CN112786520B - Transfer head, transfer head array and micro LED (light emitting diode) mass transfer method - Google Patents
Transfer head, transfer head array and micro LED (light emitting diode) mass transfer method Download PDFInfo
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- CN112786520B CN112786520B CN202110386214.7A CN202110386214A CN112786520B CN 112786520 B CN112786520 B CN 112786520B CN 202110386214 A CN202110386214 A CN 202110386214A CN 112786520 B CN112786520 B CN 112786520B
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- 238000012546 transfer Methods 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 31
- 229920000431 shape-memory polymer Polymers 0.000 claims abstract description 101
- 239000000758 substrate Substances 0.000 claims abstract description 74
- 238000010023 transfer printing Methods 0.000 claims abstract description 43
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 238000001816 cooling Methods 0.000 claims abstract description 5
- 239000002861 polymer material Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
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- 230000008569 process Effects 0.000 description 12
- 238000013459 approach Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 238000003491 array Methods 0.000 description 3
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- 239000004814 polyurethane Substances 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
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- 230000005693 optoelectronics Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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Abstract
The invention discloses a transfer printing head, a transfer printing head array and a micro LED (light-emitting diode) mass transfer method, wherein the transfer printing head comprises a base body, a shape memory polymer containing cavity and a micro LED containing cavity, wherein the shape memory polymer containing cavity and the micro LED containing cavity are formed in the base body; firstly, controlling the shape memory polymer to be in a first form, aligning a transfer printing head array to a micro LED to be transferred, heating to enable the shape memory polymer to be in a second form, laterally expanding the shape memory polymer to extrude the micro LED, clamping the micro LED, then moving the micro LED to a target substrate, connecting the LED, cooling to enable the shape memory polymer to recover the first form, releasing the LED, and finishing one-time mass transfer. The invention has simple structure, no requirement on the micro LED, high transfer efficiency and low cost.
Description
Technical Field
The invention belongs to the field of micro-device manufacturing, relates to a micro-device transfer technology, and particularly relates to a transfer head, a transfer head array and a micro-LED (light-emitting diode) mass transfer method, which are used for conveying one or more micro-devices to a target substrate.
Background
Currently, the mainstream technologies in the Display market are Liquid Crystal Display (LCD) and Organic Light Emitting Diode (OLED). Micro LED (Micro-LED) display technology is a pixel unit using an LED chip of 1 to 100 micrometer (μm) unit as a display, and compared with LCD and OLED display technologies, the Micro LED display technology has the outstanding advantages of high quantum efficiency, high contrast, high viewing angle, high color gamut, extremely fast response time, easy transparent display, long service life, and the like, and will gradually become the mainstream technology of next-generation displays.
A key process in micro LED display technology is the precise and rapid transfer of a large number of micro LED chip elements to a display substrate, a process also known as bulk transfer. Since the micro LED size is as small as 1 μm to 100 μm, a conventional pick and place (pick & place) apparatus cannot be used, and a transfer technique for transferring with higher accuracy is required. With regard to this transfer technique, several configurations are disclosed as described below, but each of the disclosed techniques has several disadvantages.
