US20010050421A1 - Semiconductor apparatus - Google Patents
Semiconductor apparatus Download PDFInfo
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- US20010050421A1 US20010050421A1 US09/836,939 US83693901A US2001050421A1 US 20010050421 A1 US20010050421 A1 US 20010050421A1 US 83693901 A US83693901 A US 83693901A US 2001050421 A1 US2001050421 A1 US 2001050421A1
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- semiconductor devices
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Abstract
An electrode wiring structure is disclosed which realizes a smaller semiconductor apparatus as a power semiconductor module with the current path set as shortest as possible. The semiconductor apparatus includes: a plurality of semiconductor devices mounted in one array or more on a substrate; a main current electrode mounted along the array(s) of the semiconductor devices, and commonly connected to each of the plurality of semiconductor devices through the substrate by being connected to the substrate through a plurality of wires; an insulated base mounted on the main current electrode, and covering the connection area of the wires connecting the main current electrode; and a drive electrode mounted on the base, and commonly connected to each of the semiconductor devices.
Description
- 1. Field of the Invention
- The present invention relates to a semiconductor apparatus used mainly as a switching device in, for example, a motor drive device in an inverter, an AC servomotor, an air conditioner, etc., or a power supply device in a vehicle, a welding machine, etc., and more specifically to the improvement of an electrode wiring structure in a semiconductor apparatus applicable as a power semiconductor module.
- 2. Description of the Related Art
- Normally, a semiconductor module can be, for example, a plurality of semiconductor devices (semiconductor chips) connected in parallel to have a larger current capacity, a simple circuit of several types of semiconductor devices, semiconductor devices into which a drive circuit is incorporated, etc.
- FIG. 1 is a plan view of an example of a conventional power semiconductor module.
- In the semiconductor module shown in FIG. 1, an
insulated substrate 2 is mounted on abase plate 1 for fixing. On theinsulated substrate 2, a plurality of (four as an example shown in FIG. 1) semiconductor devices (semiconductor chips) 4 are mounted in series through aconductive plate 3. In this example, thesemiconductor device 4 is a MOSFET (metal oxide semiconductor field-effect transistor) having a source electrode and a gate electrode on the top side, and a drain electrode on the reverse side. - The
conductive plate 3 is electrically connected commonly to the drain electrode of eachsemiconductor device 4 by mounting thesemiconductor device 4 directly on it, thereby functioning as a drain electrode of the entire module. On the insulatedsubstrate 2, asource electrode 5 and agate electrode 6 of the entire module are respectively mounted along the array of thesemiconductor devices 4 and on either side of the conductive plate (drain electrode) 3 on which thesemiconductor devices 4 are mounted. - The
source electrode 5 is electrically connected commonly to the source electrode of eachsemiconductor device 4 through a wire (bonding wire) 7, and thegate electrode 6 is electrically connected commonly to the gate electrode of eachsemiconductor device 4 through a wire (bonding wire) 8. A gate resistor such as a silicon chip resistor, etc. can be provided on thegate electrode 6, and thewire 8 can be connected thereto. - Furthermore, a
drain terminal 9 is led outside the module as an external terminal from a portion of the conductive plate (drain electrode) 3, asource terminal 10 is led outside the module as an external terminal from a portion of thesource electrode 5, and agate terminal 11 is led outside the module as an external terminal from a portion of thegate electrode 6. - Although not shown in the attached drawings, the entire module is normally put in a resin package, and the space in the package is filled with gel or epoxy resin, etc. The above mentioned external terminal is drawn in a two-dimensional array in FIG. 1, but it is appropriately bent and exposed on the top or side of the package.
