US10991603B2 - Apparatus and method for treating substrate - Google Patents

Apparatus and method for treating substrate Download PDF

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US10991603B2
US10991603B2 US16/556,025 US201916556025A US10991603B2 US 10991603 B2 US10991603 B2 US 10991603B2 US 201916556025 A US201916556025 A US 201916556025A US 10991603 B2 US10991603 B2 US 10991603B2
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substrate
unit
lamp
ozone
nozzle
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US20200075355A1 (en
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Oh Jin Kwon
Chong-Min Ryu
Young Ho Choo
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Semes Co Ltd
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Semes Co Ltd
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Assigned to SEMES CO., LTD. reassignment SEMES CO., LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: CHOO, YOUNG HO, KWON, OH JIN, RYU, CHONG-MIN
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B11/00—Cleaning flexible or delicate articles by methods or apparatus specially adapted thereto
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00—Accessories or details of general applicability for machines or apparatus for cleaning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02—Cleaning by the force of jets or sprays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

Definitions

  • Embodiments of the inventive concept described herein relate to a substrate treating apparatus and method, and more particularly, relate to an apparatus and method for stripping unnecessary photoresist (PR) from a substrate.
  • PR photoresist
  • various processes such as a photoresist coating process, a developing process, an etching process, an ashing process, and the like are performed to treat a glass substrate or a wafer in a process of manufacturing a flat panel display device or a semiconductor device.
  • a substrate is sequentially subjected to a spin coating process, a soft bake process, an aligning and exposing process, a developing process, a cleaning and drying process, a hard bake process, an etching process, a photoresist stripping process, and the like.
  • the exposing, developing, and etching processes are performed by using photoresist as a masking film, and the photoresist is removed after completely used as the masking film because the photoresist is no longer needed. The removal of the photoresist is performed through a stripping process.
  • the photoresist is removed by using an SPM solution (H 2 SO 4 +H 2 O 2 ) or a DSP solution (H 2 SO 4 +HF+H 2 O 2 ) that is a chemical solution used at high temperature like sulfuric acid or phosphoric acid.
  • SPM solution H 2 SO 4 +H 2 O 2
  • DSP solution H 2 SO 4 +HF+H 2 O 2
  • the existing stripping process indispensably requires a mixing tank for mixing sulfuric acid and hydrogen peroxide and a heating device for maintaining the mixed stripping solution at a high temperature of 90° C. to 150° C. Due to this, a stripping apparatus using the existing stripping solution occupies a large footprint in a semiconductor clean room and fails to satisfy a requirement of clustering between processes.
  • Embodiments of the inventive concept provide a substrate treating apparatus and method that does not incur wastewater treatment cost.
  • Embodiments of the inventive concept provide a substrate treating apparatus and method for enhancing the reactivity of OH radicals.
  • Embodiments of the inventive concept provide a substrate treating apparatus and method for improving efficiency in removing a photoresist film and an organic residue.
  • a method for treating a substrate includes a mixing step of preparing an ozone treatment fluid containing an ozone gas and a substrate treating step of treating a surface of the substrate using the ozone treatment fluid.
  • the substrate treating step light is irradiated to the substrate by a lamp.
  • the ozone treatment fluid may be ozone water in which the ozone gas is dissolved in deionized water.
  • At least one of a nitrogen gas and carbon dioxide may be mixed with the ozone water.
  • ultraviolet light may be irradiated to the substrate.
  • infrared light may be irradiated to the substrate.
  • ultraviolet light and infrared light may be simultaneously irradiated to the substrate.
  • a heat source may be provided on a backside of the substrate, or high-temperature deionized water may be dispensed onto the backside of the substrate.
  • a nozzle may dispense the ozone treatment fluid onto the rotating substrate while swinging.
  • the light of the lamp may be irradiated to a region of the substrate onto which the ozone treatment fluid is dispensed.
  • the ozone treatment fluid may be dispensed onto the substrate after being prepared in the nozzle in the mixing step.
  • the ozone treatment fluid may remove a photoresist film or an organic residue on the surface of the substrate.
