US10985110B2 - Semiconductor package having an electromagnetic shielding structure and method for producing the same - Google Patents

Semiconductor package having an electromagnetic shielding structure and method for producing the same Download PDF

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US10985110B2
US10985110B2 US16/519,571 US201916519571A US10985110B2 US 10985110 B2 US10985110 B2 US 10985110B2 US 201916519571 A US201916519571 A US 201916519571A US 10985110 B2 US10985110 B2 US 10985110B2
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electrically conductive
semiconductor package
carrier substrate
double
conductive layer
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US20200035616A1 (en
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Juergen Hoegerl
Ordwin Haase
Tobias Kist
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Infineon Technologies AG
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Infineon Technologies AG
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    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49503—Lead-frames or other flat leads characterised by the die pad
    • H01L23/49506—Lead-frames or other flat leads characterised by the die pad an insulative substrate being used as a diepad, e.g. ceramic, plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1027—IV
    • H01L2924/10272—Silicon Carbide [SiC]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H01L2924/141—Analog devices
    • H01L2924/1425—Converter
    • H01L2924/14252—Voltage converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Definitions

  • the present disclosure relates to a semiconductor package having a double-sided cooling structure, which semiconductor package has an electromagnetic shielding structure.
  • the present disclosure furthermore relates to a method for producing a semiconductor package having a double-sided cooling structure and an electromagnetic shielding structure.
  • Such circuits can have inverters, for example, which convert a battery voltage into an AC voltage for the drive of an electric motor.
  • Such an inverter can be realized by a suitable circuit in a semiconductor package, wherein, with regard to the performance of the inverter, it is crucial to achieve sufficient cooling, the lowest possible impedance, the lowest possible leakage inductances, etc. in the semiconductor package.
  • the performance of such inverters can be increased further by means of improved semiconductor packages and/or by means of improved methods for producing such semiconductor packages.
  • a semiconductor package having a double-sided cooling structure comprising an upper electrically conductive element having an outwardly exposed metal surface, a lower carrier substrate having an upper electrically conductive layer, a lower electrically conductive layer having an outwardly exposed surface, and an electrical insulation layer arranged between the upper and lower electrically conductive layers, a first electrically conductive spacer arranged between the upper electrically conductive element and the upper electrically conductive layer, at least one power semiconductor chip arranged between the upper electrically conductive element and the upper electrically conductive layer, a second electrically conductive spacer arranged between the upper electrically conductive element and the power semiconductor chip, and a shielding structure configured to electromagnetically shield a line of the semiconductor package.
  • Individual examples relate to a method for producing a semiconductor package having a double-sided cooling structure, the method comprising providing a lower carrier substrate having an upper electrically conductive layer, a lower electrically conductive layer and an electrical insulation layer arranged between the upper and lower electrically conductive layers, applying a first electrically conductive spacer to the upper electrically conductive layer of the lower carrier substrate, applying at least one power semiconductor chip to the upper electrically conductive layer of the lower carrier substrate, applying a second electrically conductive spacer to the power semiconductor chip, applying an upper electrically conductive element on the spacers opposite the lower carrier substrate, and forming a shielding structure in such a way that a line of the semiconductor package is electromagnetically shielded by the shielding structure.
  • FIG. 1A illustrates a side view of a semiconductor package having a double-sided cooling structure.
  • FIG. 1B illustrates a side view of a further semiconductor package having a double-sided cooling structure.
  • FIG. 2 illustrates a perspective view of a semiconductor package having a double-sided cooling structure, which furthermore comprises an encapsulation body.
  • FIG. 3A illustrates a perspective view of a lower carrier substrate of a further semiconductor package.
  • FIG. 3B illustrates the upper cooling structure in perspective view.
  • FIG. 3C illustrates the assembled semiconductor package in perspective view.
  • FIG. 3D illustrates a side view of the semiconductor package.
  • FIG. 4 illustrates a flow diagram of a method for producing a semiconductor package.
  • FIG. 5 illustrates one example of a semiconductor package having a shielding structure arranged between two signal lines.
  • Coupled In the present description, the expressions “coupled”, “electrically coupled” and/or “electrically connected” are not intended to mean that the elements must be directly coupled; intervening elements can be provided between the “coupled” or “electrically coupled” elements, e.g. solder layers.
