TWM641828U - Substrate edge grinding system - Google Patents
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- TWM641828U TWM641828U TW111214569U TW111214569U TWM641828U TW M641828 U TWM641828 U TW M641828U TW 111214569 U TW111214569 U TW 111214569U TW 111214569 U TW111214569 U TW 111214569U TW M641828 U TWM641828 U TW M641828U
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Abstract
一種基材邊緣研磨系統,包括固定機構、移載機構、研磨機構、測量單元及控制單元。移載機構用以承載基材。研磨機構相對滑設於固定機構且包括基座、角度調整元件以及研磨裝置,角度調整元件用以驅動研磨裝置轉動,研磨裝置相對於基座移動。測量單元設於固定機構。控制單元連接測量單元且將測量單元測量的基材研磨前的位置計算形成至少一研磨路徑,並依研磨路徑控制研磨裝置的位置,並控制角度調整元件調整研磨裝置相對基材的角度,使得研磨裝置研磨基材的邊緣。A substrate edge grinding system includes a fixing mechanism, a transfer mechanism, a grinding mechanism, a measuring unit and a control unit. The transfer mechanism is used for carrying the substrate. The grinding mechanism is relatively slid on the fixing mechanism and includes a base, an angle adjustment element and a grinding device. The angle adjustment element is used to drive the grinding device to rotate, and the grinding device moves relative to the base. The measuring unit is set on the fixing mechanism. The control unit is connected to the measurement unit and calculates the position of the substrate measured by the measurement unit before grinding to form at least one grinding path, and controls the position of the grinding device according to the grinding path, and controls the angle adjustment element to adjust the angle of the grinding device relative to the substrate, so that the grinding The device grinds the edges of the substrate.
Description
本揭露是有關於一種基材邊緣研磨系統。 The present disclosure relates to a substrate edge grinding system.
習用技術針對基材邊緣研磨的作法,由於無法自動調整角度,往往需要手動控制調整砂輪的角度,並需要重新校點確認研磨精度,如此一來,如此會浪費大量生產時間,造成產能低落的情況,且由於手動調整砂輪角度,其研磨精度較難以控制。並且,習用技術並無量測、校正、補償之手段,難以控制工件精度。當然,雖然可在生產線上配置不同角度的研磨頭,但其整體的設備長度、刀具成本及維護費用則倍增;另有以成型刀具對工件進行研磨加工之方式,此方式雖可對工件快速研磨成形,但其卻難以符合如第5B圖多角度高精度研磨要求;又,工件以顯示面板之玻璃基板為例,玻璃基板的厚度大約是1.8mm~0.33mm,實不易以成型刀具精準地將其端面研磨導角成多角度以利後製程進行電路佈線,再者成型刀具的製作及克服其自身磨耗也是其製造量產之瓶頸。 The conventional technology for grinding the edge of the base material cannot automatically adjust the angle, so it is often necessary to manually adjust the angle of the grinding wheel and re-calibrate the point to confirm the grinding accuracy. In this way, a lot of production time will be wasted and the production capacity will be reduced. , and due to the manual adjustment of the grinding wheel angle, the grinding accuracy is difficult to control. Moreover, the conventional technology has no means of measurement, calibration, and compensation, and it is difficult to control the accuracy of the workpiece. Of course, although grinding heads with different angles can be configured on the production line, the overall equipment length, tool cost and maintenance cost will be doubled; there is also a method of grinding the workpiece with a forming tool, although this method can quickly grind the workpiece Forming, but it is difficult to meet the requirements of multi-angle high-precision grinding as shown in Figure 5B; in addition, the workpiece is the glass substrate of the display panel as an example. The end face is ground into multiple angles to facilitate circuit wiring in the subsequent process, and the production of the forming tool and overcoming its own wear are also the bottleneck of its mass production.
另外,習用技術會受外界溫度變化,導致研磨精度降低。 In addition, conventional technology will be subject to external temperature changes, resulting in reduced grinding accuracy.
因此,如何改良並能提供一種基材邊緣研磨系統來避免上述所遭遇到的問題,係業界所待解決之課題。 Therefore, how to improve and provide a substrate edge grinding system to avoid the above-mentioned problems is an issue to be solved in the industry.
本揭露實施例提供一種基材邊緣研磨系統,自動調整較度,具備動態研磨姿態之調整,並能提升研磨精度。 The embodiment of the present disclosure provides a substrate edge grinding system, which can automatically adjust the angle, has the ability to adjust the dynamic grinding posture, and can improve the grinding accuracy.
本揭露實施例的一種基材邊緣研磨系統,包括一固定機構、一移載機構、至少一研磨機構、一量測單元以及一控制單元。移載機構用以承載一基材,移載機構沿著一第一方向相對於固定機構移動。至少一研磨機構相對滑設於固定機構,研磨機構包括一基座、一角度調整元件以及一研磨裝置,研磨裝置相對於基座沿著一第二方向移動,研磨裝置相對於基座沿著一第三方向移動,第二方向與第三方向分別不同於第一方向,角度調整元件用以驅動研磨裝置繞第一方向轉動而具有不同時間點之多個角度。量測單元係設於固定機構。當移載機構沿第一方向移動至研磨機構的過程中,量測單元係能量測基材研磨前之第二方向與第三方向之位置;以及控制單元連接量測單元,控制單元將量測單元量測之基材研磨前之第二方向與第三方向之位置計算形成至少一研磨路徑,且控制單元係能依每個研磨路徑而控制這些研磨裝置於第二方向與第三方向上的位置,並控制角度調整元件調整研磨裝置相對基材之角度,研磨裝置沿著第一方向相對於基材轉動,使這些研磨裝置研磨基材之邊緣。 A substrate edge grinding system according to an embodiment of the present disclosure includes a fixing mechanism, a transfer mechanism, at least one grinding mechanism, a measuring unit and a control unit. The transfer mechanism is used to carry a substrate, and the transfer mechanism moves relative to the fixing mechanism along a first direction. At least one grinding mechanism is relatively slidably arranged on the fixing mechanism. The grinding mechanism includes a base, an angle adjustment element and a grinding device. The grinding device moves along a second direction relative to the base. The grinding device moves along a second direction relative to the base. The third direction moves, the second direction and the third direction are respectively different from the first direction, and the angle adjustment element is used to drive the grinding device to rotate around the first direction to have multiple angles at different time points. The measuring unit is set on the fixing mechanism. When the transfer mechanism moves to the grinding mechanism along the first direction, the measuring unit can measure the position of the base material in the second direction and the third direction before grinding; and the control unit is connected with the measuring unit, and the control unit will measure The position calculation of the second direction and the third direction of the substrate measured by the measuring unit before grinding forms at least one grinding path, and the control unit can control the position of these grinding devices in the second direction and the third direction according to each grinding path position, and control the angle adjustment element to adjust the angle of the grinding device relative to the substrate, and the grinding device rotates relative to the substrate along the first direction, so that these grinding devices grind the edge of the substrate.
本揭露實施例的一種基材邊緣研磨系統,基材邊緣研磨系統包括一固定機構、一移載機構、至少一研磨機構以及一溫控機構。移載機構用以承載一基材,移載機構沿著一第一方向相對於固定機構移動。研磨機構相對滑設於固定機構,研磨機構包括一基座、一角度調整元件以及一研磨裝置,各研磨裝置相對於該基座沿著一第二方向移動,研磨裝置相對 於基座沿著一第三方向移動,第二方向與第三方向分別不同於該第一方向,角度調整元件用以驅動研磨裝置繞第一方向轉動而具有不同時間點之多個角度,這些研磨裝置沿著第一方向相對於基材轉動,使這些研磨裝置研磨基材之邊緣。溫控機構包括一保溫元件以及一冰水機元件。保溫元件係設置於固定機構、移載機構與研磨機構之外表面。冰水機元件連接於研磨機構,冰水機元件係溫控一冷卻液,並提供冷卻液至移載機構。 A substrate edge grinding system according to an embodiment of the present disclosure, the substrate edge grinding system includes a fixing mechanism, a transfer mechanism, at least one grinding mechanism and a temperature control mechanism. The transfer mechanism is used to carry a substrate, and the transfer mechanism moves relative to the fixing mechanism along a first direction. The grinding mechanism is relatively slidingly arranged on the fixing mechanism. The grinding mechanism includes a base, an angle adjustment element and a grinding device. Each grinding device moves along a second direction relative to the base. The grinding device is relatively When the base moves along a third direction, the second direction and the third direction are respectively different from the first direction, the angle adjustment element is used to drive the grinding device to rotate around the first direction to have multiple angles at different time points, these The grinding devices are rotated relative to the substrate in a first direction, causing the grinding devices to grind the edges of the substrate. The temperature control mechanism includes a thermal insulation element and an ice water machine element. The thermal insulation element is arranged on the outer surfaces of the fixing mechanism, the transfer mechanism and the grinding mechanism. The components of the chiller are connected to the grinding mechanism, and the components of the chiller are controlled by a coolant, which is provided to the transfer mechanism.
本揭露實施例的基材邊緣研磨系統,基材邊緣研磨系統包括一固定機構、一移載機構、至少一研磨機構以及一量測單元。移載機構用以承載一基材,移載機構沿著一第一方向相對於固定機構移動。研磨機構相對滑設於固定機構,研磨機構包括一基座、一角度調整元件以及一研磨裝置。研磨裝置相對於基座沿著一第二方向移動,研磨裝置相對於基座沿著一第三方向移動,第二方向與第三方向分別不同於第一方向,角度調整元件用以驅動研磨裝置繞第一方向轉動而具有不同時間點的一角度,這些研磨裝置沿著第一方向相對於基材轉動,使這些研磨裝置研磨基材之邊緣。量測單元係設於該固定機構,量測單元包括多個第一量測元件以及多個第二量測元件。第一量測元件沿著第二方向設置於研磨機構,第二量測元件沿著第三方向設置於研磨機構,且第一量測元件與第二量測元件位於研磨裝置之上游側,當移載機構沿第一方向移動至研磨機構的過程中,第一量測元件與第二量測元件係能分別量測基材研磨前之第二方向與第三方向之位置。 The substrate edge grinding system of the disclosed embodiment includes a fixing mechanism, a transfer mechanism, at least one grinding mechanism and a measuring unit. The transfer mechanism is used to carry a substrate, and the transfer mechanism moves relative to the fixing mechanism along a first direction. The grinding mechanism is relatively slidably arranged on the fixing mechanism, and the grinding mechanism includes a base, an angle adjustment element and a grinding device. The grinding device moves along a second direction relative to the base, the grinding device moves along a third direction relative to the base, the second direction and the third direction are respectively different from the first direction, and the angle adjustment element is used to drive the grinding device Rotating about a first direction with an angle at different points in time, the grinding devices are rotated relative to the substrate along the first direction such that the grinding devices grind the edge of the substrate. The measuring unit is arranged on the fixing mechanism, and the measuring unit includes a plurality of first measuring elements and a plurality of second measuring elements. The first measuring element is arranged on the grinding mechanism along the second direction, the second measuring element is arranged on the grinding mechanism along the third direction, and the first measuring element and the second measuring element are located on the upstream side of the grinding device, when When the transfer mechanism moves to the grinding mechanism along the first direction, the first measuring element and the second measuring element are capable of measuring the position of the substrate in the second direction and the third direction before grinding respectively.