The united states LuxVue corporation disclosed a method of transferring micro LEDs by electrostatic adsorption using an electrostatic head (chinese registered patent application No.: CN 201280067417.9). The disadvantages of this approach are: the flatness of the surface of the transfer object and the dielectric properties of the transfer object are required. Korean plementer discloses a method of vacuum adsorption and desorption of micro LEDs using porous materials to constitute adsorption surfaces (chinese registered patent application No.: CN 201910433371.1). The disadvantages of this approach are: local operation of individual LEDs is not possible. The company SelfArray, usa, discloses a method of automatically and uniformly distributing magnetically charged micro LEDs on a substrate by a periodic array of magnetic poles (US patent publication: US 2018/0261570 a 1). The disadvantages of this approach are: it is difficult to individually transfer different colored micro LEDs. China Hua Brilliant optoelectronic corporation disclosed that Micro LED transfer printing was achieved by placing a driving circuit board and Micro LEDs in a solution, and the Micro LED chips were fixedly mounted on the driving circuit board under the action of magnetic force (Chinese registered patent application No.: CN 201710561814.6). The disadvantages of this approach are: the Micro LED chip and the target substrate need to be pre-fabricated with magnetic properties, and the individual LEDs cannot be locally manipulated. China huaxing photoelectric corporation disclosed that micro LEDs were transferred by providing a heat-tack adhesive layer on an intermediate substrate and controlling the tackiness of the heat-tack adhesive layer by temperature (chinese registered patent application No. CN 201911250235.5). A disadvantage of this approach is that local operation of the individual LEDs is difficult. The beijing oriental company of china discloses a transfer head using an electrostriction device to perform electric-to-flex as a micro LED to realize transfer printing of the micro LED (chinese registered patent application No. CN 201910243046.9). The disadvantages of this approach are: the requirements on the shape of the micro LED are strict, the structure of the transfer printing head is complex, and the processing and repairing cost is high. The san an optoelectronic corporation, china, discloses a method of adhering micro LEDs using a photo-etching material and releasing the micro LEDs using a photo-etching process to achieve micro LED transfer printing (chinese registered patent application No.: CN 201711153705.7). The disadvantages of this approach are: the processes of gluing, heating, laser etching, removing glue and the like are needed for one-time transfer printing, and the process is complicated and slow.
The prior art as described above has requirements such as inability to operate on individual micro LEDs or prefabricated magnetic or special shape of micro LEDs, respectively.
[ patent document ]
(patent document 1) chinese registered patent application no: CN 201280067417.9;
(patent document 2) chinese registered patent application no: CN 201910433371.1;
(patent document 3) U.S. patent publication No.: US 2018/0261570 a 1;
(patent document 4) chinese registered patent application no: CN 201710561814.6;
(patent document 5) chinese registered patent application no: CN 201911250235.5;
(patent document 6) chinese registered patent application no: CN 201910243046.9;
(patent document 7) chinese registered patent application no: CN 201711153705.7.
Disclosure of Invention
The invention aims to provide a transfer head array based on shape memory polymer and a mass transfer method, which can transfer a plurality of micro LEDs at one time, have no special requirements on the surface material properties and electromagnetic characteristics of the micro LEDs, and have simple process and lower cost.
In order to solve the technical problems, the invention adopts the following technical scheme:
a shape memory polymer-based transfer head, characterized by: the shape memory polymer micro-LED comprises a micro-LED; the micro LED can smoothly enter or leave the micro LED accommodation by the first form, and the micro LED is clamped in the micro LED accommodation by the second form.
Further, the shape memory polymer material is a thermotropic bidirectional shape memory polymer material, such as polyester polyurethane.
Further, the shape memory polymer material is a rod.
Further, the shape memory polymer material is a hollow rod that facilitates deformation.
Further, the substrate is made of high-rigidity and high-strength materials, such as quartz glass and stainless steel.
The present invention also provides a transfer head array characterized in that: the transfer printing head is formed by connecting any one of the transfer printing heads on a transfer printing substrate in an array mode.
Further, the transfer substrate is made of a metal material having high thermal conductivity.
Furthermore, the transfer printing heads form an array in rows and columns to form a transfer printing head array, the shape memory polymers of the transfer printing heads in the same row or the same column are communicated, and the same shape memory polymer material is adopted.
Further, the shape memory polymer is a shape memory polyurethane.
Further, the transfer substrate has a temperature control function, which is implemented by heating or cooling the transfer substrate by an external heating/cooling device, or by incorporating a heater and a cooler in the transfer substrate.
Further, the transfer substrate is made of the same material as the base body, namely the transfer substrate and the base body are integrated.
Further, a heating device or a temperature control device is built in the transfer substrate.
