CN220895498U - Improved leakage-proof heat dissipation structure of high heat conductivity material - Google Patents

Abstract

The utility model discloses a leakage-proof heat dissipation improved structure of a high-heat-conductivity-coefficient material, which comprises an insulating film layer, a high-heat-conductivity-coefficient thermal interface material layer, a first flexible material composite layer, a second flexible material composite layer and a radiator. The insulating film layer has a film opening in its central region. The high heat conductivity thermal interface material layer has a body adjacent to the heat source and located above the chip body. The first flexible material composite layer is arranged on the insulating film layer, and the central area of the first flexible material composite layer is a first opening. The second flexible material composite layer is arranged below the insulating film layer, and the central area of the second flexible material composite layer is a second opening. The radiator is arranged on the first flexible material composite layer, the bottom of the radiator is provided with a boss, and the boss is provided with a plurality of storage grooves.

Description

Improved leakage-proof heat dissipation structure of high heat conductivity material

Technical Field

The present utility model relates to a heat dissipation structure, and more particularly, to a leakage-proof heat dissipation improved structure of a high thermal conductivity material for dissipating heat from a heat source on a chip body.

Background

At present, various electronic devices are developed in the miniaturization direction, however, due to various factors such as miniaturization and greatly improved performance, high heat is generated in the actual operation process, which affects the overall operation performance. Therefore, it is necessary to perform heat dissipation using a known micro-temperature uniformity plate. The heat dissipation structure of the existing electronic device is arranged on the electronic element by the heat dissipation fin, and then the fan unit is utilized to guide the air flow to the outside of the shell. However, since the arrangement of the components in the casing is compact, the heat emitted by the heat source cannot be effectively discharged to the outside, which causes a temperature rise effect in the casing, and if the temperature in the casing cannot be kept in a normal range under the vicious circle of continuously accumulating heat, the reliability and the service life of the whole electronic device can be affected, and the problem of electric leakage and the problem of overhigh temperature during over-frequency can be caused. In addition, in order to improve better heat dissipation efficiency, a high-heat-conductivity material layer with higher heat conductivity is needed, but overflow during phase change of the high-heat-conductivity material layer can cause a problem of motherboard short circuit, and heat dissipation instability phenomenon caused by uneven heat generation position of a heat source can also be caused.

In addition, after gradually entering the time of the post moore's law, the center of gravity of the development of the wafer foundry is gradually pursued more advanced nano-fabrication process from the past, and the innovation of the packaging technology is turned to. As the demand for high-performance computing (HPC) chips is increasing dramatically, data centers and cloud computing infrastructure are becoming critical, especially AI and 5G devices that can support new high-performance technologies. However, the challenge faced by these devices is that the high performance of the devices and their multi-core architecture is accompanied by the problems of high broadband density and low latency. Heterogeneous integration is a factor of the surge in demand for HPC chips, and opens up a new page for 3D (three-dimensional) IC packaging technology. Through Silicon Via (TSV) technology realizes vertical interconnection between Die and Die, interconnects between chips by punching holes on Si (silicon) without wire bonding, effectively shortens interconnect line length, reduces signal transmission delay and loss, improves signal speed and bandwidth, reduces power consumption and packaging volume, and is a chip system-in-package realizing multifunction, high performance, high reliability, lighter, thinner and smaller. Because the 3D TSV packaging process is still immature in design, mass production, testing, supply chain, etc., and the process cost is high, and the problem of internal packaging of the 3D TSV packaging technology can cause the Pump out (Pump out) phenomenon of the high thermal conductive material layer, thereby affecting the overall performance of the chip.

Therefore, how to solve the above-mentioned problems and disadvantages of the prior art is a subject to be developed by related industries.

Disclosure of utility model

The utility model mainly aims to provide a leakage-proof heat dissipation improved structure of a high-heat-conductivity-coefficient material.

In order to achieve the above-mentioned objective, the present utility model provides a leakage-proof heat dissipation improvement structure of high thermal conductivity material, especially for dissipating heat from a heat source on a chip body, the leakage-proof heat dissipation improvement structure of high thermal conductivity material comprises an insulating film layer, a high thermal conductivity thermal interface material layer, a first flexible material composite layer, a second flexible material composite layer and a heat sink. The insulating film layer is arranged on the heat source, and the central area of the insulating film layer is provided with a film opening. The high-heat-conductivity thermal interface material layer is arranged on the opening of the membrane. The first flexible material composite layer is arranged on the insulating film layer, the central area of the first flexible material composite layer is a first opening, and two side surfaces of the first flexible material composite layer are sticky. And the second flexible material composite layer is arranged below the insulating film layer, and the central area of the second flexible material composite layer is provided with a second opening, wherein two side surfaces of the second flexible material composite layer are provided with adhesiveness. The radiator is arranged on the first flexible material composite layer and is adhered to the first flexible material composite layer, a boss is arranged at the bottom of the radiator, a plurality of storage grooves are formed in the boss, the thickness of the boss is 0.1-10 mm, and the depth of the storage grooves is 0.01-1 mm.

In an embodiment of the utility model, the size of the boss corresponds to the size of the first opening.

In one embodiment of the present utility model, each side dimension of the diaphragm opening, the first opening and the second opening is 0.1-1 mm larger than each side dimension of the heat source.

In an embodiment of the present utility model, an edge of the insulating film layer has an oblique angle with a polarity position of the heat source for identifying an installation direction, and a handle is provided for tearing the insulating film layer.

In an embodiment of the present utility model, the first flexible material composite layer is formed by combining a first gum layer, a first foam layer and a second gum layer from top to bottom.

In an embodiment of the present utility model, the second flexible material composite layer is formed by combining a third back adhesive layer, a second foam layer and a fourth back adhesive layer from top to bottom.

In an embodiment of the present utility model, each of the plurality of storage grooves has a square shape.

In one embodiment of the present utility model, each of the plurality of storage grooves has a circular shape.

In an embodiment of the present utility model, each of the plurality of storage grooves has a hexagonal shape.

In an embodiment of the utility model, the improved structure for preventing leakage and heat dissipation of the material with high thermal conductivity further comprises an insulating cured adhesive, insulating paste or insulating paste, which is disposed on the small part on the chip body beside the heat source and is disposed around the thermal interface material layer with high thermal conductivity, the first flexible material composite layer and the second flexible material composite layer for coating.

In summary, the improved structure for leakage prevention and heat dissipation of high thermal conductivity material provided by the utility model can achieve the following effects:

1. the leakage risk of the high-heat-conductivity material layer during assembly caused by electric conduction of the part circuit is reduced;

2. The problem that the high heat conduction material is pumped out (Pump out) due to the internal packaging of the 3D TSV packaging technology is solved;

3. the problem of frequency reduction of the high-power chip during operation is solved;

4. The problem of overhigh temperature during over-frequency is solved;

5. the problem of unstable heat dissipation during repeatability test is solved; and

6. And the reliability of the high-heat-conductivity material in practical use is improved.

The objects, technical contents, features and effects achieved by the present utility model will be more readily understood by the following detailed description of specific embodiments.

Drawings

Fig. 1 is a schematic perspective view of an improved structure for preventing leakage and heat dissipation of a material with high thermal conductivity according to the present utility model.

Fig. 2 is a schematic perspective exploded view of the improved structure of the high thermal conductivity material of the present utility model.

Fig. 3 is a cross-sectional view of a leak-proof heat dissipation improvement structure of the high thermal conductivity material of the present utility model.

FIG. 4 is a schematic diagram of a first embodiment of a high thermal conductivity thermal interface material layer of the improved structure of leakage prevention and heat dissipation of high thermal conductivity materials of the present utility model.

Fig. 5 is a first embodiment of a radiator with improved structure of leakage-proof heat dissipation of high thermal conductivity material according to the present utility model.

Fig. 6 is a diagram showing a first embodiment of a radiator with improved structure of leakage-proof heat dissipation of high thermal conductivity material according to the present utility model.

Fig. 7 is a diagram showing a first embodiment of a radiator with improved structure of leakage-proof heat dissipation of high thermal conductivity material according to the present utility model.

FIG. 8 is a schematic illustration of a high thermal conductivity thermal interface material layer underlying an insulating film layer of the improved leak-proof and thermal dissipation structure of high thermal conductivity materials of the present utility model.

FIG. 9 is a schematic diagram of a high thermal conductivity thermal interface material layer of the improved structure of leakage prevention and heat dissipation of high thermal conductivity materials of the present utility model disposed on an insulating film layer.

FIG. 10 is a schematic diagram of an implementation method of the improved structure of leakage prevention and heat dissipation of the material with high thermal conductivity according to the present utility model.

FIG. 11 is another schematic diagram of an implementation method of the improved structure of leakage prevention and heat dissipation of the high thermal conductivity material of the present utility model.

FIG. 12 is a cross-sectional view of another embodiment of a leak-proof heat dissipation improvement structure of a high thermal conductivity material of the present utility model.

Reference numerals illustrate: 100-improved leakage-proof heat dissipation structure of high-heat-conductivity material; 110-chip body; 120-heat source; 130-an insulating film layer; 130A-a diaphragm opening; 130B-diaphragm bevel; 140-a high thermal conductivity thermal interface material layer; 150-a first flexible material composite layer; 150A-a first opening; 151-a first backsize layer; 152-a first foam layer; 153-a second backsize layer; 160-a second flexible material composite layer; 160A-a second opening; 161-a third backsize layer; 162-a second foam layer; 163-fourth backsize layer; 170-a heat sink; 172-boss; 172A-a storage recess; 180-insulating curing glue, insulating paste or insulating mud.

Detailed Description

In order to solve the problems of current leakage and insufficient heat dissipation of the existing heat dissipation structure and the problem of internal packaging of the 3D TSV packaging technology, the high heat conduction material is pumped out (Pump out), and the inventors have studied and developed for many years, so as to improve the problem of the existing product, and subsequently, the utility model will be described in detail how to achieve the most efficient functional requirement by using a leakage-proof heat dissipation improved structure of the high heat conduction coefficient material.

Referring to fig. 1 to 4 and fig. 10 to 11, fig. 1 is a schematic perspective view of a leak-proof heat dissipation improvement structure of a high thermal conductivity material according to the present utility model. Fig. 2 is a schematic perspective exploded view of the improved structure of the high thermal conductivity material of the present utility model. Fig. 3 is a cross-sectional view of a leak-proof heat dissipation improvement structure of the high thermal conductivity material of the present utility model. FIG. 4 is a schematic diagram of a first embodiment of a high thermal conductivity thermal interface material layer of the improved structure of leakage prevention and heat dissipation of high thermal conductivity materials of the present utility model. FIG. 10 is a schematic diagram of an implementation method of the improved structure of leakage prevention and heat dissipation of the material with high thermal conductivity according to the present utility model. FIG. 11 is another schematic diagram of an implementation method of the improved structure of leakage prevention and heat dissipation of the high thermal conductivity material of the present utility model. As shown, in the embodiment of the present utility model, the heat source 120 is a chip or Lid (metal cap) or IHS (integrated heat spreader ). However, some leakage conditions may be usually caused on the surface of the chip body 110 due to internal electronic components, and the embodiment of the utility model proposes a solution to effectively solve the leakage problem. As will be further described below. The improved structure 100 of the present utility model is particularly suitable for heat dissipation of the heat source 120 on the chip body 110. The improved structure 100 for preventing leakage and dissipating heat of high thermal conductivity material comprises an insulating film layer 130, a high thermal conductivity thermal interface material layer 140, a first flexible material composite layer 150, a second flexible material composite layer 160 and a heat sink 170. The central area of the insulating film layer 130 is a film opening 130A, the insulating film layer 130 is disposed on the heat source 120, and the edge of the insulating film layer 130 has at least one mounting hole for mounting or alignment, as shown in fig. 11, and the insulating film layer 130 may be shaped and provided with opposite mounting holes in other embodiments, wherein the insulating film layer 130 may be rubber sponge, foam, fireproof material or compressible material. In addition, as shown in fig. 10, the edge (the polar position near the heat source 120) of the insulating film layer 130 has a film bevel 130B as a recognition to recognize the mounting direction, and a handle to tear off the application point of the insulating film layer. The body of the high thermal conductivity thermal interface material layer 140 is close to the heat source 120 and is located on the chip body 110, where the high thermal conductivity thermal interface material layer 140 is disposed on the membrane opening 130A, and the high thermal conductivity thermal interface material layer 140 may be a liquid metal layer, but is not limited thereto. The first flexible material composite layer 150 is disposed on the insulating film layer 130, and a central area of the first flexible material composite layer 150 is a first opening 150A, wherein two sides of the first flexible material composite layer 150 have adhesiveness, and the first flexible material composite layer 150 may be rubber sponge, foam, fireproof material or compressible material, but is not limited thereto. The second flexible material composite layer 160 is disposed under the insulating film layer 130, and a central area of the second flexible material composite layer 160 is a second opening 160A, wherein two sides of the second flexible material composite layer 160 have adhesiveness, and the second flexible material composite layer 160 may be rubber sponge, foam, fireproof material or compressible material, but is not limited thereto. The heat sink 170 is disposed on the first flexible material composite layer 150 and adhered to the first flexible material composite layer 150, the bottom of the heat sink 170 has a boss 172, and the boss 172 has a plurality of storage grooves 172A thereon, wherein the thickness of the boss 172 is 0.1-10 mm and the depth of the storage grooves 172A is 0.01-1 mm.

It is noted that the size of the boss 172 corresponds to the size of the first opening 150A. The dimensions of each of the diaphragm opening 130A, the first opening 150A and the second opening 160A are respectively 0.1-1 mm larger than the dimensions of each side of the heat source 120. In addition, the first flexible material composite layer 150 is formed by combining a first back adhesive layer 151, a first foam layer 152 and a second back adhesive layer 153 from top to bottom. The second flexible material composite layer 160 is formed by combining a third adhesive layer 161, a second foam layer 162 and a fourth adhesive layer 163 from top to bottom. The first foam layer 152 and the second foam layer 162 may be made of rubber sponge, fireproof material or compressible material, in addition to the foam material itself.

It should be noted that, please refer to fig. 2 to fig. 7 simultaneously, fig. 5 is a first embodiment of a radiator with improved structure of leakage-proof heat dissipation of high thermal conductivity material of the present utility model. Fig. 6 is a diagram showing a first embodiment of a radiator with improved structure of leakage-proof heat dissipation of high thermal conductivity material according to the present utility model. Fig. 7 is a diagram showing a first embodiment of a radiator with improved structure of leakage-proof heat dissipation of high thermal conductivity material according to the present utility model. The bottom of the heat sink 170 of the present utility model has a specific structure, which will be further described below. The bottom of the heat sink 170 has a boss 172, and the boss 172 has a plurality of storage grooves 172A, wherein the thickness of the boss 172 is 0.1-10 mm and the depth of the storage grooves 172A is 0.01-1 mm. It is noted that the size of the boss 172 corresponds to the size of the first opening 150A. The dimensions of each of the diaphragm opening 130A, the first opening 150A and the second opening 160A are respectively 0.1-1 mm larger than the dimensions of each side of the heat source 120. The protrusion 172 may act to allow the plurality of storage recesses 172A to be more closely adjacent to the layer 140 of high thermal conductivity thermal interface material, i.e., in close contact during assembly or packaging. As shown in fig. 5 to 7, the plurality of storage grooves 172A of the boss 172 of the heat sink 170 may have a square, circular, hexagonal groove or other polygonal appearance, but is not limited thereto, and any storage groove is within the spirit of the present utility model. For example, in the embodiment of fig. 2 of the present utility model, the shape of each of the plurality of storage grooves 172A of the heat sink 170 is a square-shaped exemplary embodiment, which is taken as an illustration and the depth of the storage groove 172A in the embodiment of the present utility model is 0.01 to 1mm. The remaining storage grooves 172A, which are hexagonal (fig. 5), circular (fig. 7) or stepped (fig. 7), are similarly verified. The heat sink 170 in the embodiment of the utility model may be a fin type heat sink, but is not limited thereto. In practice, the heat sink 170 may also be combined with the improved structure 100 of high thermal conductivity material using other fasteners. In the semiconductor package process, the heat spreader 170 may be surface bonded to the high thermal conductivity thermal interface material layer 140 by the industrial adhesive. The improved structure 100 for leakage prevention and heat dissipation of high thermal conductivity material can prevent side leakage of liquid metal, and can solve the problem of over-high temperature during over-frequency.

Furthermore, the improved structure 100 for preventing leakage and dissipating heat of high thermal conductivity material further includes an insulating and curing adhesive 180, wherein the insulating and curing adhesive 180 is disposed between the heat spreader 170 and the chip body 110 and is disposed around the high thermal conductivity thermal interface material layer 140, the first flexible material composite layer 150 and the second flexible material composite layer 160 for being wrapped. The insulating and curing glue 180 can function as a retaining wall to prevent side leakage of the liquid metal. The insulating curing glue 180 (this is an insulating layer, which may also be an insulating paste, an insulating paste or an industrial adhesive) may be a rubber sponge, foam, a fire-retardant material or a compressible material. Further, when the thermal interface material layer 140 begins to melt at a temperature exceeding 60 degrees celsius (or exceeding 45 degrees celsius), the melted liquid metal of the thermal interface material layer 140 flows into the storage grooves 172A due to the retaining wall of the insulating and curing glue 180, and further, the plurality of storage grooves 172A can have enough space to accommodate the melted thermal interface material layer 140. The thermal interface material layer 140 with high thermal conductivity changes phase with temperature, such as changing solid state into liquid state (thick liquid state or gel state), but its volume increases by 1.01-1.05 times during phase change. Therefore, by utilizing the characteristics of the reservoir, the insulating and curing glue 180, the insulating paste or the insulating paste on the chip can be stored in the desired place (the high temperature resistant foam layer or the plurality of storage grooves 172A) by using a storage volume blocking method, so that the chip can be used in a pre-determined amount when the temperature of the chip changes. In order to improve the heat dissipation efficiency, the high thermal conductivity thermal interface material layer 140 with a higher thermal conductivity is required to be used, and the embodiment of the utility model can prevent the problem of the short circuit of the motherboard caused by overflow amount during the phase change of the high thermal conductivity thermal interface material layer 140, and can also solve the unstable heat dissipation phenomenon caused by uneven heat generating position of the heat source, so that the high thermal conductivity of the high thermal conductivity thermal interface material layer 140 can be exerted. As can be seen from the above description, the present utility model is directed to solving the problem that the high thermal conductivity interface material THERMAL INTERFACE MATERIAL is not sticky or has low viscosity, and is prone to overflow or pump out.

Next, referring to fig. 8 and 9, fig. 8 is a schematic diagram of a high thermal conductivity thermal interface material layer of the improved structure of leakage prevention and heat dissipation of high thermal conductivity material of the present utility model below an insulating film layer.

FIG. 9 is a schematic diagram of a high thermal conductivity thermal interface material layer of the improved structure of leakage prevention and heat dissipation of high thermal conductivity materials of the present utility model disposed on an insulating film layer. In another embodiment of the present utility model, a layer 140 of high thermal conductivity thermal interface material may be positioned under the insulating film layer 130, as shown in FIG. 8. In yet another implementation of the present utility model, a layer 140 of high thermal conductivity thermal interface material may be positioned over the insulating film layer 130, as shown in FIG. 9.

Please refer to fig. 12, fig. 12 is a cross-sectional view of another embodiment of the improved structure of the high thermal conductivity material of the present utility model. Because the 3D TSV packaging process is still immature in terms of design, mass production, testing, and supply chain, and the process cost is high, and the problem of internal packaging of the 3D TSV packaging technology can cause the high thermal conductivity thermal interface material layer 140 to generate a Pump out (Pump out) phenomenon, thereby affecting the overall performance of the chip. As can be seen from fig. 10, the problem of the internal packaging of the 3D TSV packaging technology can be effectively solved by manufacturing the boss 172 at the bottom of the heat spreader 170 into a plurality of storage grooves 172A, and then sealing with an insulating curing glue, an insulating paste or with an industrial adhesive.

In summary, the improved structure for leakage prevention and heat dissipation of high thermal conductivity material provided by the utility model can achieve the following effects:

1. the leakage risk of the high-heat-conductivity material layer during assembly caused by electric conduction of the part circuit is reduced;

2. The problem that the high heat conduction material is pumped out (Pump out) due to the internal packaging of the 3D TSV packaging technology is solved;

3. the problem of frequency reduction of the high-power chip during operation is solved;

4. The problem of overhigh temperature during over-frequency is solved;

5. the problem of unstable heat dissipation during repeatability test is solved; and

6. And the reliability of the high-heat-conductivity material in practical use is improved.

The foregoing description is only of the preferred embodiment of the utility model and is not intended to limit the scope of the utility model. It is therefore intended that all such equivalent variations or modifications as fall within the scope of the utility model as defined in the appended claims be embraced thereby.

Claims (11)

1. The utility model provides a leak protection heat dissipation improvement structure of high coefficient of thermal conductivity material for dispel the heat to a heat source on a chip body, its characterized in that, this leak protection heat dissipation improvement structure of high coefficient of thermal conductivity material includes:

an insulating film layer with a film opening in the central region and disposed above the heat source;

A high thermal conductivity thermal interface material layer, which is close to the heat source and is located on the chip body, wherein the high thermal conductivity thermal interface material layer is arranged on the diaphragm opening;

The first flexible material composite layer is arranged on the insulating film layer, the central area of the first flexible material composite layer is a first opening, and two side surfaces of the first flexible material composite layer are provided with adhesiveness;

A second flexible material composite layer arranged below the insulating film layer, wherein the central area of the second flexible material composite layer is a second opening, and two side surfaces of the second flexible material composite layer are provided with adhesiveness;

The radiator is arranged on the first flexible material composite layer and is adhered to the first flexible material composite layer, a boss is arranged at the bottom of the radiator, and a plurality of storage grooves are formed in the boss, wherein the thickness of the boss is 0.1-10 mm, and the depth of each storage groove is 0.01-1 mm.

2. The improved structure of claim 1, wherein the boss is sized to correspond to the size of the first opening.

3. The improved structure of claim 1, wherein each side of the membrane opening, the first opening and the second opening is sized to be 0.1-1 mm larger than each side of the heat source.

4. The improved structure of claim 1, wherein the insulating film layer has at least 1 or more mounting/alignment holes on its edge for mounting or alignment.

5. The improved structure of claim 1, wherein the edge of the insulating film layer has an oblique angle with the polarity of the heat source for identifying the mounting direction, and a pull tab for tearing off the insulating film layer.

6. The improved structure of claim 1, wherein the first flexible material layer comprises a first adhesive layer, a first foam layer and a second adhesive layer from top to bottom.

7. The improved structure of claim 1, wherein the second flexible material layer comprises a third adhesive layer, a second foam layer and a fourth adhesive layer from top to bottom.

8. The improved structure of claim 1, wherein each of the plurality of storage grooves has a square shape.

9. The improved structure of claim 1, wherein each of the plurality of storage grooves has a circular shape.

10. The improved structure of claim 1, wherein each of the plurality of storage grooves has a hexagonal shape.

11. The improved structure of claim 1, further comprising an insulating cured adhesive, an insulating paste or an insulating paste, wherein the insulating paste comprises a rubber sponge, foam, a fireproof material or a compressible material, which is disposed on the small part of the chip body beside the heat source and is disposed around the high thermal conductivity thermal interface material layer, the first flexible material composite layer and the second flexible material composite layer for coating.