US11289537B2 - Transfer substrate, method of fabricating micro light emitting diode display substrate, and micro light emitting diode display substrate - Google Patents
Transfer substrate, method of fabricating micro light emitting diode display substrate, and micro light emitting diode display substrate Download PDFInfo
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- US11289537B2 US11289537B2 US16/483,734 US201916483734A US11289537B2 US 11289537 B2 US11289537 B2 US 11289537B2 US 201916483734 A US201916483734 A US 201916483734A US 11289537 B2 US11289537 B2 US 11289537B2
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 20
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- 239000011787 zinc oxide Substances 0.000 claims description 10
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 6
- 229910052746 lanthanum Inorganic materials 0.000 claims description 6
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- 239000011777 magnesium Substances 0.000 claims description 6
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 claims description 6
- 229910021523 barium zirconate Inorganic materials 0.000 claims description 5
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 claims description 5
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- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
-
- H01L27/20—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
- H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H01L41/0986—
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/206—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using only longitudinal or thickness displacement, e.g. d33 or d31 type devices
Definitions
- the present invention relates to display technology, more particularly, to a transfer substrate, a method of fabricating a micro light emitting diode (micro LED) display substrate, and a micro light emitting diode (micro LED) display substrate.
- a transfer substrate a method of fabricating a micro light emitting diode (micro LED) display substrate, and a micro light emitting diode (micro LED) display substrate.
- micro LEDs The micro light emitting diodes
- the micro LEDs not only has the same characteristics the inorganic LEDs has, such as high efficiency, high brightness, high reliability, and fast response, but also has the characteristics the inorganic LEDs doesn't have, for example, the micro LEDs can self-illuminate without using a backlight. Comparing with the inorganic LEDs, the micro LEDs is more energy saving and thinner. It also has simpler structural and smaller size.
- the present disclosure provides a transfer substrate for transferring an array of a plurality of micro light emitting diodes (micro LEDs) onto a target substrate, comprising a base substrate; and an array of a plurality of electroactive actuators; wherein a respective one of the plurality of electroactive actuators comprises a ring-shaped frame structure substantially surrounding a central opening, the ring-shaped frame structure made of an electroactive material; and the ring-shaped frame structure is configured to undergo a reversible deformation between a first state and a second state upon a change in an electric field applied on the ring-shaped frame structure, a distance between two positions on an inner wall of the ring-shaped frame structure and across the central opening having a first value in the first state and a second value in the second state, the first value being greater than the second value.
- a transfer substrate for transferring an array of a plurality of micro light emitting diodes (micro LEDs) onto a target substrate, comprising a base substrate; and an array of a plurality of
- the array of the plurality of electroactive actuators has a pattern substantially the same as a pattern of the array of a plurality of micro LEDs; the central opening in the first state has a size greater than a size of a respective one of the plurality of micro LEDs, and the respective one of the plurality of micro LEDs being freely removable from the central opening in the first state; and the central opening in the second state has a size equal to or less than the size of the respective one of the plurality of micro LEDs, and the ring-shaped frame structure is configured to secure the respective one of the plurality of micro LEDs therein.
- the ring-shaped frame structure has a closed ring shape.
- a respective one of the plurality of electroactive actuators further comprises a controlling electrode.
- the controlling electrode comprises a first controlling sub-electrode on a first side of the ring-shaped frame structure of the respective one of the plurality of electroactive actuators, and a second controlling sub-electrode on a second side of the ring-shaped frame structure of the respective one of the plurality of electroactive actuators.
- a same row of the array of the plurality of electroactive actuators shares a same integral first controlling sub-electrode along a row direction of the army of the plurality of electroactive actuators; and the same row of the array of the plurality of electroactive actuators shares a same integral second controlling sub-electrode along the row direction of the array of the plurality of electroactive actuators.
- controlling electrode and the ring-shaped frame structure are on a same layer; and the first controlling sub-electrode is on a side of a wall of the ring-shaped frame structure away from a center of the central opening; the second controlling sub-electrode is on a side of the wall of the ring-shaped frame structure away from the center of the central opening; and the first side is substantially opposite to the second side.
- the ring-shaped frame structure is on aside of the controlling electrode away from the base substrate; and an orthographic projection of the ring-shaped frame structure on the base substrate at least partially overlaps with an orthographic projection of the controlling electrode on the base substrate.
- the electroactive material comprises a material selected from a group consisting of zinc oxide, lead magnesium niobate, lead magnesium niobate-lead titanate, lead lanthanum zirconate titanate, and lead barium zirconate titanate.
- a height of the ring-shaped frame structure along a direction perpendicular to a main surface of the base substrate is equal to or greater than one half of a height of a respective one of the plurality of micro LEDs to be transferred.
- a maximum width of the central opening between two positions on an inner wall of the ring-shaped frame structure is in a range of approximately 1 ⁇ m to approximately 100 ⁇ m; and a thickness of a wall of the ring-shaped frame structure is in a range of approximately 1 ⁇ m to approximately 100 ⁇ m.
- an electric field is not applied to the ring-shaped frame structure in the first state; upon application of an electric field on the ring-shaped frame structure, a wall of the ring-shaped frame structure is configured to expand toward a center of the central opening to reduce the distance between two positions on the inner wall of the ring-shaped frame structure from the first value to the second value; and upon removal of the electric field on the ring-shaped frame structure, the wall of the ring-shaped frame structure is configured to withdraw away from the center of the central opening to increase the distance between two positions on an inner wall of the ring-shaped frame structure from the second value to the first value.
- the present disclosure provides a method of fabricating a micro light emitting diode (micro LED) display substrate, comprising providing a mother substrate comprising an array of a plurality of micro LEDs; providing a transfer substrate comprising an array of a plurality of electroactive actuators made of an electroactive material; and transferring the array of the plurality of micro LEDs from the mother substrate onto the transfer substrate; wherein a respective one of the plurality of electroactive actuators comprises a ring-shaped frame structure substantially surrounding a central opening, the ring-shaped frame structure made of an electroactive material; the ring-shaped frame structure is configured to undergo a reversible deformation between a first state and a second state upon a change in an electric field applied on the ring-shaped frame structure, a distance between two positions on an inner wall of the ring-shaped frame structure and across the central opening having a first value in the first state and a second value in the second state, the first value being greater than the second value; and the array of the plurality of electroactive actuators
- transferring the array of the plurality of micro LEDs from the mother substrate onto the transfer substrate comprises maintaining the ring-shaped frame structure in the first state; aligning the transfer substrate and the mother substrate to allow a respective one of the plurality of micro LEDs at least partially fit into the central opening; applying an electric field on the ring-shaped frame structure to maintain the ring-shaped frame structure in the second state, thereby securing the respective one of the plurality of micro LEDs by the ring-shaped frame structure; and removing the plurality of micro LEDs from the mother substrate thereby transferring the array of the plurality of micro LEDs from the mother substrate onto the transfer substrate.
- maintaining the ring-shaped frame structure in the first state comprises applying no electric field to the ring-shaped frame structure.
- the method further comprises providing a target substrate; and transferring the array of the plurality of micro LEDs from the transfer substrate onto a target substrate.
