic devices for lighting |
CN102437170B (en) * | 2011-11-18 | 2014-03-26 | 贵州大学 | Blue-light-excited TFT (thin film transistor)-LED (light emitting diode) array display substrate and manufacturing method thereof |
CN103311451A (en) * | 2012-03-13 | 2013-09-18 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
KR101950836B1 (en) * | 2012-05-22 | 2019-02-22 | 엘지디스플레이 주식회사 | Organic light emitting device and method of fabricating the same |
JP2013253023A (en) * | 2012-06-05 | 2013-12-19 | Canon Inc | New benzopyrene compound and organic light-emitting element having the same |
KR101952706B1 (en) * | 2012-07-24 | 2019-02-28 | 삼성디스플레이 주식회사 | Organic light-emitting device and organic light-emitting display apparatus including the same |
JP6214077B2 (en) * | 2012-07-31 | 2017-10-18 | 株式会社Joled | DISPLAY DEVICE, DISPLAY DEVICE MANUFACTURING METHOD, ELECTRONIC DEVICE, AND DISPLAY DEVICE DRIVE METHOD |
WO2014030666A1 (en) | 2012-08-24 | 2014-02-27 | コニカミノルタ株式会社 | Transparent electrode, electronic device, and method for manufacturing transparent electrode |
JPWO2014034341A1 (en) | 2012-08-27 | 2016-08-08 | コニカミノルタ株式会社 | Organic electroluminescence device |
US10957870B2 (en) * | 2012-09-07 | 2021-03-23 | Universal Display Corporation | Organic light emitting device |
US9853053B2 (en) | 2012-09-10 | 2017-12-26 | 3B Technologies, Inc. | Three dimension integrated circuits employing thin film transistors |
US9257665B2 (en) * | 2012-09-14 | 2016-02-09 | Universal Display Corporation | Lifetime OLED display |
JP6449162B2 (en) * | 2012-10-09 | 2019-01-09 | メルク パテント ゲーエムベーハー | Electronic element |
US9209411B2 (en) * | 2012-12-07 | 2015-12-08 | Universal Display Corporation | Organic electroluminescent materials and devices |
US8766531B1 (en) * | 2012-12-14 | 2014-07-01 | Universal Display Corporation | Wearable display |
KR102148870B1 (en) * | 2012-12-18 | 2020-08-27 | 에스에프씨 주식회사 | An electroluminescent compound and an electroluminescent device comprising the same |
KR102113149B1 (en) * | 2012-12-28 | 2020-05-20 | 엘지디스플레이 주식회사 | Organic light emitting element, organic light emitting display device and method for manufacturing the same |
CN104051633A (en) * | 2013-03-11 | 2014-09-17 | 海洋王照明科技股份有限公司 | Organic light-emitting device and manufacturing method thereof |
CN104078603A (en) * | 2013-03-29 | 2014-10-01 | 海洋王照明科技股份有限公司 | Organic light-emitting diode and preparation method thereof |
JP6314974B2 (en) | 2013-03-29 | 2018-04-25 | コニカミノルタ株式会社 | ORGANIC ELECTROLUMINESCENT ELEMENT, LIGHTING DEVICE, DISPLAY DEVICE, LIGHT EMITTING THIN FILM AND COMPOSITION AND LIGHT EMITTING METHOD |
JP6350518B2 (en) | 2013-03-29 | 2018-07-04 | コニカミノルタ株式会社 | ORGANIC ELECTROLUMINESCENCE ELEMENT, LIGHTING DEVICE AND DISPLAY DEVICE HAVING THE SAME |
KR101798307B1 (en) | 2013-03-29 | 2017-11-15 | 코니카 미놀타 가부시키가이샤 | Material for organic electroluminescent elements, organic electroluminescent element, display device and lighting device |
EP2801523B1 (en) | 2013-05-06 | 2017-10-25 | Airbus Operations GmbH | Passenger supply system for installation in a passenger supply channel |
US9537106B2 (en) * | 2013-05-09 | 2017-01-03 | Universal Display Corporation | Organic electroluminescent materials and devices |
US10141378B2 (en) | 2013-10-30 | 2018-11-27 | Industrial Technology Research Institute | Light emitting device free of TFT and chiplet |
US9390649B2 (en) | 2013-11-27 | 2016-07-12 | Universal Display Corporation | Ruggedized wearable display |
CN103715368A (en) * | 2013-12-27 | 2014-04-09 | 京东方科技集团股份有限公司 | Light emitting device, manufacturing method thereof and display device |
KR102135929B1 (en) * | 2013-12-31 | 2020-07-20 | 엘지디스플레이 주식회사 | White Organic Emitting Device |
TWI586012B (en) * | 2014-01-02 | 2017-06-01 | 財團法人工業技術研究院 | Light emitting element |
KR102146367B1 (en) * | 2014-03-06 | 2020-08-21 | 삼성디스플레이 주식회사 | Organic light emitting diode device |
DE102014112130B4 (en) * | 2014-08-25 | 2021-05-12 | Pictiva Displays International Limited | Organic light-emitting component and method for producing an organic light-emitting component |
JP2016056169A (en) * | 2014-09-05 | 2016-04-21 | 株式会社半導体エネルギー研究所 | Organic compound, light-emitting element, light-emitting device, electronic device, and luminaire |
CN104319355B (en) * | 2014-11-20 | 2016-10-05 | 京东方科技集团股份有限公司 | A kind of luminescent device and drive control method, light fixture |
KR102317991B1 (en) * | 2014-11-28 | 2021-10-27 | 엘지디스플레이 주식회사 | Organic light emitting display device |
CN107112049A (en) | 2014-12-23 | 2017-08-29 | 3B技术公司 | Using the three dimensional integrated circuits of thin film transistor (TFT) |
JP6090343B2 (en) * | 2015-01-21 | 2017-03-08 | コニカミノルタ株式会社 | Method for manufacturing organic electroluminescence element |
JP5831654B1 (en) | 2015-02-13 | 2015-12-09 | コニカミノルタ株式会社 | Aromatic heterocycle derivative, organic electroluminescence device using the same, illumination device and display device |
KR102323243B1 (en) * | 2015-07-22 | 2021-11-08 | 삼성디스플레이 주식회사 | Organic light emitting diode and organic light emitting diode display including the same |
