TWM585988U - Semiconductor device - Google Patents

Abstract

A semiconductor device is disclosed herein, in which the semiconductor device includes a semiconductor island and a semiconductor component. The semiconductor island is located on a first side of a substrate, and includes a crystal part. The crystal part is formed from the semiconductor island that is irradiated by a flash lamp through a transparent region of a mask. The semiconductor island is in amorphous state or micro-crystal state. A channel of the semiconductor component is located in the crystal part.

Description

Semiconductor device

The present disclosure relates to an electronic device, and more particularly to a semiconductor device.

In order to crystallize a semiconductor, in general, considering the internal temperature of the substrate, an Excimer Laser Annealing (ELA) process is a more commonly used technology at present. However, linear scanning excimer laser annealing is limited by the size of the laser light spot and cannot handle a large area at one time, and because the power of each laser light spot is unstable, the uniformity is poor and easy. The problem of mura is generated. Therefore, it is difficult to increase the production capacity and the area of the substrate. Besides the high production cost, the crystal quality and grain size are also not ideal.

In addition, if a semiconductor crystal portion is to be used to fabricate an element, the process used to adjust the combination of the crystal position and the element position and determine the crystal direction need to be adjusted according to the position of the final fabricated element. This method often makes it difficult to grasp the crystallization situation of the device, and the phenomenon of low consistency in crystallization strength.

In order to improve the consistency of the crystalline strength of the crystalline portion used to fabricate a semiconductor device, the present disclosure is to provide a semiconductor device including a semiconductor island region and a semiconductor device. The semiconductor island region is located on the first surface of the substrate and includes a crystalline portion. The semiconductor island region is formed by a flash lamp illuminating the semiconductor island region through the transparent region of the photomask. Amorphous) or Micro-crystal. The channel of the semiconductor element is located in the crystalline portion.

In one embodiment of the present disclosure, the semiconductor island region includes a first portion and a second portion. The second part is located in the projection area of the light transmitting area, and the first part is adjacent to the second part. The crystalline part is formed by the flash lamp illuminating the second part through the light-transmitting area from the first side, and crystallization starts from the interface between the second part and the first part.

In one embodiment of the present disclosure, it further includes a light adjustment layer and an insulating layer. The light adjustment layer is disposed on the first surface of the substrate so as to be located between the substrate and the semiconductor island region. The insulating layer covers the first surface of the substrate and the light adjustment layer, and a semiconductor island region is formed on a surface of the insulating layer. The semiconductor island region is located in a projection region of the light transmitting region, and includes a third part and a fourth part. The light-regulating layer corresponds to the third portion, and the third portion is adjacent to the fourth portion. The crystalline part is formed by the flash unit illuminating the fourth part through the light-transmitting area from the second side of the substrate opposite to the first side, and starting to crystallize from the interface between the fourth part and the third part.

In one embodiment of the present disclosure, the photomask further includes an opaque area or a semi-transparent area.

In summary, the present disclosure uses the pattern design of the semiconductor island area in combination with the pattern design of the photomask and / or the light adjustment layer, and irradiates with a flash to crystallize the semiconductor. The crystal position and direction of the semiconductor element can be designed. It also effectively improves the consistency of crystalline strength, and the formed crystal grain size is large (such as micrometer (μm) grade).

The above description will be described in detail in the following embodiments, and the technical solution of the present disclosure will be further explained.

In order to make the above and other objects, features, advantages, and embodiments of the present disclosure more comprehensible, the description of the attached symbols is as follows:

