TWM629562U - Improved leakage-proof and heat dissipation structure - Google Patents

Abstract

An anti-leakage heat dissipation structure includes a first adhesive layer, an insulating patch, a fixed layer, a high thermal conductivity system Several material layers and heat sinks. The middle area of the first adhesive layer is a first opening, the first adhesive layer is attached to the chip body, and the heat source penetrates through the first opening. The middle area of the insulating patch is the opening of the second hole, the insulating patch is attached on the first adhesive layer, and the heat source penetrates through the opening of the hole. The middle area of the fixing layer is the opening of the second hole, the fixing layer is attached on the insulating patch, and the inner two sides of the fixing layer each have a first groove space. The high thermal conductivity material layer is disposed in the opening of the second hole and the middle area of the lower surface is attached, and the upper surface of the high thermal conductivity material layer is parallel to the upper surface of the fixing layer. A part of the heat sink is attached to the second adhesive layer, and the bottom of the heat sink has a plurality of storage grooves.

Description

Improved structure to prevent leakage and heat dissipation

A heat dissipation structure, especially an improved structure for preventing leakage and heat dissipation.

According to this, all kinds of electronic components that are common at present are developed and designed in the direction of miniaturization. However, due to various factors such as miniaturization and substantial improvement of performance, various electronic components are also prone to generate high heat during actual operation, which affects the overall operation performance. Therefore, it is necessary to use the conventional micro-thermostat to dissipate heat. In the heat dissipation structure of conventional electronic devices, heat dissipation fins are arranged on the electronic components, and then the fan unit is used to guide the air flow to the outside of the casing. However, due to the close arrangement of the components inside the casing, the heat emitted by the heat source cannot be effectively discharged to the outside, resulting in a temperature rise effect inside the casing. The normal range will affect the reliability and service life of the entire electronic device, and will cause leakage problems and excessive temperature during overclocking. In addition, in order to improve the heat dissipation efficiency, a high thermal conductivity material layer with higher thermal conductivity needs to be used. However, the overflow of the high thermal conductivity material layer during the phase transition will cause the short circuit of the motherboard, and the uneven heating position of the heat source will also cause Thermal instability.

In addition, after gradually entering the post-Moore's Law era, the development focus of large wafer foundries has gradually shifted from the pursuit of more advanced nanometer processes in the past to the innovation of packaging technology. As the demand for high-performance computing (HPC) chips is rapidly increasing, data center and cloud computing infrastructure is becoming critical, especially for AI and 5G devices that can support new high-performance technologies ready. But the challenge for these devices is that the high performance of the device and its multi-core architecture will come with high bandwidth density and low latency. Heterogeneous integration has become a factor for the soaring demand for HPC chips, and has opened a new page for 3D IC packaging technology. Through silicon via technology (TSV) realizes the vertical interconnection between Die and Die. By drilling through holes on Si for interconnection between wafers, wire bonding is not required, which effectively shortens the length of interconnect lines, reduces signal transmission delay and loss, and improves Signal speed and bandwidth, reduce power consumption and package size, is to achieve multi-function, high performance, high reliability and lighter, thinner, smaller chip system-in-package. Because the 3D TSV packaging technology is not mature in terms of design, mass production, testing and supply chain, and the process cost is high, and the internal packaging problem of the 3D TSV packaging technology will cause the high thermal conductivity material layer to be pumped out (Pump out) phenomenon, which in turn affects the overall performance of the chip.

Therefore, how to solve the above-mentioned problems and deficiencies of the prior art is the subject that the relevant industry is eager to develop.

The purpose of this creation is to solve the problem that the thermal interface material is prone to overflow or pump out because of its non-viscosity or low viscosity.

This creation proposes an improved structure for preventing leakage and heat dissipation, which can prevent leakage and dissipate heat.

