JPH10172790A - Plasma processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a plasma processing device enhancing uniformity of ion current density distribution and suitable to a large-scaled processing substrate of diameter of 300mm or more. SOLUTION: A substrate 14 disposed in a de-pressurizing container 11 is processed by plasma, and the de-pressurizing container 11 comprises a power introducing container 15 having a circular antenna 16 disposed in an outside periphery and plasma generated, and a processing container 13 communicating with a power introducing container 15 and having a substrate disposed. In the power introducing container 15, plasma is generated by high-frequency power supplied to a circular antenna 16. The circular antenna 16 is disposed in the outside periphery of a power introducing container side part in the vicinity of a boundary part of the power introducing container 15 and the processing container 13 and has a rim part facing the inside of the power introducing container and a space inside the processing container side, and a high-density area of a plasma in each inside space on the power introducing container 15 side and the pressing container 13 side is generated by the circular antenna 16.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a plasma processing apparatus, and more particularly to a plasma processing apparatus suitable for a dry etching apparatus, a plasma CVD apparatus, a sputtering apparatus, and a surface reforming apparatus.

[0002]

2. Description of the Related Art Conventionally, as a plasma source of a plasma processing apparatus for processing a substrate, an inductively coupled plasma (Inductively coupled plasma) capable of generating a high-density plasma at a constant pressure has been conventionally used.
ma: hereinafter, referred to as “ICP”), and helicon wave plasma (hereinafter, referred to as “helicon”) that generates plasma by exciting and propagating helicon waves. The ICP normally generates plasma using an antenna to which high-frequency power is applied. The helicon is usually provided with an antenna similar to the ICP, and is further configured to be able to propagate a helicon wave into the plasma in combination with a magnetic circuit.

An example of the configuration of a conventional plasma processing apparatus will be described with reference to FIG. This plasma processing apparatus is ICP
And a helicon device. This device is
A substrate processing chamber 101 capable of holding the inside in a reduced pressure state, and a substrate support mechanism 1 for supporting a substrate 103 in the substrate processing chamber 101
02, a gas introduction mechanism 104 for introducing a gas into the substrate processing chamber 101, an annular antenna 105 for generating plasma inside the substrate processing chamber 101, and an antenna 105
And a matching circuit 107 for matching when supplying high-frequency power from the high-frequency power supply 106 to the antenna 105. The substrate processing chamber 101 is formed of a non-metal portion 101a such as quartz and a metal portion 101b made of aluminum or stainless steel. Solenoid coils 108 and 109 for exciting helicon waves are arranged around the antenna 105. Further, a permanent magnet 110 is arranged around the substrate processing chamber 101 as necessary. This permanent magnet 110
Is provided to suppress plasma loss on the wall surface of the substrate processing chamber 101. With the above configuration, the DC power supplies 111 and 112 cause the solenoid coils 108 and 1 to operate.
By supplying DC power to each of the components 09, a magnetic field is generated inside the substrate processing chamber 101, and plasma using helicon waves can be generated in addition to normal ICP plasma. In FIG. 9, an exhaust mechanism, a substrate transport mechanism for transporting the substrate 103, a substrate temperature adjusting mechanism, and a substrate processing chamber 1 for maintaining the inside of the substrate processing chamber 101 in a reduced pressure state.
The illustration of the wall surface temperature adjustment mechanism 01, the gas supply mechanism that supplies gas to the gas introduction mechanism 104, and the like are omitted for convenience of explanation.

Next, a procedure for processing a substrate using the above-described plasma processing apparatus will be described. The substrate 103 is transported into the substrate processing chamber 101 by a substrate transport mechanism (not shown), and the substrate 103 is fixed on the substrate support mechanism 102. The inside of the substrate processing chamber 101 is depressurized to a predetermined pressure by an exhaust mechanism (not shown), and gas supplied from a gas supply mechanism (not shown) is supplied to the substrate processing chamber 1 through a gas introduction mechanism 104.
01 and maintained at a predetermined pressure. A high frequency is applied to the antenna 105 from the high frequency power supply 106 via the matching circuit 107 to generate a plasma inside the substrate processing chamber 101, and the substrate 103 is processed with the plasma. further,
To excite the helicon wave, the DC power supplies 111 and 112 control the solenoid coil 1 while the high frequency is applied.
A direct current is passed through 08 and 109 to form a magnetic field inside the substrate processing chamber 101. At this time, normally, currents in opposite directions flow through the solenoid coils 108 and 109.