WO2017073934A1 (en) * | 2015-10-26 | 2017-05-04 | 주식회사 엘지화학 | Polycyclic compound and organic light emitting device comprising same |
KR102574052B1 (en) * | 2015-11-19 | 2023-09-04 | 엘지디스플레이 주식회사 | Organic light emitting display device |
US10524319B2 (en) | 2016-02-10 | 2019-12-31 | Konica Minolta, Inc. | Organic electroluminescent light emitting device |
KR20170128664A (en) * | 2016-05-12 | 2017-11-23 | 삼성디스플레이 주식회사 | Organic light emitting device |
TWI619703B (en) * | 2016-05-18 | 2018-04-01 | 昱鐳光電科技股份有限公司 | Compound for organic electroluminescent device and organic electroluminescent devices using the same |
CN105977392A (en) * | 2016-05-24 | 2016-09-28 | 深圳市华星光电技术有限公司 | Three-primary-color white-light OLED device structure, electroluminescent device, and display device |
KR20170133564A (en) * | 2016-05-25 | 2017-12-06 | 삼성디스플레이 주식회사 | Organic light emitting display |
KR102616023B1 (en) * | 2016-06-30 | 2023-12-22 | 삼성디스플레이 주식회사 | Organic light emitting diode and display device having the same |
KR102611206B1 (en) * | 2016-07-13 | 2023-12-08 | 삼성디스플레이 주식회사 | Organic light emitting device |
KR102620085B1 (en) * | 2016-07-29 | 2024-01-02 | 엘지디스플레이 주식회사 | Organic Light Emitting Device and Organic Light Emitting Display Device |
WO2018037791A1 (en) | 2016-08-24 | 2018-03-01 | コニカミノルタ株式会社 | Organic electro-luminescence emission device |
KR102639784B1 (en) * | 2016-10-25 | 2024-02-26 | 삼성디스플레이 주식회사 | Monoamine compound and organic electroluminescence device including the same |
KR102157756B1 (en) * | 2016-12-12 | 2020-09-18 | 엘지디스플레이 주식회사 | Organic compounds and organic light emitting diode and organic light emittind display device having the same |
US10276801B2 (en) * | 2017-01-25 | 2019-04-30 | Industrial Technology Research Institute | Triazine-based compound and light emitting device |
CN106816552B (en) * | 2017-03-03 | 2019-07-12 | 上海天马有机发光显示技术有限公司 | A kind of OLED display panel and the electronic equipment containing it |
DE102017111425A1 (en) * | 2017-05-24 | 2018-11-29 | Osram Oled Gmbh | Organic electronic component and method for producing an organic electronic component |
JP7144422B2 (en) * | 2017-08-10 | 2022-09-29 | 株式会社半導体エネルギー研究所 | Organic compounds, light-emitting devices, display devices, electronic devices and lighting devices |
US11897896B2 (en) | 2017-12-13 | 2024-02-13 | Beijing Summer Sprout Technology Co., Ltd. | Organic electroluminescent materials and devices |
US11466009B2 (en) | 2017-12-13 | 2022-10-11 | Beijing Summer Sprout Technology Co., Ltd. | Organic electroluminescent materials and devices |
CN109912619B (en) * | 2017-12-13 | 2022-05-20 | 北京夏禾科技有限公司 | Organic electroluminescent materials and devices |
US11466026B2 (en) | 2017-12-13 | 2022-10-11 | Beijing Summer Sprout Technology Co., Ltd. | Organic electroluminescent materials and devices |
US20190194234A1 (en) * | 2017-12-25 | 2019-06-27 | Chuanjun Xia | Metal complexes containing heterocycle substituted ligands, and electroluminescent devices and formulations containing the complexes |
KR102692181B1 (en) * | 2018-07-12 | 2024-08-06 | 에스에프씨 주식회사 | organic light-emitting diode with High efficiency and low voltage |
KR102605293B1 (en) * | 2018-08-07 | 2023-11-22 | 엘지디스플레이 주식회사 | Organic light emitting diode and organic light emitting device having the diode |
CN109148704B (en) * | 2018-08-20 | 2020-04-14 | 纳晶科技股份有限公司 | Quantum dot electroluminescent device and preparation method thereof |
KR20200072891A (en) * | 2018-12-13 | 2020-06-23 | 엘지디스플레이 주식회사 | Delayed fluorescence compound, and Organic light emitting diode and Organic light emitting display device including the same |
KR20200081977A (en) * | 2018-12-28 | 2020-07-08 | 엘지디스플레이 주식회사 | Organic light emitting diode and organic light emitting device having thereof |
KR20200131681A (en) * | 2019-05-14 | 2020-11-24 | 덕산네오룩스 주식회사 | An organic electronic element comprising compound for organic electronic element and an electronic device thereof |
KR20210075283A (en) * | 2019-12-12 | 2021-06-23 | 삼성디스플레이 주식회사 | Organic light-emitting device and apparatus including the same |
JP2023511463A (en) * | 2020-01-28 | 2023-03-20 | オーレッドワークス エルエルシー | Stacked OLED microdisplay with low voltage silicon backplane |
KR20220090037A (en) * | 2020-12-22 | 2022-06-29 | 엘지디스플레이 주식회사 | Organic metal compound, organic light emitting diode and organic light emitting device having the compound |
CN113299845A (en) * | 2021-06-11 | 2021-08-24 | 维沃移动通信有限公司 | Electroluminescent unit, display panel, and electronic device |
Citations (49)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3180730A (en) * | 1959-04-09 | 1965-04-27 | Azoplate Corp | Material for electrophotographic purposes |
US3567450A (en) * | 1968-02-20 | 1971-03-02 | Eastman Kodak Co | Photoconductive elements containing substituted triarylamine photoconductors |
US3658520A (en) * | 1968-02-20 | 1972-04-25 | Eastman Kodak Co | Photoconductive elements containing as photoconductors triarylamines substituted by active hydrogen-containing groups |
US4356429A (en) * | 1980-07-17 | 1982-10-26 | Eastman Kodak Company | Organic electroluminescent cell |
