US20010004920A1 - Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma - Google Patents
Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma Download PDFInfo
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- US20010004920A1 US20010004920A1 US09/773,409 US77340901A US2001004920A1 US 20010004920 A1 US20010004920 A1 US 20010004920A1 US 77340901 A US77340901 A US 77340901A US 2001004920 A1 US2001004920 A1 US 2001004920A1
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- 238000009616 inductively coupled plasma Methods 0.000 title 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 26
- 230000008569 process Effects 0.000 claims abstract description 26
- 238000012545 processing Methods 0.000 claims abstract description 25
- 238000005086 pumping Methods 0.000 claims abstract description 21
- 230000004907 flux Effects 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 16
- 235000012431 wafers Nutrition 0.000 description 44
- 239000007789 gas Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- 230000008901 benefit Effects 0.000 description 4
- 238000010849 ion bombardment Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000003094 perturbing effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
Definitions
- the invention is related to plasma reactors for processing semiconductor wafers, and in particular confinement of the processing plasma in the reactor within a limited processing zone.
- Plasma reactors particularly radio frequency (RF) plasma reactors of the type employed in semiconductor wafer plasma processing in the manufacturing of microelectronic integrated circuits, confine a plasma over a semiconductor wafer in the processing chamber by walls defining a processing chamber.
- RF radio frequency
- the walls confining the plasma are subject to attack from ions in the plasma, typically, for example, by ion bombardment.
- attack can consume the material in the walls or introduce incompatible material from the chamber walls into the plasma process carried out on the wafer, thereby contaminating the process.
- incompatible material may be either the material of the chamber wall itself or may be material (e.g., polymer) previously deposited on the chamber walls during plasma processing, which can flake off or be sputtered off.
- the chamber walls are aluminum and the plasma process to be performed is plasma etching of silicon dioxide, then the material of the chamber wall itself, if sputtered into the plasma, is incompatible with the process and can destroy the integrity of the process.
- a wafer slit valve is conventionally provided in the chamber side wall for inserting the wafer into the chamber and withdrawing the wafer from the chamber.
- the slit valve must be unobstructed to permit efficient wafer ingress and egress.
- a pumping annulus is typically provided, the pumping annulus being an annular volume below the wafer pedestal coupled to a vacuum pump for maintaining a desired chamber pressure.
- the chamber is coupled to the pumping annulus through a gap between the wafer pedestal periphery and the chamber side wall.
- the flow of plasma into the pumping annulus permits the plasma to attack the interior surfaces or walls of the pumping annulus. This flow must be unobstructed in order for the vacuum pump to efficiently control the chamber pressure, and therefore the pedestal-to-side wall gap must be free of obstructions.
- the invention is embodied in a plasma reactor including a chamber enclosure having a process gas inlet and including a ceiling, a sidewall and a workpiece support pedestal capable of supporting a workpiece at a plasma processing location facing the ceiling, the workpiece processing location and ceiling defining a process region therebetween, the pedestal being spaced from said sidewall to define a pumping annulus therebetween having inner and outer walls, to permit process gas to be evacuated therethrough from the process region.
- the invention further includes a pair of opposing plasma confinement magnetic poles arranged adjacent the annulus within one of the inner and outer walls of the annulus, the opposing magnetic poles being axially displaced from one another the opposite poles being oriented to provide maximum magnetic flux in a direction across the annulus and a magnetic flux at the processing location less than the magnetic flux across the annulus.
- FIG. 1 is a cut-away side view of a plasma reactor in accordance with a first embodiment of the invention employing open magnetic circuits.
- FIG. 2 is an enlarged view of the magnetic confinement apparatus near the pedestal-to-side wall gap.
- FIG. 3 is an enlarged view of the magnetic confinement apparatus near the wafer slit valve.
- FIGS. 4A and 4B correspond to a side view of a plasma reactor in accordance with a preferred embodiment of the invention employing closed magnetic circuits having pairs of opposed magnets.
- FIG. 5 is a perspective view of a pair of opposing ring magnets juxtaposed across the pedestal-to-side wall gap.
- FIG. 6 is a perspective view of a pair of opposing magnets juxtaposed across the wafer slit valve.