  • FIG. 1A shows a semiconductor package 100 having a double-sided cooling structure in accordance with the disclosure.
  • double-sided cooling structure means that the semiconductor package 100 has an upper electrically conductive element 110 and a lower carrier substrate 120 , which can each act as a cooling structure of the semiconductor package 100 .
  • the semiconductor package 100 furthermore has a first electrically conductive spacer 130 , at least one power semiconductor chip 140 and a second electrically conductive spacer 150 .
  • the second electrically conductive spacer 150 is arranged between the upper electrically conductive element 110 and the power semiconductor chip 140 .
  • the lower carrier substrate 120 has an upper electrically conductive layer 121 , a lower electrically conductive layer 123 and an electrical insulation layer 122 arranged between the upper 121 and lower 123 conductive layer.
  • the lower carrier substrate 120 can be e.g. a substrate of the DCB (direct copper bond), DAB (direct aluminum bond), or AMB (active metal brazing) type.
  • the semiconductor package 100 can furthermore have an encapsulation body (not shown), which encapsulates the spacers 130 , 150 , the at least one power semiconductor chip 140 , the upper electrically conductive element 110 and the lower carrier substrate 120 .
  • an interspace between the upper electrically conductive element 110 and the lower carrier substrate 120 can be wholly or partly filled by the encapsulation body.
  • a metal surface 111 of the upper electrically conductive element 110 and a surface 124 of the lower electrically conductive layer 123 are embodied at all events such that they are wholly or at least partly outwardly exposed (that is to say that the surfaces 111 , 124 constitute outer surfaces of the semiconductor package 100 ).
  • the encapsulation body can comprise or consist of a potting compound or molding compound.
  • the encapsulation body can be produced e.g. by means of compression molding.
  • a dielectric compound can be injected, and the dielectric compound can be cured to form the encapsulation body.
  • the electrically conductive spacers 130 , 150 can consist of a metal or a metal alloy and can comprise or consist of e.g. Al or Cu.
  • the first electrically conductive spacer 130 is physically and electrically connected to the upper electrically conductive element 110 and the lower carrier substrate 120 , e.g. by means of solder connections or by means of electrically conductive adhesive.
  • the at least one power semiconductor chip 140 comprises or consists of SiC.
  • the at least one power semiconductor chip 140 is a chip of the IGBT (insulated-gate bipolar transistor) type.
  • a half-bridge circuit is realized in the semiconductor package 100 .
  • the half-bridge circuit can have a power terminal for a positive supply voltage (V DD ), a power terminal for a negative supply voltage (V SS ) and a power terminal configured as a phase.
  • the second electrically conductive spacer 150 can be electrically connected to an electrode (not shown) of the power semiconductor chip 140 and to the upper electrically conductive element 110 , e.g. by means of solder connections or by means of electrically conductive adhesive.
  • the electrode can be a power electrode or a control electrode of the power semiconductor chip 140 .
  • the second electrically conductive spacer 150 can wholly or partly cover the power semiconductor chip 140 .
  • the semiconductor package can have external terminals in the form of terminal fingers. At least one portion of said external terminals can be designed to electrically connect electrodes of the at least one power semiconductor chip 140 to the outside world.
  • the external terminals can be electrically connected to the upper electrically conductive element 110 and/or to the upper electrically conductive layer 121 .
  • the terminal fingers can be parts of a leadframe.
  • Individual terminals from among the external terminals can be power terminals, which can be electrically connected e.g. to respective power electrodes of the at least one power semiconductor chip 140 .
  • One or a plurality of the external terminals can be control terminals, which are electrically connected to a control electrode (e.g. a gate electrode) of the at last one power semiconductor chip 140 .
  • Individual terminals from among the external terminals can be measurement terminals, which are designed e.g. to measure V DD , V SS , the voltage of the phase, a current flow or a temperature in the semiconductor package 100 .
  • a shielding structure is arranged in the semiconductor package 100 , said shielding structure being configured to electromagnetically shield one or more lines of the semiconductor package 100 .
  • the electromagnetic shielding can serve to prevent the electrical switching behavior of the electrical circuit formed in the semiconductor package 100 from being disturbed electromagnetically from outside.
  • the electromagnetic shielding can also serve to prevent the electrical circuit formed in the semiconductor package 100 from inducing, for its part, a disturbance in another component part by means of electromagnetic influencing.
  • Said lines to be shielded can comprise e.g. one or more control terminals and/or one or more measurement terminals.
  • the shielding structure can be formed in the upper electrically conductive layer 121 and/or in the upper electrically conductive element 110 and/or in the leadframe.
  • the shielding structure can be designed to be at V SS or at V DD .
  • a shielding structure that is at V SS or V DD can be designed as a low-impedance shielding of the phase. This can at least partly prevent the phase from effecting electromagnetic emission toward the outside and acting as an interference source for other component parts.
  • control lines can function like antennas and, without electromagnetic shielding, would couple power into the surroundings and/or take up power from the surroundings. Taking up power from the surroundings could result in the control signals being disturbed and the switching behavior of the electrical circuit being adversely influenced.
  • a corresponding shielding can contribute to ensuring fault-free switching of the at least one power semiconductor chip 140 . This analogously also applies to other types of lines in the semiconductor package 100 .
  • the semiconductor package 100 can comprise a control line formed in the upper electrically conductive layer 121 , said control line being electrically connected to a control electrode of the at least one power semiconductor chip and to a control terminal.
  • the shielding structure can surround the control line and the control terminal connected thereto at at least two sides.
  • FIG. 1B shows a semiconductor package 100 _ 1 , which can correspond to the semiconductor package 100 from FIG. 1A apart from the differences described below.
  • the upper electrically conductive element 110 has an upper carrier substrate 160 having an upper electrically conductive layer 161 , a lower electrically conductive layer 163 and an electrical insulation layer 162 arranged between the upper 161 and lower 163 electrically conductive layer.
  • the upper electrically conductive layer 161 corresponds to the outwardly exposed metal surface 111 .
  • the semiconductor package 100 _ 1 can furthermore have external terminals 170 , which, as shown in FIG. 1B , are arranged between the upper carrier substrate 160 and the lower carrier substrate 120 .
  • each individual one of the external terminals 170 can be electrically connected to the lower electrically conductive layer 163 of the upper carrier substrate 160 or to the upper electrically conductive layer 121 of the lower carrier substrate 120 .
  • the lower electrically conductive layer 163 of the upper carrier substrate 160 and the upper electrically conductive layer 121 of the lower carrier substrate 120 are structured and can have e.g. chip islands, conduction tracks and/or application locations for the electrically conductive spacers 130 , 150 .
  • FIG. 2 shows a perspective view of a semiconductor package 200 , which can be identical to the semiconductor packages 100 and 100 _ 1 .
  • the semiconductor package 200 has an encapsulation body 210 , which encapsulates the spacers 130 , 150 , the upper electrically conductive element 110 , the lower carrier substrate 120 and the at least one power semiconductor chip 140 .
  • the surfaces 111 and the surface 124 are exposed at the encapsulation body 210 at opposite sides of the semiconductor package 200 .
  • the encapsulation body 210 consists of a suitable electrically insulating material or comprises such a material, e.g. a plastic, a polymer or a resin.
  • the encapsulation body 210 can be e.g. a molded body.
  • the surface 111 and/or the surface 124 can have an electrically insulating coating and can be configured in each case for the application of a heat sink.
  • the semiconductor package 200 has external terminals 220 , 230 arranged at side surfaces of the semiconductor package 200 which connect the opposite sides to the metal surface 111 and the surface 124 .
  • the external terminals 220 can be designed as power terminals and the external terminals 230 can be designed as control terminals or measurement terminals.
  • the power terminals are arranged only at one side of the semiconductor package and the control and/or measurement terminals are arranged only at an opposite side.
  • a power terminal configured as a phase is arranged at the side having the control or measurement terminals.
  • the external terminals 220 and 230 can be parts of a common leadframe.
  • FIG. 3A shows a perspective view of a lower carrier substrate 120 of a semiconductor package 300 .
  • the semiconductor package 300 can be identical to the semiconductor packages 100 , 100 _ 1 and 200 .
  • the upper electrically conductive layer 121 of the semiconductor package 300 can have a first structured region 310 , a second structured region 320 , a third structured region 330 , fourth structured regions 340 and fifth structured regions 350 .
  • First power semiconductor chips 311 can be arranged on the first region 310 and be electrically connected thereto.
  • a power electrode e.g. a drain electrode
  • the first region 310 can be designed for applying V DD .
  • the first region 310 can be electrically connected to a first power terminal 312 .
  • the first power semiconductor chips 311 can be embodied as high-side power semiconductor chips of a half-bridge circuit set up in the semiconductor package 300 .
  • Second power semiconductor chips 331 can be arranged on the third region 330 and be electrically connected thereto.
  • a power electrode e.g. a drain electrode
  • the third region 330 can be designed as a phase of the half-bridge circuit.
  • the third region 330 can be electrically connected to a third power terminal 332 .
  • the second power semiconductor chips 331 can be embodied as low-side power semiconductor chips of the half-bridge circuit.
  • the third region 330 can be electrically connected to the upper carrier substrate 160 , e.g. via an electrically conductive spacer 130 .
  • the second region 320 can be arranged between the first region 310 and the third region 330 on the lower carrier substrate 120 .
  • the second region 320 can be electrically connected to a second power terminal 322 and can be designed for applying V SS .
  • the second region 320 can be electrically connected to the upper carrier substrate 160 , e.g. via an electrically conductive spacer 130 .
  • the fourth regions 340 can be electrically connected to the upper carrier substrate 160 , e.g. via electrically conductive spacers 130 , and they can be designed for applying the phase.
  • the fifth regions 350 can be electrically connected to the upper carrier substrate 160 , e.g. via electrically conductive spacers 130 , and they can be designed for applying V SS .
  • the upper electrically conductive layer 121 of the semiconductor package 300 can furthermore have a first control line 361 and a second control line 362 .
  • the first control line 361 can be at least partly surrounded by the first region 310 on two sides and the second control line can be at least partly surrounded by the third region 330 on two sides.
  • Control electrodes, e.g. gate electrodes, of the first power semiconductor chips 311 can be electrically connected to the first control line 361 , e.g. by means of bond wires.
  • Control electrodes, e.g. gate electrodes, of the second power semiconductor chips 331 can be electrically connected to the second control line 362 , e.g. by means of bond wires.
  • the first and second control lines 361 , 362 can each have an elongate shape, that is to say that a length of the control lines 361 , 362 can be significantly greater than the width thereof, e.g. more than 10 times greater or more than 15 times or more than 20 times greater.
  • the control lines 361 , 362 can extend at a first side 301 of the lower carrier substrate 120 as far as the edge or almost as far as the edge of the lower carrier substrate 120 .
  • the first control line 361 can be electrically connected to a first control terminal 363 at the first side 301 and the second control line 362 can be electrically connected to a second control terminal 364 at the first side 301 .
  • the first and second control terminals 363 , 364 can each comprise a terminal finger.
  • the first control terminal 363 and respectively the second control terminal 364 are surrounded on the left and right by a first part of the shielding structure.
  • Said first part of the shielding structure can e.g. be in the form of terminal fingers 341 and 351 .
  • the terminal fingers 341 are electrically connected to the fourth region 340 and the terminal fingers 351 are electrically connected to the fifth region.
  • the first part of the shielding structure has more than only one terminal finger 341 and 351 on the left and right of the first control terminal 363 and the second control terminal 364 , respectively, e.g. in each case two terminal fingers 341 and 351 , respectively, on the left and right.
  • the further terminal fingers 341 and 351 are likewise electrically connected to the fourth regions 340 and the fifth regions 350 , respectively.
  • the use of more than one terminal finger on the left and right can contribute to further improvement of the electromagnetic shielding by the shielding structure.
  • the first region 310 can be a third part of the shielding structure, said third part being formed in the upper electrically conductive layer 121 .
  • the fourth regions 340 can likewise be parts of said third part of the shielding structure for the first control line 361 .
  • the third region 330 can be a third part of the shielding structure, said third part being formed in the upper electrically conductive layer 121 .
  • the fifth regions 350 can likewise be parts of said third part of the shielding structure for the second control line 362 .
  • the semiconductor package 300 furthermore comprises a measurement terminal 313 , which is electrically connected to the first region 310 and is designed for measuring V DD .
  • the control terminals 363 and 364 , the terminal fingers 341 and 351 and the measurement terminal 313 can all be arranged at the first side 301 of the lower carrier substrate 120 , and the power terminals 312 , 322 and 332 can all be arranged at an opposite second side 302 .
  • the control terminals 363 and 364 , the terminal fingers 341 and 351 , the measurement terminal 313 and the power terminals 312 , 322 and 332 can all be part of a leadframe.
  • FIG. 3B shows a perspective view of an upper carrier substrate 160 of the semiconductor package 300 , wherein FIG. 3B shows a perspective view of the underside of the upper carrier substrate 160 (cf. the arrow in FIG. 3C for the viewing direction).
  • the lower electrically conductive layer 163 of the upper carrier substrate 160 is structured and has a sixth region 370 and a seventh region 380 .
  • the sixth region 370 overlaps the first region 310 of the lower carrier substrate 120 .
  • the seventh region 380 overlaps the second region 320 and the third region 330 of the lower carrier substrate 120 .
  • a first area 371 is arranged in the sixth region 370 , said first area being completely filled with the lower electrically conductive layer 163 .
  • a second area 381 is arranged in the seventh region 380 , said second area being completely filled with the lower electrically conductive layer 163 .
  • the first area 371 covers the first control line 361 and the second area 381 covers the second control line 381 .
  • the first area 311 is a second part of the shielding structure for the first control line 361 and is electrically connected to the fourth regions 340 and the terminal fingers 341 .
  • the second area 381 is a second part of the shielding structure for the second control line 362 and is electrically connected to the fifth regions 350 and the terminal fingers 351 .
  • the first control line 361 and respectively the second control line 362 can be surrounded by the respective shielding structure on at least three sides.
  • the terminal fingers 341 are configured as a first part of the shielding structure for electromagnetically shielding the control terminal 363
  • the area 371 and the regions 310 , 340 are configured as a second and respectively a third part of the shielding structure for electromagnetically shielding the control line 361
  • the terminal fingers 351 are configured as a first part of the shielding structure for electromagnetically shielding the control terminal 364
  • the area 381 and the regions 330 , 350 are configured as a second and respectively a third part of the shielding structure for electromagnetically shielding the control line 362 .
  • Cutouts 372 , 382 can be provided in the sixth region 370 and in the seventh region 380 , said cutouts bounding connection points at which the lower electrically conductive layer 163 of the upper carrier substrate 160 is applied to electrically conductive spacers 130 , 150 (cf. FIG. 1A ).
  • the first area 371 and the second area 381 are free of such cutouts 372 , 382 .
  • FIG. 3C shows the semiconductor package 300 after the arrangement of the upper carrier substrate 160 above the lower carrier substrate 120 from FIG. 3A .
  • FIG. 3C shows only the lower conductive layer 163 of the upper carrier substrate 160 ; the upper electrically conductive layer 161 and the insulation layer 162 have been omitted.
  • the sixth region 370 can wholly or partly cover the first region 310 and the fourth regions 340
  • the seventh region 380 can wholly or partly cover the second region 320 , the third region 330 and the fifth regions 350 .
  • the sixth region 370 can be electrically connected to the third region 330 and to the fourth regions 340 by means of electrically conductive spacers
  • the seventh region 380 can be electrically connected to the second region 320 and to the fifth regions 350 by means of electrically conductive spacers.
  • FIG. 3D shows a side view of the semiconductor package 300 along the direction of the arrow in FIG. 3C .
  • FIG. 4 shows a flow diagram of a method 400 for producing a semiconductor package having a double-sided cooling structure.
  • the semiconductor packages 100 , 100 _ 1 , 200 and 300 can be produced.
  • the method 400 comprises, at 401 , providing a lower carrier substrate having an upper electrically conductive layer, a lower electrically conductive layer and an electrical insulation layer arranged between the upper and lower electrically conductive layers.
  • the method 400 comprises, at 402 , applying a first electrically conductive spacer to the upper electrically conductive layer of the lower carrier substrate.
  • the method 400 comprises, at 403 , applying at least one power semiconductor chip to the upper electrically conductive layer of the lower carrier substrate.
  • the method 400 comprises, at 404 , applying a second electrically conductive spacer to the power semiconductor chip.
  • the method 400 comprises, at 405 , applying an upper electrically conductive element on the spacers opposite the lower carrier substrate.
  • the method 400 comprises, at 406 , forming a shielding structure in such a way that a control terminal or a measurement terminal of the semiconductor package is electromagnetically shielded by the shielding structure.
  • the method 400 can furthermore comprise arranging a second and a third terminal finger on both sides alongside a first terminal finger of the control terminal of the semiconductor package for forming a first part of the shielding structure.
  • the method 400 can furthermore comprise forming a control line in the upper electrically conductive layer of the lower carrier substrate, wherein the control line electrically connects a control electrode of the at least one power semiconductor chip to the control terminal, and wherein the control line is surrounded by the shielding structure at least at three sides.
  • the method 400 can furthermore comprise etching the upper electrically conductive element in order to produce a second part of the shielding structure, wherein the second part of the shielding structure overlaps the control line.
  • the method 400 can furthermore comprise etching the upper electrically conductive layer of the lower carrier substrate in order to produce a third part of the shielding structure, wherein the third part surrounds the control line on both sides.
  • FIG. 5 shows a further example of a semiconductor package 500 , wherein the semiconductor package 500 can be similar to the semiconductor packages 100 , 100 _ 1 , 200 and 300 and have, in comparison therewith, only the differences shown below.
  • the upper carrier substrate and a possible encapsulation body of the semiconductor package 500 are not shown in FIG. 5 .
  • the lower carrier substrate 501 of the semiconductor package 500 has a first carrier region 510 with first power semiconductor chips 511 and a second carrier region 520 with second power semiconductor chips 521 .
  • the first carrier region 510 can be designed e.g. for applying V DD and the second carrier region 520 can be designed e.g. as a phase.
  • the first carrier region 510 can be connected to a first power terminal 512 and a second power terminal 513 .
  • a third power terminal 530 can be arranged between the first and second power terminals 512 , 513 .
  • the third power terminal 530 can be connected to the upper carrier substrate of the semiconductor package 500 and can be a V SS terminal.
  • the second carrier region 520 can be connected to a fourth power terminal 522 .
  • Control electrodes (e.g. gate electrodes) of the first power semiconductor chips 511 can be connected to a first control line 541
  • control electrodes (e.g. gate electrodes) of the second power semiconductor chips 521 can be connected to a second control line 542 .
  • a shielding structure 550 is formed between the first control line 541 and the second control line 542 , said shielding structure electromagnetically shielding the control lines 541 , 542 , in particular from one another.
  • the control lines 541 , 542 and the shielding structure 550 can be formed as structured regions in the upper electrically conductive layer of the lower carrier substrate 501 .
  • the shielding structure 550 is electrically connected to the upper carrier substrate of the semiconductor package 500 , e.g. via one or more electrically conductive spacers.
  • the shielding structure 550 can be configured in particular for applying V SS .

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016112289B4 (de) * 2016-07-05 2020-07-30 Danfoss Silicon Power Gmbh Leiterrahmen und Verfahren zur Herstellung desselben
US20230326827A1 (en) * 2020-07-02 2023-10-12 Amosense Co., Ltd. Power module, and method for manufacturing same
US11862688B2 (en) 2021-07-28 2024-01-02 Apple Inc. Integrated GaN power module
TWI787111B (zh) * 2022-04-08 2022-12-11 強茂股份有限公司 具複合式針腳結構的封裝元件及其製法

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070090814A1 (en) 2005-10-24 2007-04-26 Takayuki Hashimoto Semiconductor device and power supply device using the same
US8358000B2 (en) 2009-03-13 2013-01-22 General Electric Company Double side cooled power module with power overlay
US8654554B2 (en) 2011-07-14 2014-02-18 Honda Motor Co., Ltd. Semiconductor device
DE102014209690A1 (de) 2014-05-21 2015-11-26 Robert Bosch Gmbh Kommutierungszelle
DE112014004147T5 (de) 2013-09-10 2016-07-07 Denso Corporation Energieumwandlungsvorrichtung
US20170287875A1 (en) 2016-03-29 2017-10-05 Hong Kong Applied Science And Technology Research Institute Co. Ltd. Three dimensional fully molded power electronics module having a plurality of spacers for high power applications
DE102016115221A1 (de) 2016-08-17 2018-02-22 Karlsruher Institut für Technologie Verfahren zum Verbinden von mindestens zwei Substraten zur Bildung eines Moduls
US20180102302A1 (en) 2016-10-12 2018-04-12 Infineon Technologies Ag Chip carrier with electrically conductive layer extending beyond thermally conductive dielectric sheet
US20180145007A1 (en) 2016-11-21 2018-05-24 Rohm Co., Ltd. Power module and fabrication method of the same, graphite plate, and power supply equipment
US10002821B1 (en) 2017-09-29 2018-06-19 Infineon Technologies Ag Semiconductor chip package comprising semiconductor chip and leadframe disposed between two substrates
US10128165B2 (en) 2016-10-31 2018-11-13 Infineon Technologies Ag Package with vertically spaced partially encapsulated contact structures
US10348214B2 (en) 2008-10-31 2019-07-09 Hitachi Automotive Systems, Ltd. Power module, power converter device, and electrically powered vehicle
US20200286865A1 (en) 2019-03-06 2020-09-10 Semiconductor Components Industries, Llc Semiconductor Package and Related Methods

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6853072B2 (en) * 2002-04-17 2005-02-08 Sanyo Electric Co., Ltd. Semiconductor switching circuit device and manufacturing method thereof
CN1755929B (zh) * 2004-09-28 2010-08-18 飞思卡尔半导体（中国）有限公司 形成半导体封装及其结构的方法
JP2009246116A (ja) * 2008-03-31 2009-10-22 Yamaha Corp リードフレーム及びパッケージ本体、パッケージ、半導体装置、並びにマイクロフォンパッケージ
CN201946588U (zh) * 2010-12-30 2011-08-24 比亚迪股份有限公司 一种功率半导体器件的封装结构
US8643176B2 (en) * 2011-07-27 2014-02-04 Infineon Technologies Ag Power semiconductor chip having two metal layers on one face
US8704341B2 (en) * 2012-05-15 2014-04-22 Advanced Semiconductor Engineering, Inc. Semiconductor packages with thermal dissipation structures and EMI shielding
EP3168871B1 (de) * 2015-11-11 2020-01-08 Nexperia B.V. Halbleiterbauelement und ein verfahren zur herstellung eines halbleiterbauelements

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070090814A1 (en) 2005-10-24 2007-04-26 Takayuki Hashimoto Semiconductor device and power supply device using the same
US10348214B2 (en) 2008-10-31 2019-07-09 Hitachi Automotive Systems, Ltd. Power module, power converter device, and electrically powered vehicle
US8358000B2 (en) 2009-03-13 2013-01-22 General Electric Company Double side cooled power module with power overlay
US8654554B2 (en) 2011-07-14 2014-02-18 Honda Motor Co., Ltd. Semiconductor device
DE112014004147T5 (de) 2013-09-10 2016-07-07 Denso Corporation Energieumwandlungsvorrichtung
DE102014209690A1 (de) 2014-05-21 2015-11-26 Robert Bosch Gmbh Kommutierungszelle
US20170287875A1 (en) 2016-03-29 2017-10-05 Hong Kong Applied Science And Technology Research Institute Co. Ltd. Three dimensional fully molded power electronics module having a plurality of spacers for high power applications
DE102016115221A1 (de) 2016-08-17 2018-02-22 Karlsruher Institut für Technologie Verfahren zum Verbinden von mindestens zwei Substraten zur Bildung eines Moduls
DE102016119485A1 (de) 2016-10-12 2018-04-12 Infineon Technologies Ag Chipträger mit elektrisch leitfähiger Schicht, die sich über eine wärmeleitfähige dielektrische Sheet-Struktur hinaus erstreckt
US20180102302A1 (en) 2016-10-12 2018-04-12 Infineon Technologies Ag Chip carrier with electrically conductive layer extending beyond thermally conductive dielectric sheet
US10128165B2 (en) 2016-10-31 2018-11-13 Infineon Technologies Ag Package with vertically spaced partially encapsulated contact structures
US20180145007A1 (en) 2016-11-21 2018-05-24 Rohm Co., Ltd. Power module and fabrication method of the same, graphite plate, and power supply equipment
US10002821B1 (en) 2017-09-29 2018-06-19 Infineon Technologies Ag Semiconductor chip package comprising semiconductor chip and leadframe disposed between two substrates
US20200286865A1 (en) 2019-03-06 2020-09-10 Semiconductor Components Industries, Llc Semiconductor Package and Related Methods

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