US20040188321A1 - Wafer holder for semiconductor manufacturing device and semiconductor manufacturing device in which it is installed - Google Patents

Wafer holder for semiconductor manufacturing device and semiconductor manufacturing device in which it is installed Download PDF

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Publication number
US20040188321A1
US20040188321A1 US10/604,514 US60451403A US2004188321A1 US 20040188321 A1 US20040188321 A1 US 20040188321A1 US 60451403 A US60451403 A US 60451403A US 2004188321 A1 US2004188321 A1 US 2004188321A1
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wafer holder
wafer
circuit
semiconductor manufacturing
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US10/604,514
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Masuhiro Natsuhara
Hirohiko Nakata
Manabu Hashikura
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Assigned to SUMITOMO ELECTRIC INDUSTRIES, LTD. reassignment SUMITOMO ELECTRIC INDUSTRIES, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HASHIKURA, MANABU, NAKATA, HIROHIKO, NATSUHARA, MASUHIRO
Publication of US20040188321A1 publication Critical patent/US20040188321A1/en
Priority to US12/367,558 priority Critical patent/US20090142479A1/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Definitions

  • the present invention relates to wafer holders employed in semiconductor manufacturing devices such as plasma-assisted CVD, low-pressure CVD, metal CVD, dielectric-film CVD, ion-implantation, etching, Low-K film heat treatment, and degassing heat treatment device, and furthermore to process chambers and semiconductor manufacturing devices in which the wafer holders are installed.
  • semiconductor manufacturing devices such as plasma-assisted CVD, low-pressure CVD, metal CVD, dielectric-film CVD, ion-implantation, etching, Low-K film heat treatment, and degassing heat treatment device, and furthermore to process chambers and semiconductor manufacturing devices in which the wafer holders are installed.
  • Japanese Pat. App. Pub. No. H04-78138 discloses a conventional ceramic susceptor of this sort.
  • the ceramic susceptor includes: a heater part made of ceramic, into which a resistive heating element is embedded and that is provided with a wafer-heating surface, arranged within a chamber; a columnar support part that is provided on a surface apart from the wafer-heating surface of the heating section and that forms a gastight seal between it and the chamber; and electrodes connected to the resistive heating element and leading outside the chamber so as essentially not to be exposed to the chamber interior space.
  • the invention serves to remedy the contamination and poor thermal efficiency that had been seen with heaters made of metal—heaters prior to the invention—it does not touch upon warping of or cracking in ceramic susceptors. Wafers are processed at high temperatures in semiconductor manufacturing equipment, however, which means that the ceramic susceptors are heated to high temperatures. Given the circumstances, a problem has been that warping in the ceramic susceptor, arising in the thermal characteristics of its electrical circuitry, will occur, leading to breaches in between the wafer and the wafer-retaining face and making it improbable that the temperature of the wafer face will be uniform.
  • Japanese Pat. App. Pub. No. 2001-302330 discloses a technique for resolving the problems of warping and cracking in ceramic substrates.
  • the invention has it that by strictly controlling the thickness of both the ceramic substrate and the electrical circuitry, warping and cracking in the ceramic substrate can be prevented. Nevertheless, with strict control of the thickness of the ceramic substrate and the electrical circuitry layer meaning higher costs, it has been difficult to realize inexpensive ceramic susceptors.
  • electrical circuits moreover, there are various kinds; and depending on what they are targeted for, there are various circuit patterns. For example, with resistive heating element circuits, the configuration would be a coil; with RF electrode circuits, the configuration would be a continuous single-ply sheet.
  • an object of the present invention is to realize for semiconductor manufacturing equipment a wafer holder in which incidence of warping and cracking is slight when heated to high temperatures, and semiconductor manufacturing equipment in which the wafer holder is installed.
  • an electrical circuit layer consisting of one or more sinter laminae is formed on the face or in the interior of the wafer holder, which is characterized in that pores are present in the circuit layer.
  • the main constituent of the circuit layer be one or more metals selected from tungsten, molybdenum and tantalum, and that the porosity thereof be 0.1% or more.
