US12476080B2 - Plasma processing apparatus, power supply system, control method, program, and storage medium - Google Patents

Plasma processing apparatus, power supply system, control method, program, and storage medium

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US12476080B2
US12476080B2 US18/607,327 US202418607327A US12476080B2 US 12476080 B2 US12476080 B2 US 12476080B2 US 202418607327 A US202418607327 A US 202418607327A US 12476080 B2 US12476080 B2 US 12476080B2
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frequency
radio
power supply
bias
phase
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US20240222078A1 (en
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Gen Tamamushi
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32266—Means for controlling power transmitted to the plasma
    • H01J37/32275—Microwave reflectors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency

Definitions

  • Exemplary embodiments of the disclosure relate to a plasma processing apparatus, a power supply system, a control method, a program, and a storage medium.
  • a plasma processing apparatus is used to perform plasma processing on substrates.
  • the plasma processing apparatus uses bias radio-frequency power to draw ions in plasma generated in a chamber to a substrate.
  • Patent Literature 1 below describes a plasma processing apparatus that modulates the power level and the frequency of bias radio-frequency power.
  • Patent Literature 1 Japanese Unexamined Patent Application Publication No. 2009-246091
  • One or more aspects of the disclosure are directed to a technique for reducing the power level of a reflected wave of source radio-frequency power.
  • a plasma processing apparatus includes a chamber, a substrate support, a bias power supply, a radio-frequency power supply, a first sensor, and a second sensor.
  • the substrate support is in the chamber.
  • the bias power supply is electrically coupled to the substrate support to generate electrical bias energy.
  • the electrical bias energy has a bias frequency and is cyclically generated in bias cycles each having a duration being an inverse of the bias frequency.
  • the radio-frequency power supply is electrically coupled to a radio-frequency electrode to generate source radio-frequency power to generate plasma from a gas in the chamber.
  • the first sensor measures a power level of a reflected wave of the source radio-frequency power from a load.
  • the second sensor measures a voltage and a current on a feed line coupling the radio-frequency power supply and the radio-frequency electrode.
  • the radio-frequency power supply identifies, from a plurality of phase periods in a bias cycle of the electrical bias energy, a phase period having a minimum value of the power level of the reflected wave.
  • the radio-frequency power supply determines a reference value being a phase difference between the voltage and the current on the feed line in the identified phase period.
  • the radio-frequency power supply performs frequency control to set a source frequency of the source radio-frequency power for each of the plurality of phase periods based on a result of comparison between the reference value and the phase difference between the voltage and the current on the feed line in a corresponding phase period of the plurality of phase periods.
  • the technique according to the above exemplary embodiment reduces the power level of the reflected wave of the source radio-frequency power.
  • FIG. 1 is a diagram of a plasma processing system with an example structure.
  • FIG. 2 is a diagram of a capacitively coupled plasma processing apparatus with an example structure.
  • FIG. 3 is a timing chart for the plasma processing apparatus according to one exemplary embodiment.
  • FIG. 4 is a flowchart of a control method according to one exemplary embodiment.
  • FIG. 5 is a timing chart for determining source frequencies in a first example.
  • FIG. 6 is a timing chart for determining source frequencies in a second example.
  • FIG. 1 is a diagram of a plasma processing system with an example structure.
  • the plasma processing system includes a plasma processing apparatus 1 and a main controller 2 .
  • the plasma processing system is an example of a substrate processing system.
  • the plasma processing apparatus 1 is an example of a substrate processing apparatus.
  • the plasma processing apparatus 1 includes a plasma processing chamber 10 , a substrate support 11 , and a plasma generator 12 .
  • the plasma processing chamber 10 has a plasma processing space.
  • the plasma processing chamber 10 has at least one gas inlet for receiving at least one process gas supplied into the plasma processing space and at least one gas outlet for discharging the gas from the plasma processing space.
  • the gas inlet is connected to a gas supply 20 (described later).
  • the gas outlet is connected to an exhaust system 40 (described later).
  • the substrate support 11 is located in the plasma processing space and has a substrate support surface for supporting a substrate.
  • the plasma generator 12 generates plasma from at least one process gas supplied into the plasma processing space.
  • the plasma generated in the plasma processing space may be, for example, capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron cyclotron resonance (ECR) plasma, helicon wave plasma (HWP), or surface wave plasma (SWP).