[0005]

The above-mentioned conventional plasma processing apparatus has the following problems. Regarding the configuration of the device related to the helicon, the solenoid coils 108, 10
The current distribution of ions incident on the substrate 103 can be controlled by changing the current value of No. 9. On the other hand, the antenna 105 is usually designed to be smaller than the size of the substrate 103, and in the conventional device, the size of the antenna and the ability of the matching circuit 107 related thereto can be made relatively small. . However, since the conventional apparatus is an apparatus corresponding to the processing of a φ200 mm (6 inch) substrate, obtaining a favorable condition of the ion current density distribution with respect to a φ300 mm (8 inch) substrate requires the use of a solenoid coil. It turned out that it was difficult only by changing the current value.

The reason is that high-density plasma is generated in the vicinity of the antenna 105 inside the nonmetallic portion 101a, but no plasma is generated in the vicinity of the outer periphery of the substrate 103, and the high-density plasma is generated from the vicinity of the antenna. The point is that the ion current density cannot be sufficiently increased only by plasma diffusion. From this, when a conventional plasma processing apparatus is used, when processing a substrate larger than φ200 mm, the uniformity of the in-plane processing of the substrate becomes poor.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems, and to provide a substrate larger than φ200 mm,
It is an object of the present invention to provide a plasma processing apparatus capable of improving the uniformity of the ion current density distribution required for processing a substrate having a size of 00 mm or more.

[0008]

A plasma processing apparatus according to the present invention is configured as follows to achieve the above object.

A plasma processing apparatus according to a first aspect of the present invention (corresponding to claim 1) is for processing an object to be processed (substrate) disposed in a container (reduced pressure container) whose inside is in a reduced pressure state with plasma. This container has an annular antenna disposed around the outside, and is connected to a power introduction container made of a dielectric material in which plasma is generated in the internal space, in communication with the internal space of the power introduction container. And a processing container in which the object to be processed is disposed. The high frequency power supplied to the annular antenna generates plasma in the power introduction container, and the object to be processed is processed by the plasma diffused into the processing container. Further, the annular antenna is disposed around the outer periphery of the power supply container side portion near the boundary where the power supply container and the processing container are connected, and the inner space on the power supply container side and the inner space on the processing container side are arranged. Has an edge directed to each of
With this annular antenna, a high-density region of plasma is generated in each internal space on the power supply container side and the processing container side.

According to the first aspect of the present invention, the shape of the annular antenna relating to the ICP and the helicon and the arrangement of the annular antenna with respect to the power supply container are configured as described above, so that the inner edge and the outer edge of the annular antenna are formed. A high-density plasma region can be created in the internal space corresponding to the part. As a result, by utilizing the diffusion of the plasma created in the power supply container to the processing container and the high-density plasma created in the internal space on the processing container side,
Plasma having a sufficient density can be generated at the outer peripheral portion of the processing object in the inner space of the processing container in which the processing object is arranged. In particular, in a film formation process or the like of a substrate having a diameter of 300 mm or more by plasma, a sufficient density of plasma can be given to the space near the outer periphery in addition to the center of the substrate, and the ion current density in the radial direction of the substrate can be increased. The uniformity of distribution is improved.

According to a second aspect of the present invention (corresponding to claim 2), in the plasma processing apparatus according to the first aspect, an enlarged diameter portion is formed in a portion near the power introduction container near the boundary portion, and the annular antenna has a diameter. It is characterized by being arranged around the enlarged portion.
By arranging in an appropriate positional relationship with respect to the outer surface of the enlarged diameter portion, the inner edge and the outer edge of the annular antenna for supplying high-frequency power are formed on the outer surface of the cylindrical wall of the power introduction container, and the processing container. It can be arranged corresponding to the outer surface of the disk-shaped flange portion of the power introduction container corresponding to the internal space on the side.

