US20040007248A1 - Method for improving reliability of reaction apparatus - Google Patents
Method for improving reliability of reaction apparatus Download PDFInfo
- Publication number
- US20040007248A1 US20040007248A1 US10/615,899 US61589903A US2004007248A1 US 20040007248 A1 US20040007248 A1 US 20040007248A1 US 61589903 A US61589903 A US 61589903A US 2004007248 A1 US2004007248 A1 US 2004007248A1
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- US
- United States
- Prior art keywords
- hydrogen
- etching
- nitrogen
- plasma including
- deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 54
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 40
- 238000005530 etching Methods 0.000 claims abstract description 36
- 230000008021 deposition Effects 0.000 claims abstract description 28
- 239000001257 hydrogen Substances 0.000 claims abstract description 23
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 23
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 20
- 239000007789 gas Substances 0.000 claims abstract description 17
- 125000001309 chloro group Chemical class Cl* 0.000 claims abstract 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 28
- 229910052786 argon Inorganic materials 0.000 claims description 14
- 210000002381 plasma Anatomy 0.000 abstract 2
- 238000000151 deposition Methods 0.000 description 25
- 150000001804 chlorine Chemical class 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 238000011065 in-situ storage Methods 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 150000001805 chlorine compounds Chemical class 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 235000011194 food seasoning agent Nutrition 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- 229910003074 TiCl4 Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 2
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- 229910004537 TaCl5 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
Definitions
- the present invention relates to a method for manufacturing semiconductor devices, and more particularly, to a method for improving reliability of an etching apparatus and a deposition apparatus using chlorine series etching gas.
- the in-situ cleaning process has a drawback of increasing a process time, but a clean process is possible, so that it is required for a process sensitive to the yield.
- the chlorine may be desorbed from the exposed surface and take part in the reaction, thereby varying etching and depositing properties and thus resulting in the instability of the process.
- the conventional method generally utilizes an etching gas, such as Cl 2 , SF 6 and so forth when performing the in-situ cleaning process.
- the in-situ cleaning process using the etching gas has a drawback of reducing a lifetime of components.
- the present invention is directed to a method for improving reliability of an etching apparatus and a deposition apparatus using chlorine series etching gas that substantially obviates one or more problems due to the limitations and disadvantages of the related art.
- a method for improving reliability of an etching apparatus and a deposition apparatus comprising the steps of: preparing a reaction unit using a chlorine series gas; and generating a plasma including at least one of hydrogen and nitrogen in the reaction unit to remove a residual remaining in a reaction tube of the reaction unit.
- a method for improving reliability of an etching apparatus and a deposition apparatus comprising the steps of: preparing at least one of an etching apparatus and a deposition apparatus, each of the apparatuses using a chlorine series gas; and generating a plasma including at least one of hydrogen and nitrogen in one of the etching apparatus and the deposition apparatus to remove a residual remaining in a reaction tube of the reaction unit.
- FIG. 1 is a graph indicating a surface resistance of a Ti film deposited by PECVD method using TiCl 4 in terms of depositing times, according to an embodiment of the present invention.
- the method of improving reliability of an etching apparatus and a deposition apparatus according to the present invention is adapted to an etching or deposition apparatus in which etching gases containing chlorine, such as Cl 2 , BCl 3 or the like and deposition gases, such as TiCl 4 , TaCl 5 or the like are dissolved by use of plasma to etch a surface of a wafer or to deposit materials on the surface of the wafer.
- etching gases containing chlorine such as Cl 2 , BCl 3 or the like
- deposition gases such as TiCl 4 , TaCl 5 or the like
- reaction tube in stand-by after the processes is treated with hydrogen or nitrogen-based plasma.
- the hydrogen-based plasma serves to remove chloride, in which plasma argon gas may be added to activate the plasma.
- the nitrogen-based plasma serves to replace Cl with nitrogen so as to react with Al, Si, Ti, Ta and the like contained in the chloride compound to form nitrides, which minimizes the effect exerting on the following process.