- FIG. 7 is a cut-away side view of a plasma reactor in which the closed magnetic circuit is a single magnet whose opposing poles are juxtaposed across the pedestal-to-side wall gap and which are joined by a core extending across the pumping annulus.
- FIG. 8 is a top view of the single magnet of FIG. 7 and showing the gas flow holes through the core joining the opposite poles of the magnet.
- an RF plasma reactor for processing a semiconductor wafer has a vacuum chamber 10 enclosed by a cylindrical side wall 12 , a ceiling 14 and a floor 16 .
- a wafer pedestal 18 supports a semiconductor wafer 20 which is to be processed.
- a plasma precursor gas is injected into the chamber 10 through a gas injector 22 from a gas supply 24 .
- Plasma source power is coupled into the chamber 10 in any one of several ways.
- the reactor may be a “diode” configuration, in which case RF power is applied across a ceiling electrode 26 and the wafer pedestal 18 . This is accomplished by connecting the pedestal 18 and the ceiling electrode 26 to either one of two RF power sources 28 , 30 .
- a cylindrical side coil 32 wound around the chamber side wall 12 is connected to an RF power source 34 .
- a top coil 36 is connected to an RF power supply.
- the wafer pedestal 18 may have its own independently controllable RF power supply 28 so that ion bombardment energy at the wafer surface can be controlled independently of plasma density, determined by the RF power applied to the coil 32 or the coil 36 .
- a vacuum pump 40 is coupled to the chamber 10 through a passage 42 in the floor 16 .
- the annular space between the periphery of the wafer pedestal 18 and the floor 16 forms a pumping annulus 44 through which the vacuum pump 40 evacuates gas from the chamber 10 to maintain a desired processing pressure in the chamber 10 .
- the pumping annulus 44 is coupled to the interior of the chamber 10 through an annular gap 46 between the periphery of the wafer pedestal 18 and the chamber side wall 14 .
- the gap 46 is preferably free of obstructions.
- a conventional slit valve opening 50 of the type well-known in the art having a long thin opening in the chamber side wall 14 provides ingress and egress for a semiconductor wafer 52 to be placed upon and withdrawn from the wafer pedestal 18 .
- the walls 12 , 14 confining the plasma within the chamber 10 are subject to attack from plasma ions and charged radicals, typically, for example, by ion bombardment. Such attack can consume the material in the walls 12 , 14 or introduce incompatible material from the chamber walls 12 , 14 into the plasma process carried out on the wafer 52 , thereby contaminating the process.
- incompatible material may be either the material of the chamber wall itself or may be material (e.g., polymer) previously deposited on the chamber walls during plasma processing, which can flake off or be sputtered off. Plasma reaching the chamber walls can cause polymer deposition thereon.
- the openings from the interior portion of the chamber 10 permit the plasma to leak or flow from the chamber 10 .
- Such leakage can reduce plasma density near the openings 46 , 50 , thereby upsetting the plasma process carried out on the wafer 52 .
- leakage can permit the plasma to attack surfaces outside of the chamber interior.
- the flow of plasma into the pumping annulus 44 through the gap 46 permits the plasma to attack the interior surfaces or walls of the pumping annulus 44 .
- the designer must typically take into account not only the materials forming the chamber ceiling 12 and side wall 14 , but in addition must also take into account the materials forming the pumping annulus, including the lower portion 56 of the side wall 14 , the floor 16 and the bottom peripheral surface 58 of the wafer pedestal 18 , which complicates the design.
- Such a loss of plasma from the chamber 10 also reduces plasma density or requires more plasma source power to maintain a desired plasma density over the wafer 52 .
- a magnetic field perpendicular to the plane of the gap 46 and perpendicular to the direction of gas flow through the gap 46 is provided across the gap 46 .
- This is preferably accomplished by providing an opposing pair of magnetic poles 60 , 62 juxtaposed in facing relationship across the gap 46 .
- the magnetic pole 60 is the north pole of a magnet 64 located at the periphery of the wafer pedestal 18 while the magnetic pole 62 is the south pole of a magnet 66 next to the inner surface of the side wall 14 .
- the embodiment of FIG. 2 may be regarded as an open magnetic circuit because the returning magnetic field lines of flux 68 in FIG. 2 radiate outwardly as shown in the drawing.