A third aspect of the present invention (corresponding to claim 3) is the plasma processing apparatus according to the first or second aspect, wherein each of both edges of the annular antenna is perpendicular to the outer surface of the power introduction container. It is characterized by heading at an angle. By arranging the edge of the annular antenna in such a manner, it is possible to prevent spatter on the inner surface of the power supply container.

According to a fourth aspect of the present invention (corresponding to claim 4), in each of the above aspects, the position of the outer edge of the annular antenna corresponds to the position of the outer peripheral portion of the substrate. And This makes it possible to create a high-density plasma region especially near the outer periphery of the substrate.

A plasma processing apparatus according to a fifth aspect of the present invention (corresponding to claim 5) has a configuration for processing an object to be processed placed in a container whose inside is in a reduced pressure state with plasma. An annular antenna for generating plasma in an inner space of the container is disposed outside the power introducing wall, the annular antenna having at least two edges facing the inner space of the container; The annular antenna is configured to generate a high-density region of plasma at at least two places inside and outside the inner space of the container. In this configuration, the container does not particularly have a power introduction container, and a high-density plasma region can be created in the processing container by introducing high-frequency power directly into the processing container at the power introduction wall.

According to a sixth aspect of the present invention (corresponding to claim 6), in the plasma processing apparatus according to the fifth aspect, an annular magnetic circuit is provided near an outer edge of the annular antenna, and the container is controlled by the magnetic circuit. It is characterized in that a region for restraining charged particles is formed in the internal space. As a result, charged particles can be trapped in a specific region to increase the plasma density in that region. Further, the effect of confining charged particles can be enhanced, and the diffusion of plasma can be suppressed.

[0016]

Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.

A first embodiment will be described with reference to FIGS. FIG. 1 is a diagram showing the internal structure of a decompression vessel of a plasma processing apparatus for substrate processing and the configuration of a portion related thereto.
Is an enlarged view of a main part in FIG. 1, and FIG. 3 is a graph showing characteristics.

In FIG. 1, the plasma processing apparatus is an ICP
And the device configuration related to the helicon. The container 11 is maintained in a predetermined reduced pressure state by an exhaust mechanism (not shown) in the internal space. Hereinafter, the container 11 is referred to as a “reduced pressure container”. In the decompression container 11 according to the present embodiment, the internal space is composed of two spaces. One is the substrate support mechanism 1
2 is a space in which a processing container 13 made of a metal such as aluminum or stainless steel is formed.
The side wall of the processing container 13 is formed, for example, in a cylindrical shape. A substrate 14 to be processed is disposed on the substrate support mechanism 12. The substrate 14 is, for example, a large-sized substrate having a diameter of 300 mm. The other is a space in which plasma is generated, and is formed by a container 15 mainly made of a dielectric material such as quartz, into which a high frequency can be introduced. The container 15 has an upper end wall 15
a is made of metal, and the other part is made of dielectric. The side wall 15b of the container 15 located on the upper side is formed, for example, in a substantially cylindrical shape. The container 15 is attached to and fixed to the upper wall 13a of the processing container 13. The diameter of the side wall 15b of the container 15 is set to be smaller than the diameter of the side wall 13b of the processing container 13. The internal space of the processing container 13 communicates with the internal space of the container 15. Therefore, the plasma generated in the inner space of the container 15 diffuses and moves downward,
The process proceeds to the internal space of the processing container 13. The substrate 14 arranged in the internal space of the processing container 13 is located at a position facing the internal space of the container 15. The axis of the cylindrical side wall of the container 15 and the substrate 1
The center of 4 is located coaxially. In FIG. 2, A is a central axis. The plasma diffused from the container 15 to the processing container 13 moves to the space in front of the substrate 14.

