US11108023B2 - Organic light emitting diode display device - Google Patents

Organic light emitting diode display device Download PDF

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US11108023B2
US11108023B2 US16/455,363 US201916455363A US11108023B2 US 11108023 B2 US11108023 B2 US 11108023B2 US 201916455363 A US201916455363 A US 201916455363A US 11108023 B2 US11108023 B2 US 11108023B2
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layer
electrode
emitting material
material layer
light emitting
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US20200006709A1 (en
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Dong-Min SIM
Ji-Hyang JANG
Jin-Tae Kim
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LG Display Co Ltd
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LG Display Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H01L51/5275—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H01L27/3225—
    • H01L51/5253—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair

Definitions

  • the present invention relates to an organic light emitting diode display device, and more particularly, to an organic light emitting diode display device where a light extraction efficiency is improved.
  • an organic light emitting diode (OLED) display device is an emissive type device and does not require a backlight unit used in a non-emissive type device such as a liquid crystal display (LCD) device.
  • the OLED display device has a light weight and a thin profile.
  • the OLED display device has advantages of a viewing angle, a contrast ratio, and power consumption as compared with the LCD device. Furthermore, the OLED display device can be driven with a low direct current (DC) voltage and has rapid response speed. Moreover, since inner elements of the OLED display device have a solid phase, the OLED display device has high durability against an external impact and has a wide available temperature range.
  • DC direct current
  • the OLED display device while light emitted from a light emitting layer passes through various components and is emitted to an exterior, a large amount of the light is lost. As a result, the light emitted to the exterior of the OLED display device is only 20% of the light emitted from the light emitting layer.
  • the amount of the light emitted from the light emitting layer is increased along with the amount of a current applied to the OLED display device, it is possible to further increase luminance of the OLED display device by applying more currents to the light emitting layer. However, in this case, power consumption is increased, and lifetime of the OLED display device is also reduced.
  • an OLED display device where a microlens array (MLA) is attached to an outer surface of a substrate or a microlens is formed in an overcoating layer has been suggested.
  • MLA microlens array
  • the microlens array is attached to the outer surface of the substrate or the microlens is formed in the overcoating layer, a visibility of a black color is deteriorated due to a relatively high reflectance.
  • the present invention is directed to an organic light emitting diode display device that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
  • An object of the present invention is to provide an organic light emitting diode display device where a light extraction efficiency is improved and a visibility of a black color is improved by reducing a reflectance.
  • an organic light emitting diode display device includes a substrate; an overcoating layer on the substrate and including a plurality of convex portions and a plurality of concave portions; a first electrode on the overcoating layer; a light emitting layer on the first electrode and including a first emitting material layer; and a second electrode on the light emitting layer, wherein the first emitting material layer in the plurality of convex portions is separated from the second electrode by a first distance, and wherein the first emitting material layer in the plurality of concave portions is separated from the second electrode by a second distance different from the first distance.
  • FIG. 1 is a cross-sectional view showing an organic light emitting diode display device according to an embodiment of the present disclosure
  • FIG. 2 is a magnified view of A of FIG. 1 ;
  • FIG. 3 is a cross-sectional view showing a light emitting diode of an organic light emitting diode display device according to an embodiment of the present disclosure
  • FIGS. 4A, 4B and 4C are graphs showing an intensity of a light according to a position of first, second and third emitting material layers, respectively, of an organic light emitting diode display device according to an embodiment of the present disclosure
  • FIGS. 5A and 5B are graphs showing an intensity of a light according to a wavelength of a light extracted from an organic light emitting diode display device having a microlens and an organic light emitting diode display device according to an embodiment of the present disclosure, respectively;
  • FIG. 6 is a graph showing a reflectance of a microlens with respect to an aspect ratio of a microlens of an organic light emitting diode display device according to an embodiment of the present disclosure.
  • FIGS. 7A, 7B and 7C are graphs showing an emission efficiency according to a voltage of red, green and blue sub-pixels, respectively, of an organic light emitting diode display device according to an embodiment of the present disclosure.
  • FIG. 1 is a cross-sectional view showing an organic light emitting diode display device according to an embodiment of the present disclosure. All the components of the organic light emitting diode display devices according to all embodiments of the present disclosure are operatively coupled and configured.
  • an organic light emitting diode (OLED) display device 100 can have a top emission type or a bottom emission type according to an emission direction of a light.
  • a bottom emission type OLED display device can be exemplarily illustrated hereinafter.
  • the OLED display device 100 includes a substrate having a driving thin film transistor (TFT) DTr and a light emitting diode E thereon and a protecting film 102 encapsulating the substrate 101 .
  • TFT driving thin film transistor
  • the substrate 101 includes a plurality of pixel regions P and each pixel region P includes an emitting area EA where the light emitting diode E is disposed and an image is substantially displayed and a non-emitting area NEA along an edge of the emitting area EA.
  • the non-emitting area NEA includes a switching area TrA where the driving TFT DTr is disposed.
  • a semiconductor layer 103 is disposed in the switching area TrA of the non-emitting area NEA of the pixel region P on the substrate 101 .
  • the semiconductor layer 103 can include silicon and can have an active region 103 a in a central portion and source and drain regions 103 b and 103 c in both side portions of the active region 103 a .
  • the active region 103 a can function as a channel of the driving TFT DTr, and the source and drain regions 103 b and 103 c can be doped with impurities of a relatively high concentration.
  • a gate insulating layer 105 is disposed on the semiconductor layer 103 .
  • a gate electrode 107 and a gate line are disposed on the gate insulating layer 105 .
  • the gate electrode 107 corresponds to the active region 103 a of the semiconductor layer 103 , and the gate line is connected to the gate electrode 107 to extend along one direction.
  • a first interlayer insulating layer 109 a is disposed on the gate electrode 107 and the gate line.
  • the first insulating layer 109 a and the gate insulating layer 105 has first and second semiconductor contact holes 116 exposing the source and drain regions 103 b and 103 c in both side portions of the active region 103 a.
  • Source and drain electrodes 110 a and 110 b spaced apart from each other are disposed on the first interlayer insulating layer 109 a having the first and second semiconductor contact holes 116 .
  • the source electrode 110 a is connected to the source region 103 b through the first semiconductor contact hole 116
  • the drain electrode 110 b is connected to the drain region 103 c through the second semiconductor contact hole 116 .
  • a second interlayer insulating layer 109 b is disposed on the source and drain electrodes 110 a and 110 b and the first interlayer insulating layer 109 a exposed between the source and drain electrodes 110 a and 110 b.
  • the source and drain electrodes 110 a and 110 b , the semiconductor layer 103 including the source and drain regions 103 b and 103 c contacting the source and drain electrodes 110 a and 110 b , respectively, the gate insulating layer 105 and the gate electrode 107 constitute the driving TFT DTr.
  • a data line can be disposed on the second interlayer insulating layer 109 b .
  • the data line can cross the gate line to define each pixel region P.