  • an apparatus for treating a substrate includes a chamber, a substrate support unit that is provided in the chamber and on which the substrate is placed, an ozone gas supply unit that supplies an ozone gas, a dispensing nozzle that dispenses, onto the substrate, an ozone treatment fluid containing the ozone gas supplied from the ozone gas supply unit, and a lamp unit that irradiates light to the substrate.
  • the apparatus may further include a deionized-water supply unit that supplies deionized water to the dispensing nozzle.
  • the dispensing nozzle may include a mixing space in which the deionized water supplied from the deionized-water supply unit and the ozone gas supplied from the ozone gas supply unit are mixed and a dispensing opening through which the ozone treatment fluid prepared in the mixing space is dispensed.
  • the lamp unit may irradiate the light to a region of the substrate onto which the ozone treatment fluid is dispensed.
  • the lamp unit may include an infrared (IR) lamp that irradiates infrared light.
  • IR infrared
  • the lamp unit may include an ultraviolet (UV) lamp that irradiates ultraviolet light.
  • UV ultraviolet
  • the lamp unit may include a UV lamp that irradiates ultraviolet light and an IR lamp that irradiates infrared light.
  • the substrate support unit may include a heating unit that heats the substrate.
  • the substrate support unit may include a back nozzle that dispenses a high-temperature fluid onto a backside of the substrate.
  • the apparatus may further include a nozzle actuator that swings the dispensing nozzle to cause the dispensing nozzle to dispense the ozone treatment fluid while moving from the center of the substrate to the edge thereof.
  • the apparatus may further include an arm on which the dispensing nozzle and the lamp unit are mounted.
  • the arm may be operated by the nozzle actuator.
  • the apparatus may further include a moving unit that moves the dispensing nozzle and the lamp unit to vary positions of the dispensing nozzle and the lamp unit relative to the substrate support unit and a controller that controls the moving unit to vary a region of the substrate to which the ozone treatment fluid and the light are supplied.
  • the dispensing nozzle and the lamp unit may be individually operated by separate actuators.
  • the apparatus may further include a catalytic gas supply unit that supplies a catalytic gas to the dispensing nozzle.
  • the catalytic gas supply unit may supply the catalytic gas into the mixing space.
  • the catalytic gas may include at least one of a nitrogen gas and carbon dioxide.
  • FIG. 1 is a schematic plan view illustrating substrate treating equipment including a substrate treating apparatus according to an embodiment of the inventive concept
  • FIG. 2 is a plan view illustrating the substrate treating apparatus of FIG. 1 ;
  • FIG. 3 is a sectional view illustrating the substrate treating apparatus of FIG. 1 ;
  • FIG. 4 is a view illustrating a fluid supply unit
  • FIG. 5 is a sectional view illustrating a nozzle
  • FIGS. 6 and 7 are views illustrating a stripping process in the substrate treating apparatus according to an embodiment of the inventive concept
  • FIG. 8 is a view illustrating another embodiment of the fluid supply unit
  • FIG. 9 is a view illustrating a modified embodiment of the inventive concept.
  • FIG. 10 is a view illustrating another modified embodiment of the inventive concept.
  • FIG. 11 is a view illustrating another modified embodiment of the inventive concept.
  • inventive concept allows for various changes and numerous embodiments, exemplary embodiments will be illustrated in the drawings and described in detail in the written description. However, this is not intended to limit the inventive concept to particular modes of practice, and it should be appreciated that all changes, equivalents, and substitutes that do not depart from the spirit and scope of the inventive concept are encompassed in the inventive concept. In describing the inventive concept, detailed descriptions related to well-known functions or configurations will be omitted when they may make subject matters of the inventive concept obscure.
  • first, second, and the like may be used to describe various components, but the components should not be limited by the terms. The terms may be used only for distinguishing one component from others.
  • FIG. 1 is a schematic plan view illustrating substrate treating equipment 1 of the inventive concept.
  • the substrate treating equipment 1 includes an index module 1000 and a process module 2000 .
  • the index module 1000 includes a load port 1200 and a transfer frame 1400 .
  • the load port 1200 , the transfer frame 1400 , and the process module 2000 are sequentially arranged in a row.
  • the direction in which the load port 1200 , the transfer frame 1400 , and the process module 2000 are arranged is referred to as a first direction 12 .
  • a direction perpendicular to the first direction 12 when viewed from above is referred to as a second direction 14
  • a direction perpendicular to the plane including the first direction 12 and the second direction 14 is referred to as a third direction 16 .
  • a carrier 1300 having substrates W received therein is placed on the load port 1200 .
  • a plurality of load ports 1200 may be provided.
  • the load ports 1200 may be arranged in a row along the second direction 14 .
  • FIG. 1 illustrates an example that the index module 1000 includes four load ports 1200 .
  • the number of load ports 1200 may be increased or decreased depending on conditions such as the process efficiency and the footprint of the process module 2000 .
  • the carrier 1300 has slots (not illustrated) that are formed therein to support the edges of the substrates W.
  • the slots are arranged in the third direction 16 .
  • the substrates W are stacked in the carrier 1300 in the state of being spaced apart from each other along the third direction 16 .
  • a Front Opening Unified Pod (FOUP) may be used as the carrier 1300 .
  • FOUP Front Opening Unified Pod
  • the process module 2000 includes a buffer unit 2200 , a transfer chamber 2400 , and process chambers 2600 .
  • the transfer chamber 2400 is arranged such that the lengthwise direction thereof is parallel to the first direction 12 .
  • the process chambers 2600 are disposed on opposite sides of the transfer chamber 2400 along the second direction 14 .
  • the process chambers 2600 on the one side of the transfer chamber 2400 and the process chambers 2600 on the opposite side of the transfer chamber 2400 are located in a symmetric arrangement with respect to the transfer chamber 2400 .
  • Some of the process chambers 2600 on each side of the transfer chamber 2400 are arranged along the lengthwise direction of the transfer chamber 2400 .
  • the other process chambers 2600 are stacked one above another along the third direction 16 .
  • the process chambers 2600 may be arranged in an A ⁇ B array (A and B being natural numbers of 1 or larger) on each side of the transfer chamber 2400 .
  • A is the number of process chambers 2600 arranged in a row along the first direction 12
  • B is the number of process chambers 2600 arranged in a column along the third direction 16 .
  • the process chambers 2600 may be arranged in a 2 ⁇ 2 or 3 ⁇ 2 array.
  • the number of process chambers 2600 may be increased or decreased.
  • the process chambers 2600 may be provided on only the one side of the transfer chamber 2400 .
  • the process chambers 2600 may be arranged in a single layer on the opposite sides of the transfer chamber 2400 .
  • the buffer unit 2200 is disposed between the transfer frame 1400 and the transfer chamber 2400 .
  • the buffer unit 2200 provides a space in which the substrates W stay before transferred between the transfer chamber 2400 and the transfer frame 1400 .
  • the buffer unit 2200 has slots (not illustrated) therein, on which the substrates W are placed. The slots (not illustrated) are spaced apart from each other along the third direction 16 .
  • the buffer unit 2200 is open at one side opposite the transfer frame 1400 and at an opposite side opposite the transfer chamber 2400 .
  • the transfer frame 1400 transfers the substrates W between the carriers 1300 placed on the load ports 1200 and the buffer unit 2200 .
  • An index rail 1420 and an index robot 1440 are provided in the transfer frame 1400 .
  • the index rail 1420 is arranged such that the lengthwise direction thereof is parallel to the second direction 14 .
  • the index robot 1440 is mounted on the index rail 1420 and rectilinearly moves along the index rail 1420 in the second direction 14 .
  • the index robot 1440 has a base 1441 , a body 1442 , and an index arm 1443 .
  • the base 1441 is installed so as to be movable along the index rail 1420 .
  • the body 1442 is combined with the base 1441 .
  • the body 1442 is movable along the third direction 16 on the base 1441 .
  • the body 1442 is rotatable on the base 1441 .
  • the index arm 1443 is combined with the body 1442 and is movable forward and backward relative to the body 1442 .
