TWM462949U - Package substrate - Google Patents

Package substrate Download PDF

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Publication number
TWM462949U
TWM462949U TW102209126U TW102209126U TWM462949U TW M462949 U TWM462949 U TW M462949U TW 102209126 U TW102209126 U TW 102209126U TW 102209126 U TW102209126 U TW 102209126U TW M462949 U TWM462949 U TW M462949U
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Taiwan
Prior art keywords
conductive
electrical contact
layer
width
dielectric layer
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TW102209126U
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Chinese (zh)
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Chun-Ting Lin
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Unimicron Technology Corp
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Priority to TW102209126U priority Critical patent/TWM462949U/en
Publication of TWM462949U publication Critical patent/TWM462949U/en

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Abstract

Disclosed is a package substrate, including a board body having a dielectric layer, a plurality of conductive blind vias formed in the dielectric layer, a plurality of electrical contact pads formed on an end surface of the conductive blind vias, an insulating protective layer formed on the dielectric layer and exposing the conductive blind vias and electrical contact pads therefrom, and a conductive tower disposed on the exposed end surface of the conductive blind vias while enclosing the electrical contact pads, wherein the width of the end surface of electrical contact pads is smaller than the width of the end surface of conductive blind vias, thereby increasing the distance between each of the electrical contact pads to thus increase the layout space.

Description

封裝基板Package substrate

  本創作係有關一種封裝基板,尤指一種能提升可靠度之封裝基板。The present invention relates to a package substrate, and more particularly to a package substrate capable of improving reliability.

  隨著電子產業的發達,現今的電子產品已趨向輕薄短小與功能多樣化的方向設計,半導體封裝技術亦隨之開發出不同的封裝型態。而針對不同之封裝結構,亦發展出各種封裝用之封裝基板。一般覆晶式封裝基板,其基板本體表面具有置晶區,於該置晶區中形成複數電性接觸墊,且於該基板本體上形成防焊層,該防焊層具有複數開孔以對應顯露該電性接觸墊。於置晶製程中,於該置晶區上接置半導體晶片,且該半導體晶片以覆晶方式電性連接該電性接觸墊。With the development of the electronics industry, today's electronic products have been designed in a light, short, and versatile manner, and semiconductor packaging technologies have also developed different packaging types. For various package structures, package substrates for various packages have also been developed. Generally, a flip-chip package substrate has a crystallizing region on a surface of the substrate body, a plurality of electrical contact pads are formed in the crystallographic region, and a solder resist layer is formed on the substrate body, the solder resist layer having a plurality of openings to correspond to The electrical contact pad is exposed. In the crystallizing process, a semiconductor wafer is mounted on the seeding region, and the semiconductor wafer is electrically connected to the electrical contact pad in a flip chip manner.

  第1A至1D圖係為習知封裝基板1之製法的剖視示意圖。1A to 1D are schematic cross-sectional views showing a method of manufacturing the conventional package substrate 1.

  如第1A圖所示,提供一板體10,該板體10具有至少一內部線路11與至少一介電層12,且於該介電層12上形成複數盲孔120,使該內部線路11之部分表面外露於該盲孔120。As shown in FIG. 1A, a board body 10 is provided. The board body 10 has at least one internal line 11 and at least one dielectric layer 12, and a plurality of blind holes 120 are formed on the dielectric layer 12 to make the internal line 11 A portion of the surface is exposed to the blind hole 120.

  如第1B圖所示,於該介電層12上與該盲孔120中形成一導電層13,再於該導電層13上形成阻層14,且該阻層14形成有複數開口區140,令該介電層12上之部分導電層13及該盲孔120外露於該些開口區140。As shown in FIG. 1B, a conductive layer 13 is formed on the dielectric layer 12 and the blind via 120, and a resist layer 14 is formed on the conductive layer 13, and the resist layer 14 is formed with a plurality of open regions 140. A portion of the conductive layer 13 on the dielectric layer 12 and the blind via 120 are exposed to the open regions 140.

  接著,於該開口區140中電鍍形成一線路層15與導電盲孔16。其中,該導電盲孔16係形成於該盲孔120中以電性連接該內部線路11。Then, a circuit layer 15 and a conductive via hole 16 are plated in the opening region 140. The conductive via 16 is formed in the blind via 120 to electrically connect the internal line 11 .

  再者,該線路層15係形成於該介電層12上,且該線路層15具有複數導電跡線15a,該導電跡線15a之端處係具有圓形電性接觸墊150(如第1C’圖所示),而該電性接觸墊150係形成於該導電盲孔16之端面16a上,使該導電盲孔16電性連接該線路層15。Furthermore, the circuit layer 15 is formed on the dielectric layer 12, and the circuit layer 15 has a plurality of conductive traces 15a having a circular electrical contact pad 150 at the end of the conductive trace 15a (eg, 1C). The electrical contact pad 150 is formed on the end surface 16a of the conductive via hole 16 to electrically connect the conductive via hole 16 to the circuit layer 15.