  • a switching TFT having the same structure as the driving TFT DTr can be connected to the driving TFT DTr.
  • the switching TFT and the driving TFT DTr can exemplarily have a top gate type where the semiconductor layer 103 includes polycrystalline silicon or an oxide semiconductor material.
  • the switching TFT and the driving TFT DTr can have a bottom gate type where the semiconductor layer 103 includes intrinsic amorphous silicon and impurity-doped amorphous silicon in another embodiment.
  • the substrate 101 can include a glass or a flexible transparent plastic such as polyimide.
  • polyimide tolerant of a deposition step of a relatively high temperature due to an excellent thermal resistance can be used for the substrate 101 .
  • a whole front surface of the substrate of polyimide can be covered with at least one buffer layer.
  • a threshold voltage of the driving TFT DTr in the switching area TrA can be shifted by a light.
  • the OLED display device 100 can further include a light shielding layer under the semiconductor layer 103 .
  • the light shielding layer can be disposed between the substrate 101 and the semiconductor layer 103 to block a light incident to the semiconductor layer 103 through the substrate 101 . As a result, the threshold voltage shift by the external light is minimized or prevented.
  • the light shielding layer can be covered with the at least one buffer layer.
  • a wavelength converting layer 106 is disposed on the second interlayer insulating layer 109 b corresponding to the emitting area EA of each pixel region P.
  • the wavelength converting layer 106 can include a color filter transmitting only a light having a wavelength of a predetermined color corresponding to each pixel region P among a white light emitted from the light emitting diode E to the substrate 101 .
  • the wavelength converting layer 106 can transmit only a light having a wavelength corresponding to a red color, a green color or a blue color.
  • a single unit pixel region can include red, green and blue pixel regions P, and the wavelength converting layer 106 in the red, green and blue pixel regions P can include red, green and blue color filters, respectively.
  • the single unit pixel region can further include a white pixel region where the wavelength converting layer 106 is not disposed.
  • the wavelength converting layer 106 can include a quantum dot which have a size capable of emitting a light of a predetermined color corresponding to each pixel region P according to a white light emitted from the light emitting diode E to the substrate 101 .
  • the quantum dot can include at least one selected from a group including CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, GaN, GaP, GaAs,
  • the wavelength converting layer 106 in the red pixel region can include a quantum dot of CdSe or InP
  • the wavelength converting layer 106 in the green pixel region can include a quantum dot of CdZnSeS
  • the wavelength converting layer 106 in the blue pixel region can include a quantum dot of ZnSe.
  • the OLED display device 100 where the wavelength converting layer 106 includes a quantum dot can have a relatively high color reproducibility.
  • the wavelength converting layer ( 106 ) can include a color filter containing a quantum dot.
  • An overcoat layer 108 which has a first drain contact hole 108 a exposing the drain electrode 110 b with the second interlayer insulating layer 109 b is disposed on the wavelength converting layer 106 .
  • the overcoating layer 108 has a plurality of concave portions 118 and a plurality of convex portions 117 on a top surface thereof.
  • the plurality of concave portions 118 and the plurality of convex portions 117 are alternately disposed with each other to constitute a microlens ML.
  • the overcoating layer 108 can include an insulating material having a refractive index of 1.5.
  • the overcoating layer 108 can include one of acrylic resin, epoxy resin, phenol resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene resin, polyphenylenesulfide resin, benzocyclobutene and photoresist.
  • the plurality of convex portions 117 can have a structure to define or surround the plurality of concave portions 118 , respectively, and can have a bottom surface portion 117 a , a top surface portion 117 b and a side surface portion 117 c .
  • the side surface portion 117 c can be a whole of a slanted surface constituting the top surface portion 117 b .
  • a slope of the side surface portion 117 c can increase from the bottom surface portion 117 a to the top surface portion 117 b such that the side surface portion 117 c can have a maximum slope Smax at a portion adjacent to the top surface portion 117 b.
  • the light extraction efficiency of the OLED display device 100 increases.
  • a first electrode 111 connected to the drain electrode 110 b of the driving TFT DTr is disposed on the overcoating layer 108 constituting the microlens ML.
  • the first electrode 111 can be an anode of the light emitting diode E and can include a material having a relatively high work function.
  • the first electrode 111 is disposed in each pixel region P, and a bank 119 is disposed between the first electrodes 111 in the adjacent pixel regions P.
  • the first electrode 111 is separated in each pixel region P with the bank 119 as a border between the adjacent pixel regions P.
  • the bank 119 includes an opening exposing the first electrode 111 , and the opening of the bank 119 is disposed to corresponds to the emitting area EA.
  • the plurality of convex portions 117 and the plurality of concave portions 118 constituting the microlens ML are disposed in a whole of the opening of the bank 119 .
  • the plurality of convex portions 117 and the plurality of concave portions 118 can contact an edge portion of the bank 119 .
  • the opening of the bank 119 is disposed to correspond to the wavelength converting layer 106 .
  • the edge portion of the bank 119 can overlap an edge portion of the wavelength converting layer 106 . Since the wavelength converting layer 106 overlaps the bank 119 , a leakage of a light not passing through the wavelength converting layer 106 is prevented.
  • a light emitting layer 113 is disposed on the first electrode 111 .
  • the light emitting layer 113 can have a single layer of an emitting material.
  • the light emitting layer 113 can have a multiple layer including a hole injecting layer, a hole transporting layer, an emitting material layer, an electron transporting layer and an electron injecting layer for increasing an emission efficiency.
  • the first electrode 111 and the light emitting layer 113 sequentially on the overcoating layer 108 can have a shape according to a morphology of the plurality of convex portions 117 and the plurality of concave portions 118 of the top surface of the overcoating layer 108 to constitute the microlens ML.
  • the light emitting layer 113 can have different thicknesses in the convex portion 117 and the concave portion 118 of the microlens ML.
  • the thickness of the light emitting layer 113 in a region corresponding to the side surface portion 117 c of the convex portion 117 of the microlens ML can be smaller than the thickness of the light emitting layer 113 in a region corresponding to the concave portion 118 of the microlens ML.
  • the thickness of the light emitting layer 113 can be defined as a length perpendicular to a tangential line C 1 and C 2 (of FIG. 2 ) of the top and bottom surfaces of the light emitting layer 113 .
  • a distance from the second electrode 115 to the emitting material layers 203 a , 203 b and 203 c (of FIG. 3 ) of the light emitting layer 113 in the concave portion 118 of the microlens ML is different from a distance from the second electrode 115 to the emitting material layers 203 a , 203 b and 203 c of the light emitting layer 113 in the side surface portion 117 c of the convex portion 117 of the microlens ML.
  • the emitting material layers 203 a , 203 b and 203 c are disposed in the light emitting layer 113 constituting the microlens ML.
  • the emitting material layers 203 a , 203 b and 203 c are disposed at specific positions in the light emitting layer 113 constituting the microlens ML, the light extraction efficiency of the light emitted from the light emitting diode E increases and the visibility of the black color is improved.
