US20020185607A1 - Ion source filament and method - Google Patents
Ion source filament and method Download PDFInfo
- Publication number
- US20020185607A1 US20020185607A1 US10/114,805 US11480502A US2002185607A1 US 20020185607 A1 US20020185607 A1 US 20020185607A1 US 11480502 A US11480502 A US 11480502A US 2002185607 A1 US2002185607 A1 US 2002185607A1
- Authority
- US
- United States
- Prior art keywords
- filament
- source
- active portion
- ion
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 150000002500 ions Chemical class 0.000 claims description 61
- 239000007789 gas Substances 0.000 claims description 36
- 239000001307 helium Substances 0.000 claims description 12
- 229910052734 helium Inorganic materials 0.000 claims description 12
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 8
- -1 helium ions Chemical class 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 230000001154 acute effect Effects 0.000 claims 2
- 230000001965 increasing effect Effects 0.000 abstract description 17
- 238000010884 ion-beam technique Methods 0.000 abstract description 12
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 238000002513 implantation Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 14
- 238000005468 ion implantation Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 6
- 238000010891 electric arc Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000605 extraction Methods 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/04—Ion sources; Ion guns using reflex discharge, e.g. Penning ion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/08—Ion sources; Ion guns using arc discharge
- H01J27/14—Other arc discharge ion sources using an applied magnetic field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
Definitions
- the invention relates generally to ion implantation and, more particularly, to an ion source filament, as well as methods and apparatus associated with the same.
- Ion implantation is a conventional technique for introducing dopants into semiconductor materials.
- An arc discharge may be generated within an arc chamber of an ion source to ionize a desired dopant gas.
- the ions may be extracted from the source to form an ion beam of selected energy which can be directed at the surface of a semiconductor wafer.
- the ions in the beam penetrate into the semiconductor wafer to form an implanted region.
- Some types of ion sources include an electrically resistive filament located within the arc chamber. To generate the arc discharge, current is passed through the filament while a voltage is applied between the filament and a positive electrode.
- Suitable filaments can be made of tungsten or tantalum.
- One conventional filament design known as a Bernas-type filament, includes a coil at its tip. Other filament types and designs are also known.
- the invention is directed to ion source filaments, as well as methods and apparatus associated with the same.
- the invention provides an ion source.
- the ion source includes an arc chamber, and a filament having at least a portion that is located in the arc chamber.
- the filament includes a pair of arm members joined by a non-coiled tip portion, wherein the tip portion defines a V-shape or a U-shape.
- the invention provides a method of using a filament in an ion source.
- the method includes using a first filament that includes an active portion having a first active surface area at first source operating conditions to generate source gas ions at a first efficiency.
- the method includes replacing the first source filament with a second source filament.
- the second source filament includes an active portion having a second active surface area less than the first active surface area.
- the method further includes using the second source filament at the first source operating conditions to generate the source gas ions at a second efficiency greater than the first efficiency.
- FIG. 1 schematically illustrates an ion implantation system that may be used in connection with embodiments of the invention.
- FIG. 2 a schematically illustrates an ion source that includes a conventional filament.
- FIG. 2 b schematically illustrates an ion source that includes a filament according to one embodiment of the invention.
- FIG. 3 is a side view of a filament according to one embodiment of the invention.
- FIG. 4 is a top view of the filament of FIG. 3.
- FIG. 5 is a graph comparing P ++ beam currents at various arc voltages obtained using a conventional filament and a filament of the invention as described in Example 1.
- FIG. 6 is a graph comparing P +++ beam currents at various arc voltages obtained using a conventional filament and a filament of the invention as described in Example 1.
- FIG. 7 is a graph comparing P ++ beam currents at various arc currents obtained using a conventional filament and a filament of the invention as described in Example 2.
- the invention provides ion source filaments, as well as methods and apparatus associated with the same.
- the source filaments have a design that includes a relatively small surface area from which electrons are emitted (i.e., active portion) as compared to certain conventional source filaments.
- Suitable designs include filaments that have a V-shape or U-shape active portion, rather than a coiled active portion as in certain conventional source filaments.
- the source filaments of the present invention can increase the efficiency of ion generation and, in particular, the generation of multiply charged ionic species. The increased ion generation efficiency may enable formation of ion beams having relatively high beam currents suitable for implantation.
- FIG. 1 A schematic block diagram of a typical ion implantation system 10 is shown in FIG. 1.
- An ion source 12 of the system includes a source gas supply 14 connected to an arc chamber 16 .
