US20040007248A1 - Method for improving reliability of reaction apparatus - Google Patents

Method for improving reliability of reaction apparatus Download PDF

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Publication number
US20040007248A1
US20040007248A1 US10/615,899 US61589903A US2004007248A1 US 20040007248 A1 US20040007248 A1 US 20040007248A1 US 61589903 A US61589903 A US 61589903A US 2004007248 A1 US2004007248 A1 US 2004007248A1
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Prior art keywords
hydrogen
etching
nitrogen
plasma including
deposition
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Abandoned
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US10/615,899
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Seong Soo Jang
Dong Goo Choi
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SK Hynix Inc
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Hynix Semiconductor Inc
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Assigned to HYNIX SEMICONDUCTOR INC. reassignment HYNIX SEMICONDUCTOR INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHOI, DONG GOO, JANG, SEONG SOO
Publication of US20040007248A1 publication Critical patent/US20040007248A1/en
Abandoned legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405Cleaning of reactor or parts inside the reactor by using reactive gases

Definitions

  • the present invention relates to a method for manufacturing semiconductor devices, and more particularly, to a method for improving reliability of an etching apparatus and a deposition apparatus using chlorine series etching gas.
  • the in-situ cleaning process has a drawback of increasing a process time, but a clean process is possible, so that it is required for a process sensitive to the yield.
  • the chlorine may be desorbed from the exposed surface and take part in the reaction, thereby varying etching and depositing properties and thus resulting in the instability of the process.
  • the conventional method generally utilizes an etching gas, such as Cl 2 , SF 6 and so forth when performing the in-situ cleaning process.
  • the in-situ cleaning process using the etching gas has a drawback of reducing a lifetime of components.
  • the present invention is directed to a method for improving reliability of an etching apparatus and a deposition apparatus using chlorine series etching gas that substantially obviates one or more problems due to the limitations and disadvantages of the related art.
  • a method for improving reliability of an etching apparatus and a deposition apparatus comprising the steps of: preparing a reaction unit using a chlorine series gas; and generating a plasma including at least one of hydrogen and nitrogen in the reaction unit to remove a residual remaining in a reaction tube of the reaction unit.
  • a method for improving reliability of an etching apparatus and a deposition apparatus comprising the steps of: preparing at least one of an etching apparatus and a deposition apparatus, each of the apparatuses using a chlorine series gas; and generating a plasma including at least one of hydrogen and nitrogen in one of the etching apparatus and the deposition apparatus to remove a residual remaining in a reaction tube of the reaction unit.
  • FIG. 1 is a graph indicating a surface resistance of a Ti film deposited by PECVD method using TiCl 4 in terms of depositing times, according to an embodiment of the present invention.
  • the method of improving reliability of an etching apparatus and a deposition apparatus according to the present invention is adapted to an etching or deposition apparatus in which etching gases containing chlorine, such as Cl 2 , BCl 3 or the like and deposition gases, such as TiCl 4 , TaCl 5 or the like are dissolved by use of plasma to etch a surface of a wafer or to deposit materials on the surface of the wafer.
  • etching gases containing chlorine such as Cl 2 , BCl 3 or the like
  • deposition gases such as TiCl 4 , TaCl 5 or the like
  • reaction tube in stand-by after the processes is treated with hydrogen or nitrogen-based plasma.
  • the hydrogen-based plasma serves to remove chloride, in which plasma argon gas may be added to activate the plasma.
  • the nitrogen-based plasma serves to replace Cl with nitrogen so as to react with Al, Si, Ti, Ta and the like contained in the chloride compound to form nitrides, which minimizes the effect exerting on the following process.
  • the hydrogen-based plasma may preferably contain 5 to 90% of argon.
  • the nitrogen-based plasma may preferably contain either 5 to 90% of hydrogen or 5 to 90% of argon, or combination thereof.
  • a chloride radical remaining in the reaction tube may be removed by treating the reaction tube with the plasma, and the residual metallic materials may be stabilized.
  • the present invention provides an effect of removing chloride due to activation of hydrogen in the plasma and a stabilization of the surface condition of the semiconductor device through the formation of stable nitride using the activated nitrogen.
  • etching and deposition apparatuses obtained by the present invention makes the etching or deposition features for the wafers improved in the etching or deposition apparatus in a sheet supply mode. Also, a preventive maintenance (PM) period of the apparatus may be reduced to increase an operating time of the apparatus.
  • PM preventive maintenance
  • the method of the present invention does not damage the apparatus in comparison with the conventional seasoning method or the conventional in-situ cleaning method using etching gas.
  • the method of the present invention is a stable one that does not discharge pollution material, because of only using hydrogen, argon, nitrogen or the like which has no fluidity.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Disclosed is a method for improving the reliability of an etching apparatus and a deposition apparatus. The method comprises the steps of preparing at least one of an etching apparatus and a deposition apparatus, each of the apparatuses using a chlorine series gas, and generating a plasma including at least one of hydrogen and nitrogen in one of the etching apparatus and the deposition apparatus to remove a residual remaining in a reaction unit of the apparatus, whereby a chlorine series residual absorbed on the reaction tube is effectively removed by use of hydrogen and nitrogen-based plasmas thus to stably secure the reliability of the apparatus.