  • a second electrode 115 is disposed on a whole of the light emitting layer 113 .
  • the second electrode 115 can be a cathode.
  • the second electrode 115 can have a shape according to a morphology of the plurality of convex portions 117 and the plurality of concave portions 118 of the top surface of the overcoating layer 108 to constitute the microlens ML.
  • the light of the light emitting layer 113 can pass through the transparent first electrode 111 to be emitted toward an exterior such that an image is displayed.
  • the overcoating layer 108 constitutes the microlens ML
  • the light confined in the interior of the light emitting layer 113 due to a total reflection can be transmitted with an angle smaller than a critical angle of the total reflection by the microlens ML of the overcoating layer 108 to be extracted to the exterior by a multiple reflection.
  • the light extraction efficiency of the OLED lighting apparatus 100 is improved.
  • the microlens ML of the overcoating layer 108 , the first electrode 111 , the light emitting layer 113 and the second electrode 115 is disposed in a whole of the opening of the bank 119 corresponding to the emitting area EA, the whole of the emitting area EA is used for the microlens ML and the light extraction efficiency is maximized.
  • a protecting film 102 of a thin film type is disposed on the driving TFT DTr and the light emitting diode E second electrode 115 , and a face seal 104 is disposed between the light emitting diode E and the protecting film 102 .
  • the face seal 104 can include an organic material or an inorganic material which is transparent and has an adhesive property.
  • the protecting film 102 and the substrate 101 can be attached to each other to encapsulate the OLED display device 100 .
  • the protecting film 102 can include at least two inorganic protecting films.
  • An organic protecting film for supplementing impact resistance of the at least two inorganic protecting films can be interposed between the at least two inorganic protecting films.
  • the inorganic protecting film can completely wrap the organic protecting film such that penetration of the moisture and the oxygen through a side surface of the organic protecting film is prevented.
  • a polarizing plate for preventing reduction of a contrast ratio due to an external light can be disposed on an outer surface of the transparent substrate 101 . Since the polarizing plate is disposed on a surface of the OLED display device 100 in a driving mode where a light from the light emitting layer 113 is emitted, the contrast ratio increases.
  • the emitting material layers 203 a , 203 b and 203 c are disposed at specific positions in the light emitting layer 113 constituting the microlens ML due to the overcoating layer 108 , the light extraction efficiency of the light emitted from the light emitting diode E increases and the visibility of the black color is improved.
  • FIG. 2 is a magnified view of A of FIG. 1 .
  • the first electrode 111 , the light emitting layer 113 and the second electrode 115 are sequentially disposed on the overcoating layer 108 having the microlens ML of the plurality of concave portions 118 and the plurality of convex portions 117 alternating with each other.
  • the first electrode 111 , the light emitting layer 113 and the second electrode 115 constitute the light emitting diode E.
  • the first electrode 111 , the light emitting layer 113 and the second electrode 115 have a shape according to a morphology of the top surface of the overcoating layer 108 to constitute the microlens ML.
  • Each convex portion 117 can have a bottom surface portion 117 a , a top surface portion 117 b and a side surface portion 117 c .
  • the side surface portion 117 c can be a whole of a slanted surface constituting the top surface portion 117 c.
  • the side surface portion 117 c can be divided into a lower region LA, a middle region MA and an upper region UA according to a total height H between the bottom surface portion 117 a and the top surface portion 117 b .
  • the lower region LA can be defined as a region from the bottom surface portion 117 a to a half of the total height H (H/2).
  • the middle region MA between the lower region LA and the upper region UA. can be defined as a region from the half of the total height H (H/2) to four fifth of the total height H (4H/5).
  • the upper region UA can be defined as a region from the four fifth of the total height H (4H/5) to the top surface portion 117 b.
  • the convex portion 117 of the overcoating layer 108 can have a structure where the top surface portion 117 b has a sharp shape.
  • the convex portion 117 can have a cross-section of triangle shape including a vertex corresponding to the top surface portion 117 b , a bottom side corresponding to the bottom surface portion 117 a and a hypotenuse corresponding to the side surface portion 117 c.
  • An angle ⁇ 1 and ⁇ 2 of the side surface portion 117 c of the convex portion 117 of the overcoating layer 108 can gradually increase from the bottom surface portion 117 a to the top surface portion 117 b .
  • the angle ⁇ 1 and ⁇ 2 is defined as an angle between the tangential line C 1 and C 2 of the side surface portion 117 c and a horizontal surface (i.e., the bottom surface portion 117 a ).
  • the side surface portion 117 c can have the maximum slope Smax when the angle ⁇ 1 and ⁇ 2 becomes the maximum value.
  • the slope can be defined by a tangent value of the angle (tan 0).
  • the side surface portion 117 c of the convex portion 117 of the overcoating layer 108 has the maximum slope Smax in the upper region UA adjacent to the top surface portion 117 b.
  • the first electrode 111 , the light emitting layer 113 and the second electrode 115 on the overcoating layer 108 having the microlens ML of the concave portion 118 and the convex portion 117 have the microlens ML on the top surface thereof.
  • the convex portion 117 can include the bottom surface portion 117 a , the tope surface portion 117 b and the side surface portion 117 c , and the side surface portion 117 c can include the upper region UA, the middle region MA and the lower region LA.
  • the light emitting layer 113 can have different thicknesses d 1 , d 2 , d 3 and d 4 in different regions.
  • the light emitting layer 113 can be formed to have the different thicknesses d 1 , d 2 , d 3 and d 4 corresponding to the concave portion 118 and the convex portion 117 of the microlens ML.
  • the thickness of the light emitting layer 113 can be defined as a length perpendicular to the tangential line C 1 and C 2 of the light emitting layer 113 .
  • the third and fourth thicknesses d 3 and d 4 of the light emitting layer 113 of the side surface portion 117 c of the convex portion 117 of the microlens ML can be smaller than the first and second thicknesses d 1 and d 2 of the light emitting layer 113 of the concave portion 118 and the top surface portion 117 b of the convex portion 117 .
  • the thickness d 3 and d 4 of the light emitting layer 113 of the side surface portion 117 c of the convex portion 117 can gradually decrease from the lower region LA to the upper region UA.
  • the side surface portion 117 c of the convex portion 117 of the overcoating layer 108 can have the angle ⁇ 1 and ⁇ 2 gradually increasing from the bottom surface 117 a to the top surface portion 117 b .
  • the third and fourth thicknesses d 3 and d 4 of the light emitting layer 113 of the side surface portion 117 c are smaller than the first and second thicknesses d 1 and d 2 of the light emitting layer 113 of the concave portion 118 and the top surface portion 117 b.
  • the light emitting layer 113 of the side surface portion 117 c can have the fourth thickness d 4 as the minimum value in the upper region UA where the angle ⁇ 2 has a relatively great value and can have the third thickness d 3 as the maximum value in the middle region MA where the angle ⁇ 1 has a relatively small value.
