US20020121072A1 - Solder coated lid - Google Patents

Solder coated lid Download PDF

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Publication number
US20020121072A1
US20020121072A1 US10/013,822 US1382201A US2002121072A1 US 20020121072 A1 US20020121072 A1 US 20020121072A1 US 1382201 A US1382201 A US 1382201A US 2002121072 A1 US2002121072 A1 US 2002121072A1
Authority
US
United States
Prior art keywords
lid
package
solder
base
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/013,822
Other languages
English (en)
Inventor
Hideyuki Yoshino
Sanae Taniguchi
Mitsuo Zen
Takenori Azuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal SMI Electronics Device Inc
Senju Metal Industry Co Ltd
Original Assignee
Sumitomo Metal SMI Electronics Device Inc
Senju Metal Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal SMI Electronics Device Inc, Senju Metal Industry Co Ltd filed Critical Sumitomo Metal SMI Electronics Device Inc
Assigned to SUMITOMO METAL (SMI) ELECTRONICS DEVICES INC., SENJU METAL INDUSTRY CO., LTD. reassignment SUMITOMO METAL (SMI) ELECTRONICS DEVICES INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: YOSHINO, HIDEYUKI, AZUMA, TAKENORI, TANIGUCHI, SANAE, ZEN, MITSUO
Publication of US20020121072A1 publication Critical patent/US20020121072A1/en
Priority to US10/861,371 priority Critical patent/US7182240B2/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12597—Noncrystalline silica or noncrystalline plural-oxide component [e.g., glass, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12708—Sn-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12944—Ni-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12951—Fe-base component