- a magnetic field perpendicular to the plane of the slit valve opening 50 and perpendicular to the direction of gas flow through the slit valve opening 50 is provided across the slit valve opening 50 .
- the magnetic pole 70 is the north pole of a magnet 74 extending across the bottom edge of the slit valve opening 50 while the magnetic pole 72 is the south pole of a magnet 76 extending along the top edge of the slit valve opening 50 .
- the embodiment of FIG. 3 may also be regarded as an open magnetic circuit because the returning magnetic field lines of flux 78 in FIG. 3 radiate outwardly as shown in the drawing.
- FIG. 2 One potential problem with the returning lines of magnetic flux 68 (FIG. 2) and 78 (FIG. 3) is that some returning flux lines extend near the wafer 52 and may therefore distort or perturb plasma processing of the wafer 52 .
- a closed magnetic circuit one in which returning magnetic lines of flux do not extend into the chamber is employed to provide the opposing magnetic pole pairs 60 , 62 and 70 , 72 .
- the opposing magnetic poles 60 , 62 across the gap 44 are each a pole of a respective horseshoe ring magnet 80 , 82 concentric with the wafer pedestal 18 .
- the horseshoe ring magnet 80 has the north pole 60 and a south pole 81 while the horseshoe ring magnet has the south pole 62 and a north pole 83 .
- the poles 60 , 81 of the inner horseshoe ring magnet 80 are annuli connected at their inner radii by a magnetic cylindrical core annulus 85 .
- the poles 62 , 83 of the outer horseshoe ring magnet 82 are annuli connected at their outer radii by a magnetic cylindrical core annulus 86 .
- the magnetic circuit consisting of the inner and outer horseshoe ring magnets 80 , 82 is a closed circuit because the lines of magnetic flux between the opposing pole pairs 60 , 62 and 81 , 83 extend straight between the poles and, generally, do not curve outwardly, at least not to the extent of the outwardly curving returning lines of flux 68 , 78 of FIGS. 2 and 3.
- the opposing magnetic poles 70 , 72 across the slit valve opening 50 are each a pole of a respective long horseshoe magnet 90 , 92 extending along the length of the slit valve opening 50 .
- the long horseshoe magnet 90 extends along the top boundary of the slit valve opening 50 while the other horseshoe magnet extends along bottom edge of the slit valve opening 50 .
- the advantage of the closed magnetic circuit embodiment of FIG. 4 is that the magnetic field confining the plasma does not tend to interfere with plasma processing on the wafer surface.
- the lower annuli 81 , 83 of the two horseshoe ring magnets 80 , 82 are joined together as a single annulus by a magnetic core annulus 96 , so that the horseshoe ring magnets 80 , 82 constitute a single horseshoe ring magnet 94 having a north pole 60 and a south pole 62 .
- the core annulus 96 extends across the pumping annulus 44 and can be protected by a protective coating 98 such as silicon nitride.
- the core annulus 96 has plural holes 100 extending therethrough.
- One advantage of the invention is that plasma ions are excluded from the pumping annulus 44 .
- This is advantageous because the pumping annulus interior surfaces can be formed of any convenient material without regard to its susceptibility to attack by plasma ions or compatibility of its sputter by-products with the plasma process carried out on the wafer. This also eliminates reduction in plasma density due to loss of plasma ions through the pumping annulus.
- Another advantage is that gas flow through the pedestal-to-side wall gap 46 is not obstructed even though plasma is confined to the interior chamber 10 over the wafer. Furthermore, by so confining the plasma to a smaller volume (i.e., in the portion of the chamber 10 directly overlying the wafer 52 ), the plasma density over the wafer 52 is enhanced.
- a further advantage is that stopping plasma ions from exiting through the slit valve opening 50 eliminates loss of plasma density over portions of the wafer 52 adjacent the slit valve opening 50 .
- each of the magnetic pole pair 60 , 62 has a strength of 20 Gauss for a distance across the gap 46 of 5 cm, while each of the magnetic pole pair 70 , 72 has a strength of 20 Gauss for a width of the slit valve opening 50 of 2 cm.