- an arc discharge is generated in the arc chamber by passing a current through a filament and applying a voltage to a filament.
- the arc discharge includes ionized source gas molecules.
- the ions may be extracted from the ion source to form an ion beam 18 which is directed along a beam path toward a target, such as a semiconductor wafer 20 .
- Ion beam 18 is deflected and focused by a mass analyzing magnet 22 . Downstream of the mass analyzing magnet 22 , the ion beam may be focused in the plane of a mass resolving slit assembly 26 . The ion beam 18 is accelerated to a desired energy by an accelerator 28 and impinges on wafer 20 located within an end station 29 . The entire region between ion source 12 and wafer 20 is evacuated during ion implantation.
- the ion beam 18 may be distributed over the surface of wafer 20 by mechanically scanning the wafer with respect to the beam, by scanning the ion beam with respect to the wafer or by a combination of these techniques.
- the wafers may be, for example, mounted on a rotating disk during ion implantation.
- End station 29 may include a system for automatically loading semiconductor wafers into one or more wafer positions for implantation and for removing the wafers from the wafer positions after ion implantation.
- the ion implantation system may include other components, not shown but known to the skilled person in the art, such as a dose measuring system, an electron flood system, and a tilt angle monitoring system, among others.
- FIG. 2A shows an arc chamber 30 of an ion source that includes a filament 32 a having a conventional design.
- filament 32 a includes a coiled tip portion 34 a .
- FIG. 2B shows an arc chamber 30 of an ion source that includes a filament 32 b having a design according to the present invention.
- Filament 32 b includes a non-coiled tip portion 34 b that is V-shaped.
- Active portions 36 a , 36 b of respective filaments 32 a , 32 b extend into the arc chamber a distance A.
- the term “active portion” refers to the portion of the filament that is located within the arc chamber.
- Active portions 36 a and 36 b have similar diameters, however the total length of active portion 36 b is shorter than the length of active portion 36 a . Therefore, the surface area of active portion 36 b is less than the surface area of active portion 36 a . As described further below, the smaller active surface area enables the filament of the invention (e.g., 32 b ) to generate ions at a greater efficiency than a conventional filament (e.g., 32 a ).
- filament designs of the present invention may also include a smaller active surface area than conventional filaments that have designs that do not include a coiled tip portion.
- gas molecules from supply 14 are fed into the chamber through a port 38 .
- Current is passed through filament 32 a ( 32 b , FIG. 2 b ), causing active portion 36 a ( 36 b , FIG. 2B) to heat up and thermionically emit electrons from its surface.
- a voltage i.e., arc voltage
- arc voltage for example between about 30 and about 150 volts
- a magnetic field may also be applied perpendicular to the electric field to increase the electron path within the apparatus and to increase the probability of collisions with gas molecules within the chamber.
- the source gas ions may be extracted to form ion beam 18 (FIG. 1).
- active portion 36 b As compared to active portion 36 a causes the active portion 36 b to be heated to a higher temperature than active portion 36 a at the same operation conditions (i.e., filament current, arc voltage, etc.).
- the higher temperature results in electrons of higher energy being thermionically emitted from active portion 36 b .
- the higher electron energies can increase the frequency of collisions that are capable of ionizing gas molecules.
- greater ionization efficiencies may be achievable by using filament 32 b as compared to filament 32 a operating at the same conditions.
- active portion 36 b has a smaller surface area than active portion 36 a , electron emission from active portion 36 b is localized in a smaller region than that from active portion 36 a .
- the region around active portion 36 b therefore, includes an increased density of electrons as compared to the region around active portion 36 a .
- the increased density of electrons enhances the probability that a source gas molecule in that region can be multiply ionized, for example, via highly energetic collisions with one or more electrons.
- This is also believed to increase the ionization efficiency of filament 32 b as compared to filament 32 a at the same operating conditions and, in particular, with respect to the generation of multiply charged ions.
- filaments of the invention depend in part upon the system and process in which they are used. It is generally desirable for the filament to have a similar cross-sectional area and for the filament to extend into the chamber the same distance (e.g., A in FIG. 1) as conventional filament designs. This can increase the compatibility of filaments of the invention with existing ion implantation systems and can facilitate replacing conventional filaments with filaments of the invention. As described above, filaments of the invention may have a reduced active portion length as compared to conventional filaments. In some embodiments, the length of the active portion of filaments of the invention (e.g., 32 b ) is between about 50% and about 80% of the length of the active portion of conventional filaments (e.g., 32 a ).