Definitions

  • This invention relates to a solder coated lid for a package for housing an electronic device, such as a semiconductor device, and to a package employing such a lid.
  • a solder coated lid for a package for housing an electronic device which enables the package to be sealed without damaging electronic devices mounted in the package.
  • FIG. 1( a ) is a schematic cross-sectional elevation of a portion of a conventional package.
  • a lid 18 is installed on the upper end 16 of a ceramic base 14 housing various electronic devices, such as a quartz crystal unit 12 , connected to each other by wire bonding 10 .
  • FIG. 1( b ) is an enlarged schematic exploded cross-sectional elevation showing the structure of the lid 18 and the upper end 16 of the ceramic base 14 in detail.
  • the upper end 16 of the base 14 which is made of an alumina ceramic, for example, is metallized with a tungsten layer 20 by the simultaneous sintering method or other suitable method.
  • a nickel layer 22 is provided atop the tungsten layer 20 , and the nickel layer 22 is covered by a silver brazing layer 24 .
  • a Kovar ring 26 (which is nickel plated on its surface) is installed atop the nickel layer 22 , and then a Ni/Au layer 28 is provided atop the silver brazing layer 24 .
  • the lid 18 comprises a body 19 made of Kovar, and the body 19 is plated to form a nickel film 30 on its surface.
  • the lid 18 is installed on the upper end 16 of the base 14 of the package and is secured atop the Kovar ring 26 by seam welding.
  • This method of sealing a package involves numerous manufacturing steps, and installing the lid 18 through the ring 26 and performing brazing are difficult. Furthermore, this method has problems with respect to costs. In addition, with this sealing method, it is difficult to achieve reduce the size and thickness of the package. Thus, there is a need for improved methods and structures for sealing a package for electronic devices.
  • the present invention provides a lid for a package for an electronic device which can effectively realize decreases in the size and thickness of the package.
  • the present invention also provides a lid for a package for an electronic device having a simple structure and a low cost which enables sealing to be performed at a low temperature at which there is little vaporization of solder components.
  • solder alloys have come to be widely used as solder alloys.
  • the present invention also provides a lid for a package for an electronic device which uses a lead-free solder alloy for joining the lid to a base of the package.
  • the present invention additionally provides a package for an electronic device equipped with such a lid.
  • the present inventors found that by coating the body of a lid for a package with a lead-free solder, such as an Sn—Sb based lead-free solder, by hot dipping or cladding, the above-described problems of conventional sealing methods can be solved. Sealing of a package with such a solder coated lid can be performed at a low temperature at which there is little vaporization of solder components, so the solder does not have a harmful effect on electronic devices disposed within the package, and a package of high quality can be obtained.
  • a lead-free solder such as an Sn—Sb based lead-free solder
  • a solder coated lid for a package for an electronic device has a lead-free solder layer comprising a Sn—Sb based solder with a liquidus temperature of at least 220 degrees C. provided on at least a region of the lid where the lid is to be joined to a base of a package.
  • a solder coated lid for a package for an electronic device has a lead-free solder layer comprising an Sn—Ag—Cu based solder alloy.
  • a lid for a package according to the present invention is not limited to use with any particular type of package.
  • the package is one for housing a quartz crystal unit, i.e., crystal resonator or crystal oscillator.
  • the lead-free solder layer may be formed directly atop a metal or alloy plate.
  • an undercoat such as a nickel layer may be provided beneath the solder layer atop the metal or alloy plate.
  • a packaged electronic device comprises a base having a recess, an electronic device disposed in the recess, and a lid according to the present invention covering the recess and sealed to the base by soldering.
  • FIG. 1( a ) is a schematic cross-sectional elevation of a package for an electronic device equipped with a lid of a known structure
  • FIG. 1( b ) is an enlarged schematic exploded cross-sectional elevation of a portion of the package of FIG. 1( a ).
  • FIG. 2 is a schematic view of manufacturing steps in a method of manufacturing a solder coated lid according to the present invention.
  • FIG. 3 is a schematic cross-sectional elevation of a package for an electronic device equipped with a solder coated lid according to the present invention.
  • FIG. 4 is a graph showing the amount of evaporated Sn as a function of sealing temperature for examples of a solder coated lid according to the present invention.
  • the package typically will include a base made of an electrically insulating material which can withstand the heating temperature at the time of sealing the package.
  • a typical material having suitable properties is a ceramic.
  • a lid according to the present invention will typically be used to seal a ceramic package having a base made of a ceramic material.
  • a ceramic material for a ceramic package may be any desired material conventionally used for ceramic packages, such as alumina, aluminum nitride, mullite, and glass ceramics.
  • a ceramic base may be a singlelayer or multilayer member, and there are no restrictions on the method of its manufacture, on a method of forming internal wiring, or the like.
  • the package base When a lid according to the present invention is flat, the package base will typically have a recess in which a semiconductor device or other electronic device is mounted. In this case, the lid will usually have a size so as to completely cover the recess. The lid is placed atop the recess and is then sealed to the base with a lead-free solder.
  • a ceramic base does not have joinability (wettability), so when a ceramic base is employed, it is necessary to form a suitable metal layer having excellent joinability on the portion of the base which is sealed to the lid, i.e., the upper surface of the base surrounding the recess. From the standpoint of maintaining joinability, this metal layer is preferably formed by performing Ni plating and Au plating after metallizing treatment with a metal having a high melting point, such as W or Mo.
  • a metal having a high melting point such as W or Mo.
  • other types of metal layers used to seal a ceramic package can also be used in the present invention.
  • a lid for sealing a package comprises a metal plate which is clad on one side thereof with a lead-free solder.
  • the lead-free solder which is used to clad the metal plate melts at the time of sealing and forms an hermetic seal, i.e., airtight seal between the lid and the base of the package.
  • This thickness of the metal plate is preferably on the order of 0.1-1 mm, and the thickness of the cladding material is preferably on the order of 20-80 micrometers.
  • a clad plate can be manufactured by stacking a metal plate and a cladding material comprising a lead-free solder atop each other and subjecting them to cold or hot rolling. Either cold or hot rolling is preferably performed with a reduction in the range of 30-70%.
  • a solder coated lid according to the present invention for sealing a package in an airtight manner can be manufactured from the clad metal plate by, for example, blanking with a press to obtain a desired shape and dimensions and then, if necessary, performing additional treatment such as drawing. Since the cladding material is flexible, it is easy to handle. Therefore, a lead-free solder coated lid according to the present invention can easily be mass produced, and it is extremely easy to handle.