The present invention provides an improved structure for preventing leakage and heat dissipation, which is used to dissipate heat from a heat source on a chip body. The improved structure for preventing leakage and heat dissipation includes a first adhesive layer, a second adhesive layer, an insulating patch, a fixing layer and a High thermal conductivity material layer. The first adhesive layer has a first opening in the middle area, the first adhesive layer is attached to the chip body, and the heat source penetrates through the first opening. The insulating patch has a second hole opening in the middle area, the insulating patch is attached on the first adhesive layer, and the heat source penetrates the first hole opening. The fixed layer, the middle area of which is the opening of the second hole, the fixed layer is attached to the insulating patch, and the heat source is located in the first Inside the openings of the two holes, each of the inner sides of the fixed layer has a first groove space. The high thermal conductivity material layer is disposed within the opening of the second hole, and the middle area of the lower surface of the high thermal conductivity material layer is attached to and covers the top of the heat source, wherein the upper surface of the high thermal conductivity material layer is above the fixed layer The surfaces are parallel. The second adhesive layer, the middle area of which is a second opening. A part of the heat sink is attached to the second adhesive layer and a part of the lower surface of the bottom of the heat sink is in contact with the upper surface of the high thermal conductivity material layer, wherein the bottom of the heat sink has a plurality of storage grooves, and the depth of the storage groove is 0.001~0.15 mm.

In an embodiment of the present invention, the second adhesive layer is attached on the fixing layer, and the upper surface of the high thermal conductivity material layer is attached on the upper surface of the second opening.

In an embodiment of the present invention, each of the storage grooves has a square shape.

In an embodiment of the present invention, each of the storage grooves has a circular shape.

In an embodiment of the present invention, the outer shape of each of the storage grooves is a hexagon.

In an embodiment of the present invention, the fixing layer is a high temperature resistant foam or an insulating film.

In one embodiment of the present invention, the improved structure for preventing leakage and heat dissipation further includes a third adhesive layer whose shape and opening are the same as those of the second adhesive layer, wherein the third adhesive layer is disposed between the insulating patch and the fixing layer .

In an embodiment of the present invention, the shape of the outer boundary of the first groove space is a rectangle, a triangle or an arc.

In an embodiment of the present invention, the other two sides of the interior of the fixed layer each have a second groove space, and the outer boundary shape of the second groove space is a rectangle.

In an embodiment of the present invention, the storage grooves that are crisscrossed are formed through a stepped checkerboard layout.

To sum up, the improved structure for preventing leakage and heat dissipation disclosed in this creative embodiment can have the following effects: 1. Reduce the risk of leakage during assembly of the high thermal conductivity material layer due to the electrical conduction of the parts circuit; 2. Solve the problem that the internal packaging of the 3D TSV packaging technology will cause the pump out of the high thermal conductivity material; 3. Solve the problem of high power 4. Solve the problem of high temperature during overclocking; and 5. Solve the problem of unstable heat dissipation during repetitive testing.

The following describes in detail with specific embodiments, when it is easier to understand the purpose, technical content, characteristics and effects of this creation.

100: Improved structure for leak-proof heat dissipation

110: wafer body

120: heat source

130: The first adhesive layer

140: Insulation patch

150:Fixed Layer

155: First groove space

156: Second groove space

160: High thermal conductivity material layer

170: The second adhesive layer

180: The third adhesive layer

190, 191, 192, 193: Radiators

190A, 191A, 192A, 193A: Storage grooves

L1, L2, L3: length

H1: first opening

H2: Second opening

W1: The first hole opening

W2: The second hole opening

The first figure is a three-dimensional schematic diagram of the improved structure for preventing leakage and heat dissipation of the present creation.

The second picture A is a three-dimensional exploded schematic view of the improved structure for preventing leakage and heat dissipation of the present creation.

The second figure B is a perspective exploded schematic view of another embodiment of the improved structure for preventing leakage and heat dissipation of the present invention.

The third picture A is a cross-sectional view of the improved structure for preventing leakage and heat dissipation of the present creation.

The third figure B is a cross-sectional view of another embodiment of the improved structure for preventing leakage and heat dissipation of the present invention.

The fourth picture A is a schematic diagram of the radiator with hexagonal storage grooves created by the present invention.

The fourth picture B is a schematic diagram of the radiator with circular storage grooves created by the present invention.

The fourth picture C is a schematic diagram of the radiator with stepped storage grooves of the present invention.

The fifth picture is a top view of the improved structure for preventing leakage and heat dissipation of the present creation.

The sixth picture is the top view of the fixed layer of the improved structure for preventing leakage and heat dissipation of the present creation.

The seventh figure is a top view of another embodiment of the fixed layer of the improved structure for preventing leakage and heat dissipation of the present invention.

Figure 8 is a top view of another embodiment of the fixed layer of the improved structure for preventing leakage and heat dissipation of the present invention.

