US1769852A - Method of producing rectifying units - Google Patents

Method of producing rectifying units Download PDF

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Publication number
US1769852A
US1769852A US201662A US20166227A US1769852A US 1769852 A US1769852 A US 1769852A US 201662 A US201662 A US 201662A US 20166227 A US20166227 A US 20166227A US 1769852 A US1769852 A US 1769852A
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Prior art keywords
units
temperature
producing
oxide
plate
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Expired - Lifetime
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US201662A
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Clarence E Ogden
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KODEL RADIO Corp
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KODEL RADIO CORP
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Priority to US201662A priority Critical patent/US1769852A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/80—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
    • H01L21/165—Reduction of the copper oxide, treatment of the oxide layer

Description

July l, 1930.a vc. E oGDl-:N 1,769,852
METHOD OF PRODUGING' RECTIFYING UNITS Filed June 27, 1927 C/L ORI/VE i `Patented July l, 1930 I ing units is particularly adaptable to the new UNITED STATESv PATENT OFFICE CLARENCE E. OGDEN, OF CINCINNATI, OHIO, ASSIGNOR TO THE KODEL RADIO COB- POBATION, A CORPORATION OF OHIO METHOD 0F YRODUCING RECTIIE'YING UNITS .Application filed June 27,
The present invention relates to the method of producing rectifying units particularly of the copper oxide type.
In rectlfying units of'the copper oxide type, the eliectiveness of the units is provagent during the heat treatment of the metallic plate for the formation of the oxide, thejormation ofsuch oxide is facilitated and the la er orm materially increased. I have also diiscovered that the length of time involved in cooling the ,units after the same` have been raised to the required temperature is important to the relation of the internal resistance of the units; that is, the more -rapidly the unit is cooled after being raised to the required temperature the lower the internal resistance of the unit.
The object of the present invention is, therefore, to derive in the production of rectiying units the benefits from such discoveries.
In the drawings:-
Figure 1 is al view illustrating the method of carrying into eect the present invention.
Figure 2 is a sectional view of a rectifying unit constructed in accordance herewith.
The present method of producing rectifytype' of copper oxide units which have lately been developed in which the surface of the layer of copper oxide is again reduced to metallic copper after oxidation by quenching the unit in a bath, for instance', of alcohol and water. In the;l production of such units it is important that the unit -be quenched in the bath when itis ata temperature not higher than 1400 degrees Fahrenheit. As the heat tSreatment of the units requires that they be 'raised to approximately 1900 degrees Fahrenheit, there must be an intervai of partial cooling before' the units are quenched and in order to minimize the internal resistance of the units the period of cooling must .be reduced as much as practicable.
1927. Serial No. 201,662.
as a catalytic agent in the formation of the Y oxide layer or layers on the metallic plates and enhances the production of such oxide so that the layer formed is comparatively thicker and therefore in the completed unit more effective than where such agent is not employed. After the copper or other metallic plates have been'raised to the requisite temperature in the furnace, that is, to approximately 1900 degrees Fahrenheit, for the formation of the oxide, they are then removed in the presence of an electric fan or other mechanical cooling means 3, causing rapid radiation and dissipation of the heat of such units until the temperature is reduced to approximately 1400 degrees Fahrenheit, at which temperature they are quenched in a suitable bath Solution in the tank 4. As it i is not always possible to control the cooling process before immersion in the bath within the desired limits, I have found that it is ordinarily most practicable to cool the units somewhat lower than the immersion temperature of 1400 degrees Fahrenheit then reheat by placing them in a second furnace 5 before quenching them in the bath, said furnace being maintained at the desired temperature of 1400 degrees Fahrenheit.
Having thus fully described my invention, what I claim as new and desire to secure by Letters Patent is:
1. The method of producing a rectifying unit, comprising raising a copper plate to a temperature of approximately 1900 degrees F. in the presence of oxygen and chlorine, then rapidly partially cooling said plate, then quenching same in a bath adapted partially to reduce the oxide to metallic copper. 2. The method of producing a rectiying unit, comprising raising a copper plate to a temperature of approximately 1900 degrees F. in the presence of oxygen, then rapidly partially cooling said plate, then raising the plate to a quenching temperature, then quenching said plate in a bath adapted partislly to reduce the oxide to metallic co per.
3. The method of producing a. recti ing unit, comprising raising a. copper plate to a. temperature of approximately 1900 degrees 5 F. 1n` the resence of o gen and chlorine, then rupi y artially coo 'ng said plate, then raising the p ate to a quenchmg temperature, then' uenchin said plate in a. bath adapted partis, 1y to re uce the oxide to metallic cop- P04. In the method of producing a rectifying unit, the step of heating a copper plate to a temperature of approximately 1900 degrees F. m the presence of oxygen and chlo- 15 Ille.
* CLARENCE E. OGDEN.
US201662A 1927-06-27 1927-06-27 Method of producing rectifying units Expired - Lifetime US1769852A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2475981A (en) * 1946-08-01 1949-07-12 Heatbath Corp Process for blackening copper and copper alloys
US2484252A (en) * 1944-11-07 1949-10-11 Bell Telephone Labor Inc Asymmetrical conductor
US2739276A (en) * 1951-02-23 1956-03-20 Gen Electric Copper oxide rectifier and method of making the same
US2812273A (en) * 1955-06-09 1957-11-05 Theodore S Shilliday Method of making titanium-dioxide rectifiers

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2484252A (en) * 1944-11-07 1949-10-11 Bell Telephone Labor Inc Asymmetrical conductor
US2475981A (en) * 1946-08-01 1949-07-12 Heatbath Corp Process for blackening copper and copper alloys
US2739276A (en) * 1951-02-23 1956-03-20 Gen Electric Copper oxide rectifier and method of making the same
US2812273A (en) * 1955-06-09 1957-11-05 Theodore S Shilliday Method of making titanium-dioxide rectifiers

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