TWI704697B - Semiconductor device and manufacturing method for the same - Google Patents

Abstract

A semiconductor device and a manufacturing method for the same are disclosed herein, in which the semiconductor device includes a semiconductor island and a semiconductor component. The semiconductor island is located on a first side of a substrate, and includes a crystal part. The crystal part is formed from the semiconductor island that is irradiated by a flash lamp through a transparent region of a mask. The semiconductor island is in amorphous state or micro-crystal state. A channel of the semiconductor component is located in the crystal part.

Description

Semiconductor device and manufacturing method thereof

The present disclosure relates to a manufacturing technology, and particularly to a semiconductor device and a manufacturing method thereof.

In order to crystallize semiconductors, generally speaking, considering the internal temperature of the substrate, the Excimer Laser Annealing (ELA) process is currently a more commonly used technology. However, linear scanning (Linear scanning) excimer laser annealing is limited by the size of the laser spot and cannot handle a large area at one time, and because the power of each laser spot is unstable, the uniformity is not good and easy There is a problem of mura. Therefore, it is difficult to increase the production capacity and the area of the substrate, the production cost remains high, and the crystal quality and grain size are not ideal.

In addition, if you want to use the semiconductor crystal part to make a device, you need to adjust the process used to combine the crystal position and the device position according to the final position of the finished device, and determine the crystal direction. This method often results in the difficulty of grasping the crystallization status of the device and the inconsistent crystal strength.

In order to improve the consistency of the crystal strength of the crystal part used for manufacturing the semiconductor device, the present disclosure provides a semiconductor device including a semiconductor island region and a semiconductor device. The semiconductor island region is located on the first surface of the substrate and contains a crystalline part, which is formed by illuminating the semiconductor island region with a flash lamp through the transparent region of the photomask, and the semiconductor island region is amorphous ( Amorphous) or Micro-crystal. The channel of the semiconductor element is located in the crystalline part.

In an embodiment of the present disclosure, the semiconductor island region includes a first part and a second part. The second part is located in the projection area of the transparent area, and the first part is adjacent to the second part. The crystalline part is formed by the flash lamp illuminating the second part from the first surface through the light-transmitting area, and crystallizes from the interface between the second part and the first part.

In an embodiment of the present disclosure, it further includes a light adjustment layer and an insulating layer. The light adjustment layer is arranged on the first surface of the substrate so as to be located between the substrate and the semiconductor island region. The insulating layer covers the first surface of the substrate and the light adjustment layer, and the semiconductor island region is formed on the surface of the insulating layer. The semiconductor island area is located in the projection area of the light-transmitting area, and includes a third part and a fourth part. The light adjustment layer corresponds to the third part, and the third part is adjacent to the fourth part. The crystalline part is formed by the flash lamp illuminates the fourth part from the second surface of the substrate opposite to the first surface through the light-transmitting area, and crystallizes from the interface between the fourth part and the third part.

In an embodiment of the present disclosure, the photomask further includes Opaque regions or semi-transparent regions area.

Another aspect of the present disclosure is to provide a method for manufacturing a semiconductor device, which includes: irradiating a semiconductor island region on the first surface of a substrate with a flash lamp and a photomask to form a crystalline portion, wherein the semiconductor island region is amorphous or Microcrystalline state, the crystalline part corresponds to the light-transmitting area of the mask. The crystalline part is used to form a semiconductor element, wherein the channel of the semiconductor element is located in the crystalline part.

In an embodiment of the present disclosure, it further includes: using a flash lamp and a photomask to illuminate the semiconductor island area from the first side, wherein the semiconductor island area includes a first part and a second part, and the second part is located in the projection area of the light-transmitting area Inside, the first part is adjacent to the second part. The second part crystallizes from the junction of the second part and the first part to form a crystalline part.

In an embodiment of the present disclosure, it further includes: disposing a light adjustment layer on the first surface of the substrate so as to be located between the semiconductor island area and the substrate; disposing an insulating layer to cover the first surface of the substrate and the light The adjustment layer, in which the semiconductor island region is formed on the surface of the insulating layer; using a flash lamp and a photomask, the semiconductor island region is illuminated by a second side of the substrate opposite to the first side, and the semiconductor island region is located in a projection area of the transparent region And includes a third part and a fourth part. The light adjustment layer corresponds to the third part, and the third part is adjacent to the fourth part. The fourth part starts to crystallize from the junction of the fourth part and the third part to form a crystalline part.

In an embodiment of the present disclosure, the photomask further includes an opaque area or a partially transparent area.

In summary, the present disclosure uses the map of the semiconductor island The design of the case is matched with the pattern design of the photomask and/or the light adjustment layer, and the flash lamp is used to crystallize the semiconductor. The crystal position and crystal direction of the semiconductor element can be designed, and the consistency of the crystal strength is also effectively improved. The grain size is relatively large (for example, micrometer (μm) level).

Hereinafter, the above description will be described in detail by way of implementation, and a further explanation will be provided for the technical solution of the present disclosure.

In order to make the above and other objectives, features, advantages and embodiments of the present disclosure more comprehensible, the description of the attached symbols is as follows:

100, 400: semiconductor device

110, 120, 130, 310, 410, 420: semiconductor island area

111, 121, 211, 311: Part One

112, 312: Part Two

113, 123, 133, 213: crystalline part

140, 440: projection area

151: The opaque area of the photomask

152: Transmissive area of the photomask

AA’, BB’: Line segment

170, 470: substrate

S1: First side

J1, J2, J3, J4, J5: junction

I: Current direction

221, 521, 523: Source

222, 522: Drain

411, 421: Part Three

422: Part Four

413, 423: Crystalline part

430: light adjustment layer

480: insulating layer

S2: Second side

1000: Manufacturing method

S1002~S1004: steps

In order to make the above and other objectives, features, advantages and embodiments of the present disclosure more comprehensible, the description of the accompanying drawings is as follows: Figure 1 is a schematic top view illustrating a semiconductor device according to an embodiment of the present disclosure; Fig. 2A is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment of the present disclosure; Fig. 2B is a schematic cross-sectional view illustrating a semiconductor device according to an embodiment of the present disclosure; Fig. 2C illustrates a semiconductor device according to an embodiment of the present disclosure Fig. 3 is a schematic top view of a semiconductor device illustrating an embodiment of the present disclosure; Fig. 4 is a schematic diagram illustrating a semiconductor device of an embodiment of the present disclosure; Fig. 5 illustrates an embodiment of the present disclosure Schematic diagram of semiconductor components; Fig. 6 is a schematic top view of a semiconductor device illustrating an embodiment of the present disclosure; Fig. 7A is a schematic cross-sectional view illustrating a semiconductor device of an embodiment of the present disclosure; Fig. 7B illustrates a semiconductor device of an embodiment of the present disclosure A schematic cross-sectional view of the device; Figure 7C is a schematic cross-sectional view of a semiconductor device illustrating an embodiment of the present disclosure; Figure 8 is a schematic top view illustrating a semiconductor device of an embodiment of the present disclosure; Figure 9 illustrates the present disclosure A schematic diagram of a semiconductor device of an embodiment; and FIG. 10 is a flowchart illustrating a manufacturing method of an embodiment of the present disclosure.

In order to make the description of the present disclosure more detailed and complete, please refer to the drawings and various embodiments described below. However, the examples provided are not intended to limit the scope of the present invention; the description of the steps is not intended to limit the order of their execution. Any device with equal effects produced by recombination is all covered by the present invention. range.

In the implementation mode and the scope of the patent application, unless the article is specifically limited in the context, "a" and "the" can generally refer to a single or plural. It will be further understood that the "include", "package" used in this article "Enclosed", "have" and similar words indicate the recorded features, regions, integers, steps, operations, elements and/or components, but do not exclude the mentioned or additional one or more other features, regions, Integers, steps, operations, elements, components, and/or groups thereof.

Regarding the "about", "approximately" or "approximately" used in this article, the error or range of the index value is generally within about 20%, preferably within about 10%, and more preferably It is within about five percent. If there is no clear description in the text, the values mentioned are regarded as approximate values, that is, the error or range represented by "about", "approximately" or "approximately".

In addition, relative terms, such as "under" or "bottom" and "up" or "top", are used to describe the relationship between one element and another element shown in the drawings in the text. It is understandable that the relative vocabulary is used to describe different orientations of the device other than those described in the drawings. For example, if the device in one figure is turned over, the components will be described as being on the "lower" side of other components and will be oriented on the "upper" side of the other components. The exemplified word "down" can include two directions of "down" and "up" according to the specific orientation of the drawing.

FIG. 1 is a schematic top view illustrating a semiconductor device 100 according to an embodiment of the present disclosure. The semiconductor device 100 includes semiconductor islands (Island) 110, 120, 130 and semiconductor elements (not shown). As shown in Figure 1, a part of the semiconductor island regions 110, 120 is located in the transparent area of the mask in the projection area 140 on the substrate 170, and another part is located in the opaque (Opaque) area of the mask. ) The projection area of the area on the substrate 170 (the area other than the projection area 140); and the semiconductor island area 130 is the projection area 140 where the transparent area is completely located on the substrate 170 Inside. In an embodiment, the semiconductor island regions 110, 120, and 130 are amorphous or micro-crystal, which are formed through a deposition process and a patterning process. The deposition process includes, but is not limited to, chemical vapor deposition (CVD), sputtering (Sputter), or solution based (Solution based) methods.

In order to illustrate the crystallization process, please refer to Figures 2A~2C, which is a schematic cross-sectional view along the line AA' in Figure 1. As shown in Figure 2A, the light-emitting area of the flash lamp 160 is larger than the light-transmitting area 152 of the photomask. The semiconductor island area 110 is located on the first surface S1 of the substrate 170 and includes a first portion 111 and a second portion 112, wherein the second portion 112 is correspondingly located in the projection area 140 of the transparent area 152 of the mask on the substrate 170. When the flash lamp 160 illuminates the semiconductor device 100 through the photomask, the light can pass through the light-transmitting area 152 of the photomask to illuminate the second portion 112 of the semiconductor island region 110, and the second portion 112 becomes a molten state (Fusion ).

In one embodiment, the first portion 111 of the semiconductor island region 110 corresponds to the opaque area 151 of the photomask, so the first portion 111 is blocked by the opaque area 151 and will not be illuminated by the flash 160, but maintains its original state (That is, the uncrystalline state or the microcrystalline state). In another embodiment, the opaque area 151 of the photomask can also be designed as a semi-transparent area, and the first part 111 of the semiconductor island region 110 corresponds to the partially transparent area of the photomask, and therefore receives After the attenuated flash lamp 160 is irradiated, the crystal lattice of the first part 111 can be rearranged to have a higher mobility than the original state. It should be noted that the substrate 170 may also include Other thin films or structures containing the same or different materials, that is, the semiconductor island regions 110, 120, and 130 can be formed on films or structures of other materials on the substrate. The present disclosure does not limit the semiconductor island regions 110, 120, and 130 to be directly formed on On the substrate.

As shown in Figure 2B, the flash lamp 160 stops irradiating, and the molten second part 112 begins to crystallize from the junction J1 of the second part 112 and the first part 111 (as shown by the dashed arrow in the second part 112 of Figure 2B ) To form the crystalline portion 113 shown in Figure 2C. In one embodiment, the crystalline portion 113 has a characteristic of Lateral crystallization.

After the manufacturing process shown in FIGS. 2A to 2C, a schematic top view of the semiconductor device 100 is shown in FIG. 3. The portions of the semiconductor island region of the projection region 140 corresponding to the light-transmitting region 152 of the photomask are all irradiated by the flash lamp 160 and crystallized, thereby forming the crystalline portions 113, 123, 133. In one embodiment, since the first portions 111 and 121 of the semiconductor island regions 110 and 120 are located outside the projection area 140 and are not irradiated and maintain the original state, the second portion 112 that is irradiated by the flash lamp 160 and becomes a molten state is Crystallization starts from the junctions J1 and J2 to form the crystalline portion 113 (123), and the crystalline portions 113 and 123 have lateral crystalline characteristics. In another embodiment, since the semiconductor island region 130 is completely located in the projection region 140, after being irradiated by the flash lamp 160 to become a molten state, the semiconductor island region 130 is crystallized to form a crystalline portion 133, and the crystalline portion 133 has microcrystalline characteristics.

The crystalline part produced by the above embodiments can be used to form a semiconductor device. For example, as shown in Figure 4, the crystalline part 213 enters the second part of the molten state (the same position as the crystalline part 213) from the second part The junction J3 with the first portion 211 begins to crystallize. The channel of the semiconductor element (for example, Thin-Film Transistor (TFT)) is located in the crystalline part 213 and between the source 221 and the drain 222. When the semiconductor device is operating, current flows from the source 221 to the drain 222, that is, the current direction I. In one embodiment, the current direction I is perpendicular to the junction J3. In another embodiment, the semiconductor device can also be designed such that the current direction I and the junction J3 present an angle other than a right angle.

In order to respond to different types of semiconductor device designs, the shape of the crystalline part can have different shapes through the pattern design of the semiconductor island region and the pattern design of the photomask. In one embodiment, as shown in FIG. 5, the semiconductor island region 310 is circular and includes a first portion 311 and a second portion 312. The first part 311 is not irradiated by the flash lamp 160, but maintains its original state (that is, an uncrystalline state or a microcrystalline state). The second part 312 is located in the projection area of the light-transmitting area of the photomask, and therefore is illuminated by the flash lamp 160 and crystallized to form a doughnut-shaped crystal part.

In this way, the present disclosure utilizes the photomask to match the pattern design of the semiconductor island region, and illuminates the semiconductor island region with a flash lamp to crystallize the semiconductor island region. Compared with the excimer laser annealing technology, the present disclosure can achieve high uniformity of crystallization, thereby improving the consistency of crystal strength, and the formed crystal grain size is larger (for example, micrometer (μm) level). In addition, due to the photomask design, the semiconductor island regions can be classified as completely located in the illuminated region (such as the semiconductor island region 130 in Figure 1), partially located in the illuminated region (such as the semiconductor island region 110 and 120 in Figure 1), and completely located in the unlit region. Outside the illuminated area. Therefore, the crystal characteristics can also be judged according to the above classification. For example, as shown in Figure 3, the semiconductor island The crystalline region 133 of the region 130 has microcrystalline characteristics, and the crystalline regions 113 and 123 of the semiconductor island regions 110 and 120 have lateral crystalline characteristics.

In another embodiment, the flash lamp can also illuminate the semiconductor island region from the back side of the substrate (ie, the second surface S2) for crystallization. FIG. 6 is a schematic top view illustrating a semiconductor device 400 according to an embodiment of the present disclosure. The semiconductor device 400 includes semiconductor island regions 410 and 420, a light adjustment layer 430, and semiconductor elements (not shown). As shown in Figure 6, the semiconductor island area 410 is only partially located in the projection area 440 of the light-transmitting area 152 of the mask on the semiconductor device 400, while the semiconductor island area 420 is completely located in the projection area 440 of the light-transmitting area 152 . In one embodiment, the semiconductor island regions 410 and 420 are in an uncrystalline state or a microcrystalline state, which are formed through a deposition process and a patterning process.

In order to illustrate the crystallization process, please refer to Figures 7A to 7C, which is a schematic cross-sectional view along the line BB' in Figure 6. As shown in FIG. 7A, the flash lamp 160 illuminates from the second surface S2 of the substrate 470, and the light-emitting area of the flash lamp 160 is larger than the light-transmitting area 152 of the mask. The first surface S1 of the substrate 470 has a light adjustment layer 430, and the insulating layer 480 covers the first surface S1 of the substrate 470 and the light adjustment layer 430. The semiconductor island region 420 is formed on the surface of the insulating layer 480 and includes the third Part 421 and fourth part 422. When the flash 160 illuminates the semiconductor device 400 from the second side S2 opposite to the first side S1 of the substrate 470 through the mask, the light can pass through the light-transmitting area 152 of the mask to illuminate the light adjustment layer 430 and the semiconductor island region 420. Since the light adjustment layer 430 functions as a light reflecting layer, a light absorption layer or a light attenuation layer, the light adjustment layer 430 can completely block the flash 160 from illuminating the third part of the semiconductor island region 420 421, so that the third part 421 maintains its original state (that is, an uncrystalline state or a microcrystalline state). The fourth portion 422 that is not blocked by the light adjustment layer 430 becomes a molten state due to the irradiation of the flash lamp 160. In another embodiment, the light adjustment layer 430 can attenuate the irradiation amount of the flash lamp 160 to the third portion 421, so the crystal lattice of the third portion 421 can be rearranged to have a higher mobility than the original state.

As shown in Fig. 7B, the flash lamp 160 stops irradiating, and the fourth part 422 in the molten state begins to crystallize from the junction J4 of the fourth part 422 and the third part 421 (as indicated by the dotted arrow in the fourth part 422 in Fig. 7B ), to form the crystalline portion 423 shown in FIG. 7C. In one embodiment, the crystalline portion 423 has lateral crystalline characteristics.

After the manufacturing process shown in FIGS. 7A to 7C, the top schematic view of the semiconductor device 400 is shown in FIG. 8. The portions of the semiconductor island region corresponding to the projection region 440 of the light-transmitting region 152 of the photomask and not blocked by the light adjustment layer 430 are all irradiated and crystallized by the flash lamp 160, thus forming the crystalline portions 413 and 423. In one embodiment, since the first portion 411 of the semiconductor island region 410 is located outside the projection area 440, and the third portion 421 of the semiconductor island region 430 is blocked by the light adjustment layer 430, it is not illuminated by the flash lamp 160 and maintains the original state. Therefore, the second parts 412 and 422 that are irradiated by the flash lamp 160 and become molten are crystallized from the junctions J4 and J5 to form the crystalline parts 413 and 423, and the crystalline parts 413 and 423 have lateral crystalline characteristics.

The crystalline portion 423 produced by the above embodiment can be used to form a semiconductor device. For example, as shown in Figure 9, a semiconductor element (example The channel of a thin-film transistor inverter (Inverter) is located in the crystalline part 423, and is located between the source 521 and the drain 522, and between the drain 522 and the source 523, respectively. When the semiconductor device is operating, current flows from the source 521 through the drain 522 to the other source 523, that is, the current direction I. In one embodiment, the current direction I is perpendicular to the junction J4. In another embodiment, the semiconductor device can also be designed such that the current direction I and the junction J4 present an angle other than a right angle.

In this way, the semiconductor device 400 of the present disclosure can utilize the design of the light adjustment layer 421 to prevent the flash from illuminating a part (for example, the third portion 421) of the semiconductor island region from the second surface S2 of the substrate, without being blocked by the light adjustment layer 421 The other part (for example, the fourth part 422) is irradiated by the flash lamp and becomes a molten state, and crystallizes from the junction J4 of the molten part and the non-melted state to form the crystalline part 423.

In another embodiment, according to actual design requirements, the semiconductor island regions 110-130, 410, 420 can also be crystallized with an insulating layer (not shown) being covered.

FIG. 10 is a flowchart illustrating a manufacturing method 1000 of an embodiment of the present disclosure. The manufacturing method 1000 has a plurality of steps S1002 to S1004, which can be applied to the semiconductor devices 100 and 400 described in FIGS. 1 to 3 and 6 to 8. However, those who are familiar with the art of this case should understand that the steps mentioned in this embodiment can be adjusted according to actual needs, and can even be executed simultaneously or partly, unless the order is specifically stated. The specific implementation method is disclosed as before, and the description will not be repeated here.

In step S1002, the substrate is illuminated with a flash lamp and a photomask The semiconductor island region on the first surface forms a crystalline part, wherein the semiconductor island region is in an amorphous or microcrystalline state, and the crystalline part corresponds to the light-transmitting region of the photomask.

In step S1004, a semiconductor element is formed by using the crystallized part, wherein the channel of the semiconductor element is located in the crystallized part.

The present disclosure can be achieved through the above-mentioned embodiments, using the pattern design of the semiconductor island region to match the pattern design of the photomask and/or the light adjustment layer, and irradiating with a flash lamp to perform the crystallization of the semiconductor, so that the crystal position and crystal direction of the semiconductor element can be designed , It also effectively improves the consistency of crystal strength, and the formed crystal grain size is larger (for example, micrometer (μm) level).

Although the present disclosure has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone familiar with this technique can make various changes and modifications without departing from the spirit and scope of the present disclosure. Therefore, the present invention The scope of protection shall be determined by the scope of the patent application.

100: Semiconductor device

111, 121: Part One

113, 123, 133: crystalline part

140: Projection area

170: substrate

J1, J2: junction

Claims (6)

A method for manufacturing a semiconductor device includes: irradiating a semiconductor island region on a first surface of a substrate with a flash lamp and a photomask to form a crystalline portion, wherein the semiconductor island region is in an amorphous or microcrystalline state , The crystalline part corresponds to a light-transmitting area of the photomask; the crystalline part is used to form a semiconductor element, wherein a channel of the semiconductor element is located in the crystalline part; a light adjustment layer is provided on the first surface of the substrate, To be located between the semiconductor island region and the substrate; provide an insulating layer to cover the first surface of the substrate and the light adjustment layer, wherein the semiconductor island region is formed on the surface of the insulating layer; using the flash lamp With the photomask, the semiconductor island area is irradiated by a second surface of the substrate opposite to the first surface. The semiconductor island area is located in a projection area of the light-transmitting area and includes a third portion and a first surface. Four parts, the light adjustment layer corresponds to the third part, and the third part is adjacent to the fourth part; and the fourth part starts to crystallize from a junction of the fourth part and the third part to form the Crystalline part. The method of manufacturing a semiconductor device according to claim 1, further comprising: using the flash lamp and the photomask to illuminate the semiconductor island region from the first side, wherein the semiconductor island region includes a first part and a second part, The second part is located in a projection area of the light-transmitting area, and the first part is adjacent to the second part; and The second part is crystallized from a junction of the second part and the first part to form the crystalline part. The method for manufacturing a semiconductor device according to claim 1, wherein the photomask further includes a non-transmissive area or a part of the transparent area. A semiconductor device comprising: a semiconductor island region located on a first surface of a substrate and comprising a crystalline part formed by a flash lamp irradiating the semiconductor island region through a light-transmitting region of a photomask, wherein The semiconductor island region is in an amorphous or microcrystalline state; a semiconductor element, wherein a channel of the semiconductor element is located in the crystalline portion; a light adjustment layer is provided on the first surface of the substrate so as to be located between the substrate and Between the semiconductor island regions; and an insulating layer covering the first surface of the substrate and the light adjustment layer, wherein the semiconductor island region is formed on the surface of the insulating layer; wherein the semiconductor island region is located in the light-transmitting layer One of the regions is within the projection area and includes a third part and a fourth part; the light adjustment layer corresponds to the third part, and the third part is adjacent to the fourth part; the crystalline part is removed from the substrate by the flash lamp A second surface opposite to the first surface illuminates the fourth part through the light-transmitting area, and the fourth part is formed by crystallization starting from a junction of the fourth part and the third part. The semiconductor device according to claim 4, wherein the half The conductive island region includes a first part and a second part, the second part is located in a projection area of the light-transmitting area, the first part is adjacent to the second part; the crystalline part is transmitted by the flash lamp from the first surface The light-transmitting area irradiates the second part, and the second part is formed by crystallization from a junction of the second part and the first part. The semiconductor device according to claim 4, wherein the photomask further includes an opaque area or a part of a light-transmitting area.

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