US20010041522A1 - Fluid-pressure regulated wafer polishing head - Google Patents

Fluid-pressure regulated wafer polishing head Download PDF

Info

Publication number
US20010041522A1
US20010041522A1 US09/892,143 US89214301A US2001041522A1 US 20010041522 A1 US20010041522 A1 US 20010041522A1 US 89214301 A US89214301 A US 89214301A US 2001041522 A1 US2001041522 A1 US 2001041522A1
Authority
US
United States
Prior art keywords
wafer
polishing
backing member
polishing head
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
US09/892,143
Other versions
US6443824B2 (en
Inventor
Norman Shendon
Michael Sherwood
Harry Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to US09/892,143 priority Critical patent/US6443824B2/en
Publication of US20010041522A1 publication Critical patent/US20010041522A1/en
Priority to US10/117,892 priority patent/US6716094B2/en
Priority to US10/201,428 priority patent/US6652368B2/en
Application granted granted Critical
Publication of US6443824B2 publication Critical patent/US6443824B2/en
Priority to US10/688,663 priority patent/US7101261B2/en
Priority to US11/400,763 priority patent/USRE44491E1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/27Work carriers
    • B24B37/30Work carriers for single side lapping of plane surfaces
    • B24B37/32Retaining rings

Definitions

  • This invention relates generally to mechanical polishing, and in particular to polishing heads used to polish generally circular semiconductor wafers in the semiconductor industry.
  • This invention provides improved construction and easier operability of polishing heads useful for positioning a substrate, in particular, a semiconductor substrate, on the surface of a polishing pad.
  • Such heads also provide a controllable biasing, or loading, between the surface of the substrate and the polishing surface.
  • a typical substrate polishing apparatus positions a surface of a substrate against a polishing surface. Such a polishing configuration is useful for polishing the substrate after it has been sliced from a boule (single crystal), to provide smoothly planar, parallel, front and back sides thereon. It is also useful for polishing a surface of the substrate on which one or more film layers have been deposited, where polishing is used to planarize the surface of the substrate on which one or more film layers have been deposited.
  • a slurry having both chemically reactive and abrasive components is used in conjunction with the positioning of the film layer surface against a moving polishing surface to provide the desired polishing. This is known as chemical mechanical polishing.
  • a typical wafer polishing apparatus employs a carrier, or polishing head, to hold the substrate and position the film layer surface of the substrate against a polishing surface.
  • the polishing surface is typically provided by placing a large polishing pad, typically as large as one meter in diameter, on a massive rotatable platen. The platen is driven by a motor to rotate the polishing pad and thus provide relative motion between the pad and the film layer surface of the substrate. As the pad rotates, it tends to pull the substrate out of the carrier. Therefore, the carrier also typically includes a recess within which the substrate is received. This recess is commonly provided by extending a retainer downwardly from the substrate receiving surface of the carrier positioned adjacent to, and extending circumferentially around, the edge of the substrate.
  • the apparatus also provides a means for positioning the carrier over the polishing pad and biasing the carrier towards the pad to load the substrate against the pad, and a drive means for providing rotational, vibratory or oscillatory motion to the carrier.
  • the force urging the retaining ring toward the polishing pad is dependent on the predetermined spring constant of a circular leaf spring and its compression.
  • the spring-loaded retaining rings are subject to bending and torsional deflection due to the spring configuration which does not provide a continuous contact force but provides a series of point loads, clamping the ring to the polishing pad.
  • the retaining ring bends and deflects because it is allowed to flex between these point loads. This flexing can cause variation in the clearance between the ring and pad which affects the depth of slurry that passes under the ring, and it also affects the pad compression adjacent to the edge of the wafer. Variations in the depth of polishing slurry and in pad compression adjacent to the edge of the wafer can cause differential polishing of the wafer to the detriment of polishing uniformity.
  • each head configuration is to provide a fixture which will uniformly polish the wafer across its full width without unacceptable variations in the thickness of the wafer.
  • These prior art configurations as described can introduce polishing variations due to bladder edge effects, non-uniformly distributed force pressing the wafer to the polishing pad, and retaining ring deflections which require close and frequent monitoring to assure satisfactory polishing results.
  • This invention relates to a polishing head substrate (wafer) backing member facing the back of, and being sealed to, a substrate (wafer) being polished.
  • the wafer is sealed to a cavity located in the member around the perimeter of the cavity and a fluid (preferably gas although it may be a liquid) pressurizes the cavity and the back of the waft against a slurry containing polishing pad.
  • the wafer backing member preferably includes a seal feature, e.g. an O-ring, lip seal, or other seal member which extends from the backing member adjacent to the perimeter of the backing member to form a recess between the wafer and the member to hold a fluid or gas in the recess behind the wafer to provide a uniform pressure across the surface of the wafer being pressed against the polishing pad.
  • a gas tight bellows chamber supports the wafer backing member and urges it toward the polishing pad to provide primary loading of the substrate against the pad. When the bellows is pressurized to urge the substrate against the polishing pad, it compresses the seal. Simultaneously, the pressure in the cavity formed by the seal may be changed, to selectively vary the polishing of the substrate.
  • the cavity may be evacuated, to urge the center of the substrate away from the pad to increase polishing at the substrate edge as compared to its center, and it may be pressurized to enable uniform loading of the substrate against the pad.
  • the pressure in the cavity urges the substrate away from the holding member, and thereby decompresses the seal.
  • the pressure in the cavity may be sufficiently large to separate the substrate from the seal, at which point the cavity pressure will release, or “blow-by,” through the resulting gap between the substrate and the seal.
  • a retractable and pressure extendable retaining ring assembly extends around the backing member and prevents the wafer from sliding out from below the surface of the substrate backing member.
  • An annular ring extending bladder extends along the backside of the ring, the bladder when pressurized urges the ring against the pad. The force with which the retaining ring is clamped to the polishing pad is dependant on the gas pressure maintained in this bladder.
  • inventive configurations alone or in combination, provide several advantages.
  • One advantage is direct control of a uniform force on the back surface of the wafer being polished within the perimeter of the seal extending between the holding member and the wafer.
  • a pressure is uniformly maintained without the complication or edge effects of an intermediate bladder in direct contact with the substrate.
  • Another advantage is that the total force pressing the wafer backing member toward the wafer is controlled separately by the force created by controlling the pressure within the bellows completely independent of the influence of the pressure cavity formed between the wafer and the backing member.
  • the pressure within the wafer facing cavity controls the distribution pattern by which this total force is transmitted from the wafer backing member to the wafer.
  • Providing a vacuum to the cavity can cause the center of a supported wafer to bow inward, so that only a perimeter polishing contact is achieved.
  • positive pressure in excess of the seal contact pressure will cause the wafer to lift off (move away from) the seal and for gas to blow-by (it cannot cause outward bowing of the substrate as the pressure at the center of the substrate can never exceed the pressure at the perimeter of the substrate), and will also cause a uniform pressure on the back of the wafer.
  • the bowing or deflection of the wafer, if any, is controlled and limited by the pressure on the perimeter seal, so long as the internal pressure of the recess or cavity facing the wafer does not exceed the seal pressure and cause seal blow-by.
  • This configuration according to the invention nearly guarantees that, as long as the force provided by the backing pressure urging the wafer from the seal is maintained at or slightly below the pressure on the seal provided by the bellows, the force clamping the wafer to the polishing pad for polishing will be uniform across the area of the wafer.
  • the pressure in the wafer facing cavity will be slightly less than the pressure at which seal blow-by occurs. Under these conditions, a slightly greater pressure will be present between the substrate and the pad at the seal location which will slightly increase the polishing (material removed) in the perimeter ring (seal) area.
  • the outer three millimeters of the substrate are considered to be a non-usable handling margin and therefore slight additional polishing (material removed) in this narrow band at the edge of the substrate is not considered deleterious.
  • the extension and retraction of the wafer retaining ring assembly is independently controlled by the use of the continuous annular bladder positioned around the perimeter of the wafer backing member.
  • Such a configuration can eliminate the pressure variations associated with the point contacts of springs provided to urge the ring into contact with the pad.
  • one or more restoring springs are supported on a rigid portion of the retaining ring backing ring to cause the retaining ring to retract from its lowered position when the extension bladder is depressurized.
  • the frictional force between the seal at the perimeter of the wafer backing member is sufficient such that when the polishing head is rotated during polishing while the wafer is in contact with the polishing slurry on the polishing pad, there is sufficient frictional force that the wafer rotates with the polishing head and overcomes the resistance to rotation with the head due to the motion of the pad and the polishing media on the polishing pad.
  • FIG. 1 shows a cross section of an embodiment according to the invention
  • FIG. 2 is a close up view of the right side of FIG. 1 showing the periphery of the wafer backing member with an O-ring seal;
  • FIG. 3 is a close up view of the right side of FIG. 1 showing the periphery of the wafer backing member with a lip seal.
  • FIG. 1 shows a polishing head assembly 100 in a configuration according to the invention.
  • the polishing head 100 includes a polishing head housing support plate 102 which is integral with its rod or stem support member. This support plate 102 is generally circular so as to match the circular configuration of the substrate or wafer 142 to be polished.
  • a polishing head housing descending wall 104 is attached to the bottom of the support plate 102 by a descending wall top flange 106 .
  • the descending wall 104 includes a lower lip 110 which curves inward toward the wafer 142 .
  • the descending wall 104 encloses a wafer perimeter retaining ring assembly 146 enclosing a wafer backing member 124 .
  • the wafer backing member 124 is attached to the support plate 102 by a bellows 118 which allows a vertically variable vacuum seal.
  • the bellows 118 encloses, a bellows chamber 120 .
  • the bellows chamber 120 can be pressurized positively or negatively through a gas passage 112 to which is connected the inside of the bellows.
  • One typical substrate polishing apparatus generally includes a large rotating polishing pad, typically larger than, and more typically several times larger than, the surface area of the substrate being polished. Also included is a polishing head within which the substrate is mounted for positioning a surface of the substrate against the polishing surface.
  • the head is typically supported over the pad, and fixed relative to the surface of the pad, by a support member.
  • This support member provides a fixed bearing location from which head may extend, to provide a desired unit loading of the substrate against the pad.
  • Loading means to enable this loading of the substrate against the polishing pad include hydraulic and pneumatic pistons which extend between the polishing head 100 and the support member (not shown).
  • the polishing head 100 will also typically be rotatable, which enables rotation of the substrate on the pad.
  • the pad is typically rotated, to provide a constantly changing surface of the pad against the substrate. This rotation is typically provided by separate electric motors (not shown) coupled to the head and a polishing platen on which the pad is received.
  • the polishing head 100 of the present invention provides a mechanism to position and to uniformly load the surface of the wafer 142 against a polishing pad 182 located in a stationary or rotating polishing bed 180 .
  • the polishing head 100 can be considered to comprise three systems: a loading member which supplies the downward loading of the wafer against the polishing surface; a mounting portion which allows a uniform pattern loading of the wafer against the polishing surface; and a retaining assembly which ensures that the wafer will not slip out from beneath the mounting portion during polishing operations.
  • a loading member which supplies the downward loading of the wafer against the polishing surface
  • a mounting portion which allows a uniform pattern loading of the wafer against the polishing surface
  • a retaining assembly which ensures that the wafer will not slip out from beneath the mounting portion during polishing operations.
  • the loading member generally comprises the bellows 118 and the bellows chamber 120 provided by the attachment of the bellows to the upper surface of the backing member 124 and the interior surface of the support plate 102 .
  • the bellows chamber 120 By pressurizing the bellows chamber 120 , force is exerted on the backing member 124 , and thus on the wafer 142 , to load the wafer 142 against the polishing surface of the polishing pad 182 .
  • the mounting portion includes a separate sealed pocket 123 , one wall of which is firmed by the wafer, to provide an even, hydrostatic, loading across the backside of the wafer.
  • the retaining ring assembly 146 includes an extendable retainer 162 which circumscribes the wafer 142 .
  • the backing member 124 includes a wafer facing recess 126 .
  • the perimeter of the backing member 124 is configured to receive an edge seal feature 130 , e.g., an O-ring (not shown in the empty O-ring groove of FIG. 2) or other type of seal.
  • the edge seal 130 is located and configured to engage the perimeter portion of the backside of the wafer 142 and thereby form, in combination with the recess 126 , a pressurizable pocket 123 .
  • the pocket includes the recess 126 and the area within the seal 130 over the backside of the wafer.
  • Gas or other fluid (preferably an inert gas) is supplied to or evacuated from the pocket through a gas passage 125 which is connected through a hose 122 coiled inside the bellows 118 and supplied from a gas line 114 .
  • the selective pressurization of the pocket 123 and the bellows chamber 120 provides the loading of the wafer on the polishing pad 182 .
  • the bellows enables the backing member 124 , and thus the wafer 142 , to move rotationally with respect to the support plate 102 and in the x, y, and z directions during polishing.
  • the bellows 118 in combination with the upper surface of the backing member 124 , the lower surface of the support plate 102 and a pressure source (not shown), provide the loading member.
  • the pressure in the bellows chamber 120 is controlled to be constant and the flexibility of the bellows 118 accommodates misalignments or changes in clearance between the backing member 124 and the surface of the polishing pad 182 .
  • the pressure in the bellows chamber 120 is selected to provide the desired loading of the wafer 142 against the polishing pad 182 . In this configuration, the pressure in the bellows chamber 120 provides a regulatable uniform force pressing the backing member 124 toward the surface of the polishing pad 182 regardless of the extension of the bellows 118 .
  • pressurizing the recess 126 behind the wafer 142 enables a uniform contact pressure to exist between the polishing pad 182 and the wafer 142 across the entire surface of the wafer contacting the polishing pad 182 .
  • the extension or retraction of the bellows 118 is controlled by pressurizing or depressurizing the bellows chamber 120 via the gas passage 112 .
  • the pressurization or depressurization of the recess 126 in the backing member 124 either pressurizes or depressurized the pocket 123 .
  • a negative differential pressure due to vacuum bends the wafer 142 upwardly.
  • a sufficient positive pressure creates a separating force greater than the force from the bellows 118 which forces the seal wafer.
  • the polishing head configuration of FIG. 1 also overcomes the comparative difficulty encountered in prior art head designs when loading and unloading the wafer from the head, and in ensuring that the wafer does not slip from beneath the backing member 124 .
  • the pressure maintained in the pocket may be changed to provide a super-atmospheric pressure to separate the wafer from the carrier when polishing is completed, and to provide a vacuum pressure (preferably of up to approximately 100 torr less than atmospheric pressure) behind the wafer thereby causing atmospheric pressure to maintain the wafer on the head as the head is loaded onto the polishing pad 182 .
  • the wafer When the wafer is attached to the backing member 124 by maintaining a vacuum in the pocket, the wafer may deflect inwardly toward the recess 126 .
  • the recess 126 is sufficiently shallow that the total possible deflection of the wafer into the recess, when considered in combination with the span of the wafer 142 across the recess 126 , will impose stresses in the wafer 142 which are less than the strength or yield limits of the wafer material.
  • the vacuum need be maintained in the pocket only during the period of time that the polishing head is removed from the polishing pad 182 .
  • the pressure in the pocket is increased, until a pressure above atmospheric pressure is maintained therein.
  • the pressure in the bellows chamber 120 is increased, to provide a load force to load the wafer 142 against the polishing pad 182 .
  • the pressure in the bellows chamber 120 As the pressure in the bellows chamber 120 is increased, it loads the seal 130 received in the backing member 124 into contact with the backside of the wafer. The seal will compress under this load, which will enhance the sealing characteristics of the seal 130 . Therefore, as the pressure in the bellows chamber 120 increases, the threshold pressure at which gas maintained in the pocket 123 will leak past, or “blow-by”, the seal 130 , also increases. Blow-by occurs when the head and the seal lift off the wafer. This condition occurs when the pressure in the pocket, when multiplied by the surface area of the wafer 142 circumscribed by the seal 130 , exceeds the load force on the seal-wafer interface. In the configuration of the head, as shown in FIG. 3, the area of the backing member 124 which is circumscribed by the bellows 118 is smaller than the area of the wafer 142 circumscribed by the seal 130 . Therefore, the pressure in the bellows cavity must exceed the pressure maintained in the pocket to prevent blow-by.
  • the pressure maintained in the pocket is approximately 75 torr less than the threshold at which blow-by will occur.
  • the entire backside of the wafer, less a very small annular area outward of the seal 130 will have a uniform pressure on the back surface thereof which ensures that the front surface of the wafer is uniformly loaded against the polishing pad 182 .
  • higher pressures including a pressure at or above blow-by, may be used. Where such higher pressures are used, the seal-wafer interface will serve as a relief valve, and blow-by will occur periodically to maintain a desired pressure within the pocket 123 .
  • FIG. 2 shows a close up of the right side of the polishing head of FIG. 1.
  • the seal 130 in this configuration is an O-ring 134 located in an O-ring groove 132 (i.e., collectively: an annular extending portion). This seal is located at the perimeter of the wafer 142 surrounding the recess 126 (and the associated pocket).
  • the perimeter of the backing member 124 is surrounded by the retaining ring assembly 146 .
  • the retaining ring includes a the retaining ring 162 which is attached to the backing ring 148 .
  • a series of compression springs 172 i.e., first set of elastic members support the backing ring 148 on the lip 110 of the descending wall 104 .
  • An expandable retaining ring extending bladder 170 can be pressurized through gas supply passage 171 (i.e., a second set of elastic members).
  • gas supply passage 171 i.e., a second set of elastic members.
  • the retaining ring assembly 146 is extended to a location adjacent the wafer 142 as shown by the dashed lines 146 a in FIG. 2.
  • FIG. 3 A second configuration of the polishing head of the present invention is shown in FIG. 3, wherein the seal 130 is a downwardly extending lip seal 136 received on the outer perimeter of the backing member 124 , and secured thereon by a backing ring 138 extending about the outer circumference of the lip seal 36 .
  • the lip seal 136 is preferably a thin, elastic, member having a rectangular cross section. A portion of the lip seal 136 extends from the underside, or wafer engaging side, of the backing member 124 , to engage the upper surface of the wafer 142 immediately inwardly of the perimeter of the wafer 142 .
  • the engagement of the lip seal 136 with the wafer forms a pocket (including wafer recess 126 and a shoulder area inside lip seal) which may be evacuated or pressurized.
  • the lip seal 136 and the O-ring 134 provide sufficient contact between the surface of the substrate and the surface of the seal to create a rotational force due to friction between the two to keep them in contact so that the substrate turns with the polishing head.
  • the polishing head 100 also includes a retaining ring assembly 146 to ensure that the wafer 142 does not slip out from beneath the head during polishing operations.
  • the retaining ring 162 has through holes 164 and counterbores 166 therein (FIG. 3). Retaining ring screws 168 are placed therethrough and threaded into a series of backing-ring bottom-surface threaded holes 160 to hold the retaining ring 162 to a backing ring 148 .
  • the retaining ring 162 is preferable made of Delrin or similar plastic material.
  • the backing ring 148 is preferably made of aluminum as are all of the other metal pieces except for the bellows which is stainless steel.
  • the backing ring 148 has a bottom surface 158 facing the retaining ring 162 .
  • the backing ring 148 includes an outside flange 152 having a top face 154 facing the bladder 170 and a bottom face 156 facing the series of compression springs 172 .
  • the backing ring 148 has an inside flange 150 having a lower face 151 which extends inwardly over the diameter of the retaining member 124 a such that when the backing member 124 a is raised beyond a certain point the backing ring assembly 146 also rises.
  • FIGS. 2 and 3 show details of the retaining ring assembly 146 .
  • the backing ring 148 is urged upwardly away from the lip 110 of the descending wall 104 by a plurality of (for example 6 - 12 ) compression springs 172 .
  • the bladder 170 is pressurized to extend the retaining ring assembly 146 to its operating position as shown by the dashed lines 146 a in FIG. 2, the retaining ring 162 surrounds the edge of the wafer being polished. This prevents the wafer from sliding out under the wafer backing member 124 , or 124 a .
  • Inflation of the bladder 170 through the gas passage 171 provides a downward force to oppose the compression springs 172 and forces the retaining ring 162 toward and possibly against the polishing pad 182 .
  • a continuous continuously pressurized bladder could be employed to replace the series of springs 172 to provide uniformly distributed retracting forces.
  • the lower surface 151 of the backing ring inside flange 150 is configured so that as the plastic Delrin material of the wafer perimeter retaining ring 162 wears away, the travel of retaining ring is limited by the interference between the lower surface 151 of the upper flange 150 and the top of the wafer backing member 124 a so that the head of the retaining ring retaining screws 168 cannot touch the polishing pad. This prevents the heads of retaining screws 168 from coming in contact with the polishing pad and introducing undesirable contaminants.
  • the perimeter retaining ring can also be mounted without screws, such as by use of key slots requiring insertion and partial rotation to retain the key and opposing grooves having O-rings sized to engage and span the space between grooves.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