The invention also provides a micro LED bulk transfer method, which adopts the transfer head array and is characterized by comprising the following steps:
step 1, selecting the size of a corresponding transfer head and the array density of the transfer head according to requirements;
step 2, controlling the temperature of the base body of the transfer printing head through the transfer printing substrate to enable the shape memory polymer material in the shape memory polymer containing cavity to be in a first shape;
step 3, moving the transfer printing substrate to the epitaxial substrate, and enabling each micro LED to enter a micro LED accommodating cavity of each transfer printing head;
step 4, controlling the temperature of the transfer printing substrate and further controlling the temperature of a base body of the transfer printing head to enable the shape memory polymer material in the shape memory polymer containing cavity to be in a second shape, and firmly clamping each micro LED in the corresponding micro LED containing cavity to clamp the micro LED;
and 5, moving the transfer printing substrate, moving the micro LEDs carried by each transfer printing head to a target substrate, aligning to corresponding electrodes of the target substrate, controlling the temperature of the transfer printing heads by controlling the temperature of the transfer printing substrate, so that the shape memory polymer material in the shape memory polymer accommodating cavity is recovered to the first shape, releasing the micro LEDs, and finishing mass transfer of the micro LEDs.
Further, in step 5, after the target substrate is aligned, the electrode connecting material between the electrode of the micro LED and the target substrate is processed, so that the electrode connecting material connects and fixes the electrode of the micro LED and the pre-fabricated circuit on the target substrate, and then the temperature of the matrix is controlled, so that the shape memory polymer material in the shape memory polymer accommodating cavity is in the first form to release the micro LED.
Further, the shape memory polymer of the present invention is not limited to a temperature-controlled shape memory polymer, but may be light-controlled, magnetic-controlled, or the like.
Has the advantages that:
the transfer head, the transfer head array and the bulk transfer method of the present invention have the following effects:
1. the transfer head array realizes batch clamping and releasing of the micro LEDs by means of the restorable deformation of the shape memory polymer.
2. The low modulus of the shape memory polymer allows the clamping of the micro-LEDs to be flexible without causing damage to the micro-LEDs.
3. A transfer head array has a certain capacity to accommodate variations in the shape and geometry of micro LEDs within a certain range, relying on the large elastic deformation of shape memory polymers.
4. Belongs to mechanical clamping, and has no special requirements on surface property, electromagnetic property and the like of a micro LED material.
5. After multiple micro LED transfers, the shape memory function of the shape memory polymer may fail. The structure of the transfer head array is easily replaced with a new shape memory polymer to restore a mass transfer function.
Drawings
Fig. 1 is a cross-sectional side view illustration of a transfer head and a transfer head array of embodiment 1 of the present invention.
Fig. 2 is an isometric view of a single transfer head of an array of transfer heads according to embodiment 1 of the present invention, where fig. 2 (a) is a schematic view of a single transfer head with a shape memory polymer in a first state, and fig. 2 (b) is a schematic view of a single transfer head with a shape memory polymer in a second state.
Fig. 3 is an isometric view of a single transfer head in embodiment 1 of the present invention; fig. 3 (a) is a schematic view showing that the shape memory polymer is in a first state, the micro LED enters the micro LED to be accommodated, and fig. 3 (b) is a schematic view showing that the shape memory polymer is in a second state, and the micro LED is pressed and clamped by the shape memory polymer.
Fig. 4 is an isometric view of a row-column array of transfer heads according to embodiment 2 of the present invention, wherein fig. 4 (a) is a schematic diagram of the array transfer heads with shape memory polymer in a first configuration, and fig. 4 (b) is a schematic diagram of the array transfer heads with shape memory polymer in a second configuration.
FIG. 5 is a schematic diagram of a transfer head array pick up micro LED process according to an embodiment of the present invention; fig. 5 (a) is a schematic diagram of alignment of the shape memory polymer in the first form micro LED receiving cavity and the micro LED on the epitaxial substrate, fig. 5 (b) is a schematic diagram of the shape memory polymer in the first form and the micro LED entering the micro LED receiving cavity, fig. 5 (c) is a schematic diagram of the shape memory polymer in the second form and the micro LED being clamped, fig. 5 (d) is a schematic diagram of the shape memory polymer in the second form and the micro LED being picked up by the transfer head array to be separated from the epitaxial substrate.
