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Application filed by Вінницький Національний Технічний УніверситетfiledCriticalВінницький Національний Технічний Університет
Priority to UAU201306636UpriorityCriticalpatent/UA91868U/en
Publication of UA91868UpublicationCriticalpatent/UA91868U/en
Testing Or Measuring Of Semiconductors Or The Like
(AREA)
Abstract
A microelectronic device for the determination of thickness of epitaxial layers in semiconductors includes a light source and epitaxial structure that are connected to each other in sequence. Additionally it comprises a unit for signal processing and indication, microelectronic frequency converter that includes a photoresistor, resistor, first and second field transistors, inductance, restriction capacitor, two output terminals and a DC power source.
UAU201306636U2013-05-282013-05-28Microelectronic device for determination of thickness of epitaxial layers in semiconductors
UA91868U
(en)