- the length of the active portion of filaments of the invention is between about 60% and about 70% of the length of the active portion of conventional filaments.
- a filament of the present invention which has an active portion length of about 1.3 inches can be used to replace a conventional filament that has an active portion length of about 2.0 inches and includes a coiled tip portion.
- filaments of the invention may have the same length as conventional filaments.
- the smaller active surface area of filaments of the invention may be as a result of a smaller cross-sectional area.
- FIGS. 3 and 4 further illustrate a design of filament 42 according to one embodiment of the invention.
- filament 42 includes substantially parallel arm members 44 , 46 which are joined by a V-shaped tip portion 48 .
- tip portion may be U-shaped and/or may define a radius of curvature.
- tip portion may have other shapes. It is also possible for arm members to be non-parallel.
- arm members 44 , 46 define a first plane B which intersects a plane C defined by tip portion 48 to form an angle D.
- This design may facilitate positioning tip portion 48 proximate to the gas inlet in the arc chamber which may be preferred in some cases. Because tip portion 48 is typically the hottest portion of the filament, locating the tip portion near the gas entry port can increase the density of emitted electrons in this area which can enhance ionization efficiency.
- arm members 44 , 46 and tip portion 48 may be in the same plane in some embodiments of the invention.
- Filaments used in connection with the present invention may be made of tungsten, tantalum, or other suitable materials known in the art.
- the filaments of the invention may be used in any suitable ion implantation system.
- the filaments may enhance ionization efficiency of any type of source gas.
- the filaments may be particularly useful for increasing production of ions from a source gas that has a high ionization potential such as helium, or for increasing production of multiply charged ionic species.
- the efficiency of He ++ production may be enhanced using filaments of the invention.
- a mixture of gas may be provided and ionized within the arc chamber.
- This example illustrates the production of an ion beam that includes multiply charged helium ions (He ++ ) by an ion source using a filament of the invention that has a reduced active surface area as compared to a conventional filament.
- a model EHPi- 500 , medium current ion implanter from Varian Semiconductor Equipment Associates, Inc. (VSEA), (Gloucester Mass., USA) was modified to include a 250 Volts (V) and 4 Amperes (A) Arc Power Supply and to allow gas pressures approximately 3 times the maximum of about 10 Torr allowed by the commercial machine configuration.
- the implanter was also modified to allow a source magnet current of 50 A and to permit an extraction current of up to 25 milliamps (mA).
- the filament used in the implanter had the same diameter and distance which the active portion protruded into the chamber as a conventional Bemas-type filament that included a coiled tip portion, typically used in this ion implanter.
- the total length of the active portion of the filament used was approximately 1.3 inches (3.3 cm) which was less than the 2.0 inches (5.1 cm) for the conventional filament.
- Helium was used as the source gas.
- the ion source was operated at an arc voltage of about 240 Volts, an arc current of about 4.3 A, a source pressure of approximately 25 Torr and an extraction current of about 15 mA.
- an He ++ set-up beam current of about 47 ⁇ A was measured. This set-up beam current translates into an He ++ current of about 40 ⁇ A at the target wafer.
- Table 1 shows other operating conditions and the measured He + and He ++ setup beam currents.
- This example illustrates the increased beam current, and thus ionization efficiency, obtained using a filament having a reduced active surface area in accordance with the invention as compared to a conventional filament.
- Example 2 The ion implanter described in Example 1 was used. A phosphorous gas source was used. A conventional filament (2.0 inch active portion) was used in one set of trials. A reduced surface area filament (1.3 inch active portion) was used in another set of trials. The conventional filament and the reduced surface area filament had the same diameter and extended the same distance into the chamber.
- FIG. 5 compares the beam current of P ++ ions obtained using the conventional filament versus the beam current the beam current of P ++ ions obtained using the reduced surface area filament.
- FIG. 6 compares the beam current of P +++ ions obtained using the conventional filament versus the beam current of P +++ ions obtained using the reduced surface area filament. As shown in FIGS. 5 and 6, the beam currents for both P ++ ions and P +++ ions obtained using the reduced surface area filament are greater than those obtained using the conventional filament. This is representative of the increased ionization of phosphorous obtained using the reduced surface area filament.