Description

    BACKGROUND OF THE INVENTION
  • 1. Field of the Invention [0001]
  • The present invention relates to a method for manufacturing semiconductor devices, and more particularly, to a method for improving reliability of an etching apparatus and a deposition apparatus using chlorine series etching gas. [0002]
  • 2. Description of the Related Art [0003]
  • According to etching or deposition apparatuses for processing wafers by the sheet in a process of manufacturing a semiconductor device, a phenomenon frequently appears in that a reactive by-product, which is generated while performing the process, remains in a reaction tube, thereby adversely affecting the wafer to be processed at a next process. [0004]
  • In order to reduce the effect of the residual product, two methods have been proposed: i.e., a seasoning process in which a residual product is previously saturated in the reaction tube; and an in-situ cleaning process in which after removing the residual product from the reaction tube, a following process is carried out. [0005]
  • According to the seasoning process, although the apparatus is stably maintained, there is a drawback in that if a lot of residual product remains in the reaction tube, it is likely that large particles are dropped onto the surface of the wafer, thereby reducing the yield. [0006]
  • Meanwhile, the in-situ cleaning process has a drawback of increasing a process time, but a clean process is possible, so that it is required for a process sensitive to the yield. [0007]
  • In particular, in a plasma etching or depositing process using chlorine series etching gas, after the compound containing chlorine is deposited on the exposed surface of the reaction tube, the chlorine may be desorbed from the exposed surface and take part in the reaction, thereby varying etching and depositing properties and thus resulting in the instability of the process. [0008]
  • The conventional method generally utilizes an etching gas, such as Cl[0009] 2, SF6 and so forth when performing the in-situ cleaning process. The in-situ cleaning process using the etching gas has a drawback of reducing a lifetime of components.
  • SUMMARY OF THE INVENTION
  • Accordingly, the present invention is directed to a method for improving reliability of an etching apparatus and a deposition apparatus using chlorine series etching gas that substantially obviates one or more problems due to the limitations and disadvantages of the related art. [0010]
  • It is an object of the present invention to provide a method for improving reliability of an etching apparatus and a deposition apparatus, in which chlorine series residual reaction products deposited on an exposed surface of a reaction tube are effectively removed from the reaction tube by use of a hydrogen-based plasma and a nitrogen-based plasma. [0011]
  • To achieve this object and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described herein, there is provided a method for improving reliability of an etching apparatus and a deposition apparatus, the method comprising the steps of: preparing a reaction unit using a chlorine series gas; and generating a plasma including at least one of hydrogen and nitrogen in the reaction unit to remove a residual remaining in a reaction tube of the reaction unit. [0012]
  • According to another aspect of the present invention, there is provided a method for improving reliability of an etching apparatus and a deposition apparatus, the method comprising the steps of: preparing at least one of an etching apparatus and a deposition apparatus, each of the apparatuses using a chlorine series gas; and generating a plasma including at least one of hydrogen and nitrogen in one of the etching apparatus and the deposition apparatus to remove a residual remaining in a reaction tube of the reaction unit. [0013]
  • Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.[0014]
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • The accompanying drawing, which is included to provide a further understanding of the invention and is incorporated in and constitutes a part of this application, illustrates embodiment(s) of the invention and together with the description serves to explain the principle of the invention. In the drawing: [0015]