In the configuration of the present embodiment, the container 1 is located at the boundary between the processing container 13 and the container 15 which are connected to each other.
5, a portion 15 whose diameter gradually increases from the cylindrical side wall 15 b of the container 15 toward the processing container 13.
c (hereinafter referred to as “diameter enlarged portion 15c”) is formed. The lower peripheral portion of the container 15 is flush with the upper wall of the processing container 13. The container 15 includes the cylindrical side wall 15b described above,
A disk-shaped flange portion 15d on a concentric circle having a diameter larger than that of the cylindrical side wall, and a diameter-enlarging portion 15 located between them.
c.

An antenna 16 is arranged around the enlarged diameter portion 15c of the container 15. The antenna 16 has a partially open annular shape, has a desired length in the axial direction, and gradually increases in diameter toward the processing container 13 as shown in FIGS. 1 and 2. It is formed as follows. Although a support mechanism of the antenna 16 is not shown, a well-known mechanism is used. As shown in FIG. 2, the feature of the antenna 16 corresponds to the cylindrical side wall 15 b of the container 15 so that the inner edge of the antenna 16 located on the upper side in FIG. Is disposed so as to correspond to the disk-shaped flange portion 15d of the container 15 so that the outer edge located at the position.

With respect to the above configuration, a high frequency power supply 17 for supplying high frequency power to the antenna 16 and a high frequency power supply 1
A matching circuit 18 for matching when supplying high-frequency power from the antenna 7 to the antenna 16, a gas introduction mechanism 19 for introducing gas into the internal space of the processing container 13, and a solenoid coil 20 disposed around the antenna 16. , 21 and a permanent magnet 22 disposed around the processing container 13.
The solenoid coils 20 and 21 are for exciting helicon waves, and are supplied with DC power by DC power supplies 23 and 24. The permanent magnet 22 is provided to suppress plasma loss on the wall surface of the processing container 13. FIG. 1
In the drawings, an exhaust mechanism for holding the inside in a reduced pressure state, a substrate transport mechanism, a substrate temperature adjusting mechanism, a wall temperature adjusting mechanism for a processing container, and a gas supply mechanism for supplying gas to a gas introducing mechanism are illustrated as the gist of the invention. And for convenience of explanation.

In the above plasma processing apparatus, the processing vessel 1
The substrate 14 is transported into the substrate 3 by the substrate transport mechanism, the substrate 14 is disposed on the substrate support mechanism 12, and the substrate 14 is fixed.
FIG. 1 shows a state where the substrate 14 is fixed. Next, the insides of the processing vessel 13 and the vessel 15 are reduced to a required pressure by an exhaust mechanism, a gas supplied from a gas supply system is introduced into the processing vessel 13 via a gas introduction mechanism 19, and the inside is brought to a required pressure. Hold. A high frequency is applied to the antenna 16 from the high-frequency power supply 17 via the matching circuit 18, and plasma is generated inside the container 15 and in a region near the container 15 in the processing container 13. The plasma generated inside the container 15 diffuses into the internal space of the processing container 13. The substrate 14 is processed by the plasma thus diffused.

In the plasma processing apparatus according to the above-described embodiment, as described above, the portion on the container 15 side near the boundary between the container 15 and the processing container 13, that is, the enlarged diameter portion 15c
The antenna 16 is arranged around the. As shown in FIG. 2, the diameter-enlarging portion 15c is inclined in its cross-sectional shape. As a result, the antenna 16 arranged in parallel to the inclined wall portion has a cylindrical shape with two edges in its cross-sectional shape. It is adjacent to the outer surface of the shaped side wall 15b and the outer surface of the disk-shaped flange portion 15d. That is, the inner edge of the annular antenna 16 is adjacent to the outer surface of the cylindrical side wall 15 b of the container 15, and the outer edge is adjacent to the disk-shaped flange portion 15 d of the container 15.