A wafer polishing head utilizes a wafer backing member having a wafer facing pocket which is sealed against the wafer and is pressurized with air or other fluid to provide a uniform force distribution pattern across the width of the wafer inside an edge seal feature at the perimeter of the wafer to urge (or press) the wafer uniformly toward a polishing pad. Wafer polishing is carried out uniformly without variations in the amount of wafer material across the usable area of the wafer. A frictional force between the seal feature of the backing member and the surface of the wafer transfers rotational movement of the head to the wafer during polishing. A pressure controlled bellows supports and presses the wafer backing member toward the polishing pad and accommodates any dimensional variation between the polishing head and the polishing pad as the polishing head is moved relative to the polishing pad. An integral, but independently retractable and extendable retaining ring assembly is provided around the wafer backing member and wafer to uniformly and independently control the pressure of a wafer perimeter retaining ring on the polishing ad of a wafer polishing bed.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • This application is a continuation of U.S. application Ser. No. 09/406,027, filed Sep. 27, 1999, which is a continuation of U.S. application Ser. No. 08/488,927, filed Jun. 9, 1995, now U.S. Pat. No. 6,024,630, the entirety of which is incorporated herein by reference.[0001]
  • FIELD OF INVENTION
  • This invention relates generally to mechanical polishing, and in particular to polishing heads used to polish generally circular semiconductor wafers in the semiconductor industry. [0002]
  • BACKGROUND OF THE INVENTION
  • This invention provides improved construction and easier operability of polishing heads useful for positioning a substrate, in particular, a semiconductor substrate, on the surface of a polishing pad. Such heads also provide a controllable biasing, or loading, between the surface of the substrate and the polishing surface. [0003]
  • A typical substrate polishing apparatus positions a surface of a substrate against a polishing surface. Such a polishing configuration is useful for polishing the substrate after it has been sliced from a boule (single crystal), to provide smoothly planar, parallel, front and back sides thereon. It is also useful for polishing a surface of the substrate on which one or more film layers have been deposited, where polishing is used to planarize the surface of the substrate on which one or more film layers have been deposited. A slurry having both chemically reactive and abrasive components is used in conjunction with the positioning of the film layer surface against a moving polishing surface to provide the desired polishing. This is known as chemical mechanical polishing. [0004]
  • A typical wafer polishing apparatus employs a carrier, or polishing head, to hold the substrate and position the film layer surface of the substrate against a polishing surface. The polishing surface is typically provided by placing a large polishing pad, typically as large as one meter in diameter, on a massive rotatable platen. The platen is driven by a motor to rotate the polishing pad and thus provide relative motion between the pad and the film layer surface of the substrate. As the pad rotates, it tends to pull the substrate out of the carrier. Therefore, the carrier also typically includes a recess within which the substrate is received. This recess is commonly provided by extending a retainer downwardly from the substrate receiving surface of the carrier positioned adjacent to, and extending circumferentially around, the edge of the substrate. The apparatus also provides a means for positioning the carrier over the polishing pad and biasing the carrier towards the pad to load the substrate against the pad, and a drive means for providing rotational, vibratory or oscillatory motion to the carrier. [0005]
  • An example of a polishing head having a retaining ring is shown in U.S. Pat. No. 5,205,082, by Shendon et al. which discloses pressurized diaphragm arrangement which urges a wafer carrier and wafer retainer toward a polishing pad. [0006]
  • In some carrier head configurations, the force urging the retaining ring toward the polishing pad is dependent on the predetermined spring constant of a circular leaf spring and its compression. The spring-loaded retaining rings are subject to bending and torsional deflection due to the spring configuration which does not provide a continuous contact force but provides a series of point loads, clamping the ring to the polishing pad. The retaining ring bends and deflects because it is allowed to flex between these point loads. This flexing can cause variation in the clearance between the ring and pad which affects the depth of slurry that passes under the ring, and it also affects the pad compression adjacent to the edge of the wafer. Variations in the depth of polishing slurry and in pad compression adjacent to the edge of the wafer can cause differential polishing of the wafer to the detriment of polishing uniformity. [0007]
  • The object in each head configuration is to provide a fixture which will uniformly polish the wafer across its full width without unacceptable variations in the thickness of the wafer. These prior art configurations as described can introduce polishing variations due to bladder edge effects, non-uniformly distributed force pressing the wafer to the polishing pad, and retaining ring deflections which require close and frequent monitoring to assure satisfactory polishing results. [0008]
  • SUMMARY OF THE INVENTION
  • This invention relates to a polishing head substrate (wafer) backing member facing the back of, and being sealed to, a substrate (wafer) being polished. The wafer is sealed to a cavity located in the member around the perimeter of the cavity and a fluid (preferably gas although it may be a liquid) pressurizes the cavity and the back of the waft against a slurry containing polishing pad. [0009]
  • The wafer backing member preferably includes a seal feature, e.g. an O-ring, lip seal, or other seal member which extends from the backing member adjacent to the perimeter of the backing member to form a recess between the wafer and the member to hold a fluid or gas in the recess behind the wafer to provide a uniform pressure across the surface of the wafer being pressed against the polishing pad. A gas tight bellows chamber supports the wafer backing member and urges it toward the polishing pad to provide primary loading of the substrate against the pad. When the bellows is pressurized to urge the substrate against the polishing pad, it compresses the seal. Simultaneously, the pressure in the cavity formed by the seal may be changed, to selectively vary the polishing of the substrate. The cavity may be evacuated, to urge the center of the substrate away from the pad to increase polishing at the substrate edge as compared to its center, and it may be pressurized to enable uniform loading of the substrate against the pad. The pressure in the cavity urges the substrate away from the holding member, and thereby decompresses the seal. The pressure in the cavity may be sufficiently large to separate the substrate from the seal, at which point the cavity pressure will release, or “blow-by,” through the resulting gap between the substrate and the seal. [0010]
  • In a further aspect of the invention, a retractable and pressure extendable retaining ring assembly extends around the backing member and prevents the wafer from sliding out from below the surface of the substrate backing member. An annular ring extending bladder extends along the backside of the ring, the bladder when pressurized urges the ring against the pad. The force with which the retaining ring is clamped to the polishing pad is dependant on the gas pressure maintained in this bladder. [0011]
  • These inventive configurations, alone or in combination, provide several advantages. One advantage is direct control of a uniform force on the back surface of the wafer being polished within the perimeter of the seal extending between the holding member and the wafer. A pressure is uniformly maintained without the complication or edge effects of an intermediate bladder in direct contact with the substrate. Another advantage is that the total force pressing the wafer backing member toward the wafer is controlled separately by the force created by controlling the pressure within the bellows completely independent of the influence of the pressure cavity formed between the wafer and the backing member. If the force on the wafer due to the pressure behind the wafer in the wafer facing cavity exceeds the force on the seal to the wafer exerted by the pressure in the bellows then the wafer will lift away from its seal and seal blow-by will occur until equilibrium restores the seal. [0012]
  • The pressure within the wafer facing cavity controls the distribution pattern by which this total force is transmitted from the wafer backing member to the wafer. Providing a vacuum to the cavity can cause the center of a supported wafer to bow inward, so that only a perimeter polishing contact is achieved. In contrast, positive pressure in excess of the seal contact pressure will cause the wafer to lift off (move away from) the seal and for gas to blow-by (it cannot cause outward bowing of the substrate as the pressure at the center of the substrate can never exceed the pressure at the perimeter of the substrate), and will also cause a uniform pressure on the back of the wafer. The bowing or deflection of the wafer, if any, is controlled and limited by the pressure on the perimeter seal, so long as the internal pressure of the recess or cavity facing the wafer does not exceed the seal pressure and cause seal blow-by. [0013]
  • This configuration according to the invention nearly guarantees that, as long as the force provided by the backing pressure urging the wafer from the seal is maintained at or slightly below the pressure on the seal provided by the bellows, the force clamping the wafer to the polishing pad for polishing will be uniform across the area of the wafer. In reality, because it is desired to maintain a gas tight perimeter seal, in operation the pressure in the wafer facing cavity will be slightly less than the pressure at which seal blow-by occurs. Under these conditions, a slightly greater pressure will be present between the substrate and the pad at the seal location which will slightly increase the polishing (material removed) in the perimeter ring (seal) area. However, the outer three millimeters of the substrate are considered to be a non-usable handling margin and therefore slight additional polishing (material removed) in this narrow band at the edge of the substrate is not considered deleterious. [0014]
  • The extension and retraction of the wafer retaining ring assembly is independently controlled by the use of the continuous annular bladder positioned around the perimeter of the wafer backing member. Such a configuration can eliminate the pressure variations associated with the point contacts of springs provided to urge the ring into contact with the pad. In one configuration, one or more restoring springs are supported on a rigid portion of the retaining ring backing ring to cause the retaining ring to retract from its lowered position when the extension bladder is depressurized. [0015]
  • The frictional force between the seal at the perimeter of the wafer backing member is sufficient such that when the polishing head is rotated during polishing while the wafer is in contact with the polishing slurry on the polishing pad, there is sufficient frictional force that the wafer rotates with the polishing head and overcomes the resistance to rotation with the head due to the motion of the pad and the polishing media on the polishing pad.[0016]
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 shows a cross section of an embodiment according to the invention; [0017]
  • FIG. 2 is a close up view of the right side of FIG. 1 showing the periphery of the wafer backing member with an O-ring seal; and [0018]
  • FIG. 3 is a close up view of the right side of FIG. 1 showing the periphery of the wafer backing member with a lip seal.[0019]
  • DETAILED DESCRIPTION
  • FIG. 1 shows a polishing [0020] head assembly 100 in a configuration according to the invention. The polishing head 100 includes a polishing head housing support plate 102 which is integral with its rod or stem support member. This support plate 102 is generally circular so as to match the circular configuration of the substrate or wafer 142 to be polished. A polishing head housing descending wall 104 is attached to the bottom of the support plate 102 by a descending wall top flange 106. The descending wall 104 includes a lower lip 110 which curves inward toward the wafer 142. The descending wall 104 encloses a wafer perimeter retaining ring assembly 146 enclosing a wafer backing member 124. The wafer backing member 124 is attached to the support plate 102 by a bellows 118 which allows a vertically variable vacuum seal. The bellows 118 encloses, a bellows chamber 120. The bellows chamber 120 can be pressurized positively or negatively through a gas passage 112 to which is connected the inside of the bellows.
  • An Overview of the Apparatus
  • One typical substrate polishing apparatus generally includes a large rotating polishing pad, typically larger than, and more typically several times larger than, the surface area of the substrate being polished. Also included is a polishing head within which the substrate is mounted for positioning a surface of the substrate against the polishing surface. The head is typically supported over the pad, and fixed relative to the surface of the pad, by a support member. This support member provides a fixed bearing location from which head may extend, to provide a desired unit loading of the substrate against the pad. Loading means to enable this loading of the substrate against the polishing pad include hydraulic and pneumatic pistons which extend between the polishing [0021] head 100 and the support member (not shown). Additionally, the polishing head 100 will also typically be rotatable, which enables rotation of the substrate on the pad. Likewise, the pad is typically rotated, to provide a constantly changing surface of the pad against the substrate. This rotation is typically provided by separate electric motors (not shown) coupled to the head and a polishing platen on which the pad is received.
  • The polishing [0022] head 100 of the present invention provides a mechanism to position and to uniformly load the surface of the wafer 142 against a polishing pad 182 located in a stationary or rotating polishing bed 180. Generally, the polishing head 100 can be considered to comprise three systems: a loading member which supplies the downward loading of the wafer against the polishing surface; a mounting portion which allows a uniform pattern loading of the wafer against the polishing surface; and a retaining assembly which ensures that the wafer will not slip out from beneath the mounting portion during polishing operations. Each of these three members or systems provide improvements in polishing head designs, and may be used independently or in combination.
  • The loading member generally comprises the [0023] bellows 118 and the bellows chamber 120 provided by the attachment of the bellows to the upper surface of the backing member 124 and the interior surface of the support plate 102. By pressurizing the bellows chamber 120, force is exerted on the backing member 124, and thus on the wafer 142, to load the wafer 142 against the polishing surface of the polishing pad 182. The mounting portion includes a separate sealed pocket 123, one wall of which is firmed by the wafer, to provide an even, hydrostatic, loading across the backside of the wafer. The retaining ring assembly 146 includes an extendable retainer 162 which circumscribes the wafer 142.
  • The Structure of the Loading Member and the Mounting Portion
  • To provide the mounting portion, the backing [0024] member 124 includes a wafer facing recess 126. The perimeter of the backing member 124 is configured to receive an edge seal feature 130, e.g., an O-ring (not shown in the empty O-ring groove of FIG. 2) or other type of seal. The edge seal 130 is located and configured to engage the perimeter portion of the backside of the wafer 142 and thereby form, in combination with the recess 126, a pressurizable pocket 123. The pocket includes the recess 126 and the area within the seal 130 over the backside of the wafer. When the backing member 124 is rotated, this feature provides a frictional force between the wafer 142 and the backing member 124 so that the substrate 142 generally turns with the backing member 124.
  • Gas or other fluid (preferably an inert gas) is supplied to or evacuated from the pocket through a [0025] gas passage 125 which is connected through a hose 122 coiled inside the bellows 118 and supplied from a gas line 114. The selective pressurization of the pocket 123 and the bellows chamber 120 provides the loading of the wafer on the polishing pad 182. Additionally, the bellows enables the backing member 124, and thus the wafer 142, to move rotationally with respect to the support plate 102 and in the x, y, and z directions during polishing.
  • The [0026] bellows 118, in combination with the upper surface of the backing member 124, the lower surface of the support plate 102 and a pressure source (not shown), provide the loading member. In one mode of operation, the pressure in the bellows chamber 120 is controlled to be constant and the flexibility of the bellows 118 accommodates misalignments or changes in clearance between the backing member 124 and the surface of the polishing pad 182. The pressure in the bellows chamber 120 is selected to provide the desired loading of the wafer 142 against the polishing pad 182. In this configuration, the pressure in the bellows chamber 120 provides a regulatable uniform force pressing the backing member 124 toward the surface of the polishing pad 182 regardless of the extension of the bellows 118.
  • In turn, pressurizing the [0027] recess 126 behind the wafer 142 enables a uniform contact pressure to exist between the polishing pad 182 and the wafer 142 across the entire surface of the wafer contacting the polishing pad 182.
  • The extension or retraction of the [0028] bellows 118 is controlled by pressurizing or depressurizing the bellows chamber 120 via the gas passage 112. The pressurization or depressurization of the recess 126 in the backing member 124 either pressurizes or depressurized the pocket 123. A negative differential pressure due to vacuum bends the wafer 142 upwardly. A sufficient positive pressure creates a separating force greater than the force from the bellows 118 which forces the seal wafer.
  • The polishing head configuration of FIG. 1 also overcomes the comparative difficulty encountered in prior art head designs when loading and unloading the wafer from the head, and in ensuring that the wafer does not slip from beneath the [0029] backing member 124.
  • In the present head design, the pressure maintained in the pocket may be changed to provide a super-atmospheric pressure to separate the wafer from the carrier when polishing is completed, and to provide a vacuum pressure (preferably of up to approximately 100 torr less than atmospheric pressure) behind the wafer thereby causing atmospheric pressure to maintain the wafer on the head as the head is loaded onto the [0030] polishing pad 182.
  • When the wafer is attached to the [0031] backing member 124 by maintaining a vacuum in the pocket, the wafer may deflect inwardly toward the recess 126. The recess 126 is sufficiently shallow that the total possible deflection of the wafer into the recess, when considered in combination with the span of the wafer 142 across the recess 126, will impose stresses in the wafer 142 which are less than the strength or yield limits of the wafer material.
  • The vacuum need be maintained in the pocket only during the period of time that the polishing head is removed from the [0032] polishing pad 182. Once the polishing head and the wafer 142 are repositioned on the polishing pad 182, the pressure in the pocket is increased, until a pressure above atmospheric pressure is maintained therein. Simultaneously, the pressure in the bellows chamber 120 is increased, to provide a load force to load the wafer 142 against the polishing pad 182.
  • As the pressure in the [0033] bellows chamber 120 is increased, it loads the seal 130 received in the backing member 124 into contact with the backside of the wafer. The seal will compress under this load, which will enhance the sealing characteristics of the seal 130. Therefore, as the pressure in the bellows chamber 120 increases, the threshold pressure at which gas maintained in the pocket 123 will leak past, or “blow-by”, the seal 130, also increases. Blow-by occurs when the head and the seal lift off the wafer. This condition occurs when the pressure in the pocket, when multiplied by the surface area of the wafer 142 circumscribed by the seal 130, exceeds the load force on the seal-wafer interface. In the configuration of the head, as shown in FIG. 3, the area of the backing member 124 which is circumscribed by the bellows 118 is smaller than the area of the wafer 142 circumscribed by the seal 130. Therefore, the pressure in the bellows cavity must exceed the pressure maintained in the pocket to prevent blow-by.
  • Preferably, the pressure maintained in the pocket is approximately 75 torr less than the threshold at which blow-by will occur. At these pressures, the entire backside of the wafer, less a very small annular area outward of the [0034] seal 130, will have a uniform pressure on the back surface thereof which ensures that the front surface of the wafer is uniformly loaded against the polishing pad 182. However, it is specifically contemplated, although not preferred, that higher pressures, including a pressure at or above blow-by, may be used. Where such higher pressures are used, the seal-wafer interface will serve as a relief valve, and blow-by will occur periodically to maintain a desired pressure within the pocket 123.
  • FIG. 2 shows a close up of the right side of the polishing head of FIG. 1. The [0035] seal 130 in this configuration is an O-ring 134 located in an O-ring groove 132 (i.e., collectively: an annular extending portion). This seal is located at the perimeter of the wafer 142 surrounding the recess 126 (and the associated pocket). The perimeter of the backing member 124 is surrounded by the retaining ring assembly 146. The retaining ring includes a the retaining ring 162 which is attached to the backing ring 148. A series of compression springs 172 (i.e., first set of elastic members) support the backing ring 148 on the lip 110 of the descending wall 104. An expandable retaining ring extending bladder 170 can be pressurized through gas supply passage 171 (i.e., a second set of elastic members). When bladder 170 is pressurized, the retaining ring assembly 146 is extended to a location adjacent the wafer 142 as shown by the dashed lines 146 a in FIG. 2.
  • A second configuration of the polishing head of the present invention is shown in FIG. 3, wherein the [0036] seal 130 is a downwardly extending lip seal 136 received on the outer perimeter of the backing member 124, and secured thereon by a backing ring 138 extending about the outer circumference of the lip seal 36. The lip seal 136 is preferably a thin, elastic, member having a rectangular cross section. A portion of the lip seal 136 extends from the underside, or wafer engaging side, of the backing member 124, to engage the upper surface of the wafer 142 immediately inwardly of the perimeter of the wafer 142. As with the O-ring 134, the engagement of the lip seal 136 with the wafer forms a pocket (including wafer recess 126 and a shoulder area inside lip seal) which may be evacuated or pressurized. The lip seal 136 and the O-ring 134 provide sufficient contact between the surface of the substrate and the surface of the seal to create a rotational force due to friction between the two to keep them in contact so that the substrate turns with the polishing head.
  • The Retaining Ring
  • Referring again to FIG. 1, the polishing [0037] head 100 also includes a retaining ring assembly 146 to ensure that the wafer 142 does not slip out from beneath the head during polishing operations. The retaining ring 162 has through holes 164 and counterbores 166 therein (FIG. 3). Retaining ring screws 168 are placed therethrough and threaded into a series of backing-ring bottom-surface threaded holes 160 to hold the retaining ring 162 to a backing ring 148. The retaining ring 162 is preferable made of Delrin or similar plastic material. The backing ring 148 is preferably made of aluminum as are all of the other metal pieces except for the bellows which is stainless steel. The backing ring 148 has a bottom surface 158 facing the retaining ring 162. The backing ring 148 includes an outside flange 152 having a top face 154 facing the bladder 170 and a bottom face 156 facing the series of compression springs 172. The backing ring 148 has an inside flange 150 having a lower face 151 which extends inwardly over the diameter of the retaining member 124 a such that when the backing member 124 a is raised beyond a certain point the backing ring assembly 146 also rises.
  • FIGS. 2 and 3 show details of the retaining [0038] ring assembly 146. The backing ring 148 is urged upwardly away from the lip 110 of the descending wall 104 by a plurality of (for example 6-12) compression springs 172. When the bladder 170 is pressurized to extend the retaining ring assembly 146 to its operating position as shown by the dashed lines 146 a in FIG. 2, the retaining ring 162 surrounds the edge of the wafer being polished. This prevents the wafer from sliding out under the wafer backing member 124, or 124 a. Inflation of the bladder 170 through the gas passage 171 provides a downward force to oppose the compression springs 172 and forces the retaining ring 162 toward and possibly against the polishing pad 182. A continuous continuously pressurized bladder could be employed to replace the series of springs 172 to provide uniformly distributed retracting forces.
  • The [0039] lower surface 151 of the backing ring inside flange 150 is configured so that as the plastic Delrin material of the wafer perimeter retaining ring 162 wears away, the travel of retaining ring is limited by the interference between the lower surface 151 of the upper flange 150 and the top of the wafer backing member 124 a so that the head of the retaining ring retaining screws 168 cannot touch the polishing pad. This prevents the heads of retaining screws 168 from coming in contact with the polishing pad and introducing undesirable contaminants. The perimeter retaining ring can also be mounted without screws, such as by use of key slots requiring insertion and partial rotation to retain the key and opposing grooves having O-rings sized to engage and span the space between grooves.
  • While the invention has been described with regard to specific embodiments, those skilled in the art will recognize that changes can be made in form and detail without departing from the spirit and scope of the invention. [0040]