  如第1C及1C’圖所示,移除該阻層14及其下之導電層13。接著,於該介電層12、線路層15上形成一防焊層17,且該防焊層17具有複數開孔170,以令該些電性接觸墊150對應外露於該些開孔170,其中,該開孔170係為圓孔。The resist layer 14 and the underlying conductive layer 13 are removed as shown in Figs. 1C and 1C'. Then, a solder resist layer 17 is formed on the dielectric layer 12 and the circuit layer 15 , and the solder resist layer 17 has a plurality of openings 170 to expose the electrical contact pads 150 to the openings 170 . The opening 170 is a circular hole.

  如第1D圖所示,於該開孔170中形成焊錫材料,以回焊成導電凸塊19。As shown in FIG. 1D, a solder material is formed in the opening 170 to be reflowed into the conductive bumps 19.

  惟,習知封裝基板1中,因該電性接觸墊150形成有一翼部結構150a,故該電性接觸墊150係覆蓋整個該導電盲孔16之端面16a,且該電性接觸墊150之直徑亦大於該開孔170之直徑,以致於各該電性接觸墊150之間的佈線空間縮小,不僅無法提升佈線密度,且各該導電凸塊19之間需保持一定距離以避免橋接,因而無法縮小各該導電凸塊19之間的距離,進而無法滿足細間距、多接點之需求。However, in the conventional package substrate 1 , since the electrical contact pad 150 is formed with a wing structure 150 a , the electrical contact pad 150 covers the entire end surface 16 a of the conductive blind hole 16 , and the electrical contact pad 150 The diameter of the opening 170 is also larger than the diameter of the opening 170, so that the wiring space between the electrical contact pads 150 is reduced, and the wiring density is not increased, and the conductive bumps 19 need to be kept at a certain distance to avoid bridging. The distance between the conductive bumps 19 cannot be reduced, and thus the requirements of fine pitch and multiple contacts cannot be satisfied.

  因此,如何克服上述習知技術之種種問題,實已成為目前業界亟待克服之難題。Therefore, how to overcome the various problems of the above-mentioned prior art has become a difficult problem to be overcome in the industry.

  鑑於上述習知技術之種種缺失,本創作係提供一種封裝基板,係包括:板體,係具有至少一介電層,且該介電層具有複數盲孔;複數導電盲孔,係分別設於該介電層之盲孔中,且該導電盲孔之端面之高度低於該介電層之表面高度;複數電性接觸墊,係分別設於該導電盲孔之端面上,且該電性接觸墊之端面寬度小於該導電盲孔之端面之寬度;以及絕緣保護層,係設於該介電層上,且該絕緣保護層具有複數開孔,以令該導電盲孔之端面及電性接觸墊外露於該開孔,又該絕緣保護層之開孔之直徑小於該導電盲孔之端面之寬度;以及複數導電塔,係分別設於該開孔中所外露之導電盲孔之端面上並包覆該電性接觸墊,該導電塔具有相對之底部與端部,該底部包覆該電性接觸墊,又該底部之寬度係大於該端部之寬度。In view of the above-mentioned various deficiencies of the prior art, the present invention provides a package substrate, comprising: a plate body having at least one dielectric layer, wherein the dielectric layer has a plurality of blind holes; and the plurality of conductive blind holes are respectively disposed on In the blind hole of the dielectric layer, the height of the end face of the conductive blind hole is lower than the surface height of the dielectric layer; the plurality of electrical contact pads are respectively disposed on the end faces of the conductive blind hole, and the electrical property The width of the end surface of the contact pad is smaller than the width of the end surface of the conductive blind hole; and the insulating protective layer is disposed on the dielectric layer, and the insulating protective layer has a plurality of openings to make the end face and the electrical conductivity of the conductive blind hole The contact pad is exposed to the opening, and the diameter of the opening of the insulating protective layer is smaller than the width of the end surface of the conductive blind hole; and the plurality of conductive towers are respectively disposed on the end faces of the conductive blind holes exposed in the opening And covering the electrical contact pad, the conductive tower has opposite bottom and end portions, the bottom covering the electrical contact pad, and the width of the bottom portion is greater than the width of the end portion.

  前述之封裝基板中,該板體復具有形成於該介電層上之線路層。該線路層具有複數導電跡線,且該電性接觸墊係電性連接該導電跡線之端處。In the above package substrate, the board body has a circuit layer formed on the dielectric layer. The circuit layer has a plurality of conductive traces, and the electrical contact pads are electrically connected to the ends of the conductive traces.

  前述之封裝基板中,該電性接觸墊之端面長度係大於該電性接觸墊之端面寬度。In the above package substrate, the length of the end surface of the electrical contact pad is greater than the width of the end surface of the electrical contact pad.

  由上可知,本創作之封裝基板,係藉由該電性接觸墊之端面寬度係小於該導電盲孔之端面之寬度,且該電性接觸墊之端面長度係大於該電性接觸墊之端面寬度,使該電性接觸墊於單一軸向上不會形成翼部結構,因而能增加各該電性接觸墊之間的距離,以增加佈線空間,進而能提高佈線密度。It can be seen that the package substrate of the present invention has a width of an end surface of the electrical contact pad that is smaller than a width of an end surface of the conductive via hole, and an end surface length of the electrical contact pad is greater than an end surface of the electrical contact pad. The width is such that the electrical contact pad does not form a wing structure in a single axial direction, thereby increasing the distance between each of the electrical contact pads to increase the wiring space, thereby increasing the wiring density.

1,2,2’‧‧‧封裝基板1,2,2'‧‧‧Package substrate

10,20‧‧‧板體10,20‧‧‧ board

11,21‧‧‧內部線路11, 21‧‧‧ internal lines

12,22‧‧‧介電層12,22‧‧‧ dielectric layer

120,220‧‧‧盲孔120,220‧‧‧blind holes

13,23a,23b‧‧‧導電層13,23a, 23b‧‧‧ conductive layer

14‧‧‧阻層14‧‧‧Resist layer

140‧‧‧開口區140‧‧‧Open area

15,25‧‧‧線路層15,25‧‧‧ circuit layer

15a,25a‧‧‧導電跡線15a, 25a‧‧‧ conductive traces

150,250‧‧‧電性接觸墊150,250‧‧‧Electrical contact pads

150a‧‧‧翼部結構150a‧‧‧wing structure

16,26‧‧‧導電盲孔16,26‧‧‧conductive blind holes

16a,26a‧‧‧端面16a, 26a‧‧‧ end face

17‧‧‧防焊層17‧‧‧ solder mask

170,270‧‧‧開孔170,270‧‧‧ openings

19‧‧‧導電凸塊19‧‧‧Electrical bumps

22a‧‧‧表面22a‧‧‧ surface

24a‧‧‧第一阻層24a‧‧‧First resistance layer

240a‧‧‧第一開口區240a‧‧‧First opening area

24b‧‧‧第二阻層24b‧‧‧second barrier layer

240b‧‧‧第二開口區240b‧‧‧Second opening area

27‧‧‧絕緣保護層27‧‧‧Insulation protective layer

28‧‧‧金屬層28‧‧‧metal layer

29,29’‧‧‧導電塔29,29’‧‧‧Conducting Tower

29a‧‧‧底部29a‧‧‧ bottom

29b‧‧‧端部29b‧‧‧End

290‧‧‧塔柱290‧‧ ‧ tower

291‧‧‧焊錫材料291‧‧‧ solder materials

t,h‧‧‧高度t, h‧‧‧ height

d,w,s‧‧‧寬度d, w, s‧‧‧ width

r‧‧‧直徑R‧‧‧diameter

X‧‧‧端面寬度X‧‧‧ face width

Y‧‧‧端面長度Y‧‧‧ end length

P‧‧‧距離P‧‧‧ distance

  第1A至1D圖係為習知封裝基板之製法的剖視示意圖;其中,第1C’圖係為第1C圖之局部上視圖;1A to 1D are schematic cross-sectional views showing a method of fabricating a conventional package substrate; wherein the 1st C' is a partial top view of FIG. 1C;

  第2A至2G圖係為本創作封裝基板之製法的剖視示意圖;其中,第2C’及2G’圖係為第2C及2G圖之局部上視圖;以及2A to 2G are schematic cross-sectional views showing a method of fabricating a package substrate; wherein the 2C' and 2G' diagrams are partial top views of the 2C and 2G diagrams;

  第2H圖係為第2G圖之另一實施例。The 2Hth diagram is another embodiment of the 2Gth diagram.

  以下藉由特定的具體實施例說明本創作之實施方式,熟悉此技藝之人士可由本說明書所揭示之內容輕易地瞭解本創作之其他優點及功效。The embodiments of the present invention are described below by way of specific embodiments, and those skilled in the art can readily appreciate other advantages and functions of the present invention from the disclosure of the present disclosure.

  須知,本說明書所附圖式所繪示之結構、比例、大小等,均僅用以配合說明書所揭示之內容,以供熟悉此技藝之人士之瞭解與閱讀,並非用以限定本創作可實施之限定條件,故不具技術上之實質意義,任何結構之修飾、比例關係之改變或大小之調整,在不影響本創作所能產生之功效及所能達成之目的下,均應仍落在本創作所揭示之技術內容得能涵蓋之範圍內。同時,本說明書中所引用之如“上”、“下”、“第一”、“第二”、及“一”等之用語,亦僅為便於敘述之明瞭,而非用以限定本創作可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本創作可實施之範疇。It is to be understood that the structure, the proportions, the size and the like of the drawings are only used in conjunction with the disclosure of the specification for the understanding and reading of those skilled in the art, and are not intended to limit the implementation of the present invention. The conditions are limited, so it is not technically meaningful. Any modification of the structure, change of the proportional relationship or adjustment of the size should remain in this book without affecting the effectiveness and the purpose of the creation. The technical content revealed by the creation can be covered. In the meantime, the terms "upper", "lower", "first", "second", and "one" as used in this specification are for convenience only, and are not intended to limit the creation. The scope of the implementation, the change or adjustment of its relative relationship, is also considered to be within the scope of the creation of the creation of the product without substantial change.

  第2A至2G圖係為本創作封裝基板2之製法的剖視示意圖。2A to 2G are schematic cross-sectional views showing the method of manufacturing the package substrate 2.

  如第2A圖所示,提供一板體20,該板體20具有至少一內部線路21與至少一介電層22,且於該介電層22上形成複數盲孔220,使該內部線路21之部分表面外露於該盲孔220。As shown in FIG. 2A, a board body 20 is provided. The board body 20 has at least one internal line 21 and at least one dielectric layer 22, and a plurality of blind holes 220 are formed on the dielectric layer 22 to make the internal line 21 A portion of the surface is exposed to the blind hole 220.

  於本實施例中,係為該板體20最外側之製作技術,故僅繪示最外側之介電層22。因此,該板體20之整體結構不以圖式為限,其可具有多層介電層與多層內部線路,或僅具有一層介電層與一層內部線路。In the present embodiment, the outermost layer of the plate body 20 is fabricated, so only the outermost dielectric layer 22 is shown. Therefore, the overall structure of the board 20 is not limited to the drawings, and may have a plurality of dielectric layers and a plurality of internal lines, or only one dielectric layer and one internal line.

  如第2B圖所示,於該介電層22之表面22a上與該盲孔220中形成一導電層23a,再於該導電層23a與盲孔220上形成第一阻層24a,且該第一阻層24a形成有複數第一開口區240a,令該介電層22之表面22a上之部分導電層23a及該盲孔220之部分區域外露於該些第一開口區240a,又該第一阻層24a延伸至該盲孔220之部分空間中。As shown in FIG. 2B, a conductive layer 23a is formed on the surface 22a of the dielectric layer 22 and the blind via 220, and a first resist layer 24a is formed on the conductive layer 23a and the blind via 220. a first resistive layer 24a is formed with a plurality of first open regions 240a, such that a portion of the conductive layer 23a on the surface 22a of the dielectric layer 22 and a portion of the blind via 220 are exposed to the first open regions 240a. The resist layer 24a extends into a portion of the space of the blind via 220.

  接著,於該第一開口區240a中電鍍形成一線路層25與複數導電盲孔26。Then, a circuit layer 25 and a plurality of conductive blind vias 26 are plated in the first opening region 240a.

  於本實施例中,該導電盲孔26係形成於該盲孔220中以電性連接該內部線路21。In the embodiment, the conductive blind hole 26 is formed in the blind hole 220 to electrically connect the internal line 21 .

  再者,該線路層25係形成於該介電層22之表面22a上,且該線路層25具有複數導電跡線25a與複數電性接觸墊250,該導電跡線25a之端處係電性連接該電性接觸墊250,如第2C’圖所示,而該複數電性接觸墊250係分別形成於該導電盲孔26之端面26a上,使該導電盲孔26電性連接該線路層25。Moreover, the circuit layer 25 is formed on the surface 22a of the dielectric layer 22, and the circuit layer 25 has a plurality of conductive traces 25a and a plurality of electrical contact pads 250, and the ends of the conductive traces 25a are electrically connected. The electrical contact pads 250 are connected to the end faces 26a of the conductive blind vias 26, and the conductive vias 26 are electrically connected to the circuit layer. 25.

  如第2C圖所示,移除該第一阻層24a及其下之導電層23a。As shown in FIG. 2C, the first resist layer 24a and the underlying conductive layer 23a are removed.

  於本實施例中,因該第一阻層24a延伸至該盲孔220之部分空間中,致使電鍍該導電盲孔26後,該導電盲孔26之端面26a之高度h低於該介電層22之表面22a之高度t。藉此,使該導電盲孔26之材質不會延伸至該介電層22之表面22a上,故能降低金屬材(如銅)之樹枝狀電性橋接(dendrite)之問題。In this embodiment, since the first resist layer 24a extends into a portion of the space of the blind via 220, the height h of the end face 26a of the conductive via 26 is lower than the dielectric layer after the conductive via 26 is plated. The height t of the surface 22a of 22. Thereby, the material of the conductive blind via 26 does not extend to the surface 22a of the dielectric layer 22, so that the problem of dendritic electrical bridging of the metal material (such as copper) can be reduced.

  再者,該電性接觸墊250之端面寬度X係小於該導電盲孔26之端面26a之寬度d,且該電性接觸墊250之端面長度Y係大於該電性接觸墊250之端面寬度X,使該電性接觸墊250之端面成為具圓角之長方形,如第2C’圖所示。因此,該電性接觸墊250於單一軸向(即端面寬度X之方向)上不會形成翼部結構,因而可增加各該電性接觸墊250之間的距離,以增加佈線空間,而能滿足細間距、多接點之需求。Moreover, the end face width X of the electrical contact pad 250 is smaller than the width d of the end face 26a of the conductive blind hole 26, and the end face length Y of the electrical contact pad 250 is greater than the end face width X of the electrical contact pad 250. The end surface of the electrical contact pad 250 is formed into a rectangular shape with rounded corners, as shown in FIG. 2C'. Therefore, the electrical contact pad 250 does not form a wing structure in a single axial direction (ie, the direction of the end face width X), so that the distance between each of the electrical contact pads 250 can be increased to increase the wiring space, and Meet the needs of fine pitch and multiple contacts.

  如第2D圖所示,於該介電層22、線路層25與導電盲孔26上形成一絕緣保護層27,且該絕緣保護層27具有複數開孔270,以令該些導電盲孔26之部分表面與電性接觸墊250對應外露於該些開孔270。As shown in FIG. 2D, an insulating protective layer 27 is formed on the dielectric layer 22, the circuit layer 25 and the conductive via hole 26, and the insulating protective layer 27 has a plurality of openings 270 for the conductive vias 26 to be formed. A portion of the surface is exposed to the openings 270 corresponding to the electrical contact pads 250.

  於本實施例中,該開孔270係為圓孔,且該開孔270之直徑r係小於該導電盲孔26之端面26a之寬度d並大於該電性接觸墊250之端面寬度X,使該絕緣保護層27與該電性接觸墊250之間形成於單一軸向上非防焊層定義(non solder mask define,NSMD)之設計。In the embodiment, the opening 270 is a circular hole, and the diameter r of the opening 270 is smaller than the width d of the end surface 26a of the conductive blind hole 26 and larger than the width X of the end surface of the electrical contact pad 250, so that The insulating protective layer 27 and the electrical contact pad 250 are formed in a single axial non-solder mask define (NSMD) design.

  如第2E圖所示,於該絕緣保護層27、導電盲孔26之部分表面與該些電性接觸墊250上形成一導電層23b,以電鍍形成一金屬層28。As shown in FIG. 2E, a conductive layer 23b is formed on a portion of the surface of the insulating protective layer 27 and the conductive via 26 and the conductive contact pads 250 to form a metal layer 28.

  接著,於該金屬層28上形成第二阻層24b,且該第二阻層24b形成有外露部分該金屬層28之複數第二開口區240b,使該第二阻層24b係對應覆蓋該導電盲孔26上之金屬層28。Then, a second resistive layer 24b is formed on the metal layer 28, and the second resistive layer 24b is formed with a plurality of second open regions 240b of the exposed metal layer 28, so that the second resistive layer 24b correspondingly covers the conductive layer. Metal layer 28 on blind hole 26.

  如第2F圖所示,以蝕刻方式移除該第二開口區240b中之金屬層28,令保留之金屬層28作為導電塔29。As shown in FIG. 2F, the metal layer 28 in the second open region 240b is removed by etching, and the remaining metal layer 28 is used as the conductive tower 29.

  於本實施例中,該導電塔29係為設於該絕緣保護層27之開孔270所外露之該導電盲孔26之部分端面26a上並包覆該電性接觸墊250,且該導電塔29具有相對之底部29a與端部29b,該底部29a包覆該電性接觸墊250。In this embodiment, the conductive tower 29 is disposed on a portion of the end surface 26a of the conductive blind hole 26 exposed by the opening 270 of the insulating protective layer 27 and covers the electrical contact pad 250, and the conductive tower is 29 has an opposite bottom portion 29a and an end portion 29b that encases the electrical contact pad 250.

  再者,藉由該開孔270之直徑r小於該導電盲孔26之端面26a之寬度d,以增加該導電跡線25a與該導電塔29之距離P,故能避免金屬材(如銅)之樹枝狀電性橋接(dendrite)之問題。Moreover, the diameter r of the opening 270 is smaller than the width d of the end surface 26a of the conductive blind hole 26 to increase the distance P between the conductive trace 25a and the conductive tower 29, so that metal material (such as copper) can be avoided. The problem of dendritic electrical bridges (dendrite).

  如第2G圖所示,移除該第二阻層24b及其下之導電層23b,以露出該導電塔29之端部29b,以供結合半導體晶片(圖略)。As shown in FIG. 2G, the second resist layer 24b and the underlying conductive layer 23b are removed to expose the end portion 29b of the conductive tower 29 for bonding the semiconductor wafer (not shown).

  於本實施例中,係利用蝕刻金屬層之特性,使該底部29a之寬度w大於該端部29b之寬度s,因而該端部29b不會形成翼部結構於該絕緣保護層27上,故可增加各該導電塔29之間的距離,如第2G’圖所示,以滿足細間距、多接點之需求。In this embodiment, the width of the bottom portion 29a is greater than the width s of the end portion 29b by utilizing the characteristics of the etched metal layer, so that the end portion 29b does not form a wing structure on the insulating protective layer 27. The distance between each of the conductive towers 29 can be increased, as shown in Fig. 2G' to meet the requirements of fine pitch and multiple contacts.

  再者,因該導電塔29不會形成翼部結構,故於進行溫度循環測試(TCT)時,該絕緣保護層27上並無金屬材,因而能避免熱應力不均所引發之碎裂(Crack)現象。因此,不僅能提升本創作之封裝基板2之可靠度,且使該封裝基板2的測試成功。Furthermore, since the conductive tower 29 does not form a wing structure, when the temperature cycle test (TCT) is performed, the insulating protective layer 27 has no metal material, so that the crack caused by the uneven thermal stress can be avoided ( Crack) phenomenon. Therefore, not only the reliability of the package substrate 2 of the present invention can be improved, but also the test of the package substrate 2 is successful.

  於另一實施例中,如第2H圖所示,於後續製程中,係以焊錫材料291包覆如上述導電塔29結構之塔柱290,使該導電塔29’係由該塔柱290與焊錫材料291所構成。具體地,該焊錫材料291係藉由印刷技術(SOP)、電鍍技術、化學鍍技術、噴錫技術或乾膜印刷等方式形成。因此,相較於習知純焊錫材料構成之錫球,該焊錫材料291包覆該塔柱290所構成之接點結構,可降低接點結構之電阻值。In another embodiment, as shown in FIG. 2H, in a subsequent process, the pillar 290 of the structure of the conductive tower 29 is coated with a solder material 291, so that the conductive tower 29' is connected to the tower 290. The solder material 291 is composed of. Specifically, the solder material 291 is formed by a printing technique (SOP), an electroplating technique, an electroless plating technique, a tin-spraying technique, or a dry film printing. Therefore, compared with the solder ball composed of the conventional pure solder material, the solder material 291 covers the contact structure formed by the column 290, and the resistance value of the contact structure can be reduced.

  又,該導電塔29(或塔柱290)係為上窄下寬之結構,致使該開孔270之直徑r能與該導電塔29(或塔柱290)之最大直徑相同(即該底部29a之寬度w),故能增強該導電塔29(或塔柱290)之可靠度,以致於當該焊錫材料291與該導電塔29(或塔柱290)所構成之接點結構進行推拉球測試時,能避免掉球問題。Moreover, the conductive tower 29 (or the column 290) is of a structure that is narrow and wide, such that the diameter r of the opening 270 can be the same as the maximum diameter of the conductive tower 29 (or the column 290) (ie, the bottom 29a) The width w) can enhance the reliability of the conductive tower 29 (or the column 290), so that the contact structure formed by the solder material 291 and the conductive tower 29 (or the tower 290) is subjected to a push-pull ball test. When you can avoid the ball drop problem.

  另外,該導電塔29(或塔柱290)之上窄下寬結構具有較多之表面積,故能增加該導電塔29(或塔柱290)與該焊錫材料291之接著面積,因而能增加該導電塔29(或塔柱290)與該焊錫材料291間之結合力。In addition, the narrow and wide structure above the conductive tower 29 (or the column 290) has a larger surface area, so that the area of the conductive tower 29 (or the column 290) and the solder material 291 can be increased, thereby increasing the The bonding force between the conductive tower 29 (or the column 290) and the solder material 291.

  如第2G及2H圖所示,本創作提供一種封裝基板2,2’,係包括:一板體20、複數導電盲孔26、複數電性接觸墊250、一絕緣保護層27以及複數導電塔29,29’。As shown in Figures 2G and 2H, the present invention provides a package substrate 2, 2' comprising: a plate body 20, a plurality of conductive blind holes 26, a plurality of electrical contact pads 250, an insulating protective layer 27, and a plurality of conductive towers. 29,29'.

  所述之板體20係具有至少一介電層22,且該介電層22具有複數盲孔220。The plate body 20 has at least one dielectric layer 22, and the dielectric layer 22 has a plurality of blind holes 220.

  所述之導電盲孔26係形成於該介電層22之盲孔220中,且該導電盲孔26之端面26a之高度h低於該介電層22之表面22a高度t。The conductive blind vias 26 are formed in the blind vias 220 of the dielectric layer 22, and the height h of the end faces 26a of the conductive vias 26 is lower than the height t of the surface 22a of the dielectric layer 22.

  所述之電性接觸墊250係形成於該導電盲孔26之部分端面26a上,且該電性接觸墊250之端面寬度X係小於該導電盲孔26之端面26a之寬度d。The electrical contact pad 250 is formed on a portion of the end surface 26a of the conductive via hole 26, and the end surface width X of the electrical contact pad 250 is smaller than the width d of the end surface 26a of the conductive via hole 26.

  所述之絕緣保護層27係形成於該介電層22上,且該絕緣保護層27具有複數開孔270,以令該導電盲孔26之部分端面26a及電性接觸墊250外露於該開孔270,又該絕緣保護層之開孔之直徑r小於該導電盲孔之端面之寬度d。The insulating protective layer 27 is formed on the dielectric layer 22, and the insulating protective layer 27 has a plurality of openings 270 for exposing a portion of the end surface 26a of the conductive blind via 26 and the electrical contact pad 250 to the opening. The hole 270, and the diameter r of the opening of the insulating protective layer is smaller than the width d of the end surface of the conductive blind hole.

  所述之導電塔29,29’係分別設於該開孔270中所外露之該導電盲孔26之端面26a上並包覆該電性接觸墊250,該導電塔29(或另一態樣之導電塔29’之塔柱290)具有相對之底部29a與端部29b,該底部29a包覆該電性接觸墊250,又該底部29a之寬度w係大於該端部29b之寬度s。The conductive towers 29, 29' are respectively disposed on the end faces 26a of the conductive blind holes 26 exposed in the opening 270 and cover the electrical contact pads 250, and the conductive towers 29 (or another aspect) The tower 290) of the conductive tower 29' has an opposite bottom portion 29a and an end portion 29b. The bottom portion 29a covers the electrical contact pad 250, and the width 29 of the bottom portion 29a is greater than the width s of the end portion 29b.

  於一實施例中,該板體20復具有形成於該介電層22上之線路層25,且該線路層25具有複數導電跡線25a,且該電性接觸墊250係電性連接該導電跡線25a之端處。In one embodiment, the board body 20 has a circuit layer 25 formed on the dielectric layer 22, and the circuit layer 25 has a plurality of conductive traces 25a, and the electrical contact pads 250 are electrically connected to the conductive layer. At the end of trace 25a.

  於一實施例中,該電性接觸墊250之端面長度Y係大於該電性接觸墊250之端面寬度X,例如,該電性接觸墊之端面成為橢圓形、長方形、具圓角之長方形(如第2C’圖所示)或操場形等。In one embodiment, the length Y of the end surface of the electrical contact pad 250 is greater than the width X of the end surface of the electrical contact pad 250. For example, the end surface of the electrical contact pad has an elliptical shape, a rectangular shape, and a rectangular shape with rounded corners ( As shown in Figure 2C') or playground shape.

  綜上所述,本創作之封裝基板,主要藉由該電性接觸墊之端面寬度係小於該導電盲孔之端面之寬度,且該電性接觸墊之端面長度係大於該電性接觸墊之端面寬度,使該電性接觸墊於單一軸向上不會形成翼部結構,因而能增加各該電性接觸墊之間的距離,以增加佈線空間,進而能提高佈線密度。In summary, the package substrate of the present invention is mainly characterized in that the width of the end surface of the electrical contact pad is smaller than the width of the end surface of the conductive blind hole, and the length of the end surface of the electrical contact pad is greater than that of the electrical contact pad. The width of the end face is such that the electrical contact pad does not form a wing structure in a single axial direction, thereby increasing the distance between each of the electrical contact pads to increase the wiring space, thereby increasing the wiring density.

  再者,藉由該導電盲孔之端面之高度低於該介電層之表面之高度、及增加該導電跡線與該導電塔之距離,以克服檢測時金屬材(如銅)之樹枝狀電性橋接之問題,俾能提升可靠度。Furthermore, the height of the end face of the conductive blind via is lower than the height of the surface of the dielectric layer, and the distance between the conductive trace and the conductive tower is increased to overcome the dendriticity of the metal material (such as copper) during the detection. The problem of electrical bridging can improve reliability.

  上述實施例係用以例示性說明本創作之原理及其功效,而非用於限制本創作。任何熟習此項技藝之人士均可在不違背本創作之精神及範疇下,對上述實施例進行修改。因此本創作之權利保護範圍,應如後述之申請專利範圍所列。The above embodiments are intended to illustrate the principles of the present invention and its effects, and are not intended to limit the present invention. Anyone who is familiar with the art may modify the above embodiments without departing from the spirit and scope of the creation. Therefore, the scope of protection of this creation should be as listed in the scope of patent application described later.

2‧‧‧封裝基板 2‧‧‧Package substrate

20‧‧‧板體 20‧‧‧ board

21‧‧‧內部線路 21‧‧‧Internal lines

22‧‧‧介電層 22‧‧‧Dielectric layer

25‧‧‧線路層 25‧‧‧Line layer

25a‧‧‧導電跡線 25a‧‧‧conductive traces

250‧‧‧電性接觸墊 250‧‧‧Electrical contact pads

26‧‧‧導電盲孔 26‧‧‧ Conductive blind holes

26a‧‧‧端面 26a‧‧‧ end face

27‧‧‧絕緣保護層 27‧‧‧Insulation protective layer

270‧‧‧開孔 270‧‧‧ openings

29‧‧‧導電塔 29‧‧‧Conducting tower

29a‧‧‧底部 29a‧‧‧ bottom

29b‧‧‧端部 29b‧‧‧End

t,h‧‧‧高度 t, h‧‧‧ height

d,w,s‧‧‧寬度 d, w, s‧‧‧ width

r‧‧‧直徑 R‧‧‧diameter

Claims (4)

一種 封裝基板,係包括:
  板體,係具有至少一介電層,且該介電層具有複數盲孔;
  複數導電盲孔,係分別設於該介電層之盲孔中,且該導電盲孔之端面之高度低於該介電層之表面高度;
  複數電性接觸墊,係分別設於該導電盲孔之端面上,且該電性接觸墊之端面寬度小於該導電盲孔之端面之寬度;以及
  絕緣保護層,係設於該介電層上,且該絕緣保護層具有複數開孔,以令該導電盲孔之端面及電性接觸墊外露於該開孔,又該絕緣保護層之開孔之直徑小於該導電盲孔之端面之寬度;以及
  複數導電塔,係分別設於該開孔中所外露之導電盲孔之端面上並包覆該電性接觸墊,該導電塔具有相對之底部與端部,該底部包覆該電性接觸墊,又該底部之寬度係大於該端部之寬度。
A package substrate includes:
The plate body has at least one dielectric layer, and the dielectric layer has a plurality of blind holes;
The plurality of conductive blind vias are respectively disposed in the blind vias of the dielectric layer, and the height of the end faces of the conductive vias is lower than the surface height of the dielectric layer;
a plurality of electrical contact pads are respectively disposed on the end faces of the conductive via holes, and an end face width of the electrical contact pads is smaller than a width of an end face of the conductive via holes; and an insulating protective layer is disposed on the dielectric layer And the insulating protective layer has a plurality of openings, so that the end surface of the conductive blind hole and the electrical contact pad are exposed to the opening, and the diameter of the opening of the insulating protective layer is smaller than the width of the end surface of the conductive blind hole; And a plurality of conductive towers respectively disposed on the end faces of the conductive blind holes exposed in the openings and covering the electrical contact pads, the conductive towers having opposite bottom and ends, the bottom covering the electrical contacts The pad, in turn, has a width greater than the width of the end.
如 申請專利範圍第1項所述之封裝基板,其中,該板體復具有形成於該介電層上之線路層。The package substrate of claim 1, wherein the plate body has a circuit layer formed on the dielectric layer. 如 申請專利範圍第2項所述之封裝基板,其中,該線路層具有複數導電跡線,且該電性接觸墊係電性連接該導電跡線之端處。The package substrate of claim 2, wherein the circuit layer has a plurality of conductive traces, and the electrical contact pads are electrically connected to the ends of the conductive traces. 如 申請專利範圍第1項所述之封裝基板,其中,該電性接觸墊之端面長度係大於該電性接觸墊之端面寬度。The package substrate of claim 1, wherein the length of the end face of the electrical contact pad is greater than the width of the end face of the electrical contact pad.
TW102209126U 2013-05-16 2013-05-16 Package substrate TWM462949U (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9418928B2 (en) 2014-01-06 2016-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Protrusion bump pads for bond-on-trace processing
TWI555154B (en) * 2014-01-06 2016-10-21 台灣積體電路製造股份有限公司 Semiconductor apparatus having protrusion bump pads and method for forming the same
US10163774B2 (en) 2014-01-06 2018-12-25 Taiwan Semiconductor Manufacturing Company Protrusion bump pads for bond-on-trace processing

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9418928B2 (en) 2014-01-06 2016-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Protrusion bump pads for bond-on-trace processing
TWI555154B (en) * 2014-01-06 2016-10-21 台灣積體電路製造股份有限公司 Semiconductor apparatus having protrusion bump pads and method for forming the same
US9508637B2 (en) 2014-01-06 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Protrusion bump pads for bond-on-trace processing
US10014270B2 (en) 2014-01-06 2018-07-03 Taiwan Semiconductor Manufacturing Company Protrusion bump pads for bond-on-trace processing
US10020276B2 (en) 2014-01-06 2018-07-10 Taiwan Semiconductor Manufacturing Company Protrusion bump pads for bond-on-trace processing
US10163774B2 (en) 2014-01-06 2018-12-25 Taiwan Semiconductor Manufacturing Company Protrusion bump pads for bond-on-trace processing
US10522495B2 (en) 2014-01-06 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Protrusion bump pads for bond-on-trace processing
US10700034B2 (en) 2014-01-06 2020-06-30 Taiwan Semiconductor Manufacturing Company, Ltd. Protrusion bump pads for bond-on-trace processing
US10804192B2 (en) 2014-01-06 2020-10-13 Taiwan Semiconductor Manufacturing Company Protrusion bump pads for bond-on-trace processing

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