為讓本揭露能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 In order to make the present disclosure more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.
100,200:基材邊緣研磨系統 100,200: substrate edge grinding system
110:固定機構 110: fixed mechanism
112:床台 112: bed platform
114:龍門 114: Longmen
120:移載機構 120: transfer mechanism
122,322:載台 122,322: carrier
124:底座 124: base
126:延伸件 126: extension
130:校正單元 130: Correction unit
140:研磨機構 140: grinding mechanism
141:基座 141: base
142:柱體 142: Cylinder
144:角度調整元件 144: Angle adjustment element
146:研磨裝置 146: Grinding device
146A:磨料 146A: Abrasive
150:量測單元 150: Measuring unit
152,252:第一量測元件 152,252: the first measuring element
154,254:第二量測元件 154,254: Second measuring element
156,256:第三量測元件 156,256: the third measuring element
158A:第一光學尺 158A: The first optical ruler
158B:第二光學尺 158B: Second optical ruler
160:控制單元 160: control unit
170,270,370:溫控機構 170,270,370: temperature control mechanism
172:保溫元件 172: Insulation element
174:冰水機元件 174: Chiller components
322A:內部位置 322A: Internal position
376:冷水流道 376: Cold water runner
378:溫度控制系統 378: Temperature control system
A:角度 A: Angle
A1:區域 A1: area
B:傾角角度 B: Angle of inclination
C1:第一導角 C1: first chamfer
C2:第二導角 C2: second chamfer
C3:第三導角 C3: Third chamfer
K1:第一磨料粒度 K1: The first abrasive particle size
K2:第二磨料粒度 K2: Second abrasive grain size
L1:第一方向 L1: the first direction
L2:第二方向 L2: the second direction
L3:第三方向 L3: the third direction
M1:冷卻液 M1: coolant
N1,N2:流體保溫管 N1, N2: fluid insulation pipe
R:轉動方向 R: direction of rotation
ST:基材 ST: Substrate
ST1,ST2,ST11,ST12:邊緣 ST1, ST2, ST11, ST12: Edge
ST3:上表面 ST3: upper surface
TE:對位記號 TE: Counterpoint mark
第1圖為本揭露基材邊緣研磨系統一實施例的示意圖。 FIG. 1 is a schematic diagram of an embodiment of a substrate edge grinding system of the present disclosure.
第2圖為本揭露基材邊緣研磨系統一實施例的俯視圖。 FIG. 2 is a top view of an embodiment of the substrate edge grinding system of the present disclosure.
第3A圖為本揭露移載機構一實施例的側面示意圖。 FIG. 3A is a schematic side view of an embodiment of the transfer mechanism of the present disclosure.
第3B圖為本揭露移載機構一實施例的俯視示意圖。 FIG. 3B is a schematic top view of an embodiment of the transfer mechanism of the present disclosure.
第3C圖為本揭露移載機構移動至校正單元的俯視示意圖。 FIG. 3C is a schematic top view of the transfer mechanism of the present disclosure moving to the calibration unit.
第4A圖為本揭露移載機構移動至量測單元的側面示意圖。 FIG. 4A is a schematic side view of the transfer mechanism of the present disclosure moving to the measurement unit.
第4B圖為本揭露移載機構移動至量測單元的俯視示意圖。 FIG. 4B is a schematic top view of the transfer mechanism of the present disclosure moving to the measurement unit.
第5A圖為本揭露研磨機構研磨過程一實施例的示意圖。 FIG. 5A is a schematic diagram of an embodiment of the grinding process of the grinding mechanism of the present disclosure.
第5B圖為第5A圖之區域A1的局部放大示意圖。 Fig. 5B is a partially enlarged schematic diagram of the area A1 in Fig. 5A.
第6A圖為本揭露第一量測元件與第二量測元件一實施例的示意圖。 FIG. 6A is a schematic diagram of an embodiment of the first measuring element and the second measuring element of the present disclosure.
第6B圖為本揭露第一量測元件與第二量測元件配合第一光學尺與第二光學尺的示意圖。 FIG. 6B is a schematic diagram of the first measuring element and the second measuring element cooperating with the first optical ruler and the second optical ruler according to the present disclosure.
