TWM462947U - Package substrate - Google Patents

Package substrate Download PDF

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Publication number
TWM462947U
TWM462947U TW101211202U TW101211202U TWM462947U TW M462947 U TWM462947 U TW M462947U TW 101211202 U TW101211202 U TW 101211202U TW 101211202 U TW101211202 U TW 101211202U TW M462947 U TWM462947 U TW M462947U
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TW
Taiwan
Prior art keywords
conductive
electrical contact
contact pads
package substrate
layer
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Application number
TW101211202U
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Chinese (zh)
Inventor
Dyi-Chung Hu
Ying-Tung Wang
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Unimicron Technology Corp
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Priority to TW101211202U priority Critical patent/TWM462947U/en
Publication of TWM462947U publication Critical patent/TWM462947U/en

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Abstract

Disclosed is a package substrate, comprising a substrate body having electrical contact pads formed thereon, an insulating protection layer disposed on the substrate body and the electrical contact pads, and conductive bumps formed on the insulating protection layer for corresponding to the electrical contact pads, wherein each of the conductive bumps is electrically connected to a respective electrical contact pads by two or more conductive pillars which are formed on conductive bumps, thereby preventing the top central area of the conductive bumps from collapsing and caving in and thus resulting in defective electrical contact between the bumps and electronic components.

Description

封裝基板 Package substrate

本創作係關於一種封裝基板,尤指一種具導電凸塊之封裝基板。 The present invention relates to a package substrate, and more particularly to a package substrate having conductive bumps.

如第1圖所示,係為習知用以承載半導體晶片之封裝基板1之剖面示意圖,該封裝基板1係包括一基板本體10、複數電性接觸墊11、絕緣保護層12、以及複數導電凸塊13。 FIG. 1 is a schematic cross-sectional view of a package substrate 1 for carrying a semiconductor wafer. The package substrate 1 includes a substrate body 10, a plurality of electrical contact pads 11, an insulating protective layer 12, and a plurality of conductive layers. Bump 13.

該基板本體10具有至少一介電層100、設於該介電層100上之線路層101、及設於該介電層100中之複數導電盲孔102。該電性接觸墊11設於最外層之該介電層100上,且利用該導電盲孔102電性連接該線路層101和該電性接觸墊11。該絕緣保護層12形成於該最外層之該介電層100與各該電性接觸墊11上,並在對應各該電性接觸墊11之位置上形成開孔120,以令各該電性接觸墊11對應外露於各該開孔120。該導電凸塊13係以電鍍銅材之方式形成於各該開孔120中,以電性連接該電性接觸墊11,且該導電凸塊13具有位於該開孔120中之柱體130,以令單一個該導電凸塊13藉由單一個柱體130電性連接單一個該電性接觸墊11。 The substrate body 10 has at least one dielectric layer 100 , a circuit layer 101 disposed on the dielectric layer 100 , and a plurality of conductive vias 102 disposed in the dielectric layer 100 . The electrical contact pad 11 is disposed on the dielectric layer 100 of the outermost layer, and the circuit layer 101 and the electrical contact pad 11 are electrically connected by the conductive via hole 102. The insulating protective layer 12 is formed on the outermost layer of the dielectric layer 100 and each of the electrical contact pads 11, and an opening 120 is formed at a position corresponding to each of the electrical contact pads 11 to make each of the electrical properties. The contact pads 11 are correspondingly exposed to the openings 120. The conductive bumps 13 are formed in the openings 120 to electrically connect the electrical contact pads 11 , and the conductive bumps 13 have the pillars 130 in the openings 120 . The single conductive bumps 13 are electrically connected to the single one of the electrical contact pads 11 by a single pillar 130.

惟,習知封裝基板1中,因各該電性接觸墊11上僅對應有一開孔120,且因電鍍銅材的製程特性,故當電鍍形成該導電凸塊13時,該開孔120與開孔周圍因為高度落差 問題,電鍍該柱體130時,會有柱體130側邊高度高於柱體130中心處之情況,因而造成該導電凸塊13之頂面中間形成凹陷處K,致使該導電凸塊13之頂面無法平整,導致後續製程中,該導電凸塊13無法有效結合諸如晶片等電子元件或載板,進而影響電性連接之品質。 However, in the conventional package substrate 1, since each of the electrical contact pads 11 corresponds to only one opening 120, and due to the process characteristics of the electroplated copper material, when the conductive bumps 13 are formed by electroplating, the openings 120 and Around the opening due to the height drop The problem is that when the pillar 130 is plated, the height of the side of the pillar 130 is higher than the center of the pillar 130, so that a recess K is formed in the middle of the top surface of the conductive bump 13, so that the conductive bump 13 The top surface cannot be flattened, so that the conductive bumps 13 cannot effectively combine electronic components such as wafers or carrier boards in subsequent processes, thereby affecting the quality of the electrical connections.

然而,如何克服習知技術之導電凸塊頂面凹陷之問題,實為一重要課題。 However, how to overcome the problem of the top surface depression of the conductive bumps of the prior art is an important issue.

為解決上述習知技術之問題,本創作遂提供一種封裝基板,係於該絕緣保護層上形成有複數開孔,以令單一個電性接觸墊對應至少二個該開孔,且導電凸塊具有位於各該開孔中之導電柱,故單一個導電凸塊係藉由至少二個導電柱電性連接單一個電性接觸墊。 In order to solve the above problems in the prior art, the present invention provides a package substrate, wherein a plurality of openings are formed on the insulating protection layer, so that a single electrical contact pad corresponds to at least two of the openings, and the conductive bumps The conductive pillars are located in each of the openings, so that a single conductive bump is electrically connected to the single electrical contact pad by at least two conductive pillars.

由上可知,本創作封裝基板於電鍍導電凸塊之製程中,當鍍出導電柱時,會一併鍍出該導電凸塊之部分中間金屬材,亦即當該導電凸塊側邊開始形成金屬材時,導電凸塊中間已鍍出部分金屬材,再利用電鍍製程之特性,使該導電凸塊之頂面能呈現平整表面。故相較於習知技術,本創作可避免該導電凸塊之頂面中間形成凹陷處,以於後續製程中,該導電凸塊能有效結合電子元件,而提升電性連接之品質。 It can be seen from the above that in the process of electroplating conductive bumps, when the conductive pillars are plated, part of the intermediate metal material of the conductive bumps is plated together, that is, when the sides of the conductive bumps begin to form. In the case of a metal material, a part of the metal material is plated in the middle of the conductive bump, and then the characteristics of the electroplating process are used to make the top surface of the conductive bump have a flat surface. Therefore, compared with the prior art, the present invention can avoid the formation of a depression in the middle of the top surface of the conductive bump, so that in the subsequent process, the conductive bump can effectively combine the electronic components and improve the quality of the electrical connection.

以下藉由特定的具體實施例說明本創作之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解 本創作之其他優點及功效。 The embodiments of the present invention are described below by way of specific embodiments, and those skilled in the art can easily understand the contents disclosed in the present specification. Other advantages and effects of this creation.

須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本創作可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本創作所能產生之功效及所能達成之目的下,均應仍落在本創作所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如“上”、“三”及“一”等之用語,亦僅為便於敘述之明瞭,而非用以限定本創作可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本創作可實施之範疇。 It is to be understood that the structure, the proportions, the size and the like of the drawings are only used in conjunction with the disclosure of the specification for the understanding and reading of those skilled in the art, and are not intended to limit the implementation of the present invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effectiveness and the purpose of the creation. The technical content revealed by the creation can be covered. In the meantime, the terms "upper", "three" and "one" as used in this specification are for convenience of description only, and are not intended to limit the scope of the creation of the creation, or the relative relationship may be changed or Adjustments, if there is no material change in the content of the technology, are also considered to be the scope of implementation of this creation.

以下係配合第2A至2C圖詳細說明本創作之封裝基板2之製法。 The method of manufacturing the package substrate 2 of the present invention will be described in detail below with reference to FIGS. 2A to 2C.

如第2A圖所示,提供一具有複數電性接觸墊21之基板本體20,且於該基板本體20之相對兩側上具有至少一介電層200、設於該介電層200上之線路層201、及設於該介電層200中且電性連接該線路層201與電性接觸墊21之複數導電盲孔202。 As shown in FIG. 2A, a substrate body 20 having a plurality of electrical contact pads 21 is provided, and at least one dielectric layer 200 and a circuit disposed on the dielectric layer 200 are disposed on opposite sides of the substrate body 20. The layer 201 and the plurality of conductive vias 202 disposed in the dielectric layer 200 and electrically connected to the circuit layer 201 and the electrical contact pads 21 are disposed.

於本實施例中,該基板本體20之相對兩側上的結構與製程大致相同,故以下僅以其中一側作說明。 In the present embodiment, the structures on the opposite sides of the substrate body 20 are substantially the same as the process, and therefore only one side will be described below.

接著,於該基板本體20之最外側介電層200與該些電性接觸墊21上形成一絕緣保護層22,再於該絕緣保護層22上形成複數開孔220,使得該些電性接觸墊21之部分表 面外露於該些開孔220,且單一個該電性接觸墊21係對應至少二個該開孔220。 Then, an insulating protective layer 22 is formed on the outermost dielectric layer 200 of the substrate body 20 and the electrical contact pads 21, and a plurality of openings 220 are formed on the insulating protective layer 22 to make the electrical contacts. Part of the mat 21 The surface is exposed to the openings 220, and the single electrical contact pads 21 correspond to at least two of the openings 220.

於本實施例中,該絕緣保護層22係為防焊材或介電材。 In the embodiment, the insulating protective layer 22 is a solder resist or a dielectric material.

如第2B圖所示,於該絕緣保護層22上形成阻層24,且該阻層具有對應該電性接觸墊21之開口區240,以外露該些開孔220。 As shown in FIG. 2B, a resist layer 24 is formed on the insulating protective layer 22, and the resist layer has an opening region 240 corresponding to the electrical contact pad 21, and the openings 220 are exposed.

接著,利用電鍍方式於該開口區240中形成導電凸塊23,且於各該開孔220中形成導電柱230,以令單一個該導電凸塊23藉由至少二個該導電柱230電性連接單一個該電性接觸墊21。 Then, the conductive bumps 23 are formed in the opening region 240 by electroplating, and the conductive pillars 230 are formed in each of the openings 220, so that the single conductive bumps 23 are electrically connected by at least two of the conductive pillars 230. A single one of the electrical contact pads 21 is connected.

於本實施例中,該導電凸塊23與該導電柱230係為銅材。 In the embodiment, the conductive bumps 23 and the conductive pillars 230 are made of copper.

如第2C圖所示,移除該阻層24,以完成製作該導電凸塊23之製程。 As shown in FIG. 2C, the resist layer 24 is removed to complete the process of fabricating the conductive bumps 23.

於本實施例中,如第2C’圖中,單一個該導電凸塊23藉由三個該導電柱230電性連接單一個該電性接觸墊21。然而,有關連接該電性接觸墊21之導電柱230之數量並不限於上述。 In this embodiment, as shown in FIG. 2C', a single one of the conductive bumps 23 is electrically connected to the single one of the electrical contact pads 21 by three conductive pillars 230. However, the number of the conductive posts 230 connected to the electrical contact pads 21 is not limited to the above.

本創作利用電鍍製程之特性,而於該些電性接觸墊21上形成導電柱230,以當電鍍完導電柱230時,會一併鍍出該導電凸塊23之部分中間金屬材,亦即當該導電凸塊23側邊開始形成金屬材時,該導電凸塊23中間已鍍出部分金屬材。因此,該導電凸塊23之邊緣與中間處可於預定 高度時呈齊平,故本創作導電柱230之設計可有效解決習知技術之凹陷問題。 The present invention utilizes the characteristics of the electroplating process, and the conductive pillars 230 are formed on the electrical contact pads 21, so that when the conductive pillars 230 are plated, a part of the intermediate metal materials of the conductive bumps 23 are collectively plated, that is, When the metal bump is formed on the side of the conductive bump 23, a part of the metal material is plated in the middle of the conductive bump 23. Therefore, the edge and the middle of the conductive bump 23 can be predetermined When the height is flush, the design of the conductive pillar 230 can effectively solve the problem of the recession of the prior art.

再者,藉由該導電柱230之設計,使該導電凸塊23於預定高度下(即維持預定凸塊強度),其頂面能呈現平整表面,故於後續製程中,該導電凸塊23能有效結合如晶片之電子元件或載板,而提升電性連接之品質。 Moreover, by the design of the conductive pillar 230, the conductive bump 23 can be flat at a predetermined height (ie, maintaining a predetermined bump strength), so that the conductive bump 23 can be formed in a subsequent process. It can effectively combine electronic components such as chips or carrier boards to improve the quality of electrical connections.

本創作之封裝基板2係包括:具有複數電性接觸墊21之一基板本體20、設於該基板本體20及該些電性接觸墊21上之一絕緣保護層22、以及設於對應該電性接觸墊21之絕緣保護層22上的複數導電凸塊23。 The package substrate 2 of the present invention comprises: a substrate body 20 having a plurality of electrical contact pads 21, an insulating protective layer 22 disposed on the substrate body 20 and the electrical contact pads 21, and correspondingly disposed on the substrate The plurality of conductive bumps 23 on the insulating protective layer 22 of the contact pads 21.

所述之基板本體20復具有至少一介電層200、設於該介電層200上之線路層201、及設於該介電層200中且電性連接該線路層201之複數導電盲孔202,且該電性接觸墊21與該絕緣保護層22係設於最外層之該介電層200上。 The substrate body 20 has at least one dielectric layer 200, a circuit layer 201 disposed on the dielectric layer 200, and a plurality of conductive blind vias disposed in the dielectric layer 200 and electrically connected to the circuit layer 201. 202, and the electrical contact pad 21 and the insulating protective layer 22 are disposed on the dielectric layer 200 of the outermost layer.

所述之絕緣保護層22係為防焊層,其上形成有複數開孔220,以令該些電性接觸墊21外露於該些開孔220,且單一個該電性接觸墊21係對應至少二個該開孔220。 The insulating protective layer 22 is a solder resist layer, and a plurality of openings 220 are formed thereon to expose the electrical contact pads 21 to the openings 220, and the single one of the electrical contact pads 21 corresponds to At least two of the openings 220.

所述之導電凸塊23具有位於各該開孔220中之導電柱230,以令單一個該導電凸塊23藉由至少二個該導電柱230電性連接單一個該電性接觸墊21。其中,該導電柱230係為金屬柱,例如銅柱。 The conductive bumps 23 have the conductive pillars 230 in the openings 220 such that the conductive bumps 23 are electrically connected to the single one of the electrical contact pads 21 by at least two of the conductive pillars 230. The conductive pillar 230 is a metal pillar, such as a copper pillar.

上述導電柱230的另一的形成方式,如第2B’圖之製程,可經由將導電膏填滿該開孔220,且導電膏的表面與該絕緣保護層22齊平,而形成導電凸塊23的製程與上述 製程相似,不再詳加贅述。其中,該導電膏可為銅膏、錫膏、銀膠等導電材料。 The other way of forming the conductive pillars 230, as in the process of FIG. 2B', can form the conductive bumps by filling the openings 220 with the conductive paste and the surface of the conductive paste is flush with the insulating protective layer 22. 23 process and above The process is similar and will not be described in detail. The conductive paste may be a conductive material such as a copper paste, a solder paste or a silver paste.

綜上所述,本創作之封裝基板,主要藉由該導電柱之設計,使單一個導電凸塊藉由至少二個導電柱電性連接單一個電性接觸墊,以在形成導電凸塊時,可避免在該導電凸塊之頂面上形成凹陷,故能防止該導電凸塊與電子元件發生接觸不良之問題,因而有效降低電性不良之風險,而可提升產品之可靠度。 In summary, the package substrate of the present invention is mainly designed by the conductive pillars, so that a single conductive bump is electrically connected to a single electrical contact pad by at least two conductive pillars to form a conductive bump. The formation of the recess on the top surface of the conductive bump can prevent the problem that the conductive bump and the electronic component are in poor contact, thereby effectively reducing the risk of electrical defects and improving the reliability of the product.

上述該些實施樣態僅例示性說明本創作之功效,而非用於限制本創作,任何熟習此項技藝之人士均可在不違背本創作之精神及範疇下,對上述該些實施態樣進行修飾與改變。此外,在上述該些實施態樣中之元件的數量僅為例示性說明,亦非用於限制本創作。因此本創作之權利保護範圍,應如後述之申請專利範圍所列。 The above embodiments are merely illustrative of the effects of the present invention and are not intended to limit the present invention. Any person skilled in the art can implement the above embodiments without departing from the spirit and scope of the present invention. Make modifications and changes. Moreover, the number of elements in the above-described embodiments is merely illustrative and is not intended to limit the present invention. Therefore, the scope of protection of this creation should be as listed in the scope of patent application described later.

1,2‧‧‧封裝基板 1,2‧‧‧Package substrate

10,20‧‧‧基板本體 10,20‧‧‧Substrate body

100,200‧‧‧介電層 100,200‧‧‧ dielectric layer

101,201‧‧‧線路層 101, 201‧‧‧ circuit layer

102,202‧‧‧導電盲孔 102,202‧‧‧ conductive blind holes

11,21‧‧‧電性接觸墊 11,21‧‧‧Electrical contact pads

12,22‧‧‧絕緣保護層 12,22‧‧‧Insulating protective layer

120,220‧‧‧開孔 120,220‧‧‧ openings

13,23‧‧‧導電凸塊 13,23‧‧‧Electrical bumps

130‧‧‧柱體 130‧‧‧Cylinder

230‧‧‧導電柱 230‧‧‧conductive column

24‧‧‧阻層 24‧‧‧resist

240‧‧‧開口區 240‧‧‧Open area

K‧‧‧凹陷處 K‧‧‧ recess

第1圖係顯示習知封裝基板之剖面示意圖;第2A至2C圖係為本創作封裝基板之製法之剖面示意圖;第2B’圖係說明本創作之導電柱的另一實施方式;以及第2C’圖係為本創作之電性接觸墊、導電凸塊與導電柱之立體示意圖。 1 is a schematic cross-sectional view showing a conventional package substrate; FIGS. 2A to 2C are schematic cross-sectional views showing a method of fabricating a package substrate; FIG. 2B' is a view showing another embodiment of the conductive pillar of the present invention; and 2C 'The figure is a three-dimensional schematic diagram of the electrical contact pads, conductive bumps and conductive columns of the creation.

2‧‧‧封裝基板 2‧‧‧Package substrate

20‧‧‧基板本體 20‧‧‧Substrate body

21‧‧‧電性接觸墊 21‧‧‧Electrical contact pads

22‧‧‧絕緣保護層 22‧‧‧Insulating protective layer

23‧‧‧導電凸塊 23‧‧‧Electrical bumps

230‧‧‧導電柱 230‧‧‧conductive column

Claims (6)

一種封裝基板,係包括:基板本體,係具有複數電性接觸墊;絕緣保護層,係設於該基板本體及該些電性接觸墊上,且於該絕緣保護層上形成有複數開孔,以令該些電性接觸墊外露於該些開孔,且單一個該電性接觸墊係對應至少二個該開孔;以及導電凸塊,係設於對應該電性接觸墊之絕緣保護層上,且該導電凸塊具有位於各該開孔中之導電柱,以令單一個該導電凸塊藉由至少二個該導電柱電性連接單一個該電性接觸墊。 A package substrate includes: a substrate body having a plurality of electrical contact pads; an insulating protective layer disposed on the substrate body and the electrical contact pads; and a plurality of openings are formed on the insulating protective layer to Exposing the electrical contact pads to the openings, and the one of the electrical contact pads corresponds to at least two of the openings; and the conductive bumps are disposed on the insulating protective layer corresponding to the electrical contact pads And the conductive bumps have conductive pillars in each of the openings, such that a single one of the conductive bumps is electrically connected to the single one of the electrical contact pads by at least two of the conductive pillars. 如申請專利範圍第1項所述之封裝基板,其中,該基板本體具有至少一介電層、設於該介電層上之線路層、及設於該介電層中且電性連接該線路層之複數導電盲孔。 The package substrate of claim 1, wherein the substrate body has at least one dielectric layer, a circuit layer disposed on the dielectric layer, and is disposed in the dielectric layer and electrically connected to the circuit A plurality of conductive blind holes of the layer. 如申請專利範圍第2項所述之封裝基板,其中,該電性接觸墊與該絕緣保護層係設於最外層之該介電層上。 The package substrate of claim 2, wherein the electrical contact pad and the insulating protective layer are disposed on the dielectric layer of the outermost layer. 如申請專利範圍第1項或第3項所述之封裝基板,其中,該絕緣保護層係為防焊材料或介電材料。 The package substrate of claim 1 or 3, wherein the insulating protective layer is a solder resist material or a dielectric material. 如申請專利範圍第1項所述之封裝基板,其中,該導電柱係為金屬柱。 The package substrate of claim 1, wherein the conductive pillar is a metal pillar. 如申請專利範圍第5項所述之封裝基板,其中,該金屬柱係為銅柱。 The package substrate of claim 5, wherein the metal pillar is a copper pillar.
TW101211202U 2012-06-08 2012-06-08 Package substrate TWM462947U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI710085B (en) * 2015-11-16 2020-11-11 台灣積體電路製造股份有限公司 Semiconductor structure and manufacturing method thereof
TWI762777B (en) * 2019-03-27 2022-05-01 恆勁科技股份有限公司 Semiconductor package substrate and manufacturing method thereof and electronic package and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI710085B (en) * 2015-11-16 2020-11-11 台灣積體電路製造股份有限公司 Semiconductor structure and manufacturing method thereof
TWI762777B (en) * 2019-03-27 2022-05-01 恆勁科技股份有限公司 Semiconductor package substrate and manufacturing method thereof and electronic package and manufacturing method thereof

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