JP3896180B2 - Plasma processing equipment - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a plasma processing apparatus, and more particularly to a plasma processing apparatus suitable for a dry etching apparatus, a plasma CVD apparatus, a sputtering apparatus, and a surface modification apparatus.
[0002]
[Prior art]
As a plasma source of a plasma processing apparatus for substrate processing, an inductively coupled plasma (hereinafter referred to as “ICP”) that can generate a high-density plasma at a constant pressure or a helicon wave is excited and propagated. A helicon wave plasma (hereinafter referred to as “helicon”) that generates plasma is known. ICP typically generates plasma using an antenna to which high frequency power is applied. A helicon usually includes an antenna similar to an ICP and is configured so that a helicon wave can propagate into plasma in combination with a magnetic circuit.
[0003]
An example of the configuration of a conventional plasma processing apparatus will be described with reference to FIG. This plasma processing apparatus is composed of an ICP apparatus and a helicon apparatus. The apparatus includes a substrate processing chamber 101 capable of maintaining the inside in a reduced pressure state, a substrate support mechanism 102 that supports the substrate 103 in the substrate processing chamber 101, a gas introduction mechanism 104 that introduces gas into the substrate processing chamber 101, An annular antenna 105 for generating plasma inside the substrate processing chamber 101, a high-frequency power source 106 that supplies high-frequency power to the antenna 105, and matching when high-frequency power is supplied from the high-frequency power source 106 to the antenna 105. The matching circuit 107 is provided. The substrate processing chamber 101 is formed of a non-metal part 101a such as quartz and a metal part 101b made of aluminum or stainless steel. Solenoid coils 108 and 109 for exciting helicon waves are disposed around the antenna 105. Further, a permanent magnet 110 is disposed around the substrate processing chamber 101 as necessary. The permanent magnet 110 is provided on the wall surface of the substrate processing chamber 101 to suppress plasma loss. With the above configuration, a magnetic field is generated inside the substrate processing chamber 101 by supplying DC power to each of the solenoid coils 108 and 109 from the DC power sources 111 and 112, and in addition to normal ICP plasma, helicon waves are generated. The utilized plasma can be generated. In FIG. 9, an exhaust mechanism, a substrate transport mechanism for transporting the substrate 103, a substrate temperature adjusting mechanism, a wall surface temperature adjusting mechanism for the substrate processing chamber 101, and a gas introducing mechanism for maintaining the inside of the substrate processing chamber 101 in a reduced pressure state. Illustration of a gas supply mechanism for supplying gas up to 104 is omitted for convenience of explanation.
[0004]
Next, a procedure for processing a substrate using the plasma processing apparatus will be described. The substrate 103 is transferred into the substrate processing chamber 101 by a substrate transfer mechanism (not shown), and the substrate 103 is fixed on the substrate support mechanism 102. The inside of the substrate processing chamber 101 is depressurized to a predetermined pressure by an exhaust mechanism (not shown), and further, a gas supplied from a gas supply mechanism (not shown) is introduced into the substrate processing chamber 101 via the gas introduction mechanism 104 to reach a predetermined pressure. Retained. A high frequency is applied to the antenna 105 from the high frequency power source 106 through the matching circuit 107, plasma is generated inside the substrate processing chamber 101, and the substrate 103 is processed with this plasma. Further, when exciting a helicon wave, a direct current is passed through the solenoid coils 108 and 109 by the direct current power sources 111 and 112 while a high frequency is applied, and a magnetic field is formed inside the substrate processing chamber 101. At this time, normally, a reverse current flows through the solenoid coils 108 and 109.
[0005]
[Problems to be solved by the invention]
The above-described conventional plasma processing apparatus raises the following problems. With regard to the configuration of the apparatus related to the helicon, the current distribution of ions incident on the substrate 103 can be controlled by changing the current values of the solenoid coils 108 and 109. On the other hand, the antenna 105 is usually designed to be smaller than the size of the substrate 103. In the conventional apparatus, the size of the antenna and the capability of the matching circuit 107 related thereto can be made relatively small. . However, since the conventional apparatus is an apparatus that can handle a substrate of φ200 mm (6 inches), obtaining a condition with a good distribution of ion current density on a substrate of φ300 mm (8 inches) It turned out that it was difficult only by changing the current value.
[0006]
The reason is that high density plasma is generated in the vicinity of the antenna 105 inside the non-metal portion 101a, but plasma is not generated in the vicinity of the outer periphery of the substrate 103, and diffusion of the high density plasma from the region near the antenna. It is that the ion current density cannot be made sufficiently high only by itself. Therefore, when a conventional plasma processing apparatus is used, when processing a substrate larger than φ200 mm, the uniformity of in-plane processing of the substrate becomes poor.
[0007]
An object of the present invention is to solve the above-mentioned problem, and a plasma processing apparatus capable of enhancing the uniformity of ion current density distribution necessary for processing a substrate larger than φ200 mm, and further a substrate larger than φ300 mm. It is to provide.
[0008]
[Means and Actions for Solving the Problems]
In order to achieve the above object, a plasma processing apparatus according to the present invention is configured as follows.
[0009]
The plasma processing apparatus according to the first aspect of the present invention (corresponding to claim 1) has a configuration for processing an object to be processed (substrate) disposed in a container (depressurized container) whose inside is in a depressurized state with plasma. This container is connected to a power introduction container made of a dielectric material in which an annular antenna is arranged around the outside and plasma is generated in the inner space, and communicated with the inner space of the power introduction container. A processing container in which a processing object is disposed, configured to generate plasma in the power introduction container with high-frequency power supplied to the annular antenna, and to process the object to be processed with the plasma diffused into the processing container; Further, the annular antenna is disposed around the outside of the power introduction container side portion in the vicinity of the boundary where the power introduction container and the processing container are connected to each of the internal space on the power introduction container side and the internal space on the processing container side. Has an edge towards Te, a high density region of the plasma in the interior space of the power lead container side and the processing vessel side is to be generated by the loop antenna.
[0010]
In the first aspect of the present invention, the shape of the annular antenna related to the ICP and the helicon, and the arrangement relationship of the annular antenna with respect to the power introduction container are configured as described above, thereby corresponding to the inner edge and the outer edge of the annular antenna. A high-density plasma region can be created in the internal space. Thus, the diffusion of the plasma generated in the power introduction container to the processing container and the high-density plasma generated in the internal space on the processing container side allow the processing container in which the object to be processed is arranged. Plasma having a sufficient density can be generated in the outer space of the workpiece in the internal space. In particular, in a film-forming process using plasma on a substrate having a diameter of 300 mm or more, plasma having a sufficient density can be given to a space in the vicinity of the outer peripheral portion in addition to the central portion of the substrate. Distribution uniformity is enhanced.
[0011]
A plasma processing apparatus according to a second aspect of the present invention (corresponding to claim 2) is the plasma processing apparatus according to the first aspect, wherein an enlarged diameter portion is formed in a power introduction container side portion in the vicinity of the boundary portion, and the annular antenna is It is arranged around. By arranging in an appropriate positional relationship with respect to the outer surface of the diameter-enlarged portion, the inner edge portion and the outer edge portion of the annular antenna for supplying high-frequency power are connected to the outer surface of the cylindrical wall portion of the power introduction container and the processing container. It can arrange | position corresponding to the outer surface of the disk-shaped flange part of the electric power introduction container corresponding to the internal space of the side.
[0012]
In the plasma processing apparatus according to the third aspect of the present invention (corresponding to claim 3), in the first or second aspect, each of the two edges of the annular antenna faces at an angle perpendicular to the outer surface of the power introduction container. It is characterized by that. By arranging the edge of the annular antenna in such an arrangement, it is possible to prevent sputtering of the inner surface of the power introduction container.
[0013]
The plasma processing apparatus according to the fourth aspect of the present invention (corresponding to claim 4) is characterized in that, in each of the above inventions, the position of the outer edge of the annular antenna corresponds to the position of the outer peripheral portion of the substrate. This makes it possible to create a high-density plasma region particularly near the outer periphery of the substrate.