  • CCP capacitively coupled plasma
  • ICP inductively coupled plasma
  • ECR electron cyclotron resonance
  • HWP helicon wave plasma
  • SWP surface wave plasma
  • the main controller 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various steps described in one or more embodiments of the disclosure.
  • the main controller 2 may control the components of the plasma processing apparatus 1 to perform the various steps described herein. In one embodiment, some or all of the components of the main controller 2 may be included in the plasma processing apparatus 1 .
  • the main controller 2 may include a processor 2 a 1 , a storage 2 a 2 , and a communication interface 2 a 3 .
  • the main controller 2 is implemented by, for example, a computer 2 a .
  • the processor 2 a 1 may perform various control operations by loading a program from the storage 2 a 2 and executing the loaded program.
  • the program includes computer-executable instructions that cause the plasma processing apparatus 1 to perform various steps included in a control method according to an exemplary embodiment (described later).
  • the program may be prestored in the storage 2 a 2 or may be obtained through a medium as appropriate.
  • the obtained program is stored into the storage 2 a 2 to be loaded from the storage 2 a 2 and executed by the processor 2 a 1 .
  • the medium may be one of various storage media readable by the computer 2 a , or a communication line connected to the communication interface 2 a 3 .
  • the processor 2 a 1 may be a central processing unit (CPU).
  • the storage 2 a 2 may include a random-access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid-state drive (SSD), or a combination of these.
  • the communication interface 2 a 3 may communicate with the plasma processing apparatus 1 through a communication line such as a local area network (LAN).
  • LAN local area network
  • FIG. 2 is a diagram of the capacitively coupled plasma processing apparatus with the structure.
  • the capacitively coupled plasma processing apparatus 1 includes the plasma processing chamber 10 , the gas supply 20 , a power supply system 30 , and the exhaust system 40 .
  • the plasma processing apparatus 1 also includes the substrate support 11 and a gas inlet unit.
  • the gas inlet unit allows at least one process gas to be introduced into the plasma processing chamber 10 .
  • the gas inlet unit includes a shower head 13 .
  • the substrate support 11 is located in the plasma processing chamber 10 .
  • the shower head 13 is located above the substrate support 11 . In one embodiment, the shower head 13 defines at least a part of the ceiling of the plasma processing chamber 10 .
  • the plasma processing chamber 10 has a plasma processing space 10 s defined by the shower head 13 , a side wall 10 a of the plasma processing chamber 10 , and the substrate support 11 .
  • the plasma processing chamber 10 is grounded.
  • the shower head 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10 .
  • the substrate support 11 includes a body 111 and a ring assembly 112 .
  • the body 111 includes a central portion 111 a for supporting a substrate W and an annular portion 111 b for supporting the ring assembly 112 .
  • the substrate W is, for example, a wafer.
  • the annular portion 111 b of the body 111 surrounds the central portion 111 a of the body 111 as viewed in plan.
  • the substrate W is placed on the central portion 111 a of the body 111 .
  • the ring assembly 112 is placed on the annular portion 111 b of the body 111 to surround the substrate W on the central portion 111 a of the body 111 .
  • the central portion 111 a is also referred to as a substrate support surface for supporting the substrate W.
  • the annular portion 111 b is also referred to as a ring support surface for supporting the ring assembly 112 .
  • the body 111 includes a base 1110 and an electrostatic chuck (ESC) 1111 .
  • the base 1110 includes a conductive member.
  • the ESC 1111 is located on the base 1110 .
  • the ESC 1111 includes a ceramic member 1111 a and an electrostatic electrode 1111 b inside the ceramic member 1111 a .
  • the ceramic member 1111 a includes the central portion 111 a .
  • the ceramic member 1111 a also includes the annular portion 111 b .
  • the annular portion 111 b may be included in a separate member surrounding the ESC 1111 , such as an annular ESC or an annular insulating member.
  • the ring assembly 112 may be located on the annular ESC or the annular insulating member, or may be located on both the ESC 1111 and the annular insulating member.
  • the ring assembly 112 includes one or more annular members.
  • one or more annular members include one or more edge rings and at least one cover ring.
  • the edge ring is formed from a conductive material or an insulating material.