This will be described in more detail. The inner radius of the cylindrical side wall 15b of the container 15 is preferably one of the radius of the substrate 14.
The distance between the inner surface of the cylindrical side wall and the innermost point of the antenna 16 is 3/5.
It is preferable to set it within 0 mm. Further, the outermost portion of the antenna 16 is located on the substrate 14 from the central axis A of the cylindrical side wall.
The distance is preferably about 3/5 to 1 times the radius of. From such a positional relationship, the antenna 1 shown in FIG.
Preferably, the angle of inclination in the cross section of No. 6 is maintained at about 30 to 60 °.

An antenna 16 disposed in the above-described positional relationship with respect to the container 15 of the decompression container 11 and the processing container 13.
When the high-frequency power is supplied to the inner space, the inner space corresponding to the inner edge and the outer edge of the antenna 16, that is, the inner space of the container 15 corresponding to the inner edge and the inner space of the processing container 13 corresponding to the outer edge Generates high-density plasmas 25 and 26 on concentric axes having different diameters. Therefore, even when a large substrate 14 is processed, it is possible to prevent the ion current density from decreasing at the outer peripheral portion of the substrate as in the related art. As a result, plasma 27 having good uniformity within the substrate surface is generated in the space in front of the substrate 14.

FIG. 3 shows the radial distribution of the ion current density measured at a height of about 30 mm from the substrate 14. Characteristic 3
Reference numerals 1 and 32 denote radial distributions of ion current density in the case of a device relating to a helicon obtained when the current values of the solenoid coils 20 and 21 are changed. A characteristic 33 is a radial distribution of the ion current density obtained in the case of the first embodiment.

As is clear from the comparison of these characteristics,
The reduction in the ion current density at the outer peripheral portion of the substrate, which is a problem in the conventional plasma processing apparatus, is suppressed in the apparatus of the present embodiment. Furthermore, according to the device according to the present embodiment, it is possible to apply DC power from the DC power supplies 23 and 24 to the solenoid coils 20 and 21 to control and optimize the radial distribution of the ion current density. By optimizing the positional relationship between each edge of the antenna 16 and the container 11, the radial distribution of the ion current density can be controlled and optimized. Therefore, a DC power supply and a solenoid coil are not always necessary, and can be reduced in size and cost.

FIG. 4 is a view similar to FIG. 2, showing a second embodiment in which a part of the first embodiment is modified. In this embodiment, the cross-sectional shape of the antenna 116 is changed so that each edge of the antenna 116 is
The container 15 has an L-shaped longitudinal section so as to be perpendicular to the outer surface of the cylindrical side wall 15b and the outer surface of the disk-shaped flange portion 15d. Other configurations are the same as those of the first embodiment, and substantially the same components are denoted by the same reference numerals. Regions of the high-density plasmas 25 and 26 are formed in the internal space corresponding to the respective edges of the antenna 116.

Even with an antenna having such a shape,
An ion current density similar to the characteristic 33 shown in FIG. 3 can be obtained. In the case of the present embodiment, by adopting such a shape, a portion other than the both edges of the antenna 116 is formed in the container 15.
Antenna 116 facing container 15 to move away from
Can be limited to only both edges. As a result, the container 15 near the antenna 116
Is hardly sputtered, and contamination of the surface of the substrate 14 can be suppressed.

FIG. 5 is similar to FIG. 2 and shows a third embodiment in which a part of the first embodiment is modified. Also in this embodiment, the cross-sectional shape of the antenna 216 is changed, and as shown in FIG.
The container 15 has an arc-shaped vertical cross section curved toward the outer surface of the cylindrical side wall 15b and the outer surface of the disk-shaped flange portion 15d. Other configurations are the same as those of the first embodiment, and substantially the same components are denoted by the same reference numerals. Regions of the high-density plasmas 25 and 26 are formed in the internal space corresponding to the respective edges of the antenna 216. With the antenna 216 according to the present embodiment, the same operation and effect as those of the antenna according to the second embodiment occur.