  • the main constituent of the circuit layer be one or more metals selected from silver, vanadium and platinum, and that the porosity thereof be 2% or more.
  • the electrical circuitry be any one, or a plurality, of: an electrode circuit for an electrostatic chuck, a resistive-heating-element circuit, an RF-power electrode circuit, and a high-voltage-generating electrode circuit; more preferable is that the circuitry include at least a resistive-heating-element circuit.
  • FIGURE illustrates one example of the sectional structure of a wafer holder according to the present invention.
  • the present inventors discovered that imparting pores in electrical circuitry made of a sinter, formed on the face or in the interior of the wafer holder, and controlling the porosity thereof makes for preventing warping and cracking in the wafer holder.
  • the electrical circuitry may be circuits such as an electrostatic-chuck electrode circuit for electrostatically chucking wafers, a resistive-heating-element circuit (heater circuit) for heating the wafer holder, or an RF electrode circuit for generating plasma, and furthermore may be a high-voltage circuit for ion-beam irradiation. While the circuitry preferably is equipped at least with a resistive-heating-element circuit, it may be equipped with a resistive-heating-element circuit and at the same time another circuit—for example, so as to be equipped with a resistive-heating-element circuit 2 and an RF electrode circuit 3 as illustrated in the figure.
  • circuitry is the usual densified material, when it has expanded thermally internal stress will be produced, and warping will arise, by just that difference with the ceramic in the extent of its thermal expansion. If, however, pores are present in the circuitry, the pores presumably absorb the difference in thermal expansion, mitigating the internal stress. Mitigating the internal stress would be what can prevent the occurrence of warping. It will be realized that the occurrence of warping can be prevented inasmuch as the internal stress is mitigated.
  • the porosity should be 0.1% or more.
  • the main constituent of the circuitry is made one or more metals selected from silver, vanadium and platinum, the porosity should be 2% or more.
  • That a difference in porosity will appear depending on what the metal substance is in the circuitry reflects the disparity in how great the difference between the thermal expansion coefficient of the metal and of the ceramic is.
  • the main constituent is made tungsten, molybdenum and tantalum, whose differences in thermal expansion coefficient with ceramics are slight, the effects described above will be brought out if the porosity is at least 0.1%.
  • the main constituent of the circuitry is made one or more metals selected from silver, vanadium and platinum, whose differences in thermal expansion coefficient with ceramics are great, if the porosity is not made a considerable 2% or more, the effects will not appear.
  • the substances for a wafer holder according to the present invention are insulative ceramics, they are not particularly restricted, but aluminum nitride (AlN) is preferable for its high thermal conductivity and superior corrosion resistance.
  • AlN aluminum nitride
  • An AlN raw-material powder whose specific surface area is 2.0 to 5.0 m 2 /g is preferable.
  • the sinterability of the aluminum nitride declines if the specific surface area is less than 2.0 m 2 /g. Handling proves to be a problem if on the other hand the specific surface area is over 5.0 m 2 /g, because the powder coherence becomes extremely strong.
  • the quantity of oxygen contained in the raw-material powder is preferably 2 wt. % or less. In sintered form, its thermal conductivity deteriorates if the oxygen quantity is in excess of 2 wt. %. It is also preferable that the amount of metal impurities contained in the raw-material powder other than aluminum be 2000 ppm or less.
  • the thermal conductivity of the powder in sintered form deteriorates if the amount of metal impurities exceeds this range.
  • the content respectively of Group IV elements such as Si, and elements of the iron family, such as Fe, which have a serious worsening effect on the thermal conductivity of the sinter is advisably 500 ppm or less.
  • the sintering promoter added preferably is a rare-earth element compound. Since rare-earth element compounds react with aluminum oxides or aluminum oxynitrides present on the surface of the particles of the aluminum nitride powder, acting to promote densification of the aluminum nitride and to eliminate oxygen being a causative factor that worsens the thermal conductivity of an aluminum nitride sinter, they enable the thermal conductivity of aluminum sinters to be improved.
  • Yttrium compounds whose oxygen-eliminating action is particularly pronounced, are preferable rare-earth element compounds.