US4539507A (en) * | 1983-03-25 | 1985-09-03 | Eastman Kodak Company | Organic electroluminescent devices having improved power conversion efficiencies |
US4720432A (en) * | 1987-02-11 | 1988-01-19 | Eastman Kodak Company | Electroluminescent device with organic luminescent medium |
US4769292A (en) * | 1987-03-02 | 1988-09-06 | Eastman Kodak Company | Electroluminescent device with modified thin film luminescent zone |
US4768292A (en) * | 1985-05-22 | 1988-09-06 | Sevar Entsorgungsanlagen Gmbh | Method and apparatus for drying sewage sludge |
US4885221A (en) * | 1986-12-06 | 1989-12-05 | Kabushiki Kaisha Toshiba | Electrophotography apparatus and electrophtographic process for developing positive image from positive or negative film |
US5059861A (en) * | 1990-07-26 | 1991-10-22 | Eastman Kodak Company | Organic electroluminescent device with stabilizing cathode capping layer |
US5059862A (en) * | 1990-07-26 | 1991-10-22 | Eastman Kodak Company | Electroluminescent device with improved cathode |
US5061569A (en) * | 1990-07-26 | 1991-10-29 | Eastman Kodak Company | Electroluminescent device with organic electroluminescent medium |
US5121029A (en) * | 1987-12-11 | 1992-06-09 | Idemitsu Kosan Co., Ltd. | Electroluminescence device having an organic electroluminescent element |
US5141671A (en) * | 1991-08-01 | 1992-08-25 | Eastman Kodak Company | Mixed ligand 8-quinolinolato aluminum chelate luminophors |
US5150006A (en) * | 1991-08-01 | 1992-09-22 | Eastman Kodak Company | Blue emitting internal junction organic electroluminescent device (II) |
US5151629A (en) * | 1991-08-01 | 1992-09-29 | Eastman Kodak Company | Blue emitting internal junction organic electroluminescent device (I) |
US5276380A (en) * | 1991-12-30 | 1994-01-04 | Eastman Kodak Company | Organic electroluminescent image display device |
US5294870A (en) * | 1991-12-30 | 1994-03-15 | Eastman Kodak Company | Organic electroluminescent multicolor image display device |
US5405709A (en) * | 1993-09-13 | 1995-04-11 | Eastman Kodak Company | White light emitting internal junction organic electroluminescent device |
US5484922A (en) * | 1992-07-13 | 1996-01-16 | Eastman Kodak Company | Internal junction organic electroluminescent device with a novel composition |
US5593788A (en) * | 1996-04-25 | 1997-01-14 | Eastman Kodak Company | Organic electroluminescent devices with high operational stability |
US5677572A (en) * | 1996-07-29 | 1997-10-14 | Eastman Kodak Company | Bilayer electrode on a n-type semiconductor |
US5683823A (en) * | 1996-01-26 | 1997-11-04 | Eastman Kodak Company | White light-emitting organic electroluminescent devices |
US5703436A (en) * | 1994-12-13 | 1997-12-30 | The Trustees Of Princeton University | Transparent contacts for organic devices |
US5707745A (en) * | 1994-12-13 | 1998-01-13 | The Trustees Of Princeton University | Multicolor organic light emitting devices |
US5755999A (en) * | 1997-05-16 | 1998-05-26 | Eastman Kodak Company | Blue luminescent materials for organic electroluminescent devices |
US5776623A (en) * | 1996-07-29 | 1998-07-07 | Eastman Kodak Company | Transparent electron-injecting electrode for use in an electroluminescent device |
US5851709A (en) * | 1997-10-31 | 1998-12-22 | Eastman Kodak Company | Method for selective transfer of a color organic layer |
US5928802A (en) * | 1997-05-16 | 1999-07-27 | Eastman Kodak Company | Efficient blue organic electroluminescent devices |
US5935721A (en) * | 1998-03-20 | 1999-08-10 | Eastman Kodak Company | Organic electroluminescent elements for stable electroluminescent |
US5935720A (en) * | 1997-04-07 | 1999-08-10 | Eastman Kodak Company | Red organic electroluminescent devices |
US5972247A (en) * | 1998-03-20 | 1999-10-26 | Eastman Kodak Company | Organic electroluminescent elements for stable blue electroluminescent devices |
US6020078A (en) * | 1998-12-18 | 2000-02-01 | Eastman Kodak Company | Green organic electroluminescent devices |
US6066357A (en) * | 1998-12-21 | 2000-05-23 | Eastman Kodak Company | Methods of making a full-color organic light-emitting display |
US6107734A (en) * | 1998-05-20 | 2000-08-22 | Idemitsu Kosan Co., Ltd. | Organic EL light emitting element with light emitting layers and intermediate conductive layer |
US6140763A (en) * | 1998-07-28 | 2000-10-31 | Eastman Kodak Company | Interfacial electron-injecting layer formed from a doped cathode for organic light-emitting structure |
US6208075B1 (en) * | 1998-11-05 | 2001-03-27 | Eastman Kodak Company | Conductive fluorocarbon polymer and method of making same |
US6226890B1 (en) * | 2000-04-07 | 2001-05-08 | Eastman Kodak Company | Desiccation of moisture-sensitive electronic devices |
US6237529B1 (en) * | 2000-03-03 | 2001-05-29 | Eastman Kodak Company | Source for thermal physical vapor deposition of organic electroluminescent layers |
US20010009280A1 (en) * | 2000-01-21 | 2001-07-26 | Nec Corporation | Organic electroluminescence display device |
US6274980B1 (en) * | 1998-11-16 | 2001-08-14 | The Trustees Of Princeton University | Single-color stacked organic light emitting device |
US6329085B1 (en) * | 1996-07-02 | 2001-12-11 | The Trustees Of Princeton University | Red-emitting organic light emitting devices (OLED's) |