  • the cover ring is formed from an insulating material.
  • the substrate support 11 may also include a temperature control module that adjusts the temperature of at least one of the ESC 1111 , the ring assembly 112 , or the substrate to a target temperature.
  • the temperature control module may include a heater, a heat transfer medium, a channel 1110 a , or a combination of these.
  • the channel 1110 a allows a flow of a heat transfer fluid such as brine or gas through it.
  • the channel 1110 a is defined in the base 1110 , and one or more heaters are located in the ceramic member 1111 a in the ESC 1111 .
  • the substrate support 11 may include a heat transfer gas supply to supply a heat transfer gas into a space between the back surface of the substrate W and the central portion 111 a.
  • the shower head 13 introduces at least one process gas from the gas supply 20 into the plasma processing space 10 s .
  • the shower head 13 has at least one gas inlet 13 a , at least one gas-diffusion compartment 13 b , and multiple gas guides 13 c .
  • the process gas supplied to the gas inlet 13 a passes through the gas-diffusion compartment 13 b and is introduced into the plasma processing space 10 s through the multiple gas guides 13 c .
  • the shower head 13 also includes at least one upper electrode.
  • the gas inlet unit may include one or more side gas injectors (SGIs) installed in one or more openings in the side wall 10 a.
  • SGIs side gas injectors
  • the gas supply 20 may include at least one gas source 21 and at least one flow controller 22 .
  • the gas supply 20 allows supply of at least one process gas from the corresponding gas source 21 to the shower head 13 through the corresponding flow controller 22 .
  • the flow controller 22 may include, for example, a mass flow controller or a pressure-based flow controller.
  • the gas supply 20 may further include at least one flow rate modulator that allows supply of at least one process gas at a modulated flow rate or in a pulsed manner.
  • the exhaust system 40 is connectable to, for example, a gas outlet 10 e in the bottom of the plasma processing chamber 10 .
  • the exhaust system 40 may include a pressure control valve and a vacuum pump.
  • the pressure control valve regulates the pressure in the plasma processing space 10 s .
  • the vacuum pump may include a turbomolecular pump, a dry pump, or a combination of these.
  • the power supply system 30 includes a radio-frequency (RF) power supply 31 and a bias power supply 32 .
  • the RF power supply 31 serves as the plasma generator 12 in one embodiment.
  • the RF power supply 31 generates source radio-frequency power RF.
  • the source radio-frequency power RF has a source frequency f RF . More specifically, the source radio-frequency power RF has a sinusoidal waveform with its frequency being the source frequency f RF .
  • the source frequency f RF may be within a range of 10 to 150 MHz.
  • the RF power supply 31 is electrically coupled to an RF electrode through a matcher 33 to provide the source radio-frequency power RF to the RF electrode.
  • the RF electrode may be the conductive member in the base 1110 , may be at least one electrode in the ceramic member 1111 a , or may be the upper electrode.
  • the matcher 33 has a variable impedance that is set to reduce reflection of the source radio-frequency power RF from a load. In response to the source radio-frequency power RF provided to the RF electrode, plasma is generated from the gas in the chamber 10 .
  • the bias power supply 32 generates electrical bias energy BE.
  • the bias power supply 32 is electrically coupled to the substrate support 11 .
  • the bias power supply 32 is electrically coupled to a bias electrode in the substrate support 11 to provide the electrical bias energy BE to the bias electrode.
  • the bias electrode may be the conductive member in the base 1110 or may be at least one electrode in the ceramic member 1111 a .
  • the electrical bias energy BE provided to the bias electrode attracts ions in the plasma to the substrate W.
  • the electrical bias energy BE has a bias frequency.
  • the bias frequency is lower than the source frequency.
  • the bias frequency may be within a range of 100 kHz to 60 MHz, or for example, 400 kHz.
  • the electrical bias energy BE is cyclically provided to the bias electrode in bias cycles (at time intervals), or waveform cycles (cycles CY), each having a duration being the inverse of the bias frequency.
  • FIG. 3 is a timing chart for the plasma processing apparatus according to one exemplary embodiment.
  • the electrical bias energy BE may be bias RF power LF having the bias frequency.
  • the electrical bias energy BE may have a sinusoidal waveform with its frequency being the bias frequency.