  • the amount added is preferably 0.01 to 5 wt. %. If less than 0.01 wt. %, producing ultrafine sinters is problematic, along with which the thermal conductivity of the sinters deteriorates. Added amounts in excess of 5 wt. % on the other hand lead to sintering promoter being present at the grain boundaries in an aluminum nitride sinter, and consequently, if the aluminum nitride sinter is employed under a corrosive atmosphere, the sintering promoter present along the grain boundaries gets etched, becoming a source of loosened grains and particles. More preferably the amount of sintering promoter added is 1 wt. % or less. If less than 1 wt. % sintering promoter will no longer be present even at the grain boundary triple points, which improves the corrosion resistance.
  • oxides oxides, nitrides, fluorides, and stearic oxide compounds may be employed.
  • oxides being inexpensive and readily obtainable, are preferable.
  • stearic oxide compounds are especially suitable since they have a high affinity for organic solvents, and if the aluminum nitride raw-material powder, sintering promoter, etc. are to be mixed together in an organic solvent, the fact that the sintering promoter is a stearic oxide compound will heighten the miscibility.
  • the aluminum nitride raw-material powder, sintering promoter as a powder, a predetermined volume of solvent, a binder, and further, a dispersing agent or a coalescing agent added as needed, are mixed together.
  • Possible mixing techniques include ball-mill mixing and mixing by ultrasound. Mixing can thus produce a raw material slurry.
  • the obtained slurry can be molded, and by sintering the molded product, an aluminum nitride sinter can be produced.
  • Co-firing and post-metallization are two possible methods as a way of doing this.
  • Granules are prepared from the slurry by means of a technique such as spray-drying.
  • the granules are inserted into a predetermined mold and subject to press-molding.
  • the pressing pressure therein desirably is 0.1 t/cm 2 or more. With pressure less than 0.1 t/cm 2 , in most cases sufficient strength in the molded mass cannot be produced, making it liable to break in handling.
  • the density of the molded mass will differ depending on the amount of binder contained and on the amount of sintering promoter added, preferably it is 1.5 g/cm 3 or more. Densities less than 1.5 g/cm 3 would mean a relatively large distance between particles in the raw-material powder, which would hinder the progress of the sintering. At the same time, the molded mass density preferably is 2.5 g/cm 3 or less. Densities of more than 2.5 g/cm 3 would make it difficult to eliminate sufficiently the binder from within the molded mass in a degreasing process of a subsequent step. It would consequently prove difficult to produce an ultrafine sinter as described earlier.
  • heating and degreasing processes are carried out on the molded mass within a non-oxidizing atmosphere.
  • Carrying out the degreasing process under an oxidizing atmosphere such as air would degrade the thermal conductivity of the sinter, because the AlN powder would become superficially oxidized.
  • Preferable non-oxidizing ambient gases are nitrogen and argon.
  • the heating temperature in the degreasing process is preferably 500° C. or more and 1000° C. or less. With temperatures of less than 500° C., surplus carbon is left remaining within the laminate following the degreasing process because the binder cannot sufficiently be eliminated, which interferes with sintering in the subsequent sintering step.
  • the amount of carbon left remaining within the molded mass after the degreasing process is preferably 1.0 wt. % or less. If carbon in excess of 1.0 wt. % remains, it will interfere with the sintering, which would mean that ultrafine sinters could not be produced.
  • sintering is carried out.
  • the sintering is carried out within a non-oxidizing nitrogen, argon, or like atmosphere, at a temperature of 1700 to 2000° C.
  • the moisture contained in the ambient gas such as nitrogen that is employed is preferably ⁇ 30° C. or less given in dew point. If it were to contain more moisture than this, the thermal conductivity of the sinter would likely be degraded, because the AlN would react with the moisture within the ambient gas during sintering and form nitrides.
  • Another preferable condition is that the volume of oxygen within the ambient gas be 0.001 vol. % or less. A larger volume of oxygen would lead to a likelihood that the AlN would oxidize, impairing the sinter thermal conductivity.
  • the jig employed is suitably a boron nitride (BN) molded part.
  • BN boron nitride
  • the obtained sinter is subjected to processing according to requirements.