- the invention has been described with reference to preferred embodiments in which the plasma confining magnets are protected from attack from plasma ions and processing gases by being at least partially encapsulated in the chamber walls or within the wafer pedestal or within a protective layer, in some embodiments (as for example, the embodiment of FIG. 6) the magnets may be protected by being located entirely outside of the chamber walls. Alternatively, if the reactor designer is willing to permit some plasma interaction with the magnets, magnets may be located inside the chamber in direct contact with the plasma, although this would not be preferred.
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Abstract
The invention is embodied in a plasma reactor including a chamber enclosure having a process gas inlet and including a ceiling, a sidewall and a workpiece support pedestal capable of supporting a workpiece at a plasma processing location facing the ceiling, the workpiece processing location and ceiling defining a process region therebetween, the pedestal being spaced from said sidewall to define a pumping annulus therebetween having inner and outer walls, to permit process gas to be evacuated therethrough from the process region. The invention further includes a pair of opposing plasma confinement magnetic poles arranged adjacent the annulus within one of the inner and outer walls of the annulus, the opposing magnetic poles being axially displaced from one another the opposite poles being oriented to provide maximum magnetic flux in a direction across the annulus and a magnetic flux at the processing location less than the magnetic flux across the annulus.
Description
- This is a continuation of U.S. application Ser. No. 09/521,799, filed Mar. 9, 2000, which is a continuation of U.S. application Ser. No. 09/263,001, filed Mar. 5, 1999, which is a continuation-in-part of U.S. application Ser. No. 08/766,119, filed Dec. 16, 1996, which is a continuation of now-abandoned U.S. application Ser. No. 08/590,998, filed Jan. 24, 1996.
- 1. Technical Field
- The invention is related to plasma reactors for processing semiconductor wafers, and in particular confinement of the processing plasma in the reactor within a limited processing zone.
- 2. Background Art
- Plasma reactors, particularly radio frequency (RF) plasma reactors of the type employed in semiconductor wafer plasma processing in the manufacturing of microelectronic integrated circuits, confine a plasma over a semiconductor wafer in the processing chamber by walls defining a processing chamber. Such an approach for plasma confinement has several inherent problems where employed in plasma reactors for processing semiconductor wafers.
- First, the walls confining the plasma are subject to attack from ions in the plasma, typically, for example, by ion bombardment. Such attack can consume the material in the walls or introduce incompatible material from the chamber walls into the plasma process carried out on the wafer, thereby contaminating the process. Such incompatible material may be either the material of the chamber wall itself or may be material (e.g., polymer) previously deposited on the chamber walls during plasma processing, which can flake off or be sputtered off. As one example, if the chamber walls are aluminum and the plasma process to be performed is plasma etching of silicon dioxide, then the material of the chamber wall itself, if sputtered into the plasma, is incompatible with the process and can destroy the integrity of the process.
- Second, it is necessary to provide certain openings in the chamber walls and, unfortunately, plasma tends to leak or flow from the chamber through these openings. Such leakage can reduce plasma density near the openings, thereby upsetting the plasma process carried out on the wafer. Also, such leakage can permit the plasma to attack surfaces outside of the chamber interior. As one example of an opening through which plasma can leak from the chamber, a wafer slit valve is conventionally provided in the chamber side wall for inserting the wafer into the chamber and withdrawing the wafer from the chamber. The slit valve must be unobstructed to permit efficient wafer ingress and egress. As another example, a pumping annulus is typically provided, the pumping annulus being an annular volume below the wafer pedestal coupled to a vacuum pump for maintaining a desired chamber pressure. The chamber is coupled to the pumping annulus through a gap between the wafer pedestal periphery and the chamber side wall. The flow of plasma into the pumping annulus permits the plasma to attack the interior surfaces or walls of the pumping annulus. This flow must be unobstructed in order for the vacuum pump to efficiently control the chamber pressure, and therefore the pedestal-to-side wall gap must be free of obstructions.
- It is an object of the invention to confine the plasma within the chamber without relying entirely on the chamber walls and in fact to confine the plasma in areas where the chamber walls to not confine the plasma. It is a related object of the invention to prevent plasma from leaking or flowing through openings necessarily provided the chamber walls. It is an auxiliary object to so prevent such plasma leakage without perturbing the plasma processing of the semiconductor wafer.