  • the bias power supply 32 is electrically coupled to the bias electrode through a matcher 34 .
  • the matcher 34 has a variable impedance that is set to reduce reflection of the bias RF power LF from the load.
  • the electrical bias energy BE may include a pulse PV of a voltage.
  • the waveform of the pulse PV of the electrical bias energy BE may be rectangular, triangular, or in any other shape.
  • the pulse PV of the voltage of the electrical bias energy BE has polarity that causes a potential difference between the plasma and the substrate W to draw ions in the plasma to the substrate W.
  • the pulse PV of the electrical bias energy BE may be a pulse of a negative voltage.
  • the pulse PV of the electrical bias energy BE may be a pulse of a direct current (DC) voltage from a DC power supply with its waveform shaped by a pulse unit.
  • DC direct current
  • the RF power supply 31 provides the source radio-frequency power RF in a period in which the cycle CY is repeated, or in other words, a period in which the electrical bias energy BE is cyclically provided.
  • the RF power supply 31 generates the source radio-frequency power RF having the source frequency f RF that is set to reduce the reflected wave of the source radio-frequency power RF from the load in each of multiple phase periods SP in a cycle CY.
  • the multiple phase periods SP are periods into which a cycle CY is divided.
  • the source frequency f RF in each of the multiple phase periods SP in an initial cycle CY is predetermined. More specifically, a group of source frequencies f RF in the multiple phase periods SP in the initial cycle CY is predetermined. Determining the source frequency f RF in each of the multiple phase periods SP in the initial cycle CY will be described in detail later.
  • the RF power supply 31 is synchronized with the bias power supply 32 using a synchronization signal to set the source frequency f RF for each of the multiple phase periods SP.
  • the synchronization signal may be provided from the RF power supply 31 to the bias power supply 32 or from the bias power supply 32 to the RF power supply 31 . In some embodiments, the synchronization signal may be provided from another device to the RF power supply 31 and the bias power supply 32 .
  • the plasma processing apparatus 1 further includes a sensor 35 (first sensor) and a sensor 36 (second sensor).
  • the sensor 35 measures a power level Pr of the reflected wave of the source radio-frequency power RF from the load.
  • the sensor 35 includes, for example, a directional coupler.
  • the directional coupler may be located between the RF power supply 31 and the matcher 33 .
  • the sensor 35 may also measure a power level Pf of the traveling wave of the source radio-frequency power RF.
  • the sensor 35 notifies the RF power supply 31 of the measured power level Pr of the reflected wave.
  • the sensor 35 may also notify the RF power supply 31 of the power level Pf of the traveling wave.
  • the sensor 36 includes a voltage sensor and a current sensor.
  • the sensor 36 measures a voltage V RF and a current I RF on a feed line coupling the RF power supply 31 and the RF electrode.
  • the source radio-frequency power RF is provided to the RF electrode through the feed line.
  • the sensor 36 may be located between the RF power supply 31 and the matcher 33 .
  • the RF power supply 31 is notified of the voltage V RF and the current I RF on the feed line.
  • the RF power supply 31 identifies, from the multiple phase periods SP in a cycle CY, a phase period SP MIN (refer to FIG. 3 ) having a minimum value of the power level Pr of the reflected wave.
  • the RF power supply 31 determines a reference value ⁇ being the phase difference between the voltage V RF and the current I RF in the phase period SP MIN .
  • the RF power supply 31 then performs frequency control for each of the multiple phase periods SP, or in other words, sets the source frequency f RF for each of the multiple phase periods SP, based on the result of comparison between the reference value ⁇ and the phase difference ⁇ between the voltage V RF and the current I RF in the corresponding phase period.
  • the frequency control may increase the source frequency f RF when the phase difference ⁇ between the voltage V RF and the current I RF is greater than the reference value ⁇ in each of the multiple phase periods SP. More specifically, the frequency control may change the source frequency f RF to a frequency f RF + ⁇ f when the phase difference ⁇ between the voltage V RF and the current I RF is greater than the reference value ⁇ in each of the multiple phase periods SP. The frequency control may decrease the source frequency f RF when the phase difference ⁇ is less than the reference value ⁇ . More specifically, the frequency control may change the source frequency f RF to a frequency f RF ⁇ f when the phase difference ⁇ between the voltage V RF and the current I RF is less than the reference value ⁇ in each of the multiple phase periods SP.