  • the surface roughness is preferably 5 ⁇ m or less in Ra. If over 5 ⁇ m, in screen printing to form circuits, defects such as blotting or pinholes in the pattern are liable to arise. More suitable is a surface roughness of 1 ⁇ m or less in Ra.
  • the thickness uniformity (parallelism) between the processed faces is preferably 0.5 mm or less. Thickness uniformity exceeding 0.5 mm can lead to large fluctuations in the thickness of the conductive paste during screen printing. Particularly suitable is a thickness uniformity of 0.1 mm or less. Another preferable condition is that the planarity of the screen-printing face be 0.5 mm or less. If the planarity exceeds 0.5 mm, in that case too there can be large fluctuations in the thickness of the conductive paste during screen printing. Particularly suitable is a planarity of 0.1 mm or less.
  • the conductive paste can be obtained by mixing together with a metal powder an oxide powder, a binder, and a solvent according to requirements.
  • the metal powder is preferably tungsten (W), molybdenum (Mo) or tantalum (Ta), since their thermal expansion coefficients match those of ceramics.
  • the oxide powder preferably is an oxide of Group IIa or Group IIIa elements, or is Al 2 O 3 , SiO 2 , or a like oxide.
  • Yttrium oxide is especially preferable because it has very good wettability with AlN.
  • the amount of such oxides added is preferably 0.1 to 30 wt. %. If the amount is less than 0.1 wt. %, the bonding strength between AlN and the metal layer being the circuit that has been formed deteriorates.
  • the metal powder may also have as its main constituent one or more selected from silver, vanadium and platinum.
  • Ag system metals such as Ag—Pd or Ag—Pt are, to be specific, preferable.
  • the electrical resistance can be controlled by adjusting the content of the vanadium (Pd) or platinum (Pt).
  • Oxide powder can also be added, likewise as the case with the tungsten, etc. In this case, the amount added of such oxides is preferably 1 wt. % or more, 30 wt. % or less.
  • a predetermined circuit pattern is fashioned by screen printing a paste prepared by mixing the metal powders together and adding a binder and a solvent.
  • the thickness of the conductive paste is preferably 5 ⁇ m or more and 100 ⁇ m or less in terms of it post-drying thickness. If the thickness were less than 5 ⁇ m the electrical resistance would be too high and the bonding strength decline. Likewise, if in excess of 100 ⁇ m the bonding strength would deteriorate in that case too.
  • the pattern spacing be 0.1 mm or more. With a spacing of less than 0.1 mm, shorting will occur when current flows in the resistive heating element and, depending on the applied voltage and the temperature, leakage current is generated. Particularly in cases where the circuit is employed at temperatures of 500° C. or more, the pattern spacing preferably should be 1 mm or more; more preferable still is that it be 3 mm or more.
  • baking follows. Degreasing is carried out within a non-oxidizing nitrogen, argon, or like atmosphere.
  • the degreasing temperature is preferably 500° C. or more. At less than 500° C., elimination of the binder from the conductive paste is inadequate, leaving behind carbon in the metal layer that during baking will form carbides with the metal and consequently raise the electrical resistance of the metal layer.
  • the baking is suitably done within a non-oxidizing nitrogen, argon, or like atmosphere at, in the case of W, Mo or Ta, a temperature of 1500° C. or more. At temperatures of less than 1500° C., the post-baking electrical resistance of the metal layer turns out too high because the baking of the metal powder within the paste does not proceed to the grain growth stage.
  • a further baking parameter is that the baking temperature should not surpass the firing temperature of the ceramic produced. If the conductive paste is baked at a temperature beyond the firing temperature of the ceramic, dispersive volatilization of the sintering promoter incorporated within the ceramic sets in, and moreover, grain growth in the metal powder within the conductive paste is accelerated, impairing the bonding strength between the ceramic and the metal layer.
  • the baking temperature is preferably 700° C. to 1000° C.
  • the baking atmosphere can be carried out in air or in nitrogen. In this case the foregoing degreasing process can be omitted.
  • the porosity of the electrical circuitry is decreased; it becomes greater if the baking is done at a lower temperature.