In order to solve the problem of leakage and insufficient heat dissipation of the existing heat dissipation structure, and the problem of the internal packaging of the 3D TSV packaging technology, the high thermal conductivity material will be pumped out. After years of research and development, the creator has improved the existing For the criticism of the product, the follow-up will introduce in detail how this creation achieves the most efficient functional demands with an improved structure that prevents leakage and heat dissipation.

With the improvement of microprocessor functions, the processing speed is getting faster and faster, and in order to effectively reduce the volume of the host, the volume of the components is reduced, and the more heat energy is emitted. Therefore, various heat dissipation structures are constantly evolving in order to achieve better heat dissipation effects.

Please refer to the first picture, the second picture A and the third picture A at the same time, the first picture is a three-dimensional schematic diagram of the improved structure for preventing leakage and heat dissipation of the present invention. The second picture A is a three-dimensional exploded schematic view of the improved structure for preventing leakage and heat dissipation of the present creation. The third picture A is a cross-sectional view of the improved structure for preventing leakage and heat dissipation of the present creation. As shown in the first figure, the second figure A and the third figure A, the present invention provides an improved structure 100 for preventing leakage and heat dissipation, which is used to dissipate heat from a heat source 120 on a chip body 110 . In this creative embodiment, the heat source is a chip, Lid or IHS. However, there may usually be some leakage caused by internal electronic components on the surface of the chip body 110 , and a solution is proposed in this creative embodiment to effectively solve the leakage problem. As will be further described below, the improved structure 100 for preventing leakage and heat dissipation includes a first adhesive layer 130 , an insulating patch 140 , a fixing layer 150 , a high thermal conductivity material layer 160 , a second adhesive layer 170 and a heat sink 190 . The first adhesive layer 130 has a first opening H1 in the middle area. The first adhesive layer 130 is attached to the chip body 110 and the heat source 120 penetrates through the first opening H1.

Regarding the radiator of this creation, the bottom has a special structure, which will be further described below. A part of the heat sink 190 is attached to the second adhesive layer 170 and a part of the lower surface of the bottom of the heat sink 190 is in contact with the high thermal conductivity. The upper surface of the coefficient material layer 160, wherein the bottom of the heat sink 190 (191 or 192) has a plurality of storage grooves and the storage grooves 190A of the heat sink 190 (191 or 192) can be square, round, six A polygonal groove or other polygonal appearance, but not limited to this, as long as a plurality of storage grooves are the spirit of this creation. For example, in the embodiments of Fig. 2A, Fig. 2B, Fig. 3A and Fig. 3B of the present invention, the outer shape of each of the storage grooves 190A of the heat sink 190 is an exemplary embodiment of a square, so as to This is for illustration and the depth of the storage groove 190A in this creative embodiment is 0.001-0.15 mm. The rest of the storage grooves (191A, 192A or 193A) are circular, hexagonal or stepped. The same can be proved. The fourth picture A is a radiator with hexagonal storage grooves created by the author. Schematic diagram, the fourth picture B is a schematic diagram of the radiator with circular storage grooves created by the present invention. The fourth picture C is a schematic diagram of the radiator with stepped storage grooves of the present invention. Among them, it is worth mentioning that the heat sink 193 of the stepped storage grooves 193A in Fig. 4 C is formed by a stepped checkerboard layout to form the storage grooves 193A in a crisscross pattern. The topmost square has a length L3 and two The distance between the tops of the squares is length L2, and the lateral dimension of storage groove 193A is length L1. The heat sink 190 of this creative embodiment may be a fin type heat sink, but is not limited thereto. In practice, the heat sink 190 will also use other fixing parts to be fixed with the improved structure 100 for preventing leakage and heat dissipation.