  • the cladding material will typically be coextensive in area with the metal plate on which it is clad, but it is also possible for it to have a smaller area than the metal plate.
  • the material used to form the metal plate for the lid is a material having a coefficient of thermal expansion close to that of the base of the package.
  • the base of the package is made of a ceramic
  • suitable materials for the metal plate which forms the body of the lid are Alloy 42 (Fe-42Ni), Alloy 45 (Fe-45Ni), and Kovar (Fe-29Ni-17Co).
  • the cladding material which is used to clad the metal plate comprises a lead-free solder, such as an Sn—Sb based solder alloy, having a liquidus temperature of at least 220 degrees C.
  • a solder alloy layer is formed on a lid by hot dipping.
  • FIG. 2 is a schematic diagram showing steps in an example of a method of manufacturing a solder coated lid according to the present invention by hot dipping.
  • a metal strip 36 of Kovar, Alloy 42, Alloy 45, or other suitable material is continuously immersed in a molten solder bath 34 while moving in the direction of the arrows.
  • hot dip plating is performed on only one side of the strip to form a lead-free solder layer 38 .
  • the metal strip 36 on which the solder layer 38 is formed by hot dipping can then formed into a lid having a prescribed shape and dimensions by blanking. After inspection of the lid, secondary working such as drawing may be performed, if necessary, to obtain a completed solder coated lid 40 .
  • the solder used for hot dipping is a lead-free solder alloy, such as an Sn—Sb based alloy, having a liquidus temperature of at least 220 degrees C.
  • a suitable alloy is a Sn-5%Sb alloy. If necessary, Ag, Cu, and the like may be added in suitable amounts.
  • Sn—Ag—Cu based solder alloy such as an alloy containing Ag: greater than 3.0% and at most 5.0%, Cu: 0.1-3.0% and preferably 0.5-3.0%, if necessary Sb: at most 5%, and a remainder of Sn).
  • FIG. 3 is a schematic cross-sectional elevation of a package which is sealed with a solder coated lid according to the present invention which was manufactured in the manner shown in FIG. 2.
  • the present invention will be described based on the solder coated lid, since the sealing effect of a clad lid is substantially the same as that of the solder coated lid.
  • the same elements as in FIG. 1 are indicated by the same reference numbers.
  • a W—Ni—Au metal layer 17 is provided on the upper end 16 of the package base 14 , the solder coated lid 40 is mounted directly on the layer 17 , and sealing can be carried out by heating of the solder to melt the solder layer and join the lid 40 to the base 14 .
  • a package employing a lid according to the present invention does not require a Kovar ring at the upper end 16 of the package base 14 , so fewer manufacturing steps are required to prepare the base 14 for sealing.
  • a solder layer 38 is provided over the entire lower surface of the lid 40 , but it is possible to provide a solder layer 38 only in the region of the lid 40 which directly contacts the upper end 16 of the package base 14 or in a slightly larger region. In that case, the amount of solder needed for coating the lid is reduced, and material costs are decreased. In addition, the opportunity for solder components to vaporize during sealing is decreased, so a deterioration in the properties of electronic devices disposed in the base 14 due to contamination by solder components during sealing can be avoided.
  • a solder coated lid according to the present invention employs a lead-free solder, the lid does not cause environmental pollution from the use of lead.
  • a lead-free solder alloy comprising 5% Sb and a remainder substantially Sn has a solidus temperature of 240 degrees C. and a liquidus temperature of 243 degrees C., which are higher than the melting points of solders used for mounting of packages on a substrate, so the lead-free solder alloy does not melt when a sealed package is subsequently mounted on a printed circuit board or other substrate.
  • solder layer is formed by hot dipping or by cladding.
  • sealing of a lid to a base of a package can be performed at a low temperature.
  • a low sealing temperature provides the significant advantage that there is little vaporization of solder components during sealing.
  • a package being sealed contains a quartz crystal unit (crystal resonator)
  • In or Sn adheres to an Au circuit on the surface of the crystal resonator variations in oscillating properties take place, and the resonator may be unable to operate in the desired manner. Therefore, up to now, solder has not been used for sealing of packages for crystal resonators due to possible contamination of the crystal resonators by components of the solder.
  • the sealing temperature can be decreased, and adhesion of In and Sn to the surface of an Au circuit of an electronic device in a package, such as a crystal resonator, can be effectively prevented.
  • a solder coated lid according to the present invention can be used for packages for all types of semiconductor devices as well as other types of electronic devices. As described above, it is particularly advantageous for use with a package housing a quartz crystal unit, e.g., crystal resonator or quartz crystal oscillator, since sealing can be performed at a low temperature, but it can also be used with packages for IC chips and SAW filter elements, for example.
  • a quartz crystal unit e.g., crystal resonator or quartz crystal oscillator
  • Hot dipping of the solder was carried out in the manner shown in FIG. 2 by dipping only one side of a metal strip in a molten solder bath.
  • a solder coated lid according to the present invention was also formed by a cladding method employing rolling.
  • a solder coated lid according to the present invention which was manufactured in this manner by hot dipping or cladding was then used to seal an actual package for an electronic device.
  • the sealing conditions are summarized below.
  • seal structure same as in FIG. 3
  • peak temperature 240 degrees C., 260 degrees C., 280 degrees C., 300 degrees C.
  • Table 2 shows sealing airtightness (G/L). In almost every case, an hermetic seal was achieved both initially and after passage through a furnace.
  • Table 3 shows the results of an environmental test carried out to evaluate reliability. It can be seen that there were no problems with respect to reliability even after passing two times through a furnace even at a mounting temperature using a lead-free solder.
  • Airtightness Conditions Reliability (Rej./N) Mounting Passing 2 times through 0/320 pc Temperature furnace at temperature of at Heating least 220° C. for 6 minutes, peak temperature of 270° C. ⁇ An environmental test was performed on the above samples Resistance to ⁇ 65° C. ⁇ 150° C. 0/240 pc temperature cycle 2000 cycles Resistance to ⁇ 65° C. ⁇ 150° C. 0/80 pc thermal shock 100 cycles
  • FIG. 4 is a graph showing the relationship between the sealing temperature after lid sealing and the Sn count for a solder coated lid according to the present invention.
  • the amount of vaporized Sn at the time of sealing i.e., the amount of adhesion of Sn to an Au surface was small.
  • the vaporization of solder components and the amount of adhesion were extremely small using a coated lid formed by either hot dipping or cladding.
  • a lid according to the present invention can be applied to a package for a crystal resonator.
  • the amount of vaporization when using a Pb alloy solder was 200 cps.
  • a solder coated lid according to the present invention is coated with a lead-free solder alloy having a liquidus temperature of at least 220 degrees C., so a low sealing temperature is possible. Due to the low sealing temperature, contamination of electronic components due to vaporization of solder components during sealing can be largely suppressed. Therefore, the present invention has great practical value.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
US10/013,822 2000-12-14 2001-12-13 Solder coated lid Abandoned US20020121072A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/861,371 US7182240B2 (en) 2000-12-14 2004-06-07 Solder coated lid