  • the porosity can also be adjusted depending on the amount of the binder and solvent added. Irrespective of the way in which the porosity is adjusted, effects according to the present invention are not influenced.
  • an insulative coating can be formed on the metal layer.
  • the insulative coating substance is the same substance as the ceramic on which the metal layer is formed. Problems such as post-sintering warpage arising from the difference in thermal expansion coefficient will occur if the ceramic and insulative coating substances differ significantly.
  • the ceramic is AlN
  • a predetermined amount of an oxide/carbide of a Group IIa element or a Group IIIa element can be added to and mixed together with AlN powder, a binder and a solvent added and the mixture rendered into a paste, and the paste can be screen-printed to spread it onto the metal layer.
  • the amount of sintering promoter added preferably is 0.01 wt. % or more. With an amount less than 0.01 wt. % the insulative coating does not densify, making it difficult to secure electrical isolation of the metal layer. It is further preferable that the amount of sintering promoter not exceed 20 wt. %. Surpassing 30 wt. % leads to excess sintering promoter invading the metal layer, which can end up altering the metal-layer electrical resistance.
  • the spreading thickness preferably is 5 ⁇ m or more. This is because securing electrical isolation proves to be problematic at less than 5 ⁇ m.
  • the ceramic as substrates can be laminated according to requirements. Lamination may be done via an adhesive agent.
  • the adhesive agent being a compound of Group IIa or Group IIIa elements, and a binder and solvent, added to an aluminum oxide powder or aluminum nitride powder and made into a paste—is spread onto the bonding surface by a technique such as screen printing.
  • the thickness of the applied adhesive agent is not particularly restricted, but preferably is 5 ⁇ m or more. Bonding defects such as pin-holes and bonding irregularities are liable to arise in the adhesive layer with thicknesses of less than 5 ⁇ m.
  • the ceramic substrates onto which the adhesive agent has been spread are degreased within a non-oxidizing atmosphere at a temperature of 500° C. or more.
  • the ceramic substrates are thereafter bonded to one another by stacking the ceramic substrates together, applying a predetermined load to the stack, and heating it within a non-oxidizing atmosphere.
  • the load preferably is 0.05 kg/cm 2 or more. With loads of less than 0.05 kg/cm 2 sufficient adhesive strength will not be obtained, and otherwise defects in the joint will likely occur.
  • the heating temperature for bonding is not particularly restricted as long as it is a temperature at which the ceramic substrates adequately bond to one another via the adhesive layers, preferably it is 1500° C. or more. At less than 1500° C. adequate adhesive strength proves difficult to gain, such that defects in the bond are liable to arise. Nitrogen or argon is preferably employed for the non-oxidizing atmosphere during the degreasing and boding just discussed.
  • a ceramic laminated sinter that serves as a wafer holder thus can be produced as in the foregoing.
  • the electrical circuits it should be understood that if they are heater circuits for example, then a molybdenum coil can be utilized, and in the electrostatic-chuck electrode and RF electrode cases, molybdenum or tungsten mesh can be, without employing conductive paste.
  • the molybdenum coil or the mesh can be built into the AlN raw-material powder, and the wafer holder can be fabricated by hot pressing. While the temperature and atmosphere in the hot press may be on par with the AlN sintering temperature and atmosphere, the hot press desirably applies a pressure of 10 kg/cm 2 or more. With pressure of less than 10 kg/cm 2 , the wafer holder might not exhibit its capabilities, because gaps arise between the AlN and the molybdenum coil or the mesh.
  • the earlier-described raw-material slurry is molded into a sheet by doctor blading.
  • the sheet-molding parameters are not particularly limited, but the post-drying thickness of the sheet advisably is 3 mm or less. The sheet thickness surpassing 3 mm leads to large shrinkage in the drying slurry, raising the probability that fissures will be generated in the sheet.
  • a metal layer of predetermined form that serves as an electrical circuit is formed onto the abovementioned sheet using a technique such as screen printing to spread onto it a conductive paste.
  • the conductive paste utilized can be the same as that which was descried under the post-metallization method. Nevertheless, not adding an oxide powder to the conductive paste does not hinder the cofiring method.