100, 400‧‧‧ semiconductor devices

110, 120, 130, 310, 410, 420‧‧‧ Semiconductor Island

111, 121, 211, 311‧‧‧ Part I

112, 312‧‧‧ Part II

113, 123, 133, 213‧‧‧ Crystallized part

140, 440‧‧‧ projection area

151‧‧‧ Opaque area of the mask

152‧‧‧ Translucent area of the mask

AA ’, BB’‧‧‧ line segments

170, 470‧‧‧ substrate

S1‧‧‧First side

J1, J2, J3, J4, J5 ‧‧‧ meet

I‧‧‧ Current direction

221, 521, 523‧‧‧ source

222, 522‧‧‧ Drain

411, 421‧‧‧ Part III

422‧‧‧Part 4

413, 423‧‧‧‧Crystalline part

430‧‧‧light adjustment layer

480‧‧‧ Insulation

S2‧‧‧Second Side

1000‧‧‧Manufacturing method

S1002 ~ S1004‧‧‧step

In order to make the above and other objects, features, advantages, and embodiments of the present disclosure more comprehensible, the accompanying drawings are described as follows: FIG. 1 is a schematic top view illustrating a semiconductor device according to an embodiment of the present disclosure; FIG. 2A is a schematic cross-sectional view of a semiconductor device according to an embodiment of the present disclosure; FIG. 2B is a cross-sectional schematic view of a semiconductor device according to an embodiment of the present disclosure; FIG. 2C is a semiconductor device illustrating an embodiment of the present disclosure; 3 is a schematic top view illustrating a semiconductor device according to an embodiment of the present disclosure; FIG. 4 is a schematic view illustrating a semiconductor device according to an embodiment of the present disclosure; FIG. 5 is a schematic diagram illustrating a semiconductor device according to an embodiment of the present disclosure; FIG. 6 is a schematic top view illustrating a semiconductor device according to an embodiment of the present disclosure; FIG. 7A is a schematic view illustrating a semiconductor device according to an embodiment of the present disclosure; 7B is a schematic cross-sectional view of a semiconductor device illustrating an embodiment of the present disclosure; FIG. 7C is a schematic cross-sectional view of a semiconductor device illustrating an embodiment of the present disclosure; FIG. 8 is a schematic view illustrating an embodiment of the present disclosure FIG. 9 is a schematic top view of a semiconductor device; FIG. 9 is a schematic diagram illustrating a semiconductor device according to an embodiment of the present disclosure; and FIG. 10 is a flowchart illustrating a manufacturing method of an embodiment of the present disclosure.

In order to make the description of this disclosure more detailed and complete, reference may be made to the drawings and various embodiments described below. However, the examples provided are not used to limit the scope covered by the new model; the description of the steps is not used to limit the order of its implementation. Any device that is recombined to have an equal effect is covered by the new model. range.

Within the scope of the embodiments and patent applications, There is a special limitation on the article, otherwise "a" and "the" can refer to a single or plural. It will be further understood that the terms "including", "including", "having" and similar terms used in this document indicate the features, regions, integers, steps, operations, elements and / or components recorded therein, but do not exclude It describes or additionally one or more of its other features, regions, integers, steps, operations, elements, components, and / or groups thereof.

About "about", "approximately" or "approximately about" as used herein is generally an error or range of the index value within about 20%, preferably within about 10%, and more preferably It is within about five percent. Unless explicitly stated in the text, the numerical values mentioned are regarded as approximate values, that is, errors or ranges indicated by "about", "about" or "approximately about".

In addition, relative terms such as "lower" or "bottom" and "upper" or "top" are used to describe the relationship between one element and another element shown in the drawings in the text. Relative vocabulary is used to describe different orientations of the device beyond those described in the drawings. It is understandable. For example, if the device in a figure is turned over, the elements would be described as being on the "lower" side of other elements and would be oriented on the "upper" side of the other elements. The exemplary word "down" may include two directions "down" and "up" according to the specific orientation of the drawing.

FIG. 1 is a schematic top view illustrating a semiconductor device 100 according to an embodiment of the present disclosure. The semiconductor device 100 includes semiconductor islands 110, 120, and 130 and a semiconductor device (not shown). As shown in FIG. 1, the semiconductor island regions 110 and 120 are partially located in the projection area 140 of the transparent area of the photomask on the substrate 170, and another part is located in the light-opaque (Opaque The area is on the substrate The projection area on the 170 (the area other than the projection area 140); and the semiconductor island area 130 is completely located in the projection area 140 of the transparent area on the substrate 170. In one embodiment, the semiconductor islands 110, 120, and 130 are in an amorphous or micro-crystal state, which are formed through a deposition process and a patterning process. The deposition process includes, but is not limited to, chemical vapor deposition (CVD), sputtering, or solution based methods.

In order to explain the crystallization process, please refer to FIGS. 2A to 2C, which are schematic cross-sectional views according to the line segment AA ′ direction of FIG. 1. As shown in FIG. 2A, the light emitting area of the flash 160 is larger than the light transmitting area 152 of the mask. The semiconductor island area 110 is located on the first surface S1 of the substrate 170 and includes a first portion 111 and a second portion 112. The second portion 112 corresponds to the projection area 140 of the light-transmitting area 152 of the photomask on the substrate 170. When a flash lamp 160 illuminates the semiconductor device 100 through the photomask, light can pass through the light-transmitting area 152 of the photomask to illuminate the second portion 112 of the semiconductor island region 110, and the second portion 112 thus becomes molten (Fusion ).

In an embodiment, the first portion 111 of the semiconductor island region 110 corresponds to the opaque area 151 of the photomask. Therefore, the first portion 111 is blocked by the opaque area 151 without being illuminated by the flash 160 and maintains its original state. (I.e., non-crystalline or microcrystalline). In another embodiment, the opaque area 151 of the photomask can also be designed as a semi-transparent area. The first portion 111 of the semiconductor island region 110 corresponds to a partially translucent area of the photomask. To decaying flash When the lamp 160 is illuminated, the lattice of the first portion 111 may be rearranged to have a higher mobility than the original state. It should be noted that the substrate 170 may also include other films or structures of the same or different materials, that is, the semiconductor islands 110, 120, 130 may be formed on the films or structures of other materials of the substrate, and the present disclosure is not limited to the semiconductor islands. 110, 120, 130 are formed directly on the substrate.

As shown in FIG. 2B, the flash 160 is stopped, and the molten second portion 112 starts to crystallize from the junction J1 between the second portion 112 and the first portion 111 (as shown by the dotted arrow in the second portion 112 in FIG. 2B). ) To form the crystalline portion 113 shown in FIG. 2C. In one embodiment, the crystalline portion 113 has a characteristic of lateral crystallization.

After the processes shown in FIGS. 2A to 2C, the top view of the semiconductor device 100 is shown in FIG. 3. Portions of the semiconductor island region corresponding to the projection region 140 of the light-transmitting region 152 of the reticle all undergo the irradiation and crystallization process of the flash lamp 160, so crystal portions 113, 123, and 133 are formed. In an embodiment, since the first portions 111 and 121 of the semiconductor island regions 110 and 120 are located outside the projection area 140 and remain in the original state without being irradiated, the second portion 112 which is irradiated by the flashlight 160 and becomes molten. Crystallization starts from the junctions J1 and J2 to form crystalline portions 113 (123), and the crystalline portions 113 and 123 have lateral crystalline characteristics. In another embodiment, since the semiconductor island region 130 is completely located in the projection region 140, when the semiconductor island region 130 is irradiated into the molten state by irradiation with the flash lamp 160, the semiconductor island region 130 crystallizes to form a crystalline portion 133, and the crystalline portion 133 has microcrystalline characteristics.

The crystalline portion produced by the above embodiment can be used to form a half Conductor element. For example, as shown in FIG. 4, the crystalline portion 213 is formed by melting the second portion (the same position as the crystalline portion 213) in a molten state from the junction J3 between the second portion and the first portion 211. A channel of a semiconductor element (such as a thin-film transistor (TFT)) is located in the crystal portion 213 and is located between the source electrode 221 and the drain electrode 222. When the semiconductor device is operating, a current flows from the source 221 to the drain 222, that is, the current direction I. In one embodiment, the current direction I is perpendicular to the junction J3. In another embodiment, the semiconductor device may also be designed such that the current direction I and the junction J3 present other angles than the right angle.

In order to respond to the design of different kinds of semiconductor elements, the shape of the crystalline part can have different shapes through the design of the pattern of the semiconductor island and the pattern of the photomask. In an embodiment, as shown in FIG. 5, the semiconductor island region 310 is circular and includes a first portion 311 and a second portion 312. The first part 311 is not irradiated by the flash 160 and maintains its original state (that is, an uncrystallized state or a microcrystalline state). The second portion 312 is located in a projection area of the light-transmitting area of the mask, and is therefore irradiated by the flash 160 and crystallized to form a crystalline portion in a doughnut shape.

In this way, the present disclosure utilizes a photomask to cooperate with the pattern design of the semiconductor island area, irradiates it with a flash, and crystallizes the semiconductor island area. Compared with excimer laser annealing technology, the present disclosure can achieve high uniformity of crystallization, thereby improving the consistency of crystalline strength, and the formed grain size is larger (for example, micrometer (μm) grade). In addition, due to the reticle design, the semiconductor islands can be classified as completely located in the illuminated area (such as the semiconductor island 130 in Figure 1), and partially in the illuminated area (such as the semiconductor island 110 in Figure 1, 120) and completely outside the unlit area. Therefore, the crystal characteristics can also be determined according to the above classification. For example, as shown in FIG. 3, the crystal region 133 of the semiconductor island region 130 has microcrystalline characteristics, and the crystal regions 113 and 123 of the semiconductor island regions 110 and 120 have lateral crystal characteristics.

In another embodiment, the flash lamp may also irradiate the semiconductor island region from the back surface of the substrate (that is, the second surface S2) to perform crystallization. FIG. 6 is a schematic top view illustrating a semiconductor device 400 according to an embodiment of the present disclosure. The semiconductor device 400 includes semiconductor island regions 410 and 420, a light adjustment layer 430, and a semiconductor element (not shown). As shown in FIG. 6, the semiconductor island region 410 is only partially located in the projection region 440 of the light transmitting region 152 on the semiconductor device 400, and the semiconductor island region 420 is completely located in the projection region 440 of the light transmitting region 152. . In an embodiment, the semiconductor island regions 410 and 420 are in an amorphous state or a microcrystalline state, and are formed through a deposition process and a patterning process.

In order to explain the crystallization process, please refer to FIGS. 7A to 7C, which are schematic cross-sectional views according to the line segment BB ′ direction of FIG. 6. As shown in FIG. 7A, the flash 160 is irradiated from the second surface S2 of the substrate 470, and the light emitting area of the flash 160 is larger than the light transmitting area 152 of the mask. The first surface S1 of the substrate 470 has a light adjustment layer 430, and the insulating layer 480 covers the first surface S1 and the light adjustment layer 430 of the substrate 470. The semiconductor island region 420 is formed on the surface of the insulating layer 480 and includes a third Part 421 and fourth part 422. When the flash 160 irradiates the semiconductor device 400 from the second surface S2 opposite to the first surface S1 of the substrate 470 through the mask, light can pass through the light-transmitting region 152 of the mask to illuminate the light adjustment layer 430 and the semiconductor island region 420. Thanks to the light regulating layer 430 It functions as a reflective layer, a light absorbing layer, or a light attenuation layer. Therefore, the light adjustment layer 430 can completely block the flash 160 from illuminating the third portion 421 of the semiconductor island 420, and maintain the third portion 421 in its original state (that is, (Uncrystalline or slightly crystalline). The fourth portion 422 that is not blocked by the light adjustment layer 430 is changed into a molten state by the flash 160. In another embodiment, the light adjustment layer 430 can attenuate the exposure of the flash 160 to the third portion 421, so the lattice of the third portion 421 can be rearranged to have a higher mobility than the original state.

As shown in FIG. 7B, the flash 160 is stopped, and the fourth portion 422 in the molten state starts to crystallize from the junction J4 between the fourth portion 422 and the third portion 421 (as indicated by the dotted arrow in the fourth portion 422 in FIG. 7B). (Shown) to form the crystal portion 423 shown in FIG. 7C. In one embodiment, the crystalline portion 423 has lateral crystalline characteristics.

After the processes shown in FIGS. 7A to 7C, the top view of the semiconductor device 400 is shown in FIG. 8. The semiconductor island region corresponding to the projection region 440 of the light-transmitting region 152 of the reticle and not blocked by the light adjustment layer 430 has been subjected to the flash 160 irradiation and crystallization process, and thus crystal portions 413 and 423 are formed. In an embodiment, since the first portion 411 of the semiconductor island 410 is located outside the projection area 440 and the third portion 421 of the semiconductor island 430 is blocked by the light adjustment layer 430 and is not irradiated by the flash 160 to maintain the original state, Therefore, the second portions 412 and 422 which are irradiated by the flash 160 and become molten are crystallized from the junctions J4 and J5 to form crystalline portions 413 and 423, respectively. The crystalline portions 413 and 423 have lateral crystalline characteristics.

The crystalline portion 423 made in the above embodiment can be used to form a semiconductor device. For example, as shown in FIG. 9, the channels of the semiconductor element (such as a thin film transistor inverter) are located in the crystal portion 423, and are respectively located between the source 521 and the drain 522, and the drain 522 And source 523. When the semiconductor device is operating, a current flows from the source 521 through the drain 522 to another source 523, that is, the current direction I. In one embodiment, the current direction I is perpendicular to the junction J4. In another embodiment, the semiconductor device may also be designed such that the current direction I and the junction J4 present other angles than the right angle.

In this way, the semiconductor device 400 of the present disclosure can use the design of the light adjustment layer 421 to block the flash from illuminating a part of the semiconductor island region (for example, the third portion 421) from the second surface S2 of the substrate without being blocked by the light adjustment layer 421. The other parts (for example, the fourth part 422) are irradiated by the flash light and become molten, and the crystalline part starts to crystallize from the molten part and the junction J4 that has not changed to the molten state to form a crystalline part 423.

In another embodiment, according to actual design requirements, the semiconductor islands 110 to 130, 410, and 420 can also be crystallized with an insulating layer (not shown).

FIG. 10 is a flowchart illustrating a manufacturing method 1000 according to an embodiment of the present disclosure. The manufacturing method 1000 includes a plurality of steps S1002 to S1004, which can be applied to the semiconductor devices 100 and 400 described in FIGS. 1 to 3 and FIGS. 6 to 8. Of course, those skilled in this case should understand that the steps mentioned in this embodiment can be adjusted according to actual needs, except for those who specify the sequence, and can even be performed simultaneously or partially. Concrete implementation The method is disclosed as before, and will not be repeated here.

In step S1002, a semiconductor island region on the first surface of the substrate is irradiated with a flash lamp and a photomask to form a crystalline portion, wherein the semiconductor island region is amorphous or microcrystalline, and the crystalline portion corresponds to a light-transmitting region of the photomask.

In step S1004, a semiconductor element is formed by using a crystalline portion, wherein a channel of the semiconductor element is located in the crystalline portion.

Through the above embodiments, the present disclosure can use the pattern design of the semiconductor island area in combination with the pattern design of the photomask and / or the light adjustment layer, and irradiate with a flash to crystallize the semiconductor. The crystal position and crystal direction of the semiconductor element can be designed It also effectively improves the consistency of crystalline strength, and the formed crystal grain size is large (such as micrometer (μm) grade).

Although the present disclosure has been disclosed above in the form of implementation, it is not intended to limit the new model. Any person skilled in this art can make various changes and retouches without departing from the spirit and scope of the present disclosure. The scope of protection shall be determined by the scope of the patent application.

Claims (4)

A semiconductor device includes: a semiconductor island region, which is located on a first surface of a substrate, and includes a crystalline portion, which is formed by a flash lamp illuminating the semiconductor island region through a light transmitting region of a photomask, wherein The semiconductor island region is amorphous or microcrystalline; and a semiconductor element, wherein a channel of the semiconductor element is located in the crystalline portion. The semiconductor device according to claim 1, wherein the semiconductor island region includes a first part and a second part, the second part is located in a projection area of the light transmitting area, and the first part is adjacent to the second part; The crystalline part is formed by the flash light illuminating the second part through the light transmitting area from the first side, and the second part starts to crystallize from the interface between the second part and one of the first parts. The semiconductor device according to claim 1, further comprising: a light adjustment layer disposed on the first side of the substrate so as to be located between the substrate and the semiconductor island region; and an insulating layer covering the substrate. The first surface and the light adjustment layer, wherein the semiconductor island region is formed on a surface of the insulating layer; wherein the semiconductor island region is located in a projection region of the light transmitting region, and includes a third portion and a fourth The light-adjusting layer corresponds to the third portion, and the third portion is adjacent to the fourth portion; the crystalline portion is transmitted by the flash light from the second surface of the substrate opposite to the first surface through the light-transmitting area The fourth part is irradiated, and the fourth part is formed by crystallization from the interface between the fourth part and the third part. The semiconductor device according to claim 1, wherein the photomask further includes an opaque area or a part of the opaque area.