- transferring the array of the plurality of micro LEDs from the transfer substrate onto the target substrate comprises maintaining the ring-shaped frame structure in the second state; aligning the transfer substrate and the target substrate; changing the electric field applied on the ring-shaped frame structure to maintain the ring-shaped frame structure in the first state, thereby releasing the respective one of the plurality of micro LEDs from the ring-shaped frame structure; and releasing the plurality of micro LEDs from the transfer substrate onto the target substrate.
- maintaining the ring-shaped frame structure in the second state comprises applying an electric field on the ring-shaped frame structure to expand a wall of the ring-shaped frame structure toward a center of the central opening and maintain a distance between two positions on an inner wall of the ring-shaped frame structure at the second value.
- changing the electric field applied on the ring-shaped frame structure to maintain the ring-shaped frame structure in the first state comprises removing the electric field on the ring-shaped frame structure to withdraw the wall of the ring-shaped frame structure away from the center of the central opening and maintain the distance between two positions on an inner wall of the ring-shaped frame at the first value.
- the present disclosure provides a micro light emitting diode (micro LED) display substrate, fabricated by the method described herein.
- micro LED micro light emitting diode
- FIG. 1A is a plan view of a transfer substrate in some embodiments according to the present disclosure.
- FIG. 1B is a schematic diagram of a ring-shape frame structure in some embodiments according to the present disclosure.
- FIG. 1C is a schematic diagram of a ring-shape frame structure in some embodiments according to the present disclosure.
- FIG. 2 is a plan view of a transfer substrate in a first state in some embodiments according to the present disclosure.
- FIG. 3 is a plan view of a transfer substrate in a second state in some embodiments according to the present disclosure.
- FIG. 4 is a plan view of a transfer substrate illustrating positions of a controlling electrode in some embodiments according to the present disclosure.
- FIG. 5 is a plan view of a transfer substrate illustrating positions of a controlling electrode in some embodiments according to the present disclosure.
- FIG. 6 is a plan view of a transfer substrate illustrating positions of a controlling electrode in some embodiments according to the present disclosure.
- FIG. 7 is a cross-sectional view of a transfer substrate illustrating a controlling electrode and a ring-shaped frame structure on a same layer in some embodiments according to the present disclosure.
- FIG. 8 is a cross-sectional view of a transfer substrate illustrating a ring-shaped frame structure is on a side of a controlling electrode away from a base substrate in some embodiments according to the present disclosure.
- FIG. 9 is a cross-sectional view of a transfer substrate and a mother substrate illustrating a relationship between a height of a ring-shaped frame structure and a height of a respective one of a plurality of micro LEDs in some embodiments according to the present disclosure.
- FIG. 10 is a schematic diagram illustrating a voltage provider and a voltage controller controlling a voltage applied to a controlling electrode in some embodiments according to the present disclosure.
- FIG. 11 is a flow chart illustrating a method of fabricating a transfer substrate in some embodiments according to the present disclosure.
- FIG. 12 is a flow chart illustrating a method of fabricating a transfer substrate in some embodiments according to the present disclosure.
- FIG. 13 is a flow chart illustrating a method of fabricating a micro light emitting diode display substrate in some embodiments according to the present disclosure.
- FIG. 14 is a flow chart illustrating a method of fabricating a micro light emitting diode display substrate in some embodiments according to the present disclosure.
- FIG. 15 is a flow chart illustrating a method of fabricating a micro light emitting diode display substrate in some embodiments according to the present disclosure.
- FIG. 16 is a schematic diagram illustrating an alignment between two substrates in some embodiments according to the present disclosure.
- FIG. 17 is a schematic diagram illustrating an alignment between two substrates in some embodiments according to the present disclosure.
- FIG. 18 is a schematic diagram illustrating an alignment between a transfer substrate and a mother substrate in some embodiments according to the present disclosure.
- FIG. 19 is a schematic diagram illustrating a transfer substrate is moved toward a mother substrate in some embodiments according to the present disclosure.
- FIG. 20 is a schematic diagram illustrating a ring-shaped frame structure expands toward a center of the central opening upon application of an electric field on the ring-shaped frame structure in some embodiments according to the present disclosure.
- FIG. 21 is a schematic diagram illustrating a transfer substrate is moved away from a mother substrate in some embodiments according to the present disclosure.
- FIG. 22 is a schematic diagram illustrating a transfer substrate is aligned with a target substrate in some embodiments according to the present disclosure.
- FIG. 23 is a schematic diagram illustrating a transfer substrate is moved toward a target substrate in some embodiment according to the present disclosure.
- FIG. 24 is a schematic diagram illustrating a ring-shaped frame structure withdraw away from a center of the central opening to move the plurality of micro LEDs from a transfer substrate onto a target substrate in some embodiment according to the present disclosure.
- FIG. 25 is a schematic diagram illustrating a transfer substrate is moved away from a target substrate in some embodiment according to the present disclosure.
- the method of fabricating micro LEDs includes fabricating micro LEDs on a base substrate, transferring micro LEDs to a target substrate. There are a technical barriers to transfer micro LEDs from the base substrate to the target substrate.
- the present disclosure provides, inter alia, a transfer substrate, a method of fabricating a micro light emitting diode display substrate, and micro light emitting diode display substrate that substantially obviate one or more of the problems due to limitations and disadvantages of the related art.
- the present disclosure provides a transfer substrate for transferring an array of a plurality of micro light emitting diodes (micro LEDs) onto a target substrate.
- the transfer substrate includes a base substrate, and an array of a plurality of electroactive actuators.
- a respective one of the plurality of electroactive actuators includes a ring-shaped frame structure substantially surrounding a central opening.
- the ring-shaped frame structure made of an electroactive material.
- the ring-shaped frame structure is configured to undergo a reversible deformation between a first state and a second state upon a change in an electric field applied on the ring-shaped frame structure.
- a distance between two positions on an inner wall of the ring-shaped frame structure and across the central opening has a first value in the first state and a second value in the second state.
- the first value is greater than the second value.
- substantially surrounding refers to surrounding at least 40% (e.g., at least 50%, at least 60%, at least 70%, at least 80%, at least 90%, at least 95%, at least 99%, and 100%) of a perimeter of an area.
- micro LED refers to the descriptive size, e.g. length or width, of the light emitting diode.
- “micro” LED may be on the scale of 1 ⁇ m to approximately 300 ⁇ m, or 100 ⁇ m or less.
- micro” LED is on the scale of 50 ⁇ m to 300 ⁇ m.
- embodiments of the present invention are not necessarily so limited, and that certain aspects of the embodiments may be applicable to larger micro LED devices or structures, and possibly smaller size scales.
- the term “electroactive material” refers to a material that reversibly changes one or more characteristic body dimension by an amount depending on an applied electrical voltage.
- the term “electroactive actuator” refers to an actuator in the present transfer substrate that includes an electroactive material, and is capable of reversibly changing one or more characteristic body dimension by an amount depending on an applied electrical voltage.