  • sheets that have undergone circuit formation are laminated with sheets that have not.
  • Lamination is by setting the sheets each into position to stack them together. Therein, according to requirements, a solvent is spread on between sheets.
  • the sheets are heated as may be necessary. In cases where the stack is heated, the heating temperature is preferably 150° C. or less. Heating to temperatures in excess of this greatly deforms the laminated sheets.
  • Pressure is then applied to the stacked-together sheets to unitize them. The applied pressure is preferably within a range of from 1 to 100 MPa. At pressures less than 1 MPa, the sheets are not adequately unitized and can peel apart during subsequent processes. Likewise, if pressure in excess of 100 MPa is applied, the extent to which the sheets deform becomes too great.
  • This laminate undergoes a degreasing process as well as sintering, in the same way was with the post-metallization method described earlier. Parameters such as the temperature in degreasing and sintering and the amount of carbon are the same as with post-metallization.
  • a wafer holder having a plurality of electrical circuits can be readily fabricated by printing heater circuits, electrostatic-chuck electrodes, etc. respectively onto a plurality of sheets and laminating them. In this way a ceramic laminated sinter that serves as a wafer holder can be produced.
  • the obtained ceramic laminated sinter is subject to processing according to requirements. Routinely with semi-conductor manufacturing devices, in the sintered state the ceramic laminated sinter often cannot be gotten into the precision demanded.
  • the planarity of the wafer-carrying surface as an example of processing precision is preferably 0.5 mm or less; moreover 0.1 mm or less is particularly preferable. The planarity surpassing 0.5 mm is apt to give rise to gaps between the wafer and the wafer holder, keeping the heat of the wafer holder from being uniformly transmitted to the wafer and making likely the generation of temperature irregularities in the wafer.
  • a further preferable condition is that the surface roughness of the wafer-carrying surface be 5 ⁇ m in Ra. If the roughness is over 5 ⁇ m in Ra, grains loosened from the AlN due to friction between the wafer holder and the wafer can grow numerous. Particles loosened in that case become contaminants that have a negative effect on processes, such as film deposition and etching, on the wafer. Furthermore, then, a surface roughness of 1 ⁇ m or less in Ra is ideal.
  • a wafer holder base part can thus be fabricated as in the foregoing. Furthermore, a shaft is attached to the wafer holder.
  • the shaft substance is not particularly limited as long as its thermal expansion coefficient is not appreciably different from that of the wafer-holder ceramic, the difference in thermal expansion coefficient between the shaft substance and the wafer holder preferably is 5 ⁇ 10 ⁇ 6 K or less.
  • the shaft substance is optimally AlN; but silicon nitride, silicon carbide, or mullite can be used.
  • the adhesive layer constituents preferably are composed of AlN and Al 2 O 3 , as well as rare-earth oxides. These constituents are preferable because of their favorable wettability with ceramics such as the AlN that is the substance of the wafer holder and the shaft, which makes the joint strength relatively high, and readily produces a gastight joint surface.
  • the planarity of the respective joining faces of the shaft and wafer holder to be joined preferably is 0.5 mm or less. Planarity greater than this makes gaps liable to occur in the joining faces, impeding the production of a joint having adequate gastightness. A planarity of 0.1 mm or less is more suitable.
  • a planarity of the wafer holder joining faces of 0.02 mm or less is a planarity of the wafer holder joining faces of 0.02 mm or less.
  • the surface of the respective joining faces preferably is 5 ⁇ m or less in Ra. Surface roughness exceeding this would then also mean that gaps are liable to occur in the joining faces. A surface roughness of 1 ⁇ m or less in Ra is still more suitable.
  • electrodes are attached to the wafer holder.
  • the attaching can be done according to publicly known techniques.
  • the side of the wafer holder opposite its wafer-retaining face may be spot faced through to the electrical circuits, and metallization carried out on the circuit, or without metallizing, electrodes of molybdenum, tungsten, etc. may be connected to it directly using an active metal brazing material.
  • the electrodes can thereafter be plated as needed to improve their resistance to oxidation. In this way, a wafer holder for semiconductor manufacturing devices can be fabricated.
