TWM522463U - Adsorption type fixture with high stability for chip cutting - Google Patents
Adsorption type fixture with high stability for chip cutting Download PDFInfo
- Publication number
- TWM522463U TWM522463U TW104221114U TW104221114U TWM522463U TW M522463 U TWM522463 U TW M522463U TW 104221114 U TW104221114 U TW 104221114U TW 104221114 U TW104221114 U TW 104221114U TW M522463 U TWM522463 U TW M522463U
- Authority
- TW
- Taiwan
- Prior art keywords
- contact layer
- elastic contact
- base body
- holes
- wafer cutting
- Prior art date
Links
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
本新型是有關於一種半導體加工治具,特別是指一種具有高穩定性的晶片切割用吸附式治具。The present invention relates to a semiconductor processing jig, and more particularly to an adsorption jig for wafer cutting with high stability.
參閱圖1,習知的一種吸附式治具1,包含一連接至一抽氣裝置(圖未示)並具有複數第一通孔(圖未示)的吸附頭座11,及一設置於該吸附頭座11的橡膠層12,該橡膠層12具有複數分別連通該等第一通孔的第二通孔121。Referring to FIG. 1, a conventional adsorption jig 1 includes a suction head holder 11 connected to an air extracting device (not shown) and having a plurality of first through holes (not shown), and a The rubber layer 12 of the head block 11 is adsorbed, and the rubber layer 12 has a plurality of second through holes 121 respectively communicating with the first through holes.
在晶圓的切割製程中,該吸附式治具1架設於一切割機(圖未示)上,並連接該抽氣裝置,再將一晶圓(圖未示)設置於該橡膠層12上,切割過程中,該抽氣裝置吸氣,並透過該等第二通孔121吸附該晶圓,然而,由於該橡膠層12的邊緣無支撐物支撐,當該切割機的一切割刀(圖未示)通過該橡膠層12的邊緣時,該橡膠層12會晃動,使得該晶圓無法穩定地吸附於該吸附式治具1,容易發生飛落或旋轉的情形,並在進入下一台切割機時,會因移位而無法放置於另一吸附式治具1,或是切割後的小塊晶片無法被吸附,造成掉料或不良品的情形,進而降低產品的良率。In the wafer cutting process, the adsorption jig 1 is mounted on a cutting machine (not shown), and is connected to the air extracting device, and then a wafer (not shown) is disposed on the rubber layer 12. During the cutting process, the air suction device inhales and adsorbs the wafer through the second through holes 121. However, since the edge of the rubber layer 12 is supported without support, when the cutting blade of the cutting machine (Fig. When the edge of the rubber layer 12 is passed, the rubber layer 12 is shaken, so that the wafer cannot be stably adsorbed to the adsorption jig 1 and is liable to fly or rotate, and enters the next stage. When the cutting machine is used, it cannot be placed on another adsorption type fixture 1 due to displacement, or the small wafer after cutting cannot be adsorbed, resulting in a situation of dropping or defective products, thereby reducing the yield of the product.
因此,本新型之目的,即在提供一種可提高產品良率的具有高穩定性的晶片切割用吸附式治具。Therefore, the object of the present invention is to provide an adsorption jig for wafer cutting with high stability which can improve the yield of a product.
於是,本新型具有高穩定性的晶片切割用吸附式治具,適用於連接至一抽氣裝置,並包含一吸附頭座、一彈性接觸層及一支撐單元。Therefore, the novel high-stability adsorption tool for wafer cutting is suitable for being connected to an air suction device, and comprises an adsorption head holder, an elastic contact layer and a supporting unit.
該吸附頭座包括一連接至該抽氣裝置的基座本體、複數分別貫穿該基座本體之兩相反側面的第一通孔,及一形成於該基座本體的頂面且連通該等第一通孔的容置凹槽。The adsorption head base includes a base body connected to the air suction device, a plurality of first through holes respectively penetrating through opposite sides of the base body, and a top surface formed on the base body and communicating with the first A through hole accommodating groove.
該彈性接觸層設置於該容置凹槽,並包括一呈水平的接觸面,及複數貫穿該接觸面且分別連通該等第一通孔的第二通孔。The elastic contact layer is disposed in the receiving recess, and includes a horizontal contact surface, and a plurality of second through holes extending through the contact surface and respectively communicating the first through holes.
該支撐單元包括複數設置於該基座本體且緊抵於該彈性接觸層邊緣的擋牆。The support unit includes a plurality of retaining walls disposed on the base body and abutting against an edge of the elastic contact layer.
本新型之功效在於:藉由設置該支撐單元,加強該彈性接觸層的結構穩定性,使該彈性接觸層在切割過程中不容易晃動,該晶圓能穩定地吸附於該彈性接觸層,達到提高產品良率的效果。The effect of the novel is that the structural stability of the elastic contact layer is strengthened by providing the supporting unit, so that the elastic contact layer is not easily shaken during the cutting process, and the wafer can be stably adsorbed on the elastic contact layer. Improve product yield.
參閱圖2至圖4,本新型具有高穩定性的晶片切割用吸附式治具的一實施例,包含一吸附頭座2、一彈性接觸層3及一支撐單元4。Referring to FIG. 2 to FIG. 4, an embodiment of the present invention has a highly stable adsorption jig for wafer cutting, comprising an adsorption head holder 2, an elastic contact layer 3 and a support unit 4.
該吸附頭座2包括一基座本體21、複數分別貫穿該基座本體21之兩相反側面的第一通孔22,及一形成於該基座本體21的頂面且連通該等第一通孔22的容置凹槽23。The squeezing head base 2 includes a base body 21, a plurality of first through holes 22 respectively extending through opposite sides of the base body 21, and a top surface formed on the base body 21 and communicating the first through holes. The hole 22 accommodates the groove 23.
該彈性接觸層3以貼合的方式設置於該容置凹槽23,並包括一呈水平的接觸面31、複數貫穿該接觸面31並分別連通該等第一通孔22的第二通孔32、複數形成於該接觸面31並分別圍繞該等第二通孔32的氣槽33,及複數形成於該接觸面31且呈縱橫交錯地分別圍繞該等第二通孔32與該等氣槽33的主切割槽34。在本實施例中,該彈性接觸層3的材質為橡膠,但不以此為限。The elastic contact layer 3 is disposed on the accommodating recess 23 in a conforming manner, and includes a horizontal contact surface 31, a plurality of second through holes extending through the contact surface 31 and respectively communicating the first through holes 22. 32. A plurality of air grooves 33 formed on the contact surface 31 and surrounding the second through holes 32, and a plurality of air grooves 33 formed on the contact surface 31 and surrounding the second through holes 32 and the air in a crisscross manner The main cutting groove 34 of the groove 33. In this embodiment, the material of the elastic contact layer 3 is rubber, but not limited thereto.
該支撐單元4包括複數設置於該基座本體21且緊抵於該彈性接觸層3邊緣的擋牆41,及複數分別將該等擋牆41鎖固於該基座本體21的鎖固件42。在本實施例中,該等鎖固件42分別為一螺絲,但不以此為限。The supporting unit 4 includes a plurality of retaining walls 41 disposed on the base body 21 and abutting against the edge of the elastic contact layer 3, and a plurality of locking members 42 respectively locking the retaining walls 41 to the base body 21. In this embodiment, the locks 42 are respectively a screw, but are not limited thereto.
該等擋牆41呈L字形,並分別具有一設置於該基座本體21頂面的水平板部411、一由該水平板部411向上延伸且緊抵於該彈性接觸層3邊緣的垂直板部412,及複數形成於該垂直板部412且分別連通於該等主切割槽34的副切割槽413。The retaining walls 41 are L-shaped and have a horizontal plate portion 411 disposed on the top surface of the base body 21, and a vertical plate extending upward from the horizontal plate portion 411 and abutting against the edge of the elastic contact layer 3. The portion 412 and the plurality of sub-cut grooves 413 formed in the vertical plate portion 412 and communicating with the main cutting grooves 34, respectively.
參閱圖4及圖5,實際使用時,將本實施例架設於一產線(圖未示)的切割機(圖未示)上,並將一抽氣裝置8連接至該基座本體21,再將一晶圓9設置於該彈性接觸層3的接觸面31上,接著,啟動該抽氣裝置8,透過該等第一通孔22、該等第二通孔32及該等氣槽33之間的氣體所形成的吸力吸附該晶圓9,切割過程中,一切割刀(圖未示)會行經該等擋牆41的副切割槽413與該彈性接觸層3的主切割槽34,將該晶圓9切割成小塊的晶片,以進行後續的加工程序。Referring to FIG. 4 and FIG. 5, in actual use, the embodiment is mounted on a cutting machine (not shown) of a production line (not shown), and an air extracting device 8 is connected to the base body 21, A wafer 9 is disposed on the contact surface 31 of the elastic contact layer 3, and then the air suction device 8 is activated to pass through the first through holes 22, the second through holes 32, and the air grooves 33. The suction force formed by the gas adsorbs the wafer 9. During the cutting process, a cutting blade (not shown) passes through the secondary cutting groove 413 of the retaining wall 41 and the main cutting groove 34 of the elastic contact layer 3, The wafer 9 is diced into small pieces of wafers for subsequent processing.
藉由在該彈性接觸層3的邊緣設置該等擋牆41,當該切割刀通過該彈性接觸層3的邊緣時,該彈性接觸層3不容易晃動,因此,切割過程中,該晶圓9不會發生飛落或旋轉的情形,且切割後的晶片也能不移位地吸附於該彈性接觸層3,進而提高產品的良率。By providing the retaining walls 41 at the edges of the elastic contact layer 3, when the cutting blade passes the edge of the elastic contact layer 3, the elastic contact layer 3 is not easily shaken, and therefore, the wafer 9 is cut during the cutting process. The flying or rotating condition does not occur, and the cut wafer can also be adsorbed to the elastic contact layer 3 without displacement, thereby improving the yield of the product.
值得一提的是,本實施例適用於「全切」的晶圓切割工法,亦即切穿該晶圓9成複數完整的晶片,該等副切割槽413使該切割刀經過該彈性接觸層3的邊緣時不會被該等擋牆41阻擋,該等主切割槽34使該切割刀切割該晶圓9時不會被該接觸面31阻擋。然而,該彈性接觸層3也可以不設置該等主切割槽34,而應用於「半切」的晶圓切割工法,亦即未全完切穿該晶圓9,此時,該等擋牆41也不須設置該等副切割槽413。It should be noted that the present embodiment is applicable to a "full-cut" wafer cutting method, that is, cutting through the wafer 9 into a plurality of complete wafers, and the auxiliary cutting grooves 413 pass the cutting blade through the elastic contact layer. The edges of 3 are not blocked by the retaining walls 41, and the main cutting grooves 34 prevent the cutting blades from being blocked by the contact faces 31 when they are cut. However, the elastic contact layer 3 may not be provided with the main cutting grooves 34, but may be applied to a "half-cut" wafer cutting method, that is, the wafer 9 is not completely cut through, and at this time, the retaining walls 41 It is not necessary to provide these sub-cut grooves 413.
綜上所述,本新型藉由設置該支撐單元4,加強該彈性接觸層3的結構穩定性,使該彈性接觸層3在切割過程中不容易晃動,該晶圓9能穩定地吸附於該彈性接觸層3,達到提高產品良率的效果,故確實能達成本新型之目的。In summary, the present invention enhances the structural stability of the elastic contact layer 3 by providing the supporting unit 4, so that the elastic contact layer 3 is not easily shaken during the cutting process, and the wafer 9 can be stably adsorbed on the The elastic contact layer 3 achieves the effect of improving the yield of the product, so that the object of the present invention can be achieved.
惟以上所述者,僅為本新型之實施例而已,當不能以此限定本新型實施之範圍,凡是依本新型申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本新型專利涵蓋之範圍內。However, the above is only the embodiment of the present invention, and when it is not possible to limit the scope of the present invention, all the simple equivalent changes and modifications according to the scope of the patent application and the contents of the patent specification are still This new patent covers the scope.
2‧‧‧吸附頭座
21‧‧‧基座本體
22‧‧‧第一通孔
23‧‧‧容置凹槽
3‧‧‧彈性接觸層
31‧‧‧接觸面
32‧‧‧第二通孔
33‧‧‧氣槽
34‧‧‧主切割槽
4‧‧‧支撐單元
41‧‧‧擋牆
411‧‧‧水平板部
412‧‧‧垂直板部
413‧‧‧副切割槽
42‧‧‧鎖固件
8‧‧‧抽氣裝置
9‧‧‧晶圓2‧‧‧Adsorption head
21‧‧‧Base body
22‧‧‧ first through hole
23‧‧‧ accommodating grooves
3‧‧‧Elastic contact layer
31‧‧‧Contact surface
32‧‧‧Second through hole
33‧‧‧ gas trough
34‧‧‧Main cutting slot
4‧‧‧Support unit
41‧‧‧Retaining wall
411‧‧‧ horizontal board
412‧‧‧Vertical board
413‧‧‧Subcutting slot
42‧‧‧Locker
8‧‧‧Exhaust device
9‧‧‧ wafer
本新型之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是一立體圖,說明習知的一種吸附式治具; 圖2是一立體分解圖,說明本新型具有高穩定性的晶片切割用吸附式治具的一實施例; 圖3是該實施例的一立體圖; 圖4是該實施例的一局部放大立體圖;及 圖5是一示意圖,說明一晶圓吸附於該實施例待切割的情形。Other features and effects of the present invention will be apparent from the following description of the drawings, wherein: FIG. 1 is a perspective view illustrating a conventional adsorption tool; FIG. 2 is an exploded perspective view of the present invention; FIG. 3 is a perspective view of the embodiment; FIG. 4 is a partially enlarged perspective view of the embodiment; FIG. 4 is a partially enlarged perspective view of the embodiment; The circle is adsorbed to the case of this embodiment to be cut.
2‧‧‧吸附頭座 2‧‧‧Adsorption head
21‧‧‧基座本體 21‧‧‧Base body
3‧‧‧彈性接觸層 3‧‧‧Elastic contact layer
31‧‧‧接觸面 31‧‧‧Contact surface
32‧‧‧第二通孔 32‧‧‧Second through hole
33‧‧‧氣槽 33‧‧‧ gas trough
4‧‧‧支撐單元 4‧‧‧Support unit
41‧‧‧擋牆 41‧‧‧Retaining wall
411‧‧‧水平板部 411‧‧‧ horizontal board
412‧‧‧垂直板部 412‧‧‧Vertical board
42‧‧‧鎖固件 42‧‧‧Locker
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104221114U TWM522463U (en) | 2015-12-30 | 2015-12-30 | Adsorption type fixture with high stability for chip cutting |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104221114U TWM522463U (en) | 2015-12-30 | 2015-12-30 | Adsorption type fixture with high stability for chip cutting |
Publications (1)
Publication Number | Publication Date |
---|---|
TWM522463U true TWM522463U (en) | 2016-05-21 |
Family
ID=56511021
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW104221114U TWM522463U (en) | 2015-12-30 | 2015-12-30 | Adsorption type fixture with high stability for chip cutting |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWM522463U (en) |
-
2015
- 2015-12-30 TW TW104221114U patent/TWM522463U/en unknown
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI609418B (en) | Method for manufacturing semiconductor device and wafer mounting apparatus | |
JP6144107B2 (en) | Wafer cutting method | |
JP2009099681A (en) | Substrate dicing method | |
JP2015188968A (en) | Method and device for parting resin sheet | |
CN205542736U (en) | Wafer cutting is with absorption formula tool with high adsorption performance | |
JPWO2018185932A1 (en) | Semiconductor manufacturing method | |
TWM522463U (en) | Adsorption type fixture with high stability for chip cutting | |
KR102334121B1 (en) | Chuck table | |
TWM522462U (en) | Adsorption type fixture with high adsorptive power for chip cutting | |
JPH031172Y2 (en) | ||
JP2010147316A (en) | Method and apparatus for expanding tape | |
JP5330907B2 (en) | Method for dividing brittle material substrate | |
TWM528519U (en) | Adsorption type fixture for chip cutting with high adsorptive capability | |
JP2014205205A (en) | Workpiece holding device | |
JP2010093103A (en) | Tool for division working | |
TWM525541U (en) | Adsorption type fixture for chip cutting with high adsorbent | |
TWM525542U (en) | Suction type tool with high air-tightness for chip cutting | |
TW201936476A (en) | Peeling method for peeling off substrate from support plate | |
JP2003007648A (en) | Semiconductor wafer dividing system | |
JP2013058653A (en) | Method for dividing plate-like object | |
JP2016078216A (en) | Cutting tool device | |
CN205488084U (en) | Wafer cutting is with absorption formula tool with high stability | |
JP2011230153A (en) | Method and device for processing wafer | |
JP6462414B2 (en) | Splitting device | |
CN205452248U (en) | Wafer cutting is with absorption formula tool with high gas tightness |