GB353845A - Improvements relating to the manufacture of solid rectifiers for alternating electric currents - Google Patents

Improvements relating to the manufacture of solid rectifiers for alternating electric currents

Info

Publication number
GB353845A
GB353845A GB2235/30A GB223530A GB353845A GB 353845 A GB353845 A GB 353845A GB 2235/30 A GB2235/30 A GB 2235/30A GB 223530 A GB223530 A GB 223530A GB 353845 A GB353845 A GB 353845A
Authority
GB
United Kingdom
Prior art keywords
copper
contact
minutes
disc
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2235/30A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric and Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric and Manufacturing Co filed Critical Westinghouse Electric and Manufacturing Co
Publication of GB353845A publication Critical patent/GB353845A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • H01L21/161—Preparation of the foundation plate, preliminary treatment oxidation of the foundation plate, reduction treatment
    • H01L21/164—Oxidation and subsequent heat treatment of the foundation plate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Heat Treatment Of Articles (AREA)
  • Chemical Treatment Of Metals (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)

Abstract

In order to produce a rectifier of the copper oxide type which shall be capable of withstanding comparatively high voltages, for example from 10 to 20 volts per disc, a disc of copper or an alloy of copper with zinc or other metal is heated to a temperature just below its melting-point in an oxidizing atmosphere for a predetermined period. For copper, the temperature required is from 1000-1025 DEG C. and the heating may be continued for about 8 minutes. The unit is then cooled to room temperature for about 4 hours at a uniform rate. The oxide may then be removed from a portion of the surface in order to make contact with the copper. Another portion may be reduced to metallic copper by contact with a reducing liquid or gas, such as ethyl alcohol, to provide a contact for the other terminal, or alternatively a contact disc of soft metal such as lead or tin may be pressed into contact with the oxide surface. A rectifier having a lower resistance in the conductive direction may be made by heating a disc of copper or copper alloy to about 1005 DEG C. for about 8 minutes, transferring to an environment at a temperature of 490 DEG C. for about 2 1/2 minutes, and then optionally cooling in air for from two to three minutes. The units are then quenched in water at room temperature.
GB2235/30A 1929-02-06 1930-01-22 Improvements relating to the manufacture of solid rectifiers for alternating electric currents Expired GB353845A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US338053A US1936792A (en) 1929-02-06 1929-02-06 Method of making copper oxide rectifiers for high voltage application

Publications (1)

Publication Number Publication Date
GB353845A true GB353845A (en) 1931-07-30

Family

ID=23323213

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2235/30A Expired GB353845A (en) 1929-02-06 1930-01-22 Improvements relating to the manufacture of solid rectifiers for alternating electric currents

Country Status (3)

Country Link
US (1) US1936792A (en)
DE (2) DE563639C (en)
GB (1) GB353845A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB491785A (en) * 1937-02-08 1938-09-08 Albert Leslie Williams Improvements relating to the manufacture of alternating electric current rectifiers
US2459630A (en) * 1945-10-29 1949-01-18 Westinghouse Electric Corp Rectifier
US2793968A (en) * 1954-05-28 1957-05-28 Gen Electric Method of making copper oxide rectifier cells
BE509424A (en) * 1951-02-23
TW200520292A (en) * 2003-08-08 2005-06-16 Rovcal Inc High capacity alkaline cell
AR047875A1 (en) 2004-06-04 2006-03-01 Rovcal Inc ALKAL CELLS THAT PRESENT HIGH CAPACITY

Also Published As

Publication number Publication date
DE579414C (en) 1933-06-26
DE563639C (en) 1932-11-09
US1936792A (en) 1933-11-28

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