第6C圖為本揭露第一量測元件與第二量測元件另一實施例的示意圖。 FIG. 6C is a schematic diagram of another embodiment of the first measuring element and the second measuring element of the present disclosure.
第7A圖為本揭露第三量測元件一實施例的示意圖。 FIG. 7A is a schematic diagram of an embodiment of the third measuring element of the present disclosure.
第7B圖為本揭露第三量測元件另一實施例的示意圖。 FIG. 7B is a schematic diagram of another embodiment of the third measuring element of the present disclosure.
第8圖為本揭露研磨裝置之磨料一實施例的示意圖。 FIG. 8 is a schematic diagram of an embodiment of the abrasive material of the grinding device of the present disclosure.
第9圖為本揭露用於雙粒度研磨之研磨裝置一實施例的示意圖。 FIG. 9 is a schematic diagram of an embodiment of a grinding device for double-grain size grinding according to the present disclosure.
第10圖為本揭露基材邊緣研磨系統另一實施例的示意圖。 FIG. 10 is a schematic diagram of another embodiment of the substrate edge grinding system of the present disclosure.
第11圖為本揭露溫控機構另一實施例的示意圖。 FIG. 11 is a schematic diagram of another embodiment of the disclosed temperature control mechanism.
第12圖為本揭露溫控機構又一實施例的示意圖。 FIG. 12 is a schematic diagram of another embodiment of the temperature control mechanism of the present disclosure.
下文列舉實施例並配合附圖來進行詳細地說明,但所提供的實施例並非用以限制本揭露所涵蓋的範圍。此外,附圖僅以說明為目的,並未依照原尺寸作圖。為了方便理解,在下述說明中相同的元件將以相同的符號標示來說明。 Embodiments are listed below and described in detail with accompanying drawings, but the provided embodiments are not intended to limit the scope of the present disclosure. In addition, the drawings are for illustration purposes only and are not drawn to original scale. In order to facilitate understanding, the same elements will be described with the same symbols in the following description.
關於本揭露中所提到「包括」、「包含」、「具有」等的用語均為開放性的用語,也就是指「包含但不限於」。 Terms such as "including", "comprising", and "having" mentioned in this disclosure are all open terms, that is, "including but not limited to".
在各個實施例的說明中,當以「第一」、「第二」等的用語來說明元件時,僅用於將這些元件彼此區分,並不限制這些元件的順序或重要性。 In the description of various embodiments, when terms such as "first" and "second" are used to describe elements, they are only used to distinguish these elements from each other, and do not limit the order or importance of these elements.
在各個實施例的說明中,所謂的「耦接」或「連接」,其可指二或多個元件相互直接作實體或電性接觸,或是相互間接作實體或電性接觸,而「耦接」或「連接」還可指二或多個元件相互操作或動作。 In the description of various embodiments, the so-called "coupling" or "connection" may refer to two or more elements being in direct physical or electrical contact with each other, or indirect physical or electrical contact with each other, and "coupling" Connected or connected may also refer to two or more elements operating or acting with each other.
第1圖為本揭露基材邊緣研磨系統一實施例的示意圖。第2圖為本揭露基材邊緣研磨系統一實施例的俯視圖。請參閱第1圖與第2圖,本揭露的基材邊緣研磨系統100包括一固定機構110、一移載機構120、一校正單元130、至少一研磨機構140(如第2圖所示研磨機構140的數量為兩個)、一量測單元150、一控制單元160以及一溫控機構170,其中控制單元160連接量測單元150、研磨機構140與校正單元130,溫控機構170用以控制基材ST(如第3A圖所示)邊緣研磨系統減少因溫差造成之產品精度影
響。需說明的是,移載機構120沿著第一方向L1相對於固定機構110移動,依序經過校正單元130、量測單元150與研磨機構140,由此可知,校正單元130位於量測單元150與研磨機構140之上游側,或者是量測單元150與研磨機構140位於校正單元130之下游測,而所述「上游側」至「下游側」的方向與第一方向L1平行。
FIG. 1 is a schematic diagram of an embodiment of a substrate edge grinding system of the present disclosure. FIG. 2 is a top view of an embodiment of the substrate edge grinding system of the present disclosure. Please refer to FIG. 1 and FIG. 2, the substrate
在本實施例中,固定機構110包括一床台112與一龍門114,床台112之長度沿第一方向L1延伸,龍門114設於床台112之上。
In this embodiment, the
在本實施例中,兩個校正單元130分別設於固定機構110,兩個校正單元130分別可移動地設於龍門114,且這兩個校正單元130能沿著第二方向L2相對移動,使得移載機構120能通過這兩個校正單元130之間。在一實施例中,校正單元130例如為電荷耦合元件(Charge-coupled Device,CCD);於一實施例中,校正單元130係可將基材ST之影像回傳給控制單元160計算基材ST之位置,再控制移載機構120進行位置調整,以利下游側進行作業;又,於另一實施中,校正單元130係可為接觸式的位置導正機構,亦即,在傳送方向中利用漸縮式排列之定位滑輪來導正基材ST。
In this embodiment, two
在本實施例中,兩個研磨機構140相對滑設於固定機構110,每個研磨機構140係為一可相對該床台112運動之多軸機構,該研磨機構140包括一基座141、一柱體142、一角度調整元件144以及一研磨裝置146。基座141設於床台112之上,基座141上連接一柱體142,角度調整元件144連接柱體142,而研磨裝置146係設置於該角度調整元件144,其中,該柱體142係可相對該基座141滑動,該角度調整元件144係可相對該柱體142滑動,亦即這兩個研磨裝置146係可經由該柱體142之帶動而相對於基座