  • the index robot 1440 may include a plurality of index arms 1443 that operate individually.
  • the index arms 1443 are stacked one above another along the third direction 16 with a spacing gap therebetween.
  • Some of the index arms 1443 may be used to transfer the substrates W from the process module 2000 to the carriers 1300
  • the other index arms 1443 may be used to transfer the substrates W from the carriers 1300 to the process module 2000 . Accordingly, particles generated from the substrates W to be treated may be prevented from adhering to the treated substrates W in the process in which the index robot 1440 transfers the substrates W.
  • the transfer chamber 2400 transfers the substrates W between the buffer unit 2200 and the process chambers 2600 and between the process chambers 2600 .
  • a guide rail 2420 and a main robot 2440 are provided in the transfer chamber 2400 .
  • the guide rail 2420 is arranged such that the lengthwise direction thereof is parallel to the first direction 12 .
  • the main robot 2440 is mounted on the guide rail 2420 and rectilinearly moves along the first direction 12 on the guide rail 2420 .
  • the main robot 2440 has a base 2441 , a body 2442 , and a main arm 2443 .
  • the base 2441 is installed so as to be movable along the guide rail 2420 .
  • the body 2442 is combined with the base 2441 .
  • the body 2442 is movable along the third direction 16 on the base 2441 . Furthermore, the body 2442 is rotatable on the base 2441 .
  • the main arm 2443 is combined with the body 2442 and is movable forward and backward relative to the body 2442 .
  • the main robot 2440 may include a plurality of main arms 2443 that operate individually. The main arms 2443 are stacked one above another along the third direction 16 with a spacing gap therebetween.
  • the main arms 2443 used to transfer the substrates W from the buffer unit 2200 to the process chambers 2600 may differ from the main arms 2443 used to transfer the substrates W from the process chambers 2600 to the buffer unit 2200 .
  • Each of the process chambers 2600 has a substrate treating apparatus 10 therein, which performs a cleaning process on a substrate W.
  • the substrate treating apparatuses 10 in the respective process chambers 2600 may have different structures according to the types of cleaning processes performed by the substrate treating apparatuses 10 .
  • the substrate treating apparatuses 10 in the respective process chambers 2600 may have the same structure.
  • the process chambers 2600 may be divided into a plurality of groups.
  • the substrate treating apparatuses 10 in the process chambers 2600 belonging to the same group may have the same structure, and the substrate treating apparatuses 10 in the process chambers 2600 belonging to different groups may have different structures.
  • a first group of process chambers 2600 may be disposed on the one side of the transfer chamber 2400 , and a second group of process chambers 2600 may be disposed on the opposite side of the transfer chamber 2400 .
  • the first group of process chambers 2600 may be disposed in a lower layer, and the second group of process chambers 2600 may be disposed in an upper layer.
  • the first group of process chambers 2600 may be distinguished from the second group of process chambers 2600 according to the types of chemicals used and the types of cleaning processes.
  • treating fluids e.g., an ozone treatment fluid containing ozone, a rinsing solution, and a drying gas
  • an ultraviolet (or infrared) lamp will be described as an example in the following embodiment.
  • FIG. 2 is a plan view illustrating the substrate treating apparatus of FIG. 1
  • FIG. 3 is a sectional view illustrating the substrate treating apparatus of FIG. 1 .
  • the substrate treating apparatus 10 includes a chamber 800 , a processing vessel 100 , a substrate support unit 200 , a heating unit 250 , a treating fluid supply unit 300 , a process exhaust unit 500 , a lifting unit 600 , and a lamp unit 900 .
  • the chamber 800 has a sealed inner space.
  • the chamber 800 is equipped with an air-flow supply unit 810 at the top thereof.
  • the air-flow supply unit 810 forms a downward flow of air in the chamber 800 .
  • the air-flow supply unit 810 filters and supplies high-humidity outside air into the chamber 800 .
  • the high-humidity outside air forms a downward air flow while being supplied into the chamber 800 through the air-flow supply unit 810 .