US6337492B1 (en) * | 1997-07-11 | 2002-01-08 | Emagin Corporation | Serially-connected organic light emitting diode stack having conductors sandwiching each light emitting layer |
US20030170491A1 (en) * | 2002-02-15 | 2003-09-11 | Eastman Kodak Company | Providing an organic electroluminescent device having stacked electroluminescent units |
US6717358B1 (en) * | 2002-10-09 | 2004-04-06 | Eastman Kodak Company | Cascaded organic electroluminescent devices with improved voltage stability |
US6933520B2 (en) * | 2002-02-13 | 2005-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US6940222B2 (en) * | 2001-09-19 | 2005-09-06 | Kabushiki Kaisha Toshiba | Self-emitting display apparatus having variable light emission area |
US7030553B2 (en) * | 2003-08-19 | 2006-04-18 | Eastman Kodak Company | OLED device having microcavity gamut subpixels and a within gamut subpixel |
US7113154B1 (en) * | 1999-11-29 | 2006-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3813217B2 (en) | 1995-03-13 | 2006-08-23 | パイオニア株式会社 | Method for manufacturing organic electroluminescence display panel |
US5645948A (en) | 1996-08-20 | 1997-07-08 | Eastman Kodak Company | Blue organic electroluminescent devices |
EP0891121B8 (en) | 1996-12-28 | 2013-01-02 | Futaba Corporation | Organic electroluminescent elements |
JPH10270171A (en) * | 1997-01-27 | 1998-10-09 | Junji Kido | Organic electroluminescent element |
ATE308224T1 (en) * | 1997-03-19 | 2005-11-15 | Fuji Photo Film Co Ltd | ELECTROLUMINescent DEVICE |
GB9711237D0 (en) | 1997-06-02 | 1997-07-23 | Isis Innovation | Organomettallic Complexes |
JPH11251067A (en) * | 1998-03-02 | 1999-09-17 | Junji Kido | Organic electroluminescence element |
CN1213127C (en) | 1998-09-09 | 2005-08-03 | 出光兴产株式会社 | Organic electroluminescent device and phenylenediamine derivative |
GB9820805D0 (en) | 1998-09-25 | 1998-11-18 | Isis Innovation | Divalent lanthanide metal complexes |
US6361886B2 (en) | 1998-12-09 | 2002-03-26 | Eastman Kodak Company | Electroluminescent device with improved hole transport layer |
KR20100042665A (en) | 1999-03-23 | 2010-04-26 | 유니버시티 오브 서던 캘리포니아 | Cyclometallated metal complexes as phosphorescent dopants in organic leds |
DE60031729T2 (en) | 1999-05-13 | 2007-09-06 | The Trustees Of Princeton University | LIGHT-EMITTING, ORGANIC, ELECTROPHOSPHORESCENCE-BASED ARRANGEMENT WITH VERY HIGH QUANTITY LOSSES |
JP4611578B2 (en) * | 2001-07-26 | 2011-01-12 | 淳二 城戸 | Organic electroluminescent device |
JP2003264085A (en) * | 2001-12-05 | 2003-09-19 | Semiconductor Energy Lab Co Ltd | Organic semiconductor element, organic electroluminescence element and organic solar cell |
SG176316A1 (en) * | 2001-12-05 | 2011-12-29 | Semiconductor Energy Lab | Organic semiconductor element |
US6991859B2 (en) * | 2003-03-18 | 2006-01-31 | Eastman Kodak Company | Cascaded organic electroluminescent devices |
-
2002
- 2002-02-15 US US10/077,270 patent/US6872472B2/en not_active Expired - Lifetime
- 2002-12-31 TW TW091138047A patent/TWI264240B/en not_active IP Right Cessation
-
2003
- 2003-02-03 EP EP03075309A patent/EP1339112B1/en not_active Expired - Lifetime
- 2003-02-14 JP JP2003036670A patent/JP4570014B2/en not_active Expired - Lifetime
- 2003-02-15 KR KR1020030009622A patent/KR100911555B1/en active IP Right Grant
- 2003-02-17 CN CNB031038980A patent/CN100483728C/en not_active Expired - Lifetime
-
2004
- 2004-09-02 US US10/932,761 patent/US20050029933A1/en not_active Abandoned
Patent Citations (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3180730A (en) * | 1959-04-09 | 1965-04-27 | Azoplate Corp | Material for electrophotographic purposes |
US3567450A (en) * | 1968-02-20 | 1971-03-02 | Eastman Kodak Co | Photoconductive elements containing substituted triarylamine photoconductors |
US3658520A (en) * | 1968-02-20 | 1972-04-25 | Eastman Kodak Co | Photoconductive elements containing as photoconductors triarylamines substituted by active hydrogen-containing groups |
US4356429A (en) * | 1980-07-17 | 1982-10-26 | Eastman Kodak Company | Organic electroluminescent cell |
US4539507A (en) * | 1983-03-25 | 1985-09-03 | Eastman Kodak Company | Organic electroluminescent devices having improved power conversion efficiencies |
US4768292A (en) * | 1985-05-22 | 1988-09-06 | Sevar Entsorgungsanlagen Gmbh | Method and apparatus for drying sewage sludge |
US4885221A (en) * | 1986-12-06 | 1989-12-05 | Kabushiki Kaisha Toshiba | Electrophotography apparatus and electrophtographic process for developing positive image from positive or negative film |
US4720432A (en) * | 1987-02-11 | 1988-01-19 | Eastman Kodak Company | Electroluminescent device with organic luminescent medium |
US4769292A (en) * | 1987-03-02 | 1988-09-06 | Eastman Kodak Company | Electroluminescent device with modified thin film luminescent zone |
US5121029A (en) * | 1987-12-11 | 1992-06-09 | Idemitsu Kosan Co., Ltd. | Electroluminescence device having an organic electroluminescent element |
US5059862A (en) * | 1990-07-26 | 1991-10-22 | Eastman Kodak Company | Electroluminescent device with improved cathode |