  • semiconductor wafers can be processed on a wafer holder according to the present invention, assembled into a semiconductor manufacturing device. Inasmuch as incidence of warping and cracking when heating is kept under control, manufacturing conditions are stabilized, making better-throughput processing of semiconductor wafers possible. Keeping warping and cracking under control makes it possible to gain stabilized characteristics in terms of the films formed and the heating processes.
  • a slurry was prepared by mixing 99 parts by weight aluminum nitride powder and 1 part by weight Y 2 O 3 powder, and blending into the mixture 10 parts by weight polyvinyl butyral as a binder and 5 parts by weight dibutyl phthalate as a solvent.
  • an aluminum nitride powder having a mean particle diameter of 0.6 ⁇ m and a specific surface area of 3.4 m 2 /g was utilized.
  • the slurry was rendered into granules using a spray dryer; and the granules were inserted into a mold and molded, degreased at 850° C., and then sintered at 1900° C.
  • the atmosphere when degreasing and sintering was made a nitrogen atmosphere.
  • the top and bottom sides as well as the perimeter of the sinters were processed to produce 345 mm outer diameter, 5 mm thickness AlN sinters.
  • a tungsten paste was prepared by adding ethyl cellulose as a binder and butyl CarbitolTM as a solvent to, and mixing together with: 98.8 weight % of a tungsten powder whose mean particle diameter was 2.0 ⁇ m, 0.6 weight % Y 2 O 3 , and 0.6 weight % Al 2 O 3 .
  • a pot mill and a triple-roller mill were used for mixing.
  • This tungsten paste was formed into a pattern for a heater circuit by screen-printing the paste onto the AlN sinters.
  • Electrical circuits of differing porosity were prepared by degreasing at 800° C. under a nitrogen atmosphere the AlN sinters printed with the heater circuits, and then baking them at temperatures of from 1800° C. to 1900° C. as set forth in Table I.
  • Wafer holders were prepared by stacking a plurality of layers of AlN sinters not fashioned with electrical circuitry on the AlN sinters on which the heater circuit was formed, and laminating the stack together using a Al2O3-Y 2 O 3 —AlN as a bonding agent.
  • a polishing process was performed on the wafer-retaining face of the wafer holders so that it would be 1 ⁇ m or less in Ra, and on the shaft-joining face so that it would be 5 ⁇ m or less in Ra.
  • the wafer holders were also processed to true their outer diameter.
  • the dimensions of the post-processing wafer holders were 340 mm outside diameter and 16 mm thickness.
  • a shaft made of AlN, 80 mm in outside diameter, 60 mm inside diameter, and 300 mm in length was then mounted onto the face on the side of the wafer holders opposite the wafer-retaining face.
  • the bonding agent was 50% Al 2 O-30% Y 2 O 3 -20% AlN.
  • the heater circuits in the wafer holders were partially exposed by spot-facing through the surface on the side opposite the wafer-retaining face, up to the heater circuit. Electrodes made of molybdenum were connected directly to the exposed portions of the heater circuits utilizing an active metal brazing material. The wafer holders were heated by passing current through the electrodes, and the isothermal ratings and change in the form of the wafer holders were measured.
  • Wafer holders made of AlN, 340 mm outside diameter and 16 mm thickness were prepared in the same manner as in Embodiment 1. Either molybdenum (Mo) paste or tantalum (Ta) paste was utilized, however, for the heater circuits that were the electrical circuitry. The oxides, binder and solvent within the pastes were made likewise as with Embodiment 1. The heater-circuit porosity, the temperature differential at 700° C., and the displacement were measured in the same manner as in Embodiment 1. The results are set forth in Table II. TABLE II Bake Pore Heater-circuit temp. proportion Temp. diff. Displacement No.
  • Wafer holders made of AlN, 340 mm outside diameter and 16 mm thickness were prepared in the same manner as in Embodiment 1.
  • Either 90 weight % Ag-10 weight % Pd (substance A) or 92 weight % Ag-8 weight % Pt (substance B) was utilized, however, for the heater circuits; and the heater-circuit baking temperature was varied from 850° C. to 900° C. as set forth in Table III.