Claims (17)

What is claimed is:
1. A polishing head, comprising:
a housing;
a backing member to hold a substrate against a polishing pad, the backing member movable relative to the housing, the backing member including an opening therein for applying a vacuum to chuck a substrate to the backing member; and
a retainer surrounding the backing member, the retainer movable relative to the housing independently of the backing member.
2. The polishing head of
claim 1
, wherein the backing member includes a pressurizable recess open to and facing a back surface of the substrate and a seal surrounding the recess and positioned to contact a perimeter portion of the back surface of the substrate.
3. The polishing head of
claim 2
, wherein a pressure in the recess provides a force to load the substrate against the polishing surface.
4. The polishing head of
claim 2
, wherein reducing pressure in the recess vacuum-chucks the substrate to the backing member.
5. The polishing head of
claim 2
, wherein the recess covers substantially the entire back surface of the substrate.
6. The polishing head of
claim 2
, wherein the seal is a lip seal.
7. The polishing head of
claim 1
, further comprising a first chamber to provide a first downward force on the backing member.
8. The polishing head of
claim 7
, wherein the first chamber is positioned between the housing and the backing member.
9. The polishing head of
claim 7
, further comprising a second chamber to provide a second downward force on the substrate.
10. The polishing head of
claim 1
, further comprising a first chamber to provide a first downward force on the substrate.
11. The polishing head of
claim 10
, further comprising a second chamber to provide a second independently adjustable downward force on the retainer.
12. The polishing head of
claim 11
, further comprising an elastic member to urge the retainer away from the polishing pad.
13. The polishing head of
claim 1
, further comprising a first adjustable loading mechanism positioned between the housing and the backing member to cause said backing member to press said substrate against said polishing pad, and a second independently adjustable loading mechanism positioned between said housing support member and the retainer assembly to cause the retainer assembly to press the retainer against the polishing pad.
14. The polishing head of
claim 12
wherein the second loading mechanism including a first mechanism to provide a force to urge the retainer toward the polishing pad and a second mechanism to urge the retainer away from the polishing pad.
15. The polishing head of
claim 14
wherein the first mechanism includes an inflatable bladder to urge said retainer toward said polishing pad.
16. The polishing head of
claim 15
wherein said second mechanism includes an elastic member to urge said retainer away from said polishing pad.
17. The polishing head of
claim 1
, wherein the retainer contacts said polishing pad.
US09/892,143 1995-06-09 2001-06-25 Fluid-pressure regulated wafer polishing head Expired - Lifetime US6443824B2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US09/892,143 US6443824B2 (en) 1995-06-09 2001-06-25 Fluid-pressure regulated wafer polishing head
US10/117,892 US6716094B2 (en) 1995-06-09 2002-04-05 Chemical mechanical polishing retaining ring
US10/201,428 US6652368B2 (en) 1995-06-09 2002-07-22 Chemical mechanical polishing carrier head
US10/688,663 US7101261B2 (en) 1995-06-09 2003-10-16 Fluid-pressure regulated wafer polishing head
US11/400,763 USRE44491E1 (en) 1995-06-09 2006-04-06 Chemical mechanical polishing retaining ring

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/488,921 US6024630A (en) 1995-06-09 1995-06-09 Fluid-pressure regulated wafer polishing head
US09/406,027 US6290577B1 (en) 1995-06-09 1999-09-27 Fluid pressure regulated wafer polishing head
US09/892,143 US6443824B2 (en) 1995-06-09 2001-06-25 Fluid-pressure regulated wafer polishing head