141沿著一第二方向L2移動,角度調整元件144與研磨裝置146相對於基座141的柱體142沿著一第三方向L3移動,其中第二方向L2與第三方向L3分別不同於第一方向L1。角度調整元件144例如為一直驅馬達(DD馬達),用以驅動研磨裝置146繞第一方向L1轉動。在其他實施例中,角度調整元件144亦可為連桿機構所構成之擺動模組來帶動該研磨裝置146相對基材ST(如第3A圖所示)作角度調整,但並不以此為限。
In this embodiment, two grinding
在本實施例中,量測單元150設於固定機構110,量測單元150包括多個第一量測元件152與多個第二量測元件154,這些第一量測元件152沿著第二方向L2設置於研磨機構140,這些第二量測元件154沿著第三方向L3設置於研磨機構140。這些第一量測元件152與這些第二量測元件154分別位於研磨裝置146之上游側。第一量測元件152與第二量測元件154例如為探規。
In this embodiment, the measuring
第3A圖為本揭露移載機構一實施例的側面示意圖。第3B圖為本揭露移載機構一實施例的俯視圖。請參閱第2圖至第3B圖。本揭露之移載機構120用以承載一基材ST。具體而言,移載機構120包括一載台122、一底座124與一延伸件126,底座124可移動地設於床台112之上,載台122設於底座124之上,基材ST位於載台122之上,基材ST具有相對的兩邊緣ST1、ST2,這兩個邊緣ST1、ST2分別對應至如第2圖之研磨機構140。此外,基材ST上具有至少一個(如兩個)對位記號TE,對位記號TE的型態可依據實際而調整,在本揭露之對位記號TE可設於靠近邊緣ST1、ST2。
FIG. 3A is a schematic side view of an embodiment of the transfer mechanism of the present disclosure. FIG. 3B is a top view of an embodiment of the transfer mechanism of the present disclosure. Please refer to Figures 2 to 3B. The
在一實施例中,延伸件126連接於底座124之一側之上,且延伸件126位於載台122之前端。在一實施例中,量測單元150包括多個第三
量測元件156,這些第三量測元件156設於移載機構120之載台122之前端。第三量測元件156例如為探規。
In one embodiment, the
在一實施例中,上游端進片過程:可由一撈爪或手動方式將基材ST移動至移載機構120之載台122,基材ST被載台122吸附而固定。接著,對位過程:移載機構120沿著第一方向L1相對於固定機構110移動,以移動基材ST至校正單元130之位置,如第3C圖所示並參酌第2圖,移載機構120移載基材ST通過校正單元130,校正單元130係能檢測基材ST上之對位記號TE,且控制單元160(第1圖)依據校正單元130之檢測結果而控制移載機構120調整基材ST之位置,以利位於下游側之量測單元150進行量測。舉例而言,由校正單元130(如CCD)拍攝基材ST角落的對位記號TE(如十字記號),並將拍攝結果資訊傳輸至控制單元160,控制單元160經計算後,控制移載機構120將基材ST旋轉位移補正放片後基材ST與第一方向L1平行度的誤差,也就是透過校正單元130校正基材ST之位置,當然前述之移載機構120係為一可多軸向運動之機構。
In one embodiment, the film feeding process at the upstream end: the substrate ST can be moved to the
接著,邊緣量測過程:移載機構120繼續沿著第一方向L1相對於固定機構110移動,以將基材ST由校正單元130之位置移動至量測單元150之位置,也就是研磨機構140之上游側,如第4A圖與第4B圖所示並參酌第2圖,當移載機構120沿第一方向L1移動至研磨機構140的過程中,量測單元150係能量測基材ST研磨前之第二方向L2與第三方向L3之位置。舉例而言,於第二方向L2上安裝於研磨機構140的第一量測元件152用以量測基材ST端面之輪廓、端面平行度或者平面度,於第三方向L3上安裝於研磨機構140的第二量測元件154用以量測基材ST之高度,藉由第一量測元件
152與第二量測元件154量測基材ST之邊緣ST1、ST2之曲線。需說明的是,於基材ST沿第一方向L1被移動的過程中,第一量測元件152與第二量測元件154會持續量測多個點位(可指定要量測幾個點)並記錄傳輸給控制單元160,以作為基材ST邊緣位置之邊緣位置資訊,亦即可取得基材ST邊緣之形貌。
Next, the edge measurement process: the
接著,角度研磨過程:控制單元160(如第1圖所示)將量測單元150量測之基材ST研磨前之第二方向L2與第三方向L3之位置資訊計算形成一條(或多條)研磨路徑,且控制單元160係能依每一條研磨路徑而控制這些研磨裝置146於第二方向L2與第三方向L3上的位置,並控制角度調整元件144調整研磨裝置146相對基材ST之角度A,角度調整元件144用以驅動研磨裝置繞第一方向L1轉動而具有不同時間點之多個角度A,研磨裝置146沿著第一方向L1相對於基材ST轉動一轉動方向R,讓研磨裝置146調整位置與角度,以符合基材ST形狀進行研磨,使這些研磨裝置146研磨基材ST之邊緣ST11、ST12,由於角度調整元件144驅動研磨裝置146繞第一方向L1轉動而具有不同時間點之多個角度A,也就是說,本揭露的角度調整元件144能自動調整研磨裝置146之角度,來提升產能。 Next, the angle grinding process: the control unit 160 (as shown in Figure 1) calculates the position information of the second direction L2 and the third direction L3 of the substrate ST measured by the measurement unit 150 before grinding to form one (or more) ) grinding path, and the control unit 160 can control the positions of these grinding devices 146 in the second direction L2 and the third direction L3 according to each grinding path, and control the angle adjustment element 144 to adjust the position of the grinding device 146 relative to the substrate ST Angle A, the angle adjustment element 144 is used to drive the grinding device to rotate around the first direction L1 to have a plurality of angles A at different time points, the grinding device 146 rotates along the first direction L1 with respect to the substrate ST in a rotation direction R, so that Grinding device 146 adjusts position and angle, grinds to conform to the shape of substrate ST, makes these grinding devices 146 grind the edge ST11, ST12 of substrate ST, because angle adjustment element 144 drives grinding device 146 to rotate around the first direction L1 and has different Multiple angles A at time points, that is to say, the angle adjusting element 144 of the present disclosure can automatically adjust the angle of the grinding device 146 to increase the production capacity.