US5061569A (en) * | 1990-07-26 | 1991-10-29 | Eastman Kodak Company | Electroluminescent device with organic electroluminescent medium |
US5059861A (en) * | 1990-07-26 | 1991-10-22 | Eastman Kodak Company | Organic electroluminescent device with stabilizing cathode capping layer |
US5141671A (en) * | 1991-08-01 | 1992-08-25 | Eastman Kodak Company | Mixed ligand 8-quinolinolato aluminum chelate luminophors |
US5150006A (en) * | 1991-08-01 | 1992-09-22 | Eastman Kodak Company | Blue emitting internal junction organic electroluminescent device (II) |
US5151629A (en) * | 1991-08-01 | 1992-09-29 | Eastman Kodak Company | Blue emitting internal junction organic electroluminescent device (I) |
US5276380A (en) * | 1991-12-30 | 1994-01-04 | Eastman Kodak Company | Organic electroluminescent image display device |
US5294870A (en) * | 1991-12-30 | 1994-03-15 | Eastman Kodak Company | Organic electroluminescent multicolor image display device |
US5484922A (en) * | 1992-07-13 | 1996-01-16 | Eastman Kodak Company | Internal junction organic electroluminescent device with a novel composition |
US5405709A (en) * | 1993-09-13 | 1995-04-11 | Eastman Kodak Company | White light emitting internal junction organic electroluminescent device |
US5707745A (en) * | 1994-12-13 | 1998-01-13 | The Trustees Of Princeton University | Multicolor organic light emitting devices |
US5703436A (en) * | 1994-12-13 | 1997-12-30 | The Trustees Of Princeton University | Transparent contacts for organic devices |
US5683823A (en) * | 1996-01-26 | 1997-11-04 | Eastman Kodak Company | White light-emitting organic electroluminescent devices |
US5593788A (en) * | 1996-04-25 | 1997-01-14 | Eastman Kodak Company | Organic electroluminescent devices with high operational stability |
US6329085B1 (en) * | 1996-07-02 | 2001-12-11 | The Trustees Of Princeton University | Red-emitting organic light emitting devices (OLED's) |
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US5851709A (en) * | 1997-10-31 | 1998-12-22 | Eastman Kodak Company | Method for selective transfer of a color organic layer |
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US6274980B1 (en) * | 1998-11-16 | 2001-08-14 | The Trustees Of Princeton University | Single-color stacked organic light emitting device |
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US7113154B1 (en) * | 1999-11-29 | 2006-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
US20010009280A1 (en) * | 2000-01-21 | 2001-07-26 | Nec Corporation | Organic electroluminescence display device |
US6237529B1 (en) * | 2000-03-03 | 2001-05-29 | Eastman Kodak Company | Source for thermal physical vapor deposition of organic electroluminescent layers |
US6226890B1 (en) * | 2000-04-07 | 2001-05-08 | Eastman Kodak Company | Desiccation of moisture-sensitive electronic devices |
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US6933520B2 (en) * | 2002-02-13 | 2005-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20030170491A1 (en) * | 2002-02-15 | 2003-09-11 | Eastman Kodak Company | Providing an organic electroluminescent device having stacked electroluminescent units |
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US7030553B2 (en) * | 2003-08-19 | 2006-04-18 | Eastman Kodak Company | OLED device having microcavity gamut subpixels and a within gamut subpixel |
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US8183559B2 (en) | 2002-05-21 | 2012-05-22 | Semiconductor Energy Laboratory Co., Ltd. | Organic field effect transistor |
US20030218166A1 (en) * | 2002-05-21 | 2003-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Organic field effect transistor |
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US8339036B2 (en) | 2002-08-09 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Organic electroluminescent device |
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US9209419B2 (en) | 2002-08-09 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Organic electroluminescent device |
US20080150420A1 (en) * | 2002-08-09 | 2008-06-26 | Semiconductor Energy Laboratory Co., Ltd. | Organic Electroluminescent Device |
US20040027059A1 (en) * | 2002-08-09 | 2004-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Organic electroluminescent device |
US20070007882A1 (en) * | 2003-07-02 | 2007-01-11 | Idemitsu Kosan Co., Ltd. | Organic electroluminescent device and display using same |
US8007924B2 (en) | 2003-07-02 | 2011-08-30 | Idemitsu Kosan Co., Ltd. | Organic electroluminescent device and display using same |
US20050134173A1 (en) * | 2003-08-25 | 2005-06-23 | Tetsuo Tsutsui | Electrode device for organic device and electronic device having the same |
US20090230856A1 (en) * | 2003-08-25 | 2009-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Electrode device for organic device and electronic device having the same |
US7511421B2 (en) | 2003-08-25 | 2009-03-31 | Semiconductor Energy Laboratory Co., Ltd. | Mixed metal and organic electrode for organic device |
US8629429B2 (en) | 2003-08-25 | 2014-01-14 | Semiconductor Energy Laboratory Co., Ltd. | Electrode device for organic device and electronic device having the same |