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US09/406,027 Continuation US6290577B1 (en) 1995-06-09 1999-09-27 Fluid pressure regulated wafer polishing head

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US10/117,892 Continuation US6716094B2 (en) 1995-06-09 2002-04-05 Chemical mechanical polishing retaining ring
US10/201,428 Continuation US6652368B2 (en) 1995-06-09 2002-07-22 Chemical mechanical polishing carrier head

Publications (2)

Publication Number Publication Date
US20010041522A1 true US20010041522A1 (en) 2001-11-15
US6443824B2 US6443824B2 (en) 2002-09-03

Family

ID=23941677

Family Applications (7)

Application Number Title Priority Date Filing Date
US08/488,921 Expired - Lifetime US6024630A (en) 1995-06-09 1995-06-09 Fluid-pressure regulated wafer polishing head
US09/406,027 Expired - Lifetime US6290577B1 (en) 1995-06-09 1999-09-27 Fluid pressure regulated wafer polishing head
US09/892,143 Expired - Lifetime US6443824B2 (en) 1995-06-09 2001-06-25 Fluid-pressure regulated wafer polishing head
US10/117,892 Ceased US6716094B2 (en) 1995-06-09 2002-04-05 Chemical mechanical polishing retaining ring
US10/201,428 Expired - Fee Related US6652368B2 (en) 1995-06-09 2002-07-22 Chemical mechanical polishing carrier head
US10/688,663 Expired - Fee Related US7101261B2 (en) 1995-06-09 2003-10-16 Fluid-pressure regulated wafer polishing head
US11/400,763 Expired - Fee Related USRE44491E1 (en) 1995-06-09 2006-04-06 Chemical mechanical polishing retaining ring

Family Applications Before (2)

Application Number Title Priority Date Filing Date
US08/488,921 Expired - Lifetime US6024630A (en) 1995-06-09 1995-06-09 Fluid-pressure regulated wafer polishing head
US09/406,027 Expired - Lifetime US6290577B1 (en) 1995-06-09 1999-09-27 Fluid pressure regulated wafer polishing head

Family Applications After (4)

Application Number Title Priority Date Filing Date
US10/117,892 Ceased US6716094B2 (en) 1995-06-09 2002-04-05 Chemical mechanical polishing retaining ring
US10/201,428 Expired - Fee Related US6652368B2 (en) 1995-06-09 2002-07-22 Chemical mechanical polishing carrier head
US10/688,663 Expired - Fee Related US7101261B2 (en) 1995-06-09 2003-10-16 Fluid-pressure regulated wafer polishing head
US11/400,763 Expired - Fee Related USRE44491E1 (en) 1995-06-09 2006-04-06 Chemical mechanical polishing retaining ring

Country Status (4)

Country Link
US (7) US6024630A (en)
EP (1) EP0747167A3 (en)
JP (2) JPH0919863A (en)
KR (1) KR970003724A (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040077167A1 (en) * 2002-10-11 2004-04-22 Willis George D. Retaining ring for use on a carrier of a polishing apparatus
US20050124269A1 (en) * 2003-12-05 2005-06-09 Takayuki Masunaga Polishing head and polishing apparatus
US20090156101A1 (en) * 2002-09-27 2009-06-18 Komatsu Denshi Kinzoku Kabushiki Kaisha Polishing apparatus, polishing head and polishing method
US20090311945A1 (en) * 2008-06-17 2009-12-17 Roland Strasser Planarization System
US20140120806A1 (en) * 2012-10-29 2014-05-01 Wayne O. Duescher Spider arm driven flexible chamber abrading workholder
US20140120804A1 (en) * 2012-10-29 2014-05-01 Wayne O. Duescher Bellows driven air floatation abrading workholder
US20140127976A1 (en) * 2012-10-29 2014-05-08 Wayne O. Duescher Pin driven flexible chamber abrading workholder
US20140170938A1 (en) * 2012-10-29 2014-06-19 Wayne O. Duescher Flexible diaphragm combination floating and rigid abrading workholder
US8998677B2 (en) * 2012-10-29 2015-04-07 Wayne O. Duescher Bellows driven floatation-type abrading workholder
CN111168515A (en) * 2020-01-09 2020-05-19 徐绪友 Wafer multistation edge polishing equipment