FIG. 6 is a schematic diagram of a transfer head array release micro LED process according to an embodiment of the present invention; fig. 6 (a) is a schematic diagram showing alignment between a transfer head array that has gripped a micro LED and a target substrate, fig. 6 (b) is a schematic diagram showing alignment between an electrode of the micro LED and the target substrate, fig. 6 (c) is a schematic diagram showing connection between the electrode of the micro LED and the target substrate, and fig. 6 (d) is a schematic diagram showing release of the micro LED by heating a shape memory polymer to a second state.
FIG. 7 is a flow chart of a one-time micro LED transfer process using a micro LED bulk transfer method according to an embodiment of the present invention.
Reference numerals:
100: a transfer head;
101: a substrate;
102: adhering the surfaces;
103: a shape memory polymer containment cavity;
104: a micro LED receiving cavity;
105: a shape memory polymer;
106: a first mode;
107: a second form;
108: a transfer substrate;
200: a micro LED;
300: an epitaxial substrate;
400: a target substrate;
401: an electrode connecting material.
Detailed Description
The following merely illustrates the principles of the invention. Therefore, although not explicitly described or shown in the present specification, those skilled in the art can implement the principle of the invention and invent various devices included in the concept and scope of the invention. Further, it is to be understood that all terms and embodiments of the appended claims are principally intended expressly to be only for understanding the concept of the invention, and are not to be construed as limiting the embodiments and aspects specifically enumerated herein.
The above objects, features and advantages will become more apparent from the following detailed description with reference to the accompanying drawings, and thus, it is possible for those skilled in the art to easily embody the technical idea of the invention.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Example 1: the embodiment of the invention provides a transfer printing head based on shape memory polymer, as shown in fig. 1, the transfer printing head comprises a base body 101, a shape memory polymer accommodating cavity 103 and a micro LED accommodating cavity 104, wherein the shape memory polymer accommodating cavity 103 and the micro LED accommodating cavity 104 are arranged on the base body 101, the base body is made of materials with higher hardness, such as silicon dioxide, and one side surface of the micro LED accommodating cavity 104 is an adhesion surface 102. A strip of shape memory polymer 105 is placed in the shape memory polymer receiving cavity 103 with one side thereof connected to the adhesive surface 102.
The shape memory polymer material is two-way memory shape memory polyurethane, and the material can be reversibly transformed between two shapes at 25 ℃ to 60 ℃ to form a shape memory polymer shape 1 at 25 ℃, as shown in fig. 2 (a). Shape memory polymer morphology 2 was formed at 60 ℃, as shown in fig. 2 (b).
The shape memory polymer 105 forms a first form 106 at 25 ℃, as shown in fig. 2 (a), the shape memory polymer 105 is a round rod. The micro LED accommodating chamber has enough space to accommodate the micro LED, as shown in fig. 3 (a).
The second shape 107 of the shape memory polymer 105 is formed at 60 ℃, the shape memory polymer 105 is changed into an oval bar, the long axis side of the oval extends to press the micro LED 200 in the micro LED accommodating cavity 104, and the micro LED 200 is clamped in the micro LED accommodating cavity 104, as shown in fig. 2 (b), so that the micro LED is clamped.
As shown in fig. 3, a schematic diagram of a single transfer head 100 gripping a micro LED 200 is shown, when the temperature is 25 ℃, the shape memory polymer 105 in the shape memory polymer accommodating cavity 103 is in the first state 106, and the micro LED accommodating cavity 104 has enough space to accommodate the micro LED 200, as shown in fig. 3 (a), at this time, the micro LED 200 is placed in the micro LED accommodating cavity 104.
When the temperature rises to 60 ℃, the shape memory polymer 105 is changed from the first shape 106 to the second shape 107, the shape memory polymer 105 presses the micro LED 200 to the edge of the micro LED accommodating cavity 104 and clamps the micro LED, as shown in fig. 3 (b), although the second shape 107 of the shape memory polymer 105 has pressing force on the micro LED 200, the shape memory polymer 105 has elasticity and does not damage the micro LED 200, the shape memory polymer 105 is arranged into a hollow bar, on one hand, the shape memory polymer is convenient to process, on the other hand, the shape memory polymer is convenient to deform, the solid bar is prevented from being difficult to deform, the pressing force on the micro LED 200 after deformation is too large, and the problem can be well solved by the hollow bar.