由此可知,本揭露可藉由在研磨前之量測基材ST,來補合基材ST於移載機構120上第二方向L2、第三方向L3之位置,藉此產生研磨路徑,研磨路徑能提供研磨裝置146於研磨過程中之動態研磨姿態之調整,而可以具有如第5B圖所示邊緣ST11具有三種不同角度之第一導角C1、第二導角C2與第三導角C3,舉例而言,可先將角度調整元件144調整到第一個角度,並讓載台122沿著第一方向L1移動,使得研磨裝置146研磨基材ST
之邊緣ST11、ST12,研磨過程中,可根據第一量測元件152與第二量測元件154量測之基材ST之邊緣ST11、ST12之曲線,並調整補償更新基材ST邊緣位置之邊緣位置資訊。接著再將角度調整單元144調整到第二個角度並重複上述步驟,直到第三個角度,研磨後基材ST後,載台122沿著第一方向L1將基材ST送出。如此一來,如第5B圖所示邊緣ST11具有三種不同角度之第一導角C1、第二導角C2與第三導角C3,使基材ST邊緣端面被加工成多邊形。如此能供後續基材ST邊緣佈金屬導線時,線材較不容易被基材ST之銳角影響而斷線。又,於另一實施例中,在該基材ST沿第一方向L1進給研磨的過程中,由於第一量測元件152與第二量測元件154係相對位於該研磨裝置146之上游側,因此可先量測該基材ST之邊緣位置資訊,再即時地傳送給該控制單元160計算出對應該量測位置之研磨路徑,屆時該量測位置被進給至研磨裝置146時,該控制單元160即依據該研磨路徑而動態調整該研磨裝置146之研磨姿態。另外,如後舉例而言並非用以限制,利用本揭露所能達成多角度之精度,於第5B圖中,基材ST之厚度規格係可為1.8mm、1.6mm、1.3mm、1.1mm、0.7mm、0.55mm、0.4mm及0.33mm之其中之一者;而研磨成型的要求中,其第一導角C1的長度為10μm±1μm、第二導角C2的長度是11μm±1μm且第三導角C3的長度是12μm±1μm,即可藉由前述方法控制角度調整單元144調整研磨裝置146之研磨角度來達成對基材ST的邊緣進行多角度研磨之目的。
It can be seen that the present disclosure can supplement the position of the substrate ST in the second direction L2 and the third direction L3 on the
需說明的是,上述第一量測元件152與第二量測元件154依據實際研磨幾個角度而全部量測基材ST之後,產生多條研磨路徑,或者是第一量測元件152與第二量測元件154量測一次後,產生一條研磨路徑,接著
依據研磨路徑研磨之後,重新再由第一量測元件152與第二量測元件154量測基材ST。
It should be noted that after the above-mentioned first measuring
進一步來說,如第6A圖所示,第一量測元件152量測基材ST之邊緣ST1,以量測基材ST端面之平行度;第二量測元件154量測基材ST之上表面ST3,以量測基材ST之高度。本揭露不以此為限,如第6B圖所示,量測單元150更包括一第一光學尺158A與一第二光學尺158B,第一光學尺158A鄰近於第一量測元件152,第二光學尺158B鄰近於第二量測元件154,由此可知,第一光學尺158A與第二光學尺158B分別沿著第二方向L2與第三方向L3安裝於研磨機構140而可用以量測該研磨裝置146之進給。藉由第一光學尺158A與第二光學尺158B的回饋訊息,該控制單元160可於研磨過程中控制研磨裝置146按照研磨路徑來對基材進行研磨,藉此有效控制與提升研磨精度。並且,由於第一光學尺158A與第二光學尺158B是有讀取頭,而非依靠研磨機構140內之伺服馬達傳輸之數值。
Further, as shown in FIG. 6A, the
上述第一量測元件152與第二量測元件154為接觸式探規,然本揭露不對此加以限制,如第6C圖所示,第一量測元件252與第二量測元件254為非接觸式探規例如CCD或測距儀。
The above-mentioned first measuring
另外,如第7A圖、第2圖、第4A圖與第4B圖所示,當移載機構120沿第一方向L1輸送至研磨機構140時,這些第三量測元件156量測這些研磨裝置146之厚度,並記錄研磨裝置146之厚度,藉此補償調整至少一研磨路徑。由此可知,透過在研磨前、研磨後量測研磨裝置146之磨料146A之厚度,藉此補償研磨過程中研磨裝置146之材料(如砂輪磨料)之耗損,來調整研磨路徑,以確保研磨裝置146能在正確位置進行研磨與研磨量程度。
第三量測元件156為接觸式探規,然本揭露不以此為限,在第7B圖,第三量測元件256為非接觸式探規。
In addition, as shown in FIG. 7A, FIG. 2, FIG. 4A and FIG. 4B, when the
第8圖為本揭露研磨裝置之磨料一實施例的示意圖。請參閱第5A圖與第8圖,本揭露研磨裝置146的磨料146A進一步包括第一磨料粒度K1與第二磨料粒度K2,使得本揭露研磨裝置146為複合型砂輪,其中第二磨料粒度K2位於第一磨料粒度K1之外周圍,藉此構成兩種或兩種以上粒度的研磨裝置146。在一實施例中,控制該研磨裝置146相對該基材ST之角度姿態而使該磨料146A在研磨瞬間以局部面積對該基材ST進行研磨,第二磨料粒度K2的粒徑小於第一磨料粒度K1之粒徑,可設計成第一磨料粒度K1作為粗研磨,而第二磨料粒度K2作為細研磨,因而該基材ST由該磨料146A之內圈向外周圍進給的相對移動過程中,可使得該基材ST在同一道研磨製程中達到粗研磨與細研磨之效果,可避免僅有粗研磨而讓基材產生裂紋,又可避免僅有細研磨之切削量不足,並可同時兼顧在一定時間長度內生產時間與精度之需求。值得說明的是,於其他實施例中,所述該角度調整元件144用以驅動該研磨裝置146繞該第一方向L1轉動,其中該研磨裝置146係以相對於該第一方向L1呈某一角度之空間姿態設置,而在研磨過程中可使該磨料146A以局部面積對該基材ST進行研磨。
FIG. 8 is a schematic diagram of an embodiment of the abrasive material of the grinding device of the present disclosure. Please refer to FIG. 5A and FIG. 8, the abrasive 146A of the grinding