Families Citing this family (220)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5908530A (en) * 1995-05-18 1999-06-01 Obsidian, Inc. Apparatus for chemical mechanical polishing
US6024630A (en) 1995-06-09 2000-02-15 Applied Materials, Inc. Fluid-pressure regulated wafer polishing head
US6746565B1 (en) * 1995-08-17 2004-06-08 Semitool, Inc. Semiconductor processor with wafer face protection
JP3724869B2 (en) * 1995-10-09 2005-12-07 株式会社荏原製作所 Polishing apparatus and method
ATE228915T1 (en) * 1996-01-24 2002-12-15 Lam Res Corp SEMICONDUCTIVE DISC POLISHING HEAD
KR100485002B1 (en) * 1996-02-16 2005-08-29 가부시키가이샤 에바라 세이사꾸쇼 Workpiece polishing apparatus and method
US5762539A (en) * 1996-02-27 1998-06-09 Ebara Corporation Apparatus for and method for polishing workpiece
USRE38854E1 (en) 1996-02-27 2005-10-25 Ebara Corporation Apparatus for and method for polishing workpiece
US5876273A (en) * 1996-04-01 1999-03-02 Kabushiki Kaisha Toshiba Apparatus for polishing a wafer
US5920797A (en) * 1996-12-03 1999-07-06 Applied Materials, Inc. Method for gaseous substrate support
US5857899A (en) * 1997-04-04 1999-01-12 Ontrak Systems, Inc. Wafer polishing head with pad dressing element
TW431942B (en) 1997-04-04 2001-05-01 Tokyo Seimitsu Co Ltd Polishing device
KR100538540B1 (en) * 1997-04-08 2006-06-16 가부시키가이샤 에바라 세이사꾸쇼 Polishing device
US6425812B1 (en) 1997-04-08 2002-07-30 Lam Research Corporation Polishing head for chemical mechanical polishing using linear planarization technology
US6244946B1 (en) 1997-04-08 2001-06-12 Lam Research Corporation Polishing head with removable subcarrier
EP0881039B1 (en) * 1997-05-28 2003-04-16 Tokyo Seimitsu Co.,Ltd. Wafer polishing apparatus with retainer ring
TW375550B (en) * 1997-06-19 1999-12-01 Komatsu Denshi Kinzoku Kk Polishing apparatus for semiconductor wafer
JPH11226865A (en) * 1997-12-11 1999-08-24 Speedfam Co Ltd Carrier and cmp device
US6142857A (en) * 1998-01-06 2000-11-07 Speedfam-Ipec Corporation Wafer polishing with improved backing arrangement
US5989104A (en) * 1998-01-12 1999-11-23 Speedfam-Ipec Corporation Workpiece carrier with monopiece pressure plate and low gimbal point
JP3959173B2 (en) * 1998-03-27 2007-08-15 株式会社東芝 Polishing apparatus and polishing processing method
JPH11285966A (en) * 1998-04-02 1999-10-19 Speedfam-Ipec Co Ltd Carrier and cmp device
EP0992322A4 (en) * 1998-04-06 2006-09-27 Ebara Corp Polishing device
JP2917992B1 (en) * 1998-04-10 1999-07-12 日本電気株式会社 Polishing equipment
US5985094A (en) * 1998-05-12 1999-11-16 Speedfam-Ipec Corporation Semiconductor wafer carrier
US6106379A (en) * 1998-05-12 2000-08-22 Speedfam-Ipec Corporation Semiconductor wafer carrier with automatic ring extension
US6251215B1 (en) 1998-06-03 2001-06-26 Applied Materials, Inc. Carrier head with a multilayer retaining ring for chemical mechanical polishing
JP2000006005A (en) * 1998-06-22 2000-01-11 Speedfam Co Ltd Double side polishing device
US6220930B1 (en) * 1998-11-03 2001-04-24 United Microelectronics Corp. Wafer polishing head
US6283828B1 (en) 1998-11-09 2001-09-04 Tokyo Seimitsu Co., Ltd. Wafer polishing apparatus
US6358129B2 (en) * 1998-11-11 2002-03-19 Micron Technology, Inc. Backing members and planarizing machines for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods of making and using such backing members
US6464571B2 (en) * 1998-12-01 2002-10-15 Nutool, Inc. Polishing apparatus and method with belt drive system adapted to extend the lifetime of a refreshing polishing belt provided therein
US7425250B2 (en) * 1998-12-01 2008-09-16 Novellus Systems, Inc. Electrochemical mechanical processing apparatus
US6422927B1 (en) * 1998-12-30 2002-07-23 Applied Materials, Inc. Carrier head with controllable pressure and loading area for chemical mechanical polishing
US6425809B1 (en) * 1999-02-15 2002-07-30 Ebara Corporation Polishing apparatus
JP4122103B2 (en) * 1999-02-17 2008-07-23 不二越機械工業株式会社 Wafer polishing equipment
US6231428B1 (en) * 1999-03-03 2001-05-15 Mitsubishi Materials Corporation Chemical mechanical polishing head assembly having floating wafer carrier and retaining ring
US6368189B1 (en) * 1999-03-03 2002-04-09 Mitsubishi Materials Corporation Apparatus and method for chemical-mechanical polishing (CMP) head having direct pneumatic wafer polishing pressure
KR20010020807A (en) * 1999-05-03 2001-03-15 조셉 제이. 스위니 Pre-conditioning fixed abrasive articles
JP3068086B1 (en) * 1999-05-07 2000-07-24 株式会社東京精密 Wafer polishing equipment
US6855043B1 (en) * 1999-07-09 2005-02-15 Applied Materials, Inc. Carrier head with a modified flexible membrane
JP3270428B2 (en) * 1999-07-28 2002-04-02 東芝機械株式会社 Swivel for electric injection molding machine
US6290584B1 (en) * 1999-08-13 2001-09-18 Speedfam-Ipec Corporation Workpiece carrier with segmented and floating retaining elements
DE60024559T2 (en) 1999-10-15 2006-08-24 Ebara Corp. Method and device for polishing a workpiece
JP2001121411A (en) 1999-10-29 2001-05-08 Applied Materials Inc Wafer polisher
JP3753577B2 (en) * 1999-11-16 2006-03-08 株式会社荏原製作所 Substrate holding device and polishing apparatus provided with the substrate holding device
US6663466B2 (en) * 1999-11-17 2003-12-16 Applied Materials, Inc. Carrier head with a substrate detector
US7029365B2 (en) * 2000-02-17 2006-04-18 Applied Materials Inc. Pad assembly for electrochemical mechanical processing
US6991526B2 (en) * 2002-09-16 2006-01-31 Applied Materials, Inc. Control of removal profile in electrochemically assisted CMP
US20050092621A1 (en) * 2000-02-17 2005-05-05 Yongqi Hu Composite pad assembly for electrochemical mechanical processing (ECMP)
US7678245B2 (en) * 2000-02-17 2010-03-16 Applied Materials, Inc. Method and apparatus for electrochemical mechanical processing
US6991528B2 (en) * 2000-02-17 2006-01-31 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US6979248B2 (en) * 2002-05-07 2005-12-27 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US20080156657A1 (en) * 2000-02-17 2008-07-03 Butterfield Paul D Conductive polishing article for electrochemical mechanical polishing
US7303662B2 (en) * 2000-02-17 2007-12-04 Applied Materials, Inc. Contacts for electrochemical processing
US6962524B2 (en) * 2000-02-17 2005-11-08 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7059948B2 (en) * 2000-12-22 2006-06-13 Applied Materials Articles for polishing semiconductor substrates
US7374644B2 (en) * 2000-02-17 2008-05-20 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7303462B2 (en) * 2000-02-17 2007-12-04 Applied Materials, Inc. Edge bead removal by an electro polishing process
US20040182721A1 (en) * 2003-03-18 2004-09-23 Applied Materials, Inc. Process control in electro-chemical mechanical polishing
US20040020789A1 (en) * 2000-02-17 2004-02-05 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7125477B2 (en) * 2000-02-17 2006-10-24 Applied Materials, Inc. Contacts for electrochemical processing
US7670468B2 (en) * 2000-02-17 2010-03-02 Applied Materials, Inc. Contact assembly and method for electrochemical mechanical processing
US20030213703A1 (en) * 2002-05-16 2003-11-20 Applied Materials, Inc. Method and apparatus for substrate polishing
US6848970B2 (en) * 2002-09-16 2005-02-01 Applied Materials, Inc. Process control in electrochemically assisted planarization
US7066800B2 (en) * 2000-02-17 2006-06-27 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
KR20020084150A (en) 2000-02-25 2002-11-04 로델 홀딩스 인코포레이티드 Polishing pad with a transparent portion
US6666756B1 (en) * 2000-03-31 2003-12-23 Lam Research Corporation Wafer carrier head assembly
US6443810B1 (en) * 2000-04-11 2002-09-03 Taiwan Semiconductor Manufacturing Co., Ltd. Polishing platen equipped with guard ring for chemical mechanical polishing
US6558232B1 (en) 2000-05-12 2003-05-06 Multi-Planar Technologies, Inc. System and method for CMP having multi-pressure zone loading for improved edge and annular zone material removal control
US6506105B1 (en) 2000-05-12 2003-01-14 Multi-Planar Technologies, Inc. System and method for pneumatic diaphragm CMP head having separate retaining ring and multi-region wafer pressure control
US6602114B1 (en) 2000-05-19 2003-08-05 Applied Materials Inc. Multilayer retaining ring for chemical mechanical polishing
JP2001338901A (en) * 2000-05-26 2001-12-07 Hitachi Ltd Process method and equipment for planarization, and method for manufacturing semiconductor device
WO2001094075A1 (en) * 2000-06-08 2001-12-13 Speedfam-Ipec Corporation Orbital polishing apparatus
US7029381B2 (en) * 2000-07-31 2006-04-18 Aviza Technology, Inc. Apparatus and method for chemical mechanical polishing of substrates
AU2001283529A1 (en) * 2000-07-31 2002-02-13 Asml Us, Inc. Apparatus and method for chemical mechanical polishing of substrates
US6488565B1 (en) 2000-08-29 2002-12-03 Applied Materials, Inc. Apparatus for chemical mechanical planarization having nested load cups
TWI246448B (en) * 2000-08-31 2006-01-01 Multi Planar Technologies Inc Chemical mechanical polishing (CMP) head, apparatus, and method and planarized semiconductor wafer produced thereby
US6540590B1 (en) 2000-08-31 2003-04-01 Multi-Planar Technologies, Inc. Chemical mechanical polishing apparatus and method having a rotating retaining ring
US6527625B1 (en) 2000-08-31 2003-03-04 Multi-Planar Technologies, Inc. Chemical mechanical polishing apparatus and method having a soft backed polishing head
US6676497B1 (en) 2000-09-08 2004-01-13 Applied Materials Inc. Vibration damping in a chemical mechanical polishing system
US7255637B2 (en) 2000-09-08 2007-08-14 Applied Materials, Inc. Carrier head vibration damping
US7497767B2 (en) 2000-09-08 2009-03-03 Applied Materials, Inc. Vibration damping during chemical mechanical polishing
US6848980B2 (en) 2001-10-10 2005-02-01 Applied Materials, Inc. Vibration damping in a carrier head
US6572446B1 (en) 2000-09-18 2003-06-03 Applied Materials Inc. Chemical mechanical polishing pad conditioning element with discrete points and compliant membrane
KR100423909B1 (en) * 2000-11-23 2004-03-24 삼성전자주식회사 Polishing head of a chemical mechanical polishing machine and polishing method using the polishing head
US6896776B2 (en) * 2000-12-18 2005-05-24 Applied Materials Inc. Method and apparatus for electro-chemical processing
US6776695B2 (en) * 2000-12-21 2004-08-17 Lam Research Corporation Platen design for improving edge performance in CMP applications
US6461879B1 (en) * 2001-01-09 2002-10-08 Advanced Micro Devices Inc. Method and apparatus for measuring effects of packaging stresses of common IC electrical performance parameters at wafer sort
US6716084B2 (en) * 2001-01-11 2004-04-06 Nutool, Inc. Carrier head for holding a wafer and allowing processing on a front face thereof to occur
US6613200B2 (en) 2001-01-26 2003-09-02 Applied Materials, Inc. Electro-chemical plating with reduced thickness and integration with chemical mechanical polisher into a single platform
JP3294600B1 (en) * 2001-02-28 2002-06-24 不二越機械工業株式会社 Wafer polishing equipment
US6855037B2 (en) 2001-03-12 2005-02-15 Asm-Nutool, Inc. Method of sealing wafer backside for full-face electrochemical plating
US6939206B2 (en) * 2001-03-12 2005-09-06 Asm Nutool, Inc. Method and apparatus of sealing wafer backside for full-face electrochemical plating
US6786809B1 (en) 2001-03-30 2004-09-07 Cypress Semiconductor Corp. Wafer carrier, wafer carrier components, and CMP system for polishing a semiconductor topography
US7137879B2 (en) * 2001-04-24 2006-11-21 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7344432B2 (en) * 2001-04-24 2008-03-18 Applied Materials, Inc. Conductive pad with ion exchange membrane for electrochemical mechanical polishing
US6910949B1 (en) * 2001-04-25 2005-06-28 Lam Research Corporation Spherical cap-shaped polishing head in a chemical mechanical polishing apparatus for semiconductor wafers
EP1260315B1 (en) * 2001-05-25 2003-12-10 Infineon Technologies AG Semiconductor substrate holder for chemical-mechanical polishing comprising a movable plate
US6558236B2 (en) * 2001-06-26 2003-05-06 Applied Materials, Inc. Method and apparatus for chemical mechanical polishing
US6761619B1 (en) * 2001-07-10 2004-07-13 Cypress Semiconductor Corp. Method and system for spatial uniform polishing
US6790768B2 (en) * 2001-07-11 2004-09-14 Applied Materials Inc. Methods and apparatus for polishing substrates comprising conductive and dielectric materials with reduced topographical defects
US6771482B2 (en) * 2001-07-30 2004-08-03 Unaxis Usa Inc. Perimeter seal for backside cooling of substrates
JP4025960B2 (en) * 2001-08-08 2007-12-26 信越化学工業株式会社 Polishing method for square photomask substrate, square photomask substrate, photomask blanks and photomask
US6712673B2 (en) * 2001-10-04 2004-03-30 Memc Electronic Materials, Inc. Polishing apparatus, polishing head and method
US20030072639A1 (en) * 2001-10-17 2003-04-17 Applied Materials, Inc. Substrate support
JP2003151933A (en) * 2001-11-19 2003-05-23 Tokyo Seimitsu Co Ltd Wafer-polishing apparatus