In embodiment 2, as shown in fig. 1, a plurality of transfer heads 100 are mounted in an array on a transfer substrate 108, and the transfer substrate 108 is made of a high thermal conductivity material such as copper.
The plurality of transfer heads 100 are distributed on the transfer substrate 108 in rows and columns, the shape memory polymers 105 of the transfer heads 100 in the same row or the same column are communicated, and the same shape memory polymer material is adopted, so that the manufacturing cost of the transfer head array can be greatly reduced and the process stability can be improved, and fig. 4 (a) shows the shape of the transfer head array when the shape memory polymer 105 is in the first shape 106. FIG. 4 (b) shows the configuration of the transfer head array when the shape memory polymer 105 is in the second configuration 107.
In actual production, the shape memory polymer may fail after a certain number of deformations, and needs to be replaced with a new shape memory polymer. In the array method in the embodiment of the invention, the shape memory polymers 105 in the same row or the same column are made of the same shape memory polymer material, so that new shape memory polymers can be quickly replaced, the replacement and maintenance cost is greatly reduced, in addition, the shape memory polymer materials are concentrated, the dispersion degree of the polymer materials is reduced, and the service life of the shape memory polymer materials is also greatly prolonged.
As a preferred embodiment, the transfer substrate is made of the same material as the base, i.e., the transfer substrate is integrated with the base.
The present invention also provides a method for transferring a bulk of micro LED 200, as shown in fig. 5 and 6, and fig. 5 and 6 provide a process for transferring a bulk of micro LED 200 by a transfer head array.
Step 1, selecting transfer head arrays with corresponding sizes and array densities according to micro LEDs 200 to be transferred, namely selecting transfer head arrays distributed at corresponding intervals according to the intervals of the micro LED 200 arrays on an epitaxial substrate 300;
step 2, controlling the temperature of the base 101 to be about 25 ℃ through the transfer substrate 108, so that the shape memory polymer material in the shape memory polymer accommodating cavity 103 is in the first form 106, and moving the transfer head array so that each micro LED accommodating cavity 104 corresponds to a micro LED 200 on the epitaxial substrate 300, respectively, as shown in fig. 5 (a).
Step 3, the transfer substrate 108 moves to the epitaxial substrate 300, so that the micro LED 200 enters the micro LED accommodating chamber 104, as shown in fig. 5 (b).
Step 4, the transfer substrate 108 is heated by an external heating device, and the temperature is transferred to the shape memory polymer 105, so that the temperature is raised to about 60 ℃. The shape memory polymer 105 changes from the first form 106 to the second form 107, and the micro LED 200 is held in the micro LED holding cavity 104, as shown in fig. 5 (c), so as to hold the micro LED. The transfer substrate 108 is lifted, and the micro LED 200 held in the micro LED holding cavity 104 moves away from the epitaxial substrate 300, as shown in fig. 5 (d).
Step 5, the transfer head array carries the clamped micro LED 200 to move to the target substrate 400, the micro LED 200 is aligned and placed, and a certain pressure is applied, so that each electrode of the micro LED 200 corresponds to and keeps in contact with each electrode connecting material 401 on the target substrate 400, as shown in fig. 6 (a) and 6 (b). The electrode connecting material 401 between the electrodes of the micro LED 200 and the target substrate 400 is processed such that the electrode connecting material 401 connects and fixes the electrodes of the micro LED 200 and the pre-fabricated circuit on the target substrate 400, as shown in fig. 6 (c). If the electrode connecting material 401 is a solder ball, heating is used. By lowering the temperature of the transfer substrate 108, the temperature of the shape memory polymer 105 is lowered to 25 ℃, the shape memory polymer 105 is restored from the second form 107 to the first form 106, and the clamping of the micro LED 200 is eliminated. The transfer substrate 108 is lifted up, releasing the micro LEDs 200, as shown in fig. 6 (d).
The above embodiments are merely illustrative of the present invention and are not to be construed as limiting the invention. Although the present invention has been described in detail with reference to the embodiments, it should be understood by those skilled in the art that various combinations, modifications or equivalents may be made to the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention, and the technical solution of the present invention is covered by the claims of the present invention.