- the hydrogen-based plasma may preferably contain 5 to 90% of argon.
- the nitrogen-based plasma may preferably contain either 5 to 90% of hydrogen or 5 to 90% of argon, or combination thereof.
- a chloride radical remaining in the reaction tube may be removed by treating the reaction tube with the plasma, and the residual metallic materials may be stabilized.
- the present invention provides an effect of removing chloride due to activation of hydrogen in the plasma and a stabilization of the surface condition of the semiconductor device through the formation of stable nitride using the activated nitrogen.
- etching and deposition apparatuses obtained by the present invention makes the etching or deposition features for the wafers improved in the etching or deposition apparatus in a sheet supply mode. Also, a preventive maintenance (PM) period of the apparatus may be reduced to increase an operating time of the apparatus.
- PM preventive maintenance
- the method of the present invention does not damage the apparatus in comparison with the conventional seasoning method or the conventional in-situ cleaning method using etching gas.
- the method of the present invention is a stable one that does not discharge pollution material, because of only using hydrogen, argon, nitrogen or the like which has no fluidity.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Disclosed is a method for improving the reliability of an etching apparatus and a deposition apparatus. The method comprises the steps of preparing at least one of an etching apparatus and a deposition apparatus, each of the apparatuses using a chlorine series gas, and generating a plasma including at least one of hydrogen and nitrogen in one of the etching apparatus and the deposition apparatus to remove a residual remaining in a reaction unit of the apparatus, whereby a chlorine series residual absorbed on the reaction tube is effectively removed by use of hydrogen and nitrogen-based plasmas thus to stably secure the reliability of the apparatus.
Description
- 1. Field of the Invention
- The present invention relates to a method for manufacturing semiconductor devices, and more particularly, to a method for improving reliability of an etching apparatus and a deposition apparatus using chlorine series etching gas.
- 2. Description of the Related Art
- According to etching or deposition apparatuses for processing wafers by the sheet in a process of manufacturing a semiconductor device, a phenomenon frequently appears in that a reactive by-product, which is generated while performing the process, remains in a reaction tube, thereby adversely affecting the wafer to be processed at a next process.
- In order to reduce the effect of the residual product, two methods have been proposed: i.e., a seasoning process in which a residual product is previously saturated in the reaction tube; and an in-situ cleaning process in which after removing the residual product from the reaction tube, a following process is carried out.
- According to the seasoning process, although the apparatus is stably maintained, there is a drawback in that if a lot of residual product remains in the reaction tube, it is likely that large particles are dropped onto the surface of the wafer, thereby reducing the yield.
- Meanwhile, the in-situ cleaning process has a drawback of increasing a process time, but a clean process is possible, so that it is required for a process sensitive to the yield.
- In particular, in a plasma etching or depositing process using chlorine series etching gas, after the compound containing chlorine is deposited on the exposed surface of the reaction tube, the chlorine may be desorbed from the exposed surface and take part in the reaction, thereby varying etching and depositing properties and thus resulting in the instability of the process.
- The conventional method generally utilizes an etching gas, such as Cl 2, SF6 and so forth when performing the in-situ cleaning process. The in-situ cleaning process using the etching gas has a drawback of reducing a lifetime of components.
- Accordingly, the present invention is directed to a method for improving reliability of an etching apparatus and a deposition apparatus using chlorine series etching gas that substantially obviates one or more problems due to the limitations and disadvantages of the related art.
- It is an object of the present invention to provide a method for improving reliability of an etching apparatus and a deposition apparatus, in which chlorine series residual reaction products deposited on an exposed surface of a reaction tube are effectively removed from the reaction tube by use of a hydrogen-based plasma and a nitrogen-based plasma.
- To achieve this object and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described herein, there is provided a method for improving reliability of an etching apparatus and a deposition apparatus, the method comprising the steps of: preparing a reaction unit using a chlorine series gas; and generating a plasma including at least one of hydrogen and nitrogen in the reaction unit to remove a residual remaining in a reaction tube of the reaction unit.