US6656024B1 (en) * 2001-12-21 2003-12-02 Lam Research Corporation Method and apparatus for reducing compressed dry air usage during chemical mechanical planarization
US6835125B1 (en) 2001-12-27 2004-12-28 Applied Materials Inc. Retainer with a wear surface for chemical mechanical polishing
US6837983B2 (en) * 2002-01-22 2005-01-04 Applied Materials, Inc. Endpoint detection for electro chemical mechanical polishing and electropolishing processes
KR100416808B1 (en) * 2002-02-04 2004-01-31 삼성전자주식회사 Polishing head of chemical mechanical polishing apparatus for manufacturing semiconductor device and chemical mechanical polishing apparatus having it
US6739958B2 (en) 2002-03-19 2004-05-25 Applied Materials Inc. Carrier head with a vibration reduction feature for a chemical mechanical polishing system
US20050194681A1 (en) * 2002-05-07 2005-09-08 Yongqi Hu Conductive pad with high abrasion
US6866571B1 (en) 2002-05-21 2005-03-15 Cypress Semiconductor Corp. Boltless carrier ring/carrier plate attachment assembly
US7316602B2 (en) * 2002-05-23 2008-01-08 Novellus Systems, Inc. Constant low force wafer carrier for electrochemical mechanical processing and chemical mechanical polishing
US6875076B2 (en) 2002-06-17 2005-04-05 Accretech Usa, Inc. Polishing machine and method
US20040072445A1 (en) * 2002-07-11 2004-04-15 Applied Materials, Inc. Effective method to improve surface finish in electrochemically assisted CMP
US20050061674A1 (en) * 2002-09-16 2005-03-24 Yan Wang Endpoint compensation in electroprocessing
US7112270B2 (en) * 2002-09-16 2006-09-26 Applied Materials, Inc. Algorithm for real-time process control of electro-polishing
US20040261945A1 (en) * 2002-10-02 2004-12-30 Ensinger Kunststofftechnoligie Gbr Retaining ring for holding semiconductor wafers in a chemical mechanical polishing apparatus
DE10247179A1 (en) * 2002-10-02 2004-04-15 Ensinger Kunststofftechnologie Gbr Retaining ring for holding semiconductor wafers in a chemical mechanical polishing device
DE10247180A1 (en) 2002-10-02 2004-04-15 Ensinger Kunststofftechnologie Gbr Retaining ring for holding semiconductor wafers in a chemical mechanical polishing device
TWI238754B (en) * 2002-11-07 2005-09-01 Ebara Tech Inc Vertically adjustable chemical mechanical polishing head having a pivot mechanism and method for use thereof
US6796887B2 (en) * 2002-11-13 2004-09-28 Speedfam-Ipec Corporation Wear ring assembly
TWM255104U (en) 2003-02-05 2005-01-11 Applied Materials Inc Retaining ring with flange for chemical mechanical polishing
DE10305711B4 (en) * 2003-02-12 2005-09-01 Infineon Technologies Ag Gimpelhalter and chemical-mechanical polishing plant with such a Gimpelhalter
US7842169B2 (en) * 2003-03-04 2010-11-30 Applied Materials, Inc. Method and apparatus for local polishing control
DE10311830A1 (en) 2003-03-14 2004-09-23 Ensinger Kunststofftechnologie Gbr Spacer profile between glass panes in a double glazing structure has an organic and/or inorganic bonding agent matrix containing particles to adsorb water vapor and keep the space dry
US20060180486A1 (en) * 2003-04-21 2006-08-17 Bennett David W Modular panel and storage system for flat items such as media discs and holders therefor
US6974371B2 (en) 2003-04-30 2005-12-13 Applied Materials, Inc. Two part retaining ring
JP4086722B2 (en) * 2003-06-24 2008-05-14 株式会社荏原製作所 Substrate holding device and polishing device
JP2005034959A (en) * 2003-07-16 2005-02-10 Ebara Corp Polishing device and retainer ring
JP4642771B2 (en) * 2003-10-22 2011-03-02 ネックス システムズ インコーポレイテッド Method and apparatus for fluid processing a workpiece
US7727366B2 (en) 2003-10-22 2010-06-01 Nexx Systems, Inc. Balancing pressure to improve a fluid seal
US20050121141A1 (en) * 2003-11-13 2005-06-09 Manens Antoine P. Real time process control for a polishing process
US7186164B2 (en) * 2003-12-03 2007-03-06 Applied Materials, Inc. Processing pad assembly with zone control
US20050178666A1 (en) * 2004-01-13 2005-08-18 Applied Materials, Inc. Methods for fabrication of a polishing article
US20060021974A1 (en) * 2004-01-29 2006-02-02 Applied Materials, Inc. Method and composition for polishing a substrate
US7390744B2 (en) * 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate
US7648622B2 (en) * 2004-02-27 2010-01-19 Novellus Systems, Inc. System and method for electrochemical mechanical polishing
US7033252B2 (en) * 2004-03-05 2006-04-25 Strasbaugh Wafer carrier with pressurized membrane and retaining ring actuator
US7063604B2 (en) * 2004-03-05 2006-06-20 Strasbaugh Independent edge control for CMP carriers
EP1574517A1 (en) * 2004-03-09 2005-09-14 Innogenetics N.V. HCV E1 comprising specific disulfide bridges
US7086939B2 (en) * 2004-03-19 2006-08-08 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring with integral polymer backing
US7485028B2 (en) 2004-03-19 2009-02-03 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same
US20050249602A1 (en) * 2004-05-06 2005-11-10 Melvin Freling Integrated ceramic/metallic components and methods of making same
US20060030156A1 (en) * 2004-08-05 2006-02-09 Applied Materials, Inc. Abrasive conductive polishing article for electrochemical mechanical polishing
US7084064B2 (en) * 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
WO2006039436A2 (en) * 2004-10-01 2006-04-13 Applied Materials, Inc. Pad design for electrochemical mechanical polishing
US7520968B2 (en) * 2004-10-05 2009-04-21 Applied Materials, Inc. Conductive pad design modification for better wafer-pad contact
US7048621B2 (en) * 2004-10-27 2006-05-23 Applied Materials Inc. Retaining ring deflection control
JP4597634B2 (en) * 2004-11-01 2010-12-15 株式会社荏原製作所 Top ring, substrate polishing apparatus and polishing method
CN101934491B (en) 2004-11-01 2012-07-25 株式会社荏原制作所 Polishing apparatus
WO2006057713A2 (en) * 2004-11-29 2006-06-01 Rajeev Bajaj Electro-method and apparatus for improved chemical mechanical planarization pad with uniform polish performance
US20070224925A1 (en) * 2006-03-21 2007-09-27 Rajeev Bajaj Chemical Mechanical Polishing Pad
US7815778B2 (en) * 2005-11-23 2010-10-19 Semiquest Inc. Electro-chemical mechanical planarization pad with uniform polish performance
US20090061744A1 (en) * 2007-08-28 2009-03-05 Rajeev Bajaj Polishing pad and method of use
WO2006057720A1 (en) * 2004-11-29 2006-06-01 Rajeev Bajaj Method and apparatus for improved chemical mechanical planarization pad with pressure control and process monitor
US7846008B2 (en) * 2004-11-29 2010-12-07 Semiquest Inc. Method and apparatus for improved chemical mechanical planarization and CMP pad
US20080318505A1 (en) * 2004-11-29 2008-12-25 Rajeev Bajaj Chemical mechanical planarization pad and method of use thereof
US7101272B2 (en) * 2005-01-15 2006-09-05 Applied Materials, Inc. Carrier head for thermal drift compensation
US7655565B2 (en) * 2005-01-26 2010-02-02 Applied Materials, Inc. Electroprocessing profile control
US20060169674A1 (en) * 2005-01-28 2006-08-03 Daxin Mao Method and composition for polishing a substrate
WO2006081589A2 (en) * 2005-01-28 2006-08-03 Applied Materials, Inc. Tungsten electroprocessing
US7762871B2 (en) * 2005-03-07 2010-07-27 Rajeev Bajaj Pad conditioner design and method of use
US8398463B2 (en) * 2005-03-07 2013-03-19 Rajeev Bajaj Pad conditioner and method
US20060219663A1 (en) * 2005-03-31 2006-10-05 Applied Materials, Inc. Metal CMP process on one or more polishing stations using slurries with oxidizers
US7427340B2 (en) * 2005-04-08 2008-09-23 Applied Materials, Inc. Conductive pad
US20070026772A1 (en) * 2005-07-28 2007-02-01 Dolechek Kert L Apparatus for use in processing a semiconductor workpiece
US20080003931A1 (en) * 2005-11-22 2008-01-03 Manens Antoine P System and method for in-situ head rinse
US20070153453A1 (en) * 2006-01-05 2007-07-05 Applied Materials, Inc. Fully conductive pad for electrochemical mechanical processing
US20100173567A1 (en) * 2006-02-06 2010-07-08 Chien-Min Sung Methods and Devices for Enhancing Chemical Mechanical Polishing Processes
US20070235344A1 (en) * 2006-04-06 2007-10-11 Applied Materials, Inc. Process for high copper removal rate with good planarization and surface finish
US20070251832A1 (en) * 2006-04-27 2007-11-01 Applied Materials, Inc. Method and apparatus for electrochemical mechanical polishing of cu with higher liner velocity for better surface finish and higher removal rate during clearance
CN101484277A (en) * 2006-05-02 2009-07-15 Nxp股份有限公司 Wafer de-chucking
US7422982B2 (en) * 2006-07-07 2008-09-09 Applied Materials, Inc. Method and apparatus for electroprocessing a substrate with edge profile control
US20080051017A1 (en) * 2006-08-22 2008-02-28 Essilor International (Compagnie Generale D'optique) Process for holding an optical lens on a holder of a lens machining equipment
JP2008091665A (en) * 2006-10-03 2008-04-17 Nec Electronics Corp Cmp equipment
US7597608B2 (en) * 2006-10-30 2009-10-06 Applied Materials, Inc. Pad conditioning device with flexible media mount
KR100814157B1 (en) 2007-02-14 2008-03-14 정영수 Air presser tube type polishing device
US7750657B2 (en) 2007-03-15 2010-07-06 Applied Materials Inc. Polishing head testing with movable pedestal
US8012000B2 (en) * 2007-04-02 2011-09-06 Applied Materials, Inc. Extended pad life for ECMP and barrier removal
US20080293343A1 (en) * 2007-05-22 2008-11-27 Yuchun Wang Pad with shallow cells for electrochemical mechanical processing
US20090036030A1 (en) * 2007-08-03 2009-02-05 Winbond Electronics Corp. Polishing head and chemical mechanical polishing process using the same
JP5230982B2 (en) * 2007-09-10 2013-07-10 株式会社ディスコ Plate processing tray and processing apparatus
KR101619416B1 (en) * 2008-03-25 2016-05-10 어플라이드 머티어리얼스, 인코포레이티드 Improved carrier head membrane
KR101004432B1 (en) * 2008-06-10 2010-12-28 세메스 주식회사 Single type substrate treating apparatus
JP5075793B2 (en) * 2008-11-06 2012-11-21 東京エレクトロン株式会社 Movable gas introduction structure and substrate processing apparatus
US10160093B2 (en) 2008-12-12 2018-12-25 Applied Materials, Inc. Carrier head membrane roughness to control polishing rate
JP5384992B2 (en) * 2009-04-20 2014-01-08 株式会社岡本工作機械製作所 Substrate holding head used in polishing apparatus
KR101160266B1 (en) * 2009-10-07 2012-06-27 주식회사 엘지실트론 Wafer support member, method for manufacturing the same and wafer polishing unit
US8190285B2 (en) * 2010-05-17 2012-05-29 Applied Materials, Inc. Feedback for polishing rate correction in chemical mechanical polishing
US8740673B2 (en) * 2010-10-05 2014-06-03 Strasbaugh CMP retaining ring with soft retaining ring insert
CN102172887B (en) * 2011-02-16 2013-01-30 清华大学 Polishing head
JP5291746B2 (en) * 2011-03-22 2013-09-18 株式会社荏原製作所 Polishing equipment
CN102717324B (en) * 2012-05-29 2016-05-11 深圳莱宝高科技股份有限公司 Substrate board treatment
JP2014072510A (en) * 2012-10-02 2014-04-21 Disco Abrasive Syst Ltd Chuck table
US8998676B2 (en) * 2012-10-26 2015-04-07 Applied Materials, Inc. Retaining ring with selected stiffness and thickness
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
DE112013006059B4 (en) * 2012-12-18 2023-02-23 Globalwafers Co., Ltd. Double side polishing machine with a platen parallelism control
US10226853B2 (en) 2013-01-18 2019-03-12 Applied Materials, Inc. Methods and apparatus for conditioning of chemical mechanical polishing pads
JP5538601B1 (en) * 2013-08-22 2014-07-02 ミクロ技研株式会社 Polishing head and polishing processing apparatus
JP2015188955A (en) * 2014-03-27 2015-11-02 株式会社荏原製作所 Polishing device
EP3427796A1 (en) 2014-09-22 2019-01-16 Koninklijke Philips N.V. Radiation therapy planning optimization and visualization
US10029346B2 (en) 2015-10-16 2018-07-24 Applied Materials, Inc. External clamp ring for a chemical mechanical polishing carrier head
TWI730044B (en) * 2016-03-15 2021-06-11 日商荏原製作所股份有限公司 Substrate grinding method, top ring and substrate grinding device
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
US11890717B2 (en) 2018-12-26 2024-02-06 Applied Materials, Inc. Polishing system with platen for substrate edge control
TWI840511B (en) * 2019-02-28 2024-05-01 美商應用材料股份有限公司 Retainer for chemical mechanical polishing carrier head
US11691241B1 (en) * 2019-08-05 2023-07-04 Keltech Engineering, Inc. Abrasive lapping head with floating and rigid workpiece carrier
US11325223B2 (en) 2019-08-23 2022-05-10 Applied Materials, Inc. Carrier head with segmented substrate chuck
US11931857B2 (en) * 2020-06-26 2024-03-19 Applied Materials, Inc. Deformable substrate chuck
CN112171504B (en) * 2020-09-30 2021-08-10 车艾建 Wafer etching back grinding machine
WO2022081398A1 (en) * 2020-10-13 2022-04-21 Applied Materials, Inc. Substrate polishing apparatus with contact extension or adjustable stop
US11623321B2 (en) * 2020-10-14 2023-04-11 Applied Materials, Inc. Polishing head retaining ring tilting moment control
US11919120B2 (en) 2021-02-25 2024-03-05 Applied Materials, Inc. Polishing system with contactless platen edge control
KR102606293B1 (en) * 2021-10-08 2023-11-27 성균관대학교산학협력단 Transporting device for goods
CN114147624A (en) * 2021-11-02 2022-03-08 北京子牛亦东科技有限公司 Check ring of grinding head for chemical mechanical grinding equipment