- the electroactive material is an electrostrictive material. Stress and strain response of the electrostrictive material to an electric field is proportional to the square of the electric field.
- the electroactive material is a piezoelectric material. Stress and strain response of the piezoelectric material to an electric field is proportional to the electric field.
- X is the stress and strain response
- R is an electrostrictive coefficient of the material
- E is a strength of the electric field applied to the electrostrictive material.
- the stress and strain response of the electrostrictive material is also affected by the thickness of the material. Within a certain range of thicknesses (e.g., in the range of approximately 0.1 mm to approximately 2 mm), X is proportional to the square of the electric field, R increases as the thickness of the material decreases. Thus, a relatively larger coefficient R results in more prominent stress and strain response X, when a same electric field is applied to the electrostrictive material.
- electrostrictive material may be used for making the electroactive layer, e.g., electrostrictive ceramics, electrostrictive polymers, etc.
- electrostrictive materials include, but are not limited to, a polyurethane containing material (e.g., a doped polyurethane material), polyvinylidene fluoride, lead magnesium niobate, lead magnesium niobate-lead titanate, lanthanum doped lead zirconate titanate, barium doped lead zirconate titanate, and various substitutes and derivatives thereof (e.g., doped with one or more dopant).
- a polyurethane containing material e.g., a doped polyurethane material
- polyvinylidene fluoride e.g., a doped polyurethane material
- lead magnesium niobate lead magnesium niobate-lead titanate
- lanthanum doped lead zirconate titanate lanthanum doped
- any appropriate piezoelectric material may be used for making the electroactive layer.
- appropriate piezoelectric materials include, but are not limited to, lead zirconium titanate, berlinite, zinc oxide, barium titanate, lead titanate, and various substitutes and derivatives thereof (e.g., doped with one or more dopant).
- FIG. 1 is a plan view of a transfer substrate in some embodiments according to the present disclosure.
- the present disclosure provides a transfer substrate 01 for transferring an array of a plurality of micro LEDs onto a target substrate.
- the transfer substrate 01 includes a base substrate 1 , and an array of a plurality of electroactive actuators EA on the base substrate 1 .
- a respective one of the plurality of electroactive actuators EA includes a ring-shaped frame structure 2 substantially surrounding a central opening S.
- the ring-shaped frame structure 2 is made of an electroactive material.
- ring refers to a structure or portion of a structure having a hole there through, including but not limited to a ring or doughnut shape.
- a ring-shape frame structure may be essentially round like a doughnut, or may be formed of a square, triangle or another shape with a hole there through.
- a ring-shape frame structure does not require that the ring shape be unbroken, and the term is intended to encompass structures that are substantially closed, but that comprise a break or a gap in the ring shape.
- the term encompasses structures that comprise cavity, e.g., a “C” and “U”-shaped cavity.
- a ring-shape frame structure may consist essentially of a single ring, or it may be a component of a larger structure having additional features, e.g., additional ring structures, or non-ring-shaped features such as corners, points, strings, etc.
- the ring-shape frame structure 2 is a closed rectangular ring.
- FIG. 1B is a schematic diagram of a ring-shape frame structure in some embodiments according to the present disclosure.
- the ring-shape frame structure 2 is a C-shaped ring.
- FIG. 1C is a schematic diagram of a ring-shape frame structure in some embodiments according to the present disclosure.
- the ring-shape frame structure 2 is a U-shaped ring.
- FIG. 2 is a plan view of a transfer substrate in a first state in some embodiments according to the present disclosure.
- FIG. 3 is a plan view of a transfer substrate in a second state in some embodiments according to the present disclosure.
- the ring-shaped frame structure 2 is configured to undergo a reversible deformation between a first state and a second state upon a change in an electric field applied on the ring-shaped frame structure 2 .
- a distance D between two positions on an inner wall of the ring-shaped frame structure 2 and across the central opening S has a first value in the first state and a second value in the second state, and the first value is greater than the second value.
- the central opening S has a width W between two inner walls of the ring-shaped frame structure 2 .
- the width W has a third value in the first state and a fourth value in the second state.
- the third value is greater than the fourth value.
- the third value is equal to the first value
- the fourth value is equal to the second value.
- the array of the plurality of electroactive actuators EA has a pattern substantially the same as a pattern of the array of a plurality of micro LEDs 5 .
- a center of a respective one of the plurality of electroactive actuators EA substantially overlaps with a center of a respective one of the plurality of micro LEDs 5 .
- the transfer substrate 01 doesn't include a plurality of micro LEDs 5 .
- the plurality of micro LEDs are shown on FIG. 2 and FIG. 3 .
- the plurality of micro LEDs 5 are disposed on a mother substrate. Referring to FIG.
- the respective one of the plurality of electroactive actuators EA has an inner boundary complementary to an outer boundary of the respective one of the plurality of micro LEDs 5 , at least in one of the first state and the second state, e.g., in the second state.
- the central opening S in the first state has a size greater than a size of a respective one of the plurality of micro LEDs 5 .
- the respective one of the plurality of micro LEDs is freely removable from the central opening S in the first state.
- the central opening S in the second state has a size equal to or less than the size of the respective one of the plurality of micro LEDs 5 .
- the ring-shaped frame structure 2 is configured to secure the respective one of the plurality of micro LEDs 5 .
- an electric field E is not applied to the ring-shaped frame structure 2 in the first state.
- the electric field E in the first state has a value smaller than a value of the electric field E in the second state.
- the ring-shaped frame structure 2 Upon application of an electric field on the ring-shaped frame structure 2 , or upon an increase of the electric field E applied on the ring-shaped frame structure 2 , the ring-shaped frame structure 2 is configured to transition from the first state to the second state.
- a wall of the ring-shaped frame structure 2 is configured to expand toward a center of the central opening S to reduce the distance D between two positions on an inner wall of the ring-shaped frame structure 2 from the first value to the second value.
- the wall of the ring-shaped frame structure 2 is configured to expand toward a center of the central opening S to reduce a width W of the central opening S between two inner walls of the ring-shaped frame structure from the first value to the second value.
- the ring-shaped frame structure 2 Upon removal of the electric field E on the ring-shaped frame structure 2 , or upon a decrease in the electric field E applied on the ring-shaped frame structure 2 , the ring-shaped frame structure 2 is configured to transition from the second state to the first state.
- the wall of the ring-shaped frame structure 2 is configured to withdraw away from the center of the central opening S to increase the distance D between two positions on an inner wall of the ring-shaped frame structure from the second value to the first value.
- the wall of the ring-shaped frame structure 2 is configured to withdraw away from the center of the central opening S to increase the width W of the central opening S between two inner walls of the ring-shaped frame structure from the second value to the first value.
- an electric field E is not applied to the ring-shaped frame structure 2 in the second state.
- the electric field E in the second state has a value smaller than a value of the electric field E in the first state.