- It is a general object of the invention to shield selected surfaces of the reactor chamber interior from the plasma.
- It is a specific object of one embodiment of the invention to shield the interior surface of the reactor pumping annulus from the plasma by preventing plasma from flowing through the gap between the wafer pedestal and the chamber side wall without obstructing free flow of charge-neutral gas through the gap.
- It is a specific object of another embodiment of the invention to prevent plasma from flowing through the wafer slit valve in the chamber side wall without obstructing the ingress and egress of the wafer through the wafer slit valve.
- The invention is embodied in a plasma reactor including a chamber enclosure having a process gas inlet and including a ceiling, a sidewall and a workpiece support pedestal capable of supporting a workpiece at a plasma processing location facing the ceiling, the workpiece processing location and ceiling defining a process region therebetween, the pedestal being spaced from said sidewall to define a pumping annulus therebetween having inner and outer walls, to permit process gas to be evacuated therethrough from the process region. The invention further includes a pair of opposing plasma confinement magnetic poles arranged adjacent the annulus within one of the inner and outer walls of the annulus, the opposing magnetic poles being axially displaced from one another the opposite poles being oriented to provide maximum magnetic flux in a direction across the annulus and a magnetic flux at the processing location less than the magnetic flux across the annulus.
- FIG. 1 is a cut-away side view of a plasma reactor in accordance with a first embodiment of the invention employing open magnetic circuits.
- FIG. 2 is an enlarged view of the magnetic confinement apparatus near the pedestal-to-side wall gap.
- FIG. 3 is an enlarged view of the magnetic confinement apparatus near the wafer slit valve.
- FIGS. 4A and 4B correspond to a side view of a plasma reactor in accordance with a preferred embodiment of the invention employing closed magnetic circuits having pairs of opposed magnets.
- FIG. 5 is a perspective view of a pair of opposing ring magnets juxtaposed across the pedestal-to-side wall gap.
- FIG. 6 is a perspective view of a pair of opposing magnets juxtaposed across the wafer slit valve.
- FIG. 7 is a cut-away side view of a plasma reactor in which the closed magnetic circuit is a single magnet whose opposing poles are juxtaposed across the pedestal-to-side wall gap and which are joined by a core extending across the pumping annulus.
- FIG. 8 is a top view of the single magnet of FIG. 7 and showing the gas flow holes through the core joining the opposite poles of the magnet.
- Conventional Reactor Elements:
- Referring to FIG. 1, an RF plasma reactor for processing a semiconductor wafer has a
vacuum chamber 10 enclosed by acylindrical side wall 12, aceiling 14 and afloor 16. Awafer pedestal 18 supports asemiconductor wafer 20 which is to be processed. A plasma precursor gas is injected into thechamber 10 through agas injector 22 from agas supply 24. Plasma source power is coupled into thechamber 10 in any one of several ways. For example, the reactor may be a “diode” configuration, in which case RF power is applied across aceiling electrode 26 and thewafer pedestal 18. This is accomplished by connecting thepedestal 18 and theceiling electrode 26 to either one of twoRF power sources cylindrical side coil 32 wound around thechamber side wall 12 is connected to anRF power source 34. Alternatively to the foregoing, or in addition thereto, atop coil 36 is connected to an RF power supply. As is conventional, thewafer pedestal 18 may have its own independently controllableRF power supply 28 so that ion bombardment energy at the wafer surface can be controlled independently of plasma density, determined by the RF power applied to thecoil 32 or thecoil 36. - A
vacuum pump 40 is coupled to thechamber 10 through apassage 42 in thefloor 16. The annular space between the periphery of thewafer pedestal 18 and thefloor 16 forms a pumpingannulus 44 through which thevacuum pump 40 evacuates gas from thechamber 10 to maintain a desired processing pressure in thechamber 10. Thepumping annulus 44 is coupled to the interior of thechamber 10 through anannular gap 46 between the periphery of thewafer pedestal 18 and thechamber side wall 14. In order for thepump 40 to perform efficiently, thegap 46 is preferably free of obstructions. - A conventional slit valve opening50 of the type well-known in the art having a long thin opening in the
