TWI319896B - Method for improving reliability of reaction apparatus - Google Patents

Method for improving reliability of reaction apparatus

Info

Publication number
TWI319896B
TWI319896B TW092118318A TW92118318A TWI319896B TW I319896 B TWI319896 B TW I319896B TW 092118318 A TW092118318 A TW 092118318A TW 92118318 A TW92118318 A TW 92118318A TW I319896 B TWI319896 B TW I319896B
Authority
TW
Taiwan
Prior art keywords
reaction apparatus
improving reliability
reliability
improving
reaction
Prior art date
Application number
TW092118318A
Other languages
Chinese (zh)
Other versions
TW200401352A (en
Inventor
Soo Jang Seong
Goo Choi Dong
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of TW200401352A publication Critical patent/TW200401352A/en
Application granted granted Critical
Publication of TWI319896B publication Critical patent/TWI319896B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
TW092118318A 2002-07-12 2003-07-04 Method for improving reliability of reaction apparatus TWI319896B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020020040773A KR20040006481A (en) 2002-07-12 2002-07-12 Method for improving reliablity of etching and depositing device

Publications (2)

Publication Number Publication Date
TW200401352A TW200401352A (en) 2004-01-16
TWI319896B true TWI319896B (en) 2010-01-21

Family

ID=30113157

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092118318A TWI319896B (en) 2002-07-12 2003-07-04 Method for improving reliability of reaction apparatus

Country Status (4)

Country Link
US (1) US20040007248A1 (en)
JP (1) JP2004036002A (en)
KR (1) KR20040006481A (en)
TW (1) TWI319896B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6284786B2 (en) * 2014-02-27 2018-02-28 東京エレクトロン株式会社 Cleaning method for plasma processing apparatus
JP6775322B2 (en) * 2015-09-25 2020-10-28 東京エレクトロン株式会社 Method of forming a TiON film
SG10201607880PA (en) 2015-09-25 2017-04-27 Tokyo Electron Ltd METHOD FOR FORMING TiON FILM
KR102516778B1 (en) * 2018-02-08 2023-04-03 주성엔지니어링(주) Apparatus and method for cleaning chamber
JP7175209B2 (en) * 2019-02-01 2022-11-18 東京エレクトロン株式会社 Deposition method

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59158525A (en) * 1983-02-28 1984-09-08 Mitsubishi Electric Corp Method for forming aluminum alloy film pattern
US5367139A (en) * 1989-10-23 1994-11-22 International Business Machines Corporation Methods and apparatus for contamination control in plasma processing
US5200031A (en) * 1991-08-26 1993-04-06 Applied Materials, Inc. Method for removal of photoresist over metal which also removes or inactivates corrosion-forming materials remaining from one or more previous metal etch steps
US5326723A (en) * 1992-09-09 1994-07-05 Intel Corporation Method for improving stability of tungsten chemical vapor deposition
JP2674488B2 (en) * 1993-12-01 1997-11-12 日本電気株式会社 Dry etching chamber cleaning method
US5532447A (en) * 1993-12-06 1996-07-02 Aluminum Company Of America Method of cleaning an aluminum surface by plasma treatment
JP2803556B2 (en) * 1994-02-03 1998-09-24 日本電気株式会社 Method of forming barrier metal layer
JP3413276B2 (en) * 1994-04-20 2003-06-03 東京エレクトロン株式会社 Thin film formation method
JP3851686B2 (en) * 1996-06-08 2006-11-29 キヤノンアネルバ株式会社 Thin film formation method by plasma CVD
US5843239A (en) * 1997-03-03 1998-12-01 Applied Materials, Inc. Two-step process for cleaning a substrate processing chamber
KR19990055203A (en) * 1997-12-27 1999-07-15 김영환 Metal wiring formation method of semiconductor device
US6635569B1 (en) * 1998-04-20 2003-10-21 Tokyo Electron Limited Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus
US6368517B1 (en) * 1999-02-17 2002-04-09 Applied Materials, Inc. Method for preventing corrosion of a dielectric material
US6401728B2 (en) * 1999-03-01 2002-06-11 United Microelectronics Corp. Method for cleaning interior of etching chamber
US6524963B1 (en) * 1999-10-20 2003-02-25 Chartered Semiconductor Manufacturing Ltd. Method to improve etching of organic-based, low dielectric constant materials
US6626188B2 (en) * 2001-06-28 2003-09-30 International Business Machines Corporation Method for cleaning and preconditioning a chemical vapor deposition chamber dome
KR20030061878A (en) * 2002-01-12 2003-07-23 삼성전자주식회사 Method of forming metal interconnection in semiconductor device
US6843858B2 (en) * 2002-04-02 2005-01-18 Applied Materials, Inc. Method of cleaning a semiconductor processing chamber
KR100447284B1 (en) * 2002-07-19 2004-09-07 삼성전자주식회사 Method of cleaning chemical vapor deposition chamber

Also Published As

Publication number Publication date
JP2004036002A (en) 2004-02-05
US20040007248A1 (en) 2004-01-15
TW200401352A (en) 2004-01-16
KR20040006481A (en) 2004-01-24

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees