TWM595885U - Circuit pattern inspection device - Google Patents
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- TWM595885U TWM595885U TW108217501U TW108217501U TWM595885U TW M595885 U TWM595885 U TW M595885U TW 108217501 U TW108217501 U TW 108217501U TW 108217501 U TW108217501 U TW 108217501U TW M595885 U TWM595885 U TW M595885U
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- 238000007689 inspection Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 238000001514 detection method Methods 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000001179 sorption measurement Methods 0.000 claims description 7
- 239000012855 volatile organic compound Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229920003303 ion-exchange polymer Polymers 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000003456 ion exchange resin Substances 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims 1
- 238000000034 method Methods 0.000 description 10
- 238000001459 lithography Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
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Abstract
本新型為提供一種線路圖案檢測裝置,用於檢測形成於半導體基材的線路圖案,該線路圖案檢測裝置包含一光源單元及一接收單元,其中,該光源單元具有一位於該線路圖案的上方的第一光源,該接收單元具有一位於該線路圖案的上方並用於接收來自該線路圖案的第一影像圖案的第一接收器,及一位於該線路圖案的一側用於接收來自該線路圖案的第二影像圖案的第二接收器,定義一條通過該半導體基材的法線,該第二接收器與該法線成一夾角斜向設置。The present invention is to provide a circuit pattern detection device for detecting a circuit pattern formed on a semiconductor substrate. The circuit pattern detection device includes a light source unit and a receiving unit, wherein the light source unit has a position above the circuit pattern The first light source, the receiving unit has a first receiver located above the line pattern for receiving the first image pattern from the line pattern, and a side located on the side of the line pattern for receiving the line pattern The second receiver of the second image pattern defines a normal line passing through the semiconductor substrate, and the second receiver is disposed obliquely at an angle with the normal line.
Description
本新型是有關於一種檢測裝置,特別是指一種用於檢測形成於半導體基材的圖案化(patterning)線路的線路圖案檢測裝置。The present invention relates to a detection device, in particular to a line pattern detection device for detecting patterned lines formed on a semiconductor substrate.
隨著電子產品發展功能需求越來越高以及元件越來越輕薄短小的要求,半導體晶片的尺寸及線寬要求也越來越小,以期能符合所需之半導體元件的尺寸及性能的要求。然而,半導體晶片的線寬是否能達成要求,尤其是目前在半導體晶片的線寬製程已經要求到奈米等級時,黃光微影則是一項關鍵技術。With the increasing functional requirements of electronic products and the requirements of lighter, thinner and shorter components, the size and line width of semiconductor chips are also becoming smaller and smaller, in order to meet the requirements of the size and performance of the required semiconductor devices. However, whether the line width of semiconductor chips can meet the requirements, especially when the line width process of semiconductor chips has been required to the nano-level, yellow light lithography is a key technology.
黃光微影是一項微縮技術,是透過利用一具有預定圖案的光罩作為遮罩,以在一半導體基材上形成與該遮罩的圖案對應的線路圖案。之後,即會再以該線路圖案為基準進行後續的製程,然後,再進行不同的積層製程而製得所所需的半導體元件。因此,微影後形成的線路圖案的線寬、尺寸或形狀產生誤差或缺陷時,將會影響後續製程以及最終製得的元件特性。因此,每一次微影製程後都會針對形成的線路圖案進行檢測,確保形成之線路圖案的精確度,以避免影響後續製程。Yellow light lithography is a miniaturization technology, which uses a photomask with a predetermined pattern as a mask to form a circuit pattern corresponding to the pattern of the mask on a semiconductor substrate. After that, the subsequent process is performed based on the circuit pattern, and then, different lamination processes are performed to obtain the required semiconductor device. Therefore, when an error or defect occurs in the line width, size or shape of the circuit pattern formed after the lithography, it will affect the subsequent process and the characteristics of the final device. Therefore, after each lithography process, the formed circuit pattern is inspected to ensure the accuracy of the formed circuit pattern, so as not to affect the subsequent process.
目前用於檢測微影後形成於半導體基材之線路圖案的方式為利用單一取像裝置,並透過讓半導體基材傾斜角度或者承載基材的承載座傾斜角度,取得該線路圖案於不同角度的影像,以完整的檢測該線路圖案的圖案品質。The current method for detecting the circuit pattern formed on the semiconductor substrate after the lithography is to use a single imaging device, and obtain the circuit pattern at different angles by tilting the semiconductor substrate or the carrier base. Image, to fully detect the pattern quality of the circuit pattern.
因此,本新型之目的,即在提供一種用於檢測形成於半導體基材的圖案化線路的線路圖案檢測裝置。Therefore, the purpose of the present invention is to provide a circuit pattern detection device for detecting patterned lines formed on a semiconductor substrate.
於是,本新型該線路圖案檢測裝置包含一光源單元,及一接收單元。Therefore, the circuit pattern detection device of the present invention includes a light source unit and a receiving unit.
該光源單元具有一位於該線路圖案的上方的第一光源。The light source unit has a first light source located above the line pattern.
該接收單元具有一位於該線路圖案的上方並用於接收來自該線路圖案的第一影像圖案的第一接收器,及一位於該線路圖案的一側用於接收來自該線路圖案的第二影像圖案的第二接收器,定義一條通過該半導體基材的法線,該第二接收器與該法線成一夾角傾斜設置。The receiving unit has a first receiver located above the line pattern for receiving the first image pattern from the line pattern, and a side located on the side of the line pattern for receiving the second image pattern from the line pattern The second receiver defines a normal line passing through the semiconductor substrate, and the second receiver is inclined at an angle with the normal line.
本新型之功效在於:透過於不同角度分別設置不同的側向接收器,因此,可無須轉動半導體基材即可同時接收該線路圖案兩個以上不同角度的影像資料並據以檢測。The effect of the present invention lies in: by setting different lateral receivers at different angles, therefore, it is possible to simultaneously receive and detect image data of more than two different angles of the circuit pattern without rotating the semiconductor substrate.
在本新型被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。此外,圖式中僅為表示元件之間的空間關係,並非各元件的實質尺寸或相對比例關係。Before the present invention is described in detail, it should be noted that in the following description, similar elements are denoted by the same number. In addition, the drawings only show the spatial relationship between the elements, not the actual size or relative proportional relationship of the elements.
本新型線路圖案檢測裝置是可用於檢測形成於一半導體基材上的圖案化線路,於下述實施例中是以該圖案化線路為經由黃光、蝕刻等製程所形成的線路圖案為例,然實際實施時該線路圖案並不以此為限。The novel circuit pattern detection device can be used to detect a patterned circuit formed on a semiconductor substrate. In the following embodiments, the patterned circuit is an example of a circuit pattern formed through yellow light, etching and other processes. However, the actual circuit pattern is not limited to this.
參閱圖2,本新型線路圖案檢測裝置的一第一實施例是用於檢測形成於一半導體基材11上的線路圖案12。Referring to FIG. 2, a first embodiment of the novel circuit pattern detection device is used to detect the
該線路圖案檢測裝置包含一光源單元2、一接收單元3、一支撐架4,及一處理單元5。The circuit pattern detecting device includes a
該光源單元2具有一位於該半導體基材11的線路圖案12上方的第一光源21,其中,該第一光源21可以是線性光源或是點狀光源,且該第一光源21可以選自發出白光,或是例如紅光、綠光等具預定波長的光的光源。The
該接收單元3具有一位於該線路圖案12的頂面上方,用於接收來自該線路圖案12的第一影像圖案的第一接收器31,及一位於該線路圖案12的一側,與該半導體基材11成一角度設置並用於接收來自該線路圖案12的第二影像圖案的第二接收器32。其中,該第一、二接收器31、32可以是顯微鏡或相機,且可以是亮視野(light field)或暗視野(dark field)的顯微鏡或相機。The receiving unit 3 has a
詳細的說,定義一條通過該半導體基材11的法線N,該第二接收器32與該法線N的夾角為第一角度θ1,該第一角度θ1大於0度,且不大於90度。較佳地,該第一角度θ1介於10度~80度。又,考慮所接收之影像圖案處理的複雜度,更佳地,該第一角度θ1介於15度~60度。In detail, a normal N passing through the
以該線路圖案12具有多個沿第一方向X排列的第一圖案121,且每一個第一圖案121沿一與該第一方向X垂直並平行於該半導體基材11表面的第二方向Y延伸為例說明,該第二接收器32可位於該第一方向X並設置於該等第一圖案121側邊,藉由於該線路圖案12的側邊且與該線路圖案12成一角度傾斜設置的該第二接收器32,因此,可利用該第一、二接收器31、32配合接收來自該線路圖案12的正向及側向的第一、二影像圖案,無須像習知需令該半導體基材11傾斜一角度後才可得到該線路圖案12(該等第一圖案121)的側邊影像。此外,當要得到該等第一圖案121的不同側邊或同一側邊不同角度的影像圖案時,僅需平面轉動該半導體基材11即可。The
要再說明的是,當該線路圖案12為具有多種不同方向排列的圖案時,也可藉由平面轉動該半導導體基材11而得到不同排列方向之圖案的側邊影像。It should be further explained that, when the
該支撐架4用於固定該光源單元2及該接收單元3。該支撐架4可以是一片成弧形或是倒U型的支撐片41,也可以是具有多片各自分離並支撐固定該光源單元2及該接收單元3的支撐片41,只要是可用以固定該光源單元2及該接收單元3即可,並無需別限定。於本實施例中,該支撐架4是以一片概成倒U型的支撐片41為例說明,然實際實施時並不以此為限。The supporting
參閱圖2,要說明的是,該第一實施例的光源單元2也可以再具有一第二光源22,該第二光源22可對應設置與該第二接收器32反向的位置,用以提供該第二接收器32檢測所需的光。該第二光源22也可以是選自可發出白光,或是例如紅光、綠光等具預定波長的光,且與該第一光源21可以是具有相同波長波或不同波長。Referring to FIG. 2, it should be noted that the
由於不同波長光源對不同節距(pitch)具有不同的干涉、繞射結果,因此,透過該第一、二光源21、21的波長選擇可對該線路圖案12因黃光曝光製程對焦誤差造成的散焦(defocus)或是該線路圖案12不同形態的缺陷具有更佳的辨識度。Because different wavelength light sources have different interference and diffraction results for different pitches, the wavelength selection through the first and
該處理單元5與該接收單元3訊號連接,用以將接收自不同接收器(第一、二接收器31、32)的影像圖案經轉向處理後比對;或是將接收自不同接收器(第一、二接收器31、32)的影像圖案與該線路圖案12的標準影像圖案比對,或是與取自另一相同線路圖案得到的影像圖案各自進行比對,以得到該線路圖案12的檢測結果。The
參閱圖3,本新型線路圖案檢測裝置的一第二實施例,其結構大致與該第一實施例相同,不同處在於該第二實施例的接收單元3還具有一第三接收器33。Referring to FIG. 3, a second embodiment of the novel circuit pattern detection device has substantially the same structure as the first embodiment, except that the receiving unit 3 of the second embodiment further has a
該第三接收器33與通過該半導體基材11的該法線N成一第二角度θ2傾斜設置,用於接收來自該線路圖案12的第三影像圖案的第三接收器33。The
該第三接收器33可與該第二接收器32位於同側或不同側,且該第一角度θ1與該第二角度θ2也可視該第三接收器33與該第二接收器32的位置關係而可為相同或不同。The
具體的說,當該第三接收器33與該第二接收器32位於不同側時,例如該第三接收器33及該第二接收器32分別位於該等第一圖案121的不同側邊時,該第一角度θ1與該第二角度θ2可為相同或不同。藉由將該第二接收器32與該第三接收器33設置於對應該線路圖案12的不同位置,可無須轉動或像習知須傾斜該半導體基材11,即可透過該第一、二、三接收器31、32、33接收得到該線路圖案12的正面及側面的影像。而透過該第二接收器32及該第三接收器33與該半導體基材11的夾角(第一角度θ1、第二角度θ2)安排,則可進一步接收該線路圖案12的側面於不同角度的影像圖案。Specifically, when the
此外,當該第二接收器32與該第三接收器33位於同側時,則可利用讓該第一角度θ1與該第二角度θ2設為不同。如此,即可藉由該第一接收器31,以及設置於同側但不同角度的該第二接收器32與該第三接收器33,接收得到該線路圖案12的正面及同一側面且不同角度位置的影像。因此,透過比對該第二接收器32與該第三接收器33接收得到的圖案影像,可更完整的檢測該線路圖案12。In addition, when the
此外,要說明的是,透過平面轉動該半導體基材11,改變該第二接收器32與該第三接收器33與該線路圖案12的角度,則可透過該第二接收器32與該第三接收器33接收該線路圖案12於不同排列方向之圖案的側邊影像圖案,或是同一圖案來自不同角度的影像圖案,以進一步檢測該線路圖案12。In addition, it should be noted that by rotating the
於一些實施例中,該第一、二、三接收器31、32、33的俯視平面構成一直角三角形,且該第一接收器31位於直角的頂點。In some embodiments, the top-view planes of the first, second, and
此外,要說明的是,前述該第二實施例的光源單元2也可以再包含一第三光源23。該第三光源23與該第三接收器33為彼此反向設置,該第三光源23也可以是選自可發出白光,或是例如紅光、綠光等具預定波長的光,且該第三光源23與該第一、二光源21、22也可以分別具有相同波長波或不同波長。透過該第一、二二、三光源21、22、23可提供該接收單元3充足的感測光源以及更有彈性的感測波長選擇,以對該線路圖案12可具有更佳的辨識結果。In addition, it should be noted that the
參閱圖4,於一些實施例中,本新型的線路圖案檢測裝置還可包含一可用以吸附揮發性有機物的吸附單元6,以避免該線路圖案12於照光過程產生的揮發性有機物或是環境中的揮發性有機物汙染該光源單元2及該接收單元3,而造成檢測設備損毀或是檢測誤差的問題。Referring to FIG. 4, in some embodiments, the circuit pattern detection device of the present invention may further include an adsorption unit 6 that can adsorb volatile organic compounds to prevent the
該吸附單元6選自包含例如活性碳等多孔性吸附材、離子交換樹脂,及高分子聚合物的其中至少一種,且鄰近該光源單元2及該接收單元3的其中至少一者的周圍設置,以有效吸附接近該光源單元2及該接收單元3的揮發性有機物。The adsorption unit 6 is selected from at least one of porous adsorption materials such as activated carbon, ion exchange resin, and polymer, and is disposed adjacent to at least one of the
綜上所述,本新型的線路圖案檢測裝置透過設置於該線路圖案12上方的第一接收器31,以及設置於該線路圖案12側面的第二接收器32及/或第三接收器33的配合,因此,可無須令該半導體基材11傾斜即可用以接收該線路圖案12的不同側邊的影像圖案,此外,透過側向接收器(第二接收器32及/或第三接收器33)的設置角度安排,還可接收來自該線路圖案12不同角度的影像圖案,而得以進一步檢測該線路圖案12,確實可達成本新型之目的。In summary, the circuit pattern detection device of the present invention passes through the
惟以上所述者,僅為本新型之實施例而已,當不能以此限定本新型實施之範圍,凡是依本新型申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本新型專利涵蓋之範圍內。However, the above are only examples of the new model. When the scope of the new model cannot be limited by this, any simple equivalent changes and modifications made according to the patent application scope and patent specification content of the new model are still regarded as Within the scope of this new patent.
11:半導體基材 33:第三接收器 12:線路圖案 4:支撐架 2:光源單元 5:處理單元 21:第一光源 6:吸附單元 22:第二光源 X:第一方向 23:第三光源 Y:第二方向 3:接收單元 N:法線 31:第一接收器 θ1:第一角度 32:第二接收器 θ1:第二角度11: Semiconductor substrate 33: Third receiver 12: Line pattern 4: Support frame 2: Light source unit 5: Processing unit 21: The first light source 6: Adsorption unit 22: Second light source X: first direction 23: third light source Y: Second direction 3: receiving unit N: normal 31: The first receiver θ1: first angle 32: Second receiver θ1: second angle
本新型之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是一示意圖,說明本新型線路圖案檢測裝置的一第一實施例; 圖2是一示意圖,說明本新型該第一實施例的光源單元的另一態樣; 圖3是一俯視示意圖,說明本新型線路圖案檢測裝置的第二實施例的第一、二、三接收器的相對位置;及 圖4是一示意圖,說明本新型線路圖案檢測裝置還具有吸附單元的態樣。 Other features and functions of the present invention will be clearly presented in the embodiments with reference to the drawings, in which: FIG. 1 is a schematic diagram illustrating a first embodiment of the novel circuit pattern detection device; 2 is a schematic diagram illustrating another aspect of the light source unit of the first embodiment of the present invention; 3 is a schematic plan view illustrating the relative positions of the first, second, and third receivers of the second embodiment of the novel circuit pattern detection device; and FIG. 4 is a schematic diagram illustrating that the novel circuit pattern detection device further has an adsorption unit.
11:半導體基材 11: Semiconductor substrate
12:線路圖案 12: Line pattern
2:光源單元 2: Light source unit
21:第一光源 21: The first light source
3:接收單元 3: receiving unit
31:第一接收器 31: The first receiver
32:第二接收器 32: Second receiver
4:支撐架 4: Support frame
5:處理單元 5: Processing unit
X:第一方向 X: first direction
Y:第二方向 Y: Second direction
N:法線 N: normal
θ1:第一角度 θ1: first angle
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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TW108217501U TWM595885U (en) | 2019-12-31 | 2019-12-31 | Circuit pattern inspection device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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TW108217501U TWM595885U (en) | 2019-12-31 | 2019-12-31 | Circuit pattern inspection device |
Publications (1)
Publication Number | Publication Date |
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TWM595885U true TWM595885U (en) | 2020-05-21 |
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Family Applications (1)
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TW108217501U TWM595885U (en) | 2019-12-31 | 2019-12-31 | Circuit pattern inspection device |
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TW (1) | TWM595885U (en) |
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2019
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