- the ring-shaped frame structure 2 Upon application of an electric field on the ring-shaped frame structure 2 , or upon an increase of the electric field E applied on the ring-shaped frame structure 2 , the ring-shaped frame structure 2 is configured to transition from the second state to the first state. Accordingly, a wall of the ring-shaped frame structure 2 is configured to withdraw away from a center of the central opening S to increase the distance D between two positions on an inner wall of the ring-shaped frame structure 2 from the second value to the first value. In another example, the wall of the ring-shaped frame structure 2 is configured to withdraw away from a center of the central opening S to increase a width W of the central opening S between two inner walls of the ring-shaped frame structure from the second value to the first value.
- the ring-shaped frame structure 2 Upon removal of the electric field E on the ring-shaped frame structure 2 , or upon a decrease in the electric field E applied on the ring-shaped frame structure 2 , the ring-shaped frame structure 2 is configured to transition from the first state to the second state. Accordingly, the wall of the ring-shaped frame structure 2 is configured to expand toward the center of the central opening S to reduce the distance D between two positions on an inner wall of the ring-shaped frame structure from the first value to the second value. In another example, the wall of the ring-shaped frame structure 2 is configured to expand toward the center of the central opening S to reduce the width W of the central opening S between two inner walls of the ring-shaped frame structure from the first value to the second value.
- the transfer substrate 01 is used for transfer a plurality of micro LEDs from a mother substrate to a target substrate.
- the mother substrate includes a plurality of micro LEDs fabricated on a growth substrate
- the target substrate is a thin film transistor array substrate including a plurality of thin film transistors for driving light emission of the plurality of micro LEDs.
- an electric field E is not applied to the ring-shaped frame structure 2 , or only a relatively small electrical field is applied on the ring-shaped frame structure 2
- an orthographic projection of the central opening S on a base substrate 1 has a size greater than a size of an orthographic projection of the respective one of the plurality of micro LEDs 5 on the base substrate 1 .
- an electric field E is applied to the ring-shaped frame structure 2 , or the electric field E applied to the ring-shaped frame structure 2 is increased, a wall of the ring-shaped frame structure 2 expands toward the center of the central opening S, the orthographic projection of the central opening S on the base substrate 1 has a size equal or less than the size of the orthographic projection of the respective one of the plurality of micro LEDs 5 on the base substrate 1 .
- the ring-shaped frame structure 2 can secure the respective one of the plurality of micro LEDs 5 , and subsequently the plurality of the micro LEDs 5 may be removed from the mother substrate. After the transfer substrate 01 is moved and aligned with the target substrate, the electric filed E is removed or decreased. The wall of the ring-shaped frame structure 2 withdraws away from the center of the central opening S, the respective one of the plurality of micro LEDs 5 can be freely removable from the central opening S onto the target substrate. The plurality of the micro LEDs 5 can be effectively and accurately transferred from the mother substrate to the target substrate.
- the shape and/or size of respective one of the plurality of micro LEDs 5 is required to be complementary to the shape and/or size of the ring-shaped frame structure 2 so that the respective one of the plurality of micro LEDs 5 can be fit into the ring-shaped frame structure 2 in at least one state, e.g., in the first state.
- the ring-shaped frame structures e.g. the plurality of electroactive actuators EA
- the ring-shaped frame structure 2 may have various shapes.
- suitable shapes of the ring-shaped frame structure 2 include, but are not limited to a square shape, a rectangular shape, a circular shape, a trapezoidal shape, a closed ring shape, or an open ring shape.
- the ring-shaped frame structure 2 has a closed ring shape. In at least one state, the respective one of the plurality of micro LEDs 5 is surrounded by a wall of the ring-shaped frame structure 2 .
- the wall of the ring-shaped frame structure 2 expands toward the center of the central opening S to secure the respective one of the plurality of micro LEDs.
- the ring-shaped frame structure 2 is formed by two C-shaped structures whose openings facing each other.
- the ring-shaped frame structure 2 is formed by two U-shaped structures whose openings facing each other.
- the ring-shaped frame structure 2 is formed by two linear bar facing each other.
- the ring-shaped frame structure 2 is a rectangular ring structure.
- a width of the ring-shaped frame structure 2 is A.
- a length of the ring-shaped frame structure 2 is B.
- a shortest distance between a position on a boundary of the respective one of the plurality of micro LEDs 5 and a position of an inner wall of the length of the ring-shaped frame structure 2 is a.
- a shortest distance between a position on a boundary of the respective one of the plurality of micro LEDs 5 and a position of an inner wall of the width of the ring-shaped frame structure 2 is b.
- the ring-shaped frame structures may be formed to have various appropriate arrangement patterns, e.g. various appropriate arrangement patterns of the plurality of electroactive actuators EA.
- suitable arrangement patterns of the ring-shaped frame structures include, but are not limited to an array pattern having a plurality of rows of electroactive actuators EA and a plurality of columns of electroactive actuators EA.
- the ring-shaped frame structure 2 is made of an electroactive material.
- the electroactive material can expend when an electric field is applied on it, and shrink when the electric field is removed from the electroactive material.
- electroactive materials may be used for making the ring-shaped frame structure 2 .
- electroactive materials suitable for making the ring-shaped frame structure 2 include, but are not limited to, zinc oxide, lead magnesium niobate, lead magnesium niobate-lead titanate, lead lanthanum zirconate titanate, lead barium zirconate titanate, lead zirconate titanate.
- the ring-shaped frame structure 2 further includes a matrix through which the electroactive material is dispersed. Examples of matrix material include various polymers such as acrylate, silicone rubber, and polyurethane.
- the ring-shaped frame structure 2 may be made of zinc oxide. Zinc oxide is strength, and has good piezoelectric properties, and good optical properties.
- the ring-shaped frame structure 2 made of zinc oxide has a strength sufficient to secure and move the respective one of the plurality of micro LEDs without damaging the ring-shaped frame structure 2 .
- the wall of the ring-shaped frame structure 2 made of zinc oxide can significantly expand to secure the respective one of the plurality of the micro LEDs.
- FIG. 4 is a plan view of a transfer substrate illustrating positions of a controlling electrode in some embodiments according to the present disclosure.
- a respective one of the plurality of electroactive actuators EA further includes a controlling electrode 3 .
- the plurality of electroactive actuators EA are disposed in array on the base substrate 1 , e.g. a plurality of ring-shaped frame structures 2 respectively correspond to the plurality of electroactive actuators EA are disposed in array on the base substrate 1 .
- the controlling electrode 3 is configured to apply an electric field on the ring-shaped frame structure 2 .
- the controlling electrode 3 includes a first controlling sub-electrode 31 on a first side S 1 of the ring-shaped frame structure 2 of the respective one of the plurality of electroactive actuators EA.
- the controlling electrode 3 includes a second controlling sub-electrode 32 on a second side S 2 of the ring-shaped frame structure 2 of the respective one of the plurality of electroactive actuators EA.
- the first side S 1 of the ring-shaped frame structure 2 is opposing to the second side S 2 of the ring-shaped frame structure 2 .
- first controlling sub-electrodes for respectively controlling two adjacent ring-shaped frame structures are separated from each other.
- second controlling sub-electrodes for respectively controlling two adjacent ring-shaped frame structures are separated from each other.