- The semiconductor module with the above mentioned configuration has a plurality of
semiconductor devices 4 connected in parallel between thedrain terminal 9 and thesource terminal 10. Therefore, in principle, the main current flowing between thedrain terminal 9 and thesource terminal 10 can be controlled by applying a control voltage between thegate terminal 11 and thesource terminal 10, and simultaneously setting allsemiconductor devices 4 ON/OFF. - In the conventional semiconductor module as shown in FIG. 1, restrictions are placed by the
gate electrode 6 especially on the wiring pattern from the drain electrode (conductive plate) 3 to thedrain terminal 9. That is, thedrain terminal 9 is led outside through the path from the end portion of theconductive plate 3 without passing thegate electrode 6. - Therefore, the lengths of the current paths are entirely long when the main current flows from the
drain terminal 9 to thesource terminal 10 through eachsemiconductor device 4, and the lengths are uneven depending on the position of eachsemiconductor device 4. Especially, the current path through thesemiconductor device 4 shown in FIG. 1 on the right is considerably longer than the current path through thesemiconductor device 4 on the left. - Since the inductance generated in the current path is substantially proportional to the length of the path, the inductance increases correspondingly when the current path is long as described above. As a result, the surge voltage generated when the
semiconductor device 4 is turned off rises, thereby possibly destroying thesemiconductor device 4. - In addition, when the lengths of current paths are not even, the wiring resistance also becomes uneven depending on the position of each
semiconductor device 4. As a result, the current value becomes unbalanced, thereby leading excess current through only a part of thesemiconductor devices 4, and also possibly destroying thesemiconductor devices 4. Therefore, with the problem of the above mentioned excess current to a part of thesemiconductor devices 4 has prevented the maximum current through the module from largely increasing. - Furthermore, with the
drain terminal 9 directly connected to theconductive plate 3 to be mounted on theinsulated substrate 2 as the semiconductor module as shown in FIG. 1, there can easily be a crack in the joint (the portion encompassed by a circle A indicated by a dot-and-dash line) between thedrain terminal 9 and theconductive plate 3 due to the expansion and contraction by the heat from thesemiconductor devices 4. - Therefore, to solve the above mentioned problems, the Applicant of the present invention has suggested a semiconductor module having the structure as shown in FIG. 2.
- In the semiconductor module shown in FIG. 2, there is the
conductive plate 3 mounted on the insulatedsubstrate 2 having adrain electrode 12 on one side, and thesource electrode 5 on the other side. On thedrain electrode 12, thegate electrode 6 is mounted through an insulating plate (insulating layer) 13. - Furthermore, the
drain electrode 12 is connected to theconductive plate 3 through a plurality ofwires 14 equally arranged at predetermined distances from one another along the array of thesemiconductor devices 4. Thus, thedrain electrode 12 is commonly connected to each of thesemiconductor devices 4 through thewires 14 and theinsulating plate 13. - In addition, two
drain terminals 9 are led from thedrain electrode 12, and twosource terminals 10 are led from thesource electrode 5. Thesedrain terminals 9 andsource terminals 10 are provided on either side of theconductive plate 3. - With the above mentioned configuration, the
drain electrode 12 and theconductive plate 3 are connected through thewires 14 arranged at predetermined distances along the array of thesemiconductor devices 4. Therefore, thedrain electrode 12 and theinsulating plate 13 are equivalent to the structure in which they are directly connected on their sides (the plane along the above mentioned array direction). Therefore, the main current flows substantially straight from thedrain electrode 12 to each of thesemiconductor devices 4 through theconductive plate 3, and then straight to thesource electrode 5. Since thedrain terminal 9 and thesource terminal 10 are opposite each other, the main current flows substantially straight from thedrain terminal 9 to thesource terminal 10 through the shortest path. - Thus, since the current path of the main current flows substantially straight from the
drain terminal 9 to thesource terminal 10, the length of the current path can be the shortest possible. As a result, the inductance can be reduced, and the surge voltage can be suppressed, thereby enhancing the reliability of the entire module. - Furthermore, since the length of the current path can be leveled in the module regardless of the position of each
semiconductor device 4, the wiring resistance can be leveled through each current path. As a result, a current does not flow excessively through only a part of the semiconductor devices, thereby leveling the value of the main current, and increasing the maximum current through the entire module. - Furthermore, since the
drain electrode 12 is not directly connected to theconductive plate 3, but they are connected indirectly through thewire 14, the conventional crack can be effectively prevented although thesemiconductor devices 4 repeat expansion and contraction by their heat. - Thus, with the semiconductor module shown in FIG. 2, the above mentioned problems with the conventional semiconductor module shown in FIG. 1 can be effectively solved.
