UA64807U - Semiconductor device for measurement of density of optical power - Google Patents

Semiconductor device for measurement of density of optical power

Info

Publication number
UA64807U
UA64807U UAU201103006U UAU201103006U UA64807U UA 64807 U UA64807 U UA 64807U UA U201103006 U UAU201103006 U UA U201103006U UA U201103006 U UAU201103006 U UA U201103006U UA 64807 U UA64807 U UA 64807U
Authority
UA
Ukraine
Prior art keywords
output
density
measurement
semiconductor device
optical power
Prior art date
Application number
UAU201103006U
Other languages
Russian (ru)
Ukrainian (uk)
Inventor
Владимир Степанович Осадчук
Александр Владимирович Осадчук
Елена Николаевна Ильченко
Богдан Сергеевич Савчук
Original Assignee
Винницкий Национальный Технический Университет
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Винницкий Национальный Технический Университет filed Critical Винницкий Национальный Технический Университет
Priority to UAU201103006U priority Critical patent/UA64807U/en
Publication of UA64807U publication Critical patent/UA64807U/en

Links

Landscapes

  • Measurement Of Resistance Or Impedance (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

Semiconductor device for measurement of density of optical power includes a source of direct voltage, the first and the second poles of the source of direct voltage are connected to common bus, at that there is included a bipolar transistor, two-gate MDS transistor, the third, fourth and fifth capacitors, passive inductivity, solar battery, varicap, at that the first output of the first capacitor is connected to the first output of the first resistor and the base of bipolar transistor, the second output of the first resistor if connected to the second output of passive inductivity, first output of the second capacitor and first pole of source of direct voltage, at that the sink of two-gate MDS transistor is connected to emitter of the bi-polar transistor.
UAU201103006U 2011-03-14 2011-03-14 Semiconductor device for measurement of density of optical power UA64807U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
UAU201103006U UA64807U (en) 2011-03-14 2011-03-14 Semiconductor device for measurement of density of optical power

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
UAU201103006U UA64807U (en) 2011-03-14 2011-03-14 Semiconductor device for measurement of density of optical power

Publications (1)

Publication Number Publication Date
UA64807U true UA64807U (en) 2011-11-25

Family

ID=50839719

Family Applications (1)

Application Number Title Priority Date Filing Date
UAU201103006U UA64807U (en) 2011-03-14 2011-03-14 Semiconductor device for measurement of density of optical power

Country Status (1)

Country Link
UA (1) UA64807U (en)

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