US20110215311A1 (en) * | 2003-08-25 | 2011-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Electrode Device for Organic Device and Electronic Device Having the Same |
US8018152B2 (en) | 2004-05-20 | 2011-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element including intermediate conductive layer having a hole-injection layer with an island-like structure |
US8339039B2 (en) | 2004-05-20 | 2012-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element including intermediate conductive layer having an electron-injection layer with an island-like structure |
US8643270B2 (en) | 2004-05-20 | 2014-02-04 | Semiconductor Energy Laboratory Co., Inc. | Light-emitting element and display device |
US20070222379A1 (en) * | 2004-05-20 | 2007-09-27 | Shunpei Yamazaki | Light-Emitting Element and Display Device |
US8922116B2 (en) | 2004-05-21 | 2014-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element and light emitting device |
US7663140B2 (en) | 2004-05-21 | 2010-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element and light emitting device using the element |
US20080135858A1 (en) * | 2004-05-21 | 2008-06-12 | Smiconductor Energy Laboratory Co., Ltd. | Light Emitting Element and Light Emitting Device Using the Element |
US8344621B2 (en) | 2004-05-21 | 2013-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element and light emitting device |
US20070182318A1 (en) * | 2004-05-21 | 2007-08-09 | Daisuke Kumaki | Light emitting element and light emitting device |
US8076671B2 (en) | 2004-05-21 | 2011-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element and light emitting device using the element |
US20100033090A1 (en) * | 2004-05-21 | 2010-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Light Emitting Element and Light Emitting Device |
US20100140607A1 (en) * | 2004-05-21 | 2010-06-10 | Semiconductor Energy Laboratory Co., Ltd. | Light Emitting Element and Light Emitting Device Using the Element |
US7940002B2 (en) | 2004-05-21 | 2011-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element and light emitting device |
US7598670B2 (en) | 2004-05-21 | 2009-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element and light emitting device |
US8536569B2 (en) | 2004-05-21 | 2013-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element and light emitting device using the element |
US20050274960A1 (en) * | 2004-06-14 | 2005-12-15 | Seiko Epson Corporation | Light-emitting device, electronic apparatus, projection-type display device, line head, and image forming device |
US20060289882A1 (en) * | 2004-07-30 | 2006-12-28 | Kazuki Nishimura | Organic electroluminescent element and organic electroluminescent display device |
US7964891B2 (en) | 2004-08-04 | 2011-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, display device, and electronic appliance |
US20090079342A1 (en) * | 2004-08-04 | 2009-03-26 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, display device, and electronic appliance |
US8618574B2 (en) | 2004-08-04 | 2013-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, display device, and electronic appliance |
US8653537B2 (en) | 2004-08-13 | 2014-02-18 | Novaled Ag | Layer assembly for a light-emitting component |
US8912718B2 (en) | 2004-09-13 | 2014-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device with a plurality of circuits connected in parallel |
US20070114544A1 (en) * | 2004-09-24 | 2007-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US8008652B2 (en) | 2004-09-24 | 2011-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US8643003B2 (en) | 2004-09-24 | 2014-02-04 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US9461258B2 (en) | 2004-12-16 | 2016-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electronic device using the same |
US10475856B2 (en) | 2004-12-16 | 2019-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electronic device using the same |
US20070008257A1 (en) * | 2004-12-16 | 2007-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electronic device using the same |
US8803853B2 (en) | 2004-12-16 | 2014-08-12 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electronic device using the same |
US7494722B2 (en) | 2005-02-23 | 2009-02-24 | Eastman Kodak Company | Tandem OLED having an organic intermediate connector |
EP1851801A1 (en) | 2005-02-23 | 2007-11-07 | Eastman Kodak Company | Tandem oled having an organic intermediate connector |
US20060188745A1 (en) * | 2005-02-23 | 2006-08-24 | Eastman Kodak Company | Tandem OLED having an organic intermediate connector |
WO2006091560A1 (en) * | 2005-02-23 | 2006-08-31 | Eastman Kodak Company | Tandem oled having an organic intermediate connector |
US20090230844A1 (en) * | 2005-03-15 | 2009-09-17 | Novaled Ag | Light-emitting component |
US7986090B2 (en) | 2005-03-15 | 2011-07-26 | Novaled Ag | Light-emitting component |
US8420227B2 (en) | 2005-03-23 | 2013-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Composite material, light emitting element and light emitting device |