- a first controlling sub-electrode 31 is disposed on a first side S 1 of a ring-shaped frame structure 2 along a direction from B to B′
- a second controlling sub-electrode 32 is disposed on a second side S 2 of the ring-shaped frame structure 2 along the direction from B to B′.
- the first controlling sub-electrode 31 has a length along the direction from B to B′ equal or greater than a length of the first side S 1 .
- the first controlling sub-electrode 31 for controlling a respective one of the ring-shaped frame structures 21 is not connected with an adjacent first controlling sub-electrode 33 for controlling an adjacent ring-shaped frame structures 21 .
- the second controlling sub-electrode 32 for controlling a respective one of the ring-shaped frame structures 21 is not connected with an adjacent second controlling sub-electrode 34 for controlling the adjacent ring-shaped frame structures 21 .
- the transfer substrate 01 further includes a plurality of signal lines configured to independently provide voltage signals to the controlling electrode, e.g., provide voltage signals independently to each of the controlling sub-electrodes.
- FIG. 5 is a plan view of a transfer substrate illustrating positions of a controlling electrode in some embodiments according to the present disclosure.
- a same column of the array of the plurality of electroactive actuators EA shares a same integral first controlling sub-electrode 35 along a column direction of the army of the plurality of electroactive actuators EA.
- the same column of the array of the plurality of electroactive actuators EA shares a same integral second controlling sub-electrode 36 along the column direction of the array of the plurality of electroactive actuators EA. Designing the first controlling sub-electrode and the second controlling sub-electrode to extend along a column direction of the array of the plurality of electroactive actuators would simplify the structure of circuits and the process of fabricating the transfer substrate.
- the integral first controlling sub-electrode 35 extends along the direction from B to B′
- the integral second controlling sub-electrode 36 extends along the direction from B to B′.
- FIG. 6 is a plan view of a transfer substrate illustrating positions of a controlling electrode in some embodiments according to the present disclosure.
- a same row of the array of the plurality of electroactive actuators EA shares a same integral first controlling sub-electrode 35 along a row direction of the array of the plurality of electroactive actuators EA.
- the same row of the array of the plurality of electroactive actuators EA shares a same integral second controlling sub-electrode 36 along the row direction of the array of the plurality of electroactive actuators EA. Designing the first controlling sub-electrode and the second controlling sub-electrode to extend along a row direction of the array of the plurality of electroactive actuators would simplify the structure of circuits and the process of fabricating the transfer substrate.
- the integral first controlling sub-electrode 35 extends along the direction from A to A′
- the integral second controlling sub-electrode 36 extends along the direction from A to A′.
- shapes of the integral first controlling sub-electrode 35 and the integral second controlling sub-electrode 36 are a strip shapes or bar shapes.
- the integral first controlling sub-electrode 35 and the integral second controlling sub-electrode 36 are made of tin indium oxide.
- a maximum width Wmax of the central opening S between two positions on an inner wall of the ring-shaped frame structure 2 is in a range of approximately 1 ⁇ m to approximately 100 ⁇ m, e.g., approximately 1 ⁇ m to approximately 10 ⁇ m, approximately 10 m to approximately 20 ⁇ m, approximately 20 ⁇ m to approximately 30 ⁇ m, approximately 30 ⁇ m to approximately 40 ⁇ m, approximately 40 ⁇ m to approximately 50 ⁇ m, approximately 50 ⁇ m to approximately 60 ⁇ m, approximately 60 ⁇ m to approximately 70 ⁇ m, approximately 70 ⁇ m to approximately 80 ⁇ m, approximately 80 ⁇ m to approximately 90 ⁇ m, approximately 90 ⁇ m to approximately 100 ⁇ m.
- the central opening S in FIG. 4 has rectangular shape, the maximum width Wmax of the central opening S between two positions on an inner wall of the ring-shaped frame structure is a length of a diagonal of the rectangular shape.
- the central opening S has a round shape, the maximum width Wmax of the central opening S between two positions on an inner wall of the ring-shaped frame structure is a diameter of the round shape.
- a thickness d of a wall of the ring-shaped frame structure 2 is in a range of approximately 1 ⁇ m to approximately 100 ⁇ m, e.g., approximately 1 ⁇ m to approximately 10 ⁇ m, approximately 10 ⁇ m to approximately 20 ⁇ m, approximately 20 ⁇ m to approximately 30 ⁇ m, approximately 30 ⁇ m to approximately 40 ⁇ m, approximately 40 ⁇ m to approximately 50 ⁇ m, approximately 50 ⁇ m to approximately 60 ⁇ m, approximately 60 ⁇ m to approximately 70 ⁇ m, approximately 70 ⁇ m to approximately 80 ⁇ m, approximately 80 ⁇ m to approximately 90 ⁇ m, approximately 90 ⁇ m to approximately 100 ⁇ m.
- the thickness d of the wall of the ring-shaped frame structure 2 within a range of approximately 1 ⁇ m to approximately 100 ⁇ m allows the ring-shaped frame structure 2 to firmly secure and move a respective one of the plurality of micro LEDs.
- the thickness d of the wall of the ring-shaped frame structure 2 within a range of approximately 1 ⁇ m to approximately 100 ⁇ m can match the distribution density of the micro LEDs on the mother substrate. If the ring-shaped frame structure 2 is too thin, it can be easily damaged and cannot perform the process of transfer.
- FIG. 7 is a cross-sectional view of a transfer substrate illustrating a controlling electrode and a ring-shaped frame structure on a same layer in some embodiments according to the present disclosure.
- the controlling electrode 3 and the ring-shaped frame structure 2 are on a same layer.
- the first controlling sub-electrode 31 is on a side of a wall of the ring-shaped frame structure 2 away from a center of the central opening S.
- the second controlling sub-electrode 32 is on a side of a wall of the ring-shaped frame structure 2 away from the center of the central opening S.
- the first controlling sub-electrode 31 is on a first side of the ring-shaped frame structure 2 of the respective one of the plurality of electroactive actuators
- the second controlling sub-electrode 32 is on a second side of the ring-shaped frame structure 2 of the respective one of the plurality of electroactive actuators.
- the first side is substantially opposite to the second side.
- FIG. 8 is a cross-sectional view of a transfer substrate illustrating a ring-shaped frame structure is on a side of a controlling electrode away from a base substrate in some embodiments according to the present disclosure.
- the ring-shaped frame structure 2 is on a side of the controlling electrode 3 away from the base substrate 1 .
- an orthographic projection of the ring-shaped frame structure 2 on the base substrate 1 at least partially overlaps with an orthographic projection of the controlling electrode 3 on the base substrate 1 .
- the orthographic projection of the controlling electrode 3 on the base substrate 1 covers the orthographic projection of the ring-shaped fame structure 2 on the base substrate 1 .
- the orthographic projection of the ring-shaped frame structure 2 on the base substrate 1 covers the orthographic projection of the controlling electrode 3 on the base substrate 1 .
- FIG. 9 is a cross-sectional view of a transfer substrate and a mother substrate illustrating a relationship between a height of a ring-shaped frame structure and a height of a respective one of a plurality of micro LEDs in some embodiments according to the present disclosure.