[0014]
A plasma processing apparatus according to a fifth aspect of the present invention (corresponding to claim 5) is a structure for processing an object to be processed disposed in a container whose inside is in a decompressed state with plasma, and the container is a power introduction wall. An annular antenna for generating plasma in the interior space of the container is disposed outside the power introduction wall, and the annular antenna has a U-shaped or U-shaped cross-section in the radial direction. The open side of the cross-sectional shape of the antenna is disposed toward the power introduction wall, and at least two annular edges in the radial cross-sectional shape of the annular antenna are connected to the internal space of the container via the power introduction wall. Towards different positions, the annular antenna is configured to generate a high density region of plasma in at least two locations in the interior space of the vessel. In this configuration, the container does not have a special power introduction container, and high-frequency power can be directly introduced into the processing container through the power introduction wall to create a high-density plasma region in the processing container.
[0015]
A plasma processing apparatus according to a sixth aspect of the present invention (corresponding to claim 6 ) is the plasma processing apparatus according to the fifth aspect, wherein an annular magnetic circuit is provided near the outer edge of the annular antenna, and the interior of the container is provided by the magnetic circuit. A region for restraining charged particles is formed. Thereby, charged particles can be trapped in a specific region, and the plasma density in the region can be increased. Furthermore, the confinement effect of charged particles can be enhanced and plasma diffusion can be suppressed.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.
[0017]
The first embodiment will be described with reference to FIGS. FIG. 1 is a diagram showing an internal structure of a decompression vessel of a plasma processing apparatus for substrate processing and a configuration of a part related thereto, FIG. 2 is an enlarged view of a main part in FIG. 1, and FIG. 3 is a graph showing characteristics.
[0018]
In FIG. 1, the plasma processing apparatus includes an apparatus configuration related to ICP and an apparatus configuration related to helicon. The container 11 is held in a predetermined reduced pressure state by an exhaust mechanism (not shown) in the internal space. Hereinafter, the container 11 is referred to as a “depressurized container”. In the decompression container 11 according to the present embodiment, the internal space consists of two spaces. One is a space in which the substrate support mechanism 12 is disposed, and is formed by a processing container 13 made of metal such as aluminum or stainless steel. The side wall of the processing container 13 is formed in a cylindrical shape, for example. A substrate 14 to be processed is disposed on the substrate support mechanism 12. This substrate 14 is, for example, a large substrate having a diameter of 300 mm. The other is a space in which plasma is generated, and is formed by a container 15 mainly made of a dielectric such as quartz capable of introducing a high frequency into the space. The container 15 has an upper end wall 15a made of metal, and other parts made of a dielectric. The side wall 15b of the container 15 located on the upper side is formed in a substantially cylindrical shape, for example. The container 15 is attached and fixed to the upper wall 13a of the processing container 13. The diameter of the side wall 15b of the container 15 is set to be smaller than the diameter of the side wall 13b of the processing container 13. The internal space of the processing container 13 communicates with the internal space of the container 15. Therefore, the plasma generated in the internal space of the container 15 diffuses, moves downward, and proceeds to the internal space of the processing container 13. The substrate 14 disposed in the internal space of the processing container 13 is in a position facing the internal space of the container 15. The axis of the cylindrical side wall of the container 15 and the center of the substrate 14 are located coaxially. In FIG. 2, A is a central axis. The plasma diffused from the container 15 to the processing container 13 moves to the front space of the substrate 14.
[0019]
In the configuration of the present embodiment, the diameter gradually increases from the cylindrical side wall 15b of the container 15 to the processing container 13 side at the boundary between the processing container 13 and the container 15 in the connected relationship. A portion 15c (hereinafter referred to as “diameter enlarged portion 15c”) is formed. The lower peripheral edge of the container 15 is flush with the upper wall of the processing container 13. The container 15 is composed of the above-described cylindrical side wall 15b, a disc-shaped flange portion 15d on a concentric circle having a diameter larger than that of the cylindrical side wall, and a diameter enlarged portion 15c located in the middle thereof.