  • the first thickness d 1 can be equal to or greater than the second thickness d 2
  • the second thickness d 2 can be greater than the third thickness d 3
  • the third thickness d 3 can be greater than the fourth thickness d 4 , e.g., d 1 ⁇ d 2 >d 3 >d 4 .
  • the light emission occurs in a region having a relatively high current density. Since the light emitting layer 113 has a relatively small thickness d 4 in the upper region UA of the convex portion 117 , the light emitting layer 113 can have a relatively high current density and a relatively strong light emission in the upper region UA of the convex portion 117 . In addition, since the light emitting layer 1113 has a relatively great thickness d 1 in the lower region LA of the convex portion 117 , the light emitting layer 113 can have a relatively low current density and a relatively weak light emission in the lower region LA of the convex portion 117 .
  • the upper region UA of each of the plurality of convex portions 117 where the strong light emission occurs can be defined as an effective emission region B.
  • an electric field is locally concentrated on the effective emission region B.
  • a main current path is constituted and a main emission occurs in the effective emission region B.
  • the light emitting layer 113 has the main emission in the effective emission region B having a relatively small thickness d 4 as compared with the top surface portion 117 b of the convex portion 117 and the concave portion 118 . Since the emitting material layers 203 a , 203 b and 203 c are disposed at specific positions in the light emitting layer 113 based on the thickness of the light emitting layer 113 in the effective emission region B, the light extraction efficiency of the light emitted from the light emitting diode E increases and the visibility of the black color is improved.
  • the light emitting layer 113 constituting the microlens ML is formed to satisfy following equations based on the effective emission region B so that the light extraction efficiency can increase and the visibility of the black color can be improved.
  • T 2 T 1*cos ⁇ [Equation 1]
  • T 1 is the first thickness d 1 of the light emitting layer 113 in the concave portion 118
  • T 2 is the fourth thickness d 4 of the light emitting layer 113 in the effective emission region B of the side surface portion 117 c of the convex portion 117
  • ⁇ is the second angle ⁇ 2 of the second tangential line C 2 of the side surface portion 117 c of the convex portion 117 in the effective emission region B with respect to the horizontal surface (i.e., the bottom surface portion 117 a ).
  • the side surface portion 117 c has the maximum slope Smax
  • T 2 can be determined as the fourth thickness d 4 of the light emitting layer 113 .
  • the maximum angle ⁇ max of the tangential line C 2 of the side surface portion 117 c in the effective emission region B with respect to the horizontal surface can be 20 degree to 60 degree.
  • the maximum angle ⁇ max is smaller than 20 degree, the transmission angle of the light in the light emitting layer 113 having the microlens ML is not greatly changed as compared with the transmission angle of the light in a flat light emitting layer. As a result, the light extraction efficiency is insufficiently improved.
  • the transmission angle of the light in the light emitting layer 113 becomes greater than the critical angle of the total reflection at an interface of the substrate 101 (of FIG. 1 ) and an external air layer.
  • the amount of the light confined in the OLED display device 100 increases and the light extraction efficiency of the light emitting layer 113 having the microlens ML decreases as compared with the light extraction efficiency of a flat light emitting layer.
  • the maximum angle ⁇ max of the side surface portion 117 c can be determined within a range of 20 degree to 60 degree in the effective emission region B of the convex portion 117 of the overcoating layer 108 .
  • a distance from the second electrode 115 of the light emitting layer 113 to the emitting material layers 203 a , 203 b and 203 c can be defined according to a following Equation 2.
  • L D *cos ⁇ [Equation 2]
  • D is a distance from the second electrode 115 to the emitting material layers 203 a , 203 b and 203 c of the light emitting layer 113 in the concave portion 118 .
  • L is a distance from the second electrode 115 to the emitting material layers 203 a , 203 b and 203 c of the light emitting layer 113 in the side surface portion 117 c of the convex portion 117 where the main emission occurs.
  • cos ⁇ is a parameter to compensate a reduced thickness of the light emitting layer 113 in the effective emission region B due to the second angle ⁇ constituting the slope.
  • the distance from the second electrode 115 to the emitting material layers 203 a , 203 b and 203 c of the light emitting layer 113 in the concave portion 118 is different from the distance from the second electrode 115 to the emitting material layers 203 a , 203 b and 203 c of the light emitting layer 113 in the side surface portion 117 c of the convex portion 117 .
  • the side surface portion 117 c of the convex portion 117 constituting the microlens ML is defined as the effective emission region B of the light emitting layer 113 .
  • the emitting material layers 203 a , 203 b and 203 c are disposed at specific positions in the light emitting layer 113 based on the shape of the convex portion 117 according to the Equations 1 and 2. Since the emitting material layers 203 a , 203 b and 203 c are disposed at specific positions in the light emitting layer 113 based on the effective emission region B of the side surface portion 117 c of the convex portion 117 , the light extraction efficiency further increases.
  • Y is a target thickness of the emitting material layers 203 a , 203 b and 203 c of the light emitting layer 113 for evaporation.
  • Y can be a distance from the second electrode 115 to the emitting material layers 203 a , 203 b and 203 c of the light emitting layer 113 in the concave portion 118 .
  • L is defined by D*cos ⁇ according to the Equation 2.
  • the distance from the second electrode 115 to the emitting material layers 203 a , 203 b and 203 c of the light emitting layer 113 in the side surface portion 117 c of the convex portion 117 corresponding to the effective emission region B is equal to or smaller than the distance from the second electrode 115 to the emitting material layers 203 a , 203 b and 203 c of the light emitting layer 113 in the concave portion 118 .
  • the thickness of the light emitting layer 113 in the effective emission region B on the overcoating layer 108 can be determined within a range of 3000 ⁇ to 3500 ⁇ .
  • the thickness of the light emitting layer 113 obtained by using the Equations 2 and 3 can be determined such that the OLED display device 100 has a micro cavity effect.
  • the micro cavity effect is a phenomenon such that a light of a wavelength is strengthened by a constructive interference and a light of the other wavelengths is weakened by a destructive interference when a light reflects between mirrors. As a result, an intensity of a light of a predetermined wavelength can increase by the micro cavity effect.
  • the distance of the emitting material layers 203 a , 203 b and 203 c of the light emitting layer 113 of the microlens ML in the effective emission region B can be determined such that the light emitting layer 113 has the micro cavity effect.
  • the distance L from the second electrode 115 to the emitting material layers 203 a , 203 b and 203 c of the light emitting layer 113 in the side surface portion 117 c of the convex portion 117 corresponding to the effective emission region B can be determined such that the emitting material layers 203 a , 203 b and 203 c of the light emitting layer 113 has the micro cavity effect
  • the distance Y from the second electrode 115 to the emitting material layers 203 a , 203 b and 203 c of the light emitting layer 113 in the concave portion 118 can be determined according to the Equation 3.