第9圖為本揭露用於雙粒度研磨之研磨裝置一實施例的示意圖,如第9圖所示,沿著第一方向L1移動基材ST,且將研磨裝置146繞著第二方向L2旋轉一傾角角度B,使得通過研磨裝置146的基材ST之邊緣ST1(在其他實施例中邊緣ST2也相同作法),可以先經由第8圖所示的第一磨料粒度K1之粗研磨,使得切削量足夠,而後在經由第二磨料粒度K2之細
研磨,細研磨能去補平因粗研磨造成之裂紋,在基材ST被移動過程中即可達到粗研磨與細研磨之效果。
FIG. 9 is a schematic diagram of an embodiment of the grinding device used for double-grain grinding in the present disclosure. As shown in FIG. 9, the substrate ST is moved along the first direction L1, and the grinding
第10圖為本揭露基材邊緣研磨系統另一實施例的示意圖。請參閱第10圖,本揭露之基材邊緣研磨系統200之溫控機構170包括一保溫元件172,保溫元件172係設置於固定機構110、移載機構120、校正單元130、研磨機構140、量測單元150與控制單元160之外表面。由於固定機構110與移載機構120通常為包含有鐵、鋁、不銹鋼等金屬材料製成,當然也有包含其他材料,例如花崗岩等石材,基材ST與固定機構110、移載機構120的熱變形累積會隨著溫度變化而形變。因此,本揭露保溫元件172例如為保溫泡棉,降低與空氣接觸的基材邊緣研磨系統200表面積,藉此降低室溫的變化或非均佈對基材邊緣研磨系統200產生的熱變形。另外,透過保溫元件172,使得校正單元130、研磨機構140、量測單元150有更高的穩定性,在量測與補償上能有更高的精度。
FIG. 10 is a schematic diagram of another embodiment of the substrate edge grinding system of the present disclosure. Please refer to FIG. 10, the
第11圖為本揭露溫控機構另一實施例的示意圖。請參閱第11圖,除了室溫不均佈或變化的影響之外,研磨過程中產生摩擦高溫,研磨冷卻液可提供研磨時的冷卻與潤滑作用,研磨冷卻液之溫度若與載台122溫度不同也會導致研磨過程中的熱變形,而若利用廠務端的水,恐會跟基材的溫度不同,因此,本揭露的溫控機構270包括一冰水機元件174,冰水機元件174連接於研磨機構140,冰水機元件174係溫控一冷卻液M1,藉此控制冷卻液M1之溫度與室溫相同,並透過管路提供冷卻液M1且導引至移載機構120之載台122上,降低溫度落差導致載台122有熱脹冷卻之變形情況,藉此提升研磨精度;又,於另一實施例中,冰水機元件174所提供之冷
卻液M1,其溫度係可依研磨速度、研磨時間或基材ST材質而動態調整,以利減小溫度因素對研磨精度之影響。
FIG. 11 is a schematic diagram of another embodiment of the disclosed temperature control mechanism. Please refer to Figure 11. In addition to the influence of uneven distribution or changes in room temperature, high frictional temperatures are generated during the grinding process. The grinding coolant can provide cooling and lubrication during grinding. If the temperature of the grinding coolant is the same as the temperature of the
第12圖為本揭露溫控機構又一實施例的示意圖。請參閱第12圖,本揭露的溫控機構370包括冷水流道376,冷水流道376包括流體保溫管N1,N2,流體保溫管N1,N2設置於載台322之內部位置322A,流體保溫管N1,N2能提供氣體或液體,藉此調整因研磨過程中溫度上升對載台322之影響,進一步可配合溫度控制系統378,使得環境溫度、載台322溫度以及研磨用冷卻水溫度盡量接近相同,藉此能提升研磨精度。
FIG. 12 is a schematic diagram of another embodiment of the temperature control mechanism of the present disclosure. Please refer to FIG. 12, the
在其他實施例中,研磨前、後過程中,可使用毛刷、風刀、水刀來清潔載台322與基材,移除殘留在載台322與基材上的髒汙微粒,可使得基材吸附後有較佳的平面度,降低髒污微粒對基材厚度的量測結果之影響,進而也可提升研磨精度。
In other embodiments, before and after grinding, brushes, air knives, and water knives can be used to clean the
綜上所述,本揭露可藉由在研磨前之量測基材,藉此產生研磨路徑,研磨路徑能提供研磨裝置於研磨過程中之動態研磨姿態之調整,對基材邊緣形成各種不同角度之導角。 To sum up, the present disclosure can generate a grinding path by measuring the substrate before grinding, and the grinding path can provide the dynamic adjustment of the grinding posture of the grinding device during the grinding process, forming various angles on the edge of the substrate lead angle.