[0020]
An antenna 16 is disposed around the enlarged diameter portion 15 c of the container 15. The antenna 16 has an annular shape with a part open, and has a desired length in the axial direction, and the diameter gradually increases linearly toward the processing container 13 as shown in FIGS. 1 and 2. It is formed as follows. Although a support mechanism for the antenna 16 is not shown, a well-known mechanism is used. As shown in FIG. 2, the feature of the antenna 16 corresponds to the cylindrical side wall 15b of the container 15 as the inner edge located on the upper side in FIG. The outer edge located at is located so as to correspond to the disk-shaped flange portion 15 d of the container 15 as it goes to the internal space of the processing container 13.
[0021]
With respect to the above configuration, a high-frequency power source 17 that supplies high-frequency power to the antenna 16, a matching circuit 18 for matching when high-frequency power is supplied from the high-frequency power source 17 to the antenna 16, and the inside of the processing container 13 A gas introduction mechanism 19 for introducing gas into the space, solenoid coils 20 and 21 arranged around the antenna 16, and a permanent magnet 22 arranged around the processing container 13 are provided. Solenoid coils 20 and 21 excite helicon waves, and DC power is supplied from DC power sources 23 and 24. The permanent magnet 22 is provided to suppress the loss of plasma on the wall surface of the processing container 13. In FIG. 1, an exhaust mechanism for holding the inside in a reduced pressure state, a substrate transport mechanism, a substrate temperature adjustment mechanism, a wall temperature adjustment mechanism for a processing vessel, a gas supply mechanism for supplying gas to a gas introduction mechanism, etc. Are omitted for the sake of convenience and explanation.
[0022]
In the above plasma processing apparatus, the substrate 14 is transferred into the processing container 13 by the substrate transfer mechanism, the substrate 14 is disposed on the substrate support mechanism 12, and the substrate 14 is fixed. FIG. 1 shows a state in which the substrate 14 is fixed. Next, the inside of the processing container 13 and the container 15 is reduced to a required pressure by the exhaust mechanism, the gas supplied from the gas supply system is introduced into the processing container 13 through the gas introduction mechanism 19, and the inside is set to the required pressure. Hold. A high frequency is applied from the high frequency power supply 17 to the antenna 16 through the matching circuit 18 to generate plasma in the container 15 and in the vicinity of the processing container 13 on the container 15 side. Plasma generated inside the container 15 and the like diffuses into the internal space of the processing container 13. The substrate 14 is processed by the plasma thus diffused.
[0023]
In the plasma processing apparatus according to the above-described embodiment, as described above, the antenna 16 is disposed around the container 15 side portion in the vicinity of the boundary between the container 15 and the processing container 13, that is, around the enlarged diameter portion 15c. As shown in FIG. 2, the enlarged-diameter portion 15c is inclined in its cross-sectional shape. As a result, the antenna 16 arranged in parallel to the inclined wall portion has a cylindrical shape on both edges in the cross-sectional shape. It is adjacent to the outer surface of the shaped side wall 15b and the outer surface of the disc-shaped flange portion 15d. That is, the inner edge of the annular antenna 16 is adjacent to the outer surface of the cylindrical side wall 15 b of the container 15, and the outer edge is adjacent to the disk-shaped flange portion 15 d of the container 15.
[0024]
This will be described in more detail. The inner radius of the cylindrical side wall 15b of the container 15 is preferably set to a length of about 1/5 to 3/5 times the radius of the substrate 14, and the distance between the inner surface of the cylindrical side wall and the innermost portion of the antenna 16 is set. Is preferably within 30 mm. The outermost portion of the antenna 16 is preferably a distance of about 3/5 to 1 times the radius of the substrate 14 from the central axis A of the cylindrical side wall. From such a positional relationship, the inclination angle in the cross section of the antenna 16 shown in FIG. 2 is preferably maintained at about 30 to 60 °.