  • the RF power supply 31 may adjust the source frequency f RF through the frequency control by an adjustment amount ⁇ f being a predetermined fixed value in each of the multiple phase periods SP. In some embodiments, the RF power supply 31 may adjust the source frequency f RF through the frequency control by an adjustment amount ⁇ f determined based on the absolute value of the difference between the reference value ⁇ and the phase difference ⁇ in each of the multiple phase periods SP. More specifically, the RF power supply may perform frequency control to adjust the source frequency f RF by a greater adjustment amount ⁇ f for a greater absolute value of the difference between the reference value ⁇ and the phase difference ⁇ .
  • the RF power supply 31 may perform the above frequency control when the power level Pr of the reflected wave is greater than a threshold Pth in each of the multiple phase periods SP.
  • the RF power supply 31 may decrease the threshold Pth when the power levels Pr of the reflected wave in the respective multiple phase periods SP are all less than or equal to the threshold Pth in a cycle CY.
  • the threshold Pth is decreased to a threshold Pth ⁇ Pth.
  • the threshold Pth is decreased by a decrease amount ⁇ Pth that may be predetermined.
  • the RF power supply 31 may decrease the threshold Pth when the power levels Pr of the reflected wave in the respective phase periods SP are all less than or equal to the threshold Pth in two or more consecutive cycles CY.
  • the RF power supply 31 may include a signal generator 31 g and an amplifier 31 a .
  • the signal generator 31 g generates an RF signal.
  • the amplifier 31 a amplifies the RF signal from the signal generator 31 g to generate the source radio-frequency power RF.
  • the above synchronization signal may be provided from the signal generator 31 g to the bias power supply 32 .
  • the signal generator 31 g initially generates an RF signal having the source frequency f RF predetermined for each of the multiple phase periods SP.
  • the signal generator 31 g identifies the phase period SP MIN , determines the reference value ⁇ , and generates an RF signal having the source frequency f RF adjusted through the above frequency control for each of the multiple phase periods SP.
  • the signal generator 31 g may include a processor and a digital-to-analog (D/A) converter.
  • the signal generator 31 g may convert a digital signal output from the processor to an RF signal, or an analog signal, with the D/A converter.
  • the processor in the signal generator 31 g may identify the phase period SP MIN , determine the reference value ⁇ , and generate a digital signal having the source frequency f RF adjusted through the above frequency control for each of the multiple phase periods SP.
  • the reference value ⁇ is determined to be the phase difference between the voltage V RF and the current I RF in the phase period SP MIN having the minimum value of the power level Pr of the reflected wave.
  • the reference value ⁇ is determined to be the phase difference corresponding to the lowest level of the reflected wave that may contain intermodulation distortion components or harmonic components.
  • the source frequency f RF is adjusted based on the result of comparison between the reference value ⁇ and the phase difference ⁇ between the voltage V RF and the current I RF . This reduces the power level of the reflected wave of the source radio-frequency power RF.
  • FIG. 4 is a flowchart of a control method according to one exemplary embodiment.
  • the control method shown in FIG. 4 (hereafter referred to as a method MT) may be performed with the plasma processing apparatus 1 .
  • step STa the electrical bias energy BE is provided from the bias power supply 32 to the substrate support 11 .
  • the electrical bias energy BE is cyclically provided in cycles CY.
  • Step STb is performed while the electrical bias energy BE is being provided to the substrate support 11 in step STa.
  • the source radio-frequency power RF is provided from the RF power supply 31 to the RF electrode to generate plasma from the gas in the chamber 10 .
  • the initial source frequency RF of the source radio-frequency power RF in each of the multiple phase periods SP is predetermined as described above.
  • step STc the phase period SP MIN is identified as described above.
  • step STd the reference value ⁇ is determined as described above.
  • step STe the frequency control is performed for each of the multiple phase periods SP based on the result of comparison between the reference value ⁇ and the phase difference ⁇ between the voltage V RF and the current I RF in the corresponding phase period. More specifically, the source frequency f RF of the source radio-frequency power RF is set for each of the multiple phase periods SP based on the result of comparison between the reference value ⁇ and the phase difference ⁇ in the corresponding phase period SP. As described above, the frequency control may increase the source frequency f RF when the phase difference ⁇ is greater than the reference value ⁇ and decrease the source frequency f RF when the phase difference ⁇ is less than the reference value ⁇ in each of the multiple phase periods SP.
  • step STe may include steps STe 1 to STe 7 as shown in FIG. 4 .
  • n is set to 1.
  • the determination is performed as to whether a power level Pr(n) of the reflected wave is greater than the threshold Pth.
  • the symbol Pr(n) indicates the power level Pr of the reflected wave in the n-th phase period SP(n) of the multiple phase periods SP in a cycle CY.
  • step STe 6 When the power level Pr(n) of the reflected wave is less than or equal to the threshold Pth in step STe 2 , the processing advances to step STe 6 .
  • step STe 3 When the power level Pr(n) of the reflected wave is greater than the threshold Pth in step STe 2 , the processing advances to step STe 3 .
  • the method MT may eliminate step STe 2 .
  • step STe 3 the determination is performed as to whether the phase difference ⁇ (n) is greater than the reference value ⁇ .
  • the symbol ⁇ (n) indicates the phase difference ⁇ between the voltage V RF and the current I RF in the n-th phase period SP(n) of the multiple phase periods SP in a cycle CY.
  • a source frequency f RF (n) is increased in step STe 4 .
  • the symbol f RF (n) indicates the source frequency f RF for the n-th phase period SP(n) of the multiple phase periods SP in a cycle CY.
  • the source frequency f RF (n) is decreased in step STe 5 .
  • step STe 6 n is incremented by 1.
  • step STe 7 the determination is performed as to whether n is greater than N, where N is the number of phase periods SP in a cycle CY. When n is less than or equal to N, the processing in step STe 2 and subsequent steps is repeated. When n is greater than N, the processing advances to step STf.
  • step STf the determination is performed as to whether an update condition is satisfied.
  • the update condition is satisfied when the power levels Pr of the reflected wave in the respective multiple phase periods SP are all less than or equal to the threshold Pth in a cycle CY.
  • the update condition may be satisfied when the power levels Pr of the reflected wave in the respective phase periods SP are all less than or equal to the threshold Pth in two or more consecutive cycles CY.
  • the threshold Pth is decreased in step STg.
  • step STg When the update condition is not satisfied or after the threshold Pth is decreased in step STg, the processing advances to step STa.
  • the method MT may eliminate steps STf and STg.
  • step STa the electrical bias energy is provided in the subsequent cycle CY.
  • step STb the source radio-frequency power RF is provided in this cycle CY.
  • step STb the source radio-frequency power RF having the source frequency f RF set in step STe is provided for each of the multiple phase periods SP.
  • the processing in step STc and subsequent steps is repeated, until the method MT ends upon an end condition being satisfied.
  • the end condition may be specified in recipe data.
  • the source frequency f RF is determined by the RF power supply 31 (e.g., or its processor).
  • the source frequency f RF may be determined by the processor in the signal generator 31 g .
  • the source frequency f RF may be determined by another controller.
  • FIG. 5 is a timing chart for determining source frequencies in a first example.
  • the source frequency f RF is adjusted in an overlap period in which the electrical bias energy BE and the source radio-frequency power RF are both provided.
  • the overlap period includes multiple cycles CY, or specifically, M cycles CY( 1 ) to CY(M) as shown in FIG. 5 .
  • Each of the multiple cycles CY includes multiple phase periods SP, or specifically, N phase periods SP( 1 ) to SP(N).
  • a phase period SP(n) herein refers to the n-th phase period of the phase periods SP( 1 ) to SP(N).
  • a phase period SP(m, n) refers to the n-th phase period SP(n) in the m-th cycle CY(m).
  • the RF power supply 31 generates a representative value RV of the measurement values in each of the multiple phase periods SP.
  • the measurement values may be the power levels Pr of the reflected wave obtained by the sensor 35 .
  • the measurement values may be the ratios of the power levels Pr of the reflected wave to the output power level of the source radio-frequency power RF.
  • the measurement values may be the phase differences between the voltages and the currents obtained by the sensor 36 in each of the multiple phase periods SP.
  • the representative value RV may be the average or the maximum of the measurement values in each of the multiple phase periods SP.