- FIG. 7 compares the beam current of P +++ ions obtained using the conventional filament versus the beam current of P +++ ions obtained using the reduced surface area filament. As shown in FIG. 7, the beam currents for P +++ ions obtained using the reduced surface area filament are greater than those obtained using the conventional filament. This is representative of the increased ionization of phosphorous obtained using the reduced surface area filament.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/114,805 US20020185607A1 (en) | 2001-04-03 | 2002-04-03 | Ion source filament and method |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US28106901P | 2001-04-03 | 2001-04-03 | |
US28107001P | 2001-04-03 | 2001-04-03 | |
US10/114,805 US20020185607A1 (en) | 2001-04-03 | 2002-04-03 | Ion source filament and method |
Publications (1)
Publication Number | Publication Date |
---|---|
US20020185607A1 true US20020185607A1 (en) | 2002-12-12 |
Family
ID=26960688
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/114,805 Abandoned US20020185607A1 (en) | 2001-04-03 | 2002-04-03 | Ion source filament and method |
US10/115,466 Expired - Lifetime US7223984B2 (en) | 2001-04-03 | 2002-04-03 | Helium ion generation method and apparatus |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/115,466 Expired - Lifetime US7223984B2 (en) | 2001-04-03 | 2002-04-03 | Helium ion generation method and apparatus |
Country Status (6)
Country | Link |
---|---|
US (2) | US20020185607A1 (fr) |
EP (1) | EP1374275A2 (fr) |
JP (1) | JP2004530268A (fr) |
KR (1) | KR20030085087A (fr) |
CN (1) | CN1526154A (fr) |
WO (2) | WO2002082492A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050133738A1 (en) * | 2003-12-19 | 2005-06-23 | Young-Byeong Joo | Ion source and ion implanter having the same |
US20060030134A1 (en) * | 2004-08-04 | 2006-02-09 | Yong-Kwon Kim | Ion sources and ion implanters and methods including the same |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070178679A1 (en) * | 2006-01-28 | 2007-08-02 | Varian Semiconductor Equipment Associates, Inc. | Methods of implanting ions and ion sources used for same |
US20070178678A1 (en) * | 2006-01-28 | 2007-08-02 | Varian Semiconductor Equipment Associates, Inc. | Methods of implanting ions and ion sources used for same |
US7642150B2 (en) * | 2006-11-08 | 2010-01-05 | Varian Semiconductor Equipment Associates, Inc. | Techniques for forming shallow junctions |
US8003957B2 (en) * | 2008-02-11 | 2011-08-23 | Varian Semiconductor Equipment Associates, Inc. | Ethane implantation with a dilution gas |
US7723219B2 (en) | 2008-02-22 | 2010-05-25 | Applied Materials, Inc. | Plasma immersion ion implantation process with reduced polysilicon gate loss and reduced particle deposition |
US7687786B2 (en) * | 2008-05-16 | 2010-03-30 | Twin Creeks Technologies, Inc. | Ion implanter for noncircular wafers |
FR2942801B1 (fr) * | 2009-03-05 | 2012-03-23 | Quertech Ingenierie | Procede de traitement d'une piece en elastomere par des ions multi-energies he+ et he2+ pour diminuer le frottement |
US8227763B2 (en) * | 2009-03-25 | 2012-07-24 | Twin Creeks Technologies, Inc. | Isolation circuit for transmitting AC power to a high-voltage region |
JP5446674B2 (ja) * | 2009-09-29 | 2014-03-19 | 日新イオン機器株式会社 | プラズマ源およびそれを備えるイオン源 |
TWI594301B (zh) * | 2014-08-25 | 2017-08-01 | 漢辰科技股份有限公司 | 離子佈植方法與離子佈植機 |
US10087520B2 (en) | 2016-06-21 | 2018-10-02 | Axcelis Technologies, Inc. | Implantation using solid aluminum iodide (AlI3) for producing atomic aluminum ions and in situ cleaning of aluminum iodide and associated by-products |
US10676370B2 (en) * | 2017-06-05 | 2020-06-09 | Axcelis Technologies, Inc. | Hydrogen co-gas when using aluminum iodide as an ion source material |
US10297424B2 (en) | 2017-06-26 | 2019-05-21 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Filament, ionization chamber, and ion-implantation apparatus |
CN107331596B (zh) * | 2017-06-26 | 2019-02-12 | 武汉华星光电半导体显示技术有限公司 | 灯丝、电离室及离子植入设备 |
CN110976694B (zh) * | 2019-11-27 | 2021-11-05 | 合肥聚能电物理高技术开发有限公司 | 一种真空状态下钨极灯丝快速成型装置及其成型工艺 |
