CN208954994U - Semiconductor device - Google Patents

Abstract

A kind of semiconductor device discloses herein, and wherein semiconductor device includes semiconductor island area and semiconductor element.Semiconductor island area is located on the first face of substrate, and includes crystalline portion, is that the transmission region irradiation semiconductor island area by flash lamp through light shield is formed.Semiconductor island area is amorphous state or micro-crystallization state.The channel of semiconductor element is located in crystalline portion.Cooperate the design of light shield and/or light regulating course by the design in semiconductor island area, and carry out the crystallization of semiconductor to glisten light irradiation, can so effectively improve the consistency of Crystal.

Description

Semiconductor device

Technical field

This disclosure is about a kind of electronic device, and especially with regard to a kind of semiconductor device.

Background technique

In order to crystallize semiconductor, it is however generally that in view of in substrate by temperature, quasi-molecule laser annealing (Excimer Laser Annealing, ELA) processing procedure be at present compared with frequently with technology.However, line scanning (Linear scanning) Quasi-molecule laser annealing be limited to the size of laser spot and can not single treatment large area region, and since each swashs The problem of power of light luminous point is unstable, causes uniformity bad and is easy to produce spot (Mura).Therefore, the face of production capacity and substrate Product is difficult to improve, and except production cost is high, crystalline quality is also undesirable with crystallite dimension.

In addition, needing the position according to the element being ultimately produced if semiconducting crystal part to be utilized makes element It sets, processing procedure used by adjusting determines crystallization direction to combine crystallization position and position of components.Such mode often results in element Crystallization situation is difficult to the phenomenon grasped and Crystal consistency is not high.

Utility model content

In order to improve the Crystal consistency of the crystalline portion for making semiconductor element, this disclosure is to provide A kind of semiconductor device, it includes semiconductor island area and semiconductor elements.Semiconductor island area is located on the first face of substrate, and wraps It is light transmission (Transparent) area illumination semiconductor that light shield is penetrated by flash lamp (Flash lamp) containing crystalline portion Island area is formed, and wherein semiconductor island area is amorphous state (Amorphous) or micro-crystallization state (Micro-crystal).Semiconductor The channel of element is located in crystalline portion.

In an embodiment of this disclosure, wherein semiconductor island area includes first part and second part.Second Quartile is in the view field of transmission region, and first part is adjacent to second part.Crystalline portion is saturating from the first face by flash lamp Transmission region irradiation second part is crossed, and crystallizes and is formed since the junction of second part and first part.

It also include light regulating course and insulating layer in an embodiment of this disclosure.Light regulating course is set to substrate The first face, between substrate and semiconductor island area.Insulating layer is covered in the first face and the light regulating course of substrate, wherein half Conductor island area is formed on the surface of insulating layer.Semiconductor island area is located in the view field of transmission region, and includes third portion Point and Part IV.Light regulating course corresponds to Part III, and Part III is adjacent to Part IV.Crystalline portion be by flash lamp from Part IV, and connecing from Part IV and Part III are irradiated through transmission region in the second face relative to the first face of substrate Face starts crystallization and is formed.

In an embodiment of this disclosure, wherein light shield also includes the opaque region (Opaque) or partial light permeability (Semi-transparent) region.

In conclusion this disclosure is the design cooperation light shield and/or light regulating course using semiconductor island area Design, and with the light irradiation that glistens to carry out the crystallization of semiconductor, crystallization position and the crystallization of semiconductor element can be designed Direction, also effectively improves the consistency of Crystal, and it is larger (such as micron (μm) grade) to be formed by crystallite dimension.

Above-mentioned explanation will be explained in detail with embodiment below, and the technical solution of this disclosure is provided It is further to explain.

Detailed description of the invention

For the above and other purpose, feature, advantage and embodiment of this disclosure can be clearer and more comprehensible, appended attached drawing Be described as follows:

Fig. 1 is the upper schematic diagram for illustrating the semiconductor device of one embodiment of this disclosure；

Fig. 2A is the schematic cross-section for illustrating the semiconductor device of one embodiment of this disclosure；

Fig. 2 B is the schematic cross-section for illustrating the semiconductor device of one embodiment of this disclosure；

Fig. 2 C is the schematic cross-section for illustrating the semiconductor device of one embodiment of this disclosure；

Fig. 3 is the upper schematic diagram for illustrating the semiconductor device of one embodiment of this disclosure；

Fig. 4 is the semiconductor element schematic diagram for illustrating one embodiment of this disclosure；

Fig. 5 is the semiconductor element schematic diagram for illustrating one embodiment of this disclosure；

Fig. 6 is the upper schematic diagram for illustrating the semiconductor device of one embodiment of this disclosure；

Fig. 7 A is the schematic cross-section for illustrating the semiconductor device of one embodiment of this disclosure；

Fig. 7 B is the schematic cross-section for illustrating the semiconductor device of one embodiment of this disclosure；

Fig. 7 C is the schematic cross-section for illustrating the semiconductor device of one embodiment of this disclosure；

Fig. 8 is the upper schematic diagram for illustrating the semiconductor device of one embodiment of this disclosure；

Fig. 9 is the semiconductor element schematic diagram for illustrating one embodiment of this disclosure；And

Figure 10 is the manufacturing method flow chart for illustrating one embodiment of this disclosure.

Specific embodiment

In order to keep the narration of this disclosure more detailed with it is complete, can refer to attached drawing and various implementations as described below Example.But provided embodiment is not the range covered to limit the utility model；The description of step is also non-to limit Its sequence executed, it is any by reconfiguring, it is produced that there is equal and other effects device, it is all the model that the utility model is covered It encloses.

In embodiment and claims, unless be particularly limited in interior text for article, otherwise " one " with "the" can refer to single or a plurality of.It will be further appreciated that "comprising" used herein, " comprising ", " having " And similar vocabulary, indicate its documented feature, region, integer, step, operation, element and/or component, but be not excluded for its institute It states or additional one or more other feature, region, integer, step, operation, element, component and/or group therein.

The error or range for being commonly index value about " about " used herein, " about " or " substantially about " are about Within 20 percent, preferably it is within about 10, and is more preferably then within about 5 percent.Wen Zhongruo is without clear Illustrate, mentioned by numerical value all regard as approximation, i.e. error or model as represented by " about ", " about " or " substantially about " It encloses.

In addition, opposite vocabulary, such as "lower" or " bottom " and "upper" or " top ", for describe in text in the accompanying drawings shown in The relationship of one element and another element.Opposite vocabulary be for describe device it is described in the accompanying drawings except different direction be can With what is be understood.For example, it is positioned at the "lower" of other elements that element, which will be described originally, if the device in an attached drawing is reversed Side will be oriented positioned at the "upper" side of other elements.Illustrative vocabulary "lower", particular orientation with reference to the accompanying drawings may include "lower" and the "upper" orientation Liang Zhong.

Fig. 1 is the upper schematic diagram for illustrating the semiconductor device 100 of one embodiment of this disclosure.Semiconductor device 100 Include semiconductor island area (Island) 110,120,130 and semiconductor element (not being painted).As shown in Figure 1, semiconductor island area 110,120 are that some is located at the light transmission region (Transparent) of light shield in the view field 140 on substrate 170, and Another part is view field of the opaque region (Opaque) on substrate 170 positioned at light shield (other than view field 140 Region)；And semiconductor island area 130 is entirely located in transmission region in the view field 140 on substrate 170.Implement in one In example, semiconductor island area 110,120,130 is non-crystalline state (Amorphous) or micro-crystallization state (Micro-crystal), is It is formed by deposition (Deposition) processing procedure with (Patterning) processing procedure is patterned.Deposition manufacture process is including but not limited to change Learn vapor deposition (Chemical Vapor Deposition, CVD), sputter (Sputter) or solution application (Solution Based method).

In order to illustrate crystallisation procedure, Fig. 2A~Fig. 2 C is please referred to, is that the section in the direction line segment AA ' according to Fig. 1 shows It is intended to.As shown in Figure 2 A, the light emitting region of flash lamp 160 is greater than the transmission region 152 of light shield, and semiconductor island area 110 is located at base It on first face S1 of plate 170, and include first part 111 and second part 112, wherein second part 112 is corresponding is located at light The transmission region 152 of cover is in the view field 140 on substrate 170.When flash lamp (Flash lamp) 160 is irradiated through light shield When semiconductor device 100, light may pass through the transmission region 152 of light shield and irradiate the second part 112 in semiconductor island area 110, Therefore second part 112 becomes molten state (Fusion).

In an embodiment, the first part 111 in semiconductor island area 110 corresponds to the light tight region 151 of light shield, therefore First part 111 is stopped by light tight region 151 without the irradiation by flash lamp 160, and maintain its original state (that is, Non- crystalline state or micro-crystallization state).In another embodiment, the light tight region 151 of above-mentioned light shield also may be designed as partial light permeability (Semi-transparent) region, the first part 111 in semiconductor island area 110 correspond to the partially transparent area of light shield, because This receives the flash lamp 160 after decaying and irradiates, and the lattice of first part 111 can rearrange high compared with original state to have Mobility (Mobility).It should be noted that substrate 170 also may include other same or different materials films or structure, that is, Semiconductor island area 110,120,130 may be formed in film or the structure of the other materials of substrate, and this disclosure not limits Semiconductor island area 110,120,130 is formed directly on substrate.

As shown in Figure 2 B, flash lamp 160 stops irradiation, and the second part 112 of molten state is from second part 112 and first 111 junction J1 is divided to start to crystallize (as shown in the dotted arrow in Fig. 2 B second part 112), to form knot shown in fig. 2 C Brilliant part 113.In an embodiment, crystalline portion 113 has side crystallization (Lateral crystallization) characteristic.

After such as Fig. 2A~processing procedure shown in fig. 2 C, the upper schematic diagram of semiconductor device 100 is as shown in Figure 3.It is corresponding The part in the semiconductor island area of the view field 140 of the transmission region 152 of light shield is passed through the irradiation of flash lamp 160 and was crystallized Journey, therefore form crystalline portion 113,123,133.In an embodiment, due to the first part in semiconductor island area 110,120 111,121 are located at except view field 140, are not affected by irradiation and maintain original state, therefore are irradiated and become by flash lamp 160 Second part 112 for molten state is to crystallize since junction J1, J2 respectively and form crystalline portion 113 (123), and crystallize Part 113,123 has side crystallization characteristic.In another embodiment, since semiconductor island area 130 is fully located at view field In 140, after being become molten state by the irradiation of flash lamp 160, the crystallization of semiconductor island area 130 forms crystalline portion 133, and Crystalline portion 133 has micro-crystallization characteristic.

Semiconductor element may be used to form by the crystalline portion that above-described embodiment is produced.For example, as shown in figure 4, Crystalline portion 213 is the second part (with 213 same position of crystalline portion) into molten state from second part and first part Junction J3 starts to crystallize and be formed between 211.Semiconductor element (such as thin film transistor (TFT) (Thin-Film Transistor, TFT channel)) is located in crystalline portion 213, and is located between source electrode 221 and drain electrode 222.When semiconductor element running, Electric current flows to drain electrode 222, that is, current direction I by source electrode 221.In an embodiment, current direction I is perpendicular to junction J3.In In another embodiment, semiconductor element also may be designed as other angles of its current direction I and junction J3 presentation other than right angle Degree.

In order to design in response to different types of semiconductor element, the shape of crystalline portion can pass through the pattern in semiconductor island area The design of design and light shield, and there is different shapes.In an embodiment, as shown in figure 5, semiconductor island area 310 is Circle, it includes first parts 311 and second part 312.First part 311 is not affected by the irradiation of flash lamp 160, and maintains its original First state (that is, non-crystalline state or micro-crystallization state).Second part 312 is located in the view field of the transmission region of light shield, therefore The crystalline portion of cyclic annular (Doughnut shape) is irradiated and crystallized and formed by flash lamp 160.

In this way, this disclosure utilize light shield conjunction with semiconductors island area design, with glisten light irradiation and Carry out the crystallization in semiconductor island area.Compared to quasi-molecule laser annealing technology, this disclosure can reach the crystallization of high evenness, The consistency of Crystal is thus improved, and it is larger (such as micron (μm) grade) to be formed by crystallite dimension.Further, since Semiconductor island area can be classified as being fully located in irradiation region (such as Fig. 1 semiconductor island area 130), partially be located at and shine by mask set It (such as Fig. 1 semiconductor island area 110,120) and is fully located at except non-irradiation region in light region.Therefore, crystallization property also may be used It is learnt according to above-mentioned classification judgement.For example, as shown in figure 3, the crystal region 133 in semiconductor island area 130 is micro-crystallization characteristic, The crystal region 113,123 in semiconductor island area 110,120 is side crystallization characteristic.

In another embodiment, flash lamp can also from the back side (that is, second face S2) of substrate irradiate semiconductor island area with It is crystallized.Fig. 6 is the upper schematic diagram for illustrating the semiconductor device 400 of one embodiment of this disclosure.Semiconductor device 400 Include semiconductor island area 410,420, light regulating course 430 and semiconductor element (not being painted).As shown in fig. 6, semiconductor island area 410 It is that only part is located at the transmission region 152 of light shield in the view field 440 on semiconductor device 400, and semiconductor island area 420 are fully located in the view field 440 of transmission region 152.In an embodiment, semiconductor island area 410,420 is not crystallize State or micro-crystallization state are to be formed by deposition manufacture process with patterning process.

In order to illustrate crystallisation procedure, Fig. 7 A~Fig. 7 C is please referred to, is the section signal according to the direction Fig. 6 line segment BB ' Figure.As shown in Figure 7 A, flash lamp 160 is irradiated from the second face S2 of substrate 470, and the light emitting region of flash lamp 160 is big In the transmission region 152 of light shield.There is light regulating course 430 on first face S1 of substrate 470, and insulating layer 480 is covered in substrate 470 the first face S1 and light regulating course 430, semiconductor island area 420 are formed on the surface of insulating layer 480, and include third Part 421 and Part IV 422.When the second face S2 irradiation opposite through the first face S1 of light shield from substrate 470 of flash lamp 160 When semiconductor device 400, light may pass through the transmission region 152 of light shield and irradiation light regulating course 430 and semiconductor island area 420. Since light regulating course 430 is the function as reflective layer, light absorbing layer or optical attenuation layer, light regulating course 430 can be complete Stop flash lamp 160 to irradiate the Part III 421 in semiconductor island area 420, and Part III 421 is made to maintain its original state (also I.e. non-crystalline state or micro-crystallization state).The Part IV 422 for being not affected by the blocking of light regulating course 430 becomes since flash lamp 160 irradiates For molten state.In another embodiment, to the exposure of Part III 421, therefore light regulating course 430 can decay flash lamp 160 The lattice of Part III 421 can be rearranged to have the mobility high compared with original state.

As shown in Figure 7 B, flash lamp 160 stops irradiation, and the Part IV 422 of molten state is from Part IV 422 and third portion 421 junction J4 is divided to start to crystallize (as shown in the dotted arrow in Fig. 7 B Part IV 422), to form knot shown in Fig. 7 C Brilliant part 423.In an embodiment, crystalline portion 423 has side crystallization characteristic.

After the processing procedure as shown in Fig. 7 A~Fig. 7 C, the upper schematic diagram of semiconductor device 400 is as shown in Figure 8.It is corresponding It the semiconductor island area of the view field 440 of the transmission region 152 of light shield and is not passed through by the part that light regulating course 430 stops The irradiation of flash lamp 160 and crystallisation procedure are crossed, therefore forms crystalline portion 413,423.In an embodiment, due to semiconductor island The first part 411 in area 410 is located at except view field 440 and the Part III 421 in semiconductor island area 430 is by light tune The blocking of ganglionic layer 430 is not affected by the irradiation of flash lamp 160 and maintains original state, therefore irradiated by flash lamp 160 and become molten The second part 412,422 for melting state is to crystallize since junction J4, J5 respectively and form crystalline portion 413,423, and crystallize Part 413,423 has side crystallization characteristic.

The crystalline portion 423 produced by above-described embodiment may be used to form semiconductor element.For example, such as Fig. 9 institute Show, the channel of semiconductor element (such as thin film transistor (TFT) phase inverter (Inverter)) is located in crystalline portion 423, and respectively Between source electrode 521 and drain electrode 522, and between drain electrode 522 and source electrode 523.When semiconductor element running, electric current is by source Pole 521 flows to another source electrode 523, that is, current direction I by drain electrode 522.In an embodiment, current direction I is perpendicular to connecing Face J4.In another embodiment, semiconductor element also may be designed as its current direction I and junction J4 and present other than right angle Other angles.

In this way, which the semiconductor device 400 of this disclosure can be using the design of light regulating course 421 to stop flash lamp The semiconductor island area of a part of (such as Part III 421) is irradiated from substrate the second face S2, and do not stopped by light regulating course 421 Other parts (such as Part IV 422) then by flash of light light irradiation and become molten state, and from melting polymorphic segment with it is unchanged Start crystallization for the junction J4 of molten state to form crystalline portion 423.

In another embodiment, according to actual design demand, can also it covered in semiconductor island area 110~130,410,420 It is crystallized in the case where insulating layer (not being painted).

Figure 10 is 1000 flow chart of manufacturing method for illustrating one embodiment of this disclosure.Manufacturing method 1000 has multiple Step S1002~S1004 can be applied to the semiconductor device 100,400 as described in FIG. 1 to FIG. 3, Fig. 6~Fig. 8.So it is familiar with The those skilled in the art of this case is it will be understood that mentioned step can be according to reality in addition to especially chatting its bright sequence person in the present embodiment It needs to adjust its tandem, or even can simultaneously or partially be performed simultaneously.For example preceding announcement of specific implementation, is not repeated herein Narration.

In step S1002, using flash lamp and light shield, the semiconductor island area irradiated on the first face of substrate is to form crystallization Part, wherein semiconductor island area is amorphous state or micro-crystallization state, and crystalline portion corresponds to the transmission region of light shield.

In step S1004, semiconductor element is formed using crystalline portion, wherein the channel of semiconductor element is located at crystallization unit In point.

This disclosure is able to through above-described embodiment, cooperates light shield and/or light using the design in semiconductor island area The design of regulating course, and with the light irradiation that glistens to carry out the crystallization of semiconductor, the crystallization position of semiconductor element can be designed It sets and crystallization direction, also effectively improves the consistency of Crystal, and be formed by the larger (such as micron (μ of crystallite dimension M) grade).

Although this disclosure is disclosed above with embodiment, so it is not intended to limit the utility model, any ripe This those skilled in the art is known, in the spirit and scope for not departing from this disclosure, when can be used for a variety of modifications and variations, therefore this is practical Novel protection scope is subject to the range defined depending on claims.

Claims (4)

1. a kind of semiconductor device, characterized by comprising:

Semiconductor island area on one first face of a substrate, and includes a crystalline portion, is by a flash lamp through one One transmission region of light shield irradiates the semiconductor island area and is formed, and wherein the semiconductor island area is amorphous state or micro-crystallization state；With And

Semiconductor element, wherein a channel of the semiconductor element is located in the crystalline portion.

2. semiconductor device according to claim 1, which is characterized in that the semiconductor island area includes a first part and one Second part, the second part are located in a view field of the transmission region, and the first part is adjacent to the second part；The knot Brilliant part be irradiate the second part through the transmission region from first face by the flash lamp, and the second part from this One junction of two parts and the first part starts crystallization and is formed.

3. semiconductor device according to claim 1, which is characterized in that also include:

One smooth regulating course is set to first face of the substrate, between the substrate and the semiconductor island area；And

One insulating layer is covered in first face and the light regulating course of the substrate, and wherein the semiconductor island area is formed in the insulation On the surface of layer；

Wherein the semiconductor island area is located in a view field of the transmission region, and includes a Part III and one the 4th Point；The light regulating course corresponds to the Part III, and the Part III is adjacent to the Part IV；The crystalline portion is by the flash lamp The Part IV, and the Part IV are irradiated from one second face relative to first face of the substrate through the transmission region It crystallizes and is formed since the Part IV and a junction of the Part III.

4. semiconductor device according to claim 1, which is characterized in that the light shield also includes a light tight region or one Divide transmission region.