TWM453837U - Online detection device of film thickness - Google Patents
Online detection device of film thickness Download PDFInfo
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- TWM453837U TWM453837U TW101223586U TW101223586U TWM453837U TW M453837 U TWM453837 U TW M453837U TW 101223586 U TW101223586 U TW 101223586U TW 101223586 U TW101223586 U TW 101223586U TW M453837 U TWM453837 U TW M453837U
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Description
本創作係有關於一種薄膜厚度線上檢測裝置,尤其是指一種在薄膜輸送通過的路徑處,利用光衰退程度來計算薄膜之厚度,以達隨時監測薄膜厚度之創新裝置。The present invention relates to a film thickness line detecting device, and more particularly to an innovative device for calculating the thickness of a film by using the degree of light decay at a path through which the film is transported, so as to monitor the thickness of the film at any time.
按,片電阻是導電薄膜重要特性之一,尤其該片電阻會受到薄膜厚度、晶粒尺寸與雜質濃度等因素的影響,因此,對於薄膜製造商而言,薄膜的厚度均勻性是在製鍍高品質光學薄膜時最重要的指標之一,故,想要有效地控制材料厚度,以確保光學薄膜的品質,經常性的檢測並監控薄膜的厚度是不可少的動作。According to the sheet resistance, sheet resistance is one of the important characteristics of the conductive film. In particular, the sheet resistance is affected by factors such as film thickness, grain size and impurity concentration. Therefore, for film manufacturers, the thickness uniformity of the film is in plating. One of the most important indicators for high-quality optical films, therefore, in order to effectively control the thickness of the material to ensure the quality of the optical film, it is indispensable to constantly detect and monitor the thickness of the film.
而薄膜厚度測量方法很多,依測量的方式大致分可以分為直接測量和間接測量兩類。其中,直接測量指應用測量儀器,透過接觸直接感應出薄膜的厚度;常見的直接法測量方法有:螺旋測微法、精密輪廓掃描法(臺階法)、掃描電子顯微法(SEM)。間接測量是指根據一定對應的物理關係,將相關的物理量經過計算轉化為薄膜的厚度,從而達到測量薄膜厚度的目的;常見的間接法測量方法有:稱量法、電容法、電阻法、等厚干涉法、變角干涉法、橢圓偏振法。There are many methods for measuring the thickness of a film. According to the measurement method, it can be divided into two types: direct measurement and indirect measurement. Among them, direct measurement refers to the application of measuring instruments, which directly induces the thickness of the film through contact; common direct methods of measurement include: spiral micrometry, precision contour scanning (step method), and scanning electron microscopy (SEM). Indirect measurement refers to the conversion of the relevant physical quantity into the thickness of the film according to a certain physical relationship, so as to achieve the purpose of measuring the thickness of the film; common indirect methods are: weighing method, capacitance method, electric resistance method, etc. Thick interferometry, variable angle interferometry, ellipsometry.
在先前的文獻中,曾提出一光學薄膜表面量測系統,此系統以Twyman-Green干涉儀為其架構並結合軟體程式,利用小波轉換將擷取之影像分高、低頻呈現,同時搭配灰階共生矩陣(GLCM)與熵值(entropy)運算,以快速測定薄膜表面之平坦度,再利用軟體分析處理干涉圖,量測出薄膜厚度。In the previous literature, an optical film surface measurement system was proposed. The system is based on the Twyman-Green interferometer and combined with a software program. The wavelet transform is used to divide the captured image into high and low frequencies, and at the same time, with gray scale. The co-occurrence matrix (GLCM) and entropy calculations are used to quickly determine the flatness of the film surface, and the interferogram is processed by software analysis to measure the film thickness.
由於,上述之厚度的量測必須運用干涉儀及精密判讀干涉條紋的位移量來達成,否則將造成量測上的誤差,因此,為了提升干涉式膜厚量測之精確度,必須再進一步利用濾波器濾除雜訊,並且經由干涉圖形之細線化,方能使程式精確地自動判別條紋之間距與條紋位移量,達成量測薄膜厚度之目的。Since the measurement of the above thickness must be achieved by using an interferometer and accurately determining the displacement amount of the interference fringe, otherwise the measurement error will be caused. Therefore, in order to improve the accuracy of the interferometric film thickness measurement, it is necessary to further utilize The chopper removes the noise and is thinned by the interference pattern, so that the program can accurately and automatically determine the distance between the stripes and the amount of streak displacement, and achieve the purpose of measuring the thickness of the film.
本創作之主要目的,係提供一種薄膜厚度線上檢測裝置,其主要是在輸送薄膜的路徑中,利用光衰退的不同程度來計算薄膜之厚度,以達到即時性監控薄膜厚度之效果,進而確保薄膜品質。The main purpose of the present invention is to provide a film thickness line detecting device, which mainly uses the different degrees of light decay to calculate the thickness of the film in the path of transporting the film, so as to achieve the effect of monitoring the thickness of the film in an instant manner, thereby ensuring the film. quality.
上述本創作之主要目的與功效,是由以下之具體技術手段所達成:The main purpose and effect of the above creations are achieved by the following specific technical means:
一種薄膜厚度線上檢測裝置,係包括光源、光學感測元件及計算膜厚單元;其中,係在輸送薄膜的路徑上,設置有彼此對應的光源與光學感測元件,並令光學感測元件電性連接該計算膜厚單元;於是當光源產生之光穿透過透明導電薄膜,便會因不同厚度之透明導電薄膜而產生不同程度的衰減,並於光學感測元件吸收後,將所吸收之光轉換為相對應之電壓訊號,該電壓訊號在經由計算膜厚單元計算後,便能得到薄膜之厚度值。A thin film thickness line detecting device comprises a light source, an optical sensing component and a calculated film thickness unit; wherein, in the path of transporting the film, a light source and an optical sensing component corresponding to each other are disposed, and the optical sensing component is electrically The connection is performed to calculate the film thickness unit; then, when the light generated by the light source penetrates the transparent conductive film, the transparent conductive film of different thickness is generated to have different degrees of attenuation, and after absorption by the optical sensing element, the absorbed light is absorbed. The voltage signal is converted into a corresponding voltage signal, and the voltage signal is obtained by calculating the film thickness unit to obtain the thickness value of the film.
如上所述之薄膜厚度線上檢測裝置,其中,該光源為一全波段光源,包含紫外線、可見光及近紅外線其中之一的光源。The thin film thickness line detecting device as described above, wherein the light source is a full-band light source, and includes a light source of one of ultraviolet light, visible light and near infrared light.
如上所述之薄膜厚度線上檢測裝置,其中,在每一次附設一層薄膜後的輸送路徑中,於該路徑的對應處均設有相對應的光源及光感測元件,以檢測每一層薄膜之厚度。The film thickness line detecting device as described above, wherein in each of the conveying paths after attaching a film, corresponding light sources and light sensing elements are disposed at corresponding portions of the path to detect the thickness of each film. .
如上所述之薄膜厚度線上檢測裝置,其中,在每一次附設一層薄膜後之輸送路徑中所設置的各光感測元件,共同電性連接至該計算膜厚單元,以各自計算每一階段的薄膜厚度。The thin film thickness line detecting device as described above, wherein each of the light sensing elements disposed in the transport path after attaching a thin film is electrically connected to the calculated film thickness unit to calculate each stage of each stage. membrane thickness.
如上所述之薄膜厚度線上檢測裝置,其中,在每一次附設一層薄膜後之輸送路徑中所設置的各光感測元件,各自電性連接至一計算膜厚單元,以各自計算各個階段的薄膜厚度。The thin film thickness line detecting device as described above, wherein each of the light sensing elements disposed in the transport path after attaching a thin film is electrically connected to a calculated film thickness unit to calculate each stage of the film. thickness.
如上所述之薄膜厚度線上檢測裝置,其中,進一步包括一顯示單元,該顯示單元與計算膜厚單元電性連接,能將計算膜厚單元計算得到之膜厚數值顯示於顯示單元。The film thickness line detecting device as described above further includes a display unit electrically connected to the calculated film thickness unit, and the film thickness value calculated by calculating the film thickness unit can be displayed on the display unit.
為令本創作之技術手段、創作目的及達成功效有更完整及清楚的揭露,茲於下詳細說明之,並請一併參閱揭示之圖式及元件符號。In order to make the technical means, creative purpose and achievement of this creation more complete and clear, it is explained in detail below, and please refer to the disclosed drawings and component symbols.
請參看第一圖所示,其係本創作之薄膜厚度線上檢測裝置的架構示意圖。Please refer to the first figure, which is a schematic diagram of the structure of the thin film thickness line detecting device.
本創作之薄膜厚度線上檢測裝置,係包括光源(1)、光學感測元件(2)及計算膜厚單元(3);其中:The film thickness line detecting device of the present invention comprises a light source (1), an optical sensing component (2) and a calculated film thickness unit (3); wherein:
請參看第二圖,係揭示薄膜(4)是以在線上的方式被製作與輸送,即在一輸送的路徑(TP )中,會在一透光之基材(5)上成型至少一層的薄膜(4),在該輸送薄膜的路徑(TP )上,設置有彼此對應的光源(1)與光學感測元件(2),且令該光學感測元件(2)電性連接該計算膜厚單元(3)。Referring to the second figure, it is revealed that the film (4) is produced and conveyed in an on-line manner, that is, in a transport path (T P ), at least one layer is formed on a light-transmissive substrate (5). a film (4), on the path (T P ) of the transport film, a light source (1) corresponding to each other and an optical sensing element (2) are disposed, and the optical sensing element (2) is electrically connected to the film Calculate the film thickness unit (3).
如此一來,當光源(1)產生之光穿透過薄膜(4)時,便會因為薄膜(4)本身厚度的不同,造成光在穿透過透明導電薄膜(4)時產生不同程度的衰減,即厚度越薄,光衰減程度越小,而薄膜(4)厚度越厚,光衰減的程度越大,這時該光學感測元件(2)在吸收穿透薄膜(4)之光後,便會依據所吸收之光的強度轉換為相對應之電壓訊號,並將該電壓訊號輸送至計算膜厚單元(3),由計算膜厚單元(3)根據該些電壓訊號計算得到薄膜(4)之厚度值。In this way, when the light generated by the light source (1) penetrates through the film (4), the light may have different degrees of attenuation when penetrating the transparent conductive film (4) due to the thickness of the film (4) itself. That is, the thinner the thickness, the smaller the degree of light attenuation, and the thicker the thickness of the film (4), the greater the degree of light attenuation. At this time, the optical sensing element (2) absorbs the light passing through the film (4). Converting the intensity of the absorbed light into a corresponding voltage signal, and transmitting the voltage signal to the calculated film thickness unit (3), and calculating the film thickness unit (3) according to the voltage signals to calculate the film (4) Thickness value.
請再進一步參看第二圖,每一光學感測元件(2)共同電性連接至該計算膜厚單元(3),以統一由該計算膜厚單元(3)計算出每一階段的薄膜厚度。或是如第三圖所示,每一光學感測元件(2)各自電性連接一計算膜厚單元(3),利用各個計算膜厚單元(3)分別計算出每一階段的薄膜厚度。Referring to the second figure, each optical sensing element (2) is electrically connected to the calculated film thickness unit (3) to uniformly calculate the film thickness of each stage from the calculated film thickness unit (3). . Or as shown in the third figure, each of the optical sensing elements (2) is electrically connected to a calculated film thickness unit (3), and the film thickness of each stage is calculated by each of the calculated film thickness units (3).
請再參看第四、五圖,係本創作之薄膜厚度線上檢測裝置進一步至少包括顯示單元(6)。其中,第四圖係揭示在第二圖所示之實施例中,進一步將一顯示單元(6)與該計算膜厚單元(3)電性連接,能將該計算膜厚單元(3)計算得到之膜厚數值顯示。第五圖係揭示在第三圖所示之實施例中,進一步設有複數個顯示單元(6),並將各顯示單元(6)與各計算膜厚單元(3)電性連接,各個計算膜厚單元(3)所計算得到之膜厚數值各自顯示在與之電性連接之顯示單元(6),當然在此實施例中,也是可以將各個計算膜厚單元(3)共同電性連接一顯示單元(6),將各個計算膜厚單元(3)所計算得到之膜厚數值由單一個顯示單元(6)顯示。Referring to the fourth and fifth figures, the thin film thickness line detecting device of the present invention further includes at least a display unit (6). The fourth figure discloses that in the embodiment shown in the second figure, a display unit (6) is further electrically connected to the calculated film thickness unit (3), and the calculated film thickness unit (3) can be calculated. The obtained film thickness value is shown. The fifth figure discloses that in the embodiment shown in the third figure, a plurality of display units (6) are further provided, and each display unit (6) is electrically connected to each of the calculated film thickness units (3), and each calculation is performed. The film thickness values calculated by the film thickness unit (3) are each displayed on the display unit (6) electrically connected thereto, and in this embodiment, the respective calculated film thickness units (3) can also be electrically connected together. A display unit (6) displays the film thickness values calculated by the respective calculated film thickness units (3) from a single display unit (6).
其中,上述之光源(1)為一包含紫外線、可見光及近紅外線其中之一的全波段光源。Wherein, the light source (1) is a full-band light source including one of ultraviolet light, visible light and near infrared light.
以上所舉者僅係本創作之部份實施例,並非用以限制本創作,致依本創作之創意精神及特徵,稍加變化修飾而成者,亦應包括在本專利範圍之內。The above are only some of the examples of this creation, and are not intended to limit the creation of this creation. It should be included in the scope of this patent, based on the creative spirit and characteristics of this creation.
綜上所述,本創作實施例確能達到所預期之使用功效,又其所揭露之具體構造,不僅未曾見諸於同類產品中,亦未曾公開於申請前,誠已完全符合專利法之規定與要求,爰依法提出新型專利之申請,懇請惠予審查,並賜准專利,則實感德便。In summary, the present embodiment can achieve the expected use efficiency, and the specific structure disclosed therein has not been seen in similar products, nor has it been disclosed before the application, and has fully complied with the provisions of the Patent Law. And the request, the application for a new type of patent in accordance with the law, please forgive the review, and grant the patent, it is really sensible.
(1)‧‧‧光源(1) ‧‧‧Light source
(2)‧‧‧光學感測元件(2) ‧‧‧ Optical sensing components
(3)‧‧‧計算膜厚單元(3) ‧‧‧Computed film thickness unit
(4)‧‧‧薄膜(4) ‧‧‧film
(5)‧‧‧基材(5) ‧‧‧Substrate
(TP )‧‧‧ 路徑(T P )‧‧‧ Path
(6)‧‧‧顯示單元(6)‧‧‧Display unit
第一圖:本創作之薄膜厚度線上檢測裝置的其一架構示意圖The first picture: a schematic diagram of the structure of the thin film thickness line detecting device of the present invention
第二圖:本創作之薄膜厚度線上檢測裝置其二較佳實施例的架構示意圖Second: Schematic diagram of the structure of the second preferred embodiment of the thin film thickness line detecting device of the present invention
第三圖:本創作之薄膜厚度線上檢測裝置其三較佳實施例的架構示意圖Third: Schematic diagram of the structure of the three preferred embodiments of the thin film thickness line detecting device of the present invention
第四圖:本創作之薄膜厚度線上檢測裝置其四較佳實施例的架構示意圖Fourth: Schematic diagram of the structure of the four preferred embodiments of the thin film thickness line detecting device of the present invention
第五圖:本創作之薄膜厚度線上檢測裝置其五較佳實施例的架構示意圖Fig. 5 is a schematic view showing the structure of the fifth preferred embodiment of the thin film thickness line detecting device of the present invention
(1)‧‧‧光源 (1) ‧‧‧Light source
(2)‧‧‧光學感測元件 (2) ‧‧‧ Optical sensing components
(3)‧‧‧計算膜厚單元 (3) ‧‧‧Computed film thickness unit
(4)‧‧‧薄膜 (4) ‧‧‧film
(5)‧‧‧基材 (5) ‧‧‧Substrate
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI618914B (en) * | 2016-01-07 | 2018-03-21 | 南臺科技大學 | Electro-conductive film thickness detection apparatus |
US9952034B2 (en) | 2016-06-28 | 2018-04-24 | National Tsing Hua University | Optical interferometric system for measurement of a full-field thickness of a plate-like object in real time |
TWI626426B (en) * | 2017-01-23 | 2018-06-11 | 台灣積體電路製造股份有限公司 | Method of measuring thickness of epitaxial layer |
CN112229336A (en) * | 2020-10-12 | 2021-01-15 | 宁波盈瑞聚合科技有限公司 | High resistant separates infrared thickness measurement system of packaging film production line |
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2012
- 2012-12-05 TW TW101223586U patent/TWM453837U/en not_active IP Right Cessation
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI618914B (en) * | 2016-01-07 | 2018-03-21 | 南臺科技大學 | Electro-conductive film thickness detection apparatus |
US9952034B2 (en) | 2016-06-28 | 2018-04-24 | National Tsing Hua University | Optical interferometric system for measurement of a full-field thickness of a plate-like object in real time |
TWI626426B (en) * | 2017-01-23 | 2018-06-11 | 台灣積體電路製造股份有限公司 | Method of measuring thickness of epitaxial layer |
CN112229336A (en) * | 2020-10-12 | 2021-01-15 | 宁波盈瑞聚合科技有限公司 | High resistant separates infrared thickness measurement system of packaging film production line |
CN112229336B (en) * | 2020-10-12 | 2022-04-19 | 宁波盈瑞聚合科技有限公司 | High resistant separates infrared thickness measurement system of packaging film production line |
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