  • FIG. 1 is a graph indicating a surface resistance of a Ti film deposited by PECVD method using TiCl[0016] 4 in terms of depositing times, according to an embodiment of the present invention.
  • DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
  • Reference will now be made in detail to the preferred embodiment of the present invention, an example of which is illustrated in the accompanying drawing. [0017]
  • The method of improving reliability of an etching apparatus and a deposition apparatus according to the present invention is adapted to an etching or deposition apparatus in which etching gases containing chlorine, such as Cl[0018] 2, BCl3 or the like and deposition gases, such as TiCl4, TaCl5 or the like are dissolved by use of plasma to etch a surface of a wafer or to deposit materials on the surface of the wafer.
  • In order to remove the compound containing chlorine remaining in a reaction tube of the apparatus after the respective etching and depositing processes, the reaction tube in stand-by after the processes is treated with hydrogen or nitrogen-based plasma. [0019]
  • At this time, the hydrogen-based plasma serves to remove chloride, in which plasma argon gas may be added to activate the plasma. In addition, the nitrogen-based plasma serves to replace Cl with nitrogen so as to react with Al, Si, Ti, Ta and the like contained in the chloride compound to form nitrides, which minimizes the effect exerting on the following process. [0020]
  • The above processes may be applied in sequence as the following. [0021]
  • In a first process, after the hydrogen-based plasma (containing argon, if necessary) is generated in the etching or deposition apparatus using chloride series gas, the following etching or deposition is performed. [0022]
  • In a second process, after the nitrogen-based plasma (containing hydrogen and argon, if necessary) is generated in the etching or deposition apparatus using chloride series gas, the following etching or deposition is performed. [0023]
  • Finally, in a third process, after the hydrogen-based plasma (containing argon, if necessary) and the nitrogen-based plasma (containing hydrogen and argon, if necessary) are generated one after another in the etching or deposition apparatus using chloride series gas, the following etching or deposition is performed. [0024]
  • In the above processes, the hydrogen-based plasma may preferably contain 5 to 90% of argon. Also, the nitrogen-based plasma may preferably contain either 5 to 90% of hydrogen or 5 to 90% of argon, or combination thereof. [0025]
  • As described above, with the method of improving the reliability of the etching and deposition apparatuses according to the present invention, a chloride radical remaining in the reaction tube may be removed by treating the reaction tube with the plasma, and the residual metallic materials may be stabilized. [0026]
  • In addition, the present invention provides an effect of removing chloride due to activation of hydrogen in the plasma and a stabilization of the surface condition of the semiconductor device through the formation of stable nitride using the activated nitrogen. [0027]
  • Further, maintaining the reliability of the etching and deposition apparatuses obtained by the present invention makes the etching or deposition features for the wafers improved in the etching or deposition apparatus in a sheet supply mode. Also, a preventive maintenance (PM) period of the apparatus may be reduced to increase an operating time of the apparatus. [0028]
  • Furthermore, the method of the present invention does not damage the apparatus in comparison with the conventional seasoning method or the conventional in-situ cleaning method using etching gas. [0029]
  • In addition, the method of the present invention is a stable one that does not discharge pollution material, because of only using hydrogen, argon, nitrogen or the like which has no fluidity. [0030]
  • The forgoing embodiment is merely exemplary and is not to be construed as limiting the present invention. The present teachings can be readily applied to other types of apparatuses. The description of the present invention is intended to be illustrative, and not to limit the scope of the claims. Many alternatives, modifications, and variations will be apparent to those skilled in the art. [0031]

Claims (10)