- According to another aspect of the present invention, there is provided a method for improving reliability of an etching apparatus and a deposition apparatus, the method comprising the steps of: preparing at least one of an etching apparatus and a deposition apparatus, each of the apparatuses using a chlorine series gas; and generating a plasma including at least one of hydrogen and nitrogen in one of the etching apparatus and the deposition apparatus to remove a residual remaining in a reaction tube of the reaction unit.
- Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
- The accompanying drawing, which is included to provide a further understanding of the invention and is incorporated in and constitutes a part of this application, illustrates embodiment(s) of the invention and together with the description serves to explain the principle of the invention. In the drawing:
- FIG. 1 is a graph indicating a surface resistance of a Ti film deposited by PECVD method using TiCl 4 in terms of depositing times, according to an embodiment of the present invention.
- Reference will now be made in detail to the preferred embodiment of the present invention, an example of which is illustrated in the accompanying drawing.
- The method of improving reliability of an etching apparatus and a deposition apparatus according to the present invention is adapted to an etching or deposition apparatus in which etching gases containing chlorine, such as Cl 2, BCl3 or the like and deposition gases, such as TiCl4, TaCl5 or the like are dissolved by use of plasma to etch a surface of a wafer or to deposit materials on the surface of the wafer.
- In order to remove the compound containing chlorine remaining in a reaction tube of the apparatus after the respective etching and depositing processes, the reaction tube in stand-by after the processes is treated with hydrogen or nitrogen-based plasma.
- At this time, the hydrogen-based plasma serves to remove chloride, in which plasma argon gas may be added to activate the plasma. In addition, the nitrogen-based plasma serves to replace Cl with nitrogen so as to react with Al, Si, Ti, Ta and the like contained in the chloride compound to form nitrides, which minimizes the effect exerting on the following process.
- The above processes may be applied in sequence as the following.
- In a first process, after the hydrogen-based plasma (containing argon, if necessary) is generated in the etching or deposition apparatus using chloride series gas, the following etching or deposition is performed.
- In a second process, after the nitrogen-based plasma (containing hydrogen and argon, if necessary) is generated in the etching or deposition apparatus using chloride series gas, the following etching or deposition is performed.
- Finally, in a third process, after the hydrogen-based plasma (containing argon, if necessary) and the nitrogen-based plasma (containing hydrogen and argon, if necessary) are generated one after another in the etching or deposition apparatus using chloride series gas, the following etching or deposition is performed.
- In the above processes, the hydrogen-based plasma may preferably contain 5 to 90% of argon. Also, the nitrogen-based plasma may preferably contain either 5 to 90% of hydrogen or 5 to 90% of argon, or combination thereof.
- As described above, with the method of improving the reliability of the etching and deposition apparatuses according to the present invention, a chloride radical remaining in the reaction tube may be removed by treating the reaction tube with the plasma, and the residual metallic materials may be stabilized.
- In addition, the present invention provides an effect of removing chloride due to activation of hydrogen in the plasma and a stabilization of the surface condition of the semiconductor device through the formation of stable nitride using the activated nitrogen.
- Further, maintaining the reliability of the etching and deposition apparatuses obtained by the present invention makes the etching or deposition features for the wafers improved in the etching or deposition apparatus in a sheet supply mode. Also, a preventive maintenance (PM) period of the apparatus may be reduced to increase an operating time of the apparatus.
- Furthermore, the method of the present invention does not damage the apparatus in comparison with the conventional seasoning method or the conventional in-situ cleaning method using etching gas.
- In addition, the method of the present invention is a stable one that does not discharge pollution material, because of only using hydrogen, argon, nitrogen or the like which has no fluidity.
- The forgoing embodiment is merely exemplary and is not to be construed as limiting the present invention. The present teachings can be readily applied to other types of apparatuses. The description of the present invention is intended to be illustrative, and not to limit the scope of the claims. Many alternatives, modifications, and variations will be apparent to those skilled in the art.