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US5675152A (en) * | 1996-01-16 | 1997-10-07 | Taiwan Semiconductor Manufacturing Company Ltd. | Source filament assembly for an ion implant machine |
US6688017B2 (en) * | 2002-05-21 | 2004-02-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for aligning an extraction electrode to an arc chamber |
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US4361762A (en) * | 1980-07-30 | 1982-11-30 | Rca Corporation | Apparatus and method for neutralizing the beam in an ion implanter |
US4463255A (en) * | 1980-09-24 | 1984-07-31 | Varian Associates, Inc. | Apparatus for enhanced neutralization of positively charged ion beam |
US4595837A (en) * | 1983-09-16 | 1986-06-17 | Rca Corporation | Method for preventing arcing in a device during ion-implantation |
US4697085A (en) * | 1986-01-28 | 1987-09-29 | Rca Corporation | Apparatus and method for producing ions |
US4691109A (en) * | 1986-01-28 | 1987-09-01 | Rca Corporation | Apparatus and method for producing ions |
US5262652A (en) * | 1991-05-14 | 1993-11-16 | Applied Materials, Inc. | Ion implantation apparatus having increased source lifetime |
US5517084A (en) * | 1994-07-26 | 1996-05-14 | The Regents, University Of California | Selective ion source |
JPH1027553A (ja) * | 1996-07-10 | 1998-01-27 | Nissin Electric Co Ltd | イオン源 |
US5943594A (en) * | 1997-04-30 | 1999-08-24 | International Business Machines Corporation | Method for extended ion implanter source lifetime with control mechanism |
US6001172A (en) * | 1997-08-05 | 1999-12-14 | Advanced Technology Materials, Inc. | Apparatus and method for the in-situ generation of dopants |
JPH1167114A (ja) * | 1997-08-14 | 1999-03-09 | Toshiba Microelectron Corp | プラズマ生成装置およびイオン注入装置 |
US6060715A (en) * | 1997-10-31 | 2000-05-09 | Applied Materials, Inc. | Method and apparatus for ion beam scanning in an ion implanter |
JP2000208091A (ja) * | 1999-01-12 | 2000-07-28 | Sony Corp | イオン注入装置 |
US6356026B1 (en) * | 1999-11-24 | 2002-03-12 | Texas Instruments Incorporated | Ion implant source with multiple indirectly-heated electron sources |
DE10047688B4 (de) * | 2000-09-24 | 2004-10-28 | Roentdek-Handels Gmbh | Ionenquelle |
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2002
- 2002-04-03 WO PCT/US2002/010242 patent/WO2002082492A1/fr not_active Application Discontinuation
- 2002-04-03 JP JP2002580364A patent/JP2004530268A/ja active Pending
- 2002-04-03 US US10/114,805 patent/US20020185607A1/en not_active Abandoned
- 2002-04-03 WO PCT/US2002/010113 patent/WO2002082489A2/fr not_active Application Discontinuation
- 2002-04-03 KR KR10-2003-7012924A patent/KR20030085087A/ko not_active Application Discontinuation
- 2002-04-03 CN CNA028076729A patent/CN1526154A/zh active Pending
- 2002-04-03 EP EP02721641A patent/EP1374275A2/fr not_active Withdrawn
- 2002-04-03 US US10/115,466 patent/US7223984B2/en not_active Expired - Lifetime
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US5675152A (en) * | 1996-01-16 | 1997-10-07 | Taiwan Semiconductor Manufacturing Company Ltd. | Source filament assembly for an ion implant machine |
US6688017B2 (en) * | 2002-05-21 | 2004-02-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for aligning an extraction electrode to an arc chamber |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050133738A1 (en) * | 2003-12-19 | 2005-06-23 | Young-Byeong Joo | Ion source and ion implanter having the same |
US7220976B2 (en) * | 2003-12-19 | 2007-05-22 | Samsung Electronics Co., Ltd. | Ion source and ion implanter having the same |
US20060030134A1 (en) * | 2004-08-04 | 2006-02-09 | Yong-Kwon Kim | Ion sources and ion implanters and methods including the same |
Also Published As
Publication number | Publication date |
---|---|
WO2002082489A3 (fr) | 2003-03-27 |
EP1374275A2 (fr) | 2004-01-02 |
JP2004530268A (ja) | 2004-09-30 |
KR20030085087A (ko) | 2003-11-01 |
US7223984B2 (en) | 2007-05-29 |
WO2002082489A2 (fr) | 2002-10-17 |
WO2002082492A1 (fr) | 2002-10-17 |
CN1526154A (zh) | 2004-09-01 |
US20030038246A1 (en) | 2003-02-27 |
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