  • the downward air flow provides a uniform air flow over the substrate W and releases contaminants, which are generated in the process in which the surface of the substrate W is treated by the treating fluids, along with air to the process exhaust unit 500 through recovery bowls 110 , 120 , and 130 of the processing vessel 100 .
  • the chamber 800 is partitioned into a process area 816 and a maintenance area 818 by a horizontal partition wall 814 .
  • the processing vessel 100 and the substrate support unit 200 are located in the process area 816 .
  • An actuator of the lifting unit 600 , an actuator connected with the treating fluid supply unit 300 , and a supply line are located in the maintenance area 818 , in addition to drain lines 141 , 143 , and 145 connected with the processing vessel 100 and an exhaust line 510 .
  • the maintenance area 818 is isolated from the process area 816 .
  • the processing vessel 100 has an open-topped cylindrical shape and provides a process space for treating the substrate W.
  • the open top side of the processing vessel 100 serves as a passage through which the substrate W is carried into or out of the processing vessel 100 .
  • the substrate support unit 200 is located in the process space. The substrate support unit 200 rotates the substrate W while supporting the substrate W during a process.
  • the processing vessel 100 has, at the bottom thereof, a lower space to which an exhaust duct 190 is connected to perform forced exhaust.
  • the processing vessel 100 includes the first to third recovery bowls 110 , 120 , and 130 that are disposed in multiple stages and that take in the treating fluids and gases scattered over the rotating substrate W.
  • the first to third annular recovery bowls 110 , 120 , and 130 have exhaust holes H that connect to one common annular space.
  • each of the first to third recovery bowls 110 , 120 , and 130 includes a bottom wall having an annular ring shape and a sidewall having a cylindrical shape extending from the bottom wall.
  • the second recovery bowl 120 surrounds the first recovery bowl 110 and is spaced apart from the first recovery bowl 110 .
  • the third recovery bowl 130 surrounds the second recovery bowl 120 and is spaced apart from the second recovery bowl 120 .
  • the first to third recovery bowls 110 , 120 , and 130 have first to third recovery spaces RS 1 , RS 2 , and RS 3 , respectively, into which a gas flow containing the treating fluids and fumes scattered from the substrate W is introduced.
  • the first recovery space RS 1 is defined by the first recovery bowl 110
  • the second recovery space RS 2 is defined by the spacing space between the first recovery bowl 110 and the second recovery bowl 120
  • the third recovery space RS 3 is defined by the spacing space between the second recovery bowl 120 and the third recovery bowl 130 .
  • each of the first to third recovery bowls 110 , 120 , and 130 is open in the center.
  • the first to third recovery bowls 110 , 120 , and 130 each include an inclined wall that is upwardly inclined such that the distance between the inclined wall and the corresponding bottom wall gradually increases from the sidewall to the open top side.
  • the treating fluids scattered from the substrate W flow into the recovery spaces RS 1 , RS 2 , and RS 3 along the top sides of the first to third recovery bowls 110 , 120 , and 130 .
  • a first treating liquid introduced into the first recovery space RS 1 is discharged to the outside through the first recovery line 141 .
  • a second treating liquid introduced into the second recovery space RS 2 is discharged to the outside through the second recovery line 143 .
  • a third treating liquid introduced into the third recovery space RS 3 is discharged to the outside through the third recovery line 145 .
  • the process exhaust unit 500 is responsible for evacuation of the processing vessel 100 .
  • the process exhaust unit 500 applies exhaust pressure (suction pressure) to a recovery bowl that recovers a treating fluid during a process, among the first to third recovery bowls 110 , 120 , and 130 .
  • the process exhaust unit 500 includes the exhaust line 510 connected with the exhaust duct 190 and a damper 520 .
  • the exhaust line 510 receives exhaust pressure from an exhaust pump (not illustrated) and is connected with a main exhaust line buried beneath the floor of a semiconductor manufacturing line.
  • the processing vessel 100 is combined with the lifting unit 600 that varies the vertical position of the processing vessel 100 .
  • the lifting unit 600 rectilinearly moves the processing vessel 100 in the vertical direction.