Family Cites Families (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3559346A (en) * 1969-02-04 1971-02-02 Bell Telephone Labor Inc Wafer polishing apparatus and method
US3731435A (en) * 1971-02-09 1973-05-08 Speedfam Corp Polishing machine load plate
US4141180A (en) * 1977-09-21 1979-02-27 Kayex Corporation Polishing apparatus
DE2809274A1 (en) * 1978-03-03 1979-09-13 Wacker Chemitronic PROCESS FOR COMPARISON OF POLISHING REMOVAL FROM DISCS DURING POLISHING
US4519168A (en) * 1979-09-18 1985-05-28 Speedfam Corporation Liquid waxless fixturing of microsize wafers
US4256535A (en) * 1979-12-05 1981-03-17 Western Electric Company, Inc. Method of polishing a semiconductor wafer
US4373991A (en) * 1982-01-28 1983-02-15 Western Electric Company, Inc. Methods and apparatus for polishing a semiconductor wafer
US4435247A (en) * 1983-03-10 1984-03-06 International Business Machines Corporation Method for polishing titanium carbide
FR2558095B1 (en) * 1984-03-14 1988-04-08 Ribard Pierre IMPROVEMENTS TO THE WORKING HEADS OF POLISHING MACHINES AND THE LIKE
JPS6125768A (en) * 1984-07-13 1986-02-04 Nec Corp Work holding mechanism for surface polishing machine
DE3585200D1 (en) * 1984-10-15 1992-02-27 Nissei Ind Co FLAT GRINDING MACHINE.
US4600469A (en) * 1984-12-21 1986-07-15 Honeywell Inc. Method for polishing detector material
NL8503217A (en) * 1985-11-22 1987-06-16 Hoogovens Groep Bv PREPARATION HOLDER.
US4918870A (en) * 1986-05-16 1990-04-24 Siltec Corporation Floating subcarriers for wafer polishing apparatus
JPH0767665B2 (en) 1986-12-08 1995-07-26 スピ−ドフアム株式会社 Flat polishing machine
JPS63300858A (en) * 1987-05-29 1988-12-08 Hitachi Ltd Air bearing type work holder
JPS6445566U (en) 1987-09-17 1989-03-20
JPS63114870A (en) * 1987-10-22 1988-05-19 Nippon Telegr & Teleph Corp <Ntt> Vacuum-absorbing method for wafer
JPH0696225B2 (en) * 1987-10-23 1994-11-30 信越半導体株式会社 Polishing method
US4918869A (en) * 1987-10-28 1990-04-24 Fujikoshi Machinery Corporation Method for lapping a wafer material and an apparatus therefor
JPH01216768A (en) * 1988-02-25 1989-08-30 Showa Denko Kk Method and device for polishing semiconductor substrate
US4944119A (en) * 1988-06-20 1990-07-31 Westech Systems, Inc. Apparatus for transporting wafer to and from polishing head
US5095661A (en) * 1988-06-20 1992-03-17 Westech Systems, Inc. Apparatus for transporting wafer to and from polishing head
JPH079896B2 (en) * 1988-10-06 1995-02-01 信越半導体株式会社 Polishing equipment
JP2527232B2 (en) * 1989-03-16 1996-08-21 株式会社日立製作所 Polishing equipment
US5255474A (en) * 1990-08-06 1993-10-26 Matsushita Electric Industrial Co., Ltd. Polishing spindle
US5230184A (en) * 1991-07-05 1993-07-27 Motorola, Inc. Distributed polishing head
US5193316A (en) * 1991-10-29 1993-03-16 Texas Instruments Incorporated Semiconductor wafer polishing using a hydrostatic medium
US5205082A (en) * 1991-12-20 1993-04-27 Cybeq Systems, Inc. Wafer polisher head having floating retainer ring
US5329732A (en) * 1992-06-15 1994-07-19 Speedfam Corporation Wafer polishing method and apparatus
EP0589433B1 (en) * 1992-09-24 1999-07-28 Ebara Corporation Polishing apparatus
JP3370112B2 (en) * 1992-10-12 2003-01-27 不二越機械工業株式会社 Wafer polishing equipment
US5232875A (en) * 1992-10-15 1993-08-03 Micron Technology, Inc. Method and apparatus for improving planarity of chemical-mechanical planarization operations
US5398459A (en) * 1992-11-27 1995-03-21 Kabushiki Kaisha Toshiba Method and apparatus for polishing a workpiece
US5377451A (en) * 1993-02-23 1995-01-03 Memc Electronic Materials, Inc. Wafer polishing apparatus and method
US5635083A (en) * 1993-08-06 1997-06-03 Intel Corporation Method and apparatus for chemical-mechanical polishing using pneumatic pressure applied to the backside of a substrate
US5443416A (en) * 1993-09-09 1995-08-22 Cybeq Systems Incorporated Rotary union for coupling fluids in a wafer polishing apparatus
US5584746A (en) * 1993-10-18 1996-12-17 Shin-Etsu Handotai Co., Ltd. Method of polishing semiconductor wafers and apparatus therefor
JP3311116B2 (en) 1993-10-28 2002-08-05 株式会社東芝 Semiconductor manufacturing equipment
JP2716653B2 (en) 1993-11-01 1998-02-18 不二越機械工業株式会社 Wafer polishing apparatus and polishing method
US5624299A (en) * 1993-12-27 1997-04-29 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved carrier and method of use
US5643053A (en) * 1993-12-27 1997-07-01 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved polishing control
US5423716A (en) * 1994-01-05 1995-06-13 Strasbaugh; Alan Wafer-handling apparatus having a resilient membrane which holds wafer when a vacuum is applied
US5449316A (en) * 1994-01-05 1995-09-12 Strasbaugh; Alan Wafer carrier for film planarization
JP3042293B2 (en) * 1994-02-18 2000-05-15 信越半導体株式会社 Wafer polishing equipment
JP3595011B2 (en) 1994-03-02 2004-12-02 アプライド マテリアルズ インコーポレイテッド Chemical mechanical polishing equipment with improved polishing control
JPH07241764A (en) * 1994-03-04 1995-09-19 Fujitsu Ltd Polishing device and polishing method
US5423558A (en) * 1994-03-24 1995-06-13 Ipec/Westech Systems, Inc. Semiconductor wafer carrier and method
JPH0811055A (en) 1994-06-28 1996-01-16 Sony Corp Polishing device, holding method and holding structure of material to be polished in polishing device
US5651724A (en) 1994-09-08 1997-07-29 Ebara Corporation Method and apparatus for polishing workpiece
JP3501430B2 (en) * 1994-09-29 2004-03-02 株式会社リコー Reversible thermochromic composition and recording medium using the same
JP3158934B2 (en) 1995-02-28 2001-04-23 三菱マテリアル株式会社 Wafer polishing equipment
US5642474A (en) * 1995-03-06 1997-06-24 Hewlett-Packard Company Arbitrary masking technique for filling in shapes for display
US5908530A (en) 1995-05-18 1999-06-01 Obsidian, Inc. Apparatus for chemical mechanical polishing
US6024630A (en) * 1995-06-09 2000-02-15 Applied Materials, Inc. Fluid-pressure regulated wafer polishing head
US5569062A (en) * 1995-07-03 1996-10-29 Speedfam Corporation Polishing pad conditioning
US5643061A (en) * 1995-07-20 1997-07-01 Integrated Process Equipment Corporation Pneumatic polishing head for CMP apparatus
US5695392A (en) 1995-08-09 1997-12-09 Speedfam Corporation Polishing device with improved handling of fluid polishing media
JP3129172B2 (en) 1995-11-14 2001-01-29 日本電気株式会社 Polishing apparatus and polishing method
JP3072962B2 (en) 1995-11-30 2000-08-07 ロデール・ニッタ株式会社 Workpiece holder for polishing and method of manufacturing the same
KR100485002B1 (en) 1996-02-16 2005-08-29 가부시키가이샤 에바라 세이사꾸쇼 Workpiece polishing apparatus and method
US6251215B1 (en) 1998-06-03 2001-06-26 Applied Materials, Inc. Carrier head with a multilayer retaining ring for chemical mechanical polishing