[0025]
When high-frequency power is supplied to the antenna 16 disposed in the positional relationship as described above with respect to the container 15 and the processing container 13 of the decompression container 11, an internal space corresponding to the inner edge and the outer edge of the antenna 16, that is, The high-density plasmas 25 and 26 on the concentric axes having different diameters are generated in the inner space of the container 15 corresponding to the inner edge and the inner space of the processing container 13 corresponding to the outer edge. For this reason, even when processing a large substrate 14, it is possible to eliminate the decrease in the ion current density at the outer peripheral portion of the substrate as in the prior art. As a result, plasma 27 with good uniformity in the substrate surface is generated in the front space of the substrate 14.
[0026]
The radial distribution of ion current density measured at a height of about 30 mm from the substrate 14 is shown in FIG. The characteristics 31 and 32 show the radial distribution of the ion current density in the case of the device related to the helicon obtained when the current values of the solenoid coils 20 and 21 are changed. The characteristic 33 is a radial distribution of ion current density obtained in the case of the first embodiment.
[0027]
As is clear from the comparison of these characteristics, the reduction in the ion current density at the outer periphery of the substrate, which is a problem in the conventional plasma processing apparatus, is suppressed in the apparatus of this embodiment. Furthermore, according to the apparatus according to the present embodiment, it is possible to apply DC power from the DC power sources 23 and 24 to the solenoid coils 20 and 21 to control and optimize the radial distribution of ion current density. The radial distribution of ion current density can also be controlled and optimized by optimizing the positional relationship between each edge of the antenna 16 and the container 11. Therefore, the DC power supply and the solenoid coil are not always necessary, and can be compact and reduce the cost.
[0028]
FIG. 4 is a view similar to FIG. 2 and shows a second embodiment obtained by modifying a part of the first embodiment. In this embodiment, the cross-sectional shape of the antenna 116 is changed, and as shown in the figure, each edge of the antenna 116 is perpendicular to the outer surface of the cylindrical side wall 15b of the container 15 and the outer surface of the disc-shaped flange portion 15d. It has an L-shaped longitudinal section so as to go to. Other configurations are the same as those of the first embodiment, and substantially the same elements are denoted by the same reference numerals. Corresponding to each edge of the antenna 116, regions of high-density plasma 25, 26 are formed in the internal space.
[0029]
Even with an antenna having such a shape, an ion current density similar to that of the characteristic 33 shown in FIG. 3 can be obtained. In the case of the present embodiment, since the portion other than both edges of the antenna 116 is separated from the container 15 by adopting such a shape, the substantial area of the portion of the antenna 116 facing the container 15 is limited to only both edges. It is possible to limit. As a result, the inner surface of the container 15 in the vicinity of the antenna 116 is hardly sputtered, and contamination of the surface of the substrate 14 can be suppressed.
[0030]
FIG. 5 is also similar to FIG. 2 and shows a third embodiment in which a part of the first embodiment is modified. Also in this embodiment, the antenna 216 has its cross-sectional shape changed, and as shown in the figure, each edge of the antenna 216 faces the outer surface of the cylindrical side wall 15b of the container 15 and the outer surface of the disc-shaped flange portion 15d. Thus, it has a curved arc-shaped longitudinal section. Other configurations are the same as those of the first embodiment, and substantially the same elements are denoted by the same reference numerals. Regions of the high-density plasmas 25 and 26 are formed in the internal space corresponding to the respective edges of the antenna 216. The antenna 216 according to the present embodiment also has the same operations and effects as the antenna of the second embodiment.
[0031]
FIG. 6 shows a fourth embodiment of the plasma processing apparatus according to the present invention, and is a longitudinal sectional view in the vicinity of an antenna. The overall configuration of the plasma processing apparatus is the same as that of the first embodiment, and a description thereof will be omitted. In the plasma processing apparatus of this embodiment, a portion corresponding to the container 15 described above has a planar structure. That is, as shown in FIG. 6, the wall 41 made of a dielectric material such as quartz forms a part of the central portion of the upper wall 13a of the processing vessel 13. The internal space of the container 15 described above does not substantially exist and is a part of the internal space of the processing container 13. The wall 41 has a disc shape and functions as a window for introducing high-frequency power.