  • a representative value RV(n) herein refers to the representative value RV obtained in the n-th phase period SP(n) of the phase periods SP( 1 ) to SP(N).
  • a representative value RV (m, n) herein refers to the representative value RV obtained in the n-th phase period in the m-the cycle CY.
  • the RF power supply 31 sets the source frequencies f RF of the source radio-frequency power RF in the identical phase periods SP(n) in multiple cycles CY to multiple different frequencies.
  • the RF power supply 31 compares the representative values RV(n) obtained in the identical phase periods SP(n) in the multiple cycles CY with one another.
  • the RF power supply 31 selects, from the multiple frequencies, the frequency that minimizes reflection of the source radio-frequency power RF.
  • the RF power supply 31 selects the frequency that minimizes the power level Pr of the reflected wave of the source radio-frequency power RF.
  • the RF power supply 31 determines the selected frequency to be the source frequency f RF for the phase period SP(n) in the subsequent cycle CY.
  • FIG. 6 is a timing chart for determining source frequencies in a second example.
  • the RF power supply 31 adjusts the source frequency f RF of the source radio-frequency power RF in the phase period SP(n) in the cycle CY(m), or the phase period SP(m, n), based on a change in the representative value RV(n).
  • the change in the representative value RV(n) is identified by setting the frequency of the source radio-frequency power RF differently in the corresponding phase periods SP(n) in two or more cycles CY preceding the cycle CY(m).
  • the two or more cycles CY preceding the cycle CY(m) include a first cycle and a second cycle.
  • the first cycle is the cycle CY(m ⁇ Q( 2 ))
  • the second cycle is the cycle CY(m ⁇ Q( 1 )) subsequent to the first cycle.
  • the value Q( 1 ) is an integer greater than or equal to 1
  • the value Q( 2 ) is an integer greater than or equal to 2
  • the RF power supply 31 sets the frequency f(m ⁇ Q( 1 ), n) of the source radio-frequency power RF in the phase period SP(m ⁇ Q( 1 ), n) to a frequency resulting from a frequency shift in a first direction from the frequency of the source radio-frequency power RF in the phase period SP(m ⁇ Q( 2 ), n).
  • the frequency shift in the first direction is either a decrease or an increase in the frequency. When the frequency shift in the first direction is a decrease in the frequency, the value ⁇ (m, n) is negative. When the frequency shift in the first direction is an increase in the frequency, the value ⁇ (m, n) is positive.
  • the multiple phase periods SP in the cycle CY(m ⁇ Q( 2 )) have the same frequency of the source radio-frequency power RF, or specifically, f 0 , but may have different frequencies.
  • the multiple phase periods SP in the cycle CY(m ⁇ Q( 1 )) have the same frequency of the source radio-frequency power RF, or specifically, a frequency decreased from f 0 , but may have a frequency increased from f 0 .
  • the RF power supply 31 identifies an increase or a decrease in the degree of reflection (e.g., the power level Pr of the reflected wave) of the source radio-frequency power RF resulting from the frequency shift based on a change between the representative value RV (m ⁇ Q( 2 ), n) and the representative value RV (m ⁇ Q( 1 ), n).
  • the RF power supply 31 sets the frequency f(m, n) to a frequency resulting from a frequency shift in the first direction from the frequency f(m ⁇ Q( 1 ), n).
  • the frequency shift amount ⁇ (m, n) in the first direction in the phase period SP(m, n) may be the same as the frequency shift amount ⁇ (m ⁇ Q( 1 ), n) in the first direction in the phase period SP(m ⁇ Q( 1 ), n). More specifically, the frequency shift amount ⁇ (m, n) may have the same absolute value as the frequency shift amount ⁇ (m ⁇ Q( 1 ), n). In some embodiments, the frequency shift amount ⁇ (m, n) may have a greater absolute value than the frequency shift amount ⁇ (m ⁇ Q( 1 ), n).
  • the frequency shift amount ⁇ (m, n) may have a greater absolute value for a greater degree of reflection in the phase period SP(m ⁇ Q( 1 ), n).
  • the frequency shift amount ⁇ (m, n) may have the absolute value determined by a function of the degree of reflection.
  • the frequency shift in the first direction can increase the degree of reflection of the source radio-frequency power RF.