Claims (10)
1. A method for improving reliability of an etching apparatus and a deposition apparatuses, the method comprising the steps of:
preparing a reaction unit using chlorine series gas; and
generating a plasma including at least one of hydrogen and nitrogen in the reaction unit to remove a residual remaining in a reaction tube of the reaction unit.
2. The method as claimed in claim 1 , wherein the plasma including hydrogen comprises argon of 5 to 90%.
3. The method as claimed in claim 1 , wherein the plasma including nitrogen comprises hydrogen of 5 to 50%.
4. The method as claimed in claim 1 , wherein the plasma including nitrogen comprises argon of 5 to 90%.
5. The method as claimed in claim 1 , wherein the plasma including nitrogen comprises hydrogen of 5 to 50% and argon of 5 to 90%.
6. A method for improving reliability of an etching apparatus and a deposition apparatus, the method comprising the steps of:
preparing at least one of an etching apparatus and a deposition apparatus, each of the apparatuses using a chlorine series gas; and
generating a plasma including at least one of hydrogen and nitrogen in one of the etching apparatus and the deposition apparatus to remove a residual remaining in a reaction tube of the apparatus.
7. The method as claimed in claim 6 , wherein the plasma including hydrogen comprises argon of 5 to 90%.
8. The method as claimed in claim 6 , wherein the plasma including nitrogen comprises hydrogen of 5 to 50%.
9. The method as claimed in claim 6 , wherein the plasma including nitrogen comprises argon of 5 to 90%.
10. The method as claimed in claim 6 , wherein the plasma including nitrogen comprises hydrogen of 5 to 50% and argon of 5 to 90%.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2002-40773 | 2002-07-12 | ||
| KR1020020040773A KR20040006481A (en) | 2002-07-12 | 2002-07-12 | Method for improving reliablity of etching and depositing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20040007248A1 true US20040007248A1 (en) | 2004-01-15 |
Family
ID=30113157
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/615,899 Abandoned US20040007248A1 (en) | 2002-07-12 | 2003-07-09 | Method for improving reliability of reaction apparatus |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20040007248A1 (en) |
| JP (1) | JP2004036002A (en) |
| KR (1) | KR20040006481A (en) |
| TW (1) | TWI319896B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2913845A1 (en) * | 2014-02-27 | 2015-09-02 | Tokyo Electron Limited | Cleaning method for plasma processing apparatus |
| CN111684568A (en) * | 2018-02-08 | 2020-09-18 | 周星工程股份有限公司 | Apparatus and method for cleaning chamber |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG10201607880PA (en) | 2015-09-25 | 2017-04-27 | Tokyo Electron Ltd | METHOD FOR FORMING TiON FILM |
| JP6775322B2 (en) * | 2015-09-25 | 2020-10-28 | 東京エレクトロン株式会社 | Method of forming a TiON film |
| JP7175209B2 (en) * | 2019-02-01 | 2022-11-18 | 東京エレクトロン株式会社 | Deposition method |
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|---|---|---|---|---|
| US5200031A (en) * | 1991-08-26 | 1993-04-06 | Applied Materials, Inc. | Method for removal of photoresist over metal which also removes or inactivates corrosion-forming materials remaining from one or more previous metal etch steps |
| US5326723A (en) * | 1992-09-09 | 1994-07-05 | Intel Corporation | Method for improving stability of tungsten chemical vapor deposition |
| US5367139A (en) * | 1989-10-23 | 1994-11-22 | International Business Machines Corporation | Methods and apparatus for contamination control in plasma processing |
| US5532447A (en) * | 1993-12-06 | 1996-07-02 | Aluminum Company Of America | Method of cleaning an aluminum surface by plasma treatment |
| US6068729A (en) * | 1997-03-03 | 2000-05-30 | Applied Materials, Inc. | Two step process for cleaning a substrate processing chamber |