chamber side wall 14 provides ingress and egress for a semiconductor wafer 52 to be placed upon and withdrawn from thewafer pedestal 18. - The
walls chamber 10 are subject to attack from plasma ions and charged radicals, typically, for example, by ion bombardment. Such attack can consume the material in thewalls chamber walls - The openings from the interior portion of the
chamber 10, including the pedestal-to-side wall gap 46 and theslit valve opening 50, permit the plasma to leak or flow from thechamber 10. Such leakage can reduce plasma density near theopenings annulus 44 through thegap 46 permits the plasma to attack the interior surfaces or walls of the pumpingannulus 44. Thus, the designer must typically take into account not only the materials forming thechamber ceiling 12 andside wall 14, but in addition must also take into account the materials forming the pumping annulus, including thelower portion 56 of theside wall 14, thefloor 16 and the bottomperipheral surface 58 of thewafer pedestal 18, which complicates the design. Such a loss of plasma from thechamber 10 also reduces plasma density or requires more plasma source power to maintain a desired plasma density over the wafer 52. - Magnetic Confinement:
- In order to prevent plasma from flowing from the
chamber 10 into the pumping annulus, a magnetic field perpendicular to the plane of thegap 46 and perpendicular to the direction of gas flow through thegap 46 is provided across thegap 46. This is preferably accomplished by providing an opposing pair ofmagnetic poles gap 46. In the embodiment according to FIG. 2, themagnetic pole 60 is the north pole of amagnet 64 located at the periphery of thewafer pedestal 18 while themagnetic pole 62 is the south pole of amagnet 66 next to the inner surface of theside wall 14. The embodiment of FIG. 2 may be regarded as an open magnetic circuit because the returning magnetic field lines offlux 68 in FIG. 2 radiate outwardly as shown in the drawing. - In order to prevent plasma from flowing from the
chamber 10 through theslit valve opening 50, a magnetic field perpendicular to the plane of theslit valve opening 50 and perpendicular to the direction of gas flow through theslit valve opening 50 is provided across theslit valve opening 50. This is preferably accomplished by providing an opposing pair ofmagnetic poles slit valve opening 50. In the embodiment according to FIG. 3, themagnetic pole 70 is the north pole of amagnet 74 extending across the bottom edge of the slit valve opening 50 while themagnetic pole 72 is the south pole of amagnet 76 extending along the top edge of theslit valve opening 50. The embodiment of FIG. 3 may also be regarded as an open magnetic circuit because the returning magnetic field lines offlux 78 in FIG. 3 radiate outwardly as shown in the drawing. - One potential problem with the returning lines of magnetic flux68 (FIG. 2) and 78 (FIG. 3) is that some returning flux lines extend near the wafer 52 and may therefore distort or perturb plasma processing of the wafer 52. In order to minimize or eliminate such a problem, a closed magnetic circuit (one in which returning magnetic lines of flux do not extend into the chamber) is employed to provide the opposing magnetic pole pairs 60, 62 and 70, 72. For example, in the embodiment of FIGS. 4 and 5, the opposing
magnetic poles gap 44 are each a pole of a respectivehorseshoe ring magnet wafer pedestal 18. Thehorseshoe ring magnet 80 has thenorth pole 60 and asouth pole 81 while the horseshoe ring magnet has thesouth pole 62 and anorth pole 83. Thepoles horseshoe ring magnet 80 are annuli connected at their inner radii by a magneticcylindrical core annulus 85. Similarly, thepoles horseshoe ring magnet 82 are annuli connected at their outer radii by a magneticcylindrical core annulus 86. The magnetic circuit consisting of the inner and outerhorseshoe ring magnets flux - In the embodiment of FIGS. 4A, 4B and6, the opposing
magnetic poles slit valve opening 50 are each a pole of a respectivelong horseshoe magnet slit valve opening 50. Thelong horseshoe magnet 90 extends along the top boundary of the slit valve opening 50 while the other horseshoe magnet extends along bottom edge of theslit valve opening 50. - The advantage of the closed magnetic circuit embodiment of FIG. 4 is that the magnetic field confining the plasma does not tend to interfere with plasma processing on the wafer surface.