- However, with the configuration in which the
drive gate electrode 6 is mounted on thedrain electrode 12, thedrain electrode 12 requires the space for thegate electrode 6 and thewire 14 for connection as clearly shown in FIG. 3 which is an enlarged sectional view along B-B shown in FIG. 2. Therefore, the width W1 of thedrain electrode 12 is necessarily be large, thereby preventing the realization of a smaller apparatus. - An object of the invention is to provide a smaller semiconductor apparatus with the above mentioned problems with the conventional technology (increasing surge voltage, unbalanced current, cracks, etc.) successfully solved.
- To attain the above mentioned object, the present invention has the following configuration.
- That is, the semiconductor apparatus according to the present invention includes: a plurality of semiconductor devices mounted in one or more arrays on a substrate; a main current electrode mounted along the array(s) of the semiconductor devices, and commonly connected to each of the plurality of semiconductor devices through the substrate by being connected to the substrate through a plurality of wires; an insulated base mounted on the main current electrode, and covering a joint area between the main current electrode and the wires; and a drive electrode mounted on the base, and commonly connected to each of the plurality of semiconductor devices.
- The substrate can be a conductive plate or a conductive layer mounted on an insulated substrate. However, it is obvious that other configurations can be accepted only if a path of the main current flowing from the main current electrode to each of the semiconductor devices can be provided.
- The above mentioned main current electrode is a drain electrode or a source electrode when the semiconductor device is, for example, a MOSFET. It also can be a collector electrode or an emitter electrode when the semiconductor device is, for example, a bipolar transistor. The main current electrode is indirectly connected to each semiconductor device through the substrate, that is, connected to the substrate through a wire to form a current path of the main current flowing from the main current electrode to each semiconductor device through the wire and the substrate.
- Furthermore, the above mentioned drive electrode is a gate electrode when the semiconductor device is, for example, a MOSFET. It can also be a base electrode when the semiconductor device is, for example, a bipolar transistor. Assuming that the semiconductor device is a MOSFET is used, the drive voltage is normally applied to the gate electrode and the source electrode. Therefore, a drive source electrode can be provided in addition to the source electrode for the main current. In this case, the drive source electrode can be regarded also as the above mentioned drive electrode.
- The insulated base does not necessarily indicate an insulating material, but can be accepted only if it insulates the main current electrode from the drive electrode. For example, an insulated base can be obtained by providing an insulating layer on or below a base to insulate the main current electrode from the drive electrode.
- According to the present invention, the main current electrode is provided along the array of the semiconductor devices, and the substrate is connected to the main current electrode through a plurality of wires arranged along the array of the semiconductor devices. The plurality of wires are desired to be equally arranged along the array of the semiconductor devices, but are not limited to this arrangement.
- With the above mentioned configuration, the main current electrode is actually connected to the substrate indirectly through a plurality of wires. However, since the plurality of wires are arranged along the array of the semiconductor devices, the main current electrode is practically connected to the substrate directly on their sides (planes along the array of the semiconductor devices). Therefore, the main current flows substantially straight from the main current electrode to each semiconductor device through the substrate.
- Thus, since the current path of the main current is formed substantially straight from the main current electrode regardless of the position of each semiconductor device, the current path can be the shortest possible, and is leveled. As a result, the inductance can be reduced, and the surge voltage can be suppressed, thereby leveling the main current flowing through each semiconductor device, and increasing the maximum current in the entire semiconductor apparatus (semiconductor module).
- Furthermore, the main current electrode is not actually connected directly to the substrate, but is indirectly connected through wires, thereby suppressing the generation of cracks in the joint portions due to the expansion and contraction of the semiconductor devices.
- Furthermore, an insulated base is mounted on the main current electrode, and the base covers the connection area between the main current electrode and the wire. The drive electrode is mounted on the base having the above mentioned configuration.
- With the above mentioned configuration, the mounting area of the drive electrode on the insulated base can be set close to the semiconductor devices at the position for coverage over the connection area of the wires (that is, such that the mounting area can overlap the connection area of the wires).