  • the height of the processing vessel 100 relative to the substrate support unit 200 is varied as the processing vessel 100 is vertically moved.
  • the lifting unit 600 includes a bracket 612 , a movable shaft 614 , and an actuator 616 .
  • the bracket 612 is fixedly attached to an outer wall of the processing vessel 100 .
  • the movable shaft 614 is fixedly combined with the bracket 612 and vertically moved by the actuator 616 .
  • the processing vessel 100 is lowered to allow the chuck stage 210 to further protrude beyond the processing vessel 100 .
  • the height of the processing vessel 100 is adjusted according to the types of treating fluids supplied onto the substrate W, to allow the treating fluids to be introduced into the preset recovery bowls 110 , 120 , and 130 , respectively.
  • the vertical position of the processing vessel 100 relative to the substrate W is varied.
  • the processing vessel 100 may vary the types of treating fluids and pollutant gases recovered into the respective recovery spaces RS 1 , RS 2 , and RS 3 .
  • the lifting unit 600 vertically moves the processing vessel 100 to vary the vertical position of the processing vessel 100 relative to the substrate support unit 200 .
  • the substrate support unit 200 may support the substrate W during the process.
  • the substrate support unit 200 may be rotated by an actuator 242 during the process.
  • the substrate support unit 200 includes the chuck stage 210 , a quartz window 220 , a rotary unit 230 , a back nozzle 240 , and the heating unit 250 .
  • the chuck stage 210 has a circular upper surface.
  • the chuck stage 210 is combined with and rotated by the rotary unit 230 .
  • the rotary unit 230 has a hollow shape.
  • the rotary unit 230 is combined with the chuck stage 210 and rotates the chuck stage 210 .
  • the quartz window 220 is located on the chuck stage 210 .
  • the quartz window 220 protects the heating unit 250 .
  • the quartz window 220 may be transparent.
  • the quartz window 220 may be rotated together with the chuck stage 210 .
  • the quartz window 220 includes support pins 224 .
  • the support pins 224 are arranged on a peripheral portion of an upper surface of the quartz window 220 with a predetermined interval therebetween.
  • the support pins 224 protrude upward from the quartz window 220 .
  • the support pins 224 support the backside of the substrate W to space the substrate W apart upward from the quartz window 220 .
  • Chucking pins 212 are located on the quartz window 220 .
  • the chucking pins 212 align the substrate W to locate the substrate W, which is supported by the plurality of support pins 224 , in a correct position. During the process, the chucking pins 212 make contact with the side of the substrate W to prevent the substrate W from deviating from the correct position.
  • the back nozzle 240 dispenses high-temperature deionized water onto the backside of the substrate W.
  • the heating unit 250 is mounted in the substrate support unit 200 .
  • the heating unit 250 heats the substrate W during a stripping process.
  • the heating unit 250 is installed at the top of the chuck stage 210 .
  • a plurality of heating units 250 may be provided.
  • the heating units 250 may have different diameters.
  • the heating units 250 may have a ring shape.
  • the heating units 250 may be implemented with a plurality of lamps 252 in a ring shape.
  • the lamps 252 may be controlled by temperature controllers (not illustrated), respectively.
  • the heating units 250 may be subdivided into a plurality of concentric sections.
  • the lamps 252 are provided in the sections to individually heat the sections, respectively.
  • the lamps 252 may be ring-shaped lamps concentrically arranged at different radii with respect to the center of the chuck stage 210 .
  • the lamp unit 900 raises the temperature of the surface of the substrate W (a photoresist film) in the process of treating the surface of the substrate W and irradiates light to the substrate W to enhance the reactivity with the ozone treatment fluid and activate OH radicals.
  • the lamp unit 900 may include a lamp 910 and a lamp actuator 920 for moving the lamp 910 above the substrate W.
  • the lamp 910 may be a lamp that irradiates ultraviolet light. However, without being limited thereto, the lamp 910 may include a lamp that irradiates infrared light, or may include two lamps that irradiate ultraviolet light and infrared light, respectively.
  • the treating fluid supply unit 300 dispenses, onto the substrate W, the ozone treatment fluid for removing unnecessary photoresist and an organic residue on the surface of the substrate W.