[0032]
An antenna 316 is disposed outside the wall portion 41. The antenna 316 has an annular shape and a U-shaped or U-shaped cross section. The antenna 316 is arranged so that the open part in the cross section faces the outer surface of the wall part 41, and both edges of the antenna 316 face the outer surface of the wall part 41. The antenna 316 is formed such that the diameter of the outer edge thereof is necessarily smaller than the diameter of the dielectric wall 41. As a result, in the internal space of the processing vessel 13, two annular high-density plasmas 25 and 26 having coaxial positional relationships are formed at locations corresponding to both edges of the antenna 316. Also in the structure according to the present embodiment, an ion current density distribution similar to the characteristic 33 shown in FIG. 3 can be obtained. The diameter of the wall portion 41 formed of a dielectric is preferably 2/3 to 5/4 times the diameter of the substrate 14. Further, the diameter of the inner edge of the antenna 316 is ¼ to ½ times the diameter of the substrate 14, and the diameter of the outer edge of the antenna 316 is 3/5 to 1 times the diameter of the substrate 14. Preferably there is.
[0033]
When the size of the substrate 14 is larger than φ300 mm, the structure of the fourth embodiment is more suitable than the first to third embodiments. In addition, it is preferable that the wall part 41 which concerns on 4th Embodiment is not a complete plane, but makes it a slightly convex shape outward, and increases intensity | strength.
[0034]
FIG. 7 shows the fifth embodiment, which is a modification of the above-described fourth embodiment. Since the overall configuration of the plasma processing apparatus is the same as that of the first and fourth embodiments, description thereof is omitted. The form and arrangement of the antenna 316 are the same as in the fourth embodiment. In the characteristic configuration of this embodiment, a magnetic circuit is disposed in the vicinity of the outer edge of the antenna 316. This magnetic circuit is constituted by, for example, three ring-shaped (annular) permanent magnets 42. The three permanent magnets 42 are arranged on the wall 41 and the upper wall 13a of the processing container 13 in a concentric positional relationship. In this case, the permanent magnet 22 disposed around the processing container 13 is not necessarily required. In the case of this embodiment, the permanent magnet is omitted. The magnetic pole arrangement of the three permanent magnets 42 is preferably arranged such that the magnetic poles facing the upper wall portion 13a and the wall portion 41 of the processing vessel 13 are alternately different. Further, the outer end portion of the antenna 316 is disposed between the three permanent magnets 42, for example, between the inner permanent magnet 42 and the intermediate permanent magnet 42 as illustrated. Further, it may be disposed between the intermediate permanent magnet 42 and the outer permanent magnet 42. As a result, as shown in FIG. 7, a plasma-rich region 43 is created in a region located below the location where the permanent magnet 42 is disposed, and an ion current density distribution similar to the characteristic 33 shown in FIG. 3 is obtained. be able to.
[0035]
FIG. 8 shows the distribution of the magnetic lines of force 44 in the internal space of the processing vessel 13 obtained by the three permanent magnets 42 shown in FIG. By arranging the magnetic poles of the three permanent magnets 42 so as to be alternately different, a trough 45 called a separatrix is formed in the magnetic field lines 44. In the region of the valley 45, charged particles are easily trapped. Therefore, in the region of the valley 45, the plasma density can be increased and the confinement effect can be increased. Further, in the present embodiment, plasma diffusion is suppressed due to the effect of the magnetic field by the permanent magnet 42, so that a plasma having a sufficient density can be generated also on the outer peripheral portion of the substrate 14, and particularly for a substrate larger than φ300 mm. Suitable for processing.
[0036]
In each of the above-described embodiments, an example in which there are two antenna edges has been described, but it is also possible to provide three or more edges by branching the edges. In this case, a magnetic circuit can be disposed in the vicinity of each edge.