FIG. 6 shows a fourth embodiment of the plasma processing apparatus according to the present invention, and is a longitudinal sectional view near an antenna. The overall configuration of the plasma processing apparatus is the same as that of the first embodiment, and the description is omitted. In the plasma processing apparatus of the present embodiment, a portion corresponding to the above-described container 15 has a planar structure. That is, as shown in FIG. 6, the wall portion 41 made of a dielectric material such as quartz forms a part of the central portion of the upper wall 13a of the processing container 13. The internal space of the container 15 described above does not substantially exist, and is a part of the internal space of the processing container 13. The wall portion 41 has a disk shape and functions as a window for introducing high-frequency power.

An antenna 316 is arranged outside the wall 41. The antenna 316 is annular and has a U-shaped or U-shaped cross section. Antenna 316
Is arranged such that the open portion in the cross section faces the outer surface of the wall portion 41, and both edges of the antenna 316 face the outer surface of the wall portion 41. The antenna 316 is formed such that the diameter of the outer edge portion is always smaller than the diameter of the dielectric wall portion 41. As a result, in the internal space of the processing container 13, two high-density plasmas 25, which are coaxial with each other, are provided at locations corresponding to both edges of the antenna 316.
26 regions are formed. Also in the structure according to the present embodiment, an ion current density distribution similar to the characteristic 33 shown in FIG. 3 can be obtained. It is preferable that the diameter of the wall portion 41 formed of a dielectric be 2/3 times to 5/4 times the diameter of the substrate 14. Further, the diameter of the inner edge of the antenna 316 is 1/4 to 1/2 times the diameter of the substrate 14, and the diameter of the outer edge of the antenna 316 is 3/5 to 1 times the diameter of the substrate 14. Preferably, there is.

When the size of the substrate 14 is larger than φ300 mm, the structure of the fourth embodiment is more suitable than the first to third embodiments. In addition, it is preferable that the wall part 41 according to the fourth embodiment is not a perfect plane, but is slightly convex outward to increase the strength.

FIG. 7 shows a fifth embodiment.
It is a modification of the embodiment. Since the overall configuration of the plasma processing apparatus is the same as in the first and fourth embodiments, the description will be omitted. The form and arrangement of the antenna 316 are the same as in the fourth embodiment. The characteristic configuration of the present embodiment is that a magnetic circuit is arranged near the outer edge of the antenna 316. This magnetic circuit is constituted by, for example, three ring-shaped (annular) permanent magnets 42. The three permanent magnets 42 are arranged on the wall 41 and the upper wall 13a of the processing container 13 in a concentric positional relationship. In this case, the processing container 13
Is not always necessary. In the case of the present embodiment, the permanent magnet is omitted. Regarding the magnetic pole arrangement of the three permanent magnets 42, it is preferable that the magnetic poles facing the upper wall portion 13a and the wall portion 41 of the processing container 13 are arranged so as to be alternately different. Further, the outer end of the antenna 316 is located between the three permanent magnets 42, for example, between the inner permanent magnet 42 and the intermediate permanent magnet 42 as shown. Further, it can be arranged between the middle permanent magnet 42 and the outer permanent magnet 42. As a result, as shown in FIG. 7, a plasma-rich region 43 is created in a region located below the portion where the permanent magnet 42 is arranged, and an ion current density distribution similar to the characteristic 33 shown in FIG. 3 is obtained. be able to.

FIG. 8 shows the three permanent magnets 42 shown in FIG.
3 shows the distribution of the magnetic force lines 44 in the internal space of the processing container 13 obtained by the above method. Three permanent magnets 42
Are alternately arranged to form a valley 45 called a separatrix in the magnetic field lines 44. In the region of the valley 45, charged particles are easily trapped. Therefore, in the region of the valley 45, the plasma density can be increased, and the confinement effect can be enhanced. Further, in the present embodiment, the diffusion of the plasma is suppressed by the effect of the magnetic field by the permanent magnet 42, so that a plasma having a sufficient density can be generated also on the outer peripheral portion of the substrate 14,
Particularly, it is suitable for processing a substrate larger than φ300 mm.