US20080191611A1 (en) * | 2005-03-23 | 2008-08-14 | Semiconductor Energy Laboratory Co., Ltd. | Composite Material, Light Emitting Element and Light Emitting Device |
US8916276B2 (en) | 2005-03-23 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Composite material, light emitting element and light emitting device |
US7911129B2 (en) | 2005-04-13 | 2011-03-22 | Novaled Ag | Arrangement for an organic pin-type light-emitting diode and method for manufacturing |
US20060240277A1 (en) * | 2005-04-20 | 2006-10-26 | Eastman Kodak Company | Tandem OLED device |
US20060244371A1 (en) * | 2005-05-02 | 2006-11-02 | Eastman Kodak Company | OLED device having improved lifetime and output |
US9166197B2 (en) * | 2005-08-29 | 2015-10-20 | The Hong Kong University Of Science And Technology | Metallic anode treated by carbon tetrafluoride plasma for organic light emitting device |
US20070046183A1 (en) * | 2005-08-29 | 2007-03-01 | Kwok Hoi S | Metallic anode treated by carbon tetrafluoride plasma for organic light emitting device |
US20070046189A1 (en) * | 2005-08-31 | 2007-03-01 | Eastman Kodak Company | Intermediate connector for a tandem OLED device |
US20070063192A1 (en) * | 2005-09-20 | 2007-03-22 | Toppoly Optoelectronics Corp. | Systems for emitting light incorporating pixel structures of organic light-emitting diodes |
US20070085070A1 (en) * | 2005-10-17 | 2007-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Lighting system |
US8154192B2 (en) | 2005-10-17 | 2012-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Lighting system |
US8441184B2 (en) | 2005-10-17 | 2013-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Lighting system |
US8021763B2 (en) | 2005-11-23 | 2011-09-20 | The Trustees Of Princeton University | Phosphorescent OLED with interlayer |
US20070116983A1 (en) * | 2005-11-23 | 2007-05-24 | Hiroshi Kanno | Phosphorescent OLED with interlayer |
US20070126348A1 (en) * | 2005-12-01 | 2007-06-07 | Au Optronics Corp. | Organic electroluminescent device |
US9112175B2 (en) | 2005-12-21 | 2015-08-18 | Novaled Ag | Organic component |
US20090009071A1 (en) * | 2005-12-21 | 2009-01-08 | Sven Murano | Organic Component |
US20070159073A1 (en) * | 2005-12-22 | 2007-07-12 | Matsushita Electric Industrial Co., Ltd. | Electroluminescent device, display apparatus, exposure apparatus, and lighting apparatus using the same |
US7830089B2 (en) | 2005-12-23 | 2010-11-09 | Novaled Ag | Electronic device with a layer structure of organic layers |
US20090045728A1 (en) * | 2005-12-23 | 2009-02-19 | Sven Murano | Electronic device with a layer structure of organic layers |
US20090009072A1 (en) * | 2005-12-23 | 2009-01-08 | Philipp Wellmann | Organic Light Emitting Device With a Plurality of Organic Electroluminescent Units Stacked Upon Each Other |
US8502200B2 (en) | 2006-01-11 | 2013-08-06 | Novaled Ag | Electroluminescent light-emitting device comprising an arrangement of organic layers, and method for its production |
US7914906B2 (en) * | 2006-01-13 | 2011-03-29 | Au Optronics Corp. | Organic electro-luminescence device |
US20070166567A1 (en) * | 2006-01-13 | 2007-07-19 | Au Optronics Corp. | Organic electro-luminescence device |
US20090009101A1 (en) * | 2006-01-18 | 2009-01-08 | Kang Min-Soo | Oled Having Stacked Organic Light-Emitting Units |
US8680693B2 (en) * | 2006-01-18 | 2014-03-25 | Lg Chem. Ltd. | OLED having stacked organic light-emitting units |
US20070205411A1 (en) * | 2006-03-06 | 2007-09-06 | Fujifilm Corporation | Organic electroluminescence device |
US8017254B2 (en) | 2006-03-06 | 2011-09-13 | Fujifilm Corporation | Organic electroluminescence device |
US8569743B2 (en) | 2006-04-19 | 2013-10-29 | Novaled Ag | Light-emitting component |
US20100065825A1 (en) * | 2006-04-19 | 2010-03-18 | Novaled Ag | Light-Emitting Component |
US20080261075A1 (en) * | 2006-12-04 | 2008-10-23 | Semiconductor Energy Laboratory Co., Ltd. | Light Emitting Element, Light Emitting Device, and Electronic Device |
US9397308B2 (en) | 2006-12-04 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element, light emitting device, and electronic device |
US8254165B2 (en) | 2007-04-17 | 2012-08-28 | Novaled Ag | Organic electronic memory component, memory component arrangement and method for operating an organic electronic memory component |
US20100135073A1 (en) * | 2007-04-17 | 2010-06-03 | Novaled Ag | Organic electronic memory component, memory component arrangement and method for operating an organic electronic memory component |
US7911133B2 (en) | 2007-05-10 | 2011-03-22 | Global Oled Technology Llc | Electroluminescent device having improved light output |
US20080278067A1 (en) * | 2007-05-10 | 2008-11-13 | Yuan-Sheng Tyan | Electroluminescent device having improved light output |
US8637853B2 (en) * | 2007-10-24 | 2014-01-28 | Merck Patent Gmbh | Optoelectronic device |
US20110068329A1 (en) * | 2007-10-24 | 2011-03-24 | Merck Patent Gmbh | Optoelectronic device |
US20110057176A1 (en) * | 2008-01-18 | 2011-03-10 | Kang Min-Soo | Organic luminescent device and a production method for the same |
US8686403B2 (en) | 2008-01-18 | 2014-04-01 | Lg Chem Ltd. | Organic luminescent device including a first electrode, two or more organic layers and a second electrode and a production method for the same |