- In the embodiment of FIGS. 7 and 8, the
lower annuli horseshoe ring magnets magnetic core annulus 96, so that thehorseshoe ring magnets horseshoe ring magnet 94 having anorth pole 60 and asouth pole 62. Thecore annulus 96 extends across the pumpingannulus 44 and can be protected by aprotective coating 98 such as silicon nitride. In order to allow gas to pass through the pumpingannulus 44, thecore annulus 96 hasplural holes 100 extending therethrough. - One advantage of the invention is that plasma ions are excluded from the pumping
annulus 44. This is advantageous because the pumping annulus interior surfaces can be formed of any convenient material without regard to its susceptibility to attack by plasma ions or compatibility of its sputter by-products with the plasma process carried out on the wafer. This also eliminates reduction in plasma density due to loss of plasma ions through the pumping annulus. Another advantage is that gas flow through the pedestal-to-side wall gap 46 is not obstructed even though plasma is confined to theinterior chamber 10 over the wafer. Furthermore, by so confining the plasma to a smaller volume (i.e., in the portion of thechamber 10 directly overlying the wafer 52), the plasma density over the wafer 52 is enhanced. A further advantage is that stopping plasma ions from exiting through theslit valve opening 50 eliminates loss of plasma density over portions of the wafer 52 adjacent theslit valve opening 50. - In one example, each of the
magnetic pole pair gap 46 of 5 cm, while each of themagnetic pole pair - While the invention has been described with reference to preferred embodiments in which the plasma confining magnets are protected from attack from plasma ions and processing gases by being at least partially encapsulated in the chamber walls or within the wafer pedestal or within a protective layer, in some embodiments (as for example, the embodiment of FIG. 6) the magnets may be protected by being located entirely outside of the chamber walls. Alternatively, if the reactor designer is willing to permit some plasma interaction with the magnets, magnets may be located inside the chamber in direct contact with the plasma, although this would not be preferred.
- While the invention has been described in detail by specific reference to preferred embodiments, it is understood that variations and modifications thereof may be made without departing from the true spirit and scope of the invention.
Claims (14)
1. A plasma reactor comprising:
a chamber enclosure having a process gas inlet and including a ceiling, a sidewall and a workpiece support pedestal capable of supporting a workpiece at a plasma processing location facing the ceiling, said workpiece processing location and ceiling defining a process region therebetween, said pedestal being spaced from said sidewall to define a pumping annulus therebetween having inner and outer walls, to permit process gas to be evacuated therethrough from the process region;
a pair of opposing plasma confinement magnetic poles arranged adjacent said annulus within one of said inner and outer walls of said annulus, the opposing magnetic poles being axially displaced from one another said opposite poles being oriented to provide maximum magnetic flux in a direction across said annulus and a magnetic flux at said processing location less than the magnetic flux across said annulus.
2. The reactor of further comprising a connector of magnetically permeable material within said one wall connecting said opposing wall.
claim 1
3. The reactor of wherein said pair of poles comprise a horseshoe magnet.
claim 1
4. The reactor of wherein said magnetic poles are ring shaped and are concentric with said annulus.
claim 2
5. The reactor of wherein said connector is ring shaped and concentric with said annulus.
claim 4
6. The reactor of wherein said magnetic poles are within said inner wall.
claim 1
7. The reactor of wherein said magnetic poles are within said outer wall.
claim 1
8. The reactor of , in which said horseshoe magnet is ring-shaped and concentric with said annulus.
claim 3
9. The reactor of , in which said horseshoe magnet is within one of said inner and outer walls.
claim 8
10. The reactor of in which the opposite poles are connected by a magnetically permeable connector.
claim 11
11. The reactor of which further includes a horseshoe magnet arrangement having a pair of legs respectively terminating in said opposite poles, with at least one ring magnet comprising one leg of the horseshoe arrangement, and with the remainder of the arrangement being of magnetically permeable material.
claim 1
12. A plasma reactor comprising:
a chamber having a process gas inlet and enclosing a plasma process region;
a workpiece support pedestal within said chamber and capable of supporting a workpiece at a processing location open to said plasma process region, said support pedestal and chamber defining an annulus therebetween having opposed walls to permit gas to be evacuated therethrough from said process region;
a ring-shaped horseshoe magnet positioned adjacent and about said annulus within one of said inner and outer walls of said annulus, the horseshoe magnet being oriented to direct its maximum magnetic flux across said annulus and a reduced magnetic flux elsewhere.