- a height H 1 of the ring-shaped frame structure 2 along a direction perpendicular to a main surface M 1 of the base substrate 1 is equal to or greater than one half of a height H 2 of a respective one of the plurality of micro LEDs 5 (relative to a main surface M 2 of the mother substrate 4 ) to be transferred.
- the ring-shaped frame structure 2 is a height sufficient to secure and move the respective one of the plurality of micro LEDs 5 from the mother substrate 4 , and prevent the respective one of the plurality of micro LEDs 5 from contacting with the transfer substrate 01 , as inadvertent contacting may cause damages to the respective one of the plurality of LEDs 5 .
- FIG. 10 is a schematic diagram illustrating a voltage provider and a voltage controller controlling a voltage applied to a controlling electrode in some embodiments according to the present disclosure.
- a respective one of the plurality of electroactive actuators EA further includes a voltage provider 70 providing a voltage to the controlling electrode 3 ; and a voltage controller 60 detecting the voltage applied to the controlling electrode 3 and sending feedback to the voltage provider 70 .
- the voltage provider 70 adjusts the voltage according to the feedback from the voltage controller 60 .
- the voltage controller 60 obtains a first voltage allowing the distance between two positions on an inner wall of the ring-shaped frame structure 2 having a first value in the first state, and a second voltage allowing the distance between two positions on an inner wall of the ring-shaped frame structure 2 having a second value in the second state.
- the voltage controller 60 calculates a difference between the first voltage and the voltage applied to the controlling electrode 3 to send a feedback to the voltage provider 70 .
- the voltage controller 60 calculates a difference between the second voltage and the voltage applied to the controlling electrode 3 to send a feedback to the voltage provider 70 .
- the voltage provider 70 applies a voltage on the controlling electroder 3 .
- the voltager controller 60 detects and obtains the value of the voltage applied on the controlling electrode 3 .
- the voltage controller 60 compares the value of the voltage applied on the controlling electrode 3 with the value of the second voltage. When the value of the voltage applied on the controlling electrode 3 is greater than the value of the second voltage, the voltage controller 60 sends a feedback to the voltage provider 70 to decrease the value of the voltage applied on the controlling electrode 3 . When the value of the voltage applied on the controlling electrode 3 is smaller than the value of the second voltage, the voltage controller 60 sends a feed back to the voltage provider 70 to increase the value of the voltage applied on the controlling electroder 3 .
- the voltage provider 70 applies a voltage on the controlling electroder 3 .
- the voltager controller 60 detects and obtains the value of the voltage applied on the controlling electrode 3 .
- the voltage controller 60 compares the value of the voltage applied on the controlling electrode 3 with the value of the first voltage. When the value of the voltage applied on the controlling electrode 3 is greater than the value of the first voltage, the voltage controller 60 sends a feedback to the voltage provider 70 to decrease the value of the voltage applied on the controlling electrode 3 . When the value of the voltage applied on the controlling electrode 3 is smaller than the value of the first voltage, the voltage controller 60 sends a feed back to the voltage provider 70 to increase the value of the voltage applied on the controlling electroder 3 .
- FIG. 11 is a flow chart illustrating a method of fabricating a transfer substrate in some embodiments according to the present disclosure.
- a method of fabricating a transfer substrate includes forming an electroactive material layer on a base substrate; and forming an array of a plurality of electroactive actuators on a base substrate.
- forming a respective one of the plurality of electroactive actuators includes forming a ring-shaped frame structure substantially surrounding a central opening, the ring-shaped frame structure made of an electroactive material.
- the ring-shaped frame structure is formed to undergo a reversible deformation between a first state and a second state upon a change in an electric field applied on the ring-shaped frame structure.
- a distance between two positions on an inner wall of the ring-shaped frame structure and across the central opening has a first value in the first state and a second value in the second state. The first value is greater than the second value.
- the central opening has a width between two inner walls of the ring-shaped frame structure, the width having a first value in the first state and a second value in the second state. The first value is greater than the second value.
- the array of the plurality of electroactive actuators has a pattern substantially the same as a pattern of the array of a plurality of micro LEDs.
- a center of a respective one of the plurality of electroactive actuators substantially overlaps with a center of a respective one of the plurality of micro LEDs.
- the electroactive material layer is etched using a first photolithography process to form a plurality of ring-shaped frame structures.
- the plurality of ring-shaped frame structures are formed in an array pattern.
- FIG. 12 is a flow chart illustrating a method of fabricating a transfer substrate in some embodiments according to the present disclosure.
- the method of fabricating the transfer substrate before forming the electroactive material layer on a base substrate, the method of fabricating the transfer substrate further includes forming a first controlling sub-electrode and a second controlling sub-electrode using a second photolithography process.
- the ring-shaped frame structure is formed so that the first controlling sub-electrode is on a first side of the ring-shaped frame structure and the second controlling sub-electrode is on a second side of the ring-shaped frame structure.
- the present disclosure also provides a method of fabricating a micro light emitting diode display substrate.
- FIG. 13 is a flow chart illustrating a method of fabricating a micro light emitting diode (micro LED) display substrate in some embodiments according to the present disclosure.
- the method of fabricating a micro LED display substrate includes providing a mother substrate including an array of a plurality of micro LEDs; providing a transfer substrate including an array of a plurality of electroactive actuators made of an electroactive material; and transferring the array of the plurality of micro LEDs from the mother substrate onto the transfer substrate.
- a respective one of the plurality of electroactive actuators includes a ring-shaped frame structure substantially surrounding a central opening, the ring-shaped frame structure is made of an electroactive material.
- the method further includes changing an electric field applied to the ring-shaped frame structure to render the ring-shaped frame structure to undergo a reversible deformation between a first state and a second state upon a change in an electric field applied on the ring-shaped frame structure.
- a distance between two positions on an inner wall of the ring-shaped frame structure and across the central opening is configured to change between a first value in the first state and a second value in the second state.
- the first value is greater than the second value.
- the array of the plurality of electroactive actuators has a pattern substantially the same as a pattern of the array of a plurality of micro LEDs.
- FIG. 14 is a flow chart illustrating a method of fabricating a micro light emitting diode display substrate in some embodiments according to the present disclosure.
- transferring the array of the plurality of micro LEDs from the mother substrate onto the transfer substrate includes maintaining the ring-shaped frame structure in the first state; aligning the transfer substrate and the mother substrate to allow a respective one of the plurality of micro LEDs at least partially fit into the central opening; applying an electric field on the ring-shaped frame structure to maintain the ring-shaped frame structure in the second state, thereby securing the respective one of the plurality of micro LEDs by the ring-shaped frame structure; and removing the plurality of micro LEDs from the mother substrate thereby transferring the array of the plurality of micro LEDs from the mother substrate onto the transfer substrate.
- maintaining the ring-shaped frame structure in the first state includes applying no electric field to the ring-shaped frame structure.
- maintaining the ring-shaped frame structure in the first state includes applying an electric field to the ring-shaped frame structure with a value smaller than the value of the electric field applied in the second state.