  • the light extraction efficiency of the light emitted from the light emitting diode E can increase, and deterioration of the visibility of a black color due to a relatively high reflectance can be prevented.
  • FIG. 3 is a cross-sectional view showing a light emitting diode of an organic light emitting diode display device according to an embodiment of the present disclosure.
  • the light emitting diode E includes the first and second electrodes 111 and 115 and the light emitting layer 113 between the first and second electrodes 111 and 115 , and the light emitting layer 113 includes first, second and third emitting material layers (EMLs) 203 a , 203 b and 203 c.
  • EMLs emitting material layers
  • the first electrode 111 can be an anode supplying a hole and having a relatively great work function.
  • the first electrode 111 can include one of a metal oxide such as indium tin oxide (ITO) and indium zinc oxide (IZO), a mixture of a metal and an oxide such as zinc oxide and aluminum (ZnO:Al) and tin oxide and antimony (SnO2:Sb) and a conductive polymer such as poly(3-methylthiophene), poly [3,4-(ethylene-1,2-dioxy)thiophene] (PEDT), polypyrrole and polyaniline.
  • the first electrode 111 can include one of carbon nano tube (CNT), graphene and silver nano wire.
  • the second electrode 115 can be a cathode supplying an electron and having a relatively small work function.
  • the second electrode 115 can have a single layer of an alloy of a first metal (e.g., Ag) having a relatively small work function and a second metal (e.g., Mg), a double layer of the first and second metals, or a multiple layer of the alloy of the first and second metals.
  • a first metal e.g., Ag
  • Mg second metal
  • the second electrode 115 can be a reflective electrode and the first electrode 111 can be a transflective electrode.
  • the first electrode 111 can be a reflective electrode and the second electrode 115 can be a transparent electrode.
  • at least one of the first and second electrodes 111 and 115 can be a reflective electrode.
  • the second electrode 115 can include a material having a reflectance equal to or greater than 90% in a visible ray band
  • the first electrode 111 can include a material having a transmittance equal to or greater than 80% in the visible ray band.
  • the visible ray band can be a wavelength band of 380 nm to 800 nm.
  • the second electrode 115 When the second electrode 115 has a reflectance equal to or greater than 90%, most of a light from the light emitting layer 113 to the second electrode 115 can be reflected by the second electrode 115 to proceed toward the first electrode 111 . In addition, when the first electrode 111 has a transmittance equal to or greater than 80%, a large amount of the light can pass through the first electrode 111 .
  • the second electrode 115 can have a thickness of 90 nm to 120 nm for increasing a reflectance in the visible ray band. However, a thickness of the second electrode 115 is not limited thereto and can vary according to a material of the second electrode 115 .
  • the first electrode 111 can have a thickness of 115 nm to 135 nm for increasing a transmittance in the visible ray band. However, a thickness of the first electrode 111 is not limited thereto and can vary according to a material of the first electrode 111 .
  • a first electron transporting layer (ETL) 205 is disposed between the second electrode and the first emitting material layer 203 a
  • a first auxiliary layer 208 is disposed between the first emitting material layer 203 a and the second emitting material layer 203 b
  • a second auxiliary layer 209 is disposed between the second emitting material layer 203 b and the third emitting material layer 203 c
  • a first hole transporting layer (HTL) 207 is disposed between the third emitting material layer 203 c and the first electrode 111 .
  • An electron injecting layer can be disposed between the second electrode 115 and the first electron transporting layer 205 .
  • the electron injecting layer can assist injection of the electron from the second electrode 115 to the first electron transporting layer 205 .
  • the first electron transporting layer 205 can have at least two layers or can include at least two materials.
  • a hole blocking layer (HBL) can be disposed between the first electron transporting layer 205 and the first emitting material layer 203 a . Since the hole blocking layer prevents transmission of a hole injected into the first emitting material layer 203 a to the first electron transporting layer 205 , combination of a hole and an electron is improved in the first emitting material layer 203 a and an emission efficiency of the first emitting material layer 203 a is improved.
  • HBL hole blocking layer
  • the first electron transporting layer 205 and the hole blocking layer can be formed as a single layer.
  • the electron injecting layer, the first electron transporting layer 205 and the hole blocking layer can be referred to as an electron transmitting layer.
  • An electron is supplied from the second electrode 115 to the first emitting material layer 203 a through the first electron transporting layer 205 , and a hole is supplied from the first auxiliary layer 208 to the first emitting material layer 203 a .
  • the electron supplied through the first electron transporting layer 205 and the hole supplied from the first auxiliary layer 208 are recombined in the first emitting material 203 a to generate a light.
  • the first emitting material layer 203 a can emit a light of a first color.
  • the first emitting material layer 203 a can include one of a blue emitting layer, a deep blue emitting layer and a sky blue emitting layer.
  • the light emitted from the first emitting material layer 203 a can have a wavelength of 440 nm to 480 nm.
  • the first emitting material layer 203 a can include at least one host and at least one dopant or a mixed host where at least two hosts are mixed and at least one dopant.
  • the mixed host includes a host having a hole transporting property and a host having an electron transporting property, a charge balance of the first emitting material layer 203 a can be adjusted and an efficiency of the first emitting material layer 203 a can be improved.
  • the dopant can include a fluorescent dopant or a phosphorescent dopant.
  • the first auxiliary layer 208 can include a second hole transporting layer adjacent to the first emitting material layer 203 a and a second electron transporting layer adjacent to the second emitting material layer 203 b.
  • a hole injecting layer can be disposed between the second hole transporting layer and the second emitting material layer 203 b , and an electron injecting layer can be disposed between the second electron transporting layer and the first emitting material layer 203 a.
  • An electron blocking layer can be disposed between the first emitting material layer 203 a and the second hole transporting layer. Since the electron blocking layer prevents transmission of an electron injected into the first emitting material layer 203 a to the second hole transporting layer, combination of a hole and an electron is improved in the first emitting material layer 203 a and an emission efficiency of the first emitting material layer 203 a is improved.
  • a hole blocking layer can be disposed between the second electron transporting layer and the second emitting material layer 203 b . Since the hole blocking layer prevents transmission of a hole injected into the second emitting material layer 203 b to the second electron transporting layer, combination of a hole and an electron is improved in the second emitting material layer 203 b and an emission efficiency of the second emitting material layer 203 b is improved.
  • the electron blocking layer and the second hole transporting layer can be formed as a single layer, and the second electron transporting layer and the hole blocking layer can be formed as a single layer.
  • the hole injecting layer, the second hole transporting layer and the electron blocking layer can be referred to as a hole transporting layer, and the electron injecting layer, the second electron transporting layer and the hole blocking layer can be referred to as an electron transmitting layer.
  • a first charge generating layer can be disposed between the second hole transporting layer and the second electron transporting layer of the first auxiliary layer 208 .
  • the first charge generating layer can adjust a charge balance between the first emitting material layer 203 a and the second emitting material layer 203 b .