- As a result of setting the drive electrode closer to the semiconductor devices, the width of the main current electrode can be smaller, thereby realizing a smaller apparatus. Furthermore, as a result of setting the drive electrode closer to the semiconductor devices, the wire connecting the drive electrode to each semiconductor device can be shorter, and the inductance generated in the wire can be reduced.
- Various types of structures of the base can be designed. For example, it is desired that the side of the semiconductor devices is beveled and the beveled surface covers the connection area.
- FIG. 1 is a plan view of the conventional power semiconductor module;
- FIG. 2 is a plan view of the power semiconductor module after solving the problems with the conventional power semiconductor module;
- FIG. 3 is an enlarged sectional view along B-B shown in FIG. 2;
- FIG. 4 is a plan view of the power semiconductor module according to an embodiment of the present invention;
- FIG. 5 is an enlarged sectional view along C-C shown in2; and
- FIG. 6 is an enlarged sectional view of a variation of the insulated
base 27. - The embodiments of the present invention are described below in detail by referring to the attached drawings.
- Embodiment of the Present Invention
- In the semiconductor module for electric power according to an embodiment of the present invention shown in FIG. 4, an
insulated substrate 22 comprising ceramic insulator, etc. is mounted on abase plate 21 for fixing as in the configuration of the conventional technology shown in FIG. 1. On theinsulated substrate 22, a plurality of (four in FIG. 4) semiconductor devices (semiconductor chips) 24 are mounted in an array through a conductive plate (conductive layer) 23 made of a conductive material such as copper, etc. In this example, thesemiconductor device 24 is a MOSFET having a source electrode and a gate electrode on the top side, and a drain electrode on the reverse side. Theconductive plate 23 is electrically connected commonly to the drain electrode of eachsemiconductor device 24 by mounting thesemiconductor device 24 directly on it. - On the
insulated substrate 22, asource electrode 25 and adrain electrode 26 of the entire module are respectively mounted along the array of thesemiconductor devices 4 and on either side of theconductive plate 23 on which thesemiconductor device 24 are mounted. Furthermore, on thedrain electrode 26, the uniqueinsulated base 27 is mounted, and agate electrode 28 of the entire module is mounted on theinsulated base 27. These electrodes are made of conductive materials such as copper, etc. Theinsulated base 27 is described later in detail. - The
source electrode 25 is electrically connected commonly to the source electrode of eachsemiconductor device 24 through a wire (bonding wire) 29. Agate electrode 28 is electrically connected commonly to the gate electrode of eachsemiconductor device 24 through asimilar wire 30. - The
drain electrode 26 is connected to theconductive plate 23 through a plurality ofwires 31 equally arranged at predetermined distances along the array of thesemiconductor devices 24. Thus, thedrain electrode 26 is commonly connected to eachsemiconductor device 24 through thewire 31 and theconductive plate 23. The length of eachwire 31 is set the shortest possible but long enough to connect theconductive plate 23 to thedrain electrode 26. That is, theconductive plate 23 is connected to thedrain electrode 26 straight (on the plan view) at the shortest possible distance. - Two
drain terminals 32 are led outside the module from thedrain electrode 26. Twosource terminals 33 are led outside from thesource electrode 25. Thedrain terminals 32 and thesource terminals 33 are set opposite each other on either side of theconductive plate 23 which is a mounting area of thesemiconductor devices 24. Agate terminal 34 is led outside from thegate electrode 28. - Although not shown in the attached drawings, the entire module is normally put in a resin package, and the space in the package is filled with gel or epoxy resin, etc. The above mentioned external terminal (drain terminal32,