  • the ozone treatment fluid may be a fluid mixture that contains ozone and deionized water (DIW).
  • DIW deionized water
  • the ozone may be used in the state of being mixed with (dissolved in) the deionized water, and a nitrogen gas and a carbon dioxide gas may be added as catalytic gases when necessary.
  • FIG. 4 is a view illustrating a fluid supply unit
  • FIG. 5 is a sectional view illustrating a nozzle.
  • the treating fluid supply unit 300 may include a nozzle member 310 and the fluid supply unit 330 .
  • the nozzle member 310 includes the nozzle 320 , a nozzle arm 313 , a support rod 315 , and a nozzle actuator 317 .
  • the nozzle 320 is supplied with fluids through the fluid supply unit 330 .
  • the fluid supply unit 330 may include an ozone gas supply unit 332 for supplying an ozone gas used to remove the photoresist film on the substrate W and a deionized-water supply unit 334 for supplying deionized water used to remove the photoresist film on the substrate W.
  • the nozzle 320 dispenses the ozone treatment fluid onto the surface of the substrate W.
  • the nozzle arm 313 extends in one direction and is equipped with the nozzle 320 at the tip end thereof.
  • the nozzle arm 313 supports the nozzle 320 .
  • the nozzle arm 313 is equipped with the support rod 315 at a rear end thereof.
  • the support rod 315 is located on the bottom of the nozzle arm 313 .
  • the support rod 315 is arranged perpendicular to the nozzle arm 313 .
  • the nozzle actuator 317 is provided at a lower end of the support rod 315 .
  • the nozzle actuator 317 rotates the support rod 315 about the longitudinal axis of the support rod 315 .
  • the nozzle arm 313 and the nozzle 311 swing about the support rod 315 by the rotation of the support rod 315 .
  • the nozzle 320 may swing between outside and inside the processing vessel 100 during the stripping process. Further, the nozzle 320 may dispense the ozone treatment liquid while swinging between the center of the substrate W and the edge region thereof.
  • the nozzle 320 may include a mixing space 325 and a dispensing opening 329 .
  • the deionized water is supplied into the mixing space 325 .
  • the ozone gas supplied from the ozone gas supply unit 322 through an ozone inflow passage 326 is introduced into the mixing space 325 and brought into contact with the deionized water in the mixing space 325 .
  • the ozone gas is dissolved in the deionized water.
  • the high-concentration ozone water (the ozone treatment fluid) that is prepared in the mixing space 325 is dispensed onto the surface of the substrate W through the dispensing opening 329 .
  • the ozone may react with the unnecessary photoresist and the organic residue on the substrate W before decomposed, because the ozone treatment fluid is prepared in the nozzle 320 and dispensed onto the substrate W.
  • FIGS. 6 and 7 are views illustrating a stripping process in the substrate treating apparatus according to an embodiment of the inventive concept.
  • the stripping process may include a substrate loading step S 100 , a pre-wetting step S 200 , a stripping step S 300 , a rinsing/drying step S 400 , and a substrate unloading step S 500 .
  • a substrate is loaded onto the substrate support unit 200 .
  • deionized water is dispensed onto the rotating substrate to wet the surface of the substrate.
  • ozone steam is dispensed onto the surface of the rotating substrate.
  • the nozzle 320 dispenses the ozone steam to strip a photoresist film and an organic residue from the substrate, while swinging from the center of the substrate to the edge of the substrate, or while swinging from the edge of the substrate to the center of the substrate.
  • ultraviolet (UV) light may be irradiated to enhance activation of OH radicals of the ozone treatment fluid while the ozone treatment fluid is dispensed onto the surface of the substrate.
  • the surface of the substrate is rinsed by using a rinsing solution, and thereafter the substrate is dried by using a drying fluid.
  • the substrate may be heated to induce the activation of the OH radicals.
  • the substrate may be heated by a heater or by high-temperature deionized water dispensed onto the backside of the substrate by the back nozzle 240 .
  • a fluid supply unit 330 a may further include a nitrogen supply unit 335 and a carbon dioxide supply unit 336 , in addition to the ozone gas supply unit 332 and the deionized-water supply unit 334 .
  • a nitrogen gas and carbon dioxide may be supplied into the nozzle 320 through the ozone inflow passage 326 illustrated in FIG. 5 .
  • the nitrogen gas and the carbon dioxide are catalytic gases for maintaining the ozone concentration of the ozone treatment fluid at high concentration.
  • the nitrogen gas serves as a catalyst that increases the rate of decomposition of O 2 to O, and the carbon dioxide serves as an inhibitor that decreases the rate of decomposition of O 3 to O 2 .
  • FIG. 9 is a view illustrating a modified embodiment of the inventive concept.
  • the substrate treating apparatus 10 may include a first lamp unit 900 a having a first lamp 910 - 1 that irradiates ultraviolet light and a second lamp unit 900 b having a second lamp 910 - 2 that irradiates infrared light.
  • the first lamp 910 - 1 and the second lamp 910 - 2 may individually irradiate ultraviolet light and infrared light to a substrate in a stripping process.
  • the first lamp 910 - 1 and the second lamp 910 - 2 may be individually moved by lamp actuators (not illustrated) that are independent of each other.
  • a krypton-fluoride (KrF) photoresist contains a photo acid generator (PAG), a resin, an inhibitor, and a solvent.
  • the PAG is decomposed to H+ by ultraviolet (UV) light and discharged.
  • UV ultraviolet
  • H+ diffuses so that the resin becomes soluble in water, thereby improving stripping efficiency.
  • the infrared light when ultraviolet light and infrared light are irradiated to the substrate while an ozone treatment fluid is dispensed onto the substrate in the stripping process, the infrared light heats the substrate and improves the reactivity of the ozone water, and the ultraviolet light allows the PR to become soluble in water and enhances activation of OH radicals.
  • FIG. 10 is a view illustrating another modified embodiment of the inventive concept.
  • a lamp 910 - 3 of the lamp unit 900 b may be mounted on a lamp support 930 so as to be rotatable. Accordingly, the aiming direction of the lamp 910 - 3 may be adjusted such that light irradiated by the lamp 910 - 3 is directed toward the point onto which the nozzle 320 dispenses the ozone treatment fluid.
  • FIG. 11 is a view illustrating another modified embodiment of the inventive concept.
  • a lamp 910 - 9 may be installed on the nozzle arm 313 of the nozzle member 310 . That is, the lamp 910 - 9 may be disposed adjacent to the nozzle 320 and may irradiate light (infrared or ultraviolet light) to a substrate while moving together with the nozzle 320 in the same direction. Although not illustrated, a plurality of lamps may be mounted on the nozzle arm 313 .
  • the inventive concept may remove photoresist and an organic residue by using ozone water rather than sulfuric acid.
  • the ozone water after used, is decomposed into an ozone gas and water.
  • wastewater treatment cost is saved and environmental pollution is not caused.
  • the ozone water has lower PR stripping performance than the sulfuric acid, and therefore activation of OH radicals is required.
  • ultraviolet light and infrared light are irradiated to a substrate to contribute to the activation of the OH radicals.
  • the substrate treating apparatus and method uses an ozone gas rather than sulfuric acid, thereby saving wastewater treatment cost and not causing environmental pollution.
  • the substrate treating apparatus and method irradiates infrared light or ultraviolet light to ozone water dispensed onto a substrate, thereby improving efficiency in removing a photoresist film and an organic residue.
  • the substrate treating apparatus and method adds a nitrogen gas and carbon dioxide, as catalytic gases, to high-concentration ozone steam (or ozone water), thereby increasing the rate of decomposition of O 2 to O and decreasing the rate of decomposition of O 3 to O 2 , which in turn maintains the ozone at high concentration until the zone reaches the surface of a substrate.
  • the substrate treating apparatus and method prepares ozone steam in the dispensing nozzle and dispenses the ozone steam onto a substrate, thereby enabling the ozone to react with a photoresist film and an organic residue on a substrate before the ozone is decomposed.

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