- aligning the transfer substrate and the mother substrate includes moving the transfer substrate to a position above the mother substrate, aligning a respective one of the plurality of micro LEDs with a corresponding ring-shaped frame structure, and moving the transfer substrate toward the mother substrate so that the respective one of the plurality of micro LEDs at least partially fit into the central opening of the corresponding ring-shaped frame structure.
- applying an electric field on the ring-shaped frame structure allows a wall of the ring-shaped frame structure to expand toward a center of the central opening to reduce the distance between two positions on an inner wall of the ring-shaped frame structure from the first value to the second value.
- the ring-shaped frame structure secures the respective one of the plurality of micro LEDs.
- a first controlling sub-electrode is formed on a first side of the ring-shaped frame structure of the respective one of the plurality of electroactive actuators
- a second controlling sub-electrode is formed on a second side of the ring-shaped frame structure of the respective one of the plurality of electroactive actuators. Electricity is applied on the first controlling sub-electrode and the second controlling sub-electrode to allow the ring-shaped frame structure to perform a reversible deformation.
- FIG. 15 is a flowchart illustrating a method of fabricating a micro light emitting diode display substrate in some embodiments according to the present disclosure.
- transferring the array of the plurality of micro LEDs from the transfer substrate onto a target substrate includes providing a target substrate, maintaining the ring-shaped frame structure in the second state; aligning the transfer substrate and the target substrate; changing the electric field applied on the ring-shaped frame structure to maintain the ring-shaped frame structure in the first state, thereby releasing the respective one of the plurality of micro LEDs from the ring-shaped frame structure; and releasing the plurality of micro LEDs from the transfer substrate onto the target substrate.
- maintaining the ring-shaped frame structure in the second state includes applying an electric field on the ring-shaped frame structure to expand a wall of the ring-shaped frame structure toward a center of the central opening and maintain a distance between two positions on an inner wall of the ring-shaped frame structure at the second value.
- aligning the transfer substrate and the target substrate includes moving the transfer substrate in a direction away from the mother substrate, moving the transfer substrate to a position above the target substrate, aligning a respective one of the plurality of micro LEDs with one or more bonding pads on the target substrate, and moving the target substrate toward the target substrate.
- changing the electric field applied on the ring-shaped frame structure to maintain the ring-shaped frame structure in the first state includes removing the electric field on the ring-shaped frame structure to withdraw the wall of the ring-shaped frame structure away from the center of the central opening and maintain the distance between two positions on an inner wall of the ring-shaped frame at the first value.
- aligning the transfer substrate and the mother substrate includes performing a first alignment between the transfer substrate and the mother substrate using a first alignment mark; and performing a second alignment between the transfer substrate and the mother substrate using a second alignment mark.
- a width of the first alignment mark is greater than a width of the second alignment mark.
- aligning the transfer substrate and the target substrate includes performing a first alignment between the transfer substrate and the target substrate using a first alignment mark; and performing a second alignment between the transfer substrate and the target substrate using a second alignment mark.
- a width of the first alignment mark is greater than a width of the second alignment mark.
- FIG. 16 is a schematic diagram illustrating an alignment between two substrates in some embodiments according to the present disclosure.
- the first alignment mark used in aligning two substrates has a width of approximately 0.1 mm.
- Various shapes may be used as the first alignment mark to align two substrates.
- the first alignment mark has two first sub-marks having complementary shapes.
- one of the two first sub-marks may have a cross shape.
- FIG. 17 is a schematic diagram illustrating an alignment between two substrates in some embodiments according to the present disclosure.
- the second alignment mark used in aligning two substrates has a width of approximately 6 ⁇ m.
- Various shapes may be used as the second alignment mark to align two substrates.
- the second alignment mark has two second sub-marks having complementary shapes.
- a sub-second mark on one substrate should has a shape complementary to the other sub-second mark on the other substrate.
- FIG. 18 is a schematic diagram illustrating an alignment between a transfer substrate and a mother substrate in some embodiments according to the present disclosure.
- a transfer substrate 01 is move to a position above the mother substrate 4 .
- a respective one of the plurality of micro LEDs 5 is aligned to at least partially fit into the central opening S of the ring-shaped frame structure 2 .
- FIG. 19 is a schematic diagram illustrating a transfer substrate is moved toward a mother substrate in some embodiments according to the present disclosure. Referring to FIG. 19 , in some embodiments, the transfer substrate 01 is moved toward the mother substrate 4 .
- FIG. 20 is a schematic diagram illustrating a ring-shaped frame structure expands toward a center of the central opening upon application of an electric field on the ring-shaped frame structure in some embodiments according to the present disclosure.
- electricity is applied to the first controlling sub-electrode 31 and the second controlling sub-electrode 32 , so that an electric field E is applied on the ring-shaped frame structure 2 .
- an electric field E is applied on the ring-shaped frame structure 2 .
- a wall of the ring-shaped frame structure 2 expands to a center of the central opening to secure the respective one of the plurality of micro LEDs 5 .
- FIG. 21 is a schematic diagram illustrating a transfer substrate is moved away from a mother substrate in some embodiments according to the present disclosure. Referring to FIG. 21 , in some embodiments, the transfer substrate 01 is moved in a direction away from the mother substrate 4 .
- FIG. 22 is a schematic diagram illustrating a transfer substrate is aligned with a target substrate in some embodiments according to the present disclosure. Referring to FIG. 22 , in some embodiments, the transfer substrate 01 is moved to a position above a target substrate 6 .
- FIG. 23 is a schematic diagram illustrating a transfer substrate is moved toward a target substrate in some embodiment according to the present disclosure. Referring to FIG. 23 , in some embodiments, the transfer substrate 01 is moved toward the target substrate 6 .
- FIG. 24 is a schematic diagram illustrating a ring-shaped frame structure withdraw away from a center of the central opening to move the plurality of micro LEDs from a transfer substrate onto a target substrate in some embodiment according to the present disclosure.
- electricity is not applied to both the first controlling sub-electrode 31 and the second controlling sub-electrode 32 .
- the electric field E is removed from the ring-shaped frame structure, a wall of the ring-shaped frame structure is withdrawn away from a center of the central opening S, and the respective one of the plurality of micro LEDs 5 is moved from the transfer substrate 01 and disposed on the target substrate 6 .
- FIG. 25 is a schematic diagram illustrating a transfer substrate is moved away from a target substrate in some embodiment according to the present disclosure. Referring to FIG. 25 , in some embodiments, the transfer substrate 01 is moved in a direction away from the target substrate 6 .
- a transfer substrate include a base substrate, an array of a plurality of electroactive actuators.
- a respective one of the plurality of electroactive actuators includes a ring-shaped frame structure substantially surrounding a central opening.
- the ring-shaped frame structure is configured to undergo a reversible deformation between a first state and a second state upon a change in an electric field applied on the ring-shaped frame structure.
- a distance between two positions on an inner wall of the ring-shaped frame structure and across the central opening has a first value in the first state and a second value in the second state. The first value is greater than the second value.
- an orthographic projection of the central opening on a mother substrate is greater than an orthographic projection of a respective one of the plurality of micro LEDs on the mother substrate.
- the respective one of the plurality of micro LEDs can be fit into the central opening.