  • the hole injecting layer can be disposed between the second hole transporting layer and the first charge generating layer
  • the electron injecting layer can be disposed between the first charge generating layer and the second electron transporting layer.
  • the first charge generating layer can include a positive type charge generating layer (P-CGL) and a negative type charge generating layer (N-CGL).
  • the positive type charge generating layer can supply a hole to the first emitting material layer 203 a
  • the negative type charge generating layer can supply an electron to the second emitting material layer 203 b.
  • An electron is supplied from the first auxiliary layer 208 to the second emitting material layer 203 b , and a hole is supplied from the second auxiliary layer 209 to the second emitting material layer 203 b .
  • the electron supplied from the first auxiliary layer 208 and the hole supplied from the second auxiliary layer 209 are recombined in the second emitting material 203 b to generate a light.
  • the second emitting material layer 203 b can emit a light of a second color.
  • the second emitting material layer 203 b can include one of a yellow-green emitting layer, a green emitting layer, a yellow-green emitting layer and a red emitting layer, a yellow emitting layer and a red emitting layer, and a green emitting layer and a red emitting layer.
  • the light emitted from the second emitting material layer 203 b can have a wavelength of 510 nm to 580 nm.
  • the second emitting material layer 203 b includes a yellow-green emitting layer and a red emitting layer, the light emitted from the second emitting material layer 203 b can have a wavelength of 510 nm to 650 nm.
  • the light emitted from the second emitting material layer 203 b can have a wavelength of 540 nm to 650 nm.
  • the second emitting material layer 203 b includes a green emitting layer and a red emitting layer, the light emitted from the second emitting material layer 203 b can have a wavelength of 510 nm to 650 nm.
  • the second emitting material layer 203 b can include at least one host and at least one dopant or a mixed host where at least two hosts are mixed and at least one dopant.
  • the mixed host includes a host having a hole transporting property and a host having an electron transporting property, a charge balance of the second emitting material layer 203 b can be adjusted and an efficiency of the second emitting material layer 203 b can be improved.
  • the dopant can include a fluorescent dopant or a phosphorescent dopant.
  • the second auxiliary layer 209 can include a third hole transporting layer adjacent to the second emitting material layer 203 b and a third electron transporting layer adjacent to the third emitting material layer 203 c.
  • a hole injecting layer can be disposed between the third hole transporting layer and the third emitting material layer 203 c , and an electron injecting layer can be disposed between the third electron transporting layer and the second emitting material layer 203 b.
  • An electron blocking layer can be disposed between the second emitting material layer 203 b and the third hole transporting layer. Since the electron blocking layer prevents transmission of an electron injected into the third second emitting material layer 203 b to the third hole transporting layer, combination of a hole and an electron is improved in the second emitting material layer 203 b and an emission efficiency of the second emitting material layer 203 b is improved.
  • a hole blocking layer can be disposed between the third electron transporting layer and the third emitting material layer 203 c . Since the hole blocking layer prevents transmission of a hole injected into the third emitting material layer 203 c to the third electron transporting layer, combination of a hole and an electron is improved in the third emitting material layer 203 c and an emission efficiency of the third emitting material layer 203 c is improved.
  • the electron blocking layer and the third hole transporting layer can be formed as a single layer, and the third electron transporting layer and the hole blocking layer can be formed as a single layer.
  • the hole injecting layer, the third hole transporting layer and the electron blocking layer can be referred to as a hole transporting layer, and the electron injecting layer, the third electron transporting layer and the hole blocking layer can be referred to as an electron transmitting layer.
  • a second charge generating layer can be disposed between the third hole transporting layer and the third electron transporting layer of the second auxiliary layer 209 .
  • the second charge generating layer can adjust a charge balance between the second emitting material layer 203 b and the third emitting material layer 203 c .
  • the hole injecting layer can be disposed between the third hole transporting layer and the second charge generating layer
  • the electron injecting layer can be disposed between the second charge generating layer and the third electron transporting layer.
  • the second charge generating layer can include a positive type charge generating layer (P-CGL) and a negative type charge generating layer (N-CGL).
  • the positive type charge generating layer can supply a hole to the second emitting material layer 203 b
  • the negative type charge generating layer can supply an electron to the third emitting material layer 203 c.
  • An electron is supplied from second auxiliary layer 209 to the third emitting material layer 203 c , and a hole is supplied from the first electrode 111 to the third emitting material layer 203 c through the first hole transporting layer 207 .
  • the electron supplied from the second auxiliary layer 209 and the hole supplied through the first hole transporting layer 207 are recombined in the third emitting material 203 c to generate a light.
  • the third emitting material layer 203 c can emit a light of a third color the same as the first color of the light of the first emitting material layer 203 a .
  • the third emitting material layer 203 c can include one of a blue emitting layer, a deep blue emitting layer and a sky blue emitting layer.
  • the light emitted from the third emitting material layer 203 c can have a wavelength of 440 nm to 480 nm.
  • the third emitting material layer 203 c can include at least one host and at least one dopant or a mixed host where at least two hosts are mixed and at least one dopant.
  • the mixed host includes a host having a hole transporting property and a host having an electron transporting property, a charge balance of the third emitting material layer 203 c can be adjusted and an efficiency of the third emitting material layer 203 c can be improved.
  • the dopant can include a fluorescent dopant or a phosphorescent dopant.
  • the light emitting diode E includes three emitting material layers 203 a , 203 b and 203 c between the first electrode 111 and the second electrode 115 .
  • the light emitting diode can include two emitting material layers.
  • the first, second and third emitting material layers 203 a , 203 b and 203 c are disposed to correspond to the micro lens ML of the light emitting layer 113 such that the light emitting diode E has a micro cavity effect. As a result, the light extraction efficiency of the OLED display device 100 is improved.
  • the positions of the first, second and third emitting material layers 203 a , 203 b and 203 c in the light emitting layer 113 can be determined according to following Equations 4, 5 and 6.
  • D 1 , D 2 and D 3 are first, second and third distances from second electrode 115 to the first, second and third emitting material layers 203 a , 203 b and 203 c , respectively, of the light emitting layer 113 in the concave portion 118 .
  • L 1 , L 2 and L 3 are first, second and third distances from the second electrode 115 to the first, second and third emitting material layers 203 a , 203 b and 203 c , respectively, of the light emitting layer 113 in the side surface portion 117 c of the convex portion 117 where the main emission occurs.
  • the first, second and third distances D 1 , D 2 and D 3 in the concave portion 118 of the light emitting layer 113 are different from the first, second and third distances L 1 , L 2 and L 3 in the convex portion 117 of the effective emission region B of the light emitting layer 113 .
  • the first, second and third distances L 1 , L 2 and L 3 in the convex portion 117 of the effective emission region B of the light emitting layer 113 can be obtained from the light emitting diode E having the micro cavity, and the first, second and third distances D 1 , D 2 and D 3 in the concave portion 118 of the light emitting layer 113 can be obtained from the Equations 4, 5 and 6.