  • the RF power supply 31 may set the frequency f(m, n) to a frequency resulting from a frequency shift in a second direction (the other of a decrease or an increase) from the frequency f(m ⁇ Q( 1 ), n).
  • the frequency of the source radio-frequency power RF in the phase period SP(n) in each of two or more cycles preceding the cycle CY(m) may be updated to be a frequency resulting from a frequency shift in the first direction from the frequency of the source radio-frequency power RF in the phase period SP(n) in its corresponding preceding cycle.
  • the frequency of the source radio-frequency power RF in the phase period SP(n) in the cycle CY(m) may be set to a frequency resulting from a frequency shift in the second direction.
  • the frequency of the source radio-frequency power RF in the phase period SP(n) in the cycle CY(m) may be set to a frequency resulting from a frequency shift in the second direction from the frequency of the source radio-frequency power in the earliest of the two or more cycles.
  • the RF power supply 31 may set the frequency of the source radio-frequency power RF in the phase period SP(n) in the cycle CY(m+Q( 1 )) to an intermediate frequency.
  • the cycle CY(m+Q( 1 )) is a third cycle subsequent to the cycle CY(m).
  • the intermediate frequency that may be set in the phase period SP(m+Q( 1 ), n) is between the frequencies f(m ⁇ Q( 1 ), n) and f(m, n), and may be the average value of the frequencies f(m ⁇ Q( 1 ), n) and f(m, n).
  • the degree of reflection of the source radio-frequency power RF can exceed a predetermined threshold when the intermediate frequency is used in the phase period SP(m+Q( 1 ), n).
  • the RF power supply 31 may set the frequency of the source radio-frequency power RF in the phase period SP(n) in the cycle CY(m+Q( 2 )) to a frequency resulting from a frequency shift in the second direction from the intermediate frequency.
  • the cycle CY(m+Q( 2 )) is a fourth cycle subsequent to the cycle CY(m+Q( 1 )).
  • the threshold is predetermined.
  • the frequency shift amount ⁇ (m+Q( 2 ), n) in the second direction has a greater absolute value than the frequency shift amount ⁇ (m, n) in the first direction. This avoids the situation in which the amount of reflection of the source radio-frequency power RF fails to decrease from a local minimum value.
  • the thresholds for the respective multiple phase periods SP in each of the multiple cycles CY may be the same as or different from one another.
  • the frequencies of the source radio-frequency power RF that are set for the respective phase periods SP( 1 ) to SP(N) in the cycle CY(M) are determined to be the source frequencies f RF for the respective phase periods SP( 1 ) to SP(N).
  • the source frequency f RF of the source radio-frequency power RF in each phase period SP in each cycle CY may be determined by adding a corresponding one of multiple frequency offsets to a reference frequency.
  • Each of the multiple frequency offsets has a positive value or a negative value.
  • the frequency offset that maximizes the power level of the source radio-frequency power RF to be transferred to the plasma is determined for each phase period SP.
  • the power level of the source radio-frequency power RF to be transferred to the plasma may be the difference between the power level of the traveling wave and the power level of the reflected wave of the source radio-frequency power RF.
  • the frequency offsets determined for the respective multiple phase periods SP are stored into a table.
  • the RF power supply 31 determines the source frequency f RF of the source radio-frequency power RF by adding the corresponding frequency offset stored in the table to the reference frequency.
  • the plasma processing apparatus may be an ICP plasma processing apparatus, an ECR plasma processing apparatus, an HWP plasma processing apparatus, or an SWP plasma processing apparatus. Any of these plasma processing apparatuses uses the source radio-frequency power RF to generate plasma.
  • a plasma processing apparatus comprising: a chamber;
  • the reference value is determined to be the phase difference between the voltage and the current in the phase period having the minimum value of the power level of the reflected wave.
  • the reference value is determined to be the phase difference corresponding to the lowest level of the reflected wave that may contain intermodulation distortion components or harmonic components.
  • the source frequency is adjusted based on the result of comparison between the reference value and the phase difference between the voltage and the current. This reduces the power level of the reflected wave of the source radio-frequency power.
  • a signal generator configured to generate a radio-frequency signal
  • an amplifier configured to amplify the radio-frequency signal to generate the source radio-frequency power
  • a power supply system comprising:
  • a control method comprising:
  • a storage medium storing the program according to E13.

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