Please refer to Figures 5 to 7 at the same time. Figure 5 is a top view of the improved structure for preventing leakage and heat dissipation of the present invention. The sixth picture is the top view of the fixed layer of the improved structure for preventing leakage and heat dissipation of the present creation. The seventh figure is a top view of another embodiment of the fixed layer of the improved structure for preventing leakage and heat dissipation of the present invention. In addition, the middle area of the insulating patch 140 is a first hole opening W1, the insulating patch 140 is attached to the first adhesive layer 130 and the heat source 120 penetrates through the first hole opening W1, the insulating patch 140 can reduce the There is a risk of leakage during assembly of layers of high thermal conductivity materials due to the electrical conductivity of the part circuit. The middle area of the fixing layer 150 is the second hole opening W2 , the fixing layer 150 is attached on the insulating patch 140 and the heat source 120 is located inside the second hole opening W2 , wherein the inner side of the fixing layer 150 has a first groove space 155, in which the first concave The outer boundary shape of the slot space 155 is a rectangle, a triangle or an arc. The other two sides of the interior of the fixing layer 150 each have a second groove space 156 , and the outer boundary shape of the second groove space 156 is a rectangle.

In addition, the middle area of the second adhesive layer 170 is a second opening H2 (the shape of the opening is the same as or almost the same as the second hole opening W2 of the fixing layer 150 ), and the second adhesive layer 170 is attached to the fixing layer 150 The upper surface and the upper surface of the high thermal conductivity material layer 160 are attached to the upper surface of the second opening H2.

In this creative embodiment, the fixing layer 150 may be high temperature resistant foam or insulating film. Furthermore, the high thermal conductivity material layer 160 is disposed inside the second hole opening W2 and the middle area of the lower surface of the high thermal conductivity material layer 160 is attached and covered over the heat source 120 , wherein the high thermal conductivity material layer 160 is above the heat source 120 . The surface is parallel or almost parallel to the upper surface of the fixing layer 150 . When the temperature of the heat source 120 reaches a certain critical temperature (eg, 60 degrees Celsius), the fixed layer 150 will function as a retaining wall to prevent the liquid metal from leaking from the side. The high thermal conductivity material layer 160 in this creative embodiment is disposed in the heat dissipation and leakage prevention structure 100 through such a structure to solve the problem of excessive temperature during overclocking. In addition, as can be seen from the fourth figure, the second hole opening W2 of the fixed layer 150 is slightly larger than the area of the high thermal conductivity material layer 160 .

It can be seen that the fixed layer 150 will function as a retaining wall to prevent side leakage of the liquid metal. More specifically, when the high thermal conductivity material layer 160 starts to melt when the temperature exceeds 60 degrees Celsius, because of the function of the retaining wall of the fixed layer 150 , the liquid metal melted by the high thermal conductivity material layer 160 will flow to the first part of the fixed layer 150 . A groove space 155 gathers or flows into the storage groove 190A. Further, the volume of the first groove space 155 should be reserved to be 0.1 times the pressing volume of the high thermal conductivity material layer 160, and a plurality of storage grooves The grooves 190A can have sufficient space to accommodate these melted layers 160 of high thermal conductivity material. The high thermal conductivity material layer 160 will undergo a phase change due to the temperature during use, for example, a solid state becomes a liquid state (thick liquid-gel), but its volume will increase by 1.01 to 1.05 times during the phase change. Therefore, by utilizing the characteristics of the water reservoir, the fixed layer 150 on the wafer uses the storage containment method to store the excess amount in the desired place (the first groove space 155 and the plurality of storage grooves 190A). There is a predetermined amount of use when the temperature changes. In order to improve the heat dissipation efficiency, it is necessary to use high thermal conductivity materials with higher thermal conductivity. For the material layer 160, this creative embodiment prevents the short circuit problem of the motherboard caused by the overflow of the high thermal conductivity material layer 160 during the phase change, and can also solve the unstable heat dissipation phenomenon caused by the uneven heating position of the heat source, so that the high thermal conductivity material layer 160 The high thermal conductivity can be exerted. In addition, the second groove space 156 also performs the same function as the first groove space or the plurality of storage grooves 190A. As can be seen from the above description, the purpose of the present invention is to solve the phenomenon that the thermal interface material is prone to overflow or pump out because of its non-viscosity or low viscosity.

Please refer to the second B and the third B at the same time. The second B is a perspective exploded schematic view of another embodiment of the improved structure for preventing leakage and heat dissipation of the present invention. The third figure B is a cross-sectional view of another embodiment of the improved structure for preventing leakage and heat dissipation of the present invention. As shown in the figure, the improved structure 100 for preventing leakage and heat dissipation further includes a third adhesive layer 180 having the same shape and opening as the second adhesive layer 170 , wherein the third adhesive layer 180 is disposed on the insulating patch 140 and the fixed layer 150 . The rest of the structures of the second B and the third B are the same as those described above, and will not be repeated here.