What is claimed is:
1. A method for improving reliability of an etching apparatus and a deposition apparatuses, the method comprising the steps of:
preparing a reaction unit using chlorine series gas; and
generating a plasma including at least one of hydrogen and nitrogen in the reaction unit to remove a residual remaining in a reaction tube of the reaction unit.
2. The method as claimed in claim 1, wherein the plasma including hydrogen comprises argon of 5 to 90%.
3. The method as claimed in claim 1, wherein the plasma including nitrogen comprises hydrogen of 5 to 50%.
4. The method as claimed in claim 1, wherein the plasma including nitrogen comprises argon of 5 to 90%.
5. The method as claimed in claim 1, wherein the plasma including nitrogen comprises hydrogen of 5 to 50% and argon of 5 to 90%.
6. A method for improving reliability of an etching apparatus and a deposition apparatus, the method comprising the steps of:
preparing at least one of an etching apparatus and a deposition apparatus, each of the apparatuses using a chlorine series gas; and
generating a plasma including at least one of hydrogen and nitrogen in one of the etching apparatus and the deposition apparatus to remove a residual remaining in a reaction tube of the apparatus.
7. The method as claimed in claim 6, wherein the plasma including hydrogen comprises argon of 5 to 90%.
8. The method as claimed in claim 6, wherein the plasma including nitrogen comprises hydrogen of 5 to 50%.
9. The method as claimed in claim 6, wherein the plasma including nitrogen comprises argon of 5 to 90%.
10. The method as claimed in claim 6, wherein the plasma including nitrogen comprises hydrogen of 5 to 50% and argon of 5 to 90%.
US10/615,899 2002-07-12 2003-07-09 Method for improving reliability of reaction apparatus Abandoned US20040007248A1 (en)

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KR2002-40773 2002-07-12
KR1020020040773A KR20040006481A (en) 2002-07-12 2002-07-12 Method for improving reliablity of etching and depositing device

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2913845A1 (en) * 2014-02-27 2015-09-02 Tokyo Electron Limited Cleaning method for plasma processing apparatus
CN111684568A (en) * 2018-02-08 2020-09-18 周星工程股份有限公司 Apparatus and method for cleaning chamber

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG10201607880PA (en) 2015-09-25 2017-04-27 Tokyo Electron Ltd METHOD FOR FORMING TiON FILM
JP6775322B2 (en) * 2015-09-25 2020-10-28 東京エレクトロン株式会社 Method of forming a TiON film
JP7175209B2 (en) * 2019-02-01 2022-11-18 東京エレクトロン株式会社 Deposition method

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US5200031A (en) * 1991-08-26 1993-04-06 Applied Materials, Inc. Method for removal of photoresist over metal which also removes or inactivates corrosion-forming materials remaining from one or more previous metal etch steps
US5326723A (en) * 1992-09-09 1994-07-05 Intel Corporation Method for improving stability of tungsten chemical vapor deposition
US5532447A (en) * 1993-12-06 1996-07-02 Aluminum Company Of America Method of cleaning an aluminum surface by plasma treatment
US6068729A (en) * 1997-03-03 2000-05-30 Applied Materials, Inc. Two step process for cleaning a substrate processing chamber
US6635569B1 (en) * 1998-04-20 2003-10-21 Tokyo Electron Limited Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus
US6368517B1 (en) * 1999-02-17 2002-04-09 Applied Materials, Inc. Method for preventing corrosion of a dielectric material
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Publication number Priority date Publication date Assignee Title
EP2913845A1 (en) * 2014-02-27 2015-09-02 Tokyo Electron Limited Cleaning method for plasma processing apparatus
CN111684568A (en) * 2018-02-08 2020-09-18 周星工程股份有限公司 Apparatus and method for cleaning chamber
US11427906B2 (en) * 2018-02-08 2022-08-30 Jusung Engineering Co., Ltd. Chamber cleaning device and chamber cleaning method
US12065734B2 (en) 2018-02-08 2024-08-20 Jusung Engineering Co., Ltd. Chamber cleaning device and chamber cleaning method

Also Published As

Publication number Publication date
JP2004036002A (en) 2004-02-05
KR20040006481A (en) 2004-01-24
TW200401352A (en) 2004-01-16
TWI319896B (en) 2010-01-21

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Owner name: HYNIX SEMICONDUCTOR INC., KOREA, REPUBLIC OF

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Effective date: 20030624

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