再者,本揭露的角度調整元件能自動調整研磨裝置之角度,相較於人工調整,可藉此提升精度與重現性,並提升產能。 Furthermore, the angle adjustment element of the present disclosure can automatically adjust the angle of the grinding device, which can improve accuracy and reproducibility, and increase productivity compared with manual adjustment.
另外,本揭露對研磨過程中對基材、以及研磨前、後對研磨裝置之厚度進行量測,並藉此調整研磨路徑,來監控研磨品質並加以補償,以確保研磨基材之位置的正確性。 In addition, this disclosure measures the thickness of the substrate during the grinding process, and the thickness of the grinding device before and after grinding, and adjusts the grinding path to monitor the grinding quality and compensate, so as to ensure that the position of the grinding substrate is correct sex.
此外,本揭露對基材量測後而計算出的研磨路徑,可配合光學尺來控制研磨精度。 In addition, the grinding path calculated by measuring the base material in the present disclosure can cooperate with the optical scale to control the grinding accuracy.
另一方面,本揭露透過保溫元件,降低與空氣接觸的基材邊緣研磨系統表面積,藉此降低室溫的變化對基材邊緣研磨系統產生的熱變形,同時能使得校正單元、研磨機構、量測單元有更高的穩定性,在量測與補償上能有更高的精度。 On the other hand, the present disclosure reduces the surface area of the substrate edge grinding system in contact with the air through the heat preservation element, so as to reduce the thermal deformation caused by the change of room temperature to the substrate edge grinding system, and at the same time make the calibration unit, the grinding mechanism, the measuring The measuring unit has higher stability and can have higher accuracy in measurement and compensation.
另外,本揭露也能透過溫控冷卻液、以及載台內溫控氣流配合溫度控制系統,使其與環境溫度接近,降低載台因溫差之變形情況,藉此能提升研磨精度。 In addition, this disclosure can also use the temperature-controlled coolant and the temperature-controlled air flow in the stage to cooperate with the temperature control system to make it close to the ambient temperature, reduce the deformation of the stage due to temperature differences, and thereby improve the grinding accuracy.
雖然本揭露的一些實施例已以實施例揭露如上,然其並非用以限定本揭露,任何所屬技術領域中具有通常知識者,在不脫離本揭露之精神和範圍內,當可作些許之更動與潤飾,故本揭露之保護範圍當視後附之申請專利範圍所界定者為準。 Although some embodiments of the present disclosure have been disclosed as above, they are not intended to limit the present disclosure. Anyone with ordinary knowledge in the technical field may make some changes without departing from the spirit and scope of the present disclosure. Therefore, the scope of protection of this disclosure should be defined by the scope of the appended patent application.
100:基材邊緣研磨系統 100: Substrate edge grinding system
110:固定機構 110: fixed mechanism
120:移載機構 120: transfer mechanism
130:校正單元 130: Correction unit
140:研磨機構 140: grinding mechanism
150:量測單元 150: Measuring unit
160:控制單元 160: control unit
170:溫控機構 170: temperature control mechanism
L1:第一方向 L1: the first direction
L2:第二方向 L2: the second direction
L3:第三方向 L3: the third direction
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