In each of the embodiments described above, an example in which the antenna has two edges has been described. However, it is also possible to provide three or more edges by branching the edge. In this case, a magnetic circuit can be arranged near each edge.

[0037]

As is apparent from the above description, according to the present invention, there is provided a container in which a large-sized substrate for generating a plasma and to be processed is disposed, and the substrate is processed using an ICP or a helicon. In the plasma processing apparatus, the shape and arrangement of the annular antenna that supplies high-frequency power to the internal space are such that a high-density plasma region can be formed in the central region of the container and the peripheral region corresponding to the outer peripheral portion of the substrate. As compared with the conventional apparatus, it is possible to generate a plasma having an excellent ion current density distribution from the center of the substrate toward the outer periphery, and to perform a process with good uniformity on the substrate surface. Further, it can sufficiently cope with a substrate having a diameter larger than φ300 mm.

[Brief description of the drawings]

FIG. 1 is a longitudinal sectional view showing a configuration of a first embodiment of the present invention.

FIG. 2 is an enlarged vertical sectional view of a main part in FIG.

FIG. 3 is a graph showing ion current density characteristics of the device of the first embodiment and ion current density characteristics of a conventional device.

FIG. 4 is a vertical sectional view of a main part showing a configuration of a second embodiment of the present invention.

FIG. 5 is a vertical sectional view of a main part showing a configuration of a third embodiment of the present invention.

FIG. 6 is a vertical sectional view of a main part showing a configuration of a fourth embodiment of the present invention.

FIG. 7 is a vertical sectional view of a main part showing a configuration of a fifth embodiment of the present invention.

FIG. 8 is a graph showing a distribution of magnetic flux lines in the fifth embodiment.

FIG. 9 is a longitudinal sectional view showing a configuration of a conventional plasma processing apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Container (decompression container) 12 Substrate support mechanism 13 Processing container 14 Substrate 15 Container (power introduction container) 16 Antenna 116, 216 Antenna 316 Antenna 42 Permanent magnet

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 21/205 H01L 21/205 21/3065 21/302 B

Claims (6)

[Claims] 1. An apparatus for processing an object to be processed disposed in a container under reduced pressure with plasma, wherein the container has an annular antenna disposed around the outside, and plasma is generated in an internal space. A power supply container, and a processing container connected to the internal space of the power supply container so as to communicate with the internal space of the power supply container. In a plasma processing apparatus that generates plasma and processes the object by using the plasma diffused into the processing container, the annular antenna includes the power near a boundary between the power introduction container and the processing container. The ring is arranged around the outside of the introduction container side portion, and has edges facing each of the internal space on the power introduction container side and the internal space on the processing container side, The plasma processing apparatus characterized by high-density regions of the plasma in the interior space of the processing vessel side to the power lead container side is generated by the antenna. 2. The plasma according to claim 1, wherein an enlarged-diameter portion is formed in the power introduction container-side portion near the boundary portion, and the annular antenna is disposed around the enlarged-diameter portion. Processing equipment. 3. The plasma processing apparatus according to claim 1, wherein each of the both edge portions of the annular antenna is directed at a substantially right angle with respect to an outer surface of the power introduction container. 4. The plasma processing apparatus according to claim 1, wherein a position of the edge portion outside the annular antenna corresponds to a position of an outer peripheral portion of the substrate. 5. An apparatus for processing an object to be processed disposed in a container in a reduced pressure state with plasma, wherein the container includes a power introduction wall, and the power supply wall is provided outside the power introduction wall. An annular antenna for generating the plasma is arranged in an inner space of the container, the annular antenna has at least two edges facing the inner space of the container, and the inner side of the inner space of the container is formed by the annular antenna. A plasma processing apparatus, wherein a high-density region of the plasma is generated in at least two outer positions. 6. An annular magnetic circuit is provided near the edge outside the annular antenna, and a region for restraining charged particles is formed in the inner space of the container by the magnetic circuit. 6. The plasma processing apparatus according to 5.