It is worth mentioning that because the 3D TSV packaging process is immature in terms of design, mass production, testing and supply chain, and the process cost is high, and the internal packaging problems of the 3D TSV packaging technology will cause high thermal conductivity materials to produce pumps. Pump out phenomenon, and then affect the overall performance of the chip. By forming a plurality of storage grooves 190A (191A, 192A or 193A) at the bottom of the heat sink 190 (191, 192 or 193), the internal packaging problem of the 3D TSV packaging technology can be effectively solved.

To sum up, the improved structure for preventing leakage and heat dissipation disclosed in this creative embodiment can have the following effects: 1. Reduce the leakage risk during assembly of the high thermal conductivity material layer due to the electrical conduction of the component circuit; 2. Solve the 3D TSV packaging technology 3. Solve the problem of frequency reduction of high-power chips during operation; 4. Solve the problem of high temperature during overclocking; and 5. Solve the problem of unstable heat dissipation during repetitive testing.

Only the above descriptions are only preferred embodiments of the present creation, and are not intended to limit the scope of the present creation. Therefore, all equivalent changes or modifications made in accordance with the features and spirit described in the scope of the application for this creation shall be included in the scope of the patent application for this creation.

100: Improved structure for leak-proof heat dissipation

110: wafer body

120: heat source

130: The first adhesive layer

140: Insulation patch

150:Fixed Layer

155: First groove space

156: Second groove space

160: High thermal conductivity material layer

170: The second adhesive layer

190: Radiator

190A: Storage groove

H1: first opening

H2: Second opening

W1: The first hole opening

W2: The second hole opening

Claims (10)

An improved structure for preventing leakage and heat dissipation, which is used to dissipate heat from a heat source on a chip body. The improved structure for preventing leakage and heat dissipation comprises: a first adhesive layer, the middle area of which is a first opening, the first back The adhesive layer is attached to the chip body and the heat source penetrates the first opening; an insulating patch, the middle area of which is a first hole opening, and the insulating patch is attached to the first adhesive layer and the heat source penetrates through the first hole opening; a fixing layer, the middle area of which is a second hole opening, the fixing layer is attached to the insulating patch, and the heat source is located in the second hole opening, There is a first groove space on both sides of the inner side of the fixed layer; a high thermal conductivity material layer is disposed in the opening of the second hole and the middle area of the lower surface of the high thermal conductivity material layer is attached and Covering the heat source, wherein the upper surface of the high thermal conductivity material layer is parallel to the upper surface of the fixing layer; a second adhesive layer, the middle area of which is a second opening; and a heat sink, the radiator is Partly attached to the second adhesive layer and part of the lower surface of the bottom is in contact with the upper surface of the high thermal conductivity material layer, wherein the bottom of the heat sink has a plurality of storage grooves, and the depth of the storage grooves is 0.001 ~0.15mm. The improved structure for preventing leakage and heat dissipation according to claim 1, wherein the second adhesive layer is attached to the fixing layer and the upper surface of the high thermal conductivity material layer is attached to the upper surface of the second opening. The improved structure for preventing leakage and heat dissipation according to claim 1, wherein each of the storage grooves has a square shape. The improved structure for preventing leakage and heat dissipation according to claim 1, wherein each of the storage grooves has a circular shape. The improved structure for preventing leakage and heat dissipation according to claim 1, wherein each of the storage grooves has a hexagonal shape. According to the improved structure for preventing leakage and heat dissipation according to claim 2, the fixing layer is a high temperature resistant foam or an insulating film. The improved structure for preventing leakage and heat dissipation according to claim 2, further comprising a third adhesive layer whose shape and opening are the same as those of the second adhesive layer, wherein the third adhesive layer is disposed on the insulating patch and the between fixed layers. The improved structure for preventing leakage and heat dissipation according to claim 1, wherein the shape of the outer boundary of the first groove space is a rectangle, a triangle or an arc. The improved structure for preventing leakage and heat dissipation according to claim 1, wherein the other two sides of the interior of the fixed layer each have a second groove space, and the shape of the outer boundary of the second groove space is a rectangle. The improved structure for preventing leakage and heat dissipation as claimed in claim 1, wherein the storage grooves are formed crisscrossed by a stepped checkerboard layout.

Images