| US6368517B1 (en) * | 1999-02-17 | 2002-04-09 | Applied Materials, Inc. | Method for preventing corrosion of a dielectric material |
| US6401728B2 (en) * | 1999-03-01 | 2002-06-11 | United Microelectronics Corp. | Method for cleaning interior of etching chamber |
| US6524963B1 (en) * | 1999-10-20 | 2003-02-25 | Chartered Semiconductor Manufacturing Ltd. | Method to improve etching of organic-based, low dielectric constant materials |
| US6626188B2 (en) * | 2001-06-28 | 2003-09-30 | International Business Machines Corporation | Method for cleaning and preconditioning a chemical vapor deposition chamber dome |
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| US20040013818A1 (en) * | 2002-07-19 | 2004-01-22 | Moon Kwang-Jin | Method of cleaning a chemical vapor deposition chamber |
| US6843858B2 (en) * | 2002-04-02 | 2005-01-18 | Applied Materials, Inc. | Method of cleaning a semiconductor processing chamber |
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|---|---|---|---|---|
| JPS59158525A (en) * | 1983-02-28 | 1984-09-08 | Mitsubishi Electric Corp | Method for forming aluminum alloy film pattern |
| JP2674488B2 (en) * | 1993-12-01 | 1997-11-12 | 日本電気株式会社 | Dry etching chamber cleaning method |
| JP2803556B2 (en) * | 1994-02-03 | 1998-09-24 | 日本電気株式会社 | Method of forming barrier metal layer |
| JP3413276B2 (en) * | 1994-04-20 | 2003-06-03 | 東京エレクトロン株式会社 | Thin film formation method |
| JP3851686B2 (en) * | 1996-06-08 | 2006-11-29 | キヤノンアネルバ株式会社 | Thin film formation method by plasma CVD |
| KR19990055203A (en) * | 1997-12-27 | 1999-07-15 | 김영환 | Metal wiring formation method of semiconductor device |
| KR20030061878A (en) * | 2002-01-12 | 2003-07-23 | 삼성전자주식회사 | Method of forming metal interconnection in semiconductor device |
-
2002
- 2002-07-12 KR KR1020020040773A patent/KR20040006481A/en not_active Application Discontinuation
-
2003
- 2003-07-04 TW TW092118318A patent/TWI319896B/en not_active IP Right Cessation
- 2003-07-04 JP JP2003271154A patent/JP2004036002A/en active Pending
- 2003-07-09 US US10/615,899 patent/US20040007248A1/en not_active Abandoned
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5367139A (en) * | 1989-10-23 | 1994-11-22 | International Business Machines Corporation | Methods and apparatus for contamination control in plasma processing |
| US5200031A (en) * | 1991-08-26 | 1993-04-06 | Applied Materials, Inc. | Method for removal of photoresist over metal which also removes or inactivates corrosion-forming materials remaining from one or more previous metal etch steps |
| US5326723A (en) * | 1992-09-09 | 1994-07-05 | Intel Corporation | Method for improving stability of tungsten chemical vapor deposition |
| US5532447A (en) * | 1993-12-06 | 1996-07-02 | Aluminum Company Of America | Method of cleaning an aluminum surface by plasma treatment |
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| US6368517B1 (en) * | 1999-02-17 | 2002-04-09 | Applied Materials, Inc. | Method for preventing corrosion of a dielectric material |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2913845A1 (en) * | 2014-02-27 | 2015-09-02 | Tokyo Electron Limited | Cleaning method for plasma processing apparatus |
| CN111684568A (en) * | 2018-02-08 | 2020-09-18 | 周星工程股份有限公司 | Apparatus and method for cleaning chamber |
| US11427906B2 (en) * | 2018-02-08 | 2022-08-30 | Jusung Engineering Co., Ltd. | Chamber cleaning device and chamber cleaning method |
| US12065734B2 (en) | 2018-02-08 | 2024-08-20 | Jusung Engineering Co., Ltd. | Chamber cleaning device and chamber cleaning method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004036002A (en) | 2004-02-05 |
| KR20040006481A (en) | 2004-01-24 |
| TW200401352A (en) | 2004-01-16 |
| TWI319896B (en) | 2010-01-21 |
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