source terminal 33, and gate terminal 34) is drawn in a two-dimensional array in FIG. 1, but it is appropriately bent and exposed on the top or side of the package. - The insulated
base 27 is described below in detail by referring to FIG. 5 showing an enlarged sectional view through C-C shown in FIG. 4. - The insulated
base 27 is a thick insulating plate of plastic, etc., and is flat on the top surface with the side facing thesemiconductor devices 24 beveled. The beveled side covers the connection area of thewire 31. Using the beveled side, the interference between theinsulated base 27 and thewire 31 can be suppressed although theinsulated base 27 is set exactly close to thesemiconductor device 24. In this case, the thickness of the insulatedbase 27, the angle of the bevel, etc. can be appropriately set in a range in which the interference with thewire 31 can be avoided. - Then, on the
insulated base 27, thegate electrode 28 is set as close as possible to thesemiconductor device 24 so that thegate electrode 28 can cover the connection area of thewire 31. This process can be checked by the plan view shown in FIG. 4. That is, the mounting area of thegate electrode 28 overlaps the connection area of thewire 31. - To produce the semiconductor module having the above mentioned
insulated base 27, thedrain electrode 26 is connected to theconductive plate 23 are connected through thewire 31. Then, after theinsulated base 27 is fixed to a predetermined position on thedrain electrode 26 using, for example, heat-hardening silicon adhesives, etc., thegate electrode 28 is mounted and thewire 30 is connected. - Various methods can be used to set the
insulated base 27 at a predetermined position on thedrain electrode 26. For example, the reverse side of the insulatedbase 27 and the top surface of thedrain electrode 26 are provided with convexity and concavity for coupling through which the insulatedbase 27 can be easily positioned. - The semiconductor module with the above mentioned configuration has a plurality of
semiconductor devices 24 connected in parallel between thedrain terminal 32 and thesource terminal 33. Therefore, in principle, the main current flowing between thedrain terminal 32 and thesource terminal 33 can be controlled by applying a control voltage between thegate terminal 34 and thesource terminal 33, and simultaneously setting allsemiconductor devices 24 ON/OFF. - According to the present embodiment, various problems with the conventional semiconductor module shown in FIG. 1 can be effectively solved as in the semiconductor module shown in FIG. 2.
- That is, since the current path of the main current can be formed substantially straight from the
drain terminal 32 to thesource terminal 33, the current path can be considerably shorter, and leveled entirely. As a result, the inductance can be reduced and the surge voltage can be suppressed, thereby leveling the value of the main current through eachsemiconductor device 24, and increasing the maximum current in the entire module. - Furthermore, since the
drain electrode 26 is indirectly connected to theconductive plate 23 through thewire 31, the conventional cracks can be suppressed although thesemiconductor device 24 repeats expansion and contraction by its heat. - Additionally, by adopting the unique
insulated base 27 according to the present embodiment, thegate electrode 28 can be set as close as possible to thesemiconductor device 24 to cover the connection area of thewire 31. This reduces the width W2 (shown in FIG. 5) of thedrain electrode 26. It is clear as compared with the case of the width W1 of thedrain electrode 12 shown in FIG. 3. Thus, the entire module can be remarkably smaller. - In addition, since the
gate electrode 28 is set close to thesemiconductor device 24, thewire 30 can be shorter, thereby successfully reducing the inductance of thewire 30. - Other Embodiments
- The present invention is not limited to the above mentioned embodiment, but various configurations can be used in the scope disclosed by the claims of the invention. For example, the following variations of the configuration can be adopted.