[0037]
【The invention's effect】
As is apparent from the above description, according to the present invention, in a plasma processing apparatus that includes a container in which a large substrate to be generated and processed is disposed, and that processes the substrate using ICP or helicon, Compared to the conventional device, the shape and arrangement structure of the annular antenna that supplies high-frequency power to the internal space is such that a high-density plasma region can be formed in the central region of the container and the peripheral region corresponding to the outer periphery of the substrate. Thus, plasma having a good ion current density distribution can be generated from the center of the substrate toward the outer peripheral portion, and processing with good uniformity within the substrate surface can be performed. Further, it can sufficiently cope with a substrate having a diameter larger than φ300 mm.
[Brief description of the drawings]
FIG. 1 is a longitudinal sectional view showing a configuration of a first embodiment of the present invention.
FIG. 2 is an enlarged vertical sectional view of a main part in FIG.
FIG. 3 is a graph showing ion current density characteristics of the apparatus of the first embodiment and ion current density characteristics of a conventional apparatus.
FIG. 4 is a longitudinal sectional view of a main part showing the configuration of a second embodiment of the present invention.
FIG. 5 is a longitudinal sectional view of an essential part showing the configuration of a third embodiment of the present invention.
FIG. 6 is a longitudinal sectional view of a main part showing the configuration of a fourth embodiment of the present invention.
FIG. 7 is a longitudinal sectional view of a main part showing the configuration of a fifth embodiment of the present invention.
FIG. 8 is a graph showing the distribution of magnetic flux lines in the fifth embodiment.
FIG. 9 is a longitudinal sectional view showing a configuration of a conventional plasma processing apparatus.
[Explanation of symbols]
11 Container (depressurized container)
12 Substrate support mechanism 13 Processing container 14 Substrate 15 Container (power introduction container)
16 Antenna 116, 216 Antenna 316 Antenna 42 Permanent magnet

Claims (6)

A power introduction container having a configuration for processing an object to be processed disposed in a decompressed container with plasma, wherein the container has an annular antenna disposed around the outside and plasma is generated in the internal space; And connected to the internal space of the power introduction container, and a processing container in which the object to be processed is arranged, and generating the plasma in the power introduction container with high frequency power given from the annular antenna, In the plasma processing apparatus for processing the object to be processed by the plasma diffused into the processing container,
The annular antenna is disposed around the outside of the power introduction container side portion in the vicinity of the boundary where the power introduction container and the processing container are connected, and the internal space on the power introduction container side and the internal space on the processing container side The plasma processing apparatus is characterized in that a high density region of the plasma is generated in each internal space on the power introduction container side and the processing container side by the annular antenna.   2. The plasma processing apparatus according to claim 1, wherein an enlarged diameter portion is formed in the power introduction container side portion in the vicinity of the boundary portion, and the annular antenna is disposed around the enlarged diameter portion.   3. The plasma processing apparatus according to claim 1, wherein each of the two edge portions of the annular antenna faces at an angle substantially perpendicular to an outer surface of the power introduction container.   The plasma processing apparatus according to claim 1, wherein a position of the edge portion outside the annular antenna corresponds to a position of an outer peripheral portion of the substrate. It has a configuration for processing an object to be processed disposed in a decompressed container with plasma, and the container includes a power introduction wall portion, outside the power introduction wall portion, in the internal space of the container. An annular antenna for generating the plasma is disposed;
A radial cross-sectional shape of the annular antenna is U-shaped or U-shaped, and an open side of the cross-sectional shape of the annular antenna is disposed toward the power introduction wall portion,
At least two annular edges in the radial cross-sectional shape of the annular antenna are directed to different positions in the internal space of the container via the power introduction wall,
The plasma processing apparatus, wherein the annular antenna generates a high-density region of the plasma in at least two places in the internal space of the container. 6. The plasma according to claim 5 , wherein an annular magnetic circuit is provided near the annular edge outside the annular antenna, and a region for restraining charged particles is formed in the internal space of the container by the magnetic circuit. Processing equipment.

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