  • the porosity, the temperature differential at 500° C., and the displacement were measured in the same manner as in Embodiment 1. The results are set forth in Table III. TABLE III Bake Pore Heater-circuit temp. proportion Temp. diff. Displacement No.
  • Wafer holders No. 1 and No. 4 of Embodiment 1 were in stalled into film-deposition equipment, wherein tungsten films were deposited onto 12-inch silicon wafers. The result was that while in the case in which wafer holder No. 1 was utilized, fluctuation in the thickness of the tungsten film was a favorable 10% or less, in the case in which No. 4 was utilized, the fluctuation in the thickness of the tungsten film was a poor 20% approximately.
  • an electrical circuit layer consisting of one or more sinter laminae is formed on the face or in the interior of the wafer holder; and by rendering pores present in the circuit layer, the wafer holder can be made so that deformation such as warping and cracking does not occur when the wafer holder is heated. Utilizing a wafer holder of this sort enables the realization of semiconductor manufacturing equipment superior in isothermal rating and stabilized in manufacturing conditions.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Resistance Heating (AREA)
US10/604,514 2003-03-24 2003-07-28 Wafer holder for semiconductor manufacturing device and semiconductor manufacturing device in which it is installed Abandoned US20040188321A1 (en)

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JP2003079324A JP3966201B2 (ja) 2003-03-24 2003-03-24 半導体製造装置用ウェハ保持体およびそれを搭載した半導体製造装置
JPJP-2003-079324 2003-03-24

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Cited By (4)

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CN109427596A (zh) * 2017-09-05 2019-03-05 浙江德汇电子陶瓷有限公司 陶瓷基座及其制作方法
US20210265189A1 (en) * 2018-09-28 2021-08-26 Kyocera Corporation Ceramic structure and wafer system
US20220122815A1 (en) * 2020-10-15 2022-04-21 Oem Group, Llc Systems and methods for unprecedented crystalline quality in physical vapor deposition-based ultra-thin aluminum nitride films
US11328906B2 (en) 2018-07-30 2022-05-10 Toto Ltd. Electrostatic chuck

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EP2515322A4 (en) * 2009-12-18 2017-03-01 Nikon Corporation Pair of substrate holders, method for manufacturing device, separation device, method for separating substrates, substrate holder, and device for positioning substrate
JP6463936B2 (ja) * 2014-10-01 2019-02-06 日本特殊陶業株式会社 半導体製造装置用部品の製造方法
JP6690918B2 (ja) * 2015-10-16 2020-04-28 日本特殊陶業株式会社 加熱部材、静電チャック、及びセラミックヒータ
JP7232404B2 (ja) * 2018-07-30 2023-03-03 Toto株式会社 静電チャック
US11107709B2 (en) 2019-01-30 2021-08-31 Applied Materials, Inc. Temperature-controllable process chambers, electronic device processing systems, and manufacturing methods

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US6620707B1 (en) * 1999-07-13 2003-09-16 Robert Bosch Gmbh Heat conductor, especially for a sensor, and method for producing such a heat conductor
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US6771483B2 (en) * 2000-01-21 2004-08-03 Tocalo Co., Ltd. Electrostatic chuck member and method of producing the same
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109427596A (zh) * 2017-09-05 2019-03-05 浙江德汇电子陶瓷有限公司 陶瓷基座及其制作方法
US11328906B2 (en) 2018-07-30 2022-05-10 Toto Ltd. Electrostatic chuck
US20210265189A1 (en) * 2018-09-28 2021-08-26 Kyocera Corporation Ceramic structure and wafer system
US20220122815A1 (en) * 2020-10-15 2022-04-21 Oem Group, Llc Systems and methods for unprecedented crystalline quality in physical vapor deposition-based ultra-thin aluminum nitride films

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TWI264080B (en) 2006-10-11
US20090142479A1 (en) 2009-06-04
TW200419695A (en) 2004-10-01
JP3966201B2 (ja) 2007-08-29
JP2004288887A (ja) 2004-10-14

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