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090156101A1 (en) * 2002-09-27 2009-06-18 Komatsu Denshi Kinzoku Kabushiki Kaisha Polishing apparatus, polishing head and polishing method
US7654883B2 (en) * 2002-09-27 2010-02-02 Sumco Techxiv Corporation Polishing apparatus, polishing head and polishing method
US20040077167A1 (en) * 2002-10-11 2004-04-22 Willis George D. Retaining ring for use on a carrier of a polishing apparatus
US7160493B2 (en) 2002-10-11 2007-01-09 Semplastics, Llc Retaining ring for use on a carrier of a polishing apparatus
US20050124269A1 (en) * 2003-12-05 2005-06-09 Takayuki Masunaga Polishing head and polishing apparatus
US6976908B2 (en) * 2003-12-05 2005-12-20 Kabushiki Kaisha Toshiba Polishing head and polishing apparatus
US20090311945A1 (en) * 2008-06-17 2009-12-17 Roland Strasser Planarization System
US20140120804A1 (en) * 2012-10-29 2014-05-01 Wayne O. Duescher Bellows driven air floatation abrading workholder
US20140120806A1 (en) * 2012-10-29 2014-05-01 Wayne O. Duescher Spider arm driven flexible chamber abrading workholder
US20140127976A1 (en) * 2012-10-29 2014-05-08 Wayne O. Duescher Pin driven flexible chamber abrading workholder
US20140170938A1 (en) * 2012-10-29 2014-06-19 Wayne O. Duescher Flexible diaphragm combination floating and rigid abrading workholder
US8845394B2 (en) * 2012-10-29 2014-09-30 Wayne O. Duescher Bellows driven air floatation abrading workholder
US8998678B2 (en) * 2012-10-29 2015-04-07 Wayne O. Duescher Spider arm driven flexible chamber abrading workholder
US8998677B2 (en) * 2012-10-29 2015-04-07 Wayne O. Duescher Bellows driven floatation-type abrading workholder
US9011207B2 (en) * 2012-10-29 2015-04-21 Wayne O. Duescher Flexible diaphragm combination floating and rigid abrading workholder
US9039488B2 (en) * 2012-10-29 2015-05-26 Wayne O. Duescher Pin driven flexible chamber abrading workholder
CN111168515A (en) * 2020-01-09 2020-05-19 徐绪友 Wafer multistation edge polishing equipment

Also Published As

Publication number Publication date
EP0747167A2 (en) 1996-12-11
US6652368B2 (en) 2003-11-25
US6443824B2 (en) 2002-09-03
US6024630A (en) 2000-02-15
US7101261B2 (en) 2006-09-05
US6716094B2 (en) 2004-04-06
JP2006049924A (en) 2006-02-16
USRE44491E1 (en) 2013-09-10
US20040087254A1 (en) 2004-05-06
KR970003724A (en) 1997-01-28
JPH0919863A (en) 1997-01-21
JP4238244B2 (en) 2009-03-18
US20020173255A1 (en) 2002-11-21
EP0747167A3 (en) 1997-01-29
US6290577B1 (en) 2001-09-18
US20020182995A1 (en) 2002-12-05

Similar Documents

Publication Publication Date Title
US6443824B2 (en) Fluid-pressure regulated wafer polishing head
US5913714A (en) Method for dressing a polishing pad during polishing of a semiconductor wafer
EP1133380B1 (en) A carrier head with edge control for chemical mechanical polishing
US7883397B2 (en) Substrate retainer
US5803799A (en) Wafer polishing head
US6645044B2 (en) Method of chemical mechanical polishing with controllable pressure and loading area
KR100811172B1 (en) Pneumatic diaphragm head having an independent retaining ring and multi-region pressure control, and method to use the same
US7001260B2 (en) Carrier head with a compressible film
US6890249B1 (en) Carrier head with edge load retaining ring
US6872130B1 (en) Carrier head with non-contact retainer
KR20010033796A (en) A carrier head with a removable retaining ring for a chemical mechanical polishing appartus
KR100920709B1 (en) Chemical mechanical polishing cmp head, apparatus, and method and planarized semiconductor wafer produced thereby
US6641461B2 (en) Chemical mechanical polishing apparatus having edge, center and annular zone control of material removal
US20060019586A1 (en) Carrier head for chemical mechanical polishing

Legal Events

Date Code Title Description
STCF Information on status: patent grant

Free format text: PATENTED CASE

FPAY Fee payment

Year of fee payment: 4

FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12