TWM544708U - Light-emitting device - Google Patents

Description

Light-emitting element

The present invention relates to a light-emitting element, and more particularly to a light-emitting element that utilizes a circuit design and a corresponding packaging process to achieve a chip scale package.

In the technical field of light-emitting elements, the light-emitting diode system is currently widely used, and it can be applied to various technical fields, and the application of thinning and small-sized products is more and more extensive, so that more and more products are oriented toward the wafer size. Technology development of the Chip Scale Package. For example, many current applications using light-emitting diodes use a flip chip package to reduce the size and thickness to a wafer size package.

Please refer to FIG. 1A, which is a schematic structural view of a conventional light-emitting diode. The light-emitting diode 1 includes a transparent substrate 11, epitaxial layers 12, 13, an insulating layer 14, and electrodes 15, 16. The electrodes 15, 16 in Fig. 1A are horizontal electrode structures, and in the process, a metal ball 17 is placed over the electrode 16 so that the heights of the electrodes 15, 16 are uniform. However, the process of arranging the metal balls 17 above the electrodes 16 not only makes the difference in the height of the electrodes 15, 16 often results in poor product yield, but also increases manufacturing risk and cost.

Please refer to FIG. 1B, which is a schematic diagram of the structure of the light-emitting diode of FIG. 1A. In order to overcome the problem that the metal balls 17 in FIG. 1A are arranged to cause the electrodes 15 and 16 to have a high and low drop, in the structure of the light-emitting diode 1 of FIG. 1B, a groove is formed by the insulating layer 14, and the electrode 16 is placed in the groove. In order to make the heights of the electrodes 15, 16 coincide. However, such a process must not only add a procedure for providing a groove, but also the substrate 11 used in the flip chip process and the flip chip process of FIG. 1A must use the light-transmissive substrate 11, thereby raising the electrodes 15, 16 Difficulties in package alignment.

In addition, in the process of the light-emitting diode, the electrode is generally electrically connected by wire bonding, and the wire and the body of the light-emitting diode are packaged, and then disposed on the circuit board by a bonding technology to form a surface-adhesive element (SMD). Generally, the finished thickness of the surface adhesive component has a thickness of 600 um, 400 um, 300 um, and the like. However, since the process of wire bonding requires the use of solder balls to bond wires on the surface of the light-emitting diode, not only a large amount of area is occupied, but also a package process must be performed later, so that the overall volume of the light-emitting diode becomes large and cannot be reduced. The purpose of size and thinning.

Furthermore, the technique of using a flip-chip package to reduce the size and thickness is to form a structure of a light-emitting diode using a common gold process, and has a higher standard in the use of a common-gold process, thereby increasing manufacturing. cost.

Accordingly, how to provide a process system closer to the wafer size package is an urgent research topic.

In view of the above problems, the present invention discloses a light-emitting element including a substrate, a bonding metal layer, a conductive oxide layer, an epitaxial layer, an insulating layer, a first mother-ion contact layer, a second mother-ion contact layer, and a third mother-ion contact layer. And wires. The bonding metal layer is disposed on the surface of the first portion of the substrate. A conductive oxide layer is disposed on the bonding metal layer. The epitaxial layer is disposed on the surface of the first portion of the conductive oxide layer. The insulating layer is disposed on the first side of the bonding metal layer, the conductive oxide layer and the epitaxial layer, and on the surface of the first portion of the epitaxial layer. The first ohmic contact layer is disposed on the surface of the second portion of the substrate. The second mother-ion contact layer is disposed on the surface of the second portion of the epitaxial layer. The third ohmic mother contact layer is disposed on the surface of the second portion of the conductive oxide layer. The wire is electrically connected to the first ohmic mother contact layer and the second ohmic mother contact layer.

According to the above, in the prior art, the metal ball is disposed above the electrode and the groove is arranged to make the height of the electrode uniform. This process can control the electrode height more accurately by setting the wire manufacturing process to avoid generation. The problem of high and low electrode drop. Furthermore, the present light-emitting element is connected to the mother-ion contact layer by a process of setting a wire instead of using a wire bonding, thereby reducing the packaging process required for the wire bonding process, thereby reducing the volume of the light-emitting component. In addition, after the light-emitting element of the present invention forms a wire on the mother-ion contact layer, the step of directly bonding to the circuit board can be performed, thereby reducing the volume of the package and reducing the equipment required for the packaging process, thereby further reducing the manufacturing cost. The simplification of the program and the efficiency of rapid production are achieved in order to be widely applied to the technical field of wafer size packaging.