13. The reactor of wherein said horseshoe magnet is within a radially inner one of said opposed walls.
claim 1
14. The reactor of wherein said horseshoe magnet is within a radially outer one of said opposed walls.
claim 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/773,409 US6402885B2 (en) | 1996-01-24 | 2001-01-31 | Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US59099896A | 1996-01-24 | 1996-01-24 | |
US08/766,119 US6030486A (en) | 1996-01-24 | 1996-12-16 | Magnetically confined plasma reactor for processing a semiconductor wafer |
US09/263,001 US6471822B1 (en) | 1996-01-24 | 1999-03-05 | Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma |
US09/521,799 US6503367B1 (en) | 1996-01-24 | 2000-03-09 | Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma |
US09/773,409 US6402885B2 (en) | 1996-01-24 | 2001-01-31 | Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US09/521,799 Continuation US6503367B1 (en) | 1996-01-24 | 2000-03-09 | Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma |
Publications (2)
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US20010004920A1 true US20010004920A1 (en) | 2001-06-28 |
US6402885B2 US6402885B2 (en) | 2002-06-11 |
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Application Number | Title | Priority Date | Filing Date |
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US08/766,119 Expired - Fee Related US6030486A (en) | 1996-01-24 | 1996-12-16 | Magnetically confined plasma reactor for processing a semiconductor wafer |
US09/521,799 Expired - Fee Related US6503367B1 (en) | 1996-01-24 | 2000-03-09 | Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma |
US09/773,409 Expired - Fee Related US6402885B2 (en) | 1996-01-24 | 2001-01-31 | Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
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US08/766,119 Expired - Fee Related US6030486A (en) | 1996-01-24 | 1996-12-16 | Magnetically confined plasma reactor for processing a semiconductor wafer |
US09/521,799 Expired - Fee Related US6503367B1 (en) | 1996-01-24 | 2000-03-09 | Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma |
Country Status (6)
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US (3) | US6030486A (en) |
EP (2) | EP0786794B1 (en) |
JP (1) | JPH09219397A (en) |
KR (1) | KR100362596B1 (en) |
DE (1) | DE69628903T2 (en) |
TW (1) | TW303480B (en) |
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- 1996-12-24 EP EP96309551A patent/EP0786794B1/en not_active Expired - Lifetime
- 1996-12-24 DE DE69628903T patent/DE69628903T2/en not_active Expired - Fee Related
- 1996-12-24 EP EP00121003A patent/EP1071113A2/en not_active Withdrawn
-
1997
- 1997-01-21 KR KR1019970001567A patent/KR100362596B1/en not_active IP Right Cessation
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-
2000
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Cited By (3)
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US20080066785A1 (en) * | 2003-12-01 | 2008-03-20 | Applied Materials, Inc. | Method of refurbishing a magnet assembly for plasma process chamber |
US20130032574A1 (en) * | 2011-08-02 | 2013-02-07 | Zhongdu Liu | Capacitive-coupled plasma processing apparatus and method for processing substrate |
US9230781B2 (en) * | 2011-08-02 | 2016-01-05 | Advanced Micro-Fabrication Equipment Inc, Shanghai | Capacitive-coupled plasma processing apparatus and method for processing substrate |
Also Published As
Publication number | Publication date |
---|---|
US6503367B1 (en) | 2003-01-07 |
KR100362596B1 (en) | 2003-02-19 |
US6030486A (en) | 2000-02-29 |
EP0786794A2 (en) | 1997-07-30 |
US6402885B2 (en) | 2002-06-11 |
JPH09219397A (en) | 1997-08-19 |
EP0786794A3 (en) | 1998-01-21 |
DE69628903D1 (en) | 2003-08-07 |
EP0786794B1 (en) | 2003-07-02 |
TW303480B (en) | 1997-04-21 |
KR970060417A (en) | 1997-08-12 |
DE69628903T2 (en) | 2004-06-03 |
EP1071113A2 (en) | 2001-01-24 |
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