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000380985A JP4328462B2 (ja) 2000-12-14 2000-12-14 はんだコートリッド
JP2000-380985 2000-12-14

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/861,371 Continuation US7182240B2 (en) 2000-12-14 2004-06-07 Solder coated lid

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US20020121072A1 true US20020121072A1 (en) 2002-09-05

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US10/013,822 Abandoned US20020121072A1 (en) 2000-12-14 2001-12-13 Solder coated lid
US10/861,371 Expired - Lifetime US7182240B2 (en) 2000-12-14 2004-06-07 Solder coated lid

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Application Number Title Priority Date Filing Date
US10/861,371 Expired - Lifetime US7182240B2 (en) 2000-12-14 2004-06-07 Solder coated lid

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JP (1) JP4328462B2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040094320A1 (en) * 2002-07-19 2004-05-20 Masaaki Goto Lid for use in packaging an electronic device and method of manufacturing the lid

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6167494B2 (ja) * 2012-09-26 2017-07-26 セイコーエプソン株式会社 電子デバイス用容器の製造方法、電子デバイスの製造方法、電子デバイス、電子機器及び移動体機器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4356047A (en) * 1980-02-19 1982-10-26 Consolidated Refining Co., Inc. Method of making ceramic lid assembly for hermetic sealing of a semiconductor chip
US4331258A (en) * 1981-03-05 1982-05-25 Raychem Corporation Sealing cover for an hermetically sealed container
US4746583A (en) * 1986-11-21 1988-05-24 Indium Corporation Ceramic combined cover
JP2952303B2 (ja) * 1988-11-15 1999-09-27 旭テクノグラス株式会社 複合型回路装置
US5130164A (en) * 1989-04-28 1992-07-14 United Technologies Corporation Solder-coating method
US5821455A (en) * 1993-04-26 1998-10-13 Sumitomo Metal (Smi) Electronics Devices, Inc. Lid with variable solder layer for sealing semiconductor package, package having the lid and method for producing the lid
JPH07221217A (ja) * 1993-12-10 1995-08-18 Sumitomo Kinzoku Ceramics:Kk 半導体パッケージ用リッドおよび半導体パッケージ
WO2001028726A1 (fr) * 1998-04-20 2001-04-26 Senju Metal Industry Co., Ltd. Materiau de revetement a brasure et procede de production correspondant
US6503338B1 (en) * 2000-04-28 2003-01-07 Senju Metal Industry Co., Ltd. Lead-free solder alloys
JP3960156B2 (ja) * 2002-07-19 2007-08-15 千住金属工業株式会社 板状基板封止用リッドの製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040094320A1 (en) * 2002-07-19 2004-05-20 Masaaki Goto Lid for use in packaging an electronic device and method of manufacturing the lid
US7142435B2 (en) * 2002-07-19 2006-11-28 Senju Metal Industry Co., Ltd. Lid for use in packaging an electronic device and method of manufacturing the lid

Also Published As

Publication number Publication date
US20040258948A1 (en) 2004-12-23
JP4328462B2 (ja) 2009-09-09
JP2002184886A (ja) 2002-06-28
US7182240B2 (en) 2007-02-27

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Owner name: SENJU METAL INDUSTRY CO., LTD., JAPAN

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