1‧‧‧Lighting diode

11‧‧‧Substrate

12, 13‧‧‧ epitaxial layer

14‧‧‧Insulation

15, 16‧‧‧ electrodes

17‧‧‧metal ball

3, 4‧‧‧Lighting elements

31‧‧‧First substrate

32, 44‧‧‧ epitaxial layer

33, 43‧‧‧ conductive oxide layer

34‧‧‧First joint metal layer

35‧‧‧second substrate

36‧‧‧Second joint metal layer

37, 371, 372, 451, 452 ‧ ‧ insulation

38, 46‧‧‧ wire

41‧‧‧Substrate

42‧‧‧Join metal layer

47‧‧‧ Non-conductive oxide layer

471‧‧‧Contact hole

E1‧‧‧ first European mother contact layer

E2‧‧‧Second European mother contact layer

E3‧‧‧ third European mother contact layer

S2, S4, S6, S8, S10, S12, S14, S16, S18, S20, S22, S24, S26, S28, S30‧‧

1A is a schematic structural view of a conventional light-emitting diode; FIG. 1B is a schematic diagram of a light-emitting diode structure of FIG. 1A; FIG. 2 is a flow chart of a method for manufacturing a light-emitting element; FIG. The 3H figure is a flow chart of the process structure of the creative light-emitting element; the fourth figure is a schematic structural view of the light-emitting element of the present invention; and the fifth figure is a schematic structural view of another light-emitting element.

Please refer to FIG. 2 and FIG. 3A to FIG. 3H together, which is a flowchart of the manufacturing method of the light-emitting element and a flow chart of the process structure. The manufacturing method of the light-emitting element 3 includes the following steps: In step S2, the first substrate 31 is disposed. In step S4, an epitaxial layer 32 is formed on the first substrate 31. In step S6, a conductive oxide layer 33 is formed on the epitaxial layer 32. In step S8, a first bonding metal layer 34 is formed on the conductive oxide layer 33. In step S10, the second substrate 35 is disposed. In step S12, a second bonding metal layer 36 is formed on the second substrate 35. In step S14, the first bonding metal layer 34 and the second bonding metal layer 36 are bonded. In step S16, the first substrate 31 is removed. In step S18, a portion of the epitaxial layer 32 is removed. In step S20, a portion of the first bonding metal layer 34, the second bonding metal layer 36, and the conductive oxide layer 33 are removed. In step S22, an insulating layer 37 is formed to cover the second substrate 35, the first bonding metal layer 34, the second bonding metal layer 36, the conductive oxide layer 33, and the epitaxial layer 32. In step S24, a portion of the insulating layer 37 on the second substrate 35, the conductive oxide layer 33 and the epitaxial layer 32 is removed to expose a portion of the second substrate 35. The surface, the surface of the conductive oxide layer 33 and the surface of the epitaxial layer 32. In step S26, a first mother-ion contact layer E1 is formed on the surface of the second substrate 35, and a second mother-ion contact layer E2 is formed on the surface of the epitaxial layer 32. In step S28, a third mother-ion contact layer E3 is formed on the surface of the conductive oxide layer 33. In step S30, a wire 38 is formed to connect the first mother-ion contact layer E1 and the second mother-ion contact layer E2.

In the present creation, the second substrate 35 includes a non-conductive substrate, and a light-transmitting substrate or an opaque substrate may be used.

In the step of removing a portion of the epitaxial layer 32, the epitaxial layer 32 of the first side and the second side is removed to expose a surface of the portion of the conductive oxide layer 33 so as to be disposed after the insulating layer 37 is formed. The third European mother contact layer E3.

The step of removing a portion of the first bonding metal layer 34, the second bonding metal layer 36, and the conductive oxide layer 33 includes removing the first bonding metal layer 34 of the first side, the second bonding metal layer 36 of the first side, and The conductive oxide layer 33 on the first side is formed to form the insulating layer 37 after the removal, and the first mother-ion contact layer E1 is disposed on the surface of the second substrate 35.

It should be noted that, as shown in FIG. 3F, after removing a portion of the insulating layer 37, insulating layers 371, 372 are formed, which cover a portion of the surface of the second substrate 35, a portion of the surface of the epitaxial layer 32, and a cladding portion. A first bonding metal layer 34 on one side, a second bonding metal layer 36 on the first side, and a conductive oxide layer 33 on the first side.

Further, the first ohmic mother contact layer E1, the second ohmic mother contact layer E2, and the third ohmic mother contact layer E3 are not provided in the order of the order, but may be provided simultaneously after the insulating layers 371 and 372 are formed.

In the above steps, the thickness of the second substrate 35 is further reduced to reduce the overall thickness of the light-emitting element 3. The overall thickness of the light-emitting element 3 is between 80 and 350 microns, and its actual thickness can be made according to practical design and requirements, which is much smaller than the thickness of the light-emitting element in the prior art. The thickness of the second substrate 35 is reduced, so that the silver paste or the solder paste can be smoothly electrically connected to the signal of the circuit board and the mother-ion contact layer, and the light-emitting element 3 is adhered to the circuit board by an adhesive technique. Adhesion techniques include surface adhesion techniques and are not limited to this creation.

Further, in the present creation, the wire 38 includes any electrically conductive material for transmitting signals of the first mother-ion contact layer E1 and the second mother-ion contact layer E2. Therefore, the conduction of the first ohmic mother contact layer E1 and the second ohmic contact layer E2 is transmitted by the wires 38 instead of the first ohmic mother contact layer E1 and the second ohmic contact layer E2 by a wire bonding process, thereby reducing the package. The procedure of the light-emitting element can achieve the purpose of downsizing and thinning, and is further applied to the technical field of wafer size packaging.

Please refer to FIG. 4, which is a schematic structural view of the light-emitting element of the present invention. The light-emitting element 4 includes a substrate 41, a bonding metal layer 42, a conductive oxide layer 43, an epitaxial layer 44, an insulating layer 451, 452, a first mother-ion contact layer E1, a second mother-ion contact layer E2, and a third mother-ion contact layer. E3 and wire 46. The bonding metal layer 42 is disposed on the surface of the first portion of the substrate 41. The conductive oxide layer 43 is disposed on the bonding metal layer 42. The epitaxial layer 44 is disposed on the surface of the first portion of the conductive oxide layer 43. The insulating layer 451 is disposed on the first side of the bonding metal layer 42 , the conductive oxide layer 43 and the epitaxial layer 44 to And disposed on the surface of the first portion of the epitaxial layer 44. The first ohmic contact layer E1 is disposed on the surface of the second portion of the substrate 41. The second mother-ion contact layer E2 is disposed on the surface of the second portion of the epitaxial layer 44. The third ohmic mother contact layer E3 is disposed on the surface of the second portion of the conductive oxide layer 43. The wire 46 is electrically connected to the first ohmic mother contact layer E1 and the second ohmic mother contact layer E2.

Please refer to FIG. 5, which is a schematic structural view of another light-emitting element of the present invention. As described above, the present light-emitting device further includes a non-conductive oxide layer 47 disposed between the epitaxial layer 44 and the conductive oxide layer 43. The non-conductive oxide layer 47 includes at least one of tantalum nitride (SiNy), bismuth oxynitride (SiON), or cerium oxide. In addition, the non-conductive oxide layer 47 includes at least one via 471, which communicates with the epitaxial layer and the conductive oxide layer 43 to form an epitaxial contact with the epitaxial layer 44. Further, the contact hole 471 is made of a metal material, and includes a metal material such as zinc aluminide (AuZn), gold telluride (AuBe), chromium (Cr), or gold (Au).

In one embodiment of the present invention, the substrate 41 includes a non-conductive substrate. The non-conductive substrate includes a ceramic substrate, an aluminum nitride substrate, or an alumina substrate. Further, in the present creation, the substrate 41 may use a light-transmitting substrate or an opaque substrate.

The insulating layer 451 includes hafnium oxide or tantalum nitride for isolating the first mother-ion contact layer E1 and the second mother-ion contact layer E2. In another embodiment of the present invention, the insulating layer 452 is further disposed on the surface of the third portion of the epitaxial layer 44, and disposed between the second side of the epitaxial layer 44 and the third mother-ion contact layer E3. The third Ether contact layer E3 is further insulated to avoid short circuits.

The width of the wire 46 is less than the diameter of the solder ball in the wire bonding process. general In terms of the wire bonding process, the diameter of the solder ball used is greater than 100um, but in this creation, since the process of wire bonding is not required, the wires of various widths can be easily fabricated according to the practical requirements and design. For example, wires having a width greater than 5 microns. In comparison, the system is much smaller than the diameter of the solder ball, thus achieving cost-saving effects.

The light-emitting element 4 is adhered to a circuit board by an adhesive technology, and the circuit board is electrically connected to the second mother-ion contact layer E2 and the third mother-ion contact layer E3, and electrically connected to the wire 46 and the third with silver paste or solder paste. Oumu contact layer E3. In the present invention, the overall thickness of the light-emitting element 4 is between 80 and 350 micrometers, and the actual thickness can be made according to practical design and requirements, and the thickness of the light-emitting component can be greatly reduced compared with the prior art. .

In summary, compared with the prior art, the metal ball is disposed above the electrode and the groove is arranged to make the height of the electrode uniform. This process can control the electrode height more accurately by setting the wire manufacturing process to avoid generation. The problem of high and low electrode drop. Furthermore, the present light-emitting element is connected to the mother-ion contact layer by a process of setting a wire instead of using a wire bonding, thereby reducing the packaging process required for the wire bonding process, thereby reducing the volume of the light-emitting component. In addition, after the light-emitting element of the present invention forms a wire on the mother-ion contact layer, the step of directly bonding to the circuit board can be performed, thereby reducing the volume of the package and reducing the equipment required for the packaging process, thereby further reducing the manufacturing cost. The simplification of the program and the efficiency of rapid production are achieved in order to be widely applied to the technical field of wafer size packaging.

4‧‧‧Lighting elements

41‧‧‧Substrate

42‧‧‧Join metal layer

43‧‧‧conductive oxide layer

44‧‧‧Elevation layer

451, 452‧‧ ‧ insulation

46‧‧‧Wire

E1‧‧‧ first European mother contact layer

E2‧‧‧Second European mother contact layer

E3‧‧‧ third European mother contact layer

Claims (14)

A light-emitting element comprises: a substrate; a bonding metal layer disposed on a surface of the first portion of the substrate; a conductive oxide layer disposed on the bonding metal layer; and an epitaxial layer disposed on the conductive oxide a first portion of the surface of the layer; an insulating layer disposed on the bonding metal layer, the conductive oxide layer and the first side of the epitaxial layer, and the first portion of the epitaxial layer a first ohmic contact layer disposed on a surface of a second portion of the substrate; a second ohmic contact layer disposed on a surface of the second portion of the epitaxial layer; An ohmic contact layer disposed on a surface of the second portion of the conductive oxide layer; and a wire electrically connected to the first ohmic mother contact layer and the second ohmic contact layer. The light-emitting element of claim 1, wherein the insulating layer comprises hafnium oxide or tantalum nitride. The light-emitting element of claim 1, wherein the insulating layer further comprises a surface disposed on a third portion of the epitaxial layer, and a second side of the epitaxial layer and the first Between three European mothers and the contact layer. The illuminating element of claim 1, wherein the wire has a width smaller than a diameter of one of the solder balls. The illuminating device of claim 1, further comprising a circuit board electrically connecting the second ohmic mother contact layer and the third ohmic contact layer. The illuminating element of claim 5, wherein the circuit board is electrically connected to the wire and the third ohmic contact layer by a silver paste or a solder paste. The light-emitting element of claim 1, wherein one of the light-emitting elements has a thickness of between 80 and 350 microns. The light-emitting element of claim 1, wherein the substrate comprises a non-conductive substrate. The light-emitting element according to claim 8, wherein the non-conductive substrate comprises a ceramic substrate, an aluminum nitride substrate or an alumina substrate. The light-emitting element of claim 1, wherein the substrate comprises a light-transmitting substrate or an opaque substrate. The light-emitting device of claim 1, further comprising a non-conductive oxide layer disposed between the epitaxial layer and the conductive oxide layer. The illuminating element of claim 11, wherein the non-conductive oxide layer comprises at least one connection hole connecting the epitaxial layer and the conductive oxide layer. The light-emitting element of claim 12, wherein the connection hole is a metal material. The light-emitting element of claim 13, wherein the metal material comprises zincated gold, gold telluride, chromium or gold.