- a wall of the ring-shaped frame structure doesn't contact with the respective one of the plurality of micro LEDs.
- the wall of the ring-shaped frame structure expands toward a center of the central openings.
- the orthographic projection of the central opening on the mother substrate has a size equal or smaller than the size of the orthographic projection of the respective one of the plurality of micro LEDs, the ring-shaped frame structure can secure the respective one of the plurality of micro LEDs, and the respective one of the plurality of micro LEDs can be moved from the mother substrate.
- the electric field is removed from the ring-shaped frame structure, the wall of the ring-shaped frame structure is withdrawn away from a center of the central opening, and the respective one of the plurality of micro LEDs is moved from the transfer substrate and disposed on the target substrate.
- the process may efficiently and accurately transfer the plurality of micro LEDs from the mother substrate to the target substrate.
- the present disclosure also provides a micro LED display substrate fabricated by a method described herein.
- a micro LED display substrate is fabricated by method includes providing a mother substrate including an array of a plurality of micro LEDs; providing a transfer substrate including an array of a plurality of electroactive actuators made of an electroactive material; and transferring the array of the plurality of micro LEDs from the mother substrate onto the transfer substrate.
- a respective one of the plurality of electroactive actuators includes a ring-shaped frame structure substantially surrounding a central opening, the ring-shaped frame structure made of an electroactive material.
- the ring-shaped frame structure is configured to undergo a reversible deformation between a first state and a second state upon a change in an electric field applied on the ring-shaped frame structure.
- a distance between two positions on an inner wall of the ring-shaped frame structure and across the central opening has a first value in the first state and a second value in the second state.
- the first value is greater than the second value.
- the array of the plurality of electroactive actuators has a pattern substantially the same as a pattern of the array of a plurality of micro LEDs.
- the micro LED display substrate is fabricated by method includes maintaining the ring-shaped frame structure in the first state; aligning the transfer substrate and the mother substrate to allow a respective one of the plurality of micro LEDs at least partially fit into the central opening; applying an electric field on the ring-shaped frame structure to maintain the ring-shaped frame structure in the second state, thereby securing the respective one of the plurality of micro LEDs by the ring-shaped frame structure; and removing the plurality of micro LEDs from the mother substrate thereby transferring the array of the plurality of micro LEDs from the mother substrate onto the transfer substrate.
- maintaining the ring-shaped frame structure in the first state includes applying no electric field to the ring-shaped frame structure.
- the micro LED display substrate is fabricated by method includes providing a target substrate; and transferring the array of the plurality of micro LEDs from the transfer substrate onto a target substrate.
- transferring the array of the plurality of micro LEDs from the transfer substrate onto the target substrate includes maintaining the ring-shaped frame structure in the second state; aligning the transfer substrate and the target substrate; changing the electric field applied on the ring-shaped frame structure to maintain the ring-shaped frame structure in the first state, thereby releasing the respective one of the plurality of micro LEDs from the ring-shaped frame structure; and releasing the plurality of micro LEDs from the transfer substrate onto the target substrate.
- maintaining the ring-shaped frame structure in the second state includes applying an electric field on the ring-shaped frame structure to expand a wall of the ring-shaped frame structure toward a center of the central opening and maintain a distance between two positions on an inner wall of the ring-shaped frame structure at the second value.
- changing the electric field applied on the ring-shaped frame structure to maintain the ring-shaped frame structure in the first state includes removing the electric field on the ring-shaped frame structure to withdraw the wall of the ring-shaped frame structure away from the center of the central opening and maintain the distance between two positions on an inner wall of the ring-shaped frame at the first value
- the micro LED display substrate is an array substrate including a plurality of signal lines such as a plurality of gate lines and a plurality of data lines.
- the present disclosure also provides a display panel containing the micro LED display substrate described herein.
- the display panel is a liquid crystal display panel.
- the present disclosure also provides a display apparatus including the display panel described herein, and one or more integrated circuits connected to the display panel.
- display apparatuses include, but are not limited to, an electronic paper, a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital album, a GPS, etc.
- the term “the invention”, “the present invention” or the like does not necessarily limit the claim scope to a specific embodiment, and the reference to exemplary embodiments of the invention does not imply a limitation on the invention, and no such limitation is to be inferred.
- the invention is limited only by the spirit and scope of the appended claims. Moreover, these claims may refer to use “first”, “second”, etc. following with noun or element. Such terms should be understood as a nomenclature and should not be construed as giving the limitation on the number of the elements modified by such nomenclature unless specific number has been given. Any advantages and benefits described may not apply to all embodiments of the invention.
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Abstract
Description
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CN201811129672.7A CN109273459B (en) | 2018-09-27 | 2018-09-27 | Transfer substrate, manufacturing method and transfer method |
CN201811129672.7 | 2018-09-27 | ||
PCT/CN2019/074840 WO2020062750A1 (en) | 2018-09-27 | 2019-02-12 | Transfer substrate, method of fabricating micro light emitting diode display substrate, and micro light emitting diode display substrate |
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US20210335634A1 US20210335634A1 (en) | 2021-10-28 |
US11289537B2 true US11289537B2 (en) | 2022-03-29 |
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CN109273459B (en) * | 2018-09-27 | 2021-01-08 | 京东方科技集团股份有限公司 | Transfer substrate, manufacturing method and transfer method |
CN109920754B (en) * | 2019-03-28 | 2021-01-12 | 京东方科技集团股份有限公司 | Mass transfer head, transfer equipment and transfer method of light-emitting diode chip |
CN109950194B (en) * | 2019-04-11 | 2021-04-16 | 京东方科技集团股份有限公司 | Chip transfer substrate and chip transfer method |
CN109830191B (en) * | 2019-04-24 | 2019-08-02 | 南京中电熊猫平板显示科技有限公司 | A kind of transfer method of dot structure and micro- light emitting diode |
CN110112170B (en) * | 2019-05-17 | 2024-01-09 | 上海九山电子科技有限公司 | Microchip transferring equipment and transferring method |
CN110265425B (en) * | 2019-06-26 | 2021-10-08 | 京东方科技集团股份有限公司 | Transfer structure, preparation method thereof and transfer device |
CN110739260B (en) * | 2019-10-25 | 2023-08-11 | 京东方科技集团股份有限公司 | Transfer substrate and transfer method |
CN111162162B (en) * | 2020-01-03 | 2023-11-28 | 上海天马微电子有限公司 | Transfer substrate, preparation method thereof and transfer method of micro light emitting diode |
US11678582B2 (en) * | 2020-04-01 | 2023-06-13 | Nokia Technologies Oy | Electroactive material-controlled smart surface |
CN112968022B (en) * | 2020-05-28 | 2022-07-29 | 重庆康佳光电技术研究院有限公司 | LED display backboard and massive transfer method and repair method thereof |
CN112786520B (en) * | 2021-04-12 | 2021-07-20 | 武汉大学 | Transfer head, transfer head array and micro LED (light emitting diode) mass transfer method |
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US20210335634A1 (en) | 2021-10-28 |
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CN109273459B (en) | 2021-01-08 |
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