  • the first, second and third distances D 1 , D 2 and D 3 can be used as target thicknesses for deposition of the first, second and third emitting material layers 203 a , 203 b and 203 c . As a result, the light extraction efficiency of the OLED display device 100 is improved.
  • a thickness from an upper surface of the first electrode 111 of an anode to a lower surface of the second electrode 115 of a cathode can be within a range of 4900 ⁇ to 5300 ⁇ .
  • the first distance D 1 from the second electrode 115 to the first emitting material layer 203 a can be within a range of 555 ⁇ to 615 ⁇ (585 ⁇ with a margin of error of ⁇ 5%)
  • the second distance D 2 from the second electrode 115 to the second emitting material layer 203 b can be within a range of 2735 ⁇ to 3025 ⁇ (2880 ⁇ with a margin of error of ⁇ 5%)
  • the third distance D 3 from the second electrode 115 to the third emitting material layer 203 c can be within a range of 3450 ⁇ to 3815 ⁇ (3630 ⁇ with a margin of error of ⁇ 5%).
  • the first electrode 111 is a transparent electrode transmitting a light and the second electrode 115 is a transflective electrode transmitting a part of a light and reflecting the other part of the light
  • a light efficiency can be improved due to a micro cavity effect between the first electrode 111 and the second electrode 115 .
  • the micro cavity effect is a phenomenon such that a constructive interference of a light occurs due to repetition of reflection and re-reflection between the first electrode 111 and the second electrode 115 and a light efficiency is improved.
  • the first, second and third emitting material layers 203 a , 203 b and 203 c emitting a light can be disposed at resonance positions between the first electrode 111 and the second electrode 115 according to a wavelength.
  • the resonance position can correspond to a resonance distance from the second electrode 115 , and the resonance distance can be obtained from a integer multiple of a half of the wavelength of the emitted light.
  • the light of the corresponding wavelength is strengthened by a constructive interference and is extracted to an exterior with an increased intensity. Further, the light of the other wavelength is weakened by a destructive interference and is extracted to an exterior with a decreased intensity.
  • the lights emitted from the first, second and third emitting material layers 203 a , 203 b and 203 c have different emission spectrums according to a length of light path when the lights are extracted through the first electrode 111 .
  • the first, second and third emitting material layers 203 a , 203 b and 203 c are disposed at the resonance positions corresponding to the resonance distances for improving the light efficiency using the micro cavity effect.
  • the light emitting layer 113 constitutes the microlens ML where the light emitting layer 113 has different thicknesses d 1 , d 2 , d 3 and d 4 in the convex portion 117 and the concave portion 118 , the first, second and third emitting material layers 203 a , 203 b and 203 c of the effective emission region B of the light emitting layer 113 are disposed at the resonance positions. As a result, the light efficiency of the OLED display device 100 is improved due to the micro cavity effect.
  • FIGS. 4A, 4B and 4C are graphs showing an intensity of a light according to a position of first, second and third emitting material layers, respectively, of an organic light emitting diode display device according to an embodiment of the present disclosure.
  • the first emitting material layer 203 a is disposed at the first position having the distance of 585 ⁇ (with a margin of error of ⁇ 5%) corresponding to the range of 555 ⁇ to 615 ⁇ .
  • the second emitting material layer 203 b is disposed at the second position having the distance of 2880 ⁇ (with a margin of error of ⁇ 5%) corresponding to the range of 2735 ⁇ to 3025 ⁇ .
  • the third emitting material layer 203 c is disposed at the third position having the distance of 3630 ⁇ (with a margin of error of ⁇ 5%) corresponding to the range of 3450 ⁇ to 3815 ⁇ .
  • the light emitting layer 113 constitutes the microlens ML where the light emitting layer 113 has different thicknesses d 1 , d 2 , d 3 and d 4 in the convex portion 117 and the concave portion 118 , since the first, second and third emitting material layers 203 a , 203 b and 203 c of the effective emission region B of the light emitting layer 113 are disposed at the resonance positions based on the microlens ML, the light efficiency of the OLED display device 100 is improved due to the micro cavity effect.
  • FIGS. 5A and 5B are graphs showing an intensity of a light according to a wavelength of a light extracted from an organic light emitting diode display device having a microlens and an organic light emitting diode display device according to an embodiment of the present disclosure, respectively.
  • a sample 1 corresponds to an organic light emitting diode display device according to the related art
  • a sample 2 corresponds to an organic light emitting diode display device having a microlens without a micro cavity effect
  • a sample 3 corresponds to an organic light emitting diode display device 100 having a microlens with a microcavity effect according to an embodiment of the present disclosure.
  • the x-axis represents a wavelength of a light and the y-axis represents an intensity of a light.
  • the intensity is a relative value with respect to the maximum of the emission spectrum. For example, the value of 0.34 (a.u.) of the blue emission spectrum is the maximum and the relative value of the yellow-green emission spectrum with respect to the maximum is shown.
  • the sample 2 has the higher emission spectrum as compared with the sample 1 .
  • the OLED display device (sample 2 ) having the microlens ML (of FIG. 2 ) of the overcoating layer 108 (of FIG. 2 ) without the microcavity effect has the greater light amount in the visible ray band as compared with the OLED display device (sample 1 ) without the microlens.
  • the sample 3 has the higher emission spectrum as compared with the sample 2 as well as the sample 1 .
  • the OLED display device 100 (sample 3 ) having the microlens ML of the overcoating layer 108 with the microcavity effect has the greater light amount in the visible ray band as compared with the OLED display device (sample 2 ) having the microlens ML without the microcavity effect.
  • the OLED display device 100 (sample 3 ) has the greater light extraction efficiency as compared with the OLED display device (sample 2 ) as well as the OLED display device (sample 1 ).
  • the distances L 1 , L 2 and L 3 from the second electrode 115 to the emitting material layers 203 a , 203 b and 203 c in the convex portion 117 of the effective emission region B can be determined such that the microlens ML has the micro cavity effect, and the target thicknesses Y 1 , Y 2 and Y 3 which are the distances from the second electrode 115 to the emitting material layers 203 a , 203 b and 203 c in the concave portion 118 can be determined according to the Equation 3. As a result, the visibility of the black color is improved.
  • the distances of the first, second and third emitting material layers 203 a , 203 b and 203 c can be determined according to following Equations 7, 8 and 9.
  • Y 1 , Y 2 and Y 3 are the first, second and third distances from the second electrode 115 to the first, second and third emitting material layers 203 a , 203 b and 203 c of the light emitting layer 113 in the concave portion 118 .
  • Y 1 , Y 2 and Y 3 are within a range of 3000 ⁇ to 3500 ⁇ .
  • L 1 , L 2 and L 3 are the first, second and third distances from the second electrode 115 to the first, second and third emitting material layers 203 a , 203 b and 203 c of the light emitting layer 113 in the convex portion 117 of the effective emission region B.