- (1) In the above mentioned embodiment, one side of the insulated
base 27 is beveled, but the form of the beveled side can be varied as long as it does not interfere with thewire 31. For example, as shown in FIG. 6, theinsulated base 27 can be cut to make a right angle, or cut to make a curve along the curve of thewire 31 as indicated by the dot-and-dash line shown in FIG. 6. - (2) The insulated
base 27 is not necessarily made of a single insulating material, but can be produced by combining a plurality of materials. For example, instead of totally using an insulating material, only a lower or upper area can be made of an insulating plate or layer, and a larger part of the insulatedbase 27 can be made of a conductive material such as metal, etc. It is obvious that the entire structure is made of an insulating material in consideration of the problem of the interference with wires, etc. - (3) In the above mentioned embodiment, the plurality of
wires 31 connecting thedrain electrode 26 to theconductive plate 23 are arranged at predetermined distances. However, they do not necessarily have to be arranged at predetermined distances, but at different distances. - (4) In the above mentioned embodiment, two
drain terminals 32 and twosource terminals 33 are used, but asingle drain terminal 32 and asingle source terminal 33 can be used with an acceptable effect of leveling the current path. Three or more units each can be acceptable. - (5) In the above mentioned embodiment, a plurality of
semiconductor devices 24 are arranged in an array as an example. That is, two or more arrays of the devices can be applied according to the present invention. - (6) The structure of the substrate on which semiconductor devices are mounted is not limited to the configuration shown in the attached drawings. That is, in FIG. 4, the
conductive plate 23 is mounted on theinsulated substrate 22, and thesemiconductor device 24 is mounted on theconductive plate 23. However, according to the present invention, the semiconductor devices can also be mounted directly on the conductive substrate. When such a conductive substrate is adopted, a drain electrode and a source electrode can be mounted on the substrate through an insulating layer. - Furthermore, it is not necessary to mount semiconductor devices and all electrodes on one substrate. That is, the semiconductor device and each electrode can be mounted on different substrates or bases, and then incorporated as a package.
- (7) As an external drive terminal, not only the
gate terminal 34 is led outside, but a source drive terminal can be branched from thesource terminal 33, and be set close to thegate terminal 34. - Otherwise, a source drive electrode is provided on the
insulated base 27 and close to thegate electrode 28, and, from the gate electrode and the source electrode, a gate terminal and a source terminal can be led outside. - (8) Not only one semiconductor module has one transistor function, but a plurality of transistor function can be incorporated into one semiconductor module according to the present invention.
- (9) In the explanation above, a MOSFET is used as a semiconductor device. However, a semiconductor device can be, for example, a bipolar transistor, a thyristor, an IGBT (insulated gate bipolar transistor), a GTO (gate turn-off thyristor), etc.
- As described above, according to the present invention, an electrode wiring structure can be devised to prevent cracks in the structure, and the current path of the main current can be shorter and leveled, thereby reducing the surge voltage, improving the reliability of the apparatus, and increasing the maximum current in the entire apparatus.
- Furthermore, by adopting a unique insulated base, the width of the main current electrode can be shorter. As a result, a smaller apparatus can be realized with reduced inductance.
Claims (9)
1. A semiconductor apparatus, comprising:
a plurality of semiconductor devices mounted in one array or more on a substrate;
a main current electrode mounted along the array(s) of said semiconductor devices, and commonly connected to each of the plurality of semiconductor devices through the substrate by being connected to the substrate through a plurality of wires;
an insulated base mounted on said main current electrode, and covering a connection area of the wires connecting said main current electrode; and
a drive electrode mounted on said base, and commonly connected to each of said semiconductor devices.
2. The apparatus according to , wherein
claim 1
a side of said base facing said semiconductor devices is beveled such that the beveled side can cover the connection area.
3. The apparatus according to , wherein said plurality of wires are arranged along the array(s) of said semiconductor devices at equal or substantially equal distances.
claim 1
4. A semiconductor apparatus, comprising:
a plurality of semiconductor devices mounted in one array or more on a substrate;
a first main current electrode mounted along the array(s) of said semiconductor devices, and commonly connected to each of the plurality of semiconductor devices through the substrate by being connected to the substrate through a plurality of wires;
a second main current electrode mounted along the array(s) of said semiconductor devices opposite said first main current electrode through a mounting area of said semiconductor devices, and commonly connected to each of said plurality of semiconductor devices;
an insulated base mounted on said first main current electrode and covering a connection area of the wires connecting said first main current electrode; and
a drive electrode mounted on said base, and commonly connected to each of said semiconductor devices.
5. The apparatus according to , wherein
claim 4
a side of said base facing said semiconductor devices is beveled such that the beveled side can cover the connection area.
6. The apparatus according to , wherein
claim 4
said plurality of wires are arranged along the array(s) of said semiconductor devices at equal or substantially equal distances.
7. The apparatus according to , wherein
claim 6
said wires are shortest possible but long enough to connect said substrate to said first main current electrode.