Claims (7)
1. A transfer head array comprising a transfer substrate and a transfer head attached to the transfer substrate in an array, characterized in that: the transfer printing head comprises a base body, and a shape memory polymer containing cavity and a micro LED containing cavity which are arranged on the base body, wherein the shape memory polymer containing cavity is arranged on the side of the micro LED containing cavity, a shape memory polymer material is arranged in the shape memory polymer containing cavity, the shape memory polymer material has a first shape of lateral contraction and a second shape of lateral expansion, and a deformation space for the shape memory polymer material to expand is arranged in the micro LED containing cavity; the micro LED can smoothly enter or leave the micro LED accommodation by utilizing the first form, and the micro LED is clamped in the micro LED accommodation by utilizing the second form;
the transfer printing heads form a transfer printing head array by forming an array in rows and columns, the shape memory polymers of the transfer printing heads in the same row or the same column are communicated, and the same shape memory polymer material is adopted; the shape memory polymer material is a thermotropic bidirectional shape memory polymer material.
2. The transfer head array of claim 1, wherein: the substrate is made of quartz glass or stainless steel.
3. The transfer head array of claim 1, wherein: the transfer substrate is made of a metal material having high thermal conductivity.
4. The transfer head array of claim 1, wherein: the transfer substrate has a temperature control function, and is realized by heating or cooling the transfer substrate through an external heating/cooling device, or by providing a heater and a cooler in the transfer substrate.
5. The transfer head array of claim 1, wherein: the transfer printing substrate is made of the same material as the base body, namely the transfer printing substrate and the base body are integrated.
6. A micro LED bulk transfer method using the transfer head array according to claim 1, comprising the steps of:
step 1, selecting the size of a corresponding transfer head and the array density of the transfer head according to requirements;
step 2, controlling the temperature of the base body of the transfer printing head through the transfer printing substrate to enable the shape memory polymer material in the shape memory polymer containing cavity to be in a first shape;
step 3, moving the transfer printing substrate to the epitaxial substrate to enable each micro LED to enter a micro LED accommodating cavity of each transfer printing head;
step 4, controlling the temperature of the transfer printing substrate and further controlling the temperature of the transfer printing head to enable the shape memory polymer material in the shape memory polymer containing cavity to be in a second shape, and firmly clamping each micro LED in the corresponding micro LED containing cavity to clamp the micro LED;
and 5, moving the transfer printing substrate, moving the micro LEDs carried by each transfer printing head to a target substrate, aligning to corresponding electrodes of the target substrate, controlling the temperature of the transfer printing heads by controlling the temperature of the transfer printing substrate, so that the shape memory polymer material in the shape memory polymer accommodating cavity is recovered to the first shape, releasing the micro LEDs, and finishing mass transfer of the micro LEDs.
7. The micro LED macro transfer method of claim 6, wherein: and 5, after the target substrate is aligned, processing an electrode connecting material between the electrode of the micro LED and the target substrate, enabling the electrode connecting material to connect and fix the electrode of the micro LED and a prefabricated circuit on the target substrate, and then controlling the temperature of the matrix to enable the shape memory polymer material in the shape memory polymer containing cavity to be in the first shape to release the micro LED.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110386214.7A CN112786520B (en) | 2021-04-12 | 2021-04-12 | Transfer head, transfer head array and micro LED (light emitting diode) mass transfer method |
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| CN202110386214.7A CN112786520B (en) | 2021-04-12 | 2021-04-12 | Transfer head, transfer head array and micro LED (light emitting diode) mass transfer method |
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| CN112786520A CN112786520A (en) | 2021-05-11 |
| CN112786520B true CN112786520B (en) | 2021-07-20 |
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| CN108346606B (en) * | 2018-02-09 | 2020-12-15 | 京东方科技集团股份有限公司 | Microchip transfer device and microchip transfer system |
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| US11246251B2 (en) * | 2019-05-02 | 2022-02-08 | Seagate Technology Llc | Micro-component transfer systems, methods, and devices |
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