  • the OLED display device 100 where the visibility of the black color is improved is obtained by determining the first, second and third distances Y 1 , Y 2 and Y 3 according to the Equations 7, 8 and 9.
  • the thickness of the first emitting material layer 203 a is decreased, the light extraction effect of the first emitting material layer 203 a can be reduced. As a result, the minimum value of the distance L 1 from the second electrode 115 to the first emitting material layer 203 a is omitted in the Equation 7.
  • the first distance L 1 can be determined within a range of 280 ⁇ to 300 ⁇
  • the second distance L 2 can be determined within a range of 2150 ⁇ to 2550 ⁇
  • the third distance L 3 can be determined within a range of 3000 ⁇ to 3500 ⁇ .
  • FIG. 6 is a graph showing a reflectance of a microlens with respect to an aspect ratio of a microlens of an organic light emitting diode display device according to an embodiment of the present disclosure.
  • the reflectance of the microlens ML increases.
  • the reflectance of the microlens ML varies according to the thickness of the light emitting layer 113 in the similar aspect ratio of the microlens ML.
  • the reflectance of the microlens ML of the light emitting layer 113 of the thickness smaller than 3500 ⁇ is smaller than the reflectance of the microlens ML of the light emitting layer 113 of the thickness equal to or greater than 3500 ⁇ .
  • the aspect ratio A/R of the microlens ML can be defined as a value of the height H of the top surface portion 117 b of the overcoating layer 108 with respect to the half of the diameter D of the bottom surface portion 117 a .
  • the aspect ratio of the microlens ML can have the aspect ratio of 0.4 to 0.5.
  • the thickness of the light emitting layer 113 is smaller than 3500 ⁇ , the reflectance with respect to the wavelength is definitely reduced.
  • FIGS. 7A, 7B and 7C are graphs showing an emission efficiency according to a voltage of red, green and blue sub-pixels, respectively, of an organic light emitting diode display device according to an embodiment of the present disclosure, and TABLE 1 shows distances from a second electrode to emitting material layers of an organic light emitting diode display device according to the present disclosure.
  • samples 5 , 6 and 7 correspond to an organic light emitting diode display device having a microlens without a micro cavity effect where a light emitting layer 113 has a thickness equal to or greater than 3500 ⁇
  • samples 8 , 9 and 10 correspond to an organic light emitting diode display device 100 having a microlens with a micro cavity effect according to an embodiment of the present disclosure.
  • the emission efficiency of the red sub-pixel of the samples 5 , 6 and 7 is similar to the emission efficiency of the red sub-pixel of the samples 8 , 9 and 10 .
  • the emission efficiency of the green sub-pixel of the samples 5 , 6 and 7 is similar to the emission efficiency of the green sub-pixel of the samples 8 , 9 and 10 .
  • the emission efficiency of the blue sub-pixel of the samples 5 , 6 and 7 is similar to the emission efficiency of the blue sub-pixel of the samples 8 , 9 and 10 .
  • the OLED display device 100 Since the first, second and third distances L 1 , L 2 and L 3 are determined according to the Equations 7, 8 and 9, the OLED display device 100 has the emission efficiency similar to the OLED display device according to the related art and the reflectance of the light emitting layer 113 is reduced even when the light emitting layer 113 has a thickness greater than 3500 ⁇ .
  • the reflectance is reduced, the reflectance visibility of the black color of the OLED display device 100 in a black state can be improved and a user can recognize a clear black.
  • the OLED display device according to the related art since the OLED display device according to the related art has a relatively high reflectance in a black state, a user can not recognize a clear black. However, since the OLED display device 100 has a relatively low reflectance due to the positions of the emitting material layers 203 a , 203 b and 203 c , the reflectance visibility can be improved and a user can recognize a clear black.
  • the distances Y 1 , Y 2 and Y 3 from the second electrode 115 to the emitting material layers 203 a , 203 b and 203 c in the concave portion 118 are determined based on the distances L 1 , L 2 and L 3 from the second electrode 115 to the emitting material layers 203 a , 203 b and 203 c in the convex portion 117 of the effective emission region B according to the Equation 3.
  • the distances L 1 , L 2 and L 3 from the second electrode 115 to the emitting material layers 203 a , 203 b and 203 c in the convex portion 117 of the effective emission region B are determined based on a micro cavity.
  • the distances Y 1 , Y 2 and Y 3 from the second electrode 115 to the emitting material layers 203 a , 203 b and 203 c in the concave portion 118 are determined different from the distances L 1 , L 2 and L 3 from the second electrode 115 to the emitting material layers 203 a , 203 b and 203 c in the convex portion 117 of the effective emission region B.
  • the light extraction efficiency is improved and reduction in visibility of the black color due to a relatively high reflectance is prevented in the OLED display device 100 .
  • the present disclosure also relates to and is not limited to the following aspects.
  • the organic light emitting diode display device includes: a substrate; an overcoating layer on the substrate and including a plurality of convex portions and a plurality of concave portions; a first electrode on the overcoating layer; a light emitting layer on the first electrode and including a first emitting material layer; and a second electrode on the light emitting layer, wherein the first emitting material layer in the plurality of convex portions is separated from the second electrode by a first distance, and wherein the first emitting material layer in the plurality of concave portions is separated from the second electrode by a second distance different from the first distance.
  • At least one of the plurality of convex portions includes a bottom surface portion, a top surface portion and a side surface portion between the bottom surface portion and the top surface portion, a slope of the side surface portion increases from the bottom surface portion to the top surface portion, and the side surface portion has a maximum slope at an effective emission region.
  • the distance from the second electrode to the first emitting material layer in the plurality of concave portions is within a range of 555 ⁇ to 615 ⁇
  • the distance from the second electrode to the second emitting material layer in the plurality of concave portions is within a range of 2735 ⁇ to 3025 ⁇
  • the distance from the second electrode to the third emitting material layer in the plurality of concave portions is within a range of 3450 ⁇ to 3815 ⁇ .
  • the light emitting layer has a thickness within a range of 3000 ⁇ to 3500 ⁇ .
  • a thickness of the light emitting layer corresponding to the plurality of convex portions is smaller than a thickness of the light emitting layer corresponding to the plurality of concave portions.
  • the first and third emitting material layers emit a light of a first color
  • the second emitting material layer emits a light of a second color different from the first color
  • the first color corresponds to a wavelength within a range of 440 nm to 480 nm
  • the second color corresponds to a wavelength within a range of 510 nm to 590 nm.
  • the first emitting material layer, the second emitting material layer and the third emitting material layer include a first blue emitting layer, a yellow-green emitting layer and a second blue emitting layer, respectively.

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GB2576613A (en) 2020-02-26
DE102019117580A1 (de) 2020-01-02
KR102583619B1 (ko) 2023-09-26
CN110660825B (zh) 2023-05-12
US20200006709A1 (en) 2020-01-02
GB201909326D0 (en) 2019-08-14
DE102019117580B4 (de) 2022-03-24

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