8. The apparatus according to , wherein
claim 6
a first external terminal led outside from said first main current electrode and a second external terminal led outside from said second main current electrode are set opposite each other with the mounting area of said semiconductor devices between said terminals.
9. The apparatus according to , wherein
claim 4
said semiconductor device is a MOSFET (metal oxide semiconductor field-effect transistor), and said first and second main current electrodes are a drain electrode and a source electrode of the MOSFET, and said drive electrode is a gate electrode of the MOSFET.
Applications Claiming Priority (2)
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JP2000-120965 | 2000-04-21 | ||
JP2000120965A JP2001308265A (en) | 2000-04-21 | 2000-04-21 | Semiconductor device |
Publications (2)
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US20010050421A1 true US20010050421A1 (en) | 2001-12-13 |
US6459146B2 US6459146B2 (en) | 2002-10-01 |
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US09/836,939 Expired - Fee Related US6459146B2 (en) | 2000-04-21 | 2001-04-18 | Semiconductor apparatus |
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US (1) | US6459146B2 (en) |
JP (1) | JP2001308265A (en) |
DE (1) | DE10119502B4 (en) |
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EP1378941A2 (en) * | 2002-07-03 | 2004-01-07 | Hitachi, Ltd. | Semiconductor module and power conversion device |
US20040195985A1 (en) * | 2003-04-02 | 2004-10-07 | Wolfgang Hill | Power stage for driving an electric machine |
WO2007046031A2 (en) * | 2005-10-19 | 2007-04-26 | Nxp B.V. | Device comprising an element with electrodes coupled to connections |
US20070252169A1 (en) * | 2006-04-27 | 2007-11-01 | Hitachi, Ltd. | Electric Circuit Device, Electric Circuit Module, and Power Converter |
EP3654373A1 (en) * | 2018-11-19 | 2020-05-20 | Infineon Technologies AG | Multi-chip-package |
CN113097154A (en) * | 2021-03-22 | 2021-07-09 | 西安交通大学 | Bidirectional switch power module and preparation method thereof |
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KR100442609B1 (en) * | 2002-03-05 | 2004-08-02 | 삼성전자주식회사 | Structure of flip chip bonding and method for bonding |
DE10331574A1 (en) * | 2003-07-11 | 2005-02-17 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH | The power semiconductor module |
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JP5685880B2 (en) * | 2010-10-15 | 2015-03-18 | トヨタ自動車株式会社 | Wire bond bonding structure |
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US20040195985A1 (en) * | 2003-04-02 | 2004-10-07 | Wolfgang Hill | Power stage for driving an electric machine |
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WO2007046031A2 (en) * | 2005-10-19 | 2007-04-26 | Nxp B.V. | Device comprising an element with electrodes coupled to connections |
WO2007046031A3 (en) * | 2005-10-19 | 2007-10-18 | Nxp Bv | Device comprising an element with electrodes coupled to connections |
US20080278241A1 (en) * | 2005-10-19 | 2008-11-13 | Nxp B.V. | Device Comprising an Element with Electrodes Coupled to Connections |
US20070252169A1 (en) * | 2006-04-27 | 2007-11-01 | Hitachi, Ltd. | Electric Circuit Device, Electric Circuit Module, and Power Converter |
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US8081472B2 (en) * | 2006-04-27 | 2011-12-20 | Hitachi, Ltd. | Electric circuit device, electric circuit module, and power converter |
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US8743548B2 (en) | 2006-04-27 | 2014-06-03 | Hitachi, Ltd. | Electric circuit device, electric circuit module, and power converter |
US9307666B2 (en) | 2006-04-27 | 2016-04-05 | Hitachi, Ltd. | Electric circuit device, electric circuit module, and power converter |
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CN113097154A (en) * | 2021-03-22 | 2021-07-09 | 西安交通大学 | Bidirectional switch power module and preparation method thereof |
Also Published As
Publication number | Publication date |
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DE10119502A1 (en) | 2001-10-31 |
US6459146B2 (en) | 2002-10-01 |
DE10119502B4 (en) | 2009-08-06 |
JP2001308265A (en) | 2001-11-02 |
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