UA89370U - Device for the determination of carrier life time in semiconductors - Google Patents

Device for the determination of carrier life time in semiconductors

Info

Publication number
UA89370U
UA89370U UAU201303882U UAU201303882U UA89370U UA 89370 U UA89370 U UA 89370U UA U201303882 U UAU201303882 U UA U201303882U UA U201303882 U UAU201303882 U UA U201303882U UA 89370 U UA89370 U UA 89370U
Authority
UA
Ukraine
Prior art keywords
terminal
field
resistor
square
pulse generator
Prior art date
Application number
UAU201303882U
Other languages
Russian (ru)
Ukrainian (uk)
Inventor
Владимир Степанович Осадчук
Александр Владимирович Осадчук
Людмила Викторовна Крилик
Роман Валериевич Дуда
Original Assignee
Винницкий Национальный Технический Университет
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Винницкий Национальный Технический Университет filed Critical Винницкий Национальный Технический Университет
Priority to UAU201303882U priority Critical patent/UA89370U/en
Publication of UA89370U publication Critical patent/UA89370U/en

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

A device for the determination of carrier life time comprises a twin pulse generator comprising of first and second square-pulse generators, delay circuit, and pulse clipper connected to first and second square-pulse generators and delay circuit which is series-connected to first square-pulse generator. Second square-pulse generator is parallel connected to first square-pulse generator and delay circuit. The device comprises a signal processing and indication unit, microelectronic frequency transducer comprising first, second and third resistors , first and second field-effect transistors, bipolar transistor, first and second capacitors and DC voltage source. First pole of DC voltage source is connected to first capacitor terminal, second terminal of third resistor and collector of bipolar transistor which base is connected to first terminal of third resistor and second terminal of first capacitor which first terminal is connected to bipolar transistor emitter, drain of first field-effect transistor, first and second gates of second field-effect transistor, first output terminal of the device and first terminal of first resistor, which second terminal is connected to first terminal of second resistor, sources of first and second field-effect transistors and second device terminal. Second terminal of second resistor is connected to drain of second field-effect transistor, first and second gates of first field-effect transistor, second terminal of second capacitor, second pole of DC voltage source, and signal processing and indication unit is connected to the device output terminals.
UAU201303882U 2013-03-29 2013-03-29 Device for the determination of carrier life time in semiconductors UA89370U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
UAU201303882U UA89370U (en) 2013-03-29 2013-03-29 Device for the determination of carrier life time in semiconductors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
UAU201303882U UA89370U (en) 2013-03-29 2013-03-29 Device for the determination of carrier life time in semiconductors

Publications (1)

Publication Number Publication Date
UA89370U true UA89370U (en) 2014-04-25

Family

ID=52281809

Family Applications (1)

Application Number Title Priority Date Filing Date
UAU201303882U UA89370U (en) 2013-03-29 2013-03-29 Device for the determination of carrier life time in semiconductors

Country Status (1)

Country Link
UA (1) UA89370U (en)

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