US20090315455A1 (en) * | 2008-06-20 | 2009-12-24 | Innolux Display Corp. | Oled Display Device and Method for Fabricating Same |
TWI414064B (en) * | 2008-07-11 | 2013-11-01 | Innolux Corp | Oled display device and method for fabricating the same |
US8372526B2 (en) * | 2008-07-16 | 2013-02-12 | Universal Display Corporation | Intermediate connector for stacked organic light emitting devices |
US20100013378A1 (en) * | 2008-07-16 | 2010-01-21 | Universal Display Corporation | Intermediate connector for stacked organic light emitting devices |
US8071976B2 (en) | 2008-08-04 | 2011-12-06 | Novaled Ag | Organic field-effect transistor and circuit |
US8212241B2 (en) | 2008-08-04 | 2012-07-03 | Novaled Ag | Organic field-effect transistor |
US20100051923A1 (en) * | 2008-08-04 | 2010-03-04 | Novaled Ag | Organischer Feldeffekt Transistor |
US9065067B2 (en) | 2008-10-28 | 2015-06-23 | The Regents Of The University Of Michigan | Stacked white OLED having separate red, green and blue sub-elements |
US8766291B2 (en) | 2008-10-28 | 2014-07-01 | The Regents Of The University Of Michigan | Stacked white OLED having separate red, green and blue sub-elements |
US20110031476A1 (en) * | 2009-08-05 | 2011-02-10 | Yamagata Promotional Organization For Industrial Technology | Organic electroluminescence element |
US8883553B2 (en) * | 2009-10-05 | 2014-11-11 | Emagin Corporation | Independently controlled stacked inverted organic light emitting diodes and a method of manufacturing same |
US20130033199A1 (en) * | 2009-10-05 | 2013-02-07 | Emagin Corporation | Independently controlled stacked inverted organic light emitting diodes and a method of manufacturing same |
US20120193619A1 (en) * | 2009-10-14 | 2012-08-02 | Konica Minolta Holdings, Inc. | Organic electroluminescent element and lighting device using same |
US9516713B2 (en) | 2011-01-25 | 2016-12-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
US12108658B2 (en) | 2011-02-28 | 2024-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
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US10411212B2 (en) | 2011-10-04 | 2019-09-10 | Idemitsu Kosan Co., Ltd. | Organic electroluminescent element |
US9478593B2 (en) | 2011-11-04 | 2016-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting module and light-emitting device |
US10573823B2 (en) | 2012-03-29 | 2020-02-25 | Joled Inc | Organic electroluminescent device |
US11730052B2 (en) | 2013-03-18 | 2023-08-15 | Idemitsu Kosan Co., Ltd. | Light-emitting device |
US9666822B2 (en) | 2013-12-17 | 2017-05-30 | The Regents Of The University Of Michigan | Extended OLED operational lifetime through phosphorescent dopant profile management |
US9887250B2 (en) | 2014-03-20 | 2018-02-06 | Joled Inc. | Organic el display panel with second blue emitter, display device provided therewith, and method for manufacturing organic el display panel |
US9780321B2 (en) | 2014-03-20 | 2017-10-03 | Joled Inc. | Organic EL display panel, display device incorporating same, and organic EL display panel manufacturing method |
US10243166B2 (en) * | 2015-02-17 | 2019-03-26 | Pioneer Corporation | Light-emitting device with stacked layers |
US20180040844A1 (en) * | 2015-02-17 | 2018-02-08 | Pioneer Corporation | Light-emitting device |
US9899621B2 (en) * | 2015-05-04 | 2018-02-20 | Boe Technology Group Co., Ltd. | Organic light emitting diode and display device thereof |
US20170125716A1 (en) * | 2015-05-04 | 2017-05-04 | Boe Technology Group Co., Ltd. | Organic light emitting diode and display device thereof |
CN107452882A (en) * | 2016-05-30 | 2017-12-08 | 诺瓦尔德股份有限公司 | Organic Light Emitting Diode comprising organic semiconductor layer |
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CN112687811A (en) * | 2019-10-17 | 2021-04-20 | 北京夏禾科技有限公司 | Organic electroluminescent device |
DE102020127362B4 (en) | 2019-10-17 | 2024-02-08 | Beijing Summer Sprout Technology Co., Ltd. | ORGANIC ELECTROLUMINESCENCE DEVICE |
EP3848989A1 (en) * | 2020-01-09 | 2021-07-14 | Samsung Display Co., Ltd. | Organic light-emitting device |
US11968888B2 (en) | 2020-06-15 | 2024-04-23 | Samsung Display Co., Ltd. | Organic light-emitting device and electronic apparatus including the same |
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US6872472B2 (en) | 2005-03-29 |
JP2004039617A (en) | 2004-02-05 |
KR20030069097A (en) | 2003-08-25 |
EP1339112A3 (en) | 2006-09-13 |
CN1438828A (en) | 2003-08-27 |
JP4570014B2 (en) | 2010-10-27 |
US20030170491A1 (en) | 2003-09-11 |
TW200302994A (en) | 2003-08-16 |
TWI264240B (en) | 2006-10-11 |
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EP1339112A2 (en) | 2003-08-27 |
KR100911555B1 (en) | 2009-08-10 |
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Owner name: EASTMAN KODAK COMPANY, NEW YORK Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LIAO, LIANG-SHENG;TANG, CHING W.;COK, RONALD S.;AND OTHERS;REEL/FRAME:015808/0115;SIGNING DATES FROM 20040824 TO 20040901 |
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STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |