US10635005B2 - Exposure apparatus, method thereof, and method of manufacturing article - Google Patents

Exposure apparatus, method thereof, and method of manufacturing article Download PDF

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US10635005B2
US10635005B2 US16/274,569 US201916274569A US10635005B2 US 10635005 B2 US10635005 B2 US 10635005B2 US 201916274569 A US201916274569 A US 201916274569A US 10635005 B2 US10635005 B2 US 10635005B2
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substrate
stage
optical axis
axis direction
correction
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US20190265599A1 (en
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Mitsuhide Nishimura
Masatoshi Endo
Junichi Motojima
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Canon Inc
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Canon Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7026—Focusing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7034—Leveling

Definitions

  • the present invention relates to an exposure apparatus, a method thereof, and a method of manufacturing an article.
  • an exposure apparatus that transfers a mask pattern to a substrate.
  • the surface of the substrate needs to be arranged accurately on an imaging plane (focus plane) of a projection optical system so a mask pattern will overlap a shot region on the substrate with high accuracy.
  • Japanese Patent Laid-Open No. 2015-130407 proposes, for a scan exposure apparatus that performs an exposure process by scanning a substrate, a method of correcting the misalignment of the substrate surface that has been caused by a manufacturing error of a control system, a measurement error of a measurement device, a control error of the control system, or the like.
  • Japanese Patent Laid-Open No. 2004-111995 proposes, for an exposure apparatus employing a step-and-repeat method, a method of correcting the misalignment of the substrate surface in a direction (Z direction) parallel to an optical axis of a projection optical system which is caused by driving a substrate stage in a direction perpendicular (X-Y direction) to the optical axis.
  • Japanese Patent Laid-Open No. 2000-208391 proposes, for an exposure apparatus employing the step-and-repeat method, a method of performing focus measurement accurately before the exposure region is reached.
  • a focusing operation of arranging a substrate surface on a focus plane is performed by feedback control to increase the accuracy.
  • increasing the speed of the focusing operation is an important requirement for improving throughput.
  • measurement errors can increase since the focus measurement will be performed in a state in which a deviation of the substrate stage is left with respect to a target position. Hence, a more effective correction is required.
  • the present invention provides, for example, an exposure apparatus advantageous in improving focus accuracy.
  • the present invention in its one aspect provides an exposure apparatus that exposes a substrate, comprising a stage configured to hold and move the substrate, and a controller configured to control focus driving of the stage based on a measurement value and a correction value obtained for the focus driving of the stage for a shot region on the substrate, wherein the controller is configured to determine the correction value in accordance with an angle of view at a time of exposure.
  • FIG. 1 is a view showing the arrangement of an exposure apparatus according to an embodiment
  • FIG. 2 is a view showing an example of measurement points arranged on a target exposure region
  • FIG. 3 is a flowchart of focus correction formula calculation processing according to the embodiment.
  • FIG. 4 is a flowchart of processing for determining an exposure angle of view
  • FIG. 5 is a view showing an example of shot layouts obtained from different angles of view
  • FIG. 6 is a flowchart illustrating correction formula calculation processing
  • FIG. 7 is a flowchart illustrating an exposure process
  • FIG. 8 is a flowchart illustrating the correction formula calculation processing in the exposure process
  • FIG. 9 is a view showing a display example of a correction formula result for each angle of view.
  • FIG. 10 is a graph for explaining an effect of the embodiment.
  • FIG. 1 is a view showing the arrangement of a reduction projection exposure apparatus which employs a step-and-repeat method according to the embodiment.
  • a projection optical system 1 reduces and projects a circuit pattern of a reticle (not shown) and forms a circuit pattern image on a focal plane.
  • an optical axis AX of the projection optical system 1 in a parallel relationship with a Z-axis direction in FIG. 1 .
  • a plurality of exposure target regions (shot regions) on which a photoresist has been applied and the same pattern has been formed by a preceding exposure process are arranged on a substrate 2 .
  • a substrate stage 3 that holds the substrate 2 includes an X stage that moves in an X-axis direction perpendicular to a Z-axis, a Y stage that moves in a Y-axis direction perpendicular to the Z-axis and an X-axis, and a Z stage that moves in a Z-axis direction and rotates about a shaft parallel to the X-, Y-, and Z-axes directions.
  • the surface position of the substrate 2 can be adjusted in the direction of the optical axis AX of the projection optical system 1 and in a direction along a plane perpendicular to the optical axis AX, and a tilt with respect to a focal plane, that is, a circuit pattern image can also be adjusted.
  • Reference numerals 4 to 11 denote elements of a detection optical system provided to detect the position and the tilt of the substrate 2 .
  • Reference numeral 4 denotes an illumination light source with high luminance such a light-emitting diode, a semiconductor laser, or the like
  • reference numeral 5 denotes an illumination lens.
  • Light emitted from the illumination light source 4 is converted into a parallel light beam by the illumination lens 5 , is converted into a plurality of light beams via a mask 6 , enters a bending mirror 8 via an imaging lens 7 , and enters the surface of the substrate 2 after its direction is changed by the bending mirror 8 . That is, the imaging lens 7 and the bending mirror 8 form a plurality of pinhole images of the mask 6 on the substrate 2 .
  • the light beams that have passed through this plurality of pinholes irradiate five measurement points 71 , 72 , 73 , 74 , and 75 including the center (a position corresponding to the optical axis AX) of a target exposure region 100 of the substrate 2 , and the light beams are reflected at the respective points.
  • the measurement point 71 is at the center of target exposure region 100 which intersects with the optical axis AX, and the other measurement points 72 , 73 , 74 , and 75 are positioned at equal intervals away from the measurement point 71 as the center.
  • the direction of each of the light beams reflected by the five measurement points 71 , 72 , 73 , 74 , and 75 in the target exposure region 100 is changed by a bending mirror 9 , and the light beams subsequently enter a position sensitive detector 11 , on which elements are two-dimensionally arranged, via the detection lens 10 .
  • the imaging lens 7 , the bending mirror 8 , the substrate 2 , the bending mirror 9 , and the detection lens 10 form pinhole images of the mask 6 on the position sensitive detector 11 . Therefore, the mask 6 , the substrate 2 , and the position sensitive detector 11 are at positions which are optically conjugate to each other.
  • the position sensitive detector 11 is shown schematically in FIG. 1 , a plurality of the position sensitive detector 11 may be arranged in correspondence with the pinholes in a case in which it is difficult to implement an optical arrangement such as that shown in FIG. 1 .
  • the position sensitive detector 11 is formed from a two-dimensional CCD or the like, and is capable of separately detecting the positions of the plurality of light beams incident, via the plurality of pinholes, on the light receiving surface of the position sensitive detector 11 .
  • the positional changes of the substrate 2 in the optical axis AX with respect to the projection optical system 1 can be detected as shifts in the incident positions of the plurality of light beams on the position sensitive detector 11 .
  • the pieces of optical axis AX direction positional information of the surface of the substrate 2 obtained from the five measurement points 71 to 75 in the target exposure region 100 of the substrate 2 are input as output signals from the position sensitive detector 11 to a control device 13 via a surface position detection device 14 .
  • the displacement of the substrate stage 3 in the X-axis direction and the Y-axis direction can be measured by a known method by using a reference mirror 15 and a laser interferometer 17 arranged on the substrate stage 3 .
  • a signal indicating the displacement amount of the substrate stage 3 is input from the laser interferometer 17 to the control device 13 via a signal line.
  • a stage driving device 12 controls the movement of the substrate stage 3 .
  • the stage driving device 12 receives an instruction signal from the control device 13 via a signal line and drives the substrate stage 3 by servo drive in response to this signal.
  • the stage driving device 12 includes a first driving unit and a second driving unit.
  • the first driving unit adjusts positions x and y and a rotation ⁇ in a surface perpendicular to the optical axis AX of the substrate 2
  • the second driving unit adjusts a position z, a tilt ⁇ , and a tilt ⁇ related to the optical axis AX direction (Z direction) of the substrate 2
  • the surface position detection device 14 detects the surface position of the substrate 2 based on each output signal (surface position data) from the position sensitive detector 11 and transfers the detection result to the control device 13 .
  • the control device 13 Based on the detection result obtained by the surface position detection device 14 , the control device 13 transmits a predetermined instruction signal to cause the second driving unit of the stage driving device 12 to operate and adjusts the position and the tilt related to the optical axis AX direction of the substrate 2 .
  • a storage device 18 can store the data required to drive the stage. Note that the storage device 18 may be a memory formed in the control device 13 .
  • a user interface 19 can include a console unit for a user to make an operation related to parameter settings, a display unit to display parameters related to stage driving, and the like.
  • the control device 13 performs feedback control, via the stage driving device 12 , by arranging the substrate surface on a focus plane when the substrate stage 3 is driven in the Z direction.
  • operations such as increasing the acceleration of the movement of the substrate stage 3 , performing the focus measurement in advance by relaxing the settling tolerance of the substrate stage 3 , and the like can be considered.
  • measurement errors can increase because focus measurement will be performed in a state in which a deviation of the substrate stage 3 is left with respect to the target position.
  • the control device 13 needs to correct an instruction value and output the corrected instruction value to the stage driving device 12 .
  • the deviation of the measurement value of the substrate stage which is left with respect to the target value in the above-described manner is referred to as a “focus residual” here.
  • this focus residual changes depending on the exposure angle of view (step size). It has also become evident that the focus residual changes depending on the step direction and the position of an exposure target shot region on the substrate.
  • the control device 13 will obtain a correction formula corresponding to the angle of view, the step direction, and the position of the target shot region on the substrate. Therefore, the control device 13 will perform processing to calculate a focus correction formula.
  • FIG. 3 is a flowchart of the focus correction formula calculation processing which is executed by the control device 13 . Although this processing is executed before the exposure process, this processing need not be performed immediately before the exposure process, and the control device 13 need only store the information related to the calculated correction formula in the storage device 18 .
  • step S 101 the control device 13 determines a plurality of angles of view each of which is a condition for calculating the correction formula.
  • FIG. 4 is a flowchart of the processing performed to determine a plurality of candidate angles of view.
  • the control device 13 determines, in step S 201 , the minimum value and the maximum value among the angles of view to be set as candidates, and determines, in step S 202 , the pitch of angles of view between the determined minimum angle of view and the maximum angle of view. These values may be determined by the user.
  • the control device 13 determines, in step S 203 , a shot layout based on each of the plurality of angles of view obtained in accordance with the minimum value, the maximum value, and the pitch of the angle of view determined in steps S 201 and S 202 .
  • the determined plurality of angles of view and/or shot layouts are stored in the storage device 18 .
  • FIG. 5 shows an example of a shot layout by an angle A of view and an example of a shot layout by an angle B of view smaller than the angle A of view.
  • An example of layouts for correction formula calculation calculated in FIG. 4 is shown. Since the angle B of view is smaller than the angle A of view, the number of shot regions formed by the angle B of view is more than the number of shot regions formed by the angle A of view.
  • step S 102 the substrate 2 is conveyed into the apparatus and mounted on the substrate stage 3 .
  • step S 103 the control device 13 changes the exposure layout in step S 103 in accordance with the angle of view determined in step S 101 .
  • the control device 13 performs alignment measurement in step S 104 , drives the substrate stage 3 (drives the substrate stage in a horizontal direction with respect to the image plane) so that the target shot region will come to the focus measurement position in step S 105 , and performs the focus measurement in step S 106 .
  • step S 107 the control device 13 executes a focus driving operation (drives the substrate stage in a vertical direction with respect to the image plane) in accordance with the focus target value and the focus measurement value measured in step S 106 .
  • step S 108 the control device 13 calculates, as a focus residual, the difference of the focus measurement value from the focus target value.
  • step S 109 the control device 13 associates the identification number of the target shot region with the focus residual calculated in step S 108 and stores the associated identification number and the focus residual in the storage device 18 .
  • the position of the shot region on the substrate can be specified based on the identification number of the shot region.
  • step S 110 the control device 13 determines whether the measurement has been completed for all of the shot regions.
  • step S 111 determines whether the measurement has been completed for all of the layouts determined in step S 101 . If the measurement has not been completed, the process will return to step S 103 to repeat the processes for the measurement of the next layout. If the measurement has been completed for all of the layouts, the control device 13 calculates the correction formula in step S 112 .
  • FIG. 6 is a flowchart illustrating correction formula calculation processing performed in step S 112 .
  • the control device 13 obtains the plurality of angles of view determined in step S 101 .
  • the control device 13 determines the angle of view to be set as the processing target from the obtained plurality of angles of view. Processing related to the angle of view determined in step S 302 will be performed in the following processes of steps S 303 to S 306 .
  • the control device 13 obtains the information of the focus residual for each shot region stored in the storage device 18 .
  • step S 304 the control device 13 classifies the obtained information of the focus residual for each shot region in accordance with the step direction (the plus direction/the minus direction) of the substrate stage 3 .
  • step S 305 the control device 13 performs a polynomial approximation of the relationship between the shot region and the focus residual for each step direction, and stores the obtained result in the storage device 18 (S 306 ).
  • step S 307 the control device 13 determines whether the processing has been performed for all of the angles of view. If the processing has not been completed for all of the angles of view, the process returns to step S 303 , and the processing is repeated for the next angle of view. The correction formula is calculated for each angle of view in this manner.
  • the correction formula calculation processing includes the following measurement processes.
  • the above-described processes (a) to (c) are repeated for each shot region for each of the plurality of angles of view.
  • a plurality of correction formulas are calculated (step S 112 ) based on the residual for each shot region obtained for each of the plurality of angles of view based on the measurement process described above.
  • step S 401 the control device 13 calculates the correction formula corresponding to the exposure layout.
  • FIG. 8 shows a flowchart of the correction formula calculation processing performed in step S 401 .
  • step S 501 the control device 13 obtains the information of the angle of view (that is, the layout) at the time of exposure from the target exposure recipe.
  • step S 502 the control device 13 determines whether the obtained layout can be corrected. For example, this is determined by whether the main driving direction of the substrate stage is the same under the layout and exposure conditions set when the correction formula was obtained. If it is determined that obtained layout cannot be corrected, 0 is set as the coefficient of the correction formula.
  • the control device 13 confirms, in step S 503 , whether the angle of view at the time of exposure obtained in step S 501 falls outside the range between the maximum value and the minimum value of the plurality of angles of view determined in step S 101 . If the angle of view obtained in step S 501 falls outside the range, the correction formula of an angle of view closest to the exposure angle of view will be obtained in step S 504 from the plurality of angles of view determined in step S 101 . That is, in a case in which the angle of view at the time of exposure is smaller than the minimum angle of view of the plurality of the angles of view, the correction formula for the minimum angle of view will be determined as the correction formula for the angle of view at the time of exposure. Also, in a case in which the angle of view at the time of exposure is larger than the maximum angle of view of the plurality of the angles of view, the correction formula for the maximum angle of view will be determined as the correction formula for the angle of view at the time of exposure.
  • step S 505 the correction formulas used for the two angles of view preceding and succeeding the exposure angle of view will be obtained in step S 505 .
  • the control device 13 performs interpolation of parameters of the correction formulas used for the two angles of view obtained in step S 505 .
  • step S 507 the control device 13 determines the correction formula corresponding to the angle of view at the time of exposure using the interpolated parameters.
  • the correction formula will be have a degree of one for the sake of descriptive convenience, and linear approximation will be performed by using the two angles of view preceding and succeeding the obtained exposure angle of view to calculate the correction formula.
  • X is a position of the shot region in the X direction of the substrate and that Z is the Z direction correction value.
  • the coefficients of the two correction formulas are linearly interpolated and the intercepts are linearly interpolated.
  • the substrate is loaded in step S 402 , and alignment measurement is performed in step S 403 .
  • the control device 13 calculates, in step S 404 , the Z-direction correction value of each shot region from the correction formula corresponding to the exposure angle of view calculated in step S 401 .
  • step S 405 the control device 13 performs focus measurement.
  • step S 406 the control device 13 reflects, as an offset, the correction value obtained in step S 404 on the instruction value of the substrate stage, and the control device 13 executes focus driving in step S 407 .
  • the control device 13 performs the exposure process in step S 408 .
  • the control device 13 performs, in step S 409 , the focus measurement during the exposure process and stores (learns), in step S 410 , the focus residual.
  • step S 411 the control device 13 determines whether all of the exposure-target shot regions have been exposed. If the exposure process has not been completed for all of the shot regions, the process returns to step S 404 , and the processing is repeated for the next shot region which has not been exposed yet.
  • the correction formula of the newly used exposure angle of view is calculated in step S 413 simultaneously with the unloading of the substrate in step S 412 .
  • the newly calculated correction formula is stored in the same manner as the correction formula obtained and stored in FIG. 6 . As a result, the interpolation correction formula calculation accuracy is improved.
  • FIG. 9 shows an example of the correction formula result for each angle of view calculated in step S 112 that is displayed by the user interface 19 .
  • An item 91 shows the angle of view.
  • Items 92 and 93 each show the step direction of the substrate stage.
  • An item 94 shows the calculated correction coefficient.
  • Each coefficient of the correction formula obtained by function approximation is expressed as a “Coefficient”, and each intercept is expressed an “Intercept”.
  • FIG. 10 is a chart showing the correction result according to the embodiment.
  • the abscissa indicates the angle of view of which the focus residual has been obtained, and the ordinate indicates a focus residual 3 ⁇ within the substrate surface.
  • focus residual correction can be performed for all of the exposure angles of view according to this embodiment, it is possible to improve the focus accuracy for each angle of view.
  • a method of manufacturing an article according to an embodiment of the present invention is suitable for manufacturing an article, for example, a microdevice such as a semiconductor device or an element having a microstructure.
  • the method of manufacturing an article according to this embodiment includes a step of forming, using the above-described exposure apparatus, a latent image pattern on a photoresist applied to a substrate (a step of exposing a substrate), and a step of developing the substrate with the latent image pattern formed in the above step.
  • the manufacturing method also includes other known steps (for example, oxidation, deposition, vapor deposition, doping, planarization, etching, resist removal, dicing, bonding, and packaging).
  • the method of manufacturing an article according to this embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article compared to conventional methods.
  • Embodiment(s) of the present invention can also be realized by a computer of a system or apparatus that reads out and executes computer executable instructions (e.g., one or more programs) recorded on a storage medium (which may also be referred to more fully as a ‘non-transitory computer-readable storage medium’) to perform the functions of one or more of the above-described embodiment(s) and/or that includes one or more circuits (e.g., application specific integrated circuit (ASIC)) for performing the functions of one or more of the above-described embodiment(s), and by a method performed by the computer of the system or apparatus by, for example, reading out and executing the computer executable instructions from the storage medium to perform the functions of one or more of the above-described embodiment(s) and/or controlling the one or more circuits to perform the functions of one or more of the above-described embodiment(s).
  • computer executable instructions e.g., one or more programs
  • a storage medium which may also be referred to more fully as a
  • the computer may comprise one or more processors (e.g., central processing unit (CPU), micro processing unit (MPU)) and may include a network of separate computers or separate processors to read out and execute the computer executable instructions.
  • the computer executable instructions may be provided to the computer, for example, from a network or the storage medium.
  • the storage medium may include, for example, one or more of a hard disk, a random-access memory (RAM), a read only memory (ROM), a storage of distributed computing systems, an optical disk (such as a compact disc (CD), digital versatile disc (DVD), or Blu-ray Disc (BD)TM), a flash memory device, a memory card, and the like.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
US16/274,569 2018-02-28 2019-02-13 Exposure apparatus, method thereof, and method of manufacturing article Active US10635005B2 (en)

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JP2018035418A JP6688330B2 (ja) 2018-02-28 2018-02-28 露光方法、露光装置、決定方法および物品製造方法
JP2018-035418 2018-02-28

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US20230211436A1 (en) * 2021-12-30 2023-07-06 Semes Co., Ltd. Apparatus for treating substrate and method for treating a substrate

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CN110209016A (zh) 2019-09-06
JP2019152685A (ja) 2019-09-12
KR20190103974A (ko) 2019-09-05
TWI712072B (zh) 2020-12-01
EP3534212A1 (en) 2019-09-04
US20190265599A1 (en) 2019-08-29
KR102459126B1 (ko) 2022-10-26
TW201937549A (zh) 2019-09-16
SG10201901269PA (en) 2019-09-27
CN110209016B (zh) 2021-